KR100740894B1 - Liquid epoxy resin composition for underfill application and a semiconductor stack package using thereof - Google Patents
Liquid epoxy resin composition for underfill application and a semiconductor stack package using thereof Download PDFInfo
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- KR100740894B1 KR100740894B1 KR1020050136066A KR20050136066A KR100740894B1 KR 100740894 B1 KR100740894 B1 KR 100740894B1 KR 1020050136066 A KR1020050136066 A KR 1020050136066A KR 20050136066 A KR20050136066 A KR 20050136066A KR 100740894 B1 KR100740894 B1 KR 100740894B1
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- 239000000203 mixture Substances 0.000 title claims abstract description 40
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000003822 epoxy resin Substances 0.000 claims abstract description 21
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 21
- 239000011256 inorganic filler Substances 0.000 claims abstract description 20
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 20
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 14
- 239000004593 Epoxy Substances 0.000 claims abstract description 4
- 239000003054 catalyst Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 10
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011342 resin composition Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 claims description 3
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 3
- 229940106691 bisphenol a Drugs 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 229920003986 novolac Polymers 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 239000005350 fused silica glass Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical group CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 claims 1
- 150000008065 acid anhydrides Chemical class 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 description 8
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical class C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000035939 shock Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
- C08G59/4223—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof aromatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/10—Epoxy resins modified by unsaturated compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/66—Substances characterised by their function in the composition
- C08L2666/72—Fillers; Inorganic pigments; Reinforcing additives
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
본 발명은 고신뢰성 반도체 적층 패키지 언더필용 액상 에폭시 수지 조성물에 대한 것으로, 보다 상세하게는 저점도 액상 에폭시수지 및 산무수물계 경화제를 사용하여 우수한 유동성에 의한 양호한 간극 충진성을 가지며, 무기충전제를 사용함으로써 패키지의 신뢰성을 향상시킨 반도체 적층 패키지 언더필용 액상 에폭시 수지 조성물에 관한 것으로, 에폭시 수지 10∼30 중량%, 경화제 10∼30 중량%, 경화촉진제 0.1∼5 중량%, 및 무기충전제 50∼80 중량%를 포함하며, 점도가 2,000∼40,000cps인 것을 특징으로 한다.The present invention relates to a liquid epoxy resin composition for a high reliability semiconductor laminate package underfill, and more particularly, using a low viscosity liquid epoxy resin and an acid anhydride-based curing agent, and having a good gap filling property due to excellent fluidity, and using an inorganic filler. The present invention relates to a liquid epoxy resin composition for semiconductor laminate package underfill, which improves the reliability of a package, thereby comprising 10 to 30% by weight of epoxy resin, 10 to 30% by weight of curing agent, 0.1 to 5% by weight of curing accelerator, and 50 to 80% by weight of inorganic filler. %, And the viscosity is characterized in that 2,000 to 40,000cps.
액상 에폭시, 저점도, 언더필, 산무수물, 무기충전제, 반도체, 적층 패키지 Liquid epoxy, low viscosity, underfill, acid anhydride, inorganic filler, semiconductor, laminated package
Description
본 발명은 고신뢰성 반도체 언더필용 액상 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 복수개의 단위 패키지를 3차원으로 적층하여 실장된 적층 패키지의 단위 패키지간 및 적층 패키지와 회로 기판간의 전기적으로 접속되는 부위에 열적, 기계적 신뢰도를 향상 시키기 위하여 언더필재로 사용되는 고신뢰성 액상 에폭시 수지 조성물에 관한 것이다. The present invention relates to a liquid epoxy resin composition for high reliability semiconductor underfill, and more particularly, a portion that is electrically connected between the unit package of the laminated package mounted by stacking a plurality of unit packages in three dimensions and between the laminated package and the circuit board. It relates to a high reliability liquid epoxy resin composition used as an underfill material to improve thermal and mechanical reliability.
전자제품의 소형화, 경박화, 다기능화, 대용량화에 따라 반도체 소자 및 패키지의 봉지 및 실장방법 등도 다변화되는 추세이다. 특히 복수 개의 반도체 소자를 3차원으로 적층하여 제조된 3차원 적층 칩 패키지(한국 특2003-0002476)와 복수개의 단위 패키지를 3차원으로 적층하여 제조된 3차원 적층 패키지(한국 특2004-0046744)등의 패키지를 사용하여 경박단소화, 다기능화 및 대용량화가 가속 되고 있다. As electronic products become smaller, thinner, more versatile, and larger in capacities, the encapsulation and mounting methods of semiconductor devices and packages are also diversifying. In particular, a three-dimensional stacked chip package (Korea Patent 2003-0002476) manufactured by stacking a plurality of semiconductor devices in three dimensions and a three-dimensional stack package (Korea Patent 2004-0046744) manufactured by stacking a plurality of unit packages in three dimensions Lightweight, shorter, more versatile and larger capacities are accelerating with the package.
그러나 상기의 적층 패키지의 경우 단위 패키지의 두께가 두꺼울 경우 최종 적층 패키지의 두께가 두꺼워 반도체 제품의 경박단소화에 대한 대응이 떨어지는 단점이 발생하여 이를 극복하기 위하여 초박형화된 단위 반도체 패키지를 사용하여 솔더 볼 등의 땜납 접속을 통하여 단위 패키지간, 적층 패키지와 인쇄 회로 기판간을 전기적으로 연결하게 된다. 이러한 방식으로 실장된 패키지의 경우 단위 패키지의 얇은 두께로 인하여 기계적 강도가 매우 취약해 지는 단점이 있으며, 솔더 볼 등의 땜납 접속을 통하여 전기적으로 연결됨으로 인해 열충격 시험을 할 경우 회로 기판과 솔더 볼의 상이한 열팽창계수가 열적 스트레스를 유발하여 회로기판과 솔더 볼 간 연결상태 등에 대한 신뢰성 불량의 여지가 있다. However, in the case of the laminated package, when the unit package is thick, the thickness of the final laminate package is so thick that the shortcoming of thin and short reduction of semiconductor products occurs. The solder connection of the ball or the like electrically connects the unit packages, the laminated package, and the printed circuit board. In the case of the package mounted in this way, the mechanical strength becomes very weak due to the thin thickness of the unit package, and when the thermal shock test is performed due to the electrical connection through the solder connection such as the solder ball, Different thermal expansion coefficients induce thermal stress, which may lead to poor reliability of the connection state between the circuit board and the solder balls.
특히 최근 상기 패키지가 휴대용 전자 기기와 메모리 모듈 등에 사용이 확대되고 있으며, 이러한 적용에 있어 기존의 전자 기기에 비하여 외부적인 기계적, 열적 충격 요인이 크게 증가된다. 이러한 외부적 충격은 단위 패키지 자체의 파괴 및 단위 패키지와 솔더볼, 회로 기판과 솔더볼 간의 파괴를 수반한다. In particular, recently, the package has been increasingly used in portable electronic devices, memory modules, and the like, and the external mechanical and thermal shock factors are greatly increased in this application as compared to the conventional electronic devices. This external impact involves the destruction of the unit package itself and the breakdown between the unit package and the solder balls, the circuit board and the solder balls.
이러한 기계적, 열적 충격에 의한 응력을 완화하기 위하여 단위 패키지 사이, 적층 패키지와 기판 사이의 공간을 수지로 충진하는 공정이 언더필 공정이며 이에 사용되는 소재가 열경화성 수지인 액상 언더필재이다.In order to alleviate the stress caused by mechanical and thermal shock, the process of filling the space between the unit packages, the laminated package and the substrate with a resin is an underfill process, and the material used therein is a liquid underfill material which is a thermosetting resin.
이러한 측면을 고려해 볼 때 작업성 측면에서 통상적으로 25 ∼ 600㎛ 이내의 다층의 간극에 대한 빠른 침투에 의한 충진성을 확보하기 위하여 낮은 점도 및 고유동성을 달성하여야 하고, 신뢰성과 관련하여서는 솔더볼과 크게 차이가 나지 않도록 열팽창계수를 저하시키고, 기계적 충격을 견딜 수 있으며, 패키지간 밀착 성, 즉 접착성이 좋아야 한다.In view of this aspect, low viscosity and high fluidity must be achieved in order to ensure filling by rapid penetration into multilayer gaps within 25 to 600 μm in terms of workability. The coefficient of thermal expansion should be lowered so as not to make a difference, it must be able to withstand mechanical shocks, and the adhesion between packages, that is, adhesion should be good.
본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 본 발명의 목적은, 저점도 액상 에폭시수지 및 산무수물계 경화제를 사용하여 높은 무기 충전제 함량에도 불구하고 우수한 유동성에 의한 양호한 간극 충진성을 가지며, 높은 기계적 강도 및 낮은 열팽창계수, 낮은 흡수율을 달성하여, 패키지의 신뢰성을 향상시킬 수 있는 적층 반도체 패키지 언더필용 액상 에폭시 수지 조성물을 제공하는 것이다.The present invention is to solve the problems of the prior art as described above, an object of the present invention, using a low viscosity liquid epoxy resin and an acid anhydride-based curing agent, despite the high inorganic filler content, good gap fillability due to excellent fluidity It is to provide a liquid epoxy resin composition for laminated semiconductor package underfill that has a high mechanical strength, low coefficient of thermal expansion, low absorption rate, and can improve the reliability of the package.
본 발명의 그 밖의 목적, 특정한 장점 및 신규한 특징들은 이하의 발명의 상세한 설명과 바람직한 실시예로부터 더욱 분명해질 것이다.Other objects, specific advantages and novel features of the present invention will become more apparent from the following detailed description of the invention and the preferred embodiments.
그러므로 본 발명에 의하면 하기 화학식 1로 표시되는 에폭시 수지, 하기 화학식 2와 화학식 3으로 표시되는 경화제의 혼합물, 하기 화학식 4로 표시되는 경화촉매 및 입자 크기가 0.5∼20㎛인 무기충전제를 포함하는 것을 특징으로 하는 고신뢰성 반도체 언더필용 액상 에폭시 수지 조성물이 제공된다.Therefore, according to the present invention includes an epoxy resin represented by the following formula (1), a mixture of a curing agent represented by the following formula (2) and formula (3), a curing catalyst represented by the formula (4) and an inorganic filler having a particle size of 0.5 to 20㎛ A highly reliable liquid epoxy resin composition for semiconductor underfill is provided.
[화학식 1][Formula 1]
(상기 식에서 R은 수소 혹은 메틸기이다.)(Wherein R is hydrogen or a methyl group)
[화학식 2][Formula 2]
(상기 식에서 R1∼R3는 각각 독립적으로 탄소수 1∼4의 알킬 혹은 알케닐기이다.)(In the formula, R 1 to R 3 are each independently an alkyl or alkenyl group having 1 to 4 carbon atoms.)
[화학식 3][Formula 3]
[화학식 4][Formula 4]
(상기 식에서 R1∼R4는 각각 독립적으로 수소원자, 메틸기, 에틸기, 페닐기, 시아노에틸기, 벤질기 및 수산기 중 어느 하나이다.)(In the formula, R 1 to R 4 are each independently one of a hydrogen atom, a methyl group, an ethyl group, a phenyl group, a cyanoethyl group, a benzyl group, and a hydroxyl group.)
상기 에폭시 수지는 10∼30 중량%, 상기 경화제는 10∼30 중량%, 상기 경화촉매는 0.1∼5 중량%, 상기 무기충전제는 50∼80 중량%를 포함하는 것을 특징으로 한다.The epoxy resin is 10 to 30% by weight, the curing agent is 10 to 30% by weight, the curing catalyst is characterized in that it comprises 0.1 to 5% by weight, the inorganic filler comprises 50 to 80% by weight.
상기 무기충전재의 입자 크기가 0.5∼10㎛인 것을 특징으로 한다.The inorganic filler is characterized in that the particle size of 0.5 ~ 10㎛.
상기 반도체 언더필용 액상 에폭시 수지 조성물은 점도가 2,000∼40,000cps인 것을 특징으로 한다.The liquid epoxy resin composition for semiconductor underfill has a viscosity of 2,000 to 40,000 cps.
상기 에폭시 수지는 에폭시 당량이 150∼220이고, 점도는 300∼5,000cps인 비스페놀-A, 비스페놀-F, 수소화 비스페놀-A, 수소화 비스페놀-F 중 어느 하나 또는 그 혼합물인 것을 특징으로 한다.The epoxy resin is characterized in that any one or a mixture of bisphenol-A, bisphenol-F, hydrogenated bisphenol-A, hydrogenated bisphenol-F having an epoxy equivalent of 150 to 220 and a viscosity of 300 to 5,000 cps.
또한 본 발명에 의하면 상기 에폭시 수지에 나프탈렌계, 페놀노볼락계, 사이클로 알리파틱계, 아민계 다관능성 에폭시수지 중 어느 하나 또는 그 혼합물이 첨 가되는 것을 특징으로 하는 고신뢰성 반도체 언더필용 액상 에폭시 수지 조성물이 제공된다. In addition, according to the present invention, any one or a mixture of naphthalene-based, phenol novolac-based, cycloaliphatic-based, and amine-based polyfunctional epoxy resins is added to the epoxy resin. A composition is provided.
상기 무기충전제는 최대 입경이 80㎛ 미만인 용융 실리카 또는 합성 실리카인 것을 특징으로 한다.The inorganic filler is characterized in that the fused silica or synthetic silica having a maximum particle size of less than 80㎛.
상기 경화제는 상기 화학식 2 및 상기 화학식 3의 혼합물인 것을 특징으로 한다.The curing agent is characterized in that the mixture of Formula 2 and Formula 3.
본 발명에 의하면 상기 액상 에폭시 수지 조성물을 이용하여 제조된 것을 특징으로 하는 반도체 적층 패키지가 제공된다.According to the present invention, there is provided a semiconductor laminated package, which is manufactured using the liquid epoxy resin composition.
이하에서 본 발명에 따른 적층 반도체 패키지 언더필용 액상 에폭시 수지 조성물의 구성에 대하여 설명하기로 한다.Hereinafter, the configuration of the liquid epoxy resin composition for laminated semiconductor package underfill according to the present invention will be described.
본 발명의 고신뢰성 반도체 언더필용 액상 에폭시 수지 조성물은 에폭시 수지, 경화제, 경화촉매 및 무기충전제를 포함하여 이루어진다.The liquid epoxy resin composition for high reliability semiconductor underfill of the present invention comprises an epoxy resin, a curing agent, a curing catalyst and an inorganic filler.
본 발명에서 사용된 에폭시 수지는 비스페놀계 에폭시 수지로서, 하기 화학식 1의 구조를 갖는 에폭시 당량이 150∼220이고, 점도는 300∼5,000cps인 비스페놀-A, 비스페놀-F, 수소화 비스페놀-A, 수소화 비스페놀-F 중 어느 하나 또는 그 혼합물을 사용할 수 있다.The epoxy resin used in the present invention is a bisphenol-based epoxy resin, bisphenol-A, bisphenol-F, hydrogenated bisphenol-A, hydrogenated epoxy equivalent having a structure of the formula (1) is 150-220, the viscosity is 300-5,000cps Any one or a mixture of bisphenol-F can be used.
[화학식 1][Formula 1]
(상기 식에서 R은 수소 혹은 메틸기이다.)(Wherein R is hydrogen or a methyl group)
전체 조성물 중 상기 에폭시 수지의 함량은 10∼30중량%의 범위이다. 상기 함량이 상한치를 초과하는 경우 반응속도가 느려져 공정시간이 길어지는 문제점이 있고, 하한치 미만으로 사용되는 경우 본 발명에서 요구하는 물성을 얻을 수 없는 문제점이 있다.The content of the epoxy resin in the total composition is in the range of 10 to 30% by weight. If the content exceeds the upper limit, there is a problem that the reaction rate is slow and the process time is long, and when used below the lower limit, the physical properties required by the present invention cannot be obtained.
또한 상기 에폭시 수지에는 필요에 따라 물성 향상을 목적으로 나프탈렌계, 페놀노볼락계, 사이클로 알리파틱계, 아민계 다관능성 에폭시수지 등의 다른 액상 에폭시 수지가 혼합될 수 있다. 그러나 나프탈렌계 에폭시 수지나 페놀노볼락계 에폭시 수지 등과 혼합사용시에 점도가 많이 증가할 수 있으므로 본 발명의 목적에 맞도록 적절한 점도를 유지하는 범위 내에서 혼합하여 사용한다.In addition, other liquid epoxy resins, such as naphthalene-based, phenol novolac-based, cyclo aliphatic, and amine-based polyfunctional epoxy resins, may be mixed with the epoxy resin for the purpose of improving physical properties. However, since the viscosity may increase a lot when used in combination with a naphthalene epoxy resin or a phenol novolac epoxy resin, the mixture may be used within the range of maintaining an appropriate viscosity for the purpose of the present invention.
본 발명에서 경화제로는 그 당량이 210∼250이며, 하기 화학식 2로 표시되는 알킬화 테트라하이드로프탈산 무수물 또는 그 당량이 150∼170이며 하기 화학식 3으로 표시되는 메틸테트라하이드로프탈산 무수물을 혼합하여 사용한다.In the present invention, the curing agent is equivalent to 210 to 250, alkylated tetrahydrophthalic anhydride represented by the following formula (2) or methyltetrahydrophthalic anhydride represented by the following formula (3) is used by mixing the equivalent.
(상기 식에서 R1∼R3는 각각 독립적으로 탄소수 1∼4의 알킬 혹은 알케닐기이다.)(In the formula, R 1 to R 3 are each independently an alkyl or alkenyl group having 1 to 4 carbon atoms.)
상기 알킬화 테트라하이드로프탈산 무수물과 메틸테트라하이드로프탈산 무수물의 혼합중량비는 30:70∼70:30이다. 알킬화 테트라하이드로프탈산 무수물의 비가 30 중량% 미만인 경우 액상봉지재의 수분흡수율이 높고, 경화 수축율이 높아 신뢰성을 저하시키게 된다. 반면, 알킬화 테트라하이드로프탈산 무수물의 함량이 70 중량% 이상의 경우 알킬화 테트라하이드로프탈산 무수물 단독 사용시 수지 조성물의 점도가 증가하여 작업성이 현저히 저하될 수 있다.The mixing weight ratio of the said alkylated tetrahydrophthalic anhydride and methyltetrahydrophthalic anhydride is 30: 70-70: 30. When the ratio of the alkylated tetrahydrophthalic anhydride is less than 30% by weight, the water absorption rate of the liquid encapsulant is high, and the curing shrinkage rate is high, thereby reducing reliability. On the other hand, when the content of the alkylated tetrahydrophthalic anhydride is 70% by weight or more, when the alkylated tetrahydrophthalic anhydride is used alone, the viscosity of the resin composition may increase and workability may be significantly reduced.
전체 조성물 중 상기 경화제의 함량은 10∼30 중량%의 범위이다. 상기 함량이 상한치를 초과하는 경우 경화물 내에 미경화 잔류물이 형성되어 패키지의 신뢰성이 저하되는 문제점이 있고, 하한치 미만으로 사용되는 경우 경화속도가 느려지는 문제점이 발생할 수 있다.The content of the curing agent in the total composition is in the range of 10 to 30% by weight. If the content exceeds the upper limit, there is a problem that uncured residues are formed in the cured product to lower the reliability of the package, and when used below the lower limit, the curing rate may be lowered.
본 발명에서 경화촉매로서는 하기 화학식 4로 표시되는 이미다졸계 촉매를 사용할 수 있으며, 촉매 종류별로 같은 양을 사용할 경우 활성에 따라 겔화 시간에 차이는 발생하나 사용량의 증감을 통하여 겔화 시간을 조절할 수 있어 촉매의 종류에 대하여서는 국한되지 않는다.In the present invention, as a curing catalyst, an imidazole catalyst represented by the following Chemical Formula 4 may be used, and when the same amount is used for each type of catalyst, a difference in gelation time may occur depending on activity, but the gelation time may be controlled by increasing or decreasing the amount used. The type of catalyst is not limited.
[화학식 4][Formula 4]
(상기 식에서 R1∼R4는 각각 독립적으로 수소원자, 메틸기, 에틸기, 페닐기, 시아노에틸기, 벤질기 또는 수산기이다.)(In the formula, R 1 to R 4 are each independently a hydrogen atom, a methyl group, an ethyl group, a phenyl group, a cyanoethyl group, a benzyl group, or a hydroxyl group.)
전체 조성물 중 상기 경화촉매의 함량은 0.1∼5 중량%의 범위이다. 상기 함량이 상한치를 초과하는 경우 원하는 경화 특성을 얻을 수 없을 뿐만 아니라 수지 조성물의 보관 안정성이 나빠지는 문제점이 있고, 하한치 미만으로 사용되는 경우 경화속도가 느려져서 생산성이 감소하고, 미경화로 인한 원하는 물성을 얻을 수 없는 문제점이 발생할 수 있다.The content of the curing catalyst in the total composition is in the range of 0.1 to 5% by weight. If the content exceeds the upper limit, the desired curing properties may not be obtained, and the storage stability of the resin composition may be deteriorated. If the content is used below the lower limit, the curing rate is slowed, the productivity is decreased, and the desired physical properties due to uncuring. Problems may not arise.
또한 상기 경화촉매에는 필요에 따라 열가소성 수지로 캡슐화되어 상온 안정성을 증가시킨 경화 촉매 및 경화제로 개질된 경화 촉매를 사용할 수 있다.In addition, the curing catalyst may be a curing catalyst and a curing catalyst modified with a curing agent and encapsulated with a thermoplastic resin to increase the room temperature stability as needed.
본 발명에서 무기충전제로는 그 평균입자크기가 0.5∼20㎛인 용융실리카 또는 합성실리카를 사용하는 것이 바람직하며, 적용하고자 하는 간극의 크기 및 무기충전제의 함량에 따라 평균입자의 크기를 조정할 필요가 있다. 본 발명에서 무기충전 입자의 크기는 0.5∼10㎛, 바람직하게는 1∼5㎛인 것을 사용하며, 최대 입경이 80㎛ 미만인 것이 바람직하다. 전체 조성물 중 상기 충전제의 함량은 50∼80 중량%의 범위이다. 상기 함량이 50 중량% 미만인 경우 충분한 강도와 낮은 열팽창계수를 기대할 수 없으며 또한 수분의 침투가 용이하고, 경화 수축율이 커져 신뢰성 저하의 원인이 된다. 반면, 80 중량%를 초과하는 경우 수지와 경화제의 점도에 따라 그 정도는 다르나 유동특성이 저하됨에 의한 간극 충진 속도가 현저히 떨어짐으로서 작업성 또는 공정성 불량의 우려가 있다.In the present invention, as the inorganic filler, it is preferable to use molten silica or synthetic silica having an average particle size of 0.5 to 20 µm, and it is necessary to adjust the average particle size according to the size of the gap to be applied and the content of the inorganic filler. have. In the present invention, the size of the inorganic filler particles is 0.5 to 10㎛, preferably 1 to 5㎛, and the maximum particle size is preferably less than 80㎛. The content of the filler in the total composition is in the range of 50 to 80% by weight. When the content is less than 50% by weight, sufficient strength and low coefficient of thermal expansion cannot be expected, moisture infiltration is easy, and curing shrinkage rate increases, which causes a decrease in reliability. On the other hand, when the content exceeds 80% by weight, the degree of filling varies depending on the viscosity of the resin and the curing agent, but the gap filling speed is significantly lowered due to the deterioration of the flow characteristics.
위에 명시한 조성물의 성분 외에도 본 발명의 목적을 해치지 않는 범위 내에서 필요에 따라 기포의 제거를 용이하게 하기 위한 소포제, 제품 외관 등을 위한 카본블랙 등의 착색제, 기계적 물성 및 접착력을 증가시키기 위한 글리시독시프로 필 트리메톡시 실란 등의 실란 커플링제, 침투성 개선을 위한 표면장력 조절제, 요변성과 성형성을 개선하기 위한 퓸드(fumed) 실리카 등의 기타 첨가제가 추가로 사용될 수 있다.In addition to the components of the composition described above, antifoaming agents for facilitating the removal of bubbles as necessary without affecting the object of the present invention, colorants such as carbon black for product appearance, etc., glyces for increasing mechanical properties and adhesion. Other additives, such as silane coupling agents such as doxypropyl trimethoxy silane, surface tension modifiers for improving permeability, fumed silica for improving thixotropy and formability, and the like can be further used.
본 발명의 액상 에폭시 수지 조성물은, 예를 들면 에폭시 수지, 경화제, 경화촉진제, 무기충전제를 동시에 또는 원료별 순차적으로 투입하고 필요에 따라 가열처리를 하면서 교반, 혼합, 분산시킴으로써 제조할 수 있다. 이들 혼합물의 혼합, 교반, 분산 등의 장치는 특별히 한정되지 않지만, 교반, 가열장치를 구비한 혼합분쇄기, 3축 롤밀, 볼밀, 진공유발기, 유성형 혼합기 등을 사용할 수 있으며, 또한 이들 장치를 적절하게 조합하여 사용할 수도 있다. The liquid epoxy resin composition of the present invention can be prepared by, for example, adding an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler at the same time or sequentially for each raw material, and stirring, mixing, and dispersing while heating as necessary. The apparatus for mixing, stirring, and dispersing these mixtures is not particularly limited, but a mixer, a three-axis roll mill, a ball mill, a vacuum induction machine, a planetary mixer, and the like, which are equipped with a stirring and heating device, may be used. It can also be used in combination.
본 발명에서의 액상 에폭시 수지 조성물의 점도는 25℃에서 2,000∼40,000cps, 바람직하게는 3,000∼30,000cps 이하의 범위가 되는 것이 좋다. 언더필 공정시 단위 패키지간 또는 적층 패키지와 회로 기판간의 간극 크기에 따라 다르지만, 점도가 40,000cps 초과인 경우에는 간극 충진 시간이 너무 길고 디스펜싱 공정에서의 작업성 또한 불량해질 수 있다. The viscosity of the liquid epoxy resin composition in this invention should be 2,000-40,000cps in 25 degreeC, Preferably it is the range of 3,000-30,000cps or less. In the underfill process, depending on the gap size between the unit package or between the laminated package and the circuit board, if the viscosity is more than 40,000 cps, the gap filling time is too long and workability in the dispensing process may also be poor.
성형공정은 통상의 디스펜싱 공정을 사용할 수 있으며, 경화는 150℃에서 1시간 이상 오븐에서 경화하는 것이 바람직하다. 경우에 따라 경화 촉매의 조절을 통하여 경화 온도를 변화할 수 있으며, 경화 시간을 단축할 수 있다.The molding process may use a conventional dispensing process, the curing is preferably cured in an oven at 150 ℃ for 1 hour or more. In some cases, the curing temperature may be changed by adjusting the curing catalyst, and the curing time may be shortened.
본 발명의 액상에폭시 수지 조성물을 이용하여 반도체 적층 패키지를 제공할 수 있다.The semiconductor laminated package can be provided using the liquid epoxy resin composition of this invention.
이하에서, 실시예를 통하여 본 발명을 보다 상세하게 설명하고자 하나, 하기의 실시예는 설명의 목적을 위한 것으로 본 발명을 제한하고자 하는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the following Examples are for the purpose of explanation and are not intended to limit the present invention.
[실시예 1 및 2, 비교예 1 내지 3][Examples 1 and 2, Comparative Examples 1 to 3]
표 1에 나타난 배합비대로 원료를 세라믹 재질의 교반기와 쓰리 롤밀을 이용하여 교반 및 분산, 혼합하여 에폭시 수지 조성물을 제조하였다. 제조된 에폭시 수지 조성물을 사용하여 테플론 금형에서 150℃에서 한시간 경화시킴으로써 W×T×L이 4mm×10mm×80mm인 시편을 제조하여 유리전이온도, 굴곡강도, 열팽창계수 등의 물성을 측정하고, 그 결과를 표 1에 나타내었다. 작업성과 신뢰성 테스트의 경우 W×L이 11mm×21mm인 단위 패키지가 2개 적층된 적층 패키지를 인쇄회로 기판에 실장한 기재에 언더필한 후 150℃에서 한시간 경화시킴으로써 시편을 제조하여 테스트하였다.The epoxy resin composition was prepared by stirring, dispersing, and mixing the raw materials with the mixing ratio shown in Table 1 using a ceramic stirrer and a three roll mill. By using the prepared epoxy resin composition, the specimen was cured at 150 ° C. for 1 hour at 150 ° C. to prepare a specimen having a W × T × L of 4 mm × 10 mm × 80 mm, and measured physical properties such as glass transition temperature, bending strength, and coefficient of thermal expansion. The results are shown in Table 1. In the case of workability and reliability test, a specimen was prepared by underfilling a laminated package having two unit packages having a W × L of 11 mm × 21 mm on a substrate mounted on a printed circuit board and curing at 150 ° C. for one hour.
1) DIC社 : EXA-835LV1) DIC Corporation: EXA-835LV
2) DIC社 : YH-3062) DIC Corporation: YH-306
3) DIC社 : B-5703) DIC: B-570
[물성평가방법][Property evaluation method]
1) 점도1) viscosity
Cone & Plate 형 브룩필드(Brookfield) 점도계를 사용하여 25℃에서 측정.Measured at 25 ° C. using a Brookfield viscometer with Cone & Plate type.
2)유리전이온도2) glass transition temperature
DMTA(Dynamic Mechanical Thermal Analyser)로 평가 (승온속도 5℃/min, 1Hz).Evaluated by DMTA (Dynamic Mechanical Thermal Analyser) (raising rate 5 ℃ / min, 1Hz).
3) 열팽창계수3) coefficient of thermal expansion
TMA(Thermomechanical Analyser)로 평가 (승온속도 10℃/min).Evaluation by TMA (Thermomechanical Analyser) (raising rate 10 ℃ / min).
4) 굴곡강도4) Flexural Strength
UTM(Universal Test Machine)을 이용하여 ASTM D190에 의거 평가.Assessed according to ASTM D190 using UTM (Universal Test Machine).
5) 경화 수축율5) Curing Shrinkage
경화 전후의 무게 감소율 측정.Determination of weight loss rate before and after curing.
6) 간극충진성 6) gap filling
W×L이 11mm×21mm인 단위 패키지가 2개 적층된 적층 패키지를 인쇄회로 기판에 실장한다. 이때 간극은 단위 패키지간 200㎛, 적층 패키지와 인쇄회로 기판간 250㎛가 되도록 한 후 적층 패키지 한쪽 가장자리에 70℃에서 언더필재를 도포하여 5분간 주입기를 둔 후 150℃에서 60분 경화시킨 패키지를 C-SAM을 활용하여 패키지 내부의 충진성을 확인. A laminated package in which two unit packages having a W × L of 11 mm × 21 mm are stacked is mounted on a printed circuit board. At this time, the gap is 200㎛ between the unit package, 250㎛ between the laminated package and the printed circuit board, and then the underfill material is applied at one edge of the laminated package at 70 ° C. for 5 minutes, and then the package cured at 150 ° C. for 60 minutes. Utilize C-SAM to check the filling inside the package.
7) 열충격 시험(Temperature Cycle Test)7) Temperature Cycle Test
JEDEC, JESD22-A104 시험조건 G(-40℃/+125℃)으로 평가한 후 C-SAM을 활용하여 박리발생여부 확인함.JEDEC, JESD22-A104 Test Condition G (-40 ℃ / + 125 ℃), and then using C-SAM to check for peeling.
표 1의 물성 및 신뢰성 평가결과에서 볼 수 있듯이 신뢰도 측정 구간 이상의 유리 전이 온도를 가지며, 열팽창 계수가 40㎛/m.℃ 이하를 만족하며, 경화 수축율이 1.0중량% 이하를 나타내는 경우 신뢰성이 양호하게 나타났다.As can be seen from the physical property and reliability evaluation results of Table 1, when the glass transition temperature is higher than the reliability measurement interval, the thermal expansion coefficient satisfies 40 µm / m. appear.
이를 만족하기 위하여 무기 충지제의 함량을 50 중량% 이상 사용하여야 하나, 80 중량% 이상을 사용할 경우 봉지재의 점도가 증가되어 작업성이 현저히 떨어져 불량을 야기한다. In order to satisfy this, the content of the inorganic filler should be used more than 50% by weight, but when more than 80% by weight is used, the viscosity of the encapsulant is increased and workability is significantly lowered, causing a defect.
메틸테트라하이드로프탈산 무수물의 경우 저점도 및 높은 유리 전이 온도를 나타내는 장점이 있으나, 경화 수축율이 크고, 충격 강도에 약한 단점이 있다. 이를 극복하기 위하여 알킬화 테트라하이드로프탈산 무수물의 혼합 및 단독 사용하여 신뢰도를 증가시켰다. Methyltetrahydrophthalic anhydride has the advantage of showing low viscosity and high glass transition temperature, but has a disadvantage in that the cure shrinkage is large and the impact strength is weak. To overcome this, the reliability was increased by mixing and using alkylated tetrahydrophthalic anhydride alone.
한편, 비교예 1에서 무기물의 충진율이 50 중량% 미만일 경우 솔더 범프와의 열팽창 계수가 차이가 커지고 열 응력이 커져 솔더 범프의 계면에서 파괴가 발생하여 신뢰성 불량을 야기하였다.On the other hand, in Comparative Example 1, when the filling rate of the inorganic material is less than 50% by weight, the thermal expansion coefficient with the solder bumps is increased and the thermal stress is increased, which causes breakage at the interface of the solder bumps, causing a poor reliability.
비교예 2에서 메틸테트라하이드로프탈산 무수물 단독으로 사용한 경우 경화 수축율의 증가로 인하여 신뢰성 불량을 야기하였다.In the case of using methyltetrahydrophthalic anhydride alone in Comparative Example 2 caused poor reliability due to the increase in the curing shrinkage.
비교예 3에서 무기 충진제의 함량이 80 중량%를 초과할 경우 점도가 너무 높아져 간극 충진 속도가 현저히 감소하여 언더필 재료로서의 기능을 발휘하지 못하였다. In Comparative Example 3, when the content of the inorganic filler exceeds 80% by weight, the viscosity became too high, and the gap filling speed was significantly reduced, thereby failing to function as an underfill material.
알킬화 테트라하이드로프탈산 무수물의무기물 충진량이 60wt% 이상 시 탄성률의 증가로 인하여 재작업이 어려워지며, 열적, 기계적 신뢰성 평가진행 시 발생하는 응력을 줄여 주지 못하여 칩의 파괴가 발생하였다.When the inorganic filler content of alkylated tetrahydrophthalic anhydride is more than 60wt%, reworking becomes difficult due to the increase of elastic modulus, and the chip breakage occurs because the stress generated during thermal and mechanical reliability evaluation cannot be reduced.
상기 언급한 바와 같은 본 발명에 따른 반도체 적층 패키지 언더필용 액상 에폭시 수지 조성물에 의하면, 낮은 점도로 공정성이 우수할 뿐 아니라, 경화 후 충분히 낮은 열팽창 계수 및 낮은 경화 수축율을 가짐으로써 향상된 내열충격성 및 내충격성을 나타내어 적층 패키지에 적용 시 점도조절에 의해 작업성이 우수하고, 경화 후 낮은 열챙창 계수 및 경화 수축율에 의한 높은 내열충격성, 내충격성을 나타내어 신뢰도 특성이 높은 특징이 있다.According to the liquid epoxy resin composition for semiconductor laminate package underfill according to the present invention as mentioned above, not only has excellent processability at low viscosity, but also has a sufficiently low thermal expansion coefficient and low curing shrinkage after curing, thereby improving thermal shock resistance and impact resistance. When applied to a laminated package, it is excellent in workability by viscosity control, and exhibits high thermal shock resistance and impact resistance due to low thermal window coefficient and curing shrinkage ratio after curing, and has high reliability characteristics.
비록 본 발명이 상기 언급된 바람직한 실시예와 관련하여 설명되어졌지만, 발명의 요지와 범위로부터 벗어남이 없이 다양한 수정이나 변형을 하는 것이 가능하다. 따라서 특허청구범위는 본 발명의 요지에 속하는 이러한 수정이나 변형을 포함한다.Although the present invention has been described in connection with the above-mentioned preferred embodiments, it is possible to make various modifications or variations without departing from the spirit and scope of the invention. Thus, the claims include any such modifications or variations that fall within the spirit of the invention.
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KR20030057130A (en) * | 2001-12-28 | 2003-07-04 | 제일모직주식회사 | Liquid Epoxy Resin Composition for Underfilling Semiconductor Device |
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