KR101485217B1 - Composition for Removing Polymer Residue of Photosensitive Resistive Etching Film - Google Patents
Composition for Removing Polymer Residue of Photosensitive Resistive Etching Film Download PDFInfo
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- KR101485217B1 KR101485217B1 KR20110128165A KR20110128165A KR101485217B1 KR 101485217 B1 KR101485217 B1 KR 101485217B1 KR 20110128165 A KR20110128165 A KR 20110128165A KR 20110128165 A KR20110128165 A KR 20110128165A KR 101485217 B1 KR101485217 B1 KR 101485217B1
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- 239000000203 mixture Substances 0.000 title claims abstract description 52
- 238000005530 etching Methods 0.000 title abstract description 3
- 229920000642 polymer Polymers 0.000 title description 7
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims abstract description 54
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 14
- 210000004087 cornea Anatomy 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000003623 enhancer Substances 0.000 claims abstract description 8
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 4
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 4
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 4
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- PRBXPAHXMGDVNQ-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]acetic acid Chemical compound OCCOCCOCC(O)=O PRBXPAHXMGDVNQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- 229940102253 isopropanolamine Drugs 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 claims description 2
- YNOGYQAEJGADFJ-UHFFFAOYSA-N oxolan-2-ylmethanamine Chemical compound NCC1CCCO1 YNOGYQAEJGADFJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 22
- 238000005260 corrosion Methods 0.000 abstract description 22
- 239000002184 metal Substances 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 description 14
- 150000002430 hydrocarbons Chemical class 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000004215 Carbon black (E152) Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 150000003973 alkyl amines Chemical class 0.000 description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 7
- 125000000753 cycloalkyl group Chemical group 0.000 description 7
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 3
- 229910018182 Al—Cu Inorganic materials 0.000 description 3
- -1 alcohol amines Chemical class 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000002334 glycols Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 150000003138 primary alcohols Chemical class 0.000 description 2
- RVSIYTLODOLVKA-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO.NCCOCCO RVSIYTLODOLVKA-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 231100000925 very toxic Toxicity 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/06—Silver salts
- G03F7/063—Additives or means to improve the lithographic properties; Processing solutions characterised by such additives; Treatment after development or transfer, e.g. finishing, washing; Correction or deletion fluids
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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Abstract
본 발명은 감광성 내식각막의 잔사제거용 조성물에 관한 것이다. 본 발명에 따른 조성물은 글리콜산과 물을 기반으로, 선택적으로 pH 조절제 또는 세정 강화제를 부가시킨 것이다. 본 발명에 따른 조성물은 반도체 공정에서 포토레지스트 패턴 밑에 있는 하부 금속 또는 실리콘 산화막을 플라즈마로 식각 및 에싱한 후에 발생되는 잔사들을 제거하는 능력이 뛰어나고, 부식을 유발시키지 않으며, 또한 친환경적이다.The present invention relates to a composition for removing a photoresist cornea. The composition according to the present invention is based on glycolic acid and water, optionally with a pH adjusting agent or a washing enhancer added thereto. The composition according to the present invention is excellent in the ability to remove residues generated after plasma etching and etching a lower metal or silicon oxide film under a photoresist pattern in a semiconductor process, does not cause corrosion, and is environmentally friendly.
Description
본 발명은 반도체 공정에서 포토레지스트 패턴 밑에 있는 하부 금속 또는 실리콘 산화막을 플라즈마로 식각 및 에싱한 후에 발생되는 잔사들을 제거하는 감광성 내식각막의 잔사제거용 조성물에 관한 것이다. 보다 상세하게는 글리콜산(glycolic acid)을 기초로 한 제거 능력이 뛰어나고 부식을 유발시키지 않으면서 또한 친환경적인 잔사제거용 조성물에 관한 것이다. The present invention relates to a composition for removing a residue of a photosensitive corrosion resistant cornea, which removes residues generated after a lower metal or a silicon oxide film underlying a photoresist pattern in a semiconductor process is etched and ashed with a plasma. More particularly, the present invention relates to a composition for removing residues that is excellent in removal ability based on glycolic acid and does not cause corrosion and is environmentally friendly.
반도체 제조 공정은 금속배선 또는 콘택트 포인트(contact point)의 형성을 위한 광, 건식 식각 또는 습식 식각, 그리고 플라즈마 애싱(ashing) 등의 일련의 공정에서 유기성 또는 금속성 잔사들(residue)을 발생시킨다. 따라서, 후공정을 진행시키기 위해서는 이러한 불필요한 잔사들을 미리 제거해야만 한다. Semiconductor manufacturing processes generate organic or metallic residues in a series of processes such as light, dry etching or wet etching, and plasma ashing for the formation of metal lines or contact points. Therefore, it is necessary to remove such unnecessary residues in advance in order to proceed the post-process.
이런 잔사들을 제거하기 위하여 종래에는 히드록실아민, 알코올 아민류, 물 및 부식 억제제로 이루어지는 조성물을 이용하여 60 내지 85℃의 고온하에서 잔사를 제거하여 왔다. 그러나 이러한 아민류를 포함한 조성물은 물에 의한 세정 공정에서 수산화이온을 발생시키기 때문에 부식방지를 위하여 이소프로필알코올(IPA)을 중간세정제(intermediate rinse)로 이용하고 있다. In order to remove such residues, conventionally, a composition comprising hydroxylamine, alcohol amines, water and a corrosion inhibitor has been used to remove the residue at a high temperature of 60 to 85 캜. However, such compositions containing amines use isopropyl alcohol (IPA) as an intermediate rinse in order to prevent corrosion because they generate hydroxide ions in a water cleaning process.
현재 대표적인 제품으로는 ACT사(社)의 ACT-935와 듀퐁사의 EKC-265등이 있다. 그렇지만 일반적으로 이들 조성물들은 갈바닉(galvanic)에 의한 부식과 독성에 의하여 그 적용성에 한계를 갖고 있다. Currently, ACT-935 from ACT and EKC-265 from DuPont are representative products. However, these compositions are generally limited in its applicability due to corrosion and toxicity by galvanic.
최근에는 세정장비의 발전과 반도체 선폭의 미세화에 대응하여 플루오린(fluorine)을 사용하는 새로운 조성들이 출시되고 있으며, 이는 기존의 반도체 제조공정 중에 이용되고 있는 DHF(dilute hydrofluoric acid) 또는 BOE(HF와 암모니움 플루오라이드 혼합액) 세정을 근간으로 하여 극성용매 및 부식 억제제를 첨가하여 상온(20 내지 30℃)에서 진행하며, 중간세정제가 필요 없다는 장점을 갖는 반면에 패턴의 산화물 공격(oxide attack)에 대한 관리가 요구된다는 문제점을 갖는다.In recent years, new compositions using fluorine have been released in response to the development of cleaning equipment and miniaturization of the semiconductor line width. This is due to the fact that dilute hydrofluoric acid (DHF) or BOE Ammonium fluoride mixed solution), a polar solvent and a corrosion inhibitor are added, and the process is carried out at room temperature (20 to 30 ° C), and an intermediate cleaning agent is not necessary. On the other hand, Management is required.
이와 같이 종래에 사용되는 잔사제거용 조성물에는 하부층의 부식 또는 갈바닉 반응에 의한 금속배선의 손상 등이 빈번히 발생하여 전기저항치에 막대한 영향을 끼치고 있으며, 또한 웨이퍼 표면에 잔사제거 조성물로부터 재 부착되는 파티클에 의한 영향으로 반도체 소자의 수율을 저하시키는 등의 문제점이 상존하고 있다. As described above, the composition for removing residues used in the prior art frequently causes damage to the metal wiring due to corrosion or galvanic reaction in the lower layer, which greatly affects the electric resistance value. In addition, the particles that are reattached to the surface of the wafer from the residue- There is a problem that the yield of semiconductor devices is lowered due to the influence of heat.
또한 현재 사용되고 있는 산화제인 히드록실아민(Hydroxylamine)은 아주 독성이 강하고, 합성시의 폭발위험으로 제품공급중단의 위험이 항시 내재되어 있다는 문제점이 있다.Hydroxylamine, which is a currently used oxidizing agent, is very toxic, and there is a risk that the risk of product supply interruption is always present due to the explosion risk during synthesis.
본 발명의 기술적 과제는 점점 반도체의 패턴이 미세화되고 알루미늄 배선의 두께가 두꺼워지면서 플라즈마 식각 시간이 길어져 알루미늄 패턴에 축적되는 전하량이 상당히 높아지게 됨에 따라 기존에 사용되고 있는 히드록실아민계의 폴리머 제거제가 알루미늄/구리합금에서 갈바닉 부식을 일으켜 알루미늄 배선의 전기저항치를 크게 변화시킨다는 문제점을 해결함과 동시에 세계적으로 요구되고 있는 환경친화성에 부합할 수 있는 감광성 내식각막의 잔사제거용 조성물을 제공하는 것이다. SUMMARY OF THE INVENTION Accordingly, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a metal- The present invention provides a composition for removing photoresist corrosion-resistant cornea, which can solve the problem that galvanic corrosion occurs in a copper alloy to greatly change the electrical resistance value of an aluminum wiring, and can meet environmental requirements of the world.
따라서, 상기 과제를 해결하기 위해, 본 발명은 글리콜산 1 내지 70 중량%; 및 나머지 물을 포함하는 감광성 내식각막의 잔사제거용 조성물을 제공한다.Accordingly, in order to solve the above-mentioned problems, the present invention relates to a composition comprising 1 to 70% by weight of glycolic acid; And a residual water. The present invention also provides a composition for removing the photoresist cornea.
본 발명에 따른 조성물에서, 상기 조성물의 pH 범위를 4 내지 10의 범위로 조절하는 pH 조절제를 더 포함하는 것이 바람직하며, pH 조절제는 글리콜산과 물의 혼합물 100중량부에 대해 5 내지 50중량부의 범위 내에서 포함될 수 있다.In the composition according to the present invention, it is preferable to further include a pH adjusting agent for adjusting the pH range of the composition to a range of 4 to 10. The pH adjusting agent may be added in a range of 5 to 50 parts by weight per 100 parts by weight of the mixture of glycolic acid and water Lt; / RTI >
pH 조절제로는 일차 알킬아민, 이차 알킬아민 및 삼차 알킬아민으로 이루어진 군에서 선택된 아민 또는 알칸올 아민이 단독으로 또는 두 가지 이상 조합해서 사용될 수 있으며, 여기서, 알킬 및 알칸올은 탄소수 2 내지 10개인 선형 탄화수소, 분지형 탄화수소 또는 고리형 탄화수소이다.The pH adjusting agent may be an amine or an alkanolamine selected from the group consisting of primary alkyl amines, secondary alkyl amines and tertiary alkyl amines, or a combination of two or more thereof, wherein the alkyl and alkanol have 2 to 10 carbon atoms Linear hydrocarbons, branched hydrocarbons or cyclic hydrocarbons.
본 발명에 따른 조성물은 세정력을 개선시키기 위하여 세정력 강화제로서 일차 알코올, 이차 알코올, 삼차 알코올 및 하기 식으로 표현되는 글리콜로 이루어진 군에서 일종 이상 선택된 것을 더 포함하는 것이 바람직하다:The composition according to the present invention preferably further comprises one or more selected from the group consisting of a primary alcohol, a secondary alcohol, a tertiary alcohol and a glycol represented by the following formula as a detergency enhancing agent for improving the detergency:
화학식 1
R-O(CH2CH2O)HRO (CH 2 CH 2 O) H
여기서, 알코올은 탄소수 2 내지 10개의 선형 탄화수소 알코올, 분지형 탄화수소 알코올 또는 고리형 탄화수소 알코올이고, 상기 식에서 R은 탄소수 2 내지 10개의 선형 탄화수소, 분지형 탄화수소 또는 고리형 탄화수소이다.Here, the alcohol is a linear hydrocarbon alcohol having 2 to 10 carbon atoms, a branched hydrocarbon alcohol, or a cyclic hydrocarbon alcohol, wherein R is a linear hydrocarbon, a branched hydrocarbon, or a cyclic hydrocarbon having 2 to 10 carbon atoms.
상기 세정력 강화제는 글리콜산과 물의 혼합물 100중량부에 대해 10 내지 70중량부의 범위 내에서 포함될 수 있다.The detergency enhancer may be included in the range of 10 to 70 parts by weight based on 100 parts by weight of the mixture of glycolic acid and water.
본 발명에 따른 바람직한 pH 조절제로는 모노에탄올아민, 이소프로판올아민 또는 2-(2아미노에톡시)에탄올이고, 바람직한 세정력 강화제는 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노부틸에테르, 트리에틸렌글리콜에테르 또는 테트라히드로퍼퓨릴알코올이다.Preferred pH modifiers according to the present invention are monoethanolamine, isopropanolamine or 2- (2-aminoethoxy) ethanol. Preferred detergency builders are diethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl Ether, triethylene glycol ether or tetrahydrofurfuryl alcohol.
본 발명에 따른 감광성 내식각막의 잔사제거용 조성물은, 반도체 제조 공정에 있어서 식각 및 에싱 공정 후 발생되는 불용성 잔사에 대한 제거능력이 뛰어나며, 종래 사용되던 히드록실아민류와는 달리 갈바닉 부식에 강하여, 알루미늄, 구리배선, 텅스텐 플러그의 세정에 동시에 적용 할 수 있다. The composition for removing the photoresist cornea according to the present invention is excellent in the ability to remove insoluble residues generated after the etching and ashing processes in the semiconductor manufacturing process and is resistant to galvanic corrosion unlike the conventional hydroxyl amines, , Copper wiring, and tungsten plug.
또한, 본 발명에 따른 감광성 내식각막의 잔사제거용 조성물은 독성이 없는 성분들로 이루어져 기존의 폴리머 제거제 보다 친환경적이어서, 반도체 제조작업환경의 개선에 기여 할 수 있다.In addition, the composition for removing the photoresist cornea according to the present invention is more environmentally friendly than the conventional polymer remover, because it is composed of components that are not toxic.
도 1은 본 발명의 실시예 1의 조성물로 웨이퍼를 처리한 후 표면을 촬영한 SEM 사진이다.
도 2는 본 발명의 실시예 14의 조성물과 히드록실아민 조성물로 각각 웨이퍼를 처리한 후 이를 비교한 SEM 사진이다.
도 3은 본 발명의 실시예 5의 조성물로 웨이퍼를 처리한 후 표면을 촬영한 SEM 사진이다.FIG. 1 is a SEM photograph of a surface of a wafer treated with the composition of Example 1 of the present invention. FIG.
FIG. 2 is a SEM photograph of a wafer prepared by treating the wafer with the composition of Example 14 of the present invention and the hydroxylamine composition, respectively.
FIG. 3 is a SEM photograph of a surface of a wafer treated with the composition of Example 5 of the present invention. FIG.
이하, 본 발명을 더욱 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명의 하나의 양태는 글리콜산 1 내지 70 중량%; 및 나머지 물을 포함하는 감광성 내식각막의 잔사제거용 조성물을 제공한다.One embodiment of the present invention is a composition comprising 1 to 70% by weight of glycolic acid; And a residual water. The present invention also provides a composition for removing the photoresist cornea.
본 발명은 지금까지 사용되고 있는 폴리머 제거제의 중요한 산화제인 히드록실아민 대신에 탁월한 잔사제거력을 가지면서 친환경적인 글리콜산(Glycolic acid)을 도입하였으며, 글리콜산은 일반적으로 화장품 중에서 피부각질제거제의 주요성분으로 사용되고 있다. 이는 또한 상대적으로 금속에 대한 부식이 없고 선택적으로 유기물만 제거할 수 있기 때문에, 금속 배선의 부식 없이 선택적으로 불용성인 금속성 잔류물을 효과적으로 분해 시켜준다. 따라서 후속하는 탈이온수 세정공정 중에 발생하는 갈바닉 부식을 완화 시켜준다.The present invention introduces eco-friendly glycolic acid, which has excellent residual removal power, instead of hydroxylamine, which is an important oxidizing agent for polymer removers used so far, and glycolic acid is generally used as a main component of skin exfoliants in cosmetics have. It also effectively decomposes selectively insoluble metallic residues without corrosion of the metal wiring, since it is relatively corrosion-free and selectively removes only organics. Thus relieving galvanic corrosion occurring during subsequent deionized water cleaning processes.
글리콜산은 중량비로 1 내지 70% 범위 내에서 사용될 수 있으며, 1중량% 미만으로 사용되는 경우 산화제로서의 역할이 원활하지 않으며, 또한 70중량%을 초과하여 사용하는 경우에는 조성물의 pH를 4 내지 10로 조절하는데 있어서 글리콜산의 산성으로 인해 너무 많은 pH 조절제가 사용되어야 하며, 이는 다른 조성물의 조성비에 영향을 주므로 바람직하지 않다. 글리콜산의 보다 바람직한 범위는 40 내지 70중량%이다.The glycolic acid may be used in an amount of 1 to 70% by weight, and when it is used in an amount of less than 1% by weight, its role as an oxidizing agent is not smooth. When the amount of the glycolic acid is more than 70% by weight, Due to the acidity of the glycolic acid in controlling, too much pH control agent should be used, which is undesirable because it affects the composition ratio of the other compositions. A more preferable range of the glycolic acid is 40 to 70% by weight.
물의 양은 글리콜산의 산화력에 큰 영향을 주며 물이 많이 포함되어 있을수록 폴리머 제거력은 강해지나 마찬가지로 금속배선의 부식 또한 많아진다. 반대로 물의 양이 적으면 폴리머 제거력은 떨어지나 금속배선의 부식은 작아진다. 따라서 적당한 양의 물이 필요하며, 바람직하게는 30 내지 99중량%의 범위 내에서 사용되는 것이고, 보다 바람직하게는 30 내지 60중량%의 범위 내에서 사용되는 것이다.The amount of water has a great influence on the oxidizing power of glycolic acid. The more water contains, the stronger the polymer removing power, but also the corrosion of metal wiring. Conversely, when the amount of water is small, the polymer removing ability is lowered, but the corrosion of the metal wiring is reduced. Therefore, a suitable amount of water is required, preferably within a range of 30 to 99 wt%, and more preferably within a range of 30 to 60 wt%.
본 발명의 다른 양태는 글리콜산과 물의 혼합물 100중량부에 조성물의 pH 범위를 4 내지 10의 범위로 조절하는 pH 조절제 5 내지 50중량부를 포함하는 감광성 내식각막의 잔사제거용 조성물을 제공한다.Another aspect of the present invention provides a composition for removing a photosensitive corrosion corneal debris, comprising 100 parts by weight of a mixture of glycolic acid and water, and 5 to 50 parts by weight of a pH adjusting agent for adjusting the pH range of the composition to 4 to 10.
상기 pH 조절제는 글리콜산에 혼합되어 조성물의 pH를 4 내지 10으로 조정해 준다. pH를 조절하는 이유는 강산성일 경우, 전하가 많이 축적되어 있는 금속 웨이퍼를 처리 할 때 아킹(Aching)이 발생 될 가능성이 높기 때문이며, 반대로 강염기성일 경우에는 금속배선의 부식 및 갈바닉 부식의 발생 위험이 크기 때문이다.The pH adjusting agent is mixed with glycolic acid to adjust the pH of the composition to 4 to 10. The reason for controlling the pH is that, in the case of strong acidity, there is a high possibility of arching when processing a metal wafer having a large amount of electric charges, and in the case of strong bases, there is a risk of corrosion of metal wiring and galvanic corrosion It is because of size.
이때 pH를 조절하기 위해 사용할 수 있는 물질로는 아민류(Amine) 또는 알칸올아민류(Alkanolamine)이며, 이들은 단독으로 또는 두 가지 이상을 조합해서 사용될 수 있다. 아민은 모든 상업화 되어 있는 일차 알킬아민, 이차 알킬아민, 삼차 알킬아민들을 사용 할 수 있으며, 또한 모든 상업화 되어 있는 알칸올아민류도 사용 할 수 있다. At this time, substances which can be used for controlling the pH include amines or alkanolamines, which may be used alone or in combination of two or more. Amines can be any commercial primary alkylamine, secondary alkylamine, tertiary alkylamine, and also any commercialized alkanolamine.
이는 아민 또는 알칸올아민 모두가 단순히 글리콜산과의 혼합으로 pH를 조절해 주는 역할을 하고, 부가적으로는 유기물을 용해시켜 주는 역할을 하기 때문이다.This is because all of the amine or alkanolamine serves to adjust pH by simply mixing with glycolic acid and additionally dissolves organic matter.
알킬아민에서 알킬은 탄소수 2 내지 10개의 선형 탄화수소, 분지형 탄화수소 또는 고리형 탄화수소를 가리키며, 알칸올아민에서 알칸올(alkanol)은 탄소수 2 내지 10개의 선형 탄화수소 알코올, 분지형 탄화수소 알코올 또는 고리형 탄화수소 알코올을 일컫는다.Alkylamines in the alkylamines refer to linear hydrocarbons, branched hydrocarbons or cyclic hydrocarbons having from 2 to 10 carbon atoms, and alkanol in the alkanolamine is a linear hydrocarbon alcohol having from 2 to 10 carbon atoms, branched hydrocarbon alcohols or cyclic hydrocarbons Alcohol.
상기 pH 조절제는 글리콜산의 양과 맞추고자 하는 pH에 따라 다르지만, 대략적으로 5 내지 50중량부의 범위 내에서 포함되는 것이 적당하다. The amount of the pH adjusting agent varies depending on the pH to be adjusted with the amount of the glycolic acid, but is suitably in the range of about 5 to 50 parts by weight.
여기에서 pH 조절제의 양이 너무 많거나 적을 경우에는 pH가 너무 높거나 낮아져 금속배선의 부식이 발생 할 수 있다.Here, if the amount of the pH adjusting agent is too high or too low, the pH may become too high or low, and corrosion of the metal wiring may occur.
본 발명에서는 세정력을 향상시켜 파티클(Particle)의 발생을 최소화 하기 위하여 세정력 강화제를 추가적으로 사용할 수 있다. 여기에서, 세정력 강화제로는 알코올 또는 글리콜류가 단독으로 또는 두가지 이상 조합해서 사용될 수 있으며, 사용할 수 있는 알코올 및 글리콜류로는 모든 상업화된 것을 사용할 수 있지만, 보통은 끊는 점이 150℃ 이상인 것이 바스 수명(bath life)을 유지하는데 유리하다.In the present invention, a detergency enhancer may be additionally used to improve the detergency and to minimize the generation of particles. As the detergency enhancer, alcohols or glycols may be used alone or in combination of two or more. Alcohols and glycols that can be used may be any commercially available ones. Usually, it is advantageous to maintain the bath life.
따라서, 본 발명의 또 다른 양태는 글리콜산과 물의 혼합물 100중량부에 대해 조성물의 pH 범위를 4 내지 10의 범위로 조절하는 pH 조절제 5 내지 50중량부 및 일차 알코올, 이차 알코올, 삼차 알코올 및 하기 식으로 표현되는 글리콜로 이루어진 군에서 일종 이상 선택된 세정력 강화제 10 내지 70중량부를 포함하는 감광성 내식각막의 잔사제거용 조성물을 제공한다:Accordingly, another embodiment of the present invention is a process for preparing a composition comprising 5 to 50 parts by weight of a pH adjusting agent which adjusts the pH range of the composition to a range of 4 to 10 with respect to 100 parts by weight of a mixture of glycolic acid and water and 5 to 50 parts by weight of a primary alcohol, And 10 to 70 parts by weight of a detergency enhancer selected from at least one kind selected from the group consisting of glycols represented by the following formulas:
화학식 1
R-O(CH2CH2O)HR-O (CH2CH2O) H
여기서, 알코올은 탄소수 2 내지 10개의 선형 탄화수소 알코올, 분지형 탄화수소 알코올 또는 고리형 탄화수소 알코올이고, 상기 식에서 R은 탄소수 2 내지 10개의 선형 탄화수소, 분지형 탄화수소 또는 고리형 탄화수소이다.Here, the alcohol is a linear hydrocarbon alcohol having 2 to 10 carbon atoms, a branched hydrocarbon alcohol, or a cyclic hydrocarbon alcohol, wherein R is a linear hydrocarbon, a branched hydrocarbon, or a cyclic hydrocarbon having 2 to 10 carbon atoms.
상기 세정력 강화제의 첨가량은 10 내지 70중량부가 적당하다. 이때 너무 적을 경우에는 세정력 향상이 현저히 감소하고, 또한 많을 경우에는 다른 성분들과의 혼합비를 고려해야만 한다.
The addition amount of the detergency enhancer is suitably 10 to 70 parts by weight. If the amount is too small, the improvement in detergency is remarkably reduced. If the amount is too large, the mixing ratio with other components must be considered.
이하, 본 발명을 실시예를 들어 더욱 상세히 설명한다.
Hereinafter, the present invention will be described in more detail with reference to examples.
실시예Example 1 내지 4 1 to 4
하기의 표 1에 나타낸 조성으로 글리콜산과 물로만 된 감광성 내식각막의 잔사제거용 조성물을 제조하고, 그 유효성을 검증하였다.
A composition for removal of photosensitive corrosion-resistant cornea consisting of only glycolic acid and water with the composition shown in the following Table 1 was prepared and its effectiveness was verified.
실시예Example 5 5
하기의 표 1에 나타낸 조성으로 글리콜산, pH 조절제인 테트리히드로퍼퓨릴아민 및 물로만 된 감광성 내식각막의 잔사제거용 조성물을 제조하고, 그 유효성을 검증하였다.
A composition for removal of photoresist cornea with glycolic acid, tricresylhydroperfurylamine as a pH regulator, and water was prepared with the composition shown in the following Table 1, and its effectiveness was verified.
실시예Example 6 내지 14 6 to 14
하기의 표 1에 나타낸 조성으로 글리콜산, pH 조절제, 세정력 강화제 및 물로 된 감광성 내식각막의 잔사제거용 조성물을 제조하고, 그 유효성을 검증하였다.A composition for removal of photoresist cornea by glycolic acid, a pH adjuster, a detergency enhancer and water was prepared with the composition shown in the following Table 1 and its effectiveness was verified.
THFA: 테트라히드로퍼퓨릴알코올(Tetrahydrofurfurylalcohol)THFA: Tetrahydrofurfuryl alcohol
THFN: 테트라히드로퍼퓨릴아민(Tetrahydrofurfurylamine)THFN: Tetrahydrofurfurylamine
MEA: 모노에탄올아민(Monoethanolamine)MEA: Monoethanolamine
MIPA: 이소프로판올아민(Isopropanolamine)MIPA: Isopropanolamine
AEE: 2-(2 아미노에톡시)에탄올(2-(2 Aminoethoxy)ethanol)AEE: 2- (2-aminoethoxy) ethanol (2- (2-aminoethoxy) ethanol)
GA: 글리콜산(Glycolic acid)GA: Glycolic acid
EDG: 디에틸렌글리콜모노에틸에테르(Diethyleneglycolmonoethylether)EDG: Diethylene glycol monoethyl ether (Diethyleneglycolmonoethyl ether)
MDG: 디에틸렌글리콜모노메틸에테르(Diethyleneglycolmonomethylether)MDG: diethyleneglycolmonomethylether (diethylene glycol monomethyl ether)
BDG: 디에틸렌글리콜모노부틸에테르(Diethyleneglycolmonobuthylether)BDG: Diethylene glycol monobutyl ether
TEG: 트리에틸렌글리콜에테르(Triethyleneglycolether)
TEG: triethyleneglycol ether
시험예Test Example 1 One
실시예 1의 조성물로 70℃에서 BPSG/TiN/Al-Cu/TiN 웨이퍼를 10분간 처리하고 탈이온수로 15분간 세정한 후, 이를 웨이퍼의 표면 처리 전과 처리 후로 나누어서 SEM으로 촬영하여 그 결과를 도 1에 나타내었다.The BPSG / TiN / Al-Cu / TiN wafers were treated for 10 minutes at 70 ° C with the composition of Example 1, washed with deionized water for 15 minutes, and then separated by SEM before and after the surface treatment of the wafers. Respectively.
도 1에 나타난 바와 같이, 글리콜산과 물의 혼합만으로도 폴리머를 제거 할 수 있으며, 금속배선의 부식이 없음을 알 수 있다.
As shown in Fig. 1, it can be seen that the polymer can be removed only by mixing the glycolic acid with water, and the metal wiring is not corroded.
시험예Test Example 2 2
실시예 14의 조성물과, 비교 조성물(히드록실아민 17.6 중량%, 물 17.6 중량%, 카테콜 5.0 중량%, 에탄올아민 59.8 중량%)로 각각 70℃에서 BPSG/TiN/Al-Cu/TiN 웨이퍼를 10분간 처리하고 탈이온수로 30분 처리한 후에 웨이퍼 표면을 각각 SEM을 촬영하여 그 결과를 비교하여 도 2에 나타내었다. TiN / Al-Cu / TiN wafers at 70 ° C with the composition of Example 14 and comparative compositions (17.6 wt% hydroxylamine, 17.6 wt% water, 5.0 wt% catechol, 59.8 wt% Treated for 10 minutes, treated with deionized water for 30 minutes, and then the wafer surface was photographed by SEM. The results are compared with each other and shown in FIG.
도 2에 나타난 바와 같이, 글리콜산으로 이루어진 본 발명의 조성물은 비교대상인 히드록실아민으로 이루어진 비교 조성물에 비해서 상대적으로 갈바닉 부식이 현저히 줄어드는 것을 알 수 있다.
As shown in FIG. 2, it can be seen that the composition of the present invention made of glycolic acid is significantly reduced in galvanic corrosion compared to the comparative composition comprising the hydroxylamine to be compared.
시험예Test Example 3 3
실시예 5의 조성물로 70℃에서 BPSG/TiN/Al-Cu/TiN 웨이퍼를 10분간 처리하고 탈이온수로 15분간 세정한 후, 이를 웨이퍼의 표면을 처리 전과 처리 후로 나누어서 SEM으로 촬영하여 그 결과를 도 3에 나타내었다.After the BPSG / TiN / Al-Cu / TiN wafers were treated for 10 minutes at 70 ° C with the composition of Example 5 and washed with deionized water for 15 minutes, the surface of the wafers were divided by the SEM before and after treatment, 3.
도 3에 나타난 바와 같이, 글리콜산, 테트리하드로퍼퓨릴아민 및 물의 조성물로 폴리머를 제거 할 수 있으며, 금속배선의 부식이 없음을 확인할 수 있다.
As shown in FIG. 3, the polymer can be removed with a composition of glycolic acid, terephthaloylperfurylamine and water, and it can be confirmed that there is no corrosion of the metal wiring.
이상 설명한 내용을 통해 당업자라면 본 발명의 기술사상을 일탈하지 아니하는 범위에서 다양한 변경 및 수정이 가능함을 알 수 있을 것이다. 따라서, 본 발명의 기술적 범위는 명세서의 상세한 설명에 기재된 내용으로 한정되는 것이 아니라 특허청구의 범위에 의하여 정하여져야만 한다.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be determined by the claims.
Claims (8)
상기 글리콜산과 물의 혼합물 100 중량부에 대하여 5 내지 50 중량부의 pH 조절제 및 10 내지 70 중량부의 세정력 강화제를 추가로 포함하고,
여기서, 상기 pH 조절제는 테트라하이드로퍼퓨릴아민, 2-(2 아미노에톡시)에탄올, 이소프로판올아민 및 모노에탄올아민으로 이루어진 군으로부터 선택되는 하나 이상의 화합물이고,
상기 세정력 강화제는 디에틸렌글리콜모노에틸에테르, 디에틸글리콜모노메틸에테르, 디에틸렌그리콜모노부틸에테르, 트리에틸렌글리콜에테르 및 테트라히드로퍼퓨릴알코올로 이루어진 군으로부터 선택되는 하나 이상의 화합물인 것을 특징으로 하는 감광성 내식각막의 잔사제거용 조성물. And 25% by weight to 70% by weight of glycolic acid and water as the remainder,
Further comprising 5 to 50 parts by weight of a pH adjusting agent and 10 to 70 parts by weight of a detergency enhancing agent per 100 parts by weight of the mixture of glycolic acid and water,
Wherein the pH adjusting agent is at least one compound selected from the group consisting of tetrahydrofurfuryl amine, 2- (2-aminoethoxy) ethanol, isopropanol amine and monoethanol amine,
Wherein the detergency enhancer is at least one compound selected from the group consisting of diethylene glycol monoethyl ether, diethyl glycol monomethyl ether, diethylene glycol monobutyl ether, triethylene glycol ether, and tetrahydrofurfuryl alcohol. A composition for removing residue of photoresist cornea.
상기 감광성 내식각막의 잔사제거용 조성물은 pH 조절제에 의해 조절되어 4 내지 10의 pH를 가지는 감광성 내식각막의 잔사제거용 조성물.
The method according to claim 1,
Wherein the composition for removing the photoresist cornea has a pH of 4 to 10, which is controlled by a pH adjusting agent.
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| KR20080076016A (en) * | 2007-02-14 | 2008-08-20 | 동우 화인켐 주식회사 | Photoresist stripper composition and exfoliation method of a photoresist using it |
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