KR100754724B1 - Insulating Interlayers for Liquid Crystal Display Element and Liquid Crystal Display Elements Using the Same - Google Patents

Insulating Interlayers for Liquid Crystal Display Element and Liquid Crystal Display Elements Using the Same Download PDF

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KR100754724B1
KR100754724B1 KR1020010049738A KR20010049738A KR100754724B1 KR 100754724 B1 KR100754724 B1 KR 100754724B1 KR 1020010049738 A KR1020010049738 A KR 1020010049738A KR 20010049738 A KR20010049738 A KR 20010049738A KR 100754724 B1 KR100754724 B1 KR 100754724B1
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liquid crystal
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미찌노리 니시까와
긴지 야마다
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제이에스알 가부시끼가이샤
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Abstract

본 발명은 (A) (A-1) 하기 화학식 1로 표시되는 화합물, (A-2) 하기 화학식 2로 표시되는 화합물, 및 (A-3) 하기 화학식 3으로 표시되는 화합물의 군에서 선택된 1종 이상의 화합물을 촉매 존재하에서 가수분해 축합하여 이루어진 가수분해 축합물을 가열함으로써 얻어지는 액정 표시 소자용 층간 절연막에 관한 것이다. The present invention is selected from the group consisting of (A) a compound represented by the following formula (A-1) (A-1), (A-2) a compound represented by the following formula (2), and (A-3) a compound represented by the following formula (3) The interlayer insulation film for liquid crystal display elements obtained by heating the hydrolysis-condensation product formed by hydrolyzing and condensing a compound more than 1 type in the presence of a catalyst.

<화학식 1><Formula 1>

RaSi(OR1)4-a R a Si (OR 1 ) 4-a

<화학식 2><Formula 2>

Si(OR2)4 Si (OR 2 ) 4

<화학식 3><Formula 3>

R3 b(R4O)3-bSi-(R7)d-Si(OR5) 3-cR6 c R 3 b (R 4 O) 3-b Si- (R 7 ) d -Si (OR 5 ) 3-c R 6 c

식 중, In the formula,

R은 수소 원자, 불소 원자 또는 1가의 유기기이고, R1은 1가의 유기기이며, a는 1 내지 2의 정수를 나타내고, R2는 1가의 유기기를 나타내고, R3 내지 R6 은 동일하거나 또는 상이하며 각각 1가의 유기기이고, b 내지 c는 동일하거나 또는 상이하 며 0 내지 2의 정수이고, R7은 산소 원자, 페닐렌기 또는 -(CH2)n-으로 표시되는 기 (여기서, n은 1 내지 6의 정수임)이고, d는 0 또는 1을 나타낸다. R is a hydrogen atom, a fluorine atom or a monovalent organic group, R 1 is a monovalent organic group, a is an integer of 1 to 2, R 2 represents a monovalent organic group, R 3 to R 6 are the same or Or different and each monovalent organic group, b to c are the same or different and are an integer from 0 to 2, R 7 is an oxygen atom, a phenylene group or a group represented by-(CH 2 ) n- n is an integer from 1 to 6), and d represents 0 or 1.

액정 표시 소자, 층간 절연막, TFT 어레이 기판, 대향 기판, 저비유전율, 가수분해, 축합 Liquid crystal display element, interlayer insulation film, TFT array substrate, opposing substrate, low dielectric constant, hydrolysis, condensation

Description

액정 표시 소자용 층간 절연막 및 이를 사용한 액정 표시 소자 {Insulating Interlayers for Liquid Crystal Display Element and Liquid Crystal Display Elements Using the Same}Insulating interlayers for liquid crystal display elements and liquid crystal display elements using the same

도 1은 본 발명의 실시예 7에서의 TFT 어레이 기판의 단면 개념도이다.1 is a cross-sectional conceptual view of a TFT array substrate in Embodiment 7 of the present invention.

도 2는 본 발명의 실시예 7에서의 대향 기판의 단면 개념도이다.2 is a cross-sectional conceptual view of an opposing substrate in a seventh embodiment of the present invention.

도 3은 본 발명의 실시예 7에서의 LCD의 단면 개념도이다.3 is a schematic cross-sectional view of the LCD of Embodiment 7 of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for main parts of the drawings>

1: 유리 기판 2: 하층막1: glass substrate 2: underlayer film

3: 비정질 실리콘층 4: 게이트 전극3: amorphous silicon layer 4: gate electrode

5: 반도체막 5': n+층5: semiconductor film 5 ': n + layer

6: 절연막 7: 소스 배선6: insulating film 7: source wiring

8: 드레인 배선 8': 화소 전극8: drain wiring 8 ': pixel electrode

10: TFT 어레이 기판 11: 유리 기판10: TFT array substrate 11: glass substrate

12: 투명 대향 전극 20: 대향 기판12: transparent counter electrode 20: counter substrate

22: 액정 배향막 23: TN 액정22: liquid crystal aligning film 23: TN liquid crystal

24: 편광판 30: 액정 셀24: polarizing plate 30: liquid crystal cell

31: LCD31: LCD

본 발명은 액정 표시 소자용 층간 절연막에 관한 것으로, 보다 구체적으로는 액정 표시 소자 (LCD)를 구동시키는 TFT (Thin Film Transistor)에 사용되는 층간 절연막 재료로서 저온도 형성이 가능하고, 저비유전율을 나타내며, 동시에 도포막의 내열성이 우수한 LCD용 층간 절연막 및 이를 이용한 LCD에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an interlayer insulating film for a liquid crystal display device, and more particularly, to form a low temperature as an interlayer insulating film material used for a thin film transistor (TFT) for driving a liquid crystal display device (LCD), and exhibit a low dielectric constant. In addition, the present invention relates to an LCD interlayer insulating film having excellent heat resistance of a coating film and an LCD using the same.

종래부터 LCD용 층간 절연막으로서 CVD법 등의 진공 공정으로 형성된 실리카 (SiO2)막이 많이 사용되고 있다. 그러나, LCD 화소의 고정밀화가 진행됨에 따라 LCD용 층간 절연막에 사용되는 SiO2막의 비유전율 (4.1)의 높이에 기인하는 LCD의 플리커가 문제가 되고 있다. 이 플리커를 해소하기 위해서 비유전율 3 이하의 LCD용 층간 절연막이 요구되고 있다.Conventionally, silica (SiO 2 ) films formed by vacuum processes such as the CVD method have been widely used as the interlayer insulating films for LCDs. However, as the precision of LCD pixels increases, the flicker of LCDs due to the height of the dielectric constant (4.1) of the SiO 2 film used for the LCD interlayer insulating film becomes a problem. In order to eliminate this flicker, an LCD interlayer insulating film having a relative dielectric constant of 3 or less is required.

이에 대하여 아크릴 수지 등으로 이루어지는 유기 층간 절연막이나 SOG (Spin on Glass)막이라고 불리우는 테트라알콕시실란의 가수분해 생성물을 주성분으로 하는 도포형 층간 절연막 등이 LCD용 층간 절연막으로서 검토되고 있지만, 아크릴 수지 등으로 이루어지는 유기 층간 절연막에서는 TFT 형성에 필요한 열 처리 공정 (350 ℃)에 대한 내열성이 떨어지고, 또한 SOG로 이루어지는 층간 절연막에서는 350 ℃라는 소성 조건에서는 3 이하의 비유전율을 달성할 수 없다는 문제를 갖고 있었다.On the other hand, coating type interlayer insulating films mainly composed of hydrolyzed products of tetraalkoxysilanes called organic interlayer insulating films made of acrylic resins and SOG (Spin on Glass) films have been studied as LCD interlayer insulating films. In the organic interlayer insulating film formed, heat resistance to the heat treatment step (350 ° C.) required for TFT formation is inferior, and in the interlayer insulating film made of SOG, a dielectric constant of 3 or less cannot be achieved under a firing condition of 350 ° C.

본 발명은 상기 문제점을 해결하기 위한 LCD용 층간 절연막에 관한 것이며, 보다 구체적으로는 LCD를 구동시키는 TFT로서 저온도 형성이 가능하고, 저비유전율을 나타내며, 동시에 도포막의 내열성이 우수한 LCD용 층간 절연막 및 이를 이용한 LCD를 제공하는 것을 목적으로 한다. The present invention relates to an LCD interlayer insulating film for solving the above problems, and more particularly, to a low temperature as a TFT for driving an LCD, and having a low relative dielectric constant, and at the same time excellent in heat resistance of the coating film, It is an object to provide an LCD using the same.

본 발명은The present invention

(A) (A-1) 하기 화학식 1로 표시되는 화합물, (A-2) 하기 화학식 2로 표시되는 화합물, 및 (A-3) 하기 화학식 3으로 표시되는 화합물의 군에서 선택된 1종 이상의 화합물을 촉매 존재하에서 가수분해 축합하여 이루어지는 가수분해 축합물을 가열함으로써 얻어지는 LCD용 층간 절연막에 관한 것이다. (A) (A-1) at least one compound selected from the group of compounds represented by formula (1), (A-2) compounds represented by formula (2), and (A-3) compounds represented by formula (3) The interlayer insulation film for LCD obtained by heating the hydrolysis condensate formed by hydrolytic condensation in presence of a catalyst is provided.

RaSi(OR1)4-a R a Si (OR 1 ) 4-a

Si(OR2)4 Si (OR 2 ) 4

R3 b(R4O)3-bSi-(R7)d-Si(OR5) 3-cR6 c R 3 b (R 4 O) 3-b Si- (R 7 ) d -Si (OR 5 ) 3-c R 6 c

식 중, In the formula,                     

R은 수소 원자, 불소 원자 또는 1가의 유기기이고, R is a hydrogen atom, a fluorine atom or a monovalent organic group,

R1은 1가의 유기기이며, R 1 is a monovalent organic group,

a는 1 내지 2의 정수를 나타내고, a represents an integer of 1 to 2,

R2는 1가의 유기기를 나타내고,R 2 represents a monovalent organic group,

R3 내지 R6은 동일하거나 또는 상이하며 각각 1가의 유기기이고,R 3 to R 6 are the same or different and are each monovalent organic group,

b 내지 c는 동일하거나 또는 상이하며 0 내지 2의 정수이고, b to c are the same or different and are an integer from 0 to 2,

R7은 산소 원자, 페닐렌기 또는 -(CH2)n-으로 표시되는 기 (여기서, n은 1 내지 6의 정수임)이고, R 7 is an oxygen atom, a phenylene group or a group represented by-(CH 2 ) n- , where n is an integer from 1 to 6,

d는 0 또는 1을 나타낸다. d represents 0 or 1.

이어서, 본 발명은 LCD용 층간 절연막을 갖는 LCD에 관한 것이다.Next, the present invention relates to an LCD having an interlayer insulating film for LCD.

본 발명에 있어서, (A) 가수분해 축합물이란, 상기 화합물 (1) 내지 (3)의 군에서 선택된 1종 이상의 실란 화합물의 가수분해 축합물이다.In the present invention, the (A) hydrolysis condensate is a hydrolysis condensate of at least one silane compound selected from the group of compounds (1) to (3).

여기에서 (A) 성분에서의 가수분해에서는 상기 (A) 성분을 구성하는 화합물 (1) 내지 (3)에 포함되는 R1O-기, R2O-기, R4O-기 및 R5O-기 모두가 가수분해되어 있을 필요는 없으며, 예를 들어 1개만 가수분해되어 있는 것, 2개 이상이 가수분해되어 있는 것, 또는 이들의 혼합물일 수 있다.In the hydrolysis in the component (A), the R 1 O-group, R 2 O-group, R 4 O-group, and R 5 contained in the compounds (1) to (3) constituting the component (A). It is not necessary that all of the O-groups be hydrolyzed, for example, only one is hydrolyzed, two or more are hydrolyzed, or a mixture thereof.

또한, (A) 성분에서의 축합이란, (A) 성분을 구성하는 화합물 (1) 내지 (3)의 가수분해물의 실란올기가 축합하여 Si-0-Si 결합을 형성하는 것인데, 본 발명에 서는 실란올기가 모두 축합되어 있을 필요는 없으며, 약간 일부의 실란올기가 축합된 것, 축합 정도가 다른 것의 혼합물 등을 포함한 개념이다. The condensation in the component (A) means that the silanol groups of the hydrolyzates of the compounds (1) to (3) constituting the component (A) condense to form a Si-0-Si bond. It is not necessary that all of the silanol groups be condensed, and the concept includes a mixture of some condensed silanol groups, a mixture of different degrees of condensation.

(A) 가수분해 축합물(A) hydrolysis condensate

(A) 가수분해 축합물은 상기 화합물 (1) 내지 (3)의 군에서 선택된 1종 이상의 실란 화합물을 촉매의 존재하에서 가수분해, 축합하여 얻을 수 있다.(A) The hydrolysis condensate can be obtained by hydrolyzing and condensing at least one silane compound selected from the group of the compounds (1) to (3) in the presence of a catalyst.

화합물 (1);Compound (1);

상기 화학식 1에 있어서, R 및 R1의 1가의 유기기로서는 알킬기, 아릴기, 알릴기, 글리시딜기 등을 들 수 있다. 또한, 화학식 1에 있어서, R은 1가의 유기기, 특히 알킬기 또는 페닐기인 것이 바람직하다.In the above formula (1), examples of the monovalent organic groups of R and R 1 include alkyl groups, aryl groups, allyl groups, glycidyl groups, and the like. In formula (1), R is preferably a monovalent organic group, particularly an alkyl group or a phenyl group.

여기에서, 알킬기로서는 메틸기, 에틸기, 프로필기, 부틸기 등을 들 수 있고, 바람직하게는 탄소수 1 내지 5이며, 이러한 알킬기는 쇄상일 수도, 분지되어 있을 수도 있으며, 수소 원자가 불소 원자 등에 더 치환될 수도 있다.Here, the alkyl group may be a methyl group, an ethyl group, a propyl group, a butyl group, or the like, and preferably has 1 to 5 carbon atoms. The alkyl group may be linear or branched, and the hydrogen atom may be further substituted. It may be.

화학식 1에 있어서, 아릴기로서는 페닐기, 나프틸기, 메틸페닐기, 에틸페닐기, 클로로페닐기, 브로모페닐기, 플루오로페닐기 등을 들 수 있다.In Formula (1), a phenyl group, a naphthyl group, a methylphenyl group, an ethylphenyl group, a chlorophenyl group, a bromophenyl group, a fluorophenyl group etc. are mentioned.

화학식 1로 표시되는 화합물의 구체예로서는, 트리메톡시실란, 트리에톡시실란, 트리-n-프로폭시실란, 트리-iso-프로폭시실란, 트리-n-부톡시실란, 트리-sec-부톡시실란, 트리-tert-부톡시실란, 트리페녹시실란, 플루오로 트리메톡시실란, 플루오로 트리에톡시실란, 플루오로 트리-n-프로폭시실란, 플루오로 트리-iso-프로폭시실란, 플루오로 트리-n-부톡시실란, 플루오로 트리-sec-부톡시실란, 플루오로 트 리-tert-부톡시실란, 플루오로 트리페녹시실란 등;Specific examples of the compound represented by the formula (1) include trimethoxysilane, triethoxysilane, tri-n-propoxysilane, tri-iso-propoxysilane, tri-n-butoxysilane, tri-sec-butoxy Silane, tri-tert-butoxysilane, triphenoxysilane, fluoro trimethoxysilane, fluoro triethoxysilane, fluoro tri-n-propoxysilane, fluoro tri-iso-propoxysilane, fluoro Low tri-n-butoxysilane, fluoro tri-sec-butoxysilane, fluoro tri-tert-butoxysilane, fluoro triphenoxysilane and the like;

메틸 트리메톡시실란, 메틸 트리에톡시실란, 메틸 트리-n-프로폭시실란, 메틸 트리-iso-프로폭시실란, 메틸 트리-n-부톡시실란, 메틸 트리-sec-부톡시실란, 메틸 트리-tert-부톡시실란, 메틸 트리페녹시실란, 에틸 트리메톡시실란, 에틸 트리에톡시실란, 에틸 트리-n-프로폭시실란, 에틸 트리-iso-프로폭시실란, 에틸 트리-n-부톡시실란, 에틸 트리-sec-부톡시실란, 에틸 트리-tert-부톡시실란, 에틸 트리페녹시실란, 비닐 트리메톡시실란, 비닐 트리에톡시실란, 비닐 트리-n-프로폭시실란, 비닐 트리-iso-프로폭시실란, 비닐 트리-n-부톡시실란, 비닐 트리-sec-부톡시실란, 비닐 트리-tert-부톡시실란, 비닐 트리페녹시실란, n-프로필 트리메톡시실란, n-프로필 트리에톡시실란, n-프로필 트리-n-프로폭시실란, n-프로필 트리-iso-프로폭시실란, n-프로필 트리-n-부톡시실란, n-프로필 트리-sec-부톡시실란, n-프로필 트리-tert-부톡시실란, n-프로필 트리페녹시실란, i-프로필 트리메톡시실란, i-프로필 트리에톡시실란, i-프로필 트리-n-프로폭시실란, i-프로필 트리-iso-프로폭시실란, i-프로필 트리-n-부톡시실란, i-프로필 트리-sec-부톡시실란, i-프로필 트리-tert-부톡시실란, i-프로필 트리페녹시실란, n-부틸 트리메톡시실란, n-부틸 트리에톡시실란, n-부틸 트리-n-프로폭시실란, n-부틸 트리-iso-프로폭시실란, n-부틸 트리-n-부톡시실란, n-부틸 트리-sec-부톡시실란, n-부틸 트리-tert-부톡시실란, n-부틸 트리페녹시실란, sec-부틸 트리메톡시실란, sec-부틸 트리에톡시실란, sec-부틸-트리-n-프로폭시실란, sec-부틸-트리-iso-프로폭시실란, sec-부틸-트리-n-부톡시실란, sec-부틸-트리-sec-부톡시실란, sec-부틸-트리-tert-부톡시실 란, sec-부틸-트리페녹시실란, t-부틸 트리메톡시실란, t-부틸 트리에톡시실란, t-부틸 트리-n-프로폭시실란, t-부틸 트리-iso-프로폭시실란, t-부틸 트리-n-부톡시실란, t-부틸 트리-sec-부톡시실란, t-부틸 트리-tert-부톡시실란, t-부틸 트리페녹시실란, 페닐 트리메톡시실란, 페닐 트리에톡시실란, 페닐 트리-n-프로폭시실란, 페닐 트리-iso-프로폭시실란, 페닐 트리-n-부톡시실란, 페닐 트리-sec-부톡시실란, 페닐 트리-tert-부톡시실란, 페닐 트리페녹시실란, 비닐 트리메톡시실란, 비닐 트리에톡시실란, γ-아미노프로필 트리메톡시실란, γ-아미노프로필 트리에톡시실란, γ-글리시독시프로필 트리메톡시실란, γ-글리시독시프로필 트리에톡시실란, γ-트리플로로프로필 트리메톡시실란, γ-트리플로로프로필 트리에톡시실란 등;Methyl trimethoxysilane, methyl triethoxysilane, methyl tri-n-propoxysilane, methyl tri-iso-propoxysilane, methyl tri-n-butoxysilane, methyl tri-sec-butoxysilane, methyl tri -tert-butoxysilane, methyl triphenoxysilane, ethyl trimethoxysilane, ethyl triethoxysilane, ethyl tri-n-propoxysilane, ethyl tri-iso-propoxysilane, ethyl tri-n-butoxy Silane, ethyl tri-sec-butoxysilane, ethyl tri-tert-butoxysilane, ethyl triphenoxysilane, vinyl trimethoxysilane, vinyl triethoxysilane, vinyl tri-n-propoxysilane, vinyl tri- iso-propoxysilane, vinyl tri-n-butoxysilane, vinyl tri-sec-butoxysilane, vinyl tri-tert-butoxysilane, vinyl triphenoxysilane, n-propyl trimethoxysilane, n-propyl Triethoxysilane, n-propyl tri-n-propoxysilane, n-propyl tri-iso-propoxysilane, n-propyl tri-n-butoxysilane, n- Lofil tri-sec-butoxysilane, n-propyl tri-tert-butoxysilane, n-propyl triphenoxysilane, i-propyl trimethoxysilane, i-propyl triethoxysilane, i-propyl tri-n -Propoxysilane, i-propyl tri-iso-propoxysilane, i-propyl tri-n-butoxysilane, i-propyl tri-sec-butoxysilane, i-propyl tri-tert-butoxysilane, i -Propyl triphenoxysilane, n-butyl trimethoxysilane, n-butyl triethoxysilane, n-butyl tri-n-propoxysilane, n-butyl tri-iso-propoxysilane, n-butyl tri- n-butoxysilane, n-butyl tri-sec-butoxysilane, n-butyl tri-tert-butoxysilane, n-butyl triphenoxysilane, sec-butyl trimethoxysilane, sec-butyl triethoxy Silane, sec-butyl-tri-n-propoxysilane, sec-butyl-tri-iso-propoxysilane, sec-butyl-tri-n-butoxysilane, sec-butyl-tri-sec-butoxysilane, sec-butyl-tri-tert-butoxysilane, sec-butyl-triphenoxysil Column, t-butyl trimethoxysilane, t-butyl triethoxysilane, t-butyl tri-n-propoxysilane, t-butyl tri-iso-propoxysilane, t-butyl tri-n-butoxysilane , t-butyl tri-sec-butoxysilane, t-butyl tri-tert-butoxysilane, t-butyl triphenoxysilane, phenyl trimethoxysilane, phenyl triethoxysilane, phenyl tri-n-propoxy Silane, phenyl tri-iso-propoxysilane, phenyl tri-n-butoxysilane, phenyl tri-sec-butoxysilane, phenyl tri-tert-butoxysilane, phenyl triphenoxysilane, vinyl trimethoxysilane, Vinyl triethoxysilane, γ-aminopropyl trimethoxysilane, γ-aminopropyl triethoxysilane, γ-glycidoxypropyl trimethoxysilane, γ-glycidoxypropyl triethoxysilane, γ-triflo Ropropyl trimethoxysilane, γ-trifluoropropyl triethoxysilane, and the like;

디메틸 디메톡시실란, 디메틸 디에톡시실란, 디메틸-디-n-프로폭시실란, 디메틸-디-iso-프로폭시실란, 디메틸-디-n-부톡시실란, 디메틸-디-sec-부톡시실란, 디메틸-디-tert-부톡시실란, 디메틸 디페녹시실란, 디에틸 디메톡시실란, 디에틸 디에톡시실란, 디에틸-디-n-프로폭시실란, 디에틸-디-iso-프로폭시실란, 디에틸- 디-n-부톡시실란, 디에틸-디-sec-부톡시실란, 디에틸-디-tert-부톡시실란, 디에틸 디페녹시실란, 디-n-프로필 디메톡시실란, 디-n-프로필 디에톡시실란, 디-n-프로필 -디-n-프로폭시실란, 디-n-프로필-디-iso-프로폭시실란, 디-n-프로필-디-n-부톡시실란, 디-n-프로필-디-sec-부톡시실란, 디-n-프로필-디-tert-부톡시실란, 디-n-프로필-디-페녹시실란, 디-iso-프로필 디메톡시실란, 디-iso-프로필 디에톡시실란, 디-iso-프로필-디-n-프로폭시실란, 디-iso-프로필-디-iso-프로폭시실란, 디-iso-프로필-디-n-부톡시실란, 디-iso-프로필-디-sec-부톡시실란, 디-iso-프로필-디-tert- 부톡시실란, 디-iso-프로필-디-페녹시실란, 디-n-부틸 디메톡시실란, 디-n-부틸 디에톡시실란, 디-n-부틸-디-n-프로폭시실란, 디-n-부틸-디-iso-프로폭시실란, 디-n-부틸-디-n-부톡시실란, 디-n-부틸-디-sec-부톡시실란, 디-n-부틸-디-tert-부톡시실란, 디-n-부틸-디-페녹시실란, 디-sec-부틸 디메톡시실란, 디-sec-부틸 디에톡시실란, 디-sec-부틸-디-n-프로폭시실란, 디-sec-부틸-디-iso-프로폭시실란, 디-sec-부틸-디-n-부톡시실란, 디-sec-부틸-디-sec-부톡시실란, 디-sec-부틸-디-tert-부톡시실란, 디-sec-부틸-디-페녹시실란, 디-tert-부틸 디메톡시실란, 디-tert-부틸 디에톡시실란, 디-tert-부틸-디-n-프로폭시실란, 디-tert-부틸-디-iso-프로폭시실란, 디-tert-부틸-디-n-부톡시실란, 디-tert-부틸-디-sec-부톡시실란, 디-tert-부틸-디 -tert-부톡시실란, 디-tert-부틸-디-페녹시실란, 디페닐 디메톡시실란, 디페닐-디-에톡시실란, 디페닐-디-n-프로폭시실란, 디페닐-디-iso-프로폭시실란, 디페닐-디- n-부톡시실란, 디페닐-디-sec-부톡시실란, 디페닐-디-tert-부톡시실란, 디페닐 디페녹시실란, 디비닐 트리메톡시실란 등을 들 수 있다.Dimethyl dimethoxysilane, dimethyl diethoxysilane, dimethyl-di-n-propoxysilane, dimethyl-di-iso-propoxysilane, dimethyl-di-n-butoxysilane, dimethyl-di-sec-butoxysilane, Dimethyl-di-tert-butoxysilane, dimethyl diphenoxysilane, diethyl dimethoxysilane, diethyl diethoxysilane, diethyl-di-n-propoxysilane, diethyl-di-iso-propoxysilane, Diethyl-di-n-butoxysilane, diethyl-di-sec-butoxysilane, diethyl-di-tert-butoxysilane, diethyl diphenoxysilane, di-n-propyl dimethoxysilane, di -n-propyl diethoxysilane, di-n-propyl-di-n-propoxysilane, di-n-propyl-di-iso-propoxysilane, di-n-propyl-di-n-butoxysilane, Di-n-propyl-di-sec-butoxysilane, di-n-propyl-di-tert-butoxysilane, di-n-propyl-di-phenoxysilane, di-iso-propyl dimethoxysilane, di -iso-propyl diethoxysilane, di-iso-propyl-di-n-propoxysilane, di-iso-propyl-di-iso -Propoxysilane, di-iso-propyl-di-n-butoxysilane, di-iso-propyl-di-sec-butoxysilane, di-iso-propyl-di-tert-butoxysilane, di-iso -Propyl-di-phenoxysilane, di-n-butyl dimethoxysilane, di-n-butyl diethoxysilane, di-n-butyl-di-n-propoxysilane, di-n-butyl-di-iso -Propoxysilane, di-n-butyl-di-n-butoxysilane, di-n-butyl-di-sec-butoxysilane, di-n-butyl-di-tert-butoxysilane, di-n -Butyl-di-phenoxysilane, di-sec-butyl dimethoxysilane, di-sec-butyl diethoxysilane, di-sec-butyl-di-n-propoxysilane, di-sec-butyl-di-iso -Propoxysilane, di-sec-butyl-di-n-butoxysilane, di-sec-butyl-di-sec-butoxysilane, di-sec-butyl-di-tert-butoxysilane, di-sec -Butyl-di-phenoxysilane, di-tert-butyl dimethoxysilane, di-tert-butyl diethoxysilane, di-tert-butyl-di-n-propoxysilane, di-tert-butyl-di-iso -Propoxysilane, di-tert-butyl-di-n-butoxysilane, di-tert-part Tyl-di-sec-butoxysilane, di-tert-butyl-di-tert-butoxysilane, di-tert-butyl-di-phenoxysilane, diphenyl dimethoxysilane, diphenyl-di-ethoxysilane , Diphenyl-di-n-propoxysilane, diphenyl-di-iso-propoxysilane, diphenyl-di-n-butoxysilane, diphenyl-di-sec-butoxysilane, diphenyl-di- tert-butoxysilane, diphenyl diphenoxysilane, divinyl trimethoxysilane, etc. are mentioned.

화합물 (1)로서 바람직한 화합물은 메틸 트리메톡시실란, 메틸 트리에톡시실란, 메틸 트리-n-프로폭시실란, 메틸 트리-iso-프로폭시실란, 에틸 트리메톡시실란, 에틸 트리에톡시실란, 비닐 트리메톡시실란, 비닐 트리에톡시실란, 페닐 트리메톡시실란, 페닐 트리에톡시실란, 디메틸 디메톡시실란, 디메틸 디에톡시실란, 디에틸 디메톡시실란, 디에틸 디에톡시실란, 디페닐 디메톡시실란, 디페닐 디에톡시실란 등이다.Preferred compounds as compound (1) include methyl trimethoxysilane, methyl triethoxysilane, methyl tri-n-propoxysilane, methyl tri-iso-propoxysilane, ethyl trimethoxysilane, ethyl triethoxysilane, Vinyl trimethoxysilane, vinyl triethoxysilane, phenyl trimethoxysilane, phenyl triethoxysilane, dimethyl dimethoxysilane, dimethyl diethoxysilane, diethyl dimethoxysilane, diethyl diethoxysilane, diphenyl dimethoxy Silane, diphenyl diethoxysilane and the like.

이들은 1종 또는 2종 이상을 동시에 사용할 수도 있다. These can also use 1 type (s) or 2 or more types simultaneously.                     

화합물 (2); Compound (2);

상기 화학식 2에 있어서, R2로 표시되는 1가의 유기기로서는 상술한 화학식 1과 동일한 유기기를 들 수 있다.In the above formula (2), examples of the monovalent organic group represented by R 2 include the same organic groups as those of the above formula (1).

화학식 2로 표시되는 화합물의 구체예로서는 테트라메톡시실란, 테트라에톡시실란, 테트라-n-프로폭시실란, 테트라-iso-프로폭시실란, 테트라-n-부톡시실란, 테트라-sec-부톡시실란, 테트라-tert-부톡시실란, 테트라페녹시실란 등을 들 수 있다.Specific examples of the compound represented by the formula (2) include tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-iso-propoxysilane, tetra-n-butoxysilane, tetra-sec-butoxysilane , Tetra-tert-butoxysilane, tetraphenoxysilane, and the like.

화합물 (3);Compound (3);

상기 화학식 3에 있어서, R3 내지 R6으로 표시되는 1가의 유기기로서는 상술한 화학식 1과 동일한 유기기를 들 수 있다.In the above formula (3), examples of the monovalent organic group represented by R 3 to R 6 include the same organic groups as those of the above formula (1).

화학식 3 중, R7이 산소 원자인 화합물로서는 헥사메톡시디실록산, 헥사에톡시디실록산, 헥사페녹시디실록산, 1,1,1,3,3-펜타메톡시-3-메틸디실록산, 1,1,1,3, ,3-펜타에톡시-3-메틸디실록산, 1,1,1,3,3-펜타페녹시-3-메틸디실록산, 1,1,1,3,3-펜타메톡시-3-에틸디실록산, 1,1,1,3,3-펜타에톡시-3-에틸디실록산, 1,1,1,3,3-펜타페녹시-3-에틸디실록산, 1,1,1,3,3-펜타메톡시-3-페닐디실록산, 1,1,1,3,3-펜타에톡시-3-페닐디실록산, 1,1,1,3,3-펜타페녹시-3-페닐디실록산, 1,1,3,3-테트라메톡시-1,3-디메틸디실록산, 1,1,3,3-테트라에톡시-1,3-디메틸디실록산, 1,1,3,3-테트라페녹시-1,3-디메틸디실록산, 1,1,3,3-테트라메톡시-1,3-디에틸디실록산, 1,1,3,3 -테트라에톡시-1,3-디에틸디실록산, 1,1,3,3-테트라페녹시-1,3-디에틸디실 록산, 1,1,3,3-테트라메톡시-1,3-디페닐디실록산, 1,1,3,3-테트라에톡시-1,3-디페닐디실록산, 1,1,3,3-테트라페녹시-1,3-디페닐디실록산, 1,1,3-트리메톡시-1,3,3-트리메틸디실록산, 1,1,3-트리에톡시-1,3,3-트리메틸디실록산, 1,1,3-트리페녹시-1,3,3-트리메틸디실록산, 1,1,3-트리메톡시-1,3,3-트리에틸디실록산, 1,1,3-트리에톡시-1,3,3-트리에틸디실록산, 1,1,3-트리페녹시-1,3,3-트리에틸디실록산, 1,1,3-트리메톡시-1,3,3-트리페닐디실록산, 1,1,3-트리에톡시-1,3,3-트리페닐디실록산, 1,1,3-트리페녹시-1,3,3-트리페닐디실록산, 1,3-디메톡시-1,1,3,3-테트라메틸디실록산, 1,3-디에톡시-1,1,3,3-테트라메틸디실록산, 1,3-디페녹시-1,1,3,3-테트라메틸디실록산, 1,3-디메톡시-1,1,3,3-테트라에틸디실록산, 1,3-디에톡시-1,1,3,3-테트라에틸디실록산, 1,3-디페녹시-1,1,3,3-테트라에틸디실록산, 1,3-디메톡시-1,1,3,3-테트라페닐디실록산, 1,3-디에톡시-1,1,3,3-테트라페닐디실록산, 1,3-디페녹시-1,1,3,3-테트라페닐디실록산 등을 들 수 있다.In the formula (3), examples of the compound in which R 7 is an oxygen atom include hexamethoxydisiloxane, hexaethoxydisiloxane, hexaphenoxydisiloxane, 1,1,1,3,3-pentamethoxy-3-methyldisiloxane, 1, 1,1,3,, 3-pentaethoxy-3-methyldisiloxane, 1,1,1,3,3-pentaphenoxy-3-methyldisiloxane, 1,1,1,3,3-penta Methoxy-3-ethyldisiloxane, 1,1,1,3,3-pentaethoxy-3-ethyldisiloxane, 1,1,1,3,3-pentaphenoxy-3-ethyldisiloxane, 1 , 1,1,3,3-pentamethoxy-3-phenyldisiloxane, 1,1,1,3,3-pentaethoxy-3-phenyldisiloxane, 1,1,1,3,3-penta Phenoxy-3-phenyldisiloxane, 1,1,3,3-tetramethoxy-1,3-dimethyldisiloxane, 1,1,3,3-tetraethoxy-1,3-dimethyldisiloxane, 1 , 1,3,3-tetraphenoxy-1,3-dimethyldisiloxane, 1,1,3,3-tetramethoxy-1,3-diethyldisiloxane, 1,1,3,3-tetrae Oxy-1,3-diethyldisiloxane, 1,1,3,3-tetraphenoxy-1,3-diethyldisiloxane, 1,1,3,3-tetramethoxy-1,3-diphenyl Disiloxane, 1,1,3,3-tetraethoxy-1,3-dipe Disiloxane, 1,1,3,3-tetraphenoxy-1,3-diphenyldisiloxane, 1,1,3-trimethoxy-1,3,3-trimethyldisiloxane, 1,1,3- Triethoxy-1,3,3-trimethyldisiloxane, 1,1,3-triphenoxy-1,3,3-trimethyldisiloxane, 1,1,3-trimethoxy-1,3,3- Triethyldisiloxane, 1,1,3-triethoxy-1,3,3-triethyldisiloxane, 1,1,3-triphenoxy-1,3,3-triethyldisiloxane, 1,1 , 3-trimethoxy-1,3,3-triphenyldisiloxane, 1,1,3-triethoxy-1,3,3-triphenyldisiloxane, 1,1,3-triphenoxy-1 , 3,3-triphenyldisiloxane, 1,3-dimethoxy-1,1,3,3-tetramethyldisiloxane, 1,3-diethoxy-1,1,3,3-tetramethyldisiloxane, 1,3-diphenoxy-1,1,3,3-tetramethyldisiloxane, 1,3-dimethoxy-1,1,3,3-tetraethyldisiloxane, 1,3-diethoxy-1, 1,3,3-tetraethyldisiloxane, 1,3-diphenoxy-1,1,3,3-tetraethyldisiloxane, 1,3-dimethoxy-1,1,3,3-tetraphenyldi Siloxane, 1,3-diethoxy-1,1,3,3-tetraphenyldisiloxane, 1,3-dipe When 1,1,3,3 and the like tetraphenyl-disiloxane.

이들 중, 헥사메톡시디실록산, 헥사에톡시디실록산, 1,1,3,3-테트라메톡시-1,3-디메틸디실록산, 1,1,3,3-테트라에톡시-1,3-디메틸디실록산, 1,1,3,3-테트라메톡시-1,3-디페닐디실록산, 1,3-디메톡시-1,1,3,3-테트라메틸디실록산, 1,3-디에톡시-1,1,3,3-테트라메틸디실록산, 1,3-디메톡시-1,1,3,3-테트라페닐디실록산, 1,3-디에톡시-1,1,3,3-테트라페닐디실록산 등을 바람직한 예로서 들 수 있다.Among them, hexamethoxy disiloxane, hexaethoxy disiloxane, 1,1,3,3-tetramethoxy-1,3-dimethyldisiloxane, 1,1,3,3-tetraethoxy-1,3- Dimethyldisiloxane, 1,1,3,3-tetramethoxy-1,3-diphenyldisiloxane, 1,3-dimethoxy-1,1,3,3-tetramethyldisiloxane, 1,3-die Oxy-1,1,3,3-tetramethyldisiloxane, 1,3-dimethoxy-1,1,3,3-tetraphenyldisiloxane, 1,3-diethoxy-1,1,3,3- Tetraphenyldisiloxane etc. are mentioned as a preferable example.

또한, 화학식 3에 있어서, d가 0인 화합물로서는 헥사메톡시디실란, 헥사에톡시디실란, 헥사페녹시디실란, 1,1,1,2,2-펜타메톡시-2-메틸디실란, 1,1,1,2,2-펜타에톡시-2-메틸디실란, 1,1,1,2,2-펜타페녹시-2-메틸디실란, 1,1,1,2,2-펜타메톡 시-2-에틸디실란, 1,1,1,2,2-펜타에톡시-2-에틸디실란, 1,1,1,2,2-펜타페녹시-2-에틸디실란, 1,1,1,2,2-펜타메톡시-2-페닐디실란, 1,1,1,2,2-펜타에톡시-2-페닐디실란, 1,1,1,2,2-펜타페녹시-2-페닐디실란, 1,1,2,2-테트라메톡시-1,2-디메틸디실란, 1,1,2,2-테트라에톡시-1,2-디메틸디실란, 1,1,2,2-테트라페녹시-1,2-디메틸디실란, 1,1,2,2-테트라메톡시-1,2-디에틸디실란, 1,1,2,2-테트라에톡시-1,2-디에틸디실란, 1,1,2,2-테트라페녹시-1,2-디에틸디실란, 1,1,2,2-테트라메톡시-1,2-디페닐디실란, 1,1,2,2-테트라에톡시-1,2-디페닐디실란, 1,1,2,2-테트라페녹시-1,2-디페닐디실란, 1,1,2-트리메톡시-1,2,2-트리메틸디실란, 1,1,2-트리에톡시-1,2,2-트리메틸디실란, 1,1,2-트리페녹시-1,2,2-트리메틸디실란, 1,1,2-트리메톡시-1,2,2-트리에틸디실란, 1,1,2-트리에톡시-1,2,2-트리에틸디실란, 1,1,2-트리페녹시-1,2,2-트리에틸디실란, 1,1,2-트리메톡시-1,2,2-트리페닐디실란, 1,1,2-트리에톡시-1,2,2-트리페닐디실란, 1,1,2-트리페녹시-1,2,2-트리페닐디실란, 1,2-디메톡시-1,1,2,2-테트라메틸디실란, 1,2-디에톡시-1,1,2,2-테트라메틸디실란, 1,2-디페녹시-1,1,2,2-테트라메틸디실란, 1,2-디메톡시-1,1,2,2-테트라에틸디실란, 1,2-디에톡시-1,1,2,2-테트라에틸디실란, 1,2-디페녹시-1,1,2,2-테트라에틸디실란, 1,2-디메톡시-1,1,2,2-테트라페닐디실란, 1,2-디에톡시-1,1,2,2-테트라페닐디실란, 1,2-디페녹시-1,1,2,2-테트라페닐디실란 등을 들 수 있다.In addition, in the formula (3), as the compound whose d is 0, hexamethoxydisilane, hexaethoxydisilane, hexaphenoxydisilane, 1,1,1,2,2-pentamethoxy-2-methyldisilane, 1 , 1,1,2,2-pentaethoxy-2-methyldisilane, 1,1,1,2,2-pentaphenoxy-2-methyldisilane, 1,1,1,2,2-penta Methoxy-2-ethyldisilane, 1,1,1,2,2-pentaethoxy-2-ethyldisilane, 1,1,1,2,2-pentaphenoxy-2-ethyldisilane, 1 , 1,1,2,2-pentamethoxy-2-phenyldisilane, 1,1,1,2,2-pentaethoxy-2-phenyldisilane, 1,1,1,2,2-penta Phenoxy-2-phenyldisilane, 1,1,2,2-tetramethoxy-1,2-dimethyldisilane, 1,1,2,2-tetraethoxy-1,2-dimethyldisilane, 1 , 1,2,2-tetraphenoxy-1,2-dimethyldisilane, 1,1,2,2-tetramethoxy-1,2-diethyldisilane, 1,1,2,2-tetrae Methoxy-1,2-diethyldisilane, 1,1,2,2-tetraphenoxy-1,2-diethyldisilane, 1,1,2,2-tetramethoxy-1,2-diphenyl Disilane, 1,1,2,2-tetraethoxy-1,2-diphenyldisilane, 1,1,2,2-tetraphenoxy-1,2-diphenyl Silane, 1,1,2-trimethoxy-1,2,2-trimethyldisilane, 1,1,2-triethoxy-1,2,2-trimethyldisilane, 1,1,2-triphenoxy C-1,2,2-trimethyldisilane, 1,1,2-trimethoxy-1,2,2-triethyldisilane, 1,1,2-triethoxy-1,2,2-tri Ethyldisilane, 1,1,2-triphenoxy-1,2,2-triethyldisilane, 1,1,2-trimethoxy-1,2,2-triphenyldisilane, 1,1, 2-triethoxy-1,2,2-triphenyldisilane, 1,1,2-triphenoxy-1,2,2-triphenyldisilane, 1,2-dimethoxy-1,1,2 , 2-tetramethyldisilane, 1,2-diethoxy-1,1,2,2-tetramethyldisilane, 1,2-diphenoxy-1,1,2,2-tetramethyldisilane, 1 , 2-dimethoxy-1,1,2,2-tetraethyldisilane, 1,2-diethoxy-1,1,2,2-tetraethyldisilane, 1,2-diphenoxy-1,1 , 2,2-tetraethyldisilane, 1,2-dimethoxy-1,1,2,2-tetraphenyldisilane, 1,2-diethoxy-1,1,2,2-tetraphenyldisilane, 1,2-diphenoxy-1,1,2,2-tetraphenyldisilane, etc. are mentioned.

이들 중, 헥사메톡시디실란, 헥사에톡시디실란, 1,1,2,2-테트라메톡시-1,2-디메틸디실란, 1,1,2,2-테트라에톡시-1,2-디메틸디실란, 1,1,2,2-테트라메톡시-1,2-디페닐디실란, 1,2-디메톡시-1,1,2,2-테트라메틸디실란, 1,2-디에톡시-1,1,2,2 -테트라메틸디실란, 1,2-디메톡시-1,1,2,2-테트라페닐디실란, 1,2-디에톡시-1,1,2, 2-테트라페닐디실란 등을 바람직한 예로서 들 수 있다. Among them, hexamethoxydisilane, hexaethoxydisilane, 1,1,2,2-tetramethoxy-1,2-dimethyldisilane, 1,1,2,2-tetraethoxy-1,2- Dimethyldisilane, 1,1,2,2-tetramethoxy-1,2-diphenyldisilane, 1,2-dimethoxy-1,1,2,2-tetramethyldisilane, 1,2-die Oxy-1,1,2,2-tetramethyldisilane, 1,2-dimethoxy-1,1,2,2-tetraphenyldisilane, 1,2-diethoxy-1,1,2,2- Tetraphenyldisilane etc. are mentioned as a preferable example.

또한, 화학식 3에 있어서, R7이 -(CH2)n-으로 표시되는 기의 화합물로서는, 비스(트리메톡시실릴)메탄, 비스(트리에톡시실릴)메탄, 비스(트리-n-프로폭시실릴)메탄, 비스(트리-i-프로폭시실릴)메탄, 비스(트리-n-부톡시실릴)메탄, 비스(트리-sec-부톡시실릴)메탄, 비스(트리-t-부톡시실릴)메탄, 1,2-비스(트리메톡시실릴)에탄, 1,2-비스(트리에톡시실릴)에탄, 1,2-비스(트리-n-프로폭시실릴)에탄, 1,2-비스 (트리-i-프로폭시실릴)에탄, 1,2-비스(트리-n-부톡시실릴)에탄, 1,2-비스(트리-sec -부톡시실릴)에탄, 1,2-비스(트리-t-부톡시실릴)에탄, 1-(디메톡시메틸실릴)-1-(트리메톡시실릴)메탄, 1-(디에톡시메틸실릴)-1-(트리에톡시실릴)메탄, 1-(디-n-프로폭시메틸실릴)-1-(트리-n-프로폭시실릴)메탄, 1-(디-i-프로폭시메틸실릴)-1-(트리-i-프로폭시실릴)메탄, 1-(디-n-부톡시메틸실릴)-1-(트리-n-부톡시실릴)메탄, 1-(디 -sec-부톡시메틸실릴)-1-(트리-sec-부톡시실릴)메탄, 1-(디-t-부톡시메틸실릴)-1- (트리-t-부톡시실릴)메탄, 1-(디메톡시메틸실릴)-2-(트리메톡시실릴)에탄, 1-(디에톡시메틸실릴)-2-(트리에톡시실릴)에탄, 1-(디-n-프로폭시메틸실릴)-2-(트리-n-프로폭시실릴)에탄, 1-(디-i-프로폭시메틸실릴)-2-(트리-i-프로폭시실릴)에탄, 1-(디 -n-부톡시메틸실릴)-2-(트리-n-부톡시실릴)에탄, 1-(디-sec-부톡시메틸실릴)-2-(트리-sec-부톡시실릴)에탄, 1-(디-t-부톡시메틸실릴)-2-(트리-t-부톡시실릴)에탄, 비스(디메톡시메틸실릴)메탄, 비스(디에톡시메틸실릴)메탄, 비스(디-n-프로폭시메틸 실릴)메탄, 비스(디-i-프로폭시메틸실릴)메탄, 비스(디-n-부톡시메틸실릴)메탄, 비스(디-sec-부톡시메틸실릴)메탄, 비스(디-t-부톡시메틸실릴)메탄, 1,2-비스(디메톡시메틸실릴)에탄, 1,2-비스(디에톡시메틸실릴)에탄, 1,2-비스(디-n-프로폭시메틸실릴)에탄, 1,2-비스(디-i-프로폭시메틸실릴)에탄, 1,2-비스(디-n-부톡시메틸실릴)에탄, 1,2-비스(디-sec-부톡시메틸실릴)에탄, 1,2-비스(디-t-부톡시메틸실릴)에탄, 1,2-비스(트리메톡시실릴)벤젠, 1,2-비스(트리에톡시실릴)벤젠, 1,2-비스(트리-n-프로폭시실릴)벤젠, 1,2-비스(트리-i-프로폭시실릴)벤젠, 1,2-비스(트리-n-부톡시실릴)벤젠, 1,2-비스(트리-sec-부톡시실릴)벤젠, 1,2-비스(트리-t-부톡시실릴)벤젠, 1,3-비스(트리메톡시실릴)벤젠, 1,3-비스(트리에톡시실릴)벤젠, 1,3-비스(트리 -n-프로폭시실릴)벤젠, 1,3-비스(트리-i-프로폭시실릴)벤젠, 1,3-비스(트리-n-부톡시실릴)벤젠, 1,3-비스(트리-sec-부톡시실릴)벤젠, 1,3-비스(트리-t-부톡시실릴)벤젠, 1,4-비스(트리메톡시실릴)벤젠, 1,4-비스(트리에톡시실릴)벤젠, 1,4-비스(트리 -n-프로폭시실릴)벤젠, 1,4-비스(트리-i-프로폭시실릴)벤젠, 1,4-비스(트리-n-부톡시실릴)벤젠, 1,4-비스(트리-sec-부톡시실릴)벤젠, 1,4-비스(트리-t-부톡시실릴)벤젠 등을 들 수 있다.In addition, in the formula (3), examples of the compound of the group in which R 7 is represented by-(CH 2 ) n -include bis (trimethoxysilyl) methane, bis (triethoxysilyl) methane and bis (tri-n-pro Foxysilyl) methane, bis (tri-i-propoxysilyl) methane, bis (tri-n-butoxysilyl) methane, bis (tri-sec-butoxysilyl) methane, bis (tri-t-butoxysilyl Methane, 1,2-bis (trimethoxysilyl) ethane, 1,2-bis (triethoxysilyl) ethane, 1,2-bis (tri-n-propoxysilyl) ethane, 1,2-bis (Tri-i-propoxysilyl) ethane, 1,2-bis (tri-n-butoxysilyl) ethane, 1,2-bis (tri-sec-butoxysilyl) ethane, 1,2-bis (tri -t-butoxysilyl) ethane, 1- (dimethoxymethylsilyl) -1- (trimethoxysilyl) methane, 1- (diethoxymethylsilyl) -1- (triethoxysilyl) methane, 1- ( Di-n-propoxymethylsilyl) -1- (tri-n-propoxysilyl) methane, 1- (di-i-propoxymethylsilyl) -1- (tri-i-propoxysilyl) methane, 1 -(Di-n-butoxymethylsilyl) -1 -(Tri-n-butoxysilyl) methane, 1- (di-sec-butoxymethylsilyl) -1- (tri-sec-butoxysilyl) methane, 1- (di-t-butoxymethylsilyl) -1- (tri-t-butoxysilyl) methane, 1- (dimethoxymethylsilyl) -2- (trimethoxysilyl) ethane, 1- (diethoxymethylsilyl) -2- (triethoxysilyl) Ethane, 1- (di-n-propoxymethylsilyl) -2- (tri-n-propoxysilyl) ethane, 1- (di-i-propoxymethylsilyl) -2- (tri-i-propoxy Silyl) ethane, 1- (di-n-butoxymethylsilyl) -2- (tri-n-butoxysilyl) ethane, 1- (di-sec-butoxymethylsilyl) -2- (tri-sec- Butoxysilyl) ethane, 1- (di-t-butoxymethylsilyl) -2- (tri-t-butoxysilyl) ethane, bis (dimethoxymethylsilyl) methane, bis (diethoxymethylsilyl) methane, Bis (di-n-propoxymethyl silyl) methane, bis (di-i-propoxymethylsilyl) methane, bis (di-n-butoxymethylsilyl) methane, bis (di-sec-butoxymethylsilyl) Methane, bis (di-t-butoxymethylsilyl) methane, 1,2-bis (dimethoxymethylsilyl) Ethane, 1,2-bis (diethoxymethylsilyl) ethane, 1,2-bis (di-n-propoxymethylsilyl) ethane, 1,2-bis (di-i-propoxymethylsilyl) ethane, 1 , 2-bis (di-n-butoxymethylsilyl) ethane, 1,2-bis (di-sec-butoxymethylsilyl) ethane, 1,2-bis (di-t-butoxymethylsilyl) ethane, 1,2-bis (trimethoxysilyl) benzene, 1,2-bis (triethoxysilyl) benzene, 1,2-bis (tri-n-propoxysilyl) benzene, 1,2-bis (tri- i-propoxysilyl) benzene, 1,2-bis (tri-n-butoxysilyl) benzene, 1,2-bis (tri-sec-butoxysilyl) benzene, 1,2-bis (tri-t- Butoxysilyl) benzene, 1,3-bis (trimethoxysilyl) benzene, 1,3-bis (triethoxysilyl) benzene, 1,3-bis (tri-n-propoxysilyl) benzene, 1, 3-bis (tri-i-propoxysilyl) benzene, 1,3-bis (tri-n-butoxysilyl) benzene, 1,3-bis (tri-sec-butoxysilyl) benzene, 1,3- Bis (tri-t-butoxysilyl) benzene, 1,4-bis (trimethoxysilyl) benzene, 1,4-bis (triethoxysilyl) benzene, 1,4- Bis (tri-n-propoxysilyl) benzene, 1,4-bis (tri-i-propoxysilyl) benzene, 1,4-bis (tri-n-butoxysilyl) benzene, 1,4-bis ( Tri-sec-butoxysilyl) benzene, 1,4-bis (tri-t-butoxysilyl) benzene, and the like.

이들 중, 비스(트리메톡시실릴)메탄, 비스(트리에톡시실릴)메탄, 1,2-비스(트리메톡시실릴)에탄, 1,2-비스(트리에톡시실릴)에탄, 1-(디메톡시메틸실릴)-1-(트리메톡시실릴)메탄, 1-(디에톡시메틸실릴)-1-(트리에톡시실릴)메탄, 1-(디메톡시메틸실릴)-2-(트리메톡시실릴)에탄, 1-(디에톡시메틸실릴)-2-(트리에톡시실릴)에탄, 비스(디메톡시메틸실릴)메탄, 비스(디에톡시메틸실릴)메탄, 1,2-비스(디메톡시메틸 실릴)에탄, 1,2-비스(디에톡시메틸실릴)에탄, 1,2-비스(트리메톡시실릴)벤젠, 1,2-비스(트리에톡시실릴)벤젠, 1,3-비스(트리메톡시실릴)벤젠, 1,3-비스(트리에톡시실릴)벤젠, 1,4-비스(트리메톡시실릴)벤젠, 1,4-비스(트리에톡시실릴)벤젠 등을 바람직한 예로서 들 수 있다.Among them, bis (trimethoxysilyl) methane, bis (triethoxysilyl) methane, 1,2-bis (trimethoxysilyl) ethane, 1,2-bis (triethoxysilyl) ethane, 1- ( Dimethoxymethylsilyl) -1- (trimethoxysilyl) methane, 1- (diethoxymethylsilyl) -1- (triethoxysilyl) methane, 1- (dimethoxymethylsilyl) -2- (trimethoxy Silyl) ethane, 1- (diethoxymethylsilyl) -2- (triethoxysilyl) ethane, bis (dimethoxymethylsilyl) methane, bis (diethoxymethylsilyl) methane, 1,2-bis (dimethoxymethyl Silyl) ethane, 1,2-bis (diethoxymethylsilyl) ethane, 1,2-bis (trimethoxysilyl) benzene, 1,2-bis (triethoxysilyl) benzene, 1,3-bis (tri Methoxysilyl) benzene, 1,3-bis (triethoxysilyl) benzene, 1,4-bis (trimethoxysilyl) benzene, 1,4-bis (triethoxysilyl) benzene, and the like are preferable examples. Can be.

본 발명에 있어서, 화합물 (1) 내지 (3)은 1종 또는 2종 이상을 사용할 수 있다.In the present invention, the compounds (1) to (3) may be used alone or in combination of two or more.

또한, 상기 화합물 (1) 내지 (3)의 군에서 선택된 1종 이상의 실란 화합물을 가수분해, 축합시킬 때, 화합물 (1) 내지 (3) 1 몰 당 0.5 몰 초과 150 몰 이하의 물을 사용하는 것이 바람직하고, 0.5 몰 초과 130 몰의 물을 첨가하는 것이 특히 바람직하다.In addition, when hydrolyzing and condensing at least one silane compound selected from the group of the compounds (1) to (3), more than 0.5 moles and no more than 150 moles of water per mole of the compounds (1) to (3) Preference is given to adding more than 0.5 moles to 130 moles of water.

본 발명의 (A) 가수분해 축합물을 제조함에 있어서는, 상기 화합물 (1) 내지 (3)의 군에서 선택된 1종 이상의 실란 화합물을 가수분해, 결합시킬 때 촉매를 사용하는 것이 특징이다. In preparing the hydrolysis-condensation product of the present invention (A), it is characterized by using a catalyst when hydrolyzing and combining at least one silane compound selected from the group of compounds (1) to (3).

이 때 사용할 수 있는 촉매로서는 알칼리 촉매가 바람직하다.As a catalyst which can be used at this time, an alkali catalyst is preferable.

이러한 알칼리 촉매로서는, 예를 들면 수산화나트륨, 수산화칼륨, 수산화리튬, 피리딘, 피롤, 피페라진, 피롤리딘, 피페리딘, 피콜린, 모노에탄올아민, 디에탄올아민, 디메틸 모노에탄올아민, 모노메틸 디에탄올아민, 트리에탄올아민, 디아자비시클로옥탄, 디아자비시클로노난, 디아자비시클로운데센, 테트라메틸암모늄히드록시드, 테트라에틸암모늄히드록시드, 테트라프로필암모늄히드록시드, 테트라부틸암모늄히드록시드, 암모니아, 메틸아민, 에틸아민, 프로필아민, 부틸아민, 펜틸 아민, 헥실아민, 펜틸아민, 옥틸아민, 노닐아민, 데실아민, N,N-디메틸아민, N,N-디에틸아민, N,N-디프로필아민, N,N-디부틸아민, 트리메틸아민, 트리에틸아민, 트리프로필아민, 트리부틸아민, 시클로헥실아민, 트리메틸이미딘, 1-아미노-3-메틸부탄, 디메틸글리신, 3-아미노-3-메틸아민 등을 들 수 있으며, 유기 아민이 보다 바람직하고, 암모니아, 알킬아민 및 테트라알킬암모늄히드록시드가 도포막의 기판에 대한 밀착성의 점에서 특히 바람직하다.As such an alkali catalyst, for example, sodium hydroxide, potassium hydroxide, lithium hydroxide, pyridine, pyrrole, piperazine, pyrrolidine, piperidine, picoline, monoethanolamine, diethanolamine, dimethyl monoethanolamine, monomethyl Diethanolamine, triethanolamine, diazabicyclooctane, diazabicyclononane, diazabicycloundecene, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide , Ammonia, methylamine, ethylamine, propylamine, butylamine, pentyl amine, hexylamine, pentylamine, octylamine, nonylamine, decylamine, N, N-dimethylamine, N, N-diethylamine, N, N-dipropylamine, N, N-dibutylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, cyclohexylamine, trimethylimidine, 1-amino-3-methylbutane, dimethylglycine, 3 -Amino- 3-methylamine etc. are mentioned, Organic amine is more preferable, Ammonia, alkylamine, and tetraalkylammonium hydroxide are especially preferable at the point of adhesiveness with respect to the board | substrate of a coating film.

이들 알칼리 촉매는 1종 또는 2종 이상을 동시에 사용할 수도 있다.These alkali catalysts can also use 1 type (s) or 2 or more types simultaneously.

또한, 본 발명의 효과를 손상하지 않는 범위에서 다른 촉매를 사용하거나, 또는 다른 촉매로 얻어진 가수분해 축합물을 블렌드할 수도 있다.It is also possible to use other catalysts or blend the hydrolytic condensates obtained with other catalysts within the scope of not impairing the effects of the present invention.

이러한 다른 촉매로서는 금속 킬레이트 화합물, 산 촉매를 들 수 있다.Examples of such other catalysts include metal chelate compounds and acid catalysts.

금속 킬레이트 화합물로서는, 예를 들면 트리에톡시·모노(아세틸아세토네이토)티탄, 트리-n-프로폭시·모노(아세틸아세토네이토)티탄, 트리-i-프로폭시·모노 (아세틸아세토네이토)티탄, 트리-n-부톡시·모노(아세틸아세토네이토)티탄, 트리-sec-부톡시·모노(아세틸아세토네이토)티탄, 트리-t-부톡시·모노(아세틸아세토네이토)티탄, 디에톡시·비스(아세틸아세토네이토)티탄, 디-n-프로폭시·비스(아세틸아세토네이토)티탄, 디-i-프로폭시·비스(아세틸아세토네이토)티탄, 디-n-부톡시·비스(아세틸아세토네이토)티탄, 디-sec-부톡시·비스(아세틸아세토네이토)티탄, 디-t-부톡시·비스(아세틸아세토네이토)티탄, 모노에톡시·트리스(아세틸아세토네이토)티탄, 모노-n-프로폭시·트리스(아세틸아세토네이토)티탄, 모노-i-프로폭시·트리스(아세틸아세토네이토)티탄, 모노-n-부톡시·트리스(아세틸아세토네이토)티 탄, 모노-sec-부톡시·트리스(아세틸아세토네이토)티탄, 모노-t-부톡시·트리스(아세틸아세토네이토)티탄, 테트라키스(아세틸아세토네이토)티탄, 트리에톡시·모노(에틸아세토아세테이트)티탄, 트리-n-프로폭시·모노(에틸아세토아세테이트)티탄, 트리-i-프로폭시·모노(에틸아세토아세테이트)티탄, 트리-n-부톡시·모노(에틸아세토아세테이트)티탄, 트리-sec-부톡시·모노(에틸아세토아세테이트)티탄, 트리-t-부톡시·모노(에틸아세토아세테이트)티탄, 디에톡시·비스(에틸아세토아세테이트)티탄, 디-n-프로폭시·비스(에틸아세토아세테이트)티탄, 디-i-프로폭시·비스(에틸아세토아세테이트)티탄, 디-n-부톡시·비스(에틸아세토아세테이트)티탄, 디-sec-부톡시·비스(에틸아세토아세테이트)티탄, 디-t-부톡시·비스(에틸아세토아세테이트)티탄, 모노에톡시·트리스(에틸아세토아세테이트)티탄, 모노-n-프로폭시·트리스(에틸아세토아세테이트)티탄, 모노-i-프로폭시·트리스(에틸아세토아세테이트)티탄, 모노-n-부톡시·트리스(에틸아세토아세테이트)티탄, 모노-sec-부톡시·트리스(에틸아세토아세테이트)티탄, 모노-t-부톡시·트리스(에틸아세토아세테이트)티탄, 테트라키스(에틸아세토아세테이트)티탄, 모노(아세틸아세토네이토) 트리스(에틸아세토아세테이트)티탄, 비스(아세틸아세토네이토) 비스(에틸아세토아세테이트)티탄, 트리스(아세틸아세토네이토) 모노(에틸아세토아세테이트)티탄 등의 티탄 킬레이트 화합물;Examples of the metal chelate compound include triethoxy mono (acetylacetonato) titanium, tri-n-propoxy mono (acetylacetonato) titanium, and tri-i-propoxy mono (acetylacetonato). Titanium, tri-n-butoxy mono (acetylacetonato) titanium, tri-sec-butoxy mono (acetylacetonato) titanium, tri-t-butoxy mono (acetylacetonato) titanium , Diethoxy bis (acetylacetonato) titanium, di-n-propoxy bis (acetylacetonato) titanium, di-i-propoxy bis (acetylacetonato) titanium, di-n-part Toxy bis (acetylacetonato) titanium, di-sec-butoxy bis (acetylacetonato) titanium, di-t-butoxy bis (acetylacetonato) titanium, monoethoxy tris (acetyl Acetonitrile) titanium, mono-n-propoxy tris (acetylacetonato) titanium, mono-i-propoxy tris (acetylacetonato) tea Mono-n-butoxy tris (acetylacetonato) titanium, mono-sec-butoxy tris (acetylacetonato) titanium, mono-t-butoxy tris (acetylacetonato) titanium, Tetrakis (acetylacetonate) titanium, triethoxy mono (ethylacetoacetate) titanium, tri-n-propoxy mono (ethylacetoacetate) titanium, tri-i-propoxy mono (ethylacetoacetate) Titanium, tri-n-butoxy mono (ethylacetoacetate) titanium, tri-sec-butoxy mono (ethylacetoacetate) titanium, tri-t-butoxy mono (ethylacetoacetate) titanium, diethoxy Bis (ethylacetoacetate) titanium, di-n-propoxy bis (ethylacetoacetate) titanium, di-i-propoxy bis (ethylacetoacetate) titanium, di-n-butoxy bis (ethylacetoacetate Titanium, di-sec-butoxy bis (ethylacetoacetate) Titanium, di-t-butoxy ratio (Ethylacetoacetate) titanium, monoethoxy tris (ethylacetoacetate) titanium, mono-n-propoxy tris (ethylacetoacetate) titanium, mono-i-propoxy tris (ethylacetoacetate) titanium, mono -n-butoxy tris (ethylacetoacetate) titanium, mono-sec-butoxy tris (ethylacetoacetate) titanium, mono-t-butoxy tris (ethylacetoacetate) titanium, tetrakis (ethylacetoacetate Titanium, titanium, such as mono (acetylacetonate) tris (ethylacetoacetate) titanium, bis (acetylacetonate) bis (ethylacetoacetate) titanium, tris (acetylacetonate) mono (ethylacetoacetate) titanium Chelate compounds;

트리에톡시·모노(아세틸아세토네이토)지르코늄, 트리-n-프로폭시·모노(아세틸아세토네이토)지르코늄, 트리-i-프로폭시·모노(아세틸아세토네이토)지르코늄, 트리-n-부톡시·모노(아세틸아세토네이토)지르코늄, 트리-sec-부톡시·모노(아세틸 아세토네이토)지르코늄, 트리-t-부톡시·모노(아세틸아세토네이토)지르코늄, 디에톡시·비스(아세틸아세토네이토)지르코늄, 디-n-프로폭시·비스(아세틸아세토네이토)지르코늄, 디-i-프로폭시·비스(아세틸아세토네이토)지르코늄, 디-n-부톡시·비스(아세틸아세토네이토)지르코늄, 디-sec-부톡시·비스(아세틸아세토네이토)지르코늄, 디-t-부톡시·비스(아세틸아세토네이토)지르코늄, 모노에톡시·트리스(아세틸아세토네이토)지르코늄, 모노-n-프로폭시·트리스(아세틸아세토네이토)지르코늄, 모노-i-프로폭시·트리스(아세틸아세토네이토)지르코늄, 모노-n-부톡시·트리스(아세틸아세토네이토)지르코늄, 모노-sec-부톡시·트리스(아세틸아세토네이토)지르코늄, 모노-t-부톡시·트리스(아세틸아세토네이토)지르코늄, 테트라키스(아세틸아세토네이토)지르코늄, 트리에톡시·모노(에틸아세토아세테이트)지르코늄, 트리-n-프로폭시·모노(에틸아세토아세테이트)지르코늄, 트리-i-프로폭시·모노(에틸아세토아세테이트)지르코늄, 트리-n-부톡시·모노(에틸아세토아세테이트)지르코늄, 트리-sec-부톡시·모노(에틸아세토아세테이트)지르코늄, 트리-t-부톡시·모노(에틸아세토아세테이토)지르코늄, 디에톡시·비스(에틸아세토아세테이트)지르코늄, 디-n-프로폭시·비스(에틸아세토아세테이트)지르코늄, 디-i-프로폭시·비스(에틸아세토아세테이트)지르코늄, 디-n-부톡시·비스(에틸아세토아세테이트)지르코늄, 디-sec-부톡시·비스(에틸아세토아세테이트)지르코늄, 디-t-부톡시·비스(에틸아세토아세테이트)지르코늄, 모노에톡시·트리스(에틸아세토아세테이트)지르코늄, 모노-n-프로폭시·트리스(에틸아세토아세테이트)지르코늄, 모노-i-프로폭시·트리스(에틸아세토아세테이트)지르코늄, 모노-n-부톡시·트리스(에틸아세토아세테이트)지르코늄, 모노-sec-부톡시·트리스(에틸아세토아세테이트)지르코늄, 모노-t-부톡시·트리스(에틸아세토아세테이트)지르코늄, 테트라키스(에틸아세토아세테이트)지르코늄, 모노 (아세틸아세토네이토) 트리스(에틸아세토아세테이트)지르코늄, 비스(아세틸아세토네이토) 비스(에틸아세토아세테이트)지르코늄, 트리스(아세틸아세토네이토) 모노(에틸아세토아세테이트)지르코늄 등의 지르코늄 킬레이트 화합물;Triethoxy mono (acetylacetonato) zirconium, tri-n-propoxy mono (acetylacetonato) zirconium, tri-i-propoxy mono (acetylacetonato) zirconium, tri-n-part Toxy mono (acetylacetonato) zirconium, tri-sec-butoxy mono (acetyl acetonato) zirconium, tri-t-butoxy mono (acetylacetonato) zirconium, diethoxy bis (acetylaceto Neato) zirconium, di-n-propoxy bis (acetylacetonato) zirconium, di-i-propoxy bis (acetylacetonato) zirconium, di-n-butoxy bis (acetylacetonato) ) Zirconium, di-sec-butoxy bis (acetylacetonato) zirconium, di-t-butoxy bis (acetylacetonato) zirconium, monoethoxy tris (acetylacetonato) zirconium, mono- n-propoxy tris (acetylacetonato) zirconium, mono-i-propoxy tris ( Cetylacetonato) zirconium, mono-n-butoxytris (acetylacetonato) zirconium, mono-sec-butoxytris (acetylacetonato) zirconium, mono-t-butoxytris (acetylaceto Neito) zirconium, tetrakis (acetylacetonato) zirconium, triethoxy mono (ethylacetoacetate) zirconium, tri-n-propoxy mono (ethylacetoacetate) zirconium, tri-i-propoxy mono (Ethylacetoacetate) zirconium, tri-n-butoxy mono (ethylacetoacetate) zirconium, tri-sec-butoxy mono (ethylacetoacetate) zirconium, tri-t-butoxy mono (ethylacetoacetate Earth) zirconium, diethoxy bis (ethylacetoacetate) zirconium, di-n-propoxy bis (ethylacetoacetate) zirconium, di-i-propoxy bis (ethylacetoacetate) zirconium, di-n-part Toxy bis (ethyl acetate Acetate) zirconium, di-sec-butoxybis (ethylacetoacetate) zirconium, di-t-butoxybis (ethylacetoacetate) zirconium, monoethoxytris (ethylacetoacetate) zirconium, mono-n- Propoxy tris (ethylacetoacetate) zirconium, mono-i-propoxy tris (ethylacetoacetate) zirconium, mono-n-butoxy tris (ethylacetoacetate) zirconium, mono-sec-butoxy tris ( Ethylacetoacetate) zirconium, mono-t-butoxytris (ethylacetoacetate) zirconium, tetrakis (ethylacetoacetate) zirconium, mono (acetylacetonate) tris (ethylacetoacetate) zirconium, bis (acetylacetonate Zirconium chelates such as earth) bis (ethylacetoacetate) zirconium, tris (acetylacetonato) mono (ethylacetoacetate) zirconium, etc. .;

트리스(아세틸아세토네이토)알루미늄, 트리스(에틸아세토아세테이트)알루미늄 등의 알루미늄 킬레이트 화합물 등을 들 수 있으며, 바람직하게는 티탄 또는 알루미늄의 킬레이트 화합물, 특히 바람직하게는 티탄의 킬레이트 화합물을 들 수 있다.Aluminum chelate compounds such as tris (acetylacetonato) aluminum and tris (ethylacetoacetate) aluminum; and the like, and preferably chelate compounds of titanium or aluminum, and particularly preferably chelate compounds of titanium.

이러한 금속 킬레이트 화합물은 1종 또는 2종 이상을 동시에 사용할 수도 있다.These metal chelate compounds may be used alone or in combination of two or more.

산 촉매로서는 예를 들면 염산, 질산, 황산, 불산, 인산, 붕산, 옥살산 등의 무기산;Examples of the acid catalyst include inorganic acids such as hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, phosphoric acid, boric acid, and oxalic acid;

아세트산, 프로피온산, 부탄산, 펜탄산, 헥산산, 헵탄산, 옥탄산, 노난산, 데칸산, 옥살산, 말레산, 메틸말론산, 아디프산, 세박산, 갈산, 부티르산, 멜리트산, 아라키돈산, 시킴산 (shikimic acid), 2-에틸헥산산, 올레산, 스테아르산, 리놀산, 리놀레산, 살리실산, 벤조산, p-아미노벤조산, p-톨루엔술폰산, 벤젠술폰산, 모노클로로아세트산, 디클로로아세트산, 트리클로로아세트산, 트리플루오로아세트산, 포름산, 말론산, 술폰산, 프탈산, 푸마르산, 시트르산, 타르타르산, 숙신산, 푸마르산, 이타콘산, 메사콘산, 시트라콘산, 말산, 글루타르산의 가수분해물, 말레 산 무수물의 가수분해물, 프탈산 무수물의 가수분해물 등의 유기산을 들 수 있으며, 유기산을 보다 바람직한 예로서 들 수 있다.Acetic acid, propionic acid, butanoic acid, pentanic acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, oxalic acid, maleic acid, methylmalonic acid, adipic acid, sebacic acid, gallic acid, butyric acid, melitric acid, arachidonic acid , Shikimic acid, 2-ethylhexanoic acid, oleic acid, stearic acid, linoleic acid, linoleic acid, salicylic acid, benzoic acid, p-aminobenzoic acid, p-toluenesulfonic acid, benzenesulfonic acid, monochloroacetic acid, dichloroacetic acid, trichloroacetic acid Hydrolyzate of trifluoroacetic acid, formic acid, malonic acid, sulfonic acid, phthalic acid, fumaric acid, citric acid, tartaric acid, succinic acid, fumaric acid, itaconic acid, mesaconic acid, citraconic acid, malic acid, glutaric acid, maleic anhydride And organic acids such as hydrolyzates of phthalic anhydride are mentioned, and organic acids are mentioned as more preferable examples.

이들 산 촉매는 1종 또는 2종 이상을 동시에 사용할 수도 있다.These acid catalysts can also use 1 type (s) or 2 or more types simultaneously.

상기 촉매의 사용량은 화합물 (1) 내지 (3) 중의 R1O-기, R2O-기, R4O-기 및 R5O-기로 표시되는 기의 총량 1 몰에 대하여 통상 0.00001 내지 10 몰, 바람직하게는 0.00005 내지 5 몰이다. 촉매의 사용량이 상기 범위 내이면, 반응 중의 중합체 석출 및 겔화의 우려가 적다. 또한, 본 발명에 있어서, (A) 성분을 가수분해할 때의 온도는 통상 0 내지 100 ℃, 바람직하게는 15 내지 80 ℃이다.The amount of the catalyst used is usually 0.00001 to 10 with respect to 1 mol of the total amount of the groups represented by the R 1 O-groups, R 2 O-groups, R 4 O-groups, and R 5 O-groups in the compounds (1) to (3). Moles, preferably 0.00005 to 5 moles. When the usage-amount of a catalyst is in the said range, there exists little possibility of polymer precipitation and gelation during reaction. In addition, in this invention, the temperature at the time of hydrolyzing (A) component is 0-100 degreeC normally, Preferably it is 15-80 degreeC.

또한, (A) 성분 중, 각 성분을 완전 가수분해 축합물로 환산했을 때, 화합물 (2)는 화합물 (1) 내지 (3)의 총량 중 5 내지 75 중량%, 바람직하게는 10 내지 70 중량%, 더욱 바람직하게는 15 내지 70 중량%이다. 또한, 화합물 (1) 및(또는) (3)은 화합물 (1) 내지 (3)의 총량 중 95 내지 25 중량%, 바람직하게는 90 내지 30 중량%, 더욱 바람직하게는 85 내지 30 중량%이다. 화합물 (2)가 화합물 (1) 내지 (3)의 총량 중 5 내지 75 중량%인 것이 얻어지는 도포막의 탄성율이 높고, 동시에 저유전성이 특히 우수하다.Further, in the component (A), when each component is converted into a fully hydrolyzed condensate, the compound (2) is 5 to 75% by weight, preferably 10 to 70% by weight in the total amount of the compounds (1) to (3). %, More preferably 15 to 70% by weight. Further, compounds (1) and / or (3) are 95 to 25% by weight, preferably 90 to 30% by weight, more preferably 85 to 30% by weight, based on the total amount of compounds (1) to (3). . The elasticity modulus of the coating film obtained that compound (2) is 5-75 weight% in the total amount of compounds (1)-(3) is high, and at the same time, it is especially excellent in low dielectric constant.

여기에서, 본 발명에서의 완전 가수분해 축합물이란, 화합물 (1) 내지 (3) 중의 R1O-기, R2O-기, R4O-기 및 R5O-기가 1OO % 가수분해하여 SiOH기가 되고, 더욱 완전히 축합하여 실록산 구조가 된 것을 말한다.Here, the complete hydrolysis condensate in the present invention means that the R 1 O-group, R 2 O-group, R 4 O-group, and R 5 O-group in the compounds (1) to (3) are 100% hydrolyzed. To become an SiOH group, and more completely condensed to form a siloxane structure.

또한, (A) 성분으로서는 얻어지는 조성물의 저장 안정성이 보다 우수하기 때 문에, 화합물 (1) 및 화합물 (2)의 가수분해 축합물이 바람직하다.Moreover, as (A) component, since the storage stability of the composition obtained is more excellent, the hydrolysis-condensation product of compound (1) and compound (2) is preferable.

본 발명의 LCD용 층간 절연막은 (A) 성분과 용제를 함유하는 용액을 가열함으로써 얻을 수 있다.The interlayer insulation film for LCDs of this invention can be obtained by heating the solution containing (A) component and a solvent.

이 때 사용할 수 있는 용제로서는 예를 들면 알콜계 용매, 케톤계 용매, 아미드계 용매, 에스테르계 용매 및 비프로톤계 용매 군에서 선택된 1종 이상을 들 수 있다.Examples of the solvent that can be used at this time include one or more selected from the group consisting of alcohol solvents, ketone solvents, amide solvents, ester solvents, and aprotic solvents.

여기에서, 알콜계 용매로서는 메탄올, 에탄올, n-프로판올, i-프로판올, n-부탄올, i-부탄올, sec-부탄올, t-부탄올, n-펜탄올, i-펜탄올, 2-메틸부탄올, sec-펜탄올, t-펜탄올, 3-메톡시부탄올, n-헥산올, 2-메틸펜탄올, sec-헥산올, 2-에틸부탄올, sec-헵탄올, 헵탄올-3, n-옥탄올, 2-에틸시클로헥산올, sec-옥탄올, n-노닐알콜, 2,6-디메틸헵탄올-4, n-데칸올, sec-운데실알콜, 트리메틸노닐알콜, sec-테트라데실알콜, sec-헵타데실알콜, 페놀, 시클로헥산올, 메틸시클로헥산올, 3,3,5-트리메틸시클로헥산올, 벤질알콜, 디아세톤알콜 등의 모노 알콜계 용매;Here, as the alcohol solvent, methanol, ethanol, n-propanol, i-propanol, n-butanol, i-butanol, sec-butanol, t-butanol, n-pentanol, i-pentanol, 2-methylbutanol, sec-pentanol, t-pentanol, 3-methoxybutanol, n-hexanol, 2-methylpentanol, sec-hexanol, 2-ethylbutanol, sec-heptanol, heptanol-3, n-octane Ol, 2-ethylcyclohexanol, sec-octanol, n-nonyl alcohol, 2,6-dimethylheptanol-4, n-decanol, sec-undecyl alcohol, trimethylnonyl alcohol, sec-tetradecyl alcohol, mono alcohol solvents such as sec-heptadecyl alcohol, phenol, cyclohexanol, methylcyclohexanol, 3,3,5-trimethylcyclohexanol, benzyl alcohol and diacetone alcohol;

에틸렌글리콜, 1,2-프로필렌글리콜, 1,3-부틸렌글리콜, 펜탄디올-2,4,2-메틸펜탄디올-2,4, 헥산디올-2,5, 헵탄디올-2,4, 2-에틸헥산디올-1,3, 디에틸렌글리콜, 디프로필렌글리콜, 트리에틸렌글리콜, 트리프로필렌글리콜 등의 다가 알콜계 용매;Ethylene glycol, 1,2-propylene glycol, 1,3-butylene glycol, pentanediol-2,4,2-methylpentanediol-2,4, hexanediol-2,5, heptanediol-2,4, 2 Polyhydric alcohol solvents such as ethylhexanediol-1,3, diethylene glycol, dipropylene glycol, triethylene glycol and tripropylene glycol;

에틸렌글리콜 모노메틸에테르, 에틸렌글리콜 모노에틸에테르, 에틸렌글리콜 모노프로필에테르, 에틸렌글리콜 모노부틸에테르, 에틸렌글리콜 모노헥실에테르, 에틸렌글리콜 모노페닐에테르, 에틸렌글리콜 모노-2-에틸부틸에테르, 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노에틸에테르, 디에틸렌글리콜 모노프로필에 테르, 디에틸렌글리콜 모노부틸에테르, 디에틸렌글리콜 모노헥실에테르, 프로필렌글리콜 모노메틸에테르, 프로필렌글리콜 모노에틸에테르, 프로필렌글리콜 모노프로필에테르, 프로필렌글리콜 모노부틸에테르, 디프로필렌글리콜 모노메틸에테르, 디프로필렌글리콜 모노에틸에테르, 디프로필렌글리콜 모노프로필에테르 등의 다가 알콜 부분 에테르계 용매 등을 들 수 있다.Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, ethylene glycol monohexyl ether, ethylene glycol monophenyl ether, ethylene glycol mono-2-ethylbutyl ether, diethylene glycol mono Methyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monohexyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, And polyhydric alcohol partial ether solvents such as propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, and dipropylene glycol monopropyl ether.

이들 알콜계 용매는 1종 또는 2종 이상을 동시에 사용할 수도 있다.These alcohol solvents may be used alone or in combination of two or more.

케톤계 용매로서는 아세톤, 메틸에틸케톤, 메틸-n-프로필케톤, 메틸-n-부틸케톤, 디에틸케톤, 메틸-i-부틸케톤, 메틸-n-펜틸케톤, 에틸-n-부틸케톤, 메틸-n-헥실케톤, 디-i-부틸케톤, 트리메틸노나논, 시클로헥사논, 2-헥사논, 메틸시클로헥사논, 2,4-펜탄디온, 아세토닐아세톤, 아세토페논, 펜콘 등 외에 아세틸아세톤, 2,4-헥산디온, 2,4-헵탄디온, 3,5-헵탄디온, 2,4-옥탄디온, 3,5-옥탄디온, 2,4-노난디온, 3,5-노난디온, 5-메틸-2,4-헥산디온, 2,2,6,6-테트라메틸-3,5-헵탄디온, 1,1,1,5,5,5-헥사플루오로-2,4-헵탄디온 등의 β-디케톤류 등을 들 수 있다.As a ketone solvent, acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-n-butyl ketone, diethyl ketone, methyl-i-butyl ketone, methyl-n-pentyl ketone, ethyl-n-butyl ketone, methyl acetylacetone in addition to -n-hexyl ketone, di-i-butyl ketone, trimethylnonanone, cyclohexanone, 2-hexanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone, acetophenone, phencone, etc. , 2,4-hexanedione, 2,4-heptanedione, 3,5-heptanedione, 2,4-octanedione, 3,5-octanedione, 2,4-nonanedione, 3,5-nonanedione, 5-methyl-2,4-hexanedione, 2,2,6,6-tetramethyl-3,5-heptanedione, 1,1,1,5,5,5-hexafluoro-2,4-heptane (Beta) -diketones, such as dione, etc. are mentioned.

이들 케톤계 용매는 1종 또는 2종 이상을 동시에 사용할 수도 있다.These ketone solvents can also use 1 type (s) or 2 or more types simultaneously.

아미드계 용매로서는 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, N-에틸포름아미드, N,N-디에틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-에틸아세트아미드, N,N-디에틸아세트아미드, N-메틸프로피온아미드, N-메틸피롤리돈, N-포르밀모르폴린, N-포르밀피페리딘, N-포르밀피롤리딘, N-아세틸모르폴린, N-아세틸피페리딘, N-아세틸피롤리딘 등을 들 수 있다.As the amide solvent, formamide, N-methylformamide, N, N-dimethylformamide, N-ethylformamide, N, N-diethylformamide, acetamide, N-methylacetamide, N, N-dimethyl Acetamide, N-ethylacetamide, N, N-diethylacetamide, N-methylpropionamide, N-methylpyrrolidone, N-formylmorpholine, N-formylpiperidine, N-formylpyrroli And N-acetylmorpholine, N-acetylpiperidine, N-acetylpyrrolidine and the like.

이러한 아미드계 용매는 1종 또는 2종 이상을 동시에 사용할 수도 있다. These amide solvents may be used alone or in combination of two or more.                     

에스테르계 용매로서는 디에틸카보네이트, 탄산 에틸렌, 탄산 프로필렌, 탄산 디에틸, 아세트산 메틸, 아세트산 에틸, γ-부티로락톤, γ-발레로락톤, 아세트산 n-프로필, 아세트산 i-프로필, 아세트산 n-부틸, 아세트산 i-부틸, 아세트산 sec-부틸, 아세트산 n-펜틸, 아세트산 sec-펜틸, 아세트산 3-메톡시부틸, 아세트산 메틸펜틸, 아세트산 2-에틸부틸, 아세트산 2-에틸헥실, 아세트산 벤질, 아세트산 시클로헥실, 아세트산 메틸시클로헥실, 아세트산 n-노닐, 아세토아세트산 메틸, 아세토아세트산 에틸, 아세트산 에틸렌글리콜 모노메틸에테르, 아세트산 에틸렌글리콜 모노에틸에테르, 아세트산 디에틸렌글리콜 모노메틸에테르, 아세트산 디에틸렌글리콜 모노에틸에테르, 아세트산 디에틸렌글리콜 모노-n-부틸에테르, 아세트산 프로필렌글리콜 모노메틸에테르, 아세트산 프로필렌글리콜 모노에틸에테르, 아세트산 프로필렌글리콜 모노프로필에테르, 아세트산 프로필렌글리콜 모노부틸에테르, 아세트산 디프로필렌글리콜 모노메틸에테르, 아세트산 디프로필렌글리콜 모노에틸에테르, 디아세트산 글리콜, 아세트산 메톡시트리글리콜, 프로피온산 에틸, 프로피온산 n-부틸, 프로피온산 i-아밀, 옥살산 디에틸, 옥살산 디-n-부틸, 락트산 메틸, 락트산 에틸, 락트산 n-부틸, 락트산 n-아밀, 말론산 디에틸, 프탈산 디메틸, 프탈산 디에틸 등을 들 수 있다.Examples of the ester solvent include diethyl carbonate, ethylene carbonate, propylene carbonate, diethyl carbonate, methyl acetate, ethyl acetate, γ-butyrolactone, γ-valerolactone, n-propyl acetate, i-propyl acetate and n-butyl acetate , I-butyl acetate, sec-butyl acetate, n-pentyl acetate, sec-pentyl acetate, 3-methoxybutyl acetate, methylpentyl acetate, 2-ethylbutyl acetate, 2-ethylhexyl acetate, benzyl acetate, cyclohexyl acetate , Methylcyclohexyl acetate, n-nonyl acetate, methyl acetoacetate, ethyl acetoacetic acid, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, acetate diethylene glycol monoethyl ether, acetic acid Diethylene glycol mono-n-butyl ether, propylene glycol monomethyl ether, Propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, diacetate glycol, methoxytriglycol acetate, ethyl propionate, N-butyl propionate, i-amyl propionate, diethyl oxalate, di-n-butyl oxalate, methyl lactate, ethyl lactate, n-butyl lactate, n-amyl lactate, diethyl malonate, dimethyl phthalate, diethyl phthalate, and the like. Can be mentioned.

이들 에스테르계 용매는 1종 또는 2종 이상을 동시에 사용할 수도 있다.These ester solvents may be used alone or in combination of two or more.

비프로톤계 용매로서는 아세토니트릴, 디메틸설폭시드, N,N,N',N'-테트라에틸설파미드, 헥사메틸인산 트리아미드, N-메틸모르폴론, N-메틸피롤, N-에틸피롤, N-메틸-Δ3-피롤린, N-메틸피페리딘, N-에틸피페리딘, N,N-디메틸피페라진, N-메틸 이미다졸, N-메틸-4-피페리돈, N-메틸-2-피페리돈, N-메틸-2-피롤리돈, 1,3-디메틸 -2-이미다졸리디논, 1,3-디메틸테트라히드로-2(1H)-피리미디논 등을 들 수 있다.Examples of aprotic solvents include acetonitrile, dimethyl sulfoxide, N, N, N ', N'-tetraethylsulfamide, hexamethyl phosphate triamide, N-methylmorpholone, N-methylpyrrole, N-ethylpyrrole and N -Methyl-Δ3-pyrroline, N-methylpiperidine, N-ethylpiperidine, N, N-dimethylpiperazine, N-methyl imidazole, N-methyl-4-piperidone, N-methyl-2 Piperidone, N-methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 1,3-dimethyltetrahydro-2 (1H) -pyrimidinone, and the like.

이들 용제는 1종 또는 2종 이상을 동시에 사용할 수도 있다.These solvents can also use 1 type (s) or 2 or more types simultaneously.

본 발명에서 사용하는 가수분해 축합물은, 예를 들면 (A) 성분을 용제에 용해하고, 촉매와 물을 첨가하여 가수분해를 행함으로써 제조한다.The hydrolysis-condensation product used by this invention is manufactured by melt | dissolving (A) component in a solvent, for example, and hydrolyzing by adding a catalyst and water.

상기 (A) 성분을 가수분해, 축합시킬 때에는 (A) 성분 중의 알콕실기 1 몰에 대하여 0.8 내지 20 몰의 물을 사용하는 것이 바람직하고, 0.8 내지 15 몰의 물을 첨가하는 것이 특히 바람직하다. 첨가하는 물의 양이 0.8 몰 미만이면 도포막의 균열 내성이 떨어지고, 20 몰을 초과하면 도포막의 도포 균일성이 떨어지는 경우가 있다.When hydrolyzing and condensing the said (A) component, it is preferable to use 0.8-20 mol of water with respect to 1 mol of alkoxyl groups in (A) component, and it is especially preferable to add 0.8-15 mol of water. If the amount of water to be added is less than 0.8 mol, the crack resistance of the coating film is inferior, and if it exceeds 20 mol, the coating uniformity of the coating film may be inferior.

본 발명에 있어서, (A) 성분과 (B) 성분을 가수분해할 때의 온도는 통상 0 내지 100 ℃, 바람직하게는 15 내지 80 ℃이다.In this invention, the temperature at the time of hydrolyzing (A) component and (B) component is 0-100 degreeC normally, Preferably it is 15-80 degreeC.

본 발명에서 사용하는 가수분해 축합물의 전체 고형분 농도는 바람직하게는 2 내지 30 중량%이고, 사용 목적에 따라 적절하게 조정된다. 조성물의 전체 고형분 농도가 2 내지 30 중량%이면, 도포막의 막 두께가 적당한 범위가 되어 보존 안정성도 보다 우수해진다.The total solid concentration of the hydrolyzed condensate used in the present invention is preferably 2 to 30% by weight, and is appropriately adjusted according to the purpose of use. When the total solid concentration of the composition is 2 to 30% by weight, the film thickness of the coating film is in a suitable range, and the storage stability is also excellent.

본 발명에서 사용하는 가수분해 축합물은, 또한 하기와 같은 성분을 함유할 수도 있다.The hydrolysis-condensation product used by this invention may also contain the following components.

그 밖의 첨가제OTHER ADDITIVES

본 발명에서 사용하는 가수분해 축합물에는 콜로이드형 실리카, 콜로이드형 알루미나, 유기 중합체, 계면 활성제, 실란 커플링제, 트리아젠 화합물, 라디칼 발생제, 반응성 이중 결합 함유 화합물, 반응성 삼중 결합 함유 화합물 등의 성분을 더 첨가할 수도 있다.The hydrolytic condensates used in the present invention include components such as colloidal silica, colloidal alumina, organic polymers, surfactants, silane coupling agents, triazane compounds, radical generators, reactive double bond-containing compounds, reactive triple bond-containing compounds, and the like. It is also possible to add more.

콜로이드형 실리카란, 예를 들면 고순도의 규산 무수물을 상기 친수성 유기 용매에 분산한 분산액이며, 통상 평균 입경이 5 내지 30 ㎛, 바람직하게는 10 내지 20 ㎛, 고형분 농도가 10 내지 40 중량% 정도의 것이다. 이러한 콜로이드형 실리카로서는, 예를 들면 닛산 가가꾸 고교(주) 제조의 메탄올 실리카 졸 및 이소프로판올 실리카 졸; 쇼꾸바이 가가꾸 고교(주) 제조의 오스칼 등을 들 수 있다.Colloidal silica is, for example, a dispersion in which high-purity silicic anhydride is dispersed in the hydrophilic organic solvent, and usually has an average particle diameter of 5 to 30 µm, preferably 10 to 20 µm, and a solid concentration of about 10 to 40 wt%. will be. Examples of such colloidal silica include methanol silica sol and isopropanol silica sol manufactured by Nissan Chemical Industries, Ltd .; Oskal from Shokubai Kagaku Kogyo Co., Ltd. may be mentioned.

콜로이드형 알루미나로서는 닛산 가가꾸 고교(주) 제조의 알루미나 졸 520, 100, 200; 가와껭 파인 케미컬(주) 제조의 알루미나 클리어 졸, 알루미나 졸 10, 132 등을 들 수 있다.Examples of the colloidal alumina include alumina sol 520, 100, 200 manufactured by Nissan Chemical Industries, Ltd .; The alumina clear sol, the alumina sol 10, 132, etc. made by Kawaken Fine Chemical Co., Ltd. are mentioned.

유기 중합체로서는, 예를 들면 당쇄 구조를 갖는 화합물, 비닐아미드계 중합체, (메트)아크릴계 중합체, 방향족 비닐 화합물, 덴드리머, 폴리이미드, 폴리아미드산, 폴리아릴렌, 폴리아미드, 폴리퀴녹살린, 폴리옥사디아졸, 불소계 중합체, 폴리알킬렌옥시드 구조를 갖는 화합물 등을 들 수 있다.Examples of the organic polymer include a compound having a sugar chain structure, a vinylamide polymer, a (meth) acrylic polymer, an aromatic vinyl compound, a dendrimer, a polyimide, a polyamic acid, a polyarylene, a polyamide, a polyquinoxaline, and a polyoxa The compound which has a diazole, a fluorine-type polymer, a polyalkylene oxide structure, etc. are mentioned.

폴리알킬렌옥시드 구조를 갖는 화합물로서는, 폴리메틸렌옥시드 구조, 폴리에틸렌옥시드 구조, 폴리프로필렌옥시드 구조, 폴리테트라메틸렌옥시드 구조, 폴리부틸렌옥시드 구조 등을 들 수 있다.As a compound which has a polyalkylene oxide structure, a polymethylene oxide structure, a polyethylene oxide structure, a polypropylene oxide structure, a polytetramethylene oxide structure, a polybutylene oxide structure, etc. are mentioned.

구체적으로는 폴리옥시메틸렌 알킬에테르, 폴리옥시에틸렌 알킬에테르, 폴리옥시에틸렌 알킬페닐에테르, 폴리옥시에틸렌 스테롤에테르, 폴리옥시에틸렌 라놀린 유도체, 알킬페놀포르말린 축합물의 산화 에틸렌 유도체, 폴리옥시에틸렌 폴리옥시프로필렌 블럭 공중합체, 폴리옥시에틸렌 폴리옥시프로필렌알킬에테르 등의 에테르형 화합물, 폴리옥시에틸렌 글리세린 지방산 에스테르, 폴리옥시에틸렌 소르비탄 지방산 에스테르, 폴리옥시에틸렌 소르비톨 지방산 에스테르, 폴리옥시에틸렌 지방산 알칸올아미드황산염 등의 에테르에스테르형 화합물, 폴리에틸렌글리콜 지방산 에스테르, 에틸렌글리콜 지방산 에스테르, 지방산 모노글리세라이드, 폴리글리세린 지방산 에스테르, 소르비탄 지방산 에스테르, 프로필렌글리콜 지방산 에스테르, 자당 지방산 에스테르 등의 에테르에스테르형 화합물 등을 들 수 있다.Specifically, polyoxymethylene alkyl ether, polyoxyethylene alkyl ether, polyoxyethylene alkylphenyl ether, polyoxyethylene sterol ether, polyoxyethylene lanolin derivatives, ethylene oxide derivatives of alkylphenol formalin condensation, polyoxyethylene polyoxypropylene block Ether type compounds, such as a copolymer and polyoxyethylene polyoxypropylene alkyl ether, ether, such as polyoxyethylene glycerin fatty acid ester, polyoxyethylene sorbitan fatty acid ester, polyoxyethylene sorbitol fatty acid ester, and polyoxyethylene fatty acid alkanolamide sulfate Ester compound, polyethylene glycol fatty acid ester, ethylene glycol fatty acid ester, fatty acid monoglyceride, polyglycerin fatty acid ester, sorbitan fatty acid ester, propylene glycol fatty acid ester, sucrose And the like ether ester type compounds such as esters.

폴리옥시에틸렌 폴리옥시프로필렌 블럭 공중합체로서는 하기와 같은 블럭 구조를 갖는 화합물을 들 수 있다.As a polyoxyethylene polyoxypropylene block copolymer, the compound which has the following block structure is mentioned.

-(A)j-(B)k--(A) j- (B) k-

-(A)j-(B)k-(A)l--(A) j- (B) k- (A) l-

식 중, A는 -CH2CH2O-로 표시되는 기, B는 -CH2CH(CH3)O-로 표시되는 기를 나타내고, j는 1 내지 90, k는 10 내지 99, l은 0 내지 90의 수를 나타낸다.Wherein, A is -CH 2 CH 2 group represented by O-, B represents a group represented by -CH 2 CH (CH 3) O- , j is 1 to 90, k is 10 to 99, l is 0 To 90.

이 중에서 폴리옥시에틸렌 알킬에테르, 폴리옥시에틸렌 폴리옥시프로필렌 블럭 공중합체, 폴리옥시에틸렌 폴리옥시프로필렌알킬에테르, 폴리옥시에틸렌 글리세린 지방산 에스테르, 폴리옥시에틸렌 소르비탄 지방산 에스테르, 폴리옥시에틸렌 소르비톨 지방산 에스테르 등의 에테르형 화합물을 보다 바람직한 예로서 들 수 있다. Among these, polyoxyethylene alkyl ether, polyoxyethylene polyoxypropylene block copolymer, polyoxyethylene polyoxypropylene alkyl ether, polyoxyethylene glycerin fatty acid ester, polyoxyethylene sorbitan fatty acid ester, polyoxyethylene sorbitol fatty acid ester, etc. Ether type compounds are mentioned as a more preferable example.                     

이들은 1종 또는 2종 이상을 동시에 사용할 수도 있다.These can also use 1 type (s) or 2 or more types simultaneously.

계면 활성제로서는 예를 들면 비이온계 계면 활성제, 음이온계 계면 활성제, 양이온계 계면 활성제, 양성 계면 활성제 등을 들 수 있으며, 또한 불소계 계면 활성제, 실리콘계 계면 활성제, 폴리알킬렌옥시드계 계면 활성제, 폴리(메트)아크릴레이트계 계면 활성제 등을 들 수 있고, 바람직하게는 불소계 계면 활성제, 실리콘계 계면 활성제를 들 수 있다.As surfactant, a nonionic surfactant, anionic surfactant, cationic surfactant, an amphoteric surfactant, etc. are mentioned, for example, A fluorine-type surfactant, silicone type surfactant, polyalkylene oxide type surfactant, poly ( (Meth) acrylate type surfactant etc. are mentioned, Preferably, a fluorine type surfactant and silicone type surfactant are mentioned.

불소계 계면 활성제로서는 예를 들면 1,1,2,2-테트라플로로옥틸(1,1,2,2-테트라플로로프로필)에테르, 1,1,2,2-테트라플로로옥틸헥실에테르, 옥타에틸렌글리콜 디(1,1,2,2-테트라플로로부틸)에테르, 헥사에틸렌글리콜 (1,1,2,2,3,3-헥사플로로펜틸)에테르, 옥타프로필렌글리콜 디(1,1,2,2-테트라플로로부틸)에테르, 헥사프로필렌글리콜 디(1,1,2,2,3,3-헥사플로로펜틸)에테르, 퍼플로로도데실술폰산 나트륨, 1,1,2,2,8,8,9,9,10,10-데카플로로도데칸, 1,1,2,2,3,3-헥사플로로데칸, N-[3-(퍼플루오로옥탄술폰아미드)프로필]-N,N'-디메틸-N-카르복시메틸렌암모늄베타인, 퍼플루오로알킬술폰아미드 프로필트리메틸암모늄염, 퍼플루오로알킬-N-에틸술포닐글리신염, 인산 비스(N-퍼플루오로옥틸술포닐-N-에틸아미노에틸), 모노퍼플루오로알킬 에틸인산 에스테르 등의 말단, 주쇄 및 측쇄 중 적어도 어느 한 부위에 플루오로알킬 또는 플루오로알킬렌기를 갖는 화합물로 이루어지는 불소계 계면 활성제를 들 수 있다.Examples of the fluorine-based surfactant include 1,1,2,2-tetrafluorooctyl (1,1,2,2-tetrafluoropropyl) ether, 1,1,2,2-tetrafluorooctylhexyl ether, Octaethylene glycol di (1,1,2,2-tetrafluorobutyl) ether, hexaethylene glycol (1,1,2,2,3,3-hexafluoropentyl) ether, octapropylene glycol di (1, 1,2,2-tetrafluorobutyl) ether, hexapropylene glycol di (1,1,2,2,3,3-hexafluoropentyl) ether, perfluorododecylsulfonic acid sodium, 1,1,2 , 2,8,8,9,9,10,10-decaplododecane, 1,1,2,2,3,3-hexafluorodecane, N- [3- (perfluorooctanesulfonamide) Propyl] -N, N'-dimethyl-N-carboxymethylene ammonium betaine, perfluoroalkylsulfonamide propyltrimethylammonium salt, perfluoroalkyl-N-ethylsulfonylglycine salt, bisphosphate bis (N-perfluorojade Terminal, main and branched chains, such as methylsulfonyl-N-ethylaminoethyl) and monoperfluoroalkyl ethylphosphate esters Alkyl or fluoroheteroborate to at least any one region may include a fluorine-based surface active agent comprising a compound having an alkylene group.

또한, 시판품으로서는 메가 팩 F142D, F172, F173, F183 (이상, 다이닛본 잉크 가가꾸 고교(주) 제조), 에프 톱 EF301, 303, 352 (신아끼다 가세이(주) 제조), 플로라이드 FC-430, FC-431 (스미토모 스리엠(주) 제조), 아사히가드 AG710, 서프론 S-382, SC-101, SC-102, SC-103, SC-104, SC-105, SC-106 (아사히 가라스(주) 제조), BM-1000, BM-1100 (유쇼(주) 제조), NBX-15 ((주)네오스) 등의 명칭으로 시판되고 있는 불소계 계면 활성제를 들 수 있다. 이들 중에서도 상기 메가 팩 F172, BM-1000, BM-1100, NBX-15가 특히 바람직하다. In addition, as a commercial item, Mega Pack F142D, F172, F173, F183 (above, Dai Nippon Ink Chemical Co., Ltd. product), F-Top EF301, 303, 352 (made by Shin-Kazada Kasei Co., Ltd.), Florid FC-430 FC-431 (manufactured by Sumitomo 3M Co., Ltd.), Asahi Guard AG710, Supron S-382, SC-101, SC-102, SC-103, SC-104, SC-105, SC-106 (Asahi Gara) Fluorine-type surfactant marketed by names, such as the Corporation | KK Corporation ", BM-1000, BM-1100 (made by Yusho Corporation), NBX-15 (NEOS Corporation), etc. are mentioned. Among these, the said mega pack F172, BM-1000, BM-1100, and NBX-15 are especially preferable.

실리콘계 계면 활성제로서는 예를 들면 SH7PA, SH21PA, SH30PA, ST94PA (모두 도레·다우 코닝·실리콘(주) 제조 등을 사용할 수 있다.As a silicone type surfactant, SH7PA, SH21PA, SH30PA, ST94PA (all are manufactured by Toray Dow Corning Silicone Co., Ltd., etc. can be used, for example).

계면 활성제의 사용량은 (A) 성분과 (B) 성분의 총량 100 중량부 (완전 가수분해 축합물)에 대하여 통상 0.0001 내지 10 중량부이다.The use amount of surfactant is 0.0001-10 weight part normally with respect to 100 weight part (complete hydrolysis condensate) of the total amount of (A) component and (B) component.

이들은 1종 또는 2종 이상을 동시에 사용할 수도 있다.These can also use 1 type (s) or 2 or more types simultaneously.

실란 커플링제로서는, 예를 들면 3-글리시딜옥시프로필 트리메톡시실란, 3-아미노글리시딜옥시프로필 트리에톡시실란, 3-메타크릴옥시프로필 트리메톡시실란, 3-글리시딜옥시프로필메틸 디메톡시실란, 1-메타크릴옥시프로필메틸 디메톡시실란, 3-아미노프로필 트리메톡시실란, 3-아미노프로필 트리에톡시실란, 2-아미노프로필 트리메톡시실란, 2-아미노프로필 트리에톡시실란, N-(2-아미노에틸)-3-아미노프로필 트리메톡시실란, N-(2-아미노에틸)-3-아미노프로필메틸 디메톡시실란, 3-우레이도프로필 트리메톡시실란, 3-우레이도프로필 트리에톡시실란, N-에톡시카르보닐-3-아미노프로필 트리메톡시실란, N-에톡시카르보닐-3-아미노프로필 트리에톡시실란, N-트리에톡시실릴프로필 트리에틸렌트리아민, N-트리에톡시실릴프로필 트리에틸렌트리아민, 10-트리메톡시실릴-1,4,7-트리아자데칸, 10-트리에톡시실릴-1,4,7-트리 아자데칸, 9-트리메톡시실릴-3,6-디아자노닐아세테이트, 9-트리에톡시실릴-3,6-디아자노닐아세테이트, N-벤질-3-아미노프로필 트리메톡시실란, N-벤질-3-아미노프로필 트리에톡시실란, N-페닐-3-아미노프로필 트리메톡시실란, N-페닐-3-아미노프로필 트리에톡시실란, N-비스(옥시에틸렌)-3-아미노프로필 트리메톡시실란, N-비스(옥시에틸렌)-3-아미노프로필 트리에톡시실란 등을 들 수 있다.Examples of the silane coupling agent include 3-glycidyloxypropyl trimethoxysilane, 3-aminoglycidyloxypropyl triethoxysilane, 3-methacryloxypropyl trimethoxysilane, and 3-glycidyloxy. Propylmethyl dimethoxysilane, 1-methacryloxypropylmethyl dimethoxysilane, 3-aminopropyl trimethoxysilane, 3-aminopropyl triethoxysilane, 2-aminopropyl trimethoxysilane, 2-aminopropyl trie Methoxysilane, N- (2-aminoethyl) -3-aminopropyl trimethoxysilane, N- (2-aminoethyl) -3-aminopropylmethyl dimethoxysilane, 3-ureidopropyl trimethoxysilane, 3 -Ureidopropyl triethoxysilane, N-ethoxycarbonyl-3-aminopropyl trimethoxysilane, N-ethoxycarbonyl-3-aminopropyl triethoxysilane, N-triethoxysilylpropyl triethylene Triamine, N-triethoxysilylpropyl triethylenetriamine, 10-tri Methoxysilyl-1,4,7-triazadecan, 10-triethoxysilyl-1,4,7-tri azadecane, 9-trimethoxysilyl-3,6-diazanyl acetate, 9-trie Oxysilyl-3,6-diazanyl acetate, N-benzyl-3-aminopropyl trimethoxysilane, N-benzyl-3-aminopropyl triethoxysilane, N-phenyl-3-aminopropyl trimethoxysilane , N-phenyl-3-aminopropyl triethoxysilane, N-bis (oxyethylene) -3-aminopropyl trimethoxysilane, N-bis (oxyethylene) -3-aminopropyl triethoxysilane, etc. are mentioned. Can be.

이들은 1종 또는 2종 이상을 동시에 사용할 수도 있다.These can also use 1 type (s) or 2 or more types simultaneously.

트리아젠 화합물로서는 예를 들면, 1,2-비스(3,3-디메틸트리아제닐)벤젠, 1,3-비스(3,3-디메틸트리아제닐)벤젠, 1,4-비스(3,3-디메틸트리아제닐)벤젠, 비스 (3,3-디메틸트리아제닐페닐)에테르, 비스(3,3-디메틸트리아제닐페닐)메탄, 비스(3, 3-디메틸트리아제닐페닐)술폰, 비스(3,3-디메틸트리아제닐페닐)설피드, 2,2-비스 [4-(3,3-디메틸트리아제닐페녹시)페닐]-1,1,1,3,3,3-헥사플루오로프로판, 2,2-비스 [4-(3,3-디메틸트리아제닐페녹시)페닐]프로판, 1,3,5-트리스(3,3-디메틸트리아제닐)벤젠, 2,7-비스(3,3-디메틸트리아제닐)-9,9-비스[4-(3,3-디메틸트리아제닐)페닐]플루오렌, 2,7-비스(3,3-디메틸트리아제닐)-9,9-비스[3-메틸-4-(3,3-디메틸트리아제닐)페닐]플루오렌, 2,7-비스(3,3-디메틸트리아제닐)-9,9-비스[3-페닐-4-(3,3-디메틸트리아제닐)페닐]플루오렌, 2,7-비스(3,3-디메틸트리아제닐)-9,9-비스[3-프로페닐-4-(3,3-디메틸트리아제닐)페닐]플루오렌, 2,7-비스(3,3-디메틸트리아제닐) -9,9-비스[3-플루오로-4-(3,3-디메틸트리아제닐)페닐]플루오렌, 2,7-비스(3,3-디메틸트리아제닐)-9,9-비스[3,5-디플루오로-4-(3,3-디메틸트리아제닐)페닐]플루오렌, 2,7-비스(3,3-디메틸트리아제닐)-9,9-비스[3-트리플루오로메틸-4-(3,3-디메틸트리 아제닐)페닐]플루오렌 등을 들 수 있다.As a triazene compound, a 1, 2-bis (3, 3- dimethyl triazenyl) benzene, a 1, 3-bis (3, 3- dimethyl triazenyl) benzene, a 1, 4-bis (3, 3-, Dimethyltriazenyl) benzene, bis (3,3-dimethyltriazenylphenyl) ether, bis (3,3-dimethyltriazenylphenyl) methane, bis (3,3-dimethyltriazenylphenyl) sulfone, bis (3,3 -Dimethyltriazenylphenyl) sulfide, 2,2-bis [4- (3,3-dimethyltriazenylphenoxy) phenyl] -1,1,1,3,3,3-hexafluoropropane, 2, 2-bis [4- (3,3-dimethyltriazenylphenoxy) phenyl] propane, 1,3,5-tris (3,3-dimethyltriazenyl) benzene, 2,7-bis (3,3-dimethyl Triazenyl) -9,9-bis [4- (3,3-dimethyltriazenyl) phenyl] fluorene, 2,7-bis (3,3-dimethyltriazenyl) -9,9-bis [3-methyl -4- (3,3-dimethyltriazenyl) phenyl] fluorene, 2,7-bis (3,3-dimethyltriazenyl) -9,9-bis [3-phenyl-4- (3,3-dimethyl Triazenyl) phenyl] fluorene, 2,7-bis (3,3-dimethyltriazenyl) -9 , 9-bis [3-propenyl-4- (3,3-dimethyltriazenyl) phenyl] fluorene, 2,7-bis (3,3-dimethyltriazenyl) -9,9-bis [3-fluoro Rho-4- (3,3-dimethyltriazenyl) phenyl] fluorene, 2,7-bis (3,3-dimethyltriazenyl) -9,9-bis [3,5-difluoro-4- ( 3,3-dimethyltriazenyl) phenyl] fluorene, 2,7-bis (3,3-dimethyltriazenyl) -9,9-bis [3-trifluoromethyl-4- (3,3-dimethyltri Azenyl) phenyl] fluorene, etc. are mentioned.

이들은 1종 또는 2종 이상을 동시에 사용할 수도 있다.These can also use 1 type (s) or 2 or more types simultaneously.

라디칼 발생제로서는, 예를 들면 이소부티릴퍼옥시드, α,α'-비스(네오데카 노일퍼옥시)디이소프로필벤젠, 쿠밀퍼옥시네오데카노에이트, 디-n-프로필퍼옥시디카보네이트, 디이소프로필퍼옥시디카보네이트, 1,1,3,3-테트라메틸부틸퍼옥시네오데카노에이트, 비스(4-t-부틸시클로헥실)퍼옥시디카보네이트, 1-시클로헥실-1-메틸에틸퍼옥시네오데카노에이트, 디-2-에톡시에틸퍼옥시디카보네이트, 디(2-에틸헥실퍼옥시)디카보네이트, t-헥실퍼옥시네오데카노에이트, 디메톡시부틸퍼옥시디카보네이트, 디(3-메틸-3-메톡시부틸퍼옥시)디카보네이트, t-부틸퍼옥시네오데카노에이트, 2,4-디클로로벤조일퍼옥시드, t-헥실퍼옥시피발레이트, t-부틸퍼옥시피발레이트, 3,5,5-트리메틸헥사노일퍼옥시드, 옥타노일퍼옥시드, 라우로일퍼옥시드, 스테아로일퍼옥시드, 1,1,3,3-테트라메틸부틸퍼옥시 2-에틸헥사노에이트, 숙신산 퍼옥시드, 2,5-디메틸-2,5-디(2-에틸헥사노일퍼옥시)헥산, 1-시클로헥실-1-메틸에틸퍼옥시 2-에틸헥사노에이트, t-헥실퍼옥시 2-에틸헥사노에이트, t-부틸퍼옥시 2-에틸헥사노에이트, m-톨루오일 앤드 벤조일퍼옥시드, 벤조일퍼옥시드, t-부틸퍼옥시이소부틸레이트, 디-t-부틸퍼옥시-2-메틸시클로헥산, 1,1-비스(t-헥실퍼옥시)-3,3,5-트리메틸시클로헥산, 1,1-비스(t-헥실퍼옥시)시클로헥산, 1,1-비스(t-부틸퍼옥시) -3,3,5-트리메틸시클로헥산, 1,1-비스(t-부틸퍼옥시)시클로헥산, 2,2-비스(4,4-디- t-부틸퍼옥시시클로헥실)프로판, 1,1-비스(t-부틸퍼옥시)시클로데칸, t-헥실퍼옥시이소프로필 모노카보네이트, t-부틸퍼옥시말레산, t-부틸퍼옥시-3,3,5-트리메틸헥 사노에이트, t-부틸퍼옥시라우레이트, 2,5-디메틸-2,5-디(m-톨루오일퍼옥시)헥산, t-부틸퍼옥시이소프로필 모노카보네이트, t-부틸퍼옥시 2-에틸헥실 모노카보네이트, t-헥실퍼옥시벤조에이트, 2,5-디메틸-2,5-디(벤조일퍼옥시)헥산, t-부틸퍼옥시아세테이트, 2,2-비스(t-부틸퍼옥시)부탄, t-부틸퍼옥시벤조에이트, n-부틸-4,4-비스 (t-부틸퍼옥시)발레레이트, 디-t-부틸퍼옥시이소프탈레이트, α,α'-비스(t-부틸퍼옥시)디이소프로필벤젠, 디쿠밀퍼옥시드, 2,5-디메틸-2,5-디(t-부틸퍼옥시)헥산, t-부틸쿠밀퍼옥시드, 디-t-부틸퍼옥시드, p-멘탄히드로퍼옥시드, 2,5-디메틸-2,5-디(t-부틸퍼옥시)헥신-3, 디이소프로필벤젠히드로퍼옥시드, t-부틸트리메틸실릴퍼옥시드, 1,1,3,3-테트라메틸부틸히드로퍼옥시드, 쿠멘히드로퍼옥시드, t-헥실히드로퍼옥시드, t-부틸히드로퍼옥시드, 디벤질, 2,3-디메틸-2,3-디페닐부탄, α,α'-디메톡시-α,α'-디페닐비벤질, α,α'-디페닐-α-메톡시비벤질, α,α'-디페닐-α,α'-디메톡시비벤질, α,α'-디메톡시-α,α'-디메틸비벤질, α,α'-디메톡시비벤질, 3,4-디메틸-3,4-디페닐-n-헥산, 2,2,3,3-테트라페닐숙신산 니트릴 등을 들 수 있다.Examples of the radical generator include isobutyryl peroxide, α, α'-bis (neodecanoylperoxy) diisopropylbenzene, cumylperoxy neodecanoate, di-n-propylperoxydicarbonate, di Isopropyl peroxydicarbonate, 1,1,3,3-tetramethylbutylperoxy neodecanoate, bis (4-t-butylcyclohexyl) peroxydicarbonate, 1-cyclohexyl-1-methylethylperoxy neo Decanoate, di-2-ethoxyethylperoxydicarbonate, di (2-ethylhexylperoxy) dicarbonate, t-hexylperoxy neodecanoate, dimethoxybutylperoxydicarbonate, di (3-methyl- 3-methoxybutylperoxy) dicarbonate, t-butylperoxy neodecanoate, 2,4-dichlorobenzoyl peroxide, t-hexyl peroxy pivalate, t-butyl peroxy pivalate, 3,5, 5-trimethylhexanoyl peroxide, octanoyl peroxide, lauroyl peroxide, stearoyl peroxide, 1,1,3,3- Tramethylbutylperoxy 2-ethylhexanoate, succinic acid peroxide, 2,5-dimethyl-2,5-di (2-ethylhexanoylperoxy) hexane, 1-cyclohexyl-1-methylethylperoxy 2 -Ethylhexanoate, t-hexylperoxy 2-ethylhexanoate, t-butylperoxy 2-ethylhexanoate, m-toluoyl and benzoyl peroxide, benzoyl peroxide, t-butylperoxy isobutyl Late, di-t-butylperoxy-2-methylcyclohexane, 1,1-bis (t-hexylperoxy) -3,3,5-trimethylcyclohexane, 1,1-bis (t-hexylperoxy ) Cyclohexane, 1,1-bis (t-butylperoxy) -3,3,5-trimethylcyclohexane, 1,1-bis (t-butylperoxy) cyclohexane, 2,2-bis (4, 4-di-t-butylperoxycyclohexyl) propane, 1,1-bis (t-butylperoxy) cyclodecane, t-hexylperoxyisopropyl monocarbonate, t-butylperoxymaleic acid, t-butyl Peroxy-3,3,5-trimethylhexanoate, t-butylperoxylaurate, 2,5-dimethyl-2,5-di (m-toluo Peroxy) hexane, t-butylperoxyisopropyl monocarbonate, t-butylperoxy 2-ethylhexyl monocarbonate, t-hexyl peroxybenzoate, 2,5-dimethyl-2,5-di (benzoylperoxy ) Hexane, t-butylperoxy acetate, 2,2-bis (t-butylperoxy) butane, t-butylperoxybenzoate, n-butyl-4,4-bis (t-butylperoxy) valerate , Di-t-butylperoxy isophthalate, α, α'-bis (t-butylperoxy) diisopropylbenzene, dicumylperoxide, 2,5-dimethyl-2,5-di (t-butylper Oxy) hexane, t-butyl cumyl peroxide, di-t-butyl peroxide, p-mentane hydroperoxide, 2,5-dimethyl-2,5-di (t-butylperoxy) hexine-3, diiso Propylbenzenehydroperoxide, t-butyltrimethylsilylperoxide, 1,1,3,3-tetramethylbutylhydroperoxide, cumenehydroperoxide, t-hexylhydroperoxide, t-butylhydroperoxide, di Benzyl, 2,3-dimethyl-2,3-diphenylbutane, α, α'-dimethoxy-α, α'-diphenyl ratio Vaginal, α, α'-diphenyl-α-methoxybibenzyl, α, α'-diphenyl-α, α'-dimethoxybibenzyl, α, α'-dimethoxy-α, α'-dimethylbibenzyl , α, α'-dimethoxybibenzyl, 3,4-dimethyl-3,4-diphenyl-n-hexane, 2,2,3,3-tetraphenylsuccinate nitrile and the like.

이들은 1종 또는 2종 이상을 동시에 사용할 수도 있다.These can also use 1 type (s) or 2 or more types simultaneously.

반응성 이중 결합 함유 화합물로서는, 예를 들면 알릴벤젠, 디알릴벤젠, 트리알릴벤젠, 알릴옥시벤젠, 디알릴옥시벤젠, 트리알릴옥시벤젠, α,ω-디알릴옥시알칸류, α,ω-디알릴알켄류, α,ω-디알릴알켄류, 알릴아민, 디알릴아민, 트리알릴아민, N-알릴프탈이미드, N-알릴피로멜리트이미드, N,N'-디알릴우레아, 트리알릴이소시아누레이트, 2,2'-디알릴비스페놀 A 등의 알릴 화합물; Examples of the reactive double bond-containing compound include allylbenzene, diallylbenzene, triallylbenzene, allyloxybenzene, diallyloxybenzene, triallyloxybenzene, α, ω-diallyloxyalkane, α, ω-di Allyl alkenes, α, ω- diallyl alkenes, allylamine, diallylamine, triallylamine, N-allylphthalimide, N-allyl pyromellilimide, N, N'- diallylurea, triallyl Allyl compounds, such as isocyanurate and 2,2'-diallylbisphenol A;                     

스티렌, 디비닐벤젠, 트리비닐벤젠, 스틸벤, 프로페닐벤젠, 디프로페닐벤젠, 트리프로페닐벤젠, 페닐비닐케톤, 메틸스티릴케톤, α,ω-디비닐알칸류, α,ω-디비닐알켄류, α,ω-디비닐알킨류, α,ω-디비닐옥시알칸류, α,ω-디비닐알켄류, α,ω-디비닐알킨류, α,ω-디아크릴옥시알칸류, α,ω-디아크릴알켄류, α,ω-디아크릴알켄류, α,ω-디메타크릴옥시알칸류, α,ω-디메타크릴알켄류, α,ω-디메타크릴알켄류, 비스아크릴옥시벤젠, 트리스아크릴옥시벤젠, 비스메타크릴옥시벤젠, 트리스메타크릴옥시벤젠, N-비닐프탈이미드, N-비닐피로멜리트이미드 등의 비닐 화합물;Styrene, divinylbenzene, trivinylbenzene, stilbene, propenylbenzene, dipropenylbenzene, tripropenylbenzene, phenyl vinyl ketone, methyl styryl ketone, α, ω-divinyl alkanes, α, ω-di Vinyl alkenes, α, ω-divinyl alkynes, α, ω-divinyloxy alkanes, α, ω-divinyl alkenes, α, ω-divinyl alkynes, α, ω-diacryloxyalkanes , α, ω-diacrylic alkenes, α, ω-diacrylic alkenes, α, ω-dimethacryloxyalkanes, α, ω-dimethacrylic alkenes, α, ω-dimethacrylic alkenes, Vinyl compounds such as bisacryloxybenzene, trisacryloxybenzene, bismethacryloxybenzene, trismethacryloxybenzene, N-vinylphthalimide, and N-vinyl pyromellitimide;

2,2'-디알릴-4,4'-비페놀을 포함하는 폴리아릴렌에테르, 2,2'-디알릴-4,4'-비페놀을 포함하는 폴리아릴렌 등을 들 수 있다.The polyarylene ether containing 2,2'- diallyl-4, 4'- biphenol, the polyarylene containing 2,2'- diallyl-4, 4'- biphenol, etc. are mentioned.

이들은 1종 또는 2종 이상을 동시에 사용할 수도 있다.These can also use 1 type (s) or 2 or more types simultaneously.

반응성 삼중 결합 함유 화합물로서는 예를 들면 에티닐벤젠, 디에티닐벤젠, 트리에티닐벤젠, 트란트리메틸실릴에티닐벤젠, 트리메틸실릴에티닐벤젠, 비스(트리메틸실릴에티닐)벤젠, 트리스(트리메틸실릴에티닐)벤젠, 페닐에티닐벤젠, 비스(페닐에티닐)벤젠, 트리스(페닐에티닐)벤젠, 비스(에티닐페닐)에테르, 비스(트리메틸실릴에티닐페닐)에테르, 비스(페닐에티닐페닐)에테르 등을 들 수 있다.Examples of the reactive triple bond-containing compound include ethynylbenzene, dietynylbenzene, triethynylbenzene, transtrimethylsilylethynylbenzene, trimethylsilylethynylbenzene, bis (trimethylsilylethynyl) benzene, and tris (trimethylsilylethynyl ) Benzene, phenylethynylbenzene, bis (phenylethynyl) benzene, tris (phenylethynyl) benzene, bis (ethynylphenyl) ether, bis (trimethylsilylethynylphenyl) ether, bis (phenylethynylphenyl) ether Etc. can be mentioned.

이들은 1종 또는 2종 이상을 동시에 사용할 수도 있다. These can also use 1 type (s) or 2 or more types simultaneously.

본 발명에 있어서, 막형성용 조성물 중의 비점 100 ℃ 이하 알콜의 함량은 20 중량% 이하, 특히 5 중량% 이하인 것이 바람직하다. 비점 100 ℃ 이하의 알콜은 상기 (A) 성분의 가수분해 및(또는) 그 축합시에 발생하는 경우가 있으며, 그 함량이 20 중량% 이하, 바람직하게는 5 중량% 이하가 되도록 증류 등에 의해 제거하는 것이 바람직하다.In the present invention, the content of alcohol having a boiling point of 100 ° C. or lower in the film-forming composition is preferably 20% by weight or less, particularly 5% by weight or less. Alcohols having a boiling point of 100 ° C. or less may occur at the time of hydrolysis and / or condensation of the component (A), and are removed by distillation or the like so that the content thereof is 20% by weight or less, preferably 5% by weight or less. It is desirable to.

본 발명에서 사용하는 가수분해 축합물을 TFT의 게이트 절연막, 게이트 산화막, 게이트 전극 등의 기재에 도포할 때에는 스핀 코팅, 침지법, 롤 코팅법, 스프레이법 등의 도장 수단이 사용된다.When applying the hydrolysis-condensation product used by this invention to base materials, such as a gate insulating film, a gate oxide film, and a gate electrode of TFT, coating means, such as a spin coating method, an immersion method, a roll coating method, and a spray method, is used.

이 때의 막 두께는 건조막 두께로서 1회 도포로 두께 0.05 내지 2 ㎛ 정도, 2회 도포에서는 두께 0.1 내지 4 ㎛ 정도의 도포막을 형성할 수 있다. 그 후, 상온에서 건조하거나, 또는 80 내지 350 ℃ 정도의 온도에서 통상 2 내지 240분 정도 가열하여 건조함으로써 유리질 또는 거대 고분자의 절연막을 형성할 수 있다.The film thickness at this time can form a coating film with a thickness of about 0.05 to 2 m in one coating and a thickness of about 0.1 to 4 m in two coatings as a dry film thickness. Thereafter, the insulating film of glassy or macromolecular polymer may be formed by drying at room temperature or by heating at a temperature of about 80 to 350 ° C. for about 2 to 240 minutes.

이 때의 가열 방법으로서는 핫 플레이트, 오븐, 퍼니스 등을 사용할 수 있고, 가열 분위기로서는 대기하, 질소 분위기, 아르곤 분위기, 진공하, 산소 농도를 조절한 감압하 등에서 행할 수 있다.At this time, a hot plate, an oven, a furnace, etc. can be used as a heating method, As a heating atmosphere, it can carry out in air | atmosphere, nitrogen atmosphere, argon atmosphere, under vacuum, under reduced pressure which adjusted oxygen concentration.

또한, 전자선 및 자외선을 조사함으로써 도포막을 형성시킬 수도 있다.Moreover, a coating film can also be formed by irradiating an electron beam and an ultraviolet-ray.

이와 같이 하여 얻어지는 LCD용 층간 절연막은 저온도 형성이 가능하고, 저비유전율을 나타내며, 동시에 도포막의 내열성이 우수하기 때문에 비정질 실리콘 TFT형 LCD, 폴리 실리콘 TFT형 LCD의 층간 절연막 용도로 유용하다. The interlayer insulating film for LCD thus obtained can be formed at low temperature, exhibits low relative dielectric constant, and is excellent in heat resistance of the coating film.

<실시예><Example>

이하, 본 발명의 실시예를 들어 더욱 구체적으로 설명한다. 단, 이하의 기재는 본 발명의 태양례를 개괄적으로 나타내는 것으로 특별한 이유가 없으며, 이러한 기재에 의해 본 발명이 한정되는 것은 아니다. Hereinafter, the embodiment of the present invention will be described in more detail. However, the following description shows the example of this invention generally, and there is no special reason, and this invention is not limited by this description.                     

또한, 실시예 및 비교예 중의 "부" 및 "%"는 특별히 기재하지 않는 한, 각각 "중량부" 및 "중량%"를 나타낸다.In addition, "part" and "%" in an Example and a comparative example represent "weight part" and "weight%", respectively, unless there is particular notice.

또한, 각 종 평가는 다음과 같이 하여 행하였다.In addition, each evaluation was performed as follows.

중량 평균 분자량 (Mw)Weight average molecular weight (Mw)

하기 조건에 의한 겔 퍼미에이션 크로마토그래피 (GPC)법에 의해 측정하였다.It measured by the gel permeation chromatography (GPC) method by the following conditions.

시료: 테트라히드로푸란을 용매로서 사용하고, 가수분해 축합물 1 g을 100 cc의 테트라히드로푸란에 용해하여 제조하였다.Sample: Prepared by using tetrahydrofuran as a solvent and dissolving 1 g of hydrolysis condensate in 100 cc of tetrahydrofuran.

표준 폴리스티렌: 미국 프레셔 케미컬사 제조의 표준 폴리스티렌을 사용하였다.Standard polystyrene: Standard polystyrene manufactured by Pressure Chemical, USA was used.

장치: 미국 워터즈사 제조의 고온 고속 겔 침투 크로마토그램 (모델 150-C ALC/GPC)Apparatus: high temperature high speed gel permeation chromatogram (Model 150-C ALC / GPC), manufactured by Waters, USA

칼럼: 쇼와덴꼬(주) 제조의 SHODEX A-80M (길이 50 cm)Column: Showa Denko Corporation SHODEX A-80M (50 cm long)

측정 온도: 40 ℃Measuring temperature: 40 ℃

유속: 1 cc/분 Flow rate: 1 cc / min

비유전율Relative dielectric constant

8 인치(20.32 cm) 실리콘 웨이퍼 상에 스핀 코팅법을 사용하여 조성물 시료를 도포하고, 핫 플레이트 상에서 90 ℃로 3분간, 질소 분위기에서 200 ℃로 3 분간 기판을 건조하고, 350 ℃ 질소 분위기의 핫 플레이트에서 10분간 기판을 더 소성하였다. 얻어진 막에 대하여 증착법에 의해 알루미늄 전극 패턴을 형성시켜 비 유전율 측정용 샘플을 제작하였다. 이 샘플을 주파수 100 kHz의 주파수로, 요코가와·휴렛 팩커드(주) 제조의 HP16451B 전극 및 HP4284A 프레시젼 LCR 미터를 사용하여 CV법에 의해 해당 도포막의 비유전율을 측정하였다.A sample of the composition was applied using an spin coating method on an 8 inch (20.32 cm) silicon wafer, and the substrate was dried at 90 ° C. for 3 minutes on a hot plate and at 200 ° C. for 3 minutes on a hot plate. The substrate was further baked for 10 minutes in the plate. An aluminum electrode pattern was formed with respect to the obtained film by the vapor deposition method, and the sample for specific dielectric constant measurement was produced. The dielectric constant of this coating film was measured by CV method using the HP16451B electrode of the Yokogawa Hewlett-Packard Co., Ltd. product, and the HP4284A Precision LCR meter at the frequency of 100 kHz of this sample.

내열성Heat resistance

8 인치(20.32 cm) 실리콘 웨이퍼 상에 스핀 코팅법을 사용하여 조성물 시료를 도포하고, 핫 플레이트 상에서 90 ℃로 3분간, 질소 분위기 200 ℃에서 3분간 기판을 건조하고, 350 ℃의 질소 분위기 핫 플레이트에서 10분간 기판을 더 소성하였다. 얻어진 막을 웨이퍼로부터 절단하고, 질소 분위기 중에서 승온 속도 10 ℃/분의 조건으로 열중량 감소를 측정하여 이하의 기준으로 평가하였다. A composition sample was applied using an spin coating method on an 8 inch (20.32 cm) silicon wafer, dried on a hot plate for 3 minutes at 90 ° C., at 200 ° C. for 3 minutes, and at 350 ° C. for a nitrogen atmosphere hot plate. The substrate was further baked for 10 minutes at. The obtained film | membrane was cut out from the wafer, and thermogravimetric weight loss was measured on condition of the temperature increase rate of 10 degree-C / min in nitrogen atmosphere, and the following references | standards evaluated.

○: 400 ℃에서의 중량 감소가 1 % 이하○: 1% or less in weight loss at 400 ℃

×: 400 ℃에서의 중량 감소가 1 % 초과X: weight loss in 400 degreeC exceeds 1%

<합성예 1>Synthesis Example 1

석영제 세퍼러블 플라스크 중에서 메틸트리메톡시실란 276.01 g, 테트라메톡시실란 86.14 g 및 테트라키스(아세틸아세토네이토)티탄 0.0092 g을 프로필렌글리콜 모노에틸에테르 101 g에 용해시킨 후, 쓰리 원 모터로 교반시켜 용액 온도를 55 ℃로 안정시켰다. 이어서, 이온 교환수 225.52 g과 프로필렌글리콜 모노에틸에테르 263.00 g의 혼합 용액을 1시간에 걸쳐 용액에 첨가하였다. 그 후, 55 ℃에서 4시간 반응시킨 후, 아세틸아세톤 48.12 g을 첨가하여 30분간 더 반응시키고 반응액을 실온까지 냉각하였다. 50 ℃에서 반응액으로부터 메탄올과 물을 포함하는 용액을 227 g 증발 탈수법으로 제거하고, 반응액 ①을 얻었다. In a quartz separable flask, 276.01 g of methyltrimethoxysilane, 86.14 g of tetramethoxysilane and 0.0092 g of tetrakis (acetylacetonato) titanium were dissolved in 101 g of propylene glycol monoethyl ether, followed by stirring with a three-one motor. The solution temperature was stabilized at 55 ° C. Then, a mixed solution of 225.52 g of ion-exchanged water and 263.00 g of propylene glycol monoethyl ether was added to the solution over 1 hour. Then, after reacting at 55 degreeC for 4 hours, 48.12 g of acetylacetone were added, it was made to react for 30 more minutes, and the reaction liquid was cooled to room temperature. The solution containing methanol and water was removed from the reaction liquid at 50 degreeC by the 227g evaporative dehydration method, and reaction liquid (1) was obtained.                     

이와 같이 하여 얻어진 축합물 등의 중량 평균 분자량은 1,230이었다. Thus, the weight average molecular weights of condensates, etc. obtained were 1,230.

<합성예 2> Synthesis Example 2

석영제 세퍼러블 플라스크 중에서 메틸트리메톡시실란 205.50 g과 테트라메톡시실란 85.51 g을 프로필렌글리콜 모노에틸에테르 426 g에 용해시킨 후, 쓰리 원 모터로 교반시켜 용액 온도를 50 ℃로 안정시켰다. 이어서, 숙신산 0.63 g을 용해시킨 이온 교환수 182 g을 1시간에 걸쳐 용액에 첨가하였다. 그 후, 50 ℃에서 3시간 반응시킨 후, 반응액을 실온까지 냉각하였다. 50 ℃에서 반응액으로부터 메탄올을 포함하는 용액을 360 g 증발 탈수법으로 제거하고, 반응액 ②를 얻었다.In a quartz separable flask, 205.50 g of methyltrimethoxysilane and 85.51 g of tetramethoxysilane were dissolved in 426 g of propylene glycol monoethyl ether, and then stirred with a three-one motor to stabilize the solution temperature at 50 ° C. Next, 182 g of ion-exchanged water in which 0.63 g of succinic acid was dissolved was added to the solution over 1 hour. Then, after making it react at 50 degreeC for 3 hours, the reaction liquid was cooled to room temperature. The solution containing methanol was removed from the reaction liquid at 50 degreeC by the 360-g evaporation dehydration method, and reaction liquid (2) was obtained.

이와 같이 하여 얻어진 축합물 등의 중량 평균 분자량은 1,400이었다. Thus, the weight average molecular weights, such as the condensate obtained, were 1,400.

<합성예 3>Synthesis Example 3

석영제 세퍼러블 플라스크에 증류 에탄올 370 g, 증류 프로필렌글리콜 모노프로필에테르 200 g, 이온 교환수 160 g과 10 % 메틸아민 수용액 90 g을 넣고, 균일하게 교반하였다. 이 용액에 메틸트리메톡시실란 136 g과 테트라에톡시실란 209 g의 혼합물을 첨가하였다. 용액을 52 ℃로 유지한 채 2시간 반응을 행하였다. 이 용액에 프로필렌글리콜 모노프로필에테르 300 g을 첨가하고, 그 후 50 ℃의 증발기를 사용하여 용액을 10 % (완전 가수분해 축합물 환산)가 될 때까지 농축한 후, 아세트산의 10 % 프로필렌글리콜 모노프로필에테르 용액 10 g을 첨가하여 반응액 ③을 얻었다.370 g of distilled ethanol, 200 g of distilled propylene glycol monopropyl ether, 160 g of ion-exchanged water and 90 g of a 10% aqueous methylamine solution were added to a quartz separable flask and stirred uniformly. To this solution was added a mixture of 136 g of methyltrimethoxysilane and 209 g of tetraethoxysilane. The reaction was carried out for 2 hours while maintaining the solution at 52 ° C. 300 g of propylene glycol monopropyl ether was added to this solution, and the solution was then concentrated using an evaporator at 50 ° C until it became 10% (in terms of complete hydrolysis condensate), and then 10% propylene glycol mono of acetic acid. 10 g of propyl ether solution was added to obtain a reaction solution (3).

이와 같이 하여 얻어진 축합물 등의 중량 평균 분자량은 904,000이었다. Thus, the weight average molecular weights of the condensate etc. which were obtained were 904,000.

<합성예 4> Synthesis Example 4                     

석영제 세퍼러블 플라스크에 증류 에탄올 428 g, 이온 교환수 215 g과 25 % 테트라메틸암모늄히드록시드 수용액 15.6 g을 넣고 균일하게 교반하였다. 이 용액에 메틸트리메톡시실란 40.8 g과 테트라에톡시실란 61.4 g의 혼합물을 첨가하였다. 용액을 57 ℃로 유지한 채 2시간 반응을 행하였다. 이 용액에 프로필렌글리콜 모노프로필에테르 300 g을 첨가하고, 그 후 50 ℃의 증발기를 사용하여 용액을 10 % (완전 가수분해 축합물 환산)가 될 때까지 농축한 후, 말레산의 10 % 프로필렌글리콜 모노프로필에테르 용액 20 g을 첨가하여 반응액 ④를 얻었다.428 g of distilled ethanol, 215 g of ion-exchanged water, and 15.6 g of 25% tetramethylammonium hydroxide aqueous solution were added to a quartz separable flask, and the mixture was stirred uniformly. To this solution was added a mixture of 40.8 g of methyltrimethoxysilane and 61.4 g of tetraethoxysilane. The reaction was carried out for 2 hours while maintaining the solution at 57 ° C. 300 g of propylene glycol monopropyl ether was added to this solution, and the solution was then concentrated using an evaporator at 50 ° C until it became 10% (complete hydrolysis condensate), and then 10% propylene glycol of maleic acid. 20 g of monopropyl ether solution was added to obtain a reaction solution ④.

이와 같이 하여 얻어진 축합물 등의 중량 평균 분자량은 1,600,000이었다. Thus, the weight average molecular weights of condensates, etc. obtained were 1,600,000.

<비교 합성예 1> Comparative Synthesis Example 1

석영제 세퍼러블 플라스크 중에서 테트라메톡시실란 85.51 g을 프로필렌글리콜 모노에틸에테르 426 g에 용해시킨 후, 쓰리 원 모터로 교반시켜 용액 온도를 50 ℃로 안정시켰다. 이어서, 숙신산 0.63 g을 용해시킨 이온 교환수 182 g을 1시간에 걸쳐 용액에 첨가하였다. 그 후, 50 ℃에서 3시간 반응시킨 후, 반응액을 실온까지 냉각하였다. 50 ℃에서 반응액으로부터 메탄올을 포함하는 용액을 360 g 증발 탈수법으로 제거하고, 반응액 ⑤를 얻었다.After dissolving 85.51 g of tetramethoxysilane in 426 g of propylene glycol monoethyl ether in the separable flask made of quartz, the solution temperature was stabilized at 50 degreeC by stirring with a three-one motor. Next, 182 g of ion-exchanged water in which 0.63 g of succinic acid was dissolved was added to the solution over 1 hour. Then, after making it react at 50 degreeC for 3 hours, the reaction liquid was cooled to room temperature. The solution containing methanol was removed from the reaction liquid at 50 degreeC by the 360-g evaporation dehydration method, and reaction liquid (5) was obtained.

이와 같이 하여 얻어진 축합물 등의 중량 평균 분자량은 2,400이었다. Thus, the weight average molecular weights of condensates, etc. obtained were 2,400.

<실시예 1> <Example 1>

합성예 3에서 얻어진 반응액 ③을 0.2 ㎛ 공경의 테플론제 필터로 여과하여 본 발명의 막형성용 조성물을 얻었다.The reaction solution 3 obtained in Synthesis Example 3 was filtered with a teflon filter having a 0.2 μm pore diameter to obtain a film-forming composition of the present invention.

얻어진 조성물을 스핀 코팅법으로 실리콘 웨이퍼 상에 도포하였다. The obtained composition was applied onto a silicon wafer by spin coating.                     

도포막의 비유전율은 2.57로 낮은 비유전율 값을 나타내었다. 또한, 도포막의 내열성을 평가했더니 중량 감소는 1 % 이하였다.The relative dielectric constant of the coating film was 2.57, indicating a low relative dielectric constant value. Moreover, when the heat resistance of the coating film was evaluated, the weight loss was 1% or less.

<실시예 2 내지 6> <Examples 2 to 6>

실시예 1에 있어서, 표 1에 나타낸 반응액을 사용한 것 이외는 실시예 1과 동일하게 평가하였다. 평가 결과를 표 1에 함께 나타내었다.In Example 1, it evaluated like Example 1 except having used the reaction liquid shown in Table 1. The evaluation results are shown in Table 1 together.

실시예Example (A) 성분(A) component 비유전율Relative dielectric constant 내열성Heat resistance 1One 반응액③Reaction solution 2.572.57 O 22 반응액④Reaction liquid 2.342.34 O 33 반응액③ 30 g + 반응액① 10 gReaction liquid ③ 30 g + reaction liquid ① 10 g 2.652.65 O 44 반응액③ 30 g + 반응액② 10 gReaction liquid ③ 30 g + reaction liquid ② 10 g 2.692.69 O 55 반응액④ 30 g + 반응액① 20 gReaction solution ④ 30 g + reaction solution ① 20 g 2.782.78 O 66 반응액④ 30 g + 반응액① 20 gReaction solution ④ 30 g + reaction solution ① 20 g 2.822.82 O

<실시예 7> <Example 7>

붕소 규산 유리로 이루어지는 투명한 유리판 (코닝사 제조 7059)을 두장 준비한다.Two sheets of transparent glass plates (7059 manufactured by Corning Incorporated) consisting of boron silicate glass are prepared.

이어서, 이 한장에 공지된 방법에 의해 도 1에 나타낸 바와 같은 TFT 어레이 기판 (10)을 제작하였다.Subsequently, the TFT array substrate 10 as shown in FIG. 1 was produced by the method known in this one sheet.

도 1은, 도면 제작의 형편상 1개의 TFT 부분을 예로 들어 묘사한 TFT 어레이 기판의 단면 개념도이다. 도 1 중에서 부호 (1)은 유리 기판, (2)는 상기 기판 상에 형성된 막 두께 400 nm의 하층막, (3)은 게이트 전극, (4)는 게이트 절연막, (5)는 비정질 실리콘으로 이루어지는 반도체막 (단, 폴리실리콘막일 수도 있다), (5')는 n형 불순물을 확산시킨 n+층, (6)은 실시예 1에서 사용한 절연막, (7)은 소스 배선, (8)은 드레인 배선, (8')는 화소 전극이고, (8')는 전기 드레인 배선과 접속되어 있다.1 is a cross-sectional conceptual view of a TFT array substrate in which one TFT portion is described as an example for convenience of drawing production. In Fig. 1, reference numeral 1 denotes a glass substrate, 2 denotes an underlayer film having a thickness of 400 nm formed on the substrate, 3 denotes a gate electrode, 4 denotes a gate insulating film, and 5 denotes amorphous silicon. The semiconductor film (may be a polysilicon film), (5 ') is an n + layer in which n-type impurities are diffused, (6) is an insulating film used in Example 1, (7) is source wiring, and (8) is drain wiring (8 ') is a pixel electrode, and (8') is connected with an electric drain wiring.

다른쪽의 유리판을 상기 기판 (10)에 대향하는 이면의 기판으로 하고, 공지된 방법에 의해 이 유리판 (11) 상에 인듐 주석 산화물로 이루어지는 투명 대향 전극 (11)을 형성하였다. 이와 같이 하여 도 2에 나타낸 대향 기판 (20)을 제작하였다.The other glass plate was made into the board | substrate of the back surface which opposes the said board | substrate 10, and the transparent counter electrode 11 which consists of indium tin oxide was formed on this glass plate 11 by a well-known method. In this way, the counter substrate 20 shown in FIG. 2 was produced.

그 후, 상기 TFT 어레이 기판 (10)의 표면 및 대향 기판 (20)의 표면에 각각 액정 배향막 (22)를 형성하였다. 이어서, 두 기판을 액정 배향막 (22·22)을 내측으로 하고, 동시에 5 ㎛의 간격을 유지하여 전체를 4 분할하는 영역의 주변이 접착될 수 있도록 중첩시킨 액정 표시 소자용 빈 셀 4개를 제작하였다. Then, the liquid crystal aligning film 22 was formed in the surface of the said TFT array substrate 10, and the surface of the opposing board | substrate 20, respectively. Subsequently, four empty cells for the liquid crystal display device were fabricated, in which two substrates were laminated so that the liquid crystal alignment film 22 · 22 was inward, and at the same time maintained a gap of 5 μm so that the periphery of the four divided regions could be bonded. It was.

그 후, 진공 중에서 상기 빈 셀에 트위스티드 네마틱(TN)형 액정 (23) (ZLI-4792; 멜크사 제조)을 주입하여 셀을 밀봉하고, 액정 셀 (30)으로 한 후, 이 액정 셀 양면에 편광판 (24)를 접착해 도 3에 나타낸 LCD (31)을 제작하였다.Thereafter, a twisted nematic (TN) type liquid crystal 23 (ZLI-4792; manufactured by Melk Co., Ltd.) was injected into the empty cell in a vacuum to seal the cell, and then the liquid crystal cell 30 was formed. The polarizing plate 24 was stuck to and the LCD 31 shown in FIG. 3 was produced.

이 LCD에 60 μsec, 30Hz, 2.6 V의 교류 펄스파와 2 V의 바이어스 전압을 30시간 인가하였다. 그 후 2 V의 바이어스 전압을 제거했을 때 LCD에 생기는 플리커의 경시 변화를 광학적으로 측정하였다. 플리커는 바이어스 전압 제거 후 2.1초 후에 소거되어, 우수한 플리커 내성을 나타내었다.An AC pulse wave of 60 µsec, 30 Hz, 2.6 V and a bias voltage of 2 V were applied to this LCD for 30 hours. After that, when the 2V bias voltage was removed, the change over time of the flicker on the LCD was measured optically. Flicker cleared 2.1 seconds after bias voltage removal, indicating good flicker resistance.

<실시예 8> <Example 8>

실시예 7에 있어서, 절연막으로서 실시예 2에서 사용한 절연막을 사용한 것 이외는, 실시예 7과 동일하게 LCD의 플리커를 측정하였다. 플리커는 바이어스 전압 제거 후 1.7초 후에 소거되어, 우수한 플리커 내성을 나타내었다. In Example 7, the flicker of the LCD was measured in the same manner as in Example 7, except that the insulating film used in Example 2 was used as the insulating film. Flicker was erased 1.7 seconds after bias voltage removal, indicating good flicker resistance.                     

<실시예 9> Example 9

실시예 7에 있어서, 절연막으로서 실시예 3에서 사용한 절연막을 사용한 것 이외는, 실시예 7과 동일하게 LCD의 플리커를 측정하였다. 플리커는 바이어스 전압 제거 후 2.1초 후에 소거되어, 우수한 플리커 내성을 나타내었다.In Example 7, the flicker of the LCD was measured in the same manner as in Example 7, except that the insulating film used in Example 3 was used as the insulating film. Flicker cleared 2.1 seconds after bias voltage removal, indicating good flicker resistance.

<실시예 10><Example 10>

실시예 7에 있어서, 절연막으로서 실시예 4에서 사용한 절연막을 사용한 것 이외는, 실시예 7과 동일하게 LCD의 플리커를 측정하였다. 플리커는 바이어스 전압 제거 후 2.2초 후에 소거되어, 우수한 플리커 내성을 나타내었다.In Example 7, the flicker of the LCD was measured in the same manner as in Example 7, except that the insulating film used in Example 4 was used as the insulating film. Flicker cleared 2.2 seconds after bias voltage removal, indicating good flicker resistance.

<실시예 11><Example 11>

실시예 7에 있어서, 절연막으로서 실시예 5에서 사용한 절연막을 사용한 것 이외는, 실시예 7과 동일하게 LCD의 플리커를 측정하였다. 플리커는 바이어스 전압 제거 후 2.3초 후에 소거되어, 우수한 플리커 내성을 나타내었다.In Example 7, the flicker of the LCD was measured in the same manner as in Example 7, except that the insulating film used in Example 5 was used as the insulating film. Flicker was erased 2.3 seconds after bias voltage removal, indicating good flicker resistance.

<실시예 12><Example 12>

실시예 7에 있어서, 절연막으로서 실시예 6에서 사용한 절연막을 사용한 것 이외는, 실시예 7과 동일하게 LCD의 플리커를 측정하였다. 플리커는 바이어스 전압 제거 후 2.4초 후에 소거되어, 우수한 플리커 내성을 나타내었다.In Example 7, the flicker of the LCD was measured in the same manner as in Example 7, except that the insulating film used in Example 6 was used as the insulating film. Flicker was erased 2.4 seconds after bias voltage removal, indicating good flicker resistance.

<비교예 1> Comparative Example 1

비교 합성예 1에서 얻어진 반응액 ⑤를 사용한 것 이외는, 실시예 1과 동일하게 하여 도포막을 평가하였다.Except having used reaction liquid (5) obtained by the comparative synthesis example 1, it carried out similarly to Example 1, and evaluated the coating film.

도포막의 비유전율은 3.68로 비유전율이 3을 초과하는 것이었다. 또한, 도 포막의 내열성을 평가했더니, 400 ℃에서의 중량 감소는 1.3 %로 떨어지는 것이었다. The relative dielectric constant of the coating film was 3.68 and the relative dielectric constant exceeded 3. Moreover, when the heat resistance of the coating film was evaluated, the weight loss in 400 degreeC fell to 1.3%.

<비교예 2> Comparative Example 2

실시예 7에 있어서, 절연막으로서 비교예 1에서 사용한 절연막을 사용한 것 이외는, 실시예 7과 동일하게 LCD의 플리커를 측정하였다. 플리커는 바이어스 전압 제거 후 15.3초 후에 소거되어, 플리커 내성이 떨어지는 것이었다.In Example 7, the flicker of the LCD was measured in the same manner as in Example 7, except that the insulating film used in Comparative Example 1 was used as the insulating film. Flicker was erased 15.3 seconds after bias voltage removal, resulting in poor flicker tolerance.

<비교예 3> Comparative Example 3

실시예 7에 있어서, 절연막으로서 화학 증착법으로 제작한 SiO2막을 사용한 것 이외는, 실시예 7과 동일하게 LCD의 플리커를 측정하였다. 플리커는 바이어스 전압 제거 후 120초 후에 소거되어, 플리커 내성이 떨어지는 것이었다.In Example 7, the flicker of the LCD was measured in the same manner as in Example 7, except that a SiO 2 film produced by a chemical vapor deposition method was used as the insulating film. Flicker was erased 120 seconds after bias voltage removal, resulting in poor flicker tolerance.

본 발명에 따르면, 특정한 알콕시실란 가수분해 중합체를 가열함으로써 저온도 형성이 가능하고, 저비유전율을 나타내며, 동시에 도포막의 내열성이 우수한 LCD용 층간 절연막을 제공할 수 있다.




According to the present invention, an interlayer insulating film for LCD can be provided by heating a specific alkoxysilane hydrolyzable polymer, which can form a low temperature, exhibits a low dielectric constant, and is excellent in heat resistance of a coating film.




Claims (5)

(A) (A-1) 하기 화학식 1로 표시되는 화합물, (A-2) 하기 화학식 2로 표시되는 화합물, 및 (A-3) 하기 화학식 3으로 표시되는 화합물의 군에서 선택된 1종 이상의 화합물을 촉매 존재하에서 가수분해 축합하여 이루어지는 가수분해 축합물을 가열함으로써 얻어지는 액정 표시 소자용 층간 절연막. (A) (A-1) at least one compound selected from the group of compounds represented by formula (1), (A-2) compounds represented by formula (2), and (A-3) compounds represented by formula (3) The interlayer insulation film for liquid crystal display elements obtained by heating the hydrolysis condensate formed by hydrolytic condensation in the presence of a catalyst. <화학식 1><Formula 1> RaSi(OR1)4-a R a Si (OR 1 ) 4-a <화학식 2><Formula 2> Si(OR2)4 Si (OR 2 ) 4 <화학식 3><Formula 3> R3 b(R4O)3-bSi-(R7)d-Si(OR5) 3-cR6 c R 3 b (R 4 O) 3-b Si- (R 7 ) d -Si (OR 5 ) 3-c R 6 c 식 중, In the formula, R은 수소 원자, 불소 원자 또는 1가의 유기기이고, R is a hydrogen atom, a fluorine atom or a monovalent organic group, R1은 1가의 유기기이며, R 1 is a monovalent organic group, a는 1 내지 2의 정수를 나타내고, a represents an integer of 1 to 2, R2는 1가의 유기기를 나타내고,R 2 represents a monovalent organic group, R3 내지 R6은 동일하거나 또는 상이하며 각각 1가의 유기기이고,R 3 to R 6 are the same or different and are each monovalent organic group, b 내지 c는 동일하거나 또는 상이하며 0 내지 2의 정수이고, b to c are the same or different and are an integer from 0 to 2, R7은 산소 원자, 페닐렌기 또는 -(CH2)n-으로 표시되는 기 (여기서, n은 1 내지 6의 정수임)이고, R 7 is an oxygen atom, a phenylene group or a group represented by-(CH 2 ) n- , where n is an integer from 1 to 6, d는 0 또는 1을 나타낸다. d represents 0 or 1. 제1항에 있어서, 가수분해 축합물의 가열 온도가 350 ℃ 이하인 것을 특징으로 하는 액정 표시 소자용 절연막.The heating temperature of a hydrolysis-condensation product is 350 degrees C or less, The insulating film for liquid crystal display elements of Claim 1 characterized by the above-mentioned. 제1항 또는 제2항에 있어서, 비유전율이 3 이하인 것을 특징으로 하는 액정 표시 소자용 층간 절연막. The interlayer insulating film for liquid crystal display elements according to claim 1 or 2, wherein the relative dielectric constant is 3 or less. 제1항 또는 제2항에 있어서, 촉매가 알칼리 촉매인 것을 특징으로 하는 액정 표시 소자용 층간 절연막.The interlayer insulating film for liquid crystal display device according to claim 1 or 2, wherein the catalyst is an alkali catalyst. 제1항 또는 제2항에 기재된 액정 표시 소자용 층간 절연막을 갖는 액정 표시 소자.The liquid crystal display element which has the interlayer insulation film for liquid crystal display elements of Claim 1 or 2.
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