KR100752221B1 - Heatsink Frame ? Monitoring Method for Wire Bonding Monitoring System - Google Patents

Heatsink Frame ? Monitoring Method for Wire Bonding Monitoring System Download PDF

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KR100752221B1
KR100752221B1 KR1020010040918A KR20010040918A KR100752221B1 KR 100752221 B1 KR100752221 B1 KR 100752221B1 KR 1020010040918 A KR1020010040918 A KR 1020010040918A KR 20010040918 A KR20010040918 A KR 20010040918A KR 100752221 B1 KR100752221 B1 KR 100752221B1
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heat sink
wire bonding
wire
detecting
bonding state
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KR20030005564A (en
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김재윤
정지영
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앰코 테크놀로지 코리아 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

본 발명은 방열판 프레임의 레일부를 활용하여 WBMS 공정을 수행할 수 있도록 부가수단을 형성한 와이어 본딩상태 감지용 방열판 프레임과 이를 이용한 와이어 본딩상태 감지방법을 제공한다.The present invention provides a heat sink frame for detecting a wire bonding state formed with an additional means to perform the WBMS process by utilizing the rail portion of the heat sink frame and a wire bonding state detection method using the same.

이를 위하여 본 발명은 대략 직사각형태의 유닛단위로 구성된 방열판; 상기 방열판에 형성된 그라운드용 금속패드; 상기 방열판의 양측으로 직선상으로 형성되어 있으며, 다수개의 방열판을 고정지지하는 레일부; 상기 레일부에 형성된 검사용 도전패드를 포함하는 것을 특징으로 하는 와이어 본딩상태 감지용 방열판 프레임을 제공한다. To this end, the present invention is a heat sink comprising a unit unit of a substantially rectangular shape; A ground metal pad formed on the heat sink; A rail unit which is formed in a straight line on both sides of the heat sink, and supports a plurality of heat sinks; It provides a heat sink frame for detecting the wire bonding state comprising a conductive pad for inspection formed on the rail portion.

또한, 본 발명은 방열판이 부착된 반도체 패키지의 와이어 본딩 공정중 와이어 본딩상태를 감지하는 방법에 있어서, 상기 와이어 본딩 모니터의 일측 단자는 선단부 와이어 또는 와이어 클램프와 접속시키고, 상기 와이어 본딩 모니터의 타측 단자는 제 1 항의 검사용 도전패드에 접속시킨 후 직류전압을 흘려 전류량을 검출하는 것을 특징으로 하는 와이어 본딩 상태 감지방법을 제공한다.The present invention also provides a method for detecting a wire bonding state during a wire bonding process of a semiconductor package with a heat sink, wherein one terminal of the wire bonding monitor is connected to a tip wire or a wire clamp, and the other terminal of the wire bonding monitor. The present invention provides a wire bonding state sensing method characterized by detecting the amount of current by flowing a DC voltage after connecting to the test conductive pad of claim 1.

와이어 본딩 모니터링 시스템, 방열판, 검사용 도전패드Wire bonding monitoring system, heat sink, conductive pad for inspection

Description

와이어 본딩상태 감지용 방열판 프레임 및 이를 이용한 와이어 본딩상태 감지방법{Heatsink Frame ＆ Monitoring Method for Wire Bonding Monitoring System}Heat sink frame for wire bonding state detection and wire bonding state detection method using same {Heatsink Frame & Monitoring Method for Wire Bonding Monitoring System}

도 1 은 종래 일반적인 BGA 반도체 패키지의 단면도.1 is a cross-sectional view of a conventional general BGA semiconductor package.

도 2 는 종래 방열판이 부착된 BGA 반도체 패키지의 단면도.Figure 2 is a cross-sectional view of a conventional BGA semiconductor package with a heat sink.

도 3 은 와이어 본딩 공정시 와이어 본딩 모니터 시스템의 개략적인 구성도.3 is a schematic diagram of a wire bonding monitor system in a wire bonding process;

도 4 는 본 발명에 의한 와이어 본딩상태 감지용 방열판 프레임의 바람직한 일실시예를 도시한 평면도.Figure 4 is a plan view showing a preferred embodiment of the heat sink frame for detecting the wire bonding state according to the present invention.

도 5 는 본 발명에 의한 와이어 본딩상태 감지용 방열판 프레임의 다른 실시예를 도시한 평면도.Figure 5 is a plan view showing another embodiment of the heat sink frame for detecting the wire bonding state according to the present invention.

도 6 은 본 발명에 의한 와이어 본딩상태 감지방법에 대한 개략적인 상태도.Figure 6 is a schematic state diagram for a wire bonding state detection method according to the present invention.

도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings

2: 인쇄회로기판 200: 방열판 프레임2: printed circuit board 200: heat sink frame

210: 방열판 220: 레일부210: heat sink 220: rail portion

222: 검사용 도전패드 230: 그라운드용 금속패드222: conductive pad for inspection 230: metal pad for the ground

본 발명은 반도체 패키지 및 제조에 관한 것으로서, 보다 상세하게는 반도체 패키지의 제조공정에 사용되는 방열판 프레임과 상기 방열판 프레임을 이용한 와이어 본딩상태 감지방법에 관한 것이다. The present invention relates to a semiconductor package and to a manufacturing method, and more particularly, to a heat sink frame used in a manufacturing process of a semiconductor package and a wire bonding state sensing method using the heat sink frame.

일반적으로 반도체패키지는 그 종류에 따라 수지밀봉 패키지, TCP(Tape Carrier Package)패키지, 글래스밀봉 패키지, 금속밀봉 패키지 등이 있다. 이와 같은 반도체 패키지는 실장방법에 따라 삽입형과 표면실장(Surface Mount Technology,SMT)형으로 분류하게 되는데, 삽입형으로서 대표적인 것은 DIP(Dual In-line Package), PGA(Pin Grid Array) 등이 있고, 표면실장형으로서 대표적인 것은 QFP(Quad Flat Package), PLCC(Plastic Leaded Chip Carrier), CLCC(Ceramic LeadedChip Carrier), BGA(Ball Grid Array) 등이 있다.Generally, semiconductor packages include resin sealing packages, tape carrier packages (TCP), glass sealing packages, and metal sealing packages. Such semiconductor packages are classified into insert type and surface mount technology (SMT) type according to the mounting method. Representative types include insert type dual in-line package (DIP) and pin grid array (PGA). Typical examples of the mounting type include QFP (Quad Flat Package), PLCC (Plastic Leaded Chip Carrier), CLCC (Ceramic Leaded Chip Carrier), and BGA (Ball Grid Array).

최근에는 전자제품의 소형화에 따라 인쇄회로기판의 부품 장착도를 높이기 위해서 삽입형 반도체패키지 보다는 표면실장형 반도체패키지가 널리 사용되고 있는데, 이러한 종래의 패키지 구조를 도 1을 참조하여 설명하면 다음과 같다.Recently, in order to increase the mounting degree of components of a printed circuit board according to the miniaturization of an electronic product, a surface mount type semiconductor package is widely used, rather than an insert type semiconductor package, which will be described with reference to FIG.

도 1 은 BGA(Ball Grid Array) 패키지의 단면도를 도시한 것으로써, 도면을 참조하면 인쇄회로기판(2)의 중앙 위치에 반도체 칩(4)이 부착되고, 인쇄회로기판(2)의 구리패턴(22)과 반도체 칩(4)간은 전도성 와이어(6)로 본딩 접속되어 있으며, 상기 반도체 칩(4)과 전도성 와이어(6)를 보호하기 위하여 칩(4)을 포함한 인쇄회로기판(2)의 표면이 에폭시등의 봉지재(9)로 봉지된다. 상기 구리패턴(22)의 표면으로는 전도성 와이어(6)가 접속되는 부위를 제외하고 솔더마스크(24)가 도포되어 외부와 절연된다. 1 is a cross-sectional view of a ball grid array (BGA) package. Referring to the drawings, a semiconductor chip 4 is attached to a central position of a printed circuit board 2, and a copper pattern of the printed circuit board 2 is illustrated. The printed circuit board 2 including the chip 4 is bonded between the 22 and the semiconductor chip 4 by a conductive wire 6 to protect the semiconductor chip 4 and the conductive wire 6. The surface of is sealed with a sealing material 9 such as epoxy. The solder mask 24 is applied to the surface of the copper pattern 22 except for a portion to which the conductive wire 6 is connected and insulated from the outside.

상기 인쇄회로기판(2)의 배면에는 표면의 구리패턴(22)을 통해 비아홀(23)로 접속된 솔더 볼(8)을 부착하여 마더보드(도시 생략함) 등에 패키지를 실장할 때 외부접속단자로 사용한다. When connecting the solder ball 8 connected to the via hole 23 through the copper pattern 22 on the surface of the printed circuit board 2 to mount the package on a motherboard (not shown), an external connection terminal Used as.

상술한 반도체 패키지는 전기신호가 인가되었을 때 반도체 칩과 인쇄회로기판에서 다량의 열이 발생된다. 이와 같이 발생된 열을 외부로 방출시키지 못하게 되면 반도체 칩의 수명이 단축되어 신뢰성이 저하된다. The semiconductor package described above generates a large amount of heat from the semiconductor chip and the printed circuit board when an electrical signal is applied. If the generated heat is not released to the outside, the lifespan of the semiconductor chip is shortened and reliability is lowered.

상기와 같은 문제를 해결하기 위하여 반도체 패키지에 방열판을 부착하게 되는데 상기 방열판을 부착한 일반적인 반도체 패키지를 도 2에 도시하였다. In order to solve the above problems, a heat sink is attached to the semiconductor package, and a general semiconductor package to which the heat sink is attached is shown in FIG. 2.

도면을 참조하면, 상기 반도체 패키지의 인쇄회로기판(2) 배면에는 통상 구리(Cu) 또는 알루미늄(Al)과 같이 열전도성이 뛰어난 재료로 대략 인쇄회로기판의 크기와 동일하게 제조된 방열판(10)을 부착한다. Referring to the drawings, a heat sink 10 formed on the back of the printed circuit board 2 of the semiconductor package is generally made of a material having excellent thermal conductivity such as copper (Cu) or aluminum (Al). Attach.

통상의 반도체 패키지는 와이어 본딩 공정 중에 와이어가 제대로 접속연결되었는지 검사하는 과정이 있다. 상기 과정을 와이어 본딩 모니터링 시스템(이하 WBMS:Wire Bonding Monitoring System)이라 한다. Conventional semiconductor packages have a process of inspecting whether the wires are properly connected during the wire bonding process. This process is referred to as a wire bonding monitoring system (hereinafter referred to as WBMS).

WBMS란 반도체 칩과 접지부간에 전기신호를 인가하여 와이어 본딩이 제대로 되었을 때는 미세하나마 전류가 흐르게 되고 와이어 본딩이 제대로 되지 않았을 때는 전류가 흐르지 않는 원리를 이용하여 와이어 본딩 접속상태를 검사하는 과정이다. WBMS is a process of checking the state of the wire bonding connection by applying an electric signal between the semiconductor chip and the grounding part. However, when the wire bonding is fine, the current flows, and when the wire bonding is not properly, the current does not flow.

도 3에서 보는 바와 같이 홀더에 설치된 보빈(102)의 선단부 와이어(104)를 본딩헤드(106)의 여러부위에 구비된 롤러와 와이어클램프(108)를 거쳐 캐피러리(110)의 내부에 위치시키고, 인쇄회로기판(2)이 공급안치된 마운트(112)와 와이어클램프(108) 사이에는 접지선(G)을 연결시킨다. As shown in FIG. 3, the tip wire 104 of the bobbin 102 installed in the holder is positioned inside the capital 110 through rollers and wire clamps 108 provided at various portions of the bonding head 106. The ground wire G is connected between the mount 112 to which the printed circuit board 2 is supplied and the wire clamp 108.

이러한 와이어 본딩 머신은 공급부에서 인쇄회로기판이 공급되면 캐피러리(110)의 내부에 구비된 선단부 와이어(104)가 전극팁(114)에서 발생하는 불꽃에 의해 와이어의 선단을 볼형상으로 용융시키고, 용융된 선단부 와이어(104)는 반도체 칩의 본딩패드(4a)로 이동하여 1차본딩을 완료한다. In the wire bonding machine, when the printed circuit board is supplied from the supply unit, the tip wire 104 provided inside the capillary 110 melts the tip of the wire into a ball shape by sparks generated from the electrode tip 114. The melted tip wire 104 moves to the bonding pad 4a of the semiconductor chip to complete the primary bonding.

반도체 칩의 본딩패드(4a)에 와이어(6)의 본딩이 완료되면 캐피러리(110)는 인쇄회로기판의 본드핑거(6a)측으로 이동하여 상기와 같은 방법으로 2차 본딩을 완료한다. When the bonding of the wire 6 to the bonding pad 4a of the semiconductor chip is completed, the capacitor 110 moves to the bond finger 6a side of the printed circuit board to complete the secondary bonding in the same manner as described above.

이렇게 와이어(6)의 본딩이 이루어질 때 본딩패드(4a)와 인쇄회로기판(2)의 본드핑거(6a)에 본딩이 견고하게 이루어져 있는가를 확인하기 위해 와이어클램프(108)가 선단부 와이어(104)를 클램프하고 동시에 와이어클램프(108)에 접촉하고 있는 접지선에 직류전압을 인가시킴에 따라 본딩패드(4a)나 본드핑거(6a)에서 그라운드로 흐르는 전류량을 검출하므로서, 본딩의 불량이 발생되면 WBMS의 제어신호에 의해 와이어 본딩 머신의 작동을 정지시키도록 한다. When the bonding of the wires 6 is performed, the wire clamp 108 is connected to the tip wire 104 to check whether the bonding is firmly formed on the bonding pads 4a and the bond fingers 6a of the printed circuit board 2. By applying a DC voltage to the ground wire which is clamped and at the same time contacting the wire clamp 108, the amount of current flowing from the bonding pad 4a or the bond finger 6a to the ground is detected. The signal causes the wire bonding machine to stop operating.

그러나 종래에는 방열판(10)이 부착되어 있지 않은 반도체 패키지의 와이어 본딩공정에서는 상기 WBMS 공정이 원할히 수행될 수 있었으나 방열판(10)이 부착되는 반도체 패키지 제조 공정에서는 WBMS를 실시하지 못하여 작업자의 육안으로 와이어 본딩상태를 확인해야하는 문제점이 있었다. However, in the related art, the WBMS process may be smoothly performed in the wire bonding process of the semiconductor package in which the heat sink 10 is not attached. However, in the semiconductor package manufacturing process in which the heat sink 10 is attached, the WBMS process cannot be performed. There was a problem that the bonding state should be checked.

본 발명은 상술한 종래 기술의 문제점을 해결하기 위하여 안출된 발명으로써, 방열판 프레임의 레일부를 활용하여 WBMS 공정을 수행할 수 있도록 부가수단을 형성한 와이어 본딩상태 감지용 방열판 프레임과 이를 이용한 와이어 본딩상태 감지방법을 제공하는 것을 목적으로 한다. The present invention has been made in order to solve the above-mentioned problems of the prior art, the heat sink frame for detecting the wire bonding state formed by the additional means to perform the WBMS process using the rail portion of the heat sink frame and the wire bonding state using the same It is an object to provide a detection method.

상술한 목적을 달성하기 위하여 본 발명은 대략 직사각형태의 유닛단위로 구성된 방열판; 상기 방열판에 형성된 그라운드용 금속패드; 상기 방열판의 양측으로 직선상으로 형성되어 있으며, 다수개의 방열판을 고정지지하는 레일부; 상기 레일부에 형성된 검사용 도전패드를 포함하는 것을 특징으로 하는 와이어 본딩상태 감지용 방열판 프레임을 제공한다. In order to achieve the above object, the present invention is a heat sink comprising a unit unit of a substantially rectangular shape; A ground metal pad formed on the heat sink; A rail unit which is formed in a straight line on both sides of the heat sink, and supports a plurality of heat sinks; It provides a heat sink frame for detecting the wire bonding state comprising a conductive pad for inspection formed on the rail portion.

또한, 본 발명은 방열판이 부착된 반도체 패키지의 와이어 본딩 공정중 와이어 본딩상태를 감지하는 방법에 있어서, 상기 와이어 본딩 모니터의 일측 단자는 선단부 와이어 또는 와이어 클램프와 접속시키고, 상기 와이어 본딩 모니터의 타측 단자는 제 1 항의 검사용 도전패드에 접속시킨 후 직류전압을 흘려 전류량을 검출하는 것을 특징으로 하는 와이어 본딩 상태 감지방법을 제공한다. The present invention also provides a method for detecting a wire bonding state during a wire bonding process of a semiconductor package with a heat sink, wherein one terminal of the wire bonding monitor is connected to a tip wire or a wire clamp, and the other terminal of the wire bonding monitor. The present invention provides a wire bonding state sensing method characterized by detecting the amount of current by flowing a DC voltage after connecting to the test conductive pad of claim 1.

본 발명의 구성 및 방법에 대하여 첨부한 도면을 참조하여 보다 상세하게 설명한다. 참고로 본 발명을 설명하기에 앞서, 설명의 중복을 피하기 위하여 종래 기술과 일치하는 부분에 대해서는 종래 도면 부호를 그대로 인용하기로 한다. The configuration and method of the present invention will be described in more detail with reference to the accompanying drawings. For reference, prior to describing the present invention, in order to avoid duplication of description, the same reference numerals will be used as to the same parts as the prior art.

도 4 는 본 발명에 의한 와이어 본딩상태 감지용 방열판 프레임(200)의 구조 를 개략적으로 도시한 평면도이다.4 is a plan view schematically illustrating a structure of a heat sink frame 200 for detecting a wire bonding state according to the present invention.

도면을 참조하면, 상기 방열판 프레임(200)에서 실제 반도체 패키지에 사용되는 방열판(210)은 대략 직사각형태로 형성되어 있으며 방열판(210)에 부착되는 인쇄회로기판과 그 형태가 동일하다. 상기 방열판(210)은 하나의 프레임(200)에 4~7개의 유닛으로 구비되어 있으며, 각각의 방열판 유닛들은 모두 레일부(220)에 고정되어 있다. 상기 레일부(220)는 방열판(210)의 대향되는 양변에 평행하게 설치되고 각 방열판(210)은 사방의 모서리부가 레일부(220)에 연결되어 고정된다. Referring to the drawings, the heat sink 210 used in the actual semiconductor package in the heat sink frame 200 is formed in a substantially rectangular shape and the shape thereof is the same as the printed circuit board attached to the heat sink 210. The heat sink 210 is provided with four to seven units in one frame 200, each of the heat sink unit is fixed to the rail unit 220. The rail unit 220 is installed in parallel to the opposite sides of the heat sink 210, each of the heat sink 210 is fixed to the four corners are connected to the rail portion 220.

상기 방열판(210)에는 와이어 본딩 공정에 투입되기 전에 인쇄회로기판(2)이 부착되는데 도 4의 일측 방열판상에는 상기 인쇄회로기판(2)이 부착된 상태를 도시하였다. 상기 인쇄회로기판(2)의 중앙에는 대략 사각형의 홀이 형성되어 반도체 칩(4)이 방열판(210)에 직접 부착되도록 하는 구조를 이루고 있다. 반도체 칩이 부착되는 주변부에는 그라운드용 금속패드(230)가 형성되어 있으며, 상기 반도체 칩의 접지패드와 상기 그라운드용 금속패드(230)가 전도성 와이어(6)로 본딩되어짐에 의해 그라운드용 금속패드(230)가 반도체 칩의 접지역할을 수행한다. The printed circuit board 2 is attached to the heat sink 210 before being put into the wire bonding process. The printed circuit board 2 is shown on one side of the heat sink. A substantially rectangular hole is formed in the center of the printed circuit board 2 so that the semiconductor chip 4 is directly attached to the heat sink 210. A ground metal pad 230 is formed at a periphery to which the semiconductor chip is attached, and the ground pad of the semiconductor chip and the ground metal pad 230 are bonded to the conductive wire 6 to bond the ground metal pad ( 230 performs a grounding role of the semiconductor chip.

상기 그라운드용 금속패드(230)는 반도체 칩의 패드와 전도성 와이어에 의해서 전기접속되는데, 와이어 본딩이 용이하게 될 수 있도록 방열판(210)의 그라운드 금속패드부의 일부를 도금한다. The ground metal pad 230 is electrically connected to the pad of the semiconductor chip by a conductive wire, and plate a part of the ground metal pad portion of the heat sink 210 to facilitate wire bonding.

상기 그라운드용 금속패드(230)를 도금시에는 은(Ag) 도금을 하거나 또는 니켈(Ni)/은(Ag) 도금을 실시한다. 이와 같은 이유는 보통 구리로 이루어진 방열판(210)의 특성상 산화되기 쉬워 와이어 본딩이 정확히 이루어지지 못하므로 와이어 본딩 신뢰도를 확보하기 위해 상술한 도금을 수행하는 것이다. When the ground metal pad 230 is plated, silver (Ag) plating or nickel (Ni) / silver (Ag) plating is performed. The reason for this is that since the wire bonding is not easily made due to oxidation of the heat sink 210 made of copper, the above-described plating is performed to secure wire bonding reliability.

상기와 같이 방열판(210)에 그라운드용 금속패드(230)를 설치함으로써 반도체 칩(4) 및 인쇄회로기판(2)을 통하는 전기신호는 와이어 본딩 공정 중에 용이하게 접지될 수 있다. By providing the ground metal pad 230 on the heat sink 210 as described above, the electrical signals through the semiconductor chip 4 and the printed circuit board 2 can be easily grounded during the wire bonding process.

또한 방열판(210) 자체가 도전체이므로 그라운드 신호는 방열판(210)의 금속패드(230)를 통해 방열판 전체로 연결되고, 아울러 레일부(220)까지 접속된다. In addition, since the heat sink 210 itself is a conductor, the ground signal is connected to the entire heat sink through the metal pad 230 of the heat sink 210 and is also connected to the rail unit 220.

상기 방열판 프레임의 레일부(220)에는 본 발명에 의한 검사용 도전패드(222)가 설치된다. 상기 도전패드(222)는 방열판(210) 자체가 도전체이므로 그대로 사용할 수도 있으나 방열판(210)의 전면에 통상 블랙 옥사이드가 도포되어 확실한 도전성을 확보하기 어려우므로 프루브(300)의 접속시 검출신뢰성을 확보하기 위하여 그라운드용 금속패드(230)와 마찬가지로 은(Ag)도금 또는 니켈(Ni)/은(Ag)도금을 수행하는 것이 바람직하다. The conductive conductive pad 222 for inspection according to the present invention is installed on the rail portion 220 of the heat sink frame. The conductive pad 222 may be used as it is because the heat sink 210 itself is a conductor, but since black oxide is normally applied to the front surface of the heat sink 210, it is difficult to secure reliable conductivity, so that the detection reliability of the probe 300 may be reduced. In order to secure, it is preferable to perform silver (Ag) plating or nickel (Ni) / silver (Ag) plating like the ground metal pad 230.

WBMS는 종래 기술에서 언급한 바와 같이 와이어나 혹은 와이어와 접촉된 와이어 클램프를 한쪽 단자에 접촉시키고, 다른 단자는 그라운드에 접촉시켜 직류전압을 인가시킴에 따라 본딩패드에서 그라운드로 흐르는 전류량을 검출함으로써 와이어 본딩상태를 체크하고, 만일 불량이 발생하면 내부에서 제어신호를 보내 와이어 본딩 머신의 작동을 중지시킨다. As mentioned in the prior art, the WBMS contacts a wire or a wire clamp in contact with the wire to one terminal, and the other terminal contacts the ground to detect the amount of current flowing from the bonding pad to the ground by applying a DC voltage. Check the bonding state, and if a failure occurs, send a control signal from inside to stop the operation of the wire bonding machine.

본 발명에서는 WBMS의 프루브를 그라운드 대신 방열판 레일부에 형성된 검사용 도전패드(222)에 접촉시킴으로써 동일한 효과를 얻을 수 있도록 구성되어 있다. In the present invention, the same effect can be obtained by bringing the probe of the WBMS into contact with the conductive pad 222 for inspection formed in the heat sink rail portion instead of the ground.

전술한 바와 같이, 그라운드용 금속패드(230)는 방열판(210)에 형성되고, 상 기 방열판(210)은 도전체이므로 양측 레일부(220)까지 그라운드 신호가 연결되도록 되어 있으며 레일부(220)의 검사용 도전패드(222)는 상기와 같은 경로를 따라 그라운드 신호를 입력 받을 수 있다. As described above, the ground metal pad 230 is formed on the heat sink 210, and since the heat sink 210 is a conductor, the ground signal is connected to both rail parts 220, and the rail part 220 is provided. The test conductive pad 222 may receive a ground signal along the path as described above.

다시 말해서, 종래 접지선에 연결하는 것과 본 발명에 의해 방열판 레일부의 검사용 도전패드(222)에 연결하는 것은 회로 구조상 동일한 것이 된다. In other words, the connection to the conventional ground wire and the connection to the inspection conductive pad 222 for the heat sink rail part according to the present invention are the same in terms of circuit structure.

이하 상기 본 발명에 관련된 방열판 레일부의 검사용 도전패드(222)에 의한 WBMS의 작용에 대하여 설명하면 다음과 같다. Hereinafter, the operation of the WBMS by the conductive pad 222 for inspecting the heat sink rail portion according to the present invention will be described.

와이어 본딩공정 중 와이어 본딩 모니터기의 일측 단자는 지속적으로 선단부 와이어(104)에 접속되어 있고, 타측 단자 역할을 하는 프루브(300)는 지속적으로 방열판 레일부(220)의 검사용 도전패드(222)에 접속되어 있다. One terminal of the wire bonding monitor is continuously connected to the front end wire 104 during the wire bonding process, and the probe 300 serving as the other terminal is continuously provided with the conductive pad 222 for inspecting the heat sink rail part 220. Is connected to.

와이어 본딩 공정은 각 반도체 칩의 접속패드와 인쇄회로기판의 본딩패드간을 전도성 와이어(통상 골드(Au), 알루미늄(Al), 구리(Cu)등을 이용한다)로 접속시키는데, 개별작업을 수행한다. The wire bonding process connects the connection pads of each semiconductor chip and the bonding pads of the printed circuit board with conductive wires (usually using gold (Au), aluminum (Al), copper (Cu), etc.), and performs individual operations. .

즉, 칩의 접속패드 하나와 인쇄회로기판의 본딩패드 하나를 본딩시킨 후 다음 작업으로 이동되는데 이때 와이어 본딩 모니터기는 전술한 상태에서 지속적으로 전압을 검출한다. That is, the bonding pad of the chip and the bonding pad of the printed circuit board are bonded and then moved to the next operation. At this time, the wire bonding monitor continuously detects the voltage in the above state.

만일 그라운드용 금속패드와 레일부의 검사용 도전패드사이에서 전류가 검출되지 않을 때에는 흐르지 않게 되면 와이어가 정확히 접속연결되지 못한 것으로 간주하여 재작업을 실시한다. If no current flows between the ground metal pad and the conductive conductive pad for inspection of the rail, the wire is regarded as not properly connected and reworked.

도 5 에는 본 발명에 의한 와이어 본딩상태 감지용 방열판 프레임의 다른 실 시예를 도시하였고 도 6 에는 본 발명에 의한 와이어 본딩상태 감지방법에 대하여 도시하였다. 5 illustrates another embodiment of a heat sink frame for detecting a wire bonding state according to the present invention, and FIG. 6 illustrates a method for detecting a wire bonding state according to the present invention.

도면에서 보는 바와 같이, 상기 방열판 프레임(200)의 방열판(210) 구조는 도 3에 도시된 방열판의 구조와 동일하다. 단지 도 4에서는 그라운드 금속패드가 반도체 칩의 주변에 형성되었으나 본 실시예에서는 반도체 칩이 부착되는 부위에 그라운드용 금속패드(240)가 형성되고 상기 금속패드 위로 반도체 칩이 부착되게 된다. As shown in the figure, the heat sink 210 structure of the heat sink frame 200 is the same as the structure of the heat sink shown in FIG. In FIG. 4, the ground metal pad is formed around the semiconductor chip. However, in the present embodiment, the ground metal pad 240 is formed at a portion to which the semiconductor chip is attached, and the semiconductor chip is attached onto the metal pad.

반도체 칩이 방열판에 부착될 때는 다이 어태치(attach)용 어드헤시브(adheasive)를 칩과 방열판 사이에 도포하여 부착하는데 이때 상기 어드헤시브(도시 생략)가 전도성을 지니는 재료를 사용하여 반도체 칩과 방열판의 금속패드간에 전기접속이 가능하도록 한다. When the semiconductor chip is attached to the heat sink, an adhesive for die attach is applied between the chip and the heat sink to attach the semiconductor chip. The semiconductor chip is made of a conductive material using an electrically conductive material (not shown). Make electrical connections between the metal pads on the heat sink.

상기 반도체 칩의 전기신호 중 방열판의 금속패드(240)를 통해 그라운드 신호가 이동되도록 함으로써 그라운드 신호가 방열판 전체로 연결될 수 있도록 한다. 상기 방열판으로 연결되는 반도체 칩의 그라운드 신호는 방열판과 연결된 레일부(220)의 검사용 도전패드(222)에까지 연결되어 도 4에서 설명한 바와 같이 동일한 효과를 얻을 수 있게 된다. The ground signal is moved through the metal pad 240 of the heat sink among the electrical signals of the semiconductor chip so that the ground signal can be connected to the entire heat sink. The ground signal of the semiconductor chip connected to the heat sink is connected to the test conductive pad 222 of the rail unit 220 connected to the heat sink, thereby obtaining the same effect as described with reference to FIG. 4.

도 5의 구성에 도시된 검사용 도전패드(222)에 의해 와이어 본딩상태를 감지, 체크하는 과정은 도 4의 실시예와 동일하므로 자세한 내용은 생략하기로 한다. The process of detecting and checking the wire bonding state by the test conductive pad 222 shown in FIG. 5 is the same as that of the embodiment of FIG. 4, and thus a detailed description thereof will be omitted.

본 발명은 상술한 와이어 본딩상태 감지용 방열판 프레임을 제공함으로써, 보다 향상된 와이어 본딩상태 감지방법을 제공한다. The present invention provides a more improved wire bonding state detection method by providing a heat sink frame for detecting the wire bonding state described above.                     

도 6 은 상술한 와이어 본딩상태 감지방법에 관해 개략적으로 도시한 상태도이다. 6 is a diagram schematically illustrating the wire bonding state sensing method described above.

도면을 참조하면, 먼저 도 4 또는 도 5에서 상술한 구성으로 이루어진 방열판 프레임의 방열판에 설치된 그라운드용 금속패드에 의해 그라운드 신호가 방열판을 통해 레일부의 검사용 도전패드에 접속되므로 와이어 본딩 모니터기의 일측단자인 프루브를 상기 검사용 도전패드에 접속시킨다. Referring to the drawings, the ground signal is first connected to the conductive conductive pad for inspection of the rail through the heat sink by the ground metal pad installed on the heat sink of the heat sink frame having the above-described configuration in FIG. 4 or 5. A probe, which is one terminal, is connected to the conductive pad for inspection.

와이어 본딩 공정 중 캐필러리에서 인출되는 선단부 와이어 내지 상기 선단부 와이어를 클램핑하는 클램프에 상기 와이어 본딩 모니터기의 타측단자를 접속시킨다. The other end of the wire bonding monitor is connected to a tip wire drawn out of the capillary or a clamp clamping the tip wire during the wire bonding process.

와이어 본딩 모니터기에서는 반도체 칩의 접속패드와 인쇄회로기판의 본딩패드간을 와이어로 본딩할 때마다 직류전압에 의한 전류량을 검출하여 본딩이 제대로 되어 전류가 검출되면 공정을 계속 진행토록 하고, 전류가 검출되지 않으면 제어신호를 보내어 와이어 본딩 작동을 중단하도록 한다. In the wire bonding monitor, whenever the bonding pad of the semiconductor chip and the bonding pad of the printed circuit board are bonded by wire, the current is detected by DC voltage and the bonding is performed. If the current is detected, the process is continued. If not detected, a control signal is sent to stop the wire bonding operation.

상술한 바와 같은 본 발명에 의한 와이어 본딩상태 감지용 방열판 프레임을 채용하고, 또한 이를 이용하여 와이어 본딩상태를 감지하면, 방열판이 부착된 반도체 패키지의 와이어 본딩 공정 중에도 와이어 본딩상태를 정확하게 판별할 수 있게 된다. By adopting the heat sink frame for detecting the wire bonding state according to the present invention as described above, and detecting the wire bonding state by using the same, the wire bonding state can be accurately determined even during the wire bonding process of the semiconductor package to which the heat sink is attached. do.

방열판이 부착된 반도체 패키지의 와이어 본딩 공정에서 상기 방열판 프레임의 레일부에 그라운드 신호가 접속된 검사용 도전패드를 설치함으로써, 방열판이 부착된 인쇄회로기판의 와이어 본딩 공정에서도 와이어 본딩 모니터링 시스템을 적용할 수 있게 되어 와이어 본딩 신뢰도를 향상시킬 수 있다. In the wire bonding process of the semiconductor package with a heat sink, a conductive pad for inspection in which a ground signal is connected to the rail portion of the heat sink frame is installed to apply a wire bonding monitoring system to the wire bonding process of a printed circuit board with a heat sink. It is possible to improve the wire bonding reliability.

또한, 기존 방열판이 부착된 인쇄회로기판의 와이어 본딩상태를 확인할 때 작업자들이 수동으로 작업하던 것을 와이어 본딩 모니터 시스템에서 자동으로 체크함으로 공정시간이 단축되고 이로인해 생산성이 증대되는 효과가 있다. In addition, when checking the wire bonding state of a conventional printed circuit board with a heat sink, the wire bonding monitor system automatically checks that the workers are working manually, thereby shortening the process time and thereby increasing productivity.

Claims (4)

대략 직사각형태의 유닛단위로 구성된 방열판;A heat sink composed of unit units having a rectangular shape; 상기 방열판에 형성된 그라운드용 금속패드;A ground metal pad formed on the heat sink; 상기 방열판의 양측으로 직선상으로 형성되어 있으며, 다수개의 방열판을 고정지지하는 레일부;A rail unit which is formed in a straight line on both sides of the heat sink, and supports a plurality of heat sinks; 상기 레일부에 형성된 검사용 도전패드를 포함하는 것을 특징으로 하는 와이어 본딩상태 감지용 방열판 프레임Heat sink frame for detecting a wire bonding state comprising a conductive pad for inspection formed on the rail portion 제 1 항에 있어서, The method of claim 1, 상기 그라운드용 금속패드는 방열판에서 칩 부착부 주위에 형성된 것을 특징으로 하는 와이어 본딩상태 감지용 방열판 프레임The ground metal pad is a heat sink frame for sensing the wire bonding state, characterized in that formed around the chip attachment portion in the heat sink 제 1 항에 있어서, The method of claim 1, 상기 그라운드용 금속패드는 방열판의 칩 부착면에 형성된 것을 특징으로 하는 와이어 본딩상태 감지용 방열판 프레임 The ground metal pad is a heat sink frame for detecting the wire bonding state, characterized in that formed on the chip attachment surface of the heat sink 방열판이 부착된 반도체 패키지의 와이어 본딩 공정중 와이어 본딩상태를 감지하는 방법에 있어서, In the method of detecting a wire bonding state of the wire bonding process of the semiconductor package with a heat sink, 상기 와이어 본딩 모니터의 일측 단자는 선단부 와이어 또는 와이어 클램프 와 접속시키고, 상기 와이어 본딩 모니터의 타측 단자는 제 1 항의 검사용 도전패드에 접속시킨 후 직류전압을 흘려 전류량을 검출하는 것을 특징으로 하는 와이어 본딩 상태 감지방법.One terminal of the wire bonding monitor is connected to a tip wire or a wire clamp, and the other terminal of the wire bonding monitor is connected to the test conductive pad of claim 1, and then a DC voltage is applied to detect a current amount. State detection method.
KR1020010040918A 2001-07-09 2001-07-09 Heatsink Frame ? Monitoring Method for Wire Bonding Monitoring System KR100752221B1 (en)

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JPH039541A (en) * 1989-06-07 1991-01-17 Toshiba Corp Manufacture of semiconductor device
JPH0737949A (en) * 1993-07-16 1995-02-07 Mitsubishi Electric Corp Lead frame, of semiconductor device semiconductor device testing contactor, and manufacture of semiconductor device
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