KR100752446B1 - Composition for Removing Polymer Residue of Photosensitive Resistive Etching Film - Google Patents
Composition for Removing Polymer Residue of Photosensitive Resistive Etching Film Download PDFInfo
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- KR100752446B1 KR100752446B1 KR1020050129712A KR20050129712A KR100752446B1 KR 100752446 B1 KR100752446 B1 KR 100752446B1 KR 1020050129712 A KR1020050129712 A KR 1020050129712A KR 20050129712 A KR20050129712 A KR 20050129712A KR 100752446 B1 KR100752446 B1 KR 100752446B1
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- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 238000005530 etching Methods 0.000 title description 3
- 229920000642 polymer Polymers 0.000 title 1
- 230000007797 corrosion Effects 0.000 claims abstract description 39
- 238000005260 corrosion Methods 0.000 claims abstract description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 21
- 239000003112 inhibitor Substances 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 11
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims abstract description 9
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000001412 amines Chemical class 0.000 claims description 14
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 7
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 230000006378 damage Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 abstract description 5
- YNOGYQAEJGADFJ-UHFFFAOYSA-N oxolan-2-ylmethanamine Chemical compound NCC1CCCO1 YNOGYQAEJGADFJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- -1 alcohol amines Chemical class 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000003440 toxic substance Substances 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910019044 CoSix Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000008366 buffered solution Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/16—Sulfur-containing compounds
- C23F11/165—Heterocyclic compounds containing sulfur as hetero atom
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
본 발명은 감광성 내식각막의 잔사제거용 조성물을 제공한다. 본 발명에 따른 감광성 내식각막의 잔사제거용 조성물은 테트라히드로퍼퓨릴 알코올 또는 테트라히드로퍼퓨릴 아민에서 선택된 부식 억제제 10 내지 80중량%; 수소이온농도가 약염기 영역인 pH 조절제 10 내지 80중량%; 암모늄 플로라이드 0.1 내지 2중량%; 및 잔량 물을 포함한다. 이와 같은 조성의 잔사제거용 조성물은 반도체 제조 공정에서 발생되는 불용성 잔사를 하부막에 대한 어떠한 손상도 없이 완벽히 제거할 수 있으며, 구성성분이 친환경적이어서 안전하게 사용될 수 있다.The present invention provides a composition for removing residues of the photoresist. The composition for removing residues of the photoresist according to the present invention comprises 10 to 80% by weight of a corrosion inhibitor selected from tetrahydrofurfuryl alcohol or tetrahydrofurfuryl amine; 10 to 80% by weight of pH adjusting agent having a hydrogen ion concentration in the weak base region; Ammonium fluoride 0.1 to 2% by weight; And residual water. The composition for removing residues of such a composition can completely remove the insoluble residue generated in the semiconductor manufacturing process without any damage to the underlying film, and the components are environmentally friendly and can be used safely.
내식각막, 잔사, 감광성 Corrosion resistance, residue, photosensitive
Description
도 1은 비교예 1의 조성물로 처리된 금속배선 웨이퍼의 처리 전 및 후의 SEM 사진이다.1 is a SEM photograph before and after the treatment of a metallization wafer treated with the composition of Comparative Example 1.
도 2는 본 발명에 따른 실시예 1의 조성물로 처리된 금속배선 웨이퍼의 처리 전 및 후의 SEM 사진이다.2 is a SEM photograph before and after the treatment of the metallization wafer treated with the composition of Example 1 according to the present invention.
도 3은 본 발명에 따른 실시예 2의 조성물로 처리된 패드 웨이퍼의 처리 전 및 후의 SEM 사진이다.3 is a SEM photograph before and after the treatment of the pad wafer treated with the composition of Example 2 according to the present invention.
도 4는 본 발명에 따른 실시예 3의 조성물로 처리된 금속배선 웨이퍼의 처리 전 및 후의 SEM 사진이다.4 is a SEM photograph before and after the treatment of the metallization wafer treated with the composition of Example 3 according to the present invention.
도 5는 본 발명에 따른 실시예 4 및 5의 조성물로 처리된 패드 웨이퍼의 처리 후의 SEM 사진이다. 5 is a SEM photograph after treatment of a pad wafer treated with the compositions of Examples 4 and 5 according to the present invention.
본 발명은 감광성 내식각막의 잔사제거용 조성물에 관한 것이다. 보다 상세하게는 잔사제거 능력이 뛰어나면서 친환경적인 감광성 내식각막의 잔사제거용 조 성물에 관한 것이다.The present invention relates to a composition for removing residues of a photoresist. More particularly, the present invention relates to a composition for removing residue of an environmentally friendly photoresist having excellent residue removal ability.
반도체 제조 공정은 금속배선 또는 콘택트 포인트(Contact Point)의 형성을 위한 광, 건식 식각 또는 습식 식각, 그리고 플라즈마 애싱(ashing) 등의 일련의 공정에서 유기성 또는 금속성 잔사들(residue)을 발생시킨다. 따라서, 후공정을 진행시키기 위해서는 이러한 불필요한 잔사들을 미리 제거해야만 한다. Semiconductor manufacturing processes generate organic or metallic residues in a series of processes such as light, dry or wet etching, and plasma ashing for the formation of metallization or contact points. Therefore, in order to proceed with the post-process, these unnecessary residues must be removed in advance.
이런 잔사들을 제거하기 위하여 히드록실아민, 알코올 아민류, 물 및 부식 억제제로 이루어지는 조성물을 이용하여 60 내지 85℃의 고온하에서 잔사를 제거하여 왔다. 그러나 이러한 아민류를 포함한 조성물은 물에 의한 세정 공정에서 수산화이온을 발생시키기 때문에 부식방지를 위하여 이소프로필알코올(IPA)을 중간세정제(intermediate rinse)로 이용하고 있다. In order to remove these residues, the residues have been removed at a high temperature of 60 to 85 ° C using a composition consisting of hydroxylamine, alcohol amines, water and a corrosion inhibitor. However, since the composition containing such amines generates hydroxide ions in the washing process with water, isopropyl alcohol (IPA) is used as an intermediate rinse to prevent corrosion.
현재 대표적인 제품으로는 ACT사(社)의 ACT-935와 듀퐁사의 EKC-265등이 있다. 그렇지만 일반적으로 이들 조성물들은 갈바닉(galvanic)에 의한 부식과 독성에 의하여 그 적용성에 한계를 갖고 있다. Representative products include ACT-935 of ACT and EKC-265 of DuPont. In general, however, these compositions have limited applicability due to galvanic corrosion and toxicity.
최근에는 세정장비의 발전과 반도체 선폭의 미세화에 대응하여 플루오린(fluorine)을 사용하는 새로운 조성들이 출시되고 있으며, 이는 기존의 반도체 제조공정 중에 이용되고 있는 DHF(dilute hydrofluoric acid) 또는 BOE(HF와 암모니움 플루오라이드 혼합액) 세정을 근간으로 하여 극성용매 및 부식 억제제를 첨가하여 상온(20 내지 30℃)에서 진행하며, 중간세정제가 필요 없다는 장점을 갖는 반면에 패턴의 산화물 공격(oxide attack)에 대한 관리가 요구된다는 문제점을 갖는다.In recent years, new compositions using fluorine have been released in response to the development of cleaning equipment and the miniaturization of semiconductor line widths. These include dilute hydrofluoric acid (DHF) or BOE (HF), which are used in the existing semiconductor manufacturing process. Ammonium fluoride mixture) proceeds at room temperature (20 to 30 ° C) by adding a polar solvent and corrosion inhibitor based on cleaning, and has the advantage of not requiring an intermediate cleaner, while the pattern against oxide attack There is a problem that management is required.
이와 같이 종래에 사용되는 잔사제거용 조성물에는 하부층의 부식 또는 갈바 닉 반응에 의한 금속배선의 손상 등이 빈번히 발생하여 전기저항치에 막대한 영향을 끼치고 있으며, 또한 웨이퍼 표면에 잔사제거 조성물로부터 재부착되는 파티클에 의한 영향으로 반도체 소자의 수율을 저하시키는 등의 문제점이 상존하고 있다. 또한 이들 조성물들은 독성물을 함유하여 인간의 건강에 해를 끼칠 수 있으며, 이는 일반적으로 사용되는 부식 억제제가 페놀류인 것에 기인하며, 이러한 것들의 예로는 카테콜, 피로갈롤 등이 있으며, 또한 조성물 중의 극성용매로 사용되는 아미드류 또는 아민류 등도 독성물질에 포함된다. As such, the residue removal composition used in the prior art frequently causes damage to metal wiring due to corrosion of the lower layer or galvanic reaction, and has an enormous effect on the electrical resistance value, and particles reattached from the residue removal composition to the wafer surface. There is a problem such as lowering the yield of a semiconductor element due to the influence. These compositions also contain toxic substances that can harm human health, due to the corrosion inhibitors commonly used are phenols, examples of which include catechol, pyrogallol and the like. Amides or amines used as polar solvents are also included in the toxic substances.
상기 아미드류 또는 아민류는 기본적으로 건식식각 잔사를 안정적으로 제거하기 위하여 수소이온농도가 일정하게 유지되는 pH 완충용액(pH buffering)에 사용되며, 기존 히드록실아민(hydroxylamine)의 경우는 MEA(모노에탄올아민)등의 알칸올아민과 물의 혼합에 의해서 수소이온을 완충시켜주며, 플루오린(fluorine)의 경우도 유기산과 아민류의 혼합에 의해서 산성 또는 염기성의 완충용액을 만들어 준다. 그러나 아민류는 금속을 부식시키고, 위에서 설명한 바와 같이 독성으로 인해 친환경적 조성물을 만들 수 없다는 문제점을 갖는다.The amides or amines are basically used in pH buffering in which hydrogen ion concentration is maintained to stably remove dry etching residues, and MEA (monoethanol) in the case of conventional hydroxylamine Hydrogen ions are buffered by mixing alkanolamines such as amines) with water, and fluorine also makes acidic or basic buffered solutions by mixing organic acids and amines. However, amines have a problem of corrosive metals and the inability to make environmentally friendly compositions due to toxicity as described above.
따라서, 본 발명자들은 반도체 제조공정중 발생되는 잔사(residue)를 반도체 웨이퍼상의 티타늄(Ti), 티타늄나이트라이드(TiN), 텅스텐(W), 텅스텐나이트라이드(WN), 알루미늄(Al), 구리(Cu), 텅스텐실리사이드(WSix), 코발트실리사이드(CoSix) 및 등등을 포함하는 금속성 하부막의 어떠한 손상 없이 제거할 수 있으면서, 동시에 친환경적인 조성의 세정제를 개발하기 위한 연구를 진행하면서, 기존의 부식억제제인 페놀류 대신 테트라히드로퍼퓨릴 알코올류를 사용하고, 기존의 아민계 pH 조절제 대신 디에틸렌글리콜 모노에틸에테르를 pH 조절제로 사용한 잔사제거용 조성물이 반도체 제조공정 중에 발생하는 불용성 잔사에 대한 제거능력이 뛰어나면서 중간 세정 공정이 필요 없고, 동시에 무독성임을 발견하고 본 발명을 완성하였다.Therefore, the inventors of the present invention, the residue (residue) generated during the semiconductor manufacturing process to the titanium (Ti), titanium nitride (TiN), tungsten (W), tungsten nitride (WN), aluminum (Al), copper ( Existing corrosion inhibitors, while researching to develop an eco-friendly cleaning agent that can be removed without any damage to the metallic underlayer including Cu), tungsten silicide (WSix), cobalt silicide (CoSix) and the like. Tetrahydroperfuryl alcohols are used instead of phenols, and the residue removal composition using diethylene glycol monoethyl ether as a pH regulator instead of the conventional amine pH regulator has excellent ability to remove insoluble residues generated during the semiconductor manufacturing process. The intermediate cleaning process was not required and at the same time found to be non-toxic and completed the present invention.
따라서, 본 발명의 기술적 과제는 반도체 제조공정, 특히 금속 식각 및 비아(via) 또는 패드(pad) 콘택트 식각(건조 식각) 후 발생되는 잔사들을 하부막에 어떠한 손상도 없이 제거할 수 있는 감광성 내식각막의 잔사제거용 조성물을 제공하는 것이다.Accordingly, a technical problem of the present invention is that a photoresist can be removed without any damage to the underlying film after the semiconductor manufacturing process, in particular, metal etching and via or pad contact etching (dry etching). It is to provide a composition for removing residues.
상기 기술적 과제를 달성하기 위해, 본 발명은 In order to achieve the above technical problem, the present invention
하기 화학식 1의 부식 억제제 0.1 내지 80중량%; 0.1 to 80% by weight of a corrosion inhibitor of Formula 1;
수소이온 농도가 약염기 영역인 pH 조절제 10 내지 80중량%; 10 to 80% by weight of pH adjuster having a hydrogen ion concentration in the weak base region;
암모늄 플로라이드 0.1 내지 2중량%; 및 Ammonium fluoride 0.1 to 2% by weight; And
잔량 물을 포함하는 감광성 내식각막의 잔사제거용 조성물을 제공한다:There is provided a composition for removing residues of a photoresist containing a residual amount of water:
상기 식에서, X는 -OH 또는 -NH2이다.Wherein X is -OH or -NH 2 .
본 발명에 따른 감광성 내식각막의 잔사제거용 조성물에서, 부식 억제제로는 테트라히드로퍼퓨릴 알코올 또는 테트라히드로퍼퓨릴 아민이 바람직하다.In the composition for removing residues of the photoresist according to the present invention, as the corrosion inhibitor, tetrahydroperfuryl alcohol or tetrahydroperfuryl amine is preferable.
본 발명에 따른 감광성 내식각막의 잔사제거용 조성물에서, pH 조절제로는 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노에틸에테르, 디에틸렌글리콜 모노부틸에테르로 이루어진 군에서 선택되는 것이 바람직하다. In the composition for removing residues of the photoresist according to the present invention, the pH adjusting agent is preferably selected from the group consisting of diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and diethylene glycol monobutyl ether.
또한, 본 발명에 따른 감광성 내식각막의 잔사제거용 조성물은 그의 pH가 7.5 내지 8.5인 것이 바람직하다.In addition, the composition for removing residues of the photoresist according to the present invention preferably has a pH of 7.5 to 8.5.
이하, 본 발명을 더욱 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명에 따른 감광성 내식각막의 잔사제거용 조성물은 상기 화학식 1의 부식 억제제 0.1 내지 80중량%; 수소이온 농도가 약염기 영역인 pH 조절제 10 내지 80중량%; 암모늄 플로라이드 0.1 내지 2중량%; 및 잔량 물을 포함한다.The composition for removing residues of the photoresist according to the present invention comprises 0.1 to 80% by weight of a corrosion inhibitor of Chemical Formula 1; 10 to 80% by weight of pH adjuster having a hydrogen ion concentration in the weak base region; Ammonium fluoride 0.1 to 2% by weight; And residual water.
상기 화학식 1의 부식 억제제는 기존이 부식 억제제인 페놀에 비해 무독성이며, pH에 따른 큰 변화가 없기 때문에 바람직하게 사용될 수 있다. 상기 부식 억제제의 바람직한 예로는 X가 -OH인 테트라히드로퍼퓨릴 알코올 또는 X가 NH2인 테트라히드로퍼퓨릴 아민이 있으며, 보다 바람직하게는 테트라히드로퍼퓨릴 알코올이다. Corrosion inhibitor of the formula (1) is non-toxic compared to the conventional corrosion inhibitor phenol, and can be preferably used because there is no large change with pH. Preferred examples of the corrosion inhibitor include tetrahydrofurfuryl alcohol in which X is -OH or tetrahydroperfuryl amine in which X is NH 2 , more preferably tetrahydrofurfuryl alcohol.
이와 같은 부식 억제제는 플루오린에 의해 발생되는 갈바닉에 의한 금속 부식과 실리콘산화물의 손상을 최소화할 수 있다. 이는 테트라히드로퍼퓨릴 알코올 및 테트라히드로퍼퓨릴 아민을 하기 화학식 2 내지 3으로 나타낸 바와 같이 하부막의 금속 또는 산화물층과의 배위결합을 통해 표면에 유기 보호막을 형성하기 때문에 플루오린에 의한 부식과 손상을 방지하게 된다. 이들 유기막은 물과 잘 섞이므로 후속 공정인 물에 의한 세정에 의해서 용이하게 제거될 수 있다.Such corrosion inhibitors can minimize metal corrosion and silicon oxide damage caused by galvanic caused by fluorine. This prevents corrosion and damage caused by fluorine because tetrahydroperfuryl alcohol and tetrahydrofurfuryl amine form an organic protective film on the surface through coordination bonds with the metal or oxide layer of the lower film as shown in the following Chemical Formulas 2 to 3. Will be prevented. Since these organic films mix well with water, they can be easily removed by the subsequent washing with water.
상기 부식 억제제는 전체 조성물의 중량을 기초로 하여 0.1 내지 80중량%의 범위내에서 사용되는 것이 바람직하며, 0.1중량% 미만을 사용하는 경우 부식 방지 효과가 미비하여 바람직하지 않으며, 다른 조성물의 혼합율을 고려했을 때 80중량%를 초과하여 첨가할 수는 없다. 보다 구체적으로 테트라히드로퍼퓨릴 알코올의 경우 사용량이 증가할수록 부식 억제효과가 좋으나, 테트라히드로퍼퓨릴 아민의 경우 적정량 이상을 첨가하는 경우 오히려 부식이 생기기 때문에 40중량% 미만으로 사용되는 것이 바람직하다.The corrosion inhibitor is preferably used in the range of 0.1 to 80% by weight based on the total weight of the composition, when less than 0.1% by weight is not preferred because the corrosion inhibitory effect is insufficient, the mixing ratio of the other composition Considering it is not possible to add more than 80% by weight. More specifically, in the case of tetrahydrofurfuryl alcohol, the corrosion inhibitory effect is better as the amount used increases, but in the case of adding more than an appropriate amount of tetrahydrofurfuryl amine, it is preferable to use less than 40% by weight since corrosion occurs.
본 발명에 따른 감광성 내식각막 잔사제거용 조성물에서, 수소이온 농도가 약염기 영역인 pH 조절제로는 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노에틸에테르, 디에틸렌글리콜 모노부틸에테르 등이 사용될 수 있다. 보다 바람직하게는 디에틸렌글리콜 모노에틸에테르이다. 모든 부식반응에서 수소이온지수는 매우 중요한 요소이며, 플루오린은 산성과 강염기 영역에서 아주 심하게 금속을 부식시키며 특히 산성영역에서는 갈바닉에 의한 부식이 발생되기 때문에, 수소이온 농도가 약염기 영역인 pH 조절제는 잔사제거용 조성물에 바람직하게 사용될 수 있다. 또한 아민류가 아니기 때문에 친환경적이라는 장점을 갖는다.In the composition for removing photoresist etch residue according to the present invention, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, etc. may be used as a pH adjusting agent having a hydrogen ion concentration of weak base region. More preferably, it is diethylene glycol monoethyl ether. The hydrogen ion index is a very important factor in all corrosion reactions. Since fluorine corrodes metals very severely in the acidic and strong base areas, and especially in the acidic area, galvanic corrosion occurs, pH regulators with low hydrogen ion concentrations It can be preferably used in the composition for removing residue. In addition, since it is not an amine, it has the advantage of being environmentally friendly.
pH 조절제는 물과 혼합되어 pH 조절용액을 만들 수 있으며, 물의 혼합에 따라 pH의 변화가 거의 없는 것이 바람직하며, 물과 혼합된 pH 조절용액은 7.5 내지 9.0의 pH를 갖는 것이 바람직하다.The pH adjusting agent may be mixed with water to make a pH adjusting solution, and it is preferable that there is little change in pH depending on the mixing of water, and the pH adjusting solution mixed with water preferably has a pH of 7.5 to 9.0.
상기 pH 조절제는 전체 조성물 중량을 기초로 하여 10 내지 80중량%의 범위 내에서 사용되는 것이 바람직하며, 10중량% 미만으로 사용되는 경우, 조절용량이 적어 조성물의 성능이 오래 유지될 수 없는 문제가 있으며, 80중량%를 초과하여 사용되는 경우 금속부식이 발생되는 문제가 있어 바람직하지 않다.The pH adjuster is preferably used in the range of 10 to 80% by weight based on the total weight of the composition, when used in less than 10% by weight, there is a problem that the performance of the composition can not be maintained for a long time due to the small amount And, when used in excess of 80% by weight is not preferred because there is a problem that the metal corrosion occurs.
본 발명에 따른 감광성 내식각막 잔사제거용 조성물의 또 다른 성분인 암모늄 플로라이드는 반응 촉진제로서 첨가되며, 감광성 유기물뿐만 아니라 플라즈마 식각 후 발생되는 유기금속성 잔사들도 용이하고 빠르게 제거할 수 있다.Ammonium fluoride, which is another component of the composition for removing photoresist etch residue according to the present invention, is added as a reaction accelerator and can easily and quickly remove organometallic residues generated after plasma etching as well as photosensitive organic substances.
상기 암모늄 플로라이드는 전체 조성물 중량을 기초로 하여 0.1 내지 2.0 중량%의 범위 내에서 사용되는 것이 바람직하며, 0.1 중량% 미만 사용되는 경우 잔사 제거 능력이 현저히 떨어지고, 2.0 중량부를 초과하는 경우 산화막 또는 금속의 부 식이 진행될 수 있다.The ammonium fluoride is preferably used in the range of 0.1 to 2.0% by weight based on the total weight of the composition, when less than 0.1% by weight of the residue removal ability is significantly reduced, when exceeding 2.0 parts by weight of the oxide film or metal Corrosion may proceed.
이하, 실시예를 들어 본 발명을 설명하지만, 하기 실시예로 본 발명이 한정되지는 않는다.Hereinafter, although an Example is given and this invention is demonstrated, this invention is not limited to the following example.
실시예Example 1 내지 4 1 to 4
하기 표 1에 나타난 바와 같은 조성으로 감광성 내식각막의 잔사제거용 조성물을 각각 제조하였다.To prepare a composition for removing the residue of the photoresist with a composition as shown in Table 1 below.
비교예Comparative example 1 One
하기 표 1에 나타난 바와 같이, 부식 억제제를 사용하지 않은 감광성 내식각막의 잔사제거용 조성물을 제조하였다.As shown in Table 1 below, a composition for removing residues of the photoresist having no corrosion inhibitor was prepared.
EDG : 디에틸렌글리콜 모노에틸에테르EDG: diethylene glycol monoethyl ether
THFA : 테트라히드로퍼퓨릴 알코올THFA: Tetrahydrofurfuryl Alcohol
THFN : 테트라히드로퍼퓨릴 아민THFN: Tetrahydrofurfuryl Amine
AF : 암모니움 플루오라이드AF: Ammonium Fluoride
시험예Test Example 1 One
본 발명의 감광성 내식각막의 잔사제거용 조성물에서 pH 조절제로 사용되는 EDG를 물과 혼합했을 경우의 pH를 변화를 시험하여, 그 결과를 하기 표 2에 나타내었다.In the composition for removing residues of the photoresist of the present invention, the pH of the EDG used as a pH adjusting agent was mixed with water, and the results were shown in Table 2 below.
상기 표 2에 나타난 바와 같이, EDG는 수소이온 농도가 약염기 영역이며, 물의 첨가에 따른 pH의 변화가 크지 않음을 볼 수 있었으며, 이는 EDG가 아민계가 아니면서도 약염기 영역의 적합한 pH 조절제임을 확인할 수 있었다.As shown in Table 2, EDG has a hydrogen ion concentration in the weak base region, it can be seen that the pH change is not large according to the addition of water, which was confirmed that the EDG is a suitable pH regulator in the weak base region, not amine-based .
시험예Test Example 2 2
비교예 1의 조성물을 비이커에 담고, 금속배선 웨이퍼 조각을 넣어 10분 동안 실온에서 처리하여, 처리 전 및 후를 도 1의 SEM 사진으로 나타내었다.The composition of Comparative Example 1 was placed in a beaker, a metal wafer wafer piece was placed and treated at room temperature for 10 minutes, and before and after the treatment was shown in the SEM photograph of FIG. 1.
도 1을 통해 확인될 수 있는 바와 같이, 상당히 많은 부식이 알루미늄 배선에서 일어남을 확인할 수 있었다.As can be seen from FIG. 1, it was found that much corrosion occurred in the aluminum wiring.
실시예 1의 조성물을 비이커에 담고, 금속배선 웨이퍼 조각을 넣어 10분 동안 실온에서 처리하여, 처리 전 및 후를 도 2의 SEM 사진으로 나타내었다.The composition of Example 1 was placed in a beaker, a metal wafer wafer piece was placed and treated at room temperature for 10 minutes, and before and after the treatment was shown in the SEM photograph of FIG. 2.
또한, 실시예 2의 조성물을 비이커에 담고, 패드 웨이퍼 조각을 넣어 10분 동안 처리하여, 처리 전 및 후를 도 3의 SEM 사진으로 나타내었다.In addition, the composition of Example 2 was placed in a beaker, the pad wafer piece was put and treated for 10 minutes, and before and after the treatment was shown in the SEM photograph of FIG.
또한, 실시예 3의 조성물을 비이커에 담고, 금속배선 웨이퍼 조각을 넣어 10분동안 실온에서 처리하여, 처리 전 및 후를 도 4의 SEM 사진으로 나타내었다. In addition, the composition of Example 3 was placed in a beaker, a metal wafer wafer piece was put and treated at room temperature for 10 minutes, and before and after the treatment was shown in the SEM photograph of FIG. 4.
도 2 및 도 3을 통해 확인될 수 있는 바와 같이, 실시예 1 내지 2 모두 다 약간의 부식이 알루미늄 배선에 발생하였음을 확인할 수 있었지만, 이는 물의 함량을 줄이는 경우 많이 개선되었다. 또한, 도 4를 통해 알 수 있는 바와 같이, 실시예3의 조성물로는 금속 배선에서 부식이 일어나지 않음을 확인할 수 있었다.As can be seen through Figures 2 and 3, it was confirmed that both of the Examples 1 to 2 some corrosion occurred in the aluminum wiring, but this is much improved when reducing the content of water. In addition, as can be seen through Figure 4, the composition of Example 3 was confirmed that the corrosion does not occur in the metal wiring.
또한, 실시예 3 및 실시예 4의 조성물을 비교하기 위해, 이들 각각의 조성물을 비이커에 각각 담고, 패드 웨이퍼 조각을 넣어 10분 동안 실온에서 처리한 후, 이를 도 5의 SEM 사진으로 나타내었다. 도 5를 통해 알 수 있는 바와 같이, 부식 억제제로서 THFA가 많이 들어간 실시예 4가 실시예3에 비해 부식방지 효과가 크다는 것을 확인하였다.In addition, in order to compare the compositions of Example 3 and Example 4, each of these compositions were each contained in a beaker, pad wafer pieces were placed and treated at room temperature for 10 minutes, and this is shown in the SEM photograph of FIG. As can be seen from Figure 5, it was confirmed that Example 4 containing a lot of THFA as a corrosion inhibitor has a larger corrosion protection effect than Example 3.
시험예Test Example 3 3
본 발명에 따른 조성물의 불순물 이외의 하부막에 대한 부식도를 측정하기 위하여 여러 종류의 기판을 10분 동안 실온하에서 상기 실시예 3의 조성물로 처리한 후 물로 세정하고 질소 가스로 건조한 후 그 전후의 막두께의 변화를 측정하여, 그 결과를 하기 표 3에 나타내었다.In order to measure the degree of corrosion of the lower film other than the impurities of the composition according to the present invention, various kinds of substrates were treated with the composition of Example 3 at room temperature for 10 minutes, washed with water, dried with nitrogen gas, and before and after the film. The change in thickness was measured, and the results are shown in Table 3 below.
상기 표 3을 통해, 본 발명에 따른 감광성 내식각막의 잔사 제거용 조성물이 불순물 이외의 하부막에 대한 부식작용은 거의 없음을 확인할 수 있었다.Through Table 3, it was confirmed that the composition for removing residues of the photoresist according to the present invention has little corrosion effect on the lower layer other than impurities.
본 발명에 따른 잔사 제거용 조성물은 반도체 제조 공정에 있어서, 건식식각 및 에싱 공정 후 발생되는 불용성 잔사에 대한 제거능력이 뛰어나고, 물에 의한 세정 공정 중에서 수산화이온이 발생되지 않아 후속 유기용매에 의한 세정공정이 불필요하게 된다. The composition for removing residues according to the present invention is excellent in the ability to remove insoluble residues generated after dry etching and ashing processes in a semiconductor manufacturing process, and does not generate hydroxide ions in a washing process with water, thereby cleaning with a subsequent organic solvent. The process becomes unnecessary.
또한, 본 발명에 따른 잔사 제거용 조성물은 기존에 사용되던 페놀류 부식방지제가 아닌 테트라하이드로퍼퓨릴 알코올류를 사용하고, 또한, 독성인 아민 계통의 pH 조절제 대신 비아민계의 pH 조절제를 사용함에 따라 친환경적이다.In addition, the residue removal composition according to the present invention uses tetrahydrofurfuryl alcohols, not phenolic corrosion inhibitors, which are used in the past, and is environmentally friendly by using non-amine pH regulators instead of toxic amine pH regulators. to be.
Claims (6)
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| KR1020050129712A KR100752446B1 (en) | 2005-12-26 | 2005-12-26 | Composition for Removing Polymer Residue of Photosensitive Resistive Etching Film |
| PCT/KR2006/005563 WO2007074990A1 (en) | 2005-12-26 | 2006-12-19 | Composition for removing polymer residue of photosensitive etching-resistant layer |
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| KR20100082109A (en) * | 2009-01-08 | 2010-07-16 | 최호성 | Composition for removing polymer residue of photosensitive resistive etching film |
| KR20140008995A (en) * | 2010-11-19 | 2014-01-22 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | Liquid composition for cleaning semiconductor substrate and method for cleaning semiconductor substrate using same |
| KR101485217B1 (en) * | 2011-12-02 | 2015-01-22 | 최호성 | Composition for Removing Polymer Residue of Photosensitive Resistive Etching Film |
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| KR20050002573A (en) * | 2003-06-26 | 2005-01-07 | 동우 화인켐 주식회사 | Photoresist stripper composition, and exfoliation method of a photoresist using it |
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| JP3787085B2 (en) * | 2001-12-04 | 2006-06-21 | 関東化学株式会社 | Composition for removing photoresist residue |
| US6951710B2 (en) * | 2003-05-23 | 2005-10-04 | Air Products And Chemicals, Inc. | Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof |
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| KR20050002573A (en) * | 2003-06-26 | 2005-01-07 | 동우 화인켐 주식회사 | Photoresist stripper composition, and exfoliation method of a photoresist using it |
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