KR100757694B1 - Multicoating heater using ceramic thermal spray coating for processing wafer - Google Patents

Multicoating heater using ceramic thermal spray coating for processing wafer Download PDF

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Publication number
KR100757694B1
KR100757694B1 KR1020060028180A KR20060028180A KR100757694B1 KR 100757694 B1 KR100757694 B1 KR 100757694B1 KR 1020060028180 A KR1020060028180 A KR 1020060028180A KR 20060028180 A KR20060028180 A KR 20060028180A KR 100757694 B1 KR100757694 B1 KR 100757694B1
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South Korea
Prior art keywords
spray coating
electrostatic chuck
film
insulating film
coating
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KR1020060028180A
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Korean (ko)
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김혜란
전영재
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김혜란
전영재
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Abstract

A multi coating heater using a ceramic spray coating for manufacturing a semiconductor and an LCD(Liquid Crystal Display) is provided to increase efficiency of a clean room by reducing a volume of a heater. An electrostatic chuck(10) fixes a wafer at suitable position in a chamber. An insulating unit(11) is formed on a main frame of the electrostatic chuck in order to control temperature with a spray coating. A static electricity generating unit(18) is formed on the insulating unit. A power supplying unit(12) supplies power to the insulating unit. The insulating unit includes a first dielectric(11a), a heating layer(11b), a second dielectric(11c), a through hole(17), and a temperature detecting sensor(13). The first dielectric is formed on the electrostatic chuck by a plasma spray coating. The heating layer is formed on the first dielectric by the spray coating. The second dielectric is formed on the heating layer by the spray coating. Power is supplied to the heating layer. The through hole is vertically formed on the main frame to be communicated with the first dielectric. The temperature detecting sensor is mounted on a lower end of the electrostatic chuck through the through hole.

Description

반도체 및 ＬＣＤ 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치{Multicoating heater using ceramic thermal spray coating for processing wafer}Multicoating heater using ceramic thermal spray coating for processing wafer}

도 1은 본 발명에 따른 반도체 및 LCD 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치를 나타내는 장치구성도.1 is a device configuration diagram showing a multi-coating heating device using a ceramic thermal spray coating of the semiconductor and LCD manufacturing equipment according to the present invention.

도 2는 도 1의 정전척의 발열막이 분리형성된 일실시예를 나타내는 평면도.FIG. 2 is a plan view illustrating an embodiment in which a heating film of the electrostatic chuck of FIG. 1 is separated and formed; FIG.

도 3은 종래기술에 따른 반도체 및 LCD 제조장비의 정전척의 구조를 나타내는 단면도.Figure 3 is a cross-sectional view showing the structure of the electrostatic chuck of the semiconductor and LCD manufacturing equipment according to the prior art.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10 : 정전척 11 : 절연부10: electrostatic chuck 11: insulation

11a : 제1절연막 11b : 발열막11a: first insulating film 11b: heating film

11b' : 구획부 11c : 제2절연막11b ': compartment 11c: second insulating film

12 : 전원공급부 13 : 온도감지센서12: power supply unit 13: temperature sensor

14 : 컨트롤러 15 : 전원공급부14 controller 15 power supply

16 : 전원선 17 : 관통홀16 power line 17 through hole

18 : 정전기발생부18: static electricity generating unit

본 발명은 반도체 및 LCD 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치에 관한 것으로서, 더욱 상세하게는 반도체 및 LCD 제조공정 중에 식각과 증착공정 장비의 정전척에 플라스마 용사코팅으로 적층된 제1절연막, 발열막 및 제2절연막을 제공함으로써, 모재에 얇은 막을 직접 코팅하여 열전달이 우수하고, 모서리 및 굴곡진 부분의 밀착성 향상으로 정전척의 전체 온도를 균일하게 할 수 있도록 한 반도체 및 LCD 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치에 관한 것이다.The present invention relates to a multi-coating heating device using ceramic thermal spray coating of semiconductor and LCD manufacturing equipment, and more particularly, a first insulating film laminated by plasma thermal spray coating on an electrostatic chuck of an etching and deposition process equipment during semiconductor and LCD manufacturing process. By providing a heating film and a second insulating film, coating a thin film directly on the base material for excellent heat transfer, and improving the adhesion of corners and curved portions to make the entire temperature of the electrostatic chuck uniform. It relates to a multi-coating heating device using a thermal spray coating.

일반적으로 반도체 및 LCD의 제조 공정 중에 증착 공정과 식각공정을 위한 장비에는 챔버내에서 웨이퍼를 정위치에 고정시키기 위한 정전척(Electro-Static Chuck)이 포함되어 있다.In general, the equipment for the deposition process and the etching process during the manufacturing process of the semiconductor and LCD includes an electrostatic chuck for holding the wafer in place in the chamber.

상기 정전척에 웨이퍼를 정위치로 고정시키는 이유는 웨이퍼에 대한 증착 및 식각공정을 진행하기 위함으로서, 상기 증착공정은 반도체 공정중 CVD(Chemical Vaporized Deposit)공정으로 진공중의 챔버에 화학증착을 통하여 웨이퍼에 금속(Metal), 폴리(Poly), 옥사이드(Oxide) 등의 막을 형성시키는 공정을 말하고, 상기 식각공정은 웨이퍼에 도포된 금속, 폴리, 옥사이드 등의 막을 플라즈마와 가스 또는 에칭액 등을 이용하여 파내는(etching) 공정을 말한다.The reason for fixing the wafer in place in the electrostatic chuck is to proceed with the deposition and etching process for the wafer, the deposition process is a chemical vapor deposition deposit (CVD) process in the semiconductor process through the chemical vapor deposition in the chamber in the vacuum It refers to a process of forming a film of metal, poly, oxide, etc. on the wafer, and the etching process uses a plasma, a gas, or an etchant to form a film of metal, poly, oxide, etc., applied to the wafer. Etching refers to the process.

첨부한 도 3은 종래의 반도체 및 LCD 제조용 정전척의 구조를 나타내는 단면도이다.3 is a cross-sectional view showing the structure of a conventional electrostatic chuck for semiconductor and LCD manufacturing.

도 3에 도시된 종래의 정전척 구조를 살펴보면, 알루미늄 기판(101)을 베이스판으로 하여 그 위에 절연막(102)이 형성되고, 이 절연막(102)의 상면에는 고전압이 인가되는 부분으로서 도전막(103)이 형성되며, 이 도전막(103)의 상면에는 웨이퍼 등이 안착되는 부분으로서 유전막(104)이 형성된 구조로 되어 있다.Referring to the conventional electrostatic chuck structure shown in FIG. 3, an insulating film 102 is formed on the aluminum substrate 101 as a base plate, and a high voltage is applied to the upper surface of the insulating film 102 as a conductive film ( 103 is formed, and the dielectric film 104 is formed on the upper surface of the conductive film 103 as a portion on which a wafer or the like is seated.

특히, 상기 절연막(102)과 도전막(103)과 유전막(104)은 서로 평행하게(수평) 배열을 이루고 있다.In particular, the insulating film 102, the conductive film 103, and the dielectric film 104 are arranged in parallel (horizontal) with each other.

또한, 상기 유전막(104)의 상면에는 헬륨가스의 분포를 위하여 헬륨공급원과 연결된 헬륨통로(105)가 소정의 패턴(pattern)을 이루며 오목한 홈 형태로 형성되어 있다.In addition, on the upper surface of the dielectric film 104, a helium passage 105 connected to a helium source is formed in a concave groove shape in a predetermined pattern to distribute helium gas.

여기서, 상기 정전척의 전원공급을 위한 구조를 살펴보면, 상기 알루미늄 기판(101)에 전원공급용 홀(106)이 형성되고, 이 홀(106)을 통하여 고압제공수단과 연결되는 전원선(107)이 내재되며, 이 전원선(107)은 상기 도전막(103)에 고압을 제공할 수 있게 연결된다.Here, looking at the structure for the power supply of the electrostatic chuck, a power supply hole 106 is formed in the aluminum substrate 101, the power line 107 is connected to the high-voltage supply means through the hole 106 is This power line 107 is inherently connected to the conductive film 103 so as to provide a high voltage.

따라서, 상기 고압제공수단으로부터 소정의 고전압이 전원선(107)을 경유하여 상기 정전척(100)의 도전막(103)에 제공된다.Therefore, a predetermined high voltage is provided from the high voltage providing means to the conductive film 103 of the electrostatic chuck 100 via the power supply line 107.

한편, 상기 전원공급용 홀(106)의 내경면은 별도의 절연막(108)으로 덮혀지게 된다.On the other hand, the inner diameter surface of the power supply hole 106 is covered with a separate insulating film (108).

이러한 구성으로 이루어진 종래의 정전척에 웨이퍼를 고정(chucking)시키는 상태에 대하여 설명하면 다음과 같다.A state of chucking a wafer to a conventional electrostatic chuck having such a configuration will be described below.

먼저, 상기 정전척(100)의 유전막(104) 상면에 반도체 제조용 웨이퍼(109)의 저면이 밀착되게 안착시킨 상태에서 상기 고압제공수단으로부터 소정 수준의 고압이 전원선(107)을 경유하여 상기 도전막(103)에 제공된다.First, a predetermined level of high pressure is supplied from the high voltage supply means via the power supply line 107 while the bottom surface of the semiconductor manufacturing wafer 109 is brought into close contact with the top surface of the dielectric film 104 of the electrostatic chuck 100. To the membrane 103.

이렇게 상기 도전막(103)에 고전압이 인가되면, 상기 유전막(104)과 도전막(103) 사이에서 정전기가 발생되고, 이 정전기에 의하여 유전막(104)에 안착된 웨이퍼가 견고하게 고정(chucking)된 상태가 되고, 이어서 웨이퍼(109)에 대한 증착 및 식각 공정이 진행된다.When a high voltage is applied to the conductive film 103 in this manner, static electricity is generated between the dielectric film 104 and the conductive film 103, and the wafer seated on the dielectric film 104 by the static electricity is firmly chucked. And then the deposition and etching processes on the wafer 109 are performed.

그러나, 상기 정전척의 온도조절을 위해 사용하는 히터는 합성수지 또는 세라믹 판재를 사용하여 접착제로 서로 결합하는 구조인 바, 상기 접착제의 결합력이 약하여 정전척과 합성수지 또는 세라믹 판재가 분리되거나 히터의 온도조절 성능이 저하되는 문제점이 있다.However, the heater used to control the temperature of the electrostatic chuck is a structure that is bonded to each other by an adhesive using a synthetic resin or ceramic plate, the adhesive strength of the adhesive is weak, so that the electrostatic chuck and the synthetic resin or ceramic plate is separated or the temperature control performance of the heater There is a problem of deterioration.

또한, 상기 정전척에 부착되는 히터의 부피가 커지게 되므로, 정전척과의 밀착성 부족으로 히터의 열전달 효율이 떨어지고, 특히 정전척의 모서리, 굴곡진 부분에서 밀착성 부족때문에 정전 전체의 온도가 불균일하게 되는 문제점이 있다.In addition, since the volume of the heater attached to the electrostatic chuck becomes large, the heat transfer efficiency of the heater decreases due to insufficient adhesion with the electrostatic chuck, and in particular, the temperature of the entire electrostatic becomes uneven due to the lack of adhesion at the corners and curved portions of the electrostatic chuck. There is this.

본 발명은 상기와 같은 점을 감안하여 안출한 것으로서, 반도체 및 LCD 제조공정 중에 식각과 증착공정 장비의 정전척에 플라스마 용사코팅으로 적층된 제1절연막, 발열막 및 제2절연막을 제공함으로써, 모재에 얇은 막을 직접 코팅하여 열전 달이 우수하고, 모서리 및 굴곡진 부분의 밀착성 향상으로 정전척의 전체 온도를 균일하게 할 수 있도록 한 반도체 및 LCD 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치를 제공하는데 그 목적이 있다.The present invention has been made in view of the above, by providing a first insulating film, a heating film and a second insulating film laminated by plasma spray coating on the electrostatic chuck of the etching and deposition process equipment during the semiconductor and LCD manufacturing process, It provides a multi-coating heating device using ceramic spray coating of semiconductor and LCD manufacturing equipment that has excellent heat transfer by coating a thin film directly on the surface and improves adhesion of corners and curved parts to make the overall temperature of the electrostatic chuck uniform. The purpose is.

상기한 목적을 달성하기 위한 본 발명은 반도체 및 LCD의 제조장비의 챔버내에서 웨이퍼를 정위치에 고정시키기 위한 정전척과; 상기 정전척의 본체에 온도조절을 위해 용사코팅으로 형성된 절연부와; 상기 절연부 위에 형성된 정전기발생부와; 상기 절연부에 전원을 공급하는 전원공급부;를 포함하여 구성된다.The present invention for achieving the above object and the electrostatic chuck for fixing the wafer in place in the chamber of the manufacturing equipment of the semiconductor and LCD; An insulation part formed by a thermal spray coating on a body of the electrostatic chuck for temperature control; An electrostatic generator formed on the insulation unit; It is configured to include; a power supply for supplying power to the insulation.

바람직한 구현예로서, 상기 절연부는 플라즈마 용사코팅에 의해 상기 정전척에 형성된 제1절연막과, 이 제1절연막 위에 상기 용사코팅에 의해 형성된 발열막과, 이 발열막 위에 상기 용사코팅에 의해 형성된 제2절연막을 포함하여 구성되고, 상기 발열막에 전원이 공급되는 것을 특징으로 한다.In a preferred embodiment, the insulating portion includes a first insulating film formed on the electrostatic chuck by plasma spray coating, a heating film formed by the thermal spray coating on the first insulating film, and a second film formed by the thermal spray coating on the heating film. It is configured to include an insulating film, characterized in that power is supplied to the heat generating film.

더욱 바람직한 구현예로서, 상기 제1절연막과 연통되도록 상기 정전척의 본체에 수직방향으로 형성된 관통홀과, 이 관통홀을 통해 정전척의 하단에 장착된 온도감지센서를 포함하는 것을 특징으로 한다.In a more preferred embodiment, it characterized in that it comprises a through-hole formed in the direction perpendicular to the main body of the electrostatic chuck to communicate with the first insulating film, and a temperature sensor mounted on the lower end of the electrostatic chuck through the through hole.

또한, 상기 온도감지센서의 신호를 입력받아 상기 전원공급부의 전원공급을 조절하는 컨트롤러를 포함하는 것을 특징으로 한다.In addition, it characterized in that it comprises a controller for adjusting the power supply of the power supply by receiving the signal of the temperature sensor.

또한, 상기 제1절연막 및 제2절연막은 세라믹 재질이고, 상기 발열막은 금속재질인 것을 특징으로 한다.In addition, the first insulating film and the second insulating film is characterized in that the ceramic material, the heating film is a metal material.

또한, 상기 용사코팅의 열원은 플라즈마인 것을 특징으로 한다.In addition, the heat source of the thermal spray coating is characterized in that the plasma.

또한, 상기 제2절연막 위에 정전기발생부가 형성된 것을 특징으로 한다.In addition, the electrostatic generator is formed on the second insulating film.

또한, 상기 발열막은 위치에 따라 온도조절가능하도록 상기 제1절연막 및 제2절연막 사이에서 일정한 크기 및 모양을 갖는 다수의 구획부로 분리형성된 것을 특징으로 한다.In addition, the heating film is characterized in that the separation formed into a plurality of partitions having a predetermined size and shape between the first insulating film and the second insulating film so that the temperature can be adjusted according to the position.

이하, 본 발명의 바람직한 실시예를 첨부도면을 참조로 상세하게 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

첨부한 도 1은 본 발명에 따른 반도체 및 LCD 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치를 나타내는 장치구성도이고, 도 2는 도 1의 정전척의 발열막이 분리형성된 일실시예를 나타내는 평면도이다.1 is a device configuration diagram illustrating a multi-coating heating device using ceramic thermal spray coating of semiconductor and LCD manufacturing equipment according to the present invention, and FIG. 2 is a plan view illustrating an embodiment in which the heating film of the electrostatic chuck of FIG. 1 is separated and formed. .

본 발명은 반도체 및 LCD의 제조 공정 중에 증착 공정과 식각공정을 위한 장비에는 챔버내에서 웨이퍼를 정위치에 고정시키기 위한 정전척(10)(Electro-Static Chuck)에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck 10 for fixing a wafer in a chamber in a chamber for deposition and etching processes in semiconductor and LCD manufacturing processes.

본 발명에 따른 다중코팅 발열장치는 정전척(10)의 온도조절을 위해 플라즈마 용사코팅을 이용하여 상기 정전척(10)에 직접 얇은 막구조의 절연부(11)를 형성하여 열전달 및 밀착성을 향상시킬 수 있도록 한 점에 주안점이 있다.The multi-coating heating device according to the present invention forms a thin film insulation portion 11 directly on the electrostatic chuck 10 by using a plasma spray coating to control the temperature of the electrostatic chuck 10 to improve heat transfer and adhesion. The point is to make it possible.

최근 고도의 복잡한 기술은, 여러 가지의 기능을 가지는 재료를 필요로 하고 있다. 단일소재로 다양한 기능을 발휘하는 재료를 제작하는 것은 어려운 일이다. In recent years, highly complex technologies require materials having various functions. It is difficult to produce materials with various functions from a single material.

하지만 소재가 가지고 있는 특성을 살리면서 재료표면에 피복이 가능하다면, 단일소재에 결함을 보완할 수 있으며, 새로운 기능을 부여할 수 있다. 상기의 대응책으로 현재 많은 표면처리법이 개발되고 있으며, 표면처리법중 하나인 용사법은 산업전반에 걸쳐 폭넓게 이용되고 있다. However, if the surface of the material can be coated while utilizing the properties of the material, the defect can be compensated for a single material and given a new function. As a countermeasure, many surface treatment methods are currently being developed, and one of the surface treatment methods has been widely used throughout the industry.

용사(Thermal Spray, 溶射)란 분말 또는 선형재료를 고온열원으로부터 용융액적으로 변화시켜 고속으로 기재에 충돌시켜 급냉응고 적층한 피막을 형성하는 기술이다. Thermal spray (溶 射) is a technique of changing the powder or linear material from a high temperature heat source into a molten liquid to impinge on the substrate at high speed to form a quench solidified film.

재료의 가열, 용융을 위해 에너지 밀도가 높은 연소화염, Arc 및 플라즈마 등의 열원을 필요로 한다. For heating and melting of materials, heat sources such as combustion flames with high energy density, arc and plasma are required.

용사는 성질이 다른 재료로 기재표면에 피막을 형성하는 기술은 기재가 보유하고 있는 특성을 살리고, 결함을 보완할 수 있으며, 재료기능의 다양화 및 고도화를 가능하게 하는 표면처리법의 하나이다. The technique of forming a film on the surface of the substrate by using different materials for thermal spraying is one of the surface treatment methods that make use of the characteristics possessed by the substrate, to compensate for defects, and to diversify and enhance material functions.

용사법을 이용하면 고속으로 두꺼운 피막형성이 가능하며, 금속, 세라믹, 유리 및 플라스틱 등의 재료를 사용할 수 있다. 그리고, 재료의 종류 및 용사공정의 독자적 특징을 잘 이용하는 것으로부터 다른 방법을 이용해서 얻을 수 없는 표면층을 만들어 낼 수 있다. The thermal spraying method enables the formation of a thick film at a high speed, and it is possible to use materials such as metals, ceramics, glass and plastics. And the surface layer which cannot be obtained using another method can be made from using the kind of material and the original characteristic of a thermal spraying process well.

여기서, 본 발명에 따른 다중코팅 발열장치는 정전척에 플라즈마를 열원으로 하는 용사코팅에 의해 형성된 절연부(11)와, 이 절연부(11)에 전원을 공급하는 전원공급부(12)와, 절연부(11)의 온도를 감지하는 온도감지센서(13) 및 전원공급을 조절하는 컨트롤러(14)를 포함하여 구성된다.Here, the multi-coating heating device according to the present invention is an insulating portion 11 formed by thermal spray coating using a plasma as a heat source to the electrostatic chuck, a power supply 12 for supplying power to the insulating portion 11, and insulation It comprises a temperature sensor 13 for sensing the temperature of the unit 11 and a controller 14 for adjusting the power supply.

상기 정전척(10)은 금속성 재질이고, 이 정전척(10)의 온도를 조절하기 위해 정전척(10)의 본체에 다수의 얇은 막이 적층된 절연부(11)가 제공된다.The electrostatic chuck 10 is made of a metallic material, and an insulating portion 11 in which a plurality of thin films are stacked is provided on a main body of the electrostatic chuck 10 to control the temperature of the electrostatic chuck 10.

상기 절연부(11)는 플라즈마 용사코팅에 의해 정전척의 본체에 직접 형성된 제1절연막(11a)과, 이 제1절연막(11a) 위에 플라즈마 용사코팅에 의해 형성된 발열막(11b)과, 이 발열막(11b) 위에 플라즈마 용사코팅에 의해 형성된 제2절연막(11c)으로 구성되어 있다.The insulating portion 11 includes a first insulating film 11a formed directly on the body of the electrostatic chuck by plasma spray coating, a heat generating film 11b formed by plasma spray coating on the first insulating film 11a, and the heat generating film. And a second insulating film 11c formed by plasma spray coating on the 11b.

상기 제1절연막(11a), 발열막(11b) 및 제2절연막(11c)은 수평방향으로 평행하게 적층형성되어 있다.The first insulating film 11a, the heating film 11b, and the second insulating film 11c are stacked in parallel in the horizontal direction.

상기 발열막(11b)은 정전척(10)에 실질적으로 열을 가하여 온도를 조절하는 수단으로서, 이 발열막(11b)은 전원을 공급하는 전원공급부(12)와 전기적으로 연결되어 있다. 이때, 상기 전원공급부(12)는 컨트롤러(14)와 전기적으로 연결되어 있다.The heating film 11b is a means for regulating the temperature by substantially applying heat to the electrostatic chuck 10, and the heating film 11b is electrically connected to a power supply 12 for supplying power. In this case, the power supply unit 12 is electrically connected to the controller 14.

또한, 상기 발열막(11b)은 제1절연막(11a) 및 제2절연막(11c) 사이에서 일체로 형성될 수 있으나, 도 2에 도시한 바와 같이 일정한 면적 및 모양을 갖는 다수개의 구획부(11b')로 분리되고, 이 구획부(11b')에는 전원공급이 별개로 이루어 질 수 있도록 전원공급부(12)와 전기적으로 연결될 수 있다.In addition, although the heating film 11b may be integrally formed between the first insulating film 11a and the second insulating film 11c, a plurality of partitions 11b having a constant area and shape, as shown in FIG. It is separated by '), it can be electrically connected to the power supply unit 12 so that the power supply can be made separately to the partition (11b').

상기 정전척(10)의 전원공급을 위한 구조를 살펴보면, 정전척(10) 본체에 전원공급용 홀(15)이 형성되고, 이 홀(15)을 통하여 전원공급부(12)과 연결되는 전원선(16)이 내재되며, 이 전원선(16)은 발열막(11b)에 고압을 제공할 수 있게 연결된다.Looking at the structure for power supply of the electrostatic chuck 10, a power supply hole 15 is formed in the main body of the electrostatic chuck 10, the power line connected to the power supply unit 12 through the hole 15 Numeral 16 is inherent, and the power supply line 16 is connected to provide a high pressure to the heat generating film 11b.

따라서, 상기 전원공급부로부터 소정의 고전압이 전원선(16)을 경유하여 상기 정전척(10)의 발열막(11b)에 제공된다.Therefore, a predetermined high voltage is supplied from the power supply to the heat generating film 11b of the electrostatic chuck 10 via the power line 16.

한편, 상기 전원공급용 홀(15)의 내경면은 별도의 절연막으로 덮혀지게 된 다.On the other hand, the inner diameter surface of the power supply hole 15 is covered with a separate insulating film.

상기 정전척(10)에는 제1절연막(11a)과 연통되도록 수직방향으로 관통홀(17)이 형성되고, 이 관통홀(17)을 통해 절연부(11) 및 정전척(10)의 온도를 감지할 수 있도록 정전척(10) 하단에 온도감지센서(13)가 부착되어 있다. 이때, 온도감지센서(13)는 컨트롤러(14)와 전기적으로 연결되어 있다.A through hole 17 is formed in the electrostatic chuck 10 in a vertical direction so as to communicate with the first insulating film 11 a, and through the through hole 17, temperatures of the insulating part 11 and the electrostatic chuck 10 are adjusted. The temperature sensor 13 is attached to the lower end of the electrostatic chuck 10 so as to be detected. At this time, the temperature sensor 13 is electrically connected to the controller 14.

상기 제1절연막(11a) 및 제2절연막(11c)은 플라즈마 용사코팅에 의한 세라믹 재료이고, 발열막(11b)은 플라즈마 용사코팅에 의한 금속재질인 것이 바람직하다.It is preferable that the first insulating film 11a and the second insulating film 11c are ceramic materials by plasma spray coating, and the heat generating film 11b is a metal material by plasma spray coating.

상기 컨트롤러(14)는 온도감지센서(13)의 신호를 입력받아 전원공급부(12)의 전원공급을 조절하게 된다.The controller 14 receives the signal of the temperature sensor 13 to adjust the power supply of the power supply 12.

또한, 상기 절연부(11)의 상부에는 종래의 정전척과 같은 정전기발생부(18)가 형성된다. In addition, an electrostatic generator 18 such as a conventional electrostatic chuck is formed on the insulating unit 11.

즉, 정전기발생부(18)는 절연막, 고전압이 공급되는 도전막 및 상면에 웨이퍼 등이 안착되는 유전막이 차례로 적층되고, 상기 도전막에 고전압이 인가되면, 상기 유전막과 도전막 사이에서 정전기가 발생되며, 이 정전기에 의하여 유전막에 안착된 웨이퍼가 견고하게 고정(chucking)되는 구조이다.That is, in the electrostatic generator 18, an insulating film, a conductive film to which a high voltage is supplied, and a dielectric film on which a wafer is placed are stacked on the upper surface, and when high voltage is applied to the conductive film, static electricity is generated between the dielectric film and the conductive film. The wafer mounted on the dielectric film by the static electricity is firmly chucked.

이와 같은 구성에 의해, 본 발명은 정전척(10)에 형성된 막구조의 절연부(11)를 통해 정전척(10)에 열을 가하고, 절연부(11)에 부착된 온도감지센서(13) 및 전원공급부(12)와 전원을 조절하는 컨트롤러(14)에 의해 정전척 내부의 온도를 조절함으로써, 종래의 히터의 부피를 크게 줄여 클린룸의 효율을 향상시킬 수 있다.By such a configuration, the present invention applies heat to the electrostatic chuck 10 through the insulating portion 11 of the film structure formed on the electrostatic chuck 10, the temperature sensor 13 attached to the insulating portion 11 And by controlling the temperature inside the electrostatic chuck by the power supply 12 and the controller 14 to adjust the power, it is possible to significantly reduce the volume of the conventional heater to improve the efficiency of the clean room.

특히, 플라즈마 용사코팅을 이용하여 금속모재에 직접 세락믹 재료의 제1절 연막(11a), 발열막(11b) 및 제2절연막(11c)을 형성함으로써, 열전달이 우수하고 정전척(10)의 모서리와 굴곡진 부분의 밀착성을 향상시킬 수 있다.In particular, the first thermal insulation film 11a, the heating film 11b, and the second insulating film 11c of the ceramic material are formed directly on the metal base material by using a plasma spray coating, so that the heat transfer is excellent and the electrostatic chuck 10 of the electrostatic chuck 10 is formed. It is possible to improve the adhesion between the edge and the bent portion.

또한, 전원이 공급되는 발열막(11b)이 다수의 구획부(11b')로 분리되고, 컨트롤러(14)에 의해 구획부(11b')의 위치에 따라 온도를 조절할 수 있으므로, 정전척(10)의 온도를 균일하게 하는데 용이하다.In addition, since the heating film 11b to which power is supplied is separated into a plurality of partitions 11b ', and the temperature can be adjusted according to the position of the partitions 11b' by the controller 14, the electrostatic chuck 10 It is easy to make the temperature of) uniform.

이상에서 본 바와 같이, 본 발명에 따른 반도체 및 LCD 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치에 의하면, 정전척에 형성된 막구조의 절연부를 통해 정전척에 열을 가하고, 절연부에 부착된 온도감지센서 및 전원공급부와 전원을 조절하는 컨트롤러에 의해 정전척 내부의 온도를 조절함으로써, 종래의 히터의 부피를 크게 줄여 클린룸의 효율을 향상시킬 수 있다.As described above, according to the multi-coating heating device using the ceramic thermal spray coating of the semiconductor and LCD manufacturing equipment according to the present invention, the heat is applied to the electrostatic chuck through the insulating portion of the film structure formed on the electrostatic chuck, attached to the insulating portion By controlling the temperature inside the electrostatic chuck by the temperature sensor and the power supply and the controller to control the power, it is possible to greatly reduce the volume of the conventional heater to improve the efficiency of the clean room.

특히, 플라즈마 용사코팅을 이용하여 금속모재에 직접 세락믹 재료의 제1절연막, 발열막 및 제2절연막을 형성함으로써, 열전달이 우수하고 정전척의 모서리와 굴곡진 부분의 밀착성을 향상시킬 수 있다.In particular, by forming the first insulating film, the heating film, and the second insulating film of the ceramic material directly on the metal base material by using the plasma spray coating, the heat transfer is excellent and the adhesion between the edges of the electrostatic chuck and the curved portion can be improved.

또한, 전원이 공급되는 발열막가 다수의 구획부로 분리되고, 컨트롤러에 의해 구획부의 위치에 따라 온도를 조절할 수 있으므로, 정전척의 온도를 균일하게 하는데 용이한 장점이 있다.In addition, since the heating film supplied with the power is separated into a plurality of compartments and the temperature can be adjusted according to the position of the compartments by the controller, there is an advantage in that the temperature of the electrostatic chuck is easy to be uniform.

Claims (8)

삭제delete 삭제delete 반도체 및 LCD의 제조장비의 챔버내에서 웨이퍼를 정위치에 고정시키기 위한 정전척과, 상기 정전척의 본체에 온도조절을 위해 용사코팅으로 형성된 절연부와, 상기 절연부 위에 형성된 정전기발생부와, 상기 절연부에 전원을 공급하는 전원공급부를 포함하여 구성된 반도체 및 LCD 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치에 있어서,An electrostatic chuck for fixing the wafer in position in the chamber of the manufacturing equipment of the semiconductor and LCD, an insulator formed by thermal spray coating on the body of the electrostatic chuck, an electrostatic generator formed on the insulator, and the insulator In the multi-coating heating device using a ceramic spray coating of semiconductor and LCD manufacturing equipment including a power supply for supplying power to the unit, 상기 절연부는 플라즈마 용사코팅에 의해 상기 정전척에 형성된 제1절연막과, 이 제1절연막 위에 상기 용사코팅에 의해 형성된 발열막과, 이 발열막 위에 상기 용사코팅에 의해 형성된 제2절연막을 포함하여 구성되고, 상기 발열막에 전원이 공급되는 한편, 상기 제1절연막과 연통되도록 상기 정전척의 본체에 수직방향으로 형성된 관통홀과, 이 관통홀을 통해 정전척의 하단에 장착된 온도감지센서를 포함하는 것을 특징으로 하는 반도체 및 LCD 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치.The insulating portion includes a first insulating film formed on the electrostatic chuck by plasma spray coating, a heating film formed by the thermal spray coating on the first insulating film, and a second insulating film formed by the thermal spray coating on the heating film. And a through hole formed in a direction perpendicular to the main body of the electrostatic chuck to supply power to the heat generating film and to communicate with the first insulating film, and a temperature sensing sensor mounted at a lower end of the electrostatic chuck through the through hole. Multi-coating heating device using ceramic thermal spray coating of semiconductor and LCD manufacturing equipment. 청구항 3에 있어서, 상기 온도감지센서의 신호를 입력받아 상기 전원공급부의 전원공급을 조절하는 컨트롤러를 포함하는 것을 특징으로 하는 반도체 및 LCD 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치.The multi-coating heating apparatus using ceramic spray coating of semiconductor and LCD manufacturing equipment of claim 3, further comprising a controller configured to control the power supply of the power supply unit by receiving the signal of the temperature sensor. 삭제delete 삭제delete 삭제delete 청구항 4에 있어서, 상기 발열막은 위치에 따라 온도조절가능하도록 상기 제1절연막 및 제2절연막 사이에서 일정한 크기 및 모양을 갖는 다수의 구획부로 분리형성된 것을 특징으로 하는 반도체 및 LCD 제조장비의 세라믹 용사코팅을 이용한 다중코팅 발열 장치.The ceramic thermal spray coating of claim 4, wherein the heating film is separated into a plurality of partitions having a predetermined size and shape between the first insulating film and the second insulating film so as to be temperature-adjustable according to a position. Multi-coating heating device using.
KR1020060028180A 2006-03-29 2006-03-29 Multicoating heater using ceramic thermal spray coating for processing wafer KR100757694B1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101225544B1 (en) * 2011-03-24 2013-01-23 주식회사 디엠에스 Multi-stack Mask layer silicon-oxide etching method using the Hybrid Plasma Source and ESC heater
KR101455789B1 (en) * 2013-08-06 2014-11-03 주식회사 알지비하이텍 Heater for susceptor, and LCD manufacturing apparatus
CN110400772A (en) * 2018-04-24 2019-11-01 北京北方华创微电子装备有限公司 Electrostatic chuck and semiconductor processing equipment
CN110600419A (en) * 2019-09-20 2019-12-20 上海华力微电子有限公司 Electrostatic chuck and using method thereof
KR20220010567A (en) * 2016-06-24 2022-01-25 도쿄엘렉트론가부시키가이샤 Substrate processing system and temperature control method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030044499A (en) * 2001-11-30 2003-06-09 삼성전자주식회사 Electro static chuck and Method of Manufacturing Thereof
KR20030094493A (en) * 2002-06-04 2003-12-12 삼성전자주식회사 Chuck for supporting a substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030044499A (en) * 2001-11-30 2003-06-09 삼성전자주식회사 Electro static chuck and Method of Manufacturing Thereof
KR20030094493A (en) * 2002-06-04 2003-12-12 삼성전자주식회사 Chuck for supporting a substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101225544B1 (en) * 2011-03-24 2013-01-23 주식회사 디엠에스 Multi-stack Mask layer silicon-oxide etching method using the Hybrid Plasma Source and ESC heater
KR101455789B1 (en) * 2013-08-06 2014-11-03 주식회사 알지비하이텍 Heater for susceptor, and LCD manufacturing apparatus
KR20220010567A (en) * 2016-06-24 2022-01-25 도쿄엘렉트론가부시키가이샤 Substrate processing system and temperature control method
KR102465660B1 (en) * 2016-06-24 2022-11-09 도쿄엘렉트론가부시키가이샤 Substrate processing system and temperature control method
CN110400772A (en) * 2018-04-24 2019-11-01 北京北方华创微电子装备有限公司 Electrostatic chuck and semiconductor processing equipment
CN110400772B (en) * 2018-04-24 2021-10-15 北京北方华创微电子装备有限公司 Electrostatic chuck and semiconductor processing equipment
CN110600419A (en) * 2019-09-20 2019-12-20 上海华力微电子有限公司 Electrostatic chuck and using method thereof

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