KR100759964B1 - liquid crystal display and manufacturing method thereof - Google Patents

Abstract

A gate line including a low reflection film, a gate electrode including a gate electrode, and a gate pad are formed on one substrate of a liquid crystal display device, and a gate insulating film, a semiconductor layer, and an ohmic contact layer are sequentially formed thereon. A data line including a data line including a low reflection film, a source electrode, a drain electrode, and a data pad is formed thereon, and a passivation layer is formed thereon, and a pixel electrode, an auxiliary gate pad, and an auxiliary data of ITO or IZO are formed on the passivation layer. The pad is formed. A cathode is formed on the other substrate facing the substrate, and an insulating film including a plurality of openings smaller in size than the pixel electrode is formed thereon. The openings are filled with red, green, and blue light emitting bodies formed using a PPV precursor, and a conductive polymer film is formed thereon. A polarizing film is formed on the conductive polymer film, and an anode made of ITO or IZO is formed on the polarizing film. In such a liquid crystal display device, red, green, and blue colors can be displayed by a light emitter even without a backlight, thereby reducing the thickness and weight of the liquid crystal display and reducing manufacturing costs. In addition, since the photolithography process is performed only once when forming the insulating film when manufacturing the color filter substrate, the process can be simplified and the manufacturing cost can be reduced.

Low Reflective Film, PPV Precursor, Light Emitter, Back Light

Description

Liquid crystal display and manufacturing method thereof

1 is a cross-sectional view schematically showing a color filter substrate for a liquid crystal display device according to the prior art,

2 is a schematic cross-sectional view of a liquid crystal display according to an exemplary embodiment of the present invention;

3 is a layout view illustrating a thin film transistor substrate for a liquid crystal display according to an exemplary embodiment of the present invention.

4 is a cross-sectional view taken along the line IV-IV of FIG. 3,

FIG. 5A is a layout view illustrating a thin film transistor substrate for a liquid crystal display device in a first step of manufacturing according to an embodiment of the present invention; FIG.

5B is a cross-sectional view taken along the line Vb-Vb of FIG. 5A;

FIG. 6a is a layout view in the next step of FIG. 5a;

FIG. 6B is a cross-sectional view taken along the VIb-VIb line in FIG. 6A;

FIG. 7a is a layout view in the next step of FIG.

FIG. 7B is a cross-sectional view taken along the line VIIb-VIIb of FIG. 7A;

FIG. 8a is a layout view in the next step of FIG.                 

FIG. 8B is a cross-sectional view taken along the line VIIb-VIIb of FIG. 8A;

9 is a cross-sectional view showing a color filter substrate for a liquid crystal display device in the first step of manufacturing according to an embodiment of the present invention;

10 to 12 are cross-sectional views sequentially showing processes in the next step of FIG. 9.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display and a method for manufacturing the same, and more particularly, to a liquid crystal display and a method for manufacturing the same, which do not require a back light.

The liquid crystal display is one of the most widely used flat panel display devices. The liquid crystal layer between the two substrates and the two substrates on which the plurality of electrodes are formed to generate an electric field is attached to the outer surface of each substrate to polarize light. It consists of two polarizing plates, and is a display device for controlling the amount of light transmitted by rearranging the liquid crystal molecules of the liquid crystal layer by applying a voltage to the electrode.

A thin film transistor is formed on one substrate of the liquid crystal display, which serves to switch a voltage applied to the electrode. On the substrate on which the thin film transistor is formed, a plurality of wirings, that is, a plurality of gate lines and data lines, are formed in row and column directions, respectively. A pixel electrode is formed in the pixel region defined by the intersection of the gate line and the data line, and the thin film transistor controls the image signal transmitted through the data line according to the scan signal transmitted through the gate line and sends it out to the pixel electrode.

On another substrate of the liquid crystal display, red, green, and blue color filters and a common electrode are formed.

Then, the color filter substrate of a liquid crystal display device is demonstrated with reference to FIG.

First, a black matrix pattern 2 made of a chromium film and having an opening is formed on the transparent insulating substrate 1. In this case, a chromium oxide film having a low reflectance may be patterned under the chromium film.

Color filters (R, G, B) made of red, green, and blue photosensitive resins are formed in the openings. At this time, the red, green, and blue color filters are formed by a photo process using a mask after the red, green, and blue photosensitive resins are applied in the same manner as spin coating. In order to form all three colors, Photo process is needed.

The common electrode 3 made of a transparent conductive material such as ITO is formed on the color filters R, G, and B and the black matrix pattern 2.

In the liquid crystal display having the color filter substrate having such a structure, some of the white light generated from the backlight is absorbed, and only some necessary colors are transmitted to display the color. In this case, the backlight includes a narrow lamp, a reflecting plate, a light guide plate, and several optical compensation plates serving to diffuse or collect light. This is a large cost in the liquid crystal display device, and causes a thickness and weight increase to more than 3mm. In addition, since the red, green, and blue color filter arrays transmit only a part of the white light, even if the aperture ratio of the pixel region is assumed to be 100%, the light efficiency is lower than 30%.

In addition, 95% of the photosensitive resin is lost when the photosensitive resin is applied by spin coating, and the photosensitive resin is more expensive than other inorganic films or other photosensitive films, and the number of steps is required when the color filter is formed. This increases the manufacturing cost of the color filter substrate.

The technical problem to be achieved by the present invention is to simplify the process.

Another technical problem to be achieved by the present invention is to reduce the production cost.

In order to achieve this problem, the present invention forms a cathode, a red, green, and blue emitter and an anode when the color filter substrate is manufactured.

According to the present invention, a plurality of pixel electrodes and thin film transistors are formed on a first substrate, and a cathode is formed on a second substrate facing the first substrate. An insulating film having a plurality of openings is formed on the cathode, and the openings are filled with red, green, and blue light emitting bodies. An anode is formed on the insulating film.

Here, the light emitter is preferably smaller than the size of the pixel electrode.

At this time, the cathode is composed of the lower aluminum film and the upper calcium film, the insulating film is preferably made of a photosensitive resin containing polyimide (polyimide), the surface of the insulating film is a water-repellent or oil-repellent surface.

On the other hand, the red, green, blue light emitter is formed of any one of a polymer organic material, a low molecular organic material and an inorganic material as a precursor, in the case of a polymer organic material may be a PPV having a weight concentration of 0.3%.

In addition, the conductive polymer film is formed on the light emitter, the conductive polymer film is made of a PEDOT material doped with PSS, a polarizing film is formed on the conductive polymer film, and the anode is preferably made of either ITO or IZO.

In this case, a plurality of cathode signal transmission pads are further formed at the edge of the second substrate with the same layer as the cathode, and a plurality of anode signals not overlapping with the cathode signal transmission pad at the edge of the second substrate with the same layer as the anode. A transfer pad is further formed.

Here, the first substrate includes a plurality of gate lines and a plurality of data lines that are insulated from and cross the gate lines, and the thin film transistor is a gate electrode that is a part of the gate line, a semiconductor layer formed on the gate electrode, and a semiconductor layer formed on the data line. It may include a part of the source electrode and the drain electrode.

In this case, the semiconductor layer is made of either amorphous silicon or n-type polycrystalline silicon, and the gate electrode, the source electrode, and the drain electrode preferably include a low reflection film such as a chromium oxide film having low reflectance.

In addition, the pixel electrode may be made of either ITO or IZO.

The method of manufacturing such a liquid crystal display device is as follows. First, a plurality of thin film transistors and a plurality of pixel electrodes connected thereto are formed on a first insulating substrate. On the other hand, a cathode is formed on the second insulating substrate facing the first substrate, and an insulating film having a plurality of openings is formed thereon. Next, red, green, and blue light-emitting bodies are formed in the openings, and then an anode is formed.

In this case, the insulating film may be plasma treated using oxygen and CF ₄ gas, respectively.

Here, the cathode may be formed of a lower aluminum film and an upper calcium film, and the insulating film may be formed of a photosensitive resin including polyimide.

The red, green, and blue light emitters are formed of any one of a polymer organic material, a low molecular organic material, and an inorganic material as a precursor, and when formed of a polymer organic material, it is preferable to use a PPV having a weight concentration of 0.3%.

On the other hand, a conductive polymer film is further formed on the light emitter, wherein the conductive polymer film is a PEDOT material doped with PSS, a polarizing film is formed on the conductive polymer film, and the anode may be formed of either ITO or IZO.

In this case, in the forming of the cathode, a plurality of cathode signal transmission pads are further formed at the edge of the first substrate using the same layer as the cathode, and in the forming of the anode, the cathode is formed at the edge of the second substrate using the same layer as the anode. It is desirable to further form a plurality of bipolar signaling pads that do not overlap with the signaling pad.

Meanwhile, the first substrate includes a plurality of gate lines and a plurality of data lines that are insulated from and cross the gate lines, and the thin film transistor is a gate electrode that is a part of the gate line, a semiconductor layer formed on the gate electrode, and a semiconductor layer formed on the data line. A part of the source electrode and the drain electrode, wherein the semiconductor layer is made of either amorphous silicon or n-type polycrystalline silicon, and the gate electrode, the source electrode, and the drain electrode preferably include a low reflection film such as a chromium oxide film having low reflectance. Do.

The pixel electrode may be made of either ITO or IZO.

In the present invention, the red, green, and blue colors can be displayed by the light emitter even without the backlight, so that the thickness and weight of the liquid crystal display can be reduced, and the manufacturing cost can be reduced. In addition, since the photolithography process is performed only once when forming the insulating film when manufacturing the color filter substrate, the process can be simplified and the manufacturing cost can be reduced.

Next, a liquid crystal display according to an exemplary embodiment of the present invention and a manufacturing method thereof will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

First, the structure of a liquid crystal display according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 2.

2 is a cross-sectional view illustrating a liquid crystal display device according to an exemplary embodiment of the present invention.

As shown in FIG. 2, the pixel electrode 80 and the thin film transistor 90 connected thereto are formed on the lower substrate 10 of the liquid crystal display, which is called a thin film transistor substrate. The detailed structure of the thin film transistor substrate will be described later.

The upper substrate 100 corresponding to the thin film transistor substrate is referred to as a color filter substrate. First, a cathode 200 including an aluminum film 210 and a calcium film 220 is formed on the upper substrate 100. On the cathode 200, an insulating film 300 made of polyimide and having an opening is formed. Red, green, and blue light emitters 410, 420, and 430 are formed in the opening, and a conductive polymer film 500 is formed on the light emitters 410, 420, and 430. A polarizer 600 is coated on the insulating film 300 and the conductive polymer film 500, and an anode 700 made of a transparent conductive material such as ITO or IZO is formed on the polarizer film 600.

When the two substrates 10 and 100 of the liquid crystal display are aligned, the size of the light emitters 410, 420, and 430 is smaller than that of the pixel electrode 80.

The liquid crystal 800 is injected between the two substrates 10 and 100.

Next, the structure of the thin film transistor substrate for a liquid crystal display device will be described in detail with reference to FIGS. 3 and 4.

3 is a layout view illustrating a thin film transistor substrate for a liquid crystal display according to the present invention, and FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 3.

A gate wiring including a lower chromium oxide film 28 on the insulating substrate 10 and a conductive film 29 such as chromium, aluminum, aluminum alloy, molybdenum (Mo), molybdenum-tungsten (MoW), and tantalum (Ta). (21, 22, 23, 24) are formed. The gate wiring is connected to the gate line 21 extending in the horizontal direction, the gate electrode 22 that is part of the gate line 21, and the end of the gate line 21, and receives a scan signal from the outside to the gate line 21. And a storage capacitor wiring 24 formed in parallel with the gate pad 23 and the gate line 21. The storage capacitor wiring 24 overlaps the pixel electrode 80 formed later to form the storage capacitor with the gate insulating film 30 interposed therebetween.

Here, the gate wirings 21, 22, 23, and 24 have a low reflection film 28 having a low reflectance, such as a chromium oxide film, and a main wiring layer 29 formed of a single layer, a double layer, or a triple layer on the low reflection film 28. ). When the main wiring layer 29 is formed in two or more layers, it is preferable that one layer is formed of a material having low resistance and the other layer is formed of a material having good contact properties with other materials.

The gate wirings 21, 22, 23, and 24 are covered with a gate insulating film 30 made of silicon nitride (SiN _X ).

A semiconductor layer 41 made of a semiconductor such as amorphous silicon is formed on the gate insulating film 30, and a resistivity made of a semiconductor such as amorphous silicon doped with n-type impurities such as phosphorus (P) is formed on the semiconductor layer 41. The contact layers 52 and 53 are formed separated from both sides with respect to the gate electrode 22. Here, the semiconductor layer 41 may be formed of n-type polycrystalline silicon instead of amorphous silicon.

On the ohmic contacts 52 and 53, the data wirings 61 and 62 are formed of a lower chromium oxide film 68 and an upper chromium, molybdenum or molybdenum-tungsten alloy, an aluminum or aluminum alloy, and a conductive film 69 such as tantalum. 63, 64) are formed. The data line includes a data line 61 extending in the vertical direction, a source electrode 62 which is a part of the data line 61, a drain electrode 63 facing the source electrode 62 around the gate electrode 22, and data. And a data pad 64 connected to the line 61 to receive an image signal from the outside and transmit the image signal to the data line 61.

At this time, the data wirings 61, 62, 63, and 64 have a low reflection film 68 such as a chromium oxide film at the bottom, similar to the gate wirings 21, 22, 23, and 24, and a single layer or a layer on the low reflection film 68. The main wiring layer 69 which consists of a double layer and a triple layer is included. When the main wiring layer 69 is formed of two or more layers, it is preferable that one layer is formed of a material having low resistance and the other layer is formed of a material having good contact properties with other materials.

Here, the gate electrode 22, the semiconductor layer 41, the source electrode 62, and the drain electrode 63 form the thin film transistor 90.

A protective film 70 made of silicon nitride or an organic insulating film is formed on the data wirings 61, 62, 63, and 64 and the gate insulating film 30. The passivation layer 70 has not only a contact hole 73 exposing the gate pad 23 with the gate insulating film 30, but also a contact hole 74 and a drain electrode 63 exposing the data pad 64. It has a contact hole 72.

The pixel electrode 80, the auxiliary gate pad 83, and the auxiliary data pad 84 made of a transparent conductive material such as ITO or IZO are formed on the passivation layer 70.

The pixel electrode 80 is connected to the drain electrode 63 through the contact hole 72 to receive an image signal. The auxiliary gate pad 83 and the auxiliary data pad 84 are connected to the gate pad 23 and the data pad 64 through the contact holes 73 and 74, respectively, which are connected to the pads 23 and 64 and externally. It serves to complement the adhesion with the circuit device and to protect the pads 23 and 64.

Next, a method of manufacturing two substrates of the liquid crystal display will be described.

A method of manufacturing a thin film transistor substrate will be described with reference to FIGS. 5A to 8B and FIGS. 3 and 4.

First, as shown in FIGS. 5A and 5B, a conductive film such as chromium oxide film 28 and chromium, aluminum, aluminum alloy, molybdenum (Mo), molybdenum-tungsten (MoW), and tantalum (Ta) may be formed on the insulating substrate 10. 29 is sequentially deposited by a method such as sputtering, and the two layers 28 and 29 are patterned by a photolithography process using a mask to form the gate line 21, the gate electrode 22, the gate pad 23, and the storage capacitor wiring ( A gate wiring including 24 is formed.

Next, as shown in FIGS. 6A and 6B, the gate insulating layer 30, the amorphous silicon layer, and the amorphous silicon layer doped with n-type impurities are sequentially deposited by using a chemical vapor deposition method, and the upper two layers are patterned to form a semiconductor layer. 41 and the ohmic contact layer 51 are formed.

Next, as shown in FIGS. 7A and 7B, a chromium oxide film 68 and a conductive film 69 such as chromium, aluminum, aluminum alloy, molybdenum, molybdenum-tungsten, and tantalum are sequentially deposited by a sputtering method and photographed using a mask. Patterning is performed by an etching process to form a data line including a data line 61, a source electrode 62, a drain electrode 63, and a data pad 64. Next, the ohmic contact layer 51 not covered by the data wires 61, 62, 63, and 64 is removed and separated into two parts 52 and 53.

Next, as shown in FIGS. 8A and 8B, silicon nitride is deposited by chemical vapor deposition or spin coating an organic insulating material to form a protective film 70, and patterned by a photolithography process using a mask to form contact holes 72, 73, and 74. ).

Next, as shown in FIGS. 3 and 4, a transparent conductive material such as ITO or IZO is deposited by a method such as sputtering and patterned by a photolithography process using a mask to form the pixel electrode 80, the auxiliary gate pad 83, and the auxiliary data. The pad 84 is formed.

Next, a method of manufacturing the color filter substrate will be described in detail with reference to FIGS. 9 to 12.

First, as shown in FIG. 9, the cathode 200 is formed by sequentially depositing an aluminum film 210 and a calcium film 220 having good reflectivity on the insulating substrate 100. Although not shown here, a cathode signal transmission pad is formed on the edge of the substrate 100 by using a shadow mask without depositing the aluminum film 210 and the calcium film 220 on the entire substrate 100. The negative signal transmitting pad receives a signal from the outside and transmits the signal to the negative electrode 200. In this case, the cathode signal transmitting pad may be formed in plural, and the size is preferably at least 0.5 mm in length and width.

Next, a photosensitive resin made of polyimide is coated and an insulating film 300 having an opening 310 is formed by a photo process using a mask. At this time, the height of the insulating film 300 is 1 μm to 2 μm. Subsequently, the substrate 100 is subjected to oxygen plasma treatment and then plasma treated using CF ₄ gas. By the plasma treatment, the polyimide of the insulating film 300 becomes a water-repellent or oil-repellent surface on which affinity for an aqueous or oily substance is reduced. Meanwhile, the size of the opening 310 is preferably smaller than that of the pixel electrode 80 of the lower plate 10.

Next, as shown in FIG. 10, using a polymer PPV (poly phenylene vinylene) precursor capable of forming a solvent in water, the ink-jet method of doping a light emitting material for each opening 310 is performed. Green and blue light emitters 410, 420, and 430 are formed in the opening 310, respectively. At this time, since the surface of the insulating film 300 is in the water-repellent and oil-repellent state, the light emitters 410, 420, 430 easily flow into the opening 310 without remaining on the insulating film 300. On the other hand, the weight concentration of the PPV precursor is preferably 0.3% in consideration of the stability of the discharge amount and the ease of film formation.

Here, although a high molecular organic material such as PPV is used as the material of the light emitters 410, 420, and 430, a low molecular organic material or an inorganic material may be used.

Next, as illustrated in FIG. 11, a conductive polymer film 500 made of a polythiophene derivative (PEDOT) material doped with polystryrene sulfonic acid (PSS) is coated. In this case, the conductive polymer film 500 is also formed only on the light emitters 410, 420, and 430 because the surface of the insulating film 300 is in the water-repellent and oil-repelling state similarly to the light emitters 410, 420 and 430.

Next, as illustrated in FIG. 12, the polarizing film 600 is coated on the entire surface, and a transparent conductive material such as ITO or IZO is deposited thereon to form the anode 700. In this case, the anode 700 may operate as a common electrode as in the case of the conventional color filter substrate.

Although not shown here, an anode signal transmission pad is formed at the edge of the substrate 100 using a shadow mask without depositing a transparent conductive material on the entire substrate. The anode signal transmission pad receives a signal from the outside and delivers the signal to the anode 700. In this case, the anode signal transmission pad may be formed in plural so as not to overlap with the cathode signal transmission pad, and the size of the cathode signal transmission pad is preferably 0.5 mm or more in length and width.

After the thin film transistor substrate and the color filter substrate are completed as described above, the following steps are carried out. First, an alignment film is formed on two substrates and subjected to rubbing, and then a sealant is printed around the substrate. Next, in order to receive a signal from a driving circuit unit attached to the thin film transistor substrate, the thin film transistor substrate and the color filter substrate must be connected. For this purpose, a short doting (short Ag) is formed on the cathode and anode signal transmission pads. dotting). In order to prevent the negative and positive signal applied when performing the short dotting process, the negative and positive signal transmission pads are not connected. Next, spacers are applied to maintain the cell gap, and then the two substrates are aligned and bonded to cure the encapsulant and silver paste. When the two substrates are bonded to each other, an error of several μm is generated, so that the size 400 of the red, green, and blue light emitters 410, 420, and 430 is smaller than the pixel electrode 80 as shown in FIG. 3. It is preferable to form. Next, after cutting the edges of the bonded substrate, the liquid crystal is injected and the injection hole is sealed with an encapsulant. Next, a polarizing plate is attached to the outside of the thin film transistor substrate and a driving circuit board is attached.                     

When the liquid crystal display is completed as described above, a signal transmitted from the outside to the anode 700 through the anode signal transmission pad of the color filter substrate is applied in a size of 4V to 5V. The signal transmitted to the cathode 200 through the cathode signal transmission pad is applied to the cathode 700 in order to sufficiently light the light emitters 410, 420, and 430.

In such a liquid crystal display device, red, green, and blue colors can be displayed by a light emitter even without a backlight, thereby reducing the thickness and weight of the liquid crystal display and reducing manufacturing costs. In addition, since the photolithography process is performed only once when the insulating film 300 is formed when the color filter substrate is manufactured, the process may be simplified and the manufacturing cost may be reduced.

As described above, when the color filter substrate is manufactured by using the light emitter, the manufacturing cost can be reduced by simplifying the process, and since the backlight is not required, the thickness and weight of the liquid crystal display can be reduced.

Claims (37)

A first substrate on which a plurality of pixel electrodes and thin film transistors are formed; A second substrate facing the first substrate, A cathode formed on the second substrate, An insulating film formed on the cathode and having a plurality of openings and having a water or oil repellent surface; Red, green, and blue light emitting bodies smaller than the size of the pixel electrode and filling the openings, and An anode formed on the light-emitting body Liquid crystal display comprising a. delete In claim 1, The cathode includes a lower aluminum film and an upper calcium film. In claim 1, The insulating film is a liquid crystal display device made of a photosensitive resin containing polyimide (polyimide). delete In claim 1, The red, green, and blue light emitters are formed of any one of a polymer organic material, a low molecular organic material, and an inorganic material as a precursor. In claim 6, The polymer organic material is PPV (poly phenylene vinylene). In claim 7, The weight concentration of the PPV precursor is 0.3%. In claim 1, And a conductive polymer film formed on the light emitter. In claim 9, The conductive polymer layer is made of a polythiophene derivative (PEDOT) material doped with polystryrene sulfonic acid (PSS). The method of claim 1 or 9, A liquid crystal display device further comprising a polarizing film formed on said conductive polymer film. In claim 1, The anode is made of any one of ITO or IZO. In claim 1, And a plurality of cathode signal transfer pads formed on the edge of the second substrate in the same layer as the cathode. The method of claim 1 or 13, And a plurality of anode signal transmission pads formed on the edge of the second substrate with the same layer as the anode and not overlapping with the cathode signal transmission pads. In claim 1, The first substrate includes a plurality of gate lines and a plurality of data lines insulated from and intersecting the gate lines. The thin film transistor includes a gate electrode which is a part of the gate line, a semiconductor layer formed on the gate electrode, and a source electrode and a drain electrode formed on the semiconductor layer and included in the data line. The method of claim 15, And the semiconductor layer is formed of any one of amorphous silicon and n-type polycrystalline silicon. The method of claim 15, The gate electrode, the source electrode and the drain electrode include a chromium oxide film. delete In claim 1, The pixel electrode is made of any one of ITO and IZO. Forming a plurality of thin film transistors on the first substrate, Forming a plurality of pixel electrodes connected to the thin film transistors; Forming a cathode on a second substrate facing the first substrate, Forming an insulating film having a plurality of openings on the cathode and having a water / oil repellent surface; Forming red, green, and blue light emitting bodies smaller than the size of the pixel electrode in the openings, and Forming an anode on the light emitter Method of manufacturing a liquid crystal display comprising a. The method of claim 20, Plasma processing the insulating film using oxygen and CF ₄ gas, respectively. The method of claim 20, The cathode includes a lower aluminum film and a calcium film on the top. The method of claim 20, And the insulating film is formed of a photosensitive resin containing polyimide. The method of claim 20, The red, green, and blue light emitters are formed by using any one of a polymer organic material, a low molecular organic material, and an inorganic material as a precursor. The method of claim 24, The polymer organic material is PPV.  The method of claim 25, The weight concentration of the PPV precursor is 0.3% manufacturing method of the liquid crystal display device. The method of claim 20, And forming a conductive polymer film on the light emitter. The method of claim 27, And the conductive polymer film is formed of a PEDOT material doped with PSS. The method of claim 20 or 27, And forming a polarizing film on the conductive polymer film. The method of claim 20, The anode is formed of any one of ITO and IZO. The method of claim 20, And forming a plurality of cathode signal transmission pads at edges of the first substrate using the same layer as the cathode. 32. The method of claim 20 or 31, In the forming of the anode, a method of manufacturing a liquid crystal display device further comprising a plurality of anode signal transmission pads on the edge of the second substrate in the same layer as the anode not overlapping with the cathode signal transmission pad. The method of claim 20, The first substrate includes a plurality of gate lines and a plurality of data lines insulated from and intersecting the gate lines. The thin film transistor includes a gate electrode which is a part of the gate line, a semiconductor layer formed on the gate electrode, and a source electrode and a drain electrode formed on the semiconductor layer and included in the data line. The method of claim 33, The semiconductor layer is a method of manufacturing a liquid crystal display device made of any one of amorphous silicon or n-type polycrystalline silicon. The method of claim 33, The gate electrode, the source electrode and the drain electrode includes a chromium oxide film. delete The method of claim 20, The pixel electrode is made of any one of ITO and IZO.

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