KR100671136B1 - Reworkable liquid epoxy resin composition for underfill application and a semiconductor element thereof - Google Patents
Reworkable liquid epoxy resin composition for underfill application and a semiconductor element thereof Download PDFInfo
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- KR100671136B1 KR100671136B1 KR1020040116621A KR20040116621A KR100671136B1 KR 100671136 B1 KR100671136 B1 KR 100671136B1 KR 1020040116621 A KR1020040116621 A KR 1020040116621A KR 20040116621 A KR20040116621 A KR 20040116621A KR 100671136 B1 KR100671136 B1 KR 100671136B1
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- epoxy resin
- resin composition
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- liquid epoxy
- underfill
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- 239000000203 mixture Substances 0.000 title claims abstract description 43
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000003822 epoxy resin Substances 0.000 claims abstract description 35
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 35
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 16
- 239000003054 catalyst Substances 0.000 claims abstract description 14
- 239000011256 inorganic filler Substances 0.000 claims abstract description 14
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 14
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920003986 novolac Polymers 0.000 claims abstract description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000004593 Epoxy Substances 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 8
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 6
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 claims description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000002947 alkylene group Chemical group 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 2
- 229940106691 bisphenol a Drugs 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000011049 filling Methods 0.000 abstract description 8
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 230000035882 stress Effects 0.000 abstract description 6
- 229930185605 Bisphenol Natural products 0.000 abstract description 2
- 230000003139 buffering effect Effects 0.000 abstract description 2
- 239000007791 liquid phase Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 15
- 229910000679 solder Inorganic materials 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 230000035939 shock Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 230000000704 physical effect Effects 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 5
- 238000002156 mixing Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 150000008065 acid anhydrides Chemical class 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/15—Heterocyclic compounds having oxygen in the ring
- C08K5/151—Heterocyclic compounds having oxygen in the ring having one oxygen atom in the ring
- C08K5/1515—Three-membered rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/226—Mixtures of di-epoxy compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/04—Epoxynovolacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/02—Flame or fire retardant/resistant
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
본 발명은 재작업이 가능한 고신뢰성 반도체 소자 언더필용 액상 에폭시 수지 조성물에 대한 것으로, 보다 상세하게는 저점도 액상 에폭시수지를 사용하여 우수한 유동성에 의한 양호한 간극 충진성을 가지며, 저응력화를 위한 액상 페놀노볼락 경화제의 사용으로 조성물의 열응력 완충 성능을 개선하고, 무기 충진재를 사용함으로서, 패키지의 신뢰성을 향상시키고. 선형 에폭시 수지를 이용하여 고온에서의 저응력화를 달성하여 재작업이 가능한 반도체 언더필용 액상 에폭시 수지 조성물에 관한 것으로, 에폭시 수지 10∼45중량%, 선형 에폭시 수지 5~20중량%, 경화제 10∼45중량%, 경화촉매 1∼5중량%, 및 무기충진재 20∼60중량%를 포함하며, 점도가 2,000∼50,000 cps인 것을 특징으로 한다.The present invention relates to a liquid epoxy resin composition for underfilling a highly reliable semiconductor device underfill, and more particularly, using a low viscosity liquid epoxy resin, having a good gap filling property due to excellent fluidity, and a liquid phase for low stress. The use of a phenol novolac curing agent improves the thermal stress buffering performance of the composition, and the use of inorganic fillers to improve the reliability of the package. The present invention relates to a liquid epoxy resin composition for semiconductor underfill that can be reworked by achieving low stress at high temperature by using a linear epoxy resin, wherein the epoxy resin 10 to 45% by weight, the linear epoxy resin 5 to 20% by weight, and the curing agent 10 to 45 wt%, 1 to 5 wt% of a curing catalyst, and 20 to 60 wt% of an inorganic filler, and the viscosity is 2,000 to 50,000 cps.
재작업, 액상 에폭시, 저점도, 언더필, 저응력화, 비스페놀, 페놀노볼락, 선형에폭시, 무기충진재 Rework, liquid epoxy, low viscosity, underfill, low stress, bisphenol, phenol novolac, linear epoxy, inorganic filler
Description
본 발명은 재작업이 가능한 고신뢰성 반도체 소자 언더필용 액상 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 금속 볼 및 랜드를 이용하여 반도체 칩 또는 반도체 패키지가 회로 기판에 전기적으로 접속되는 부위에 열적, 기계적 신뢰도를 향상 시키기 위하여 언더필재로 사용되는 재작업 가능한 고신뢰성 액상 에폭시 수지 조성물에 관한 것이다. The present invention relates to a liquid epoxy resin composition for a highly reliable semiconductor device underfill that can be reworked, and more particularly, thermally, mechanically, to a portion where a semiconductor chip or a semiconductor package is electrically connected to a circuit board using metal balls and lands. It relates to a reworkable highly reliable liquid epoxy resin composition used as an underfill material to improve reliability.
전자제품의 소형화, 경박화, 다기능화, 대용량화에 따라 반도체 소자의 봉지 및 실장방법 등도 다변화되는 추세이다. 특히 멀티 칩 모듈(MCM)과 같이 단일 모듈 내에 수 개에서 수십 개의 칩이 실장되는 전자 부품의 경우 칩 스케일 패키지(CSP) 등의 패키지 형태 및 웨이퍼 레벨 패키지(WLP), 플립칩(FC) 등의 베어칩 형태의 전자 소자를 사용하여 경박단소화, 다기능화 및 대용량화가 가속 되고 있다. As electronic products become smaller, thinner, more versatile, and larger in capacities, semiconductor device encapsulation and mounting methods are also diversifying. Especially for electronic components such as multi-chip modules (MCMs) in which several to several dozen chips are mounted in a single module, package types such as chip scale packages (CSP) and wafer level packages (WLP) and flip chips (FC) The use of bare chip-type electronic devices is accelerating light and small, multifunctional and large capacity.
그러나 상기의 전자 소자들은 회로 기판 사이의 전도체와 솔더 볼 등의 땜납 접속을 통하여 전기적으로 연결되며, 이러한 방식으로 실장된 전자 소자를 열충격 시험을 할 경우 회로기판과 솔더 볼 간 연결상태 등에 대한 신뢰성 불량의 여지가 있다. 그 이유로 전자 소자와 회로 기판과 솔더 볼의 상이한 열팽창계수가 열적 스트레스를 유발하기 때문이다. However, the above electronic devices are electrically connected through the solder connection between the conductors and the solder balls between the circuit boards, and when the thermal shock test is performed on the electronic devices mounted in this manner, the reliability of the connection state between the circuit board and the solder balls is poor. There is room. This is because different thermal expansion coefficients of electronic devices, circuit boards, and solder balls cause thermal stress.
특히, WLP의 경우 반도체 칩 자체가 패키지로 사용되어 기존의 패키지에 비하여 외부적인 기계적, 열적 충격 요인에 취약하게 된다. 그 이유로 칩의 기계적 강도가 패키지에 비하여 매우 약하며, 칩과 배선 기판과 솔더 볼의 상이한 열팽창계수가 열적 스트레스를 유발하기 때문이다. 이러한 열적, 기계적 충격에 의한 응력을 완화하기 위하여 칩을 기판에 장착한 후 소자와 기판 사이의 공간을 수지로 충진하는 공정이 언더필 공정이며 이에 사용되는 소재가 주로 액상인 언더필재이다. In particular, in the case of WLP, the semiconductor chip itself is used as a package, which makes it more vulnerable to external mechanical and thermal shock factors than conventional packages. This is because the mechanical strength of the chip is very weak compared to the package, and the different coefficients of thermal expansion of the chip, the wiring board and the solder balls cause thermal stress. In order to alleviate the stress caused by thermal and mechanical shock, the process of filling the space between the device and the substrate with a resin after mounting the chip on the substrate is an underfill process, and the material used therein is mainly an underfill material.
그러나, 이러한 언더필재를 사용할 경우 회로 기판에 전자 소자를 장착한 후에 불량이 발견된 때에 그 전체 구조를 파괴하거나 또는 긁어 내지 않고 전자 소자를 교체하는 것은 매우 곤란한 문제이다. 특히 MCM의 경우 수개의 칩 또는 패키지에 불량이 발생하였을 경우 불량 소자만을 재작업하지 않는다면 고가의 양품 칩 또는 패키지를 손실을 입게 된다.However, in the case of using such an underfill material, it is very difficult to replace the electronic device without destroying or scraping the entire structure when a defect is found after mounting the electronic device on the circuit board. In particular, in case of a failure of several chips or packages, MCM loses expensive good chips or packages unless rework is performed on only the defective devices.
최근 이러한 문제점을 해결하기 위하여 재작업이 가능한 액상 언더필 재료에 대한 연구가 진행되고 있다. 그러나, 용매를 사용하여 수지를 팽윤기켜 재작업이 이루어 지는 언더필 재료(일본특허공개 제69280/94호)의 경우 수지의 팽윤에 걸리 는 시간이 길고, 회로기판의 신뢰도를 감소시키는 단점이 있으며, 열분해성 수지를 사용하여 재작업이 이루어 지는 언더필 재료(한국특허공개 2002-0087442)의 경우 밀집된 전자 소자의 재작업시 재작업하지 말아야 할 전자 소자의 언더필 재료의 열분해를 유발하여 불량을 유발시키며, 분해 잔량에 의한 회로기판 내 전기 접속부의 오염을 유발하여 재작업시 접속 불량을 유발할 수 있다. 열가소성 수지를 이용한 언더필 재료(미국특허 제5,783,867호)의 경우 상대적으로 적당한 온도 조건하에서 누출되는 경향이 있다.Recently, research on liquid underfill materials that can be reworked has been conducted to solve these problems. However, the underfill material (Japanese Patent Laid-Open No. 69280/94), in which the resin is swelled by using a solvent and is reworked, has a long time for swelling of the resin and reduces the reliability of the circuit board. In the case of the underfill material (Korea Patent Publication No. 2002-0087442) that is reworked using a thermally decomposable resin, it causes a defect by causing thermal decomposition of the underfill material of the electronic device that should not be reworked when reworking a dense electronic device. It may cause contamination of the electrical connection part in the circuit board due to the residual amount of decomposition, which may cause connection failure when reworking. Underfill materials using thermoplastics (US Pat. No. 5,783,867) tend to leak under relatively moderate temperature conditions.
또한, 기판과의 우수한 접착력 및 양호한 간극침투성을 달성하기 위하여 에폭시 조성물의 경화제로서 산무수물이 쓰이는 경우가 많다. 그러나, 산무수물의 적용시에는 흡습율이 증가하고, 조성물의 내열충격성이 열화되며, 높은 탄성률로 인하여 열적, 기계적 충격에 약하며, 재작업이 어려워지는 등의 단점이 있다.In addition, acid anhydrides are often used as a curing agent for epoxy compositions in order to achieve excellent adhesion to the substrate and good gap penetration. However, when the acid anhydride is applied, the moisture absorption rate increases, the thermal shock resistance of the composition is deteriorated, and the high elastic modulus is vulnerable to thermal and mechanical shocks, making rework difficult.
최근, BGA등의 패키지와 회로 기판 사이에 재작업이 가능한 언더필 소재가 소개되고 있으나, 플립 칩(FC), WLP등과 같이 칩 형태의 패키지의 경우 기존의 언더필 소재에 비하여 고신뢰성이 요구된다. 그러나, 이러한 고신뢰성을 달성하기 위하여 무기 충지재를 사용한 경우 재작업이 어려운 문제가 발생한다. Recently, an underfill material that can be reworked between a package such as a BGA and a circuit board has been introduced, but a chip type package such as flip chip (FC), WLP, etc., requires higher reliability than an existing underfill material. However, when the inorganic filler is used to achieve such high reliability, a problem arises in that reworking is difficult.
이러한 측면을 고려해 볼 때 재작업이 가능한 언더필 재료는 솔더 볼등의 접합부를 재작업하는 온도 내에서 회로 기판과의 분리가 쉬워야 하며, 오염 및 잔량이 남지 않아야 하며, 재작업 온도 이하에서는 안정적인 경화 상태를 유지하여야 한다. 또한, 작업성 측면에서 통상적으로 25 ~ 600μm 이내의 전자 소자와 회로 기판간 간극에 대한 빠른 침투에 의한 충진성을 확보하기 위하여 낮은 점도 및 고유 동성을 달성하여야 하고, 신뢰성과 관련하여서는 솔더 볼과 크게 차이가 나지 않도록 열팽창계수를 저하시키거나, 열응력을 완충시키고, 기계적 충격을 흡수할 수 있도록 충분이 낮은 탄성률을 유지하여야 하며, 칩과 기판 계면에 밀착성, 즉 접착성이 좋아야 한다,Considering this aspect, the refillable underfill material should be easy to be separated from the circuit board within the temperature of reworking solder joints such as solder balls, free from contamination and residues, and stable under the rework temperature. Must be maintained. In addition, in terms of workability, low viscosity and high dynamics must be achieved in order to ensure filling by rapid penetration into the gap between the electronic device and the circuit board within 25 to 600 μm. The elastic modulus must be kept low enough to reduce the coefficient of thermal expansion, buffer the thermal stress, and absorb mechanical shocks so as not to make a difference, and have good adhesion, that is, adhesion to the interface between the chip and the substrate.
본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 본 발명의 목적은, 저점도 액상 에폭시수지를 사용하여 우수한 유동성에 의한 양호한 간극 충진성을 가지며, 선형 에폭시 수지를 사용하여 경화물의 충분히 낮은 탄성률을 달성하여 고온에서의 재작업성을 달성하고, 저응력화를 위한 액상 페놀노볼락 경화제의 사용으로 조성물의 열응력 완충 성능을 개선함과 동시에 재작업성을 달성하고,무기 충진재를 사용하여, 적절한 기계적 강도 및 낮은 열팽창계수, 낮은 흡수율을 달성하여, 패키지의 신뢰성을 향상시킬 수 있는 반도체 언더필용 액상 에폭시 수지 조성물을 제공하는 것이다.The present invention is to solve the problems of the prior art as described above, an object of the present invention is to have a good gap fillability by excellent fluidity using a low viscosity liquid epoxy resin, and to sufficiently cure the cured product using a linear epoxy resin Reworkability at high temperatures is achieved by achieving low modulus of elasticity, and the use of liquid phenol novolac curing agents for low stress improves the thermal stress buffering performance of the composition and at the same time achieves reworkability and uses inorganic fillers. Accordingly, to provide a liquid epoxy resin composition for a semiconductor underfill that can achieve a suitable mechanical strength, low coefficient of thermal expansion, low absorption rate, and improve the reliability of the package.
상기와 같은 본 발명의 목적은, 에폭시 수지 10∼45중량%, 선형 에폭시 수지 5~20중량%, 경화제 10∼45중량%, 경화촉매 1∼5중량%, 및 무기충진재 20∼60중량%를 포함하며, 점도가 2,000∼50,000 cps인 것을 특징으로 하는 반도체 언더필용 액상 에폭시 수지 조성물에 의하여 달성된다.The object of the present invention as described above is 10 to 45% by weight of epoxy resin, 5 to 20% by weight of linear epoxy resin, 10 to 45% by weight of curing agent, 1 to 5% by weight of curing catalyst, and 20 to 60% by weight of inorganic filler. It is achieved by the liquid epoxy resin composition for semiconductor underfills, Comprising: It is a viscosity of 2,000-50,000 cps.
본 발명의 다른 측면은 상기 재작업 가능한 고신뢰성 액상 에폭시 수지 조성물로 봉지된 반도체 소자에 관한 것이다. Another aspect of the invention relates to a semiconductor device encapsulated with the reworkable highly reliable liquid epoxy resin composition.
본 발명의 그 밖의 목적, 특정한 장점 및 신규한 특징들은 이하의 발명의 상세한 설명과 바람직한 실시예로부터 더욱 분명해질 것이다.
Other objects, specific advantages and novel features of the present invention will become more apparent from the following detailed description of the invention and the preferred embodiments.
이하에서 본 발명에 따른 재작업이 가능한 반도체 소자 언더필용 액상 에폭시 수지 조성물의 구성에 대하여 설명하기로 한다.Hereinafter, the configuration of a liquid epoxy resin composition for a semiconductor device underfill according to the present invention can be described.
본 발명에서 사용된 에폭시 수지는 하기 [화학식 1]의 구조를 갖는 비스페놀계 에폭시 수지로서, 에폭시 당량이 150~220이고, 점도는 300~5,000 cps인 비스페놀-A, 비스페놀-F, 수소화 비스페놀-A, 수소화 비스페놀-F 등을 각각 단독으로 혹은 2종 이상 혼합하여 사용할 수 있다.The epoxy resin used in the present invention is a bisphenol-based epoxy resin having a structure of the following [Formula 1], the epoxy equivalent of 150 ~ 220, the viscosity of 300 ~ 5,000 cps Bisphenol-A, bisphenol-F, hydrogenated bisphenol-A And hydrogenated bisphenol-F may be used alone or in combination of two or more thereof.
[화학식 1][Formula 1]
(상기 식에서 R은 수소 혹은 메틸기이다.)(Wherein R is hydrogen or a methyl group)
전체 조성물 중 상기 에폭시 수지의 함량은 10∼45중량%의 범위이다. 상기 함량이 상한치를 초과하는 경우 반응속도가 느려져 공정시간이 길어지는 문제점이 있고, 하한치 미만으로 사용되는 경우 본 발명에서 요구하는 물성을 얻을 수 없는 문제점이 있다.The content of the epoxy resin in the total composition is in the range of 10 to 45% by weight. If the content exceeds the upper limit, there is a problem that the reaction rate is slow and the process time is long, and when used below the lower limit, the physical properties required by the present invention cannot be obtained.
또한 상기 에폭시 수지에는 필요에 따라 물성 향상을 목적으로 나프탈렌계, 페놀노볼락계, 사이클로 알리파틱계, 아민계 다관능성 에폭시수지 등의 다른 액상 에폭시 수지가 혼합될 수 있다. 그러나 나프탈렌계 에폭시 수지나 페놀노볼락계 에폭시 수지 등과 혼합사용시에 점도가 많이 증가할 수 있으므로 본 발명의 목적에 맞도록 적절한 점도를 유지하는 범위 내에서 혼합하여 사용한다.In addition, other liquid epoxy resins, such as naphthalene-based, phenol novolac-based, cyclo aliphatic, and amine-based polyfunctional epoxy resins, may be mixed with the epoxy resin for the purpose of improving physical properties. However, since the viscosity may increase a lot when used in combination with a naphthalene epoxy resin or a phenol novolac epoxy resin, the mixture may be used within the range of maintaining an appropriate viscosity for the purpose of the present invention.
본 발명에서 사용된 선형 에폭시 수지는 하기 [화학식 2] 또는 [화학식 3]의 구조를 갖는 폴리프로필렌 글라이콜 또는 폴리에틸렌 글라이콜 또는 폴리에틸렌디올 디글리시딜 에테르 등의 에폭시 수지로서, 각각 단독으로 혹은 2종 이상 혼합하여 사용할 수 있다.The linear epoxy resin used in the present invention is an epoxy resin such as polypropylene glycol or polyethylene glycol or polyethylenediol diglycidyl ether having a structure of the following [Formula 2] or [Formula 3], each alone Or it can mix and use 2 or more types.
[화학식 2][Formula 2]
(상기 식에서 R은 수소 혹은 메틸기이고, n은 5~15의 정수 이다.)(Wherein R is hydrogen or a methyl group and n is an integer from 5 to 15)
[화학식 3][Formula 3]
(상기 식에서 R은 탄소수 5∼15의 알킬렌기이다.)(Wherein R is an alkylene group having 5 to 15 carbon atoms)
전체 조성물 중 상기 선형 에폭시 수지의 함량은 5∼20중량%의 범위이다. 상기 함량이 상한치를 초과하는 경우 경화반응속도가 느려져 공정시간이 길어지는 문제점 및 기계적 강도가 저하되는 문제점이 있고, 하한치 미만으로 사용되는 경우 본 발명에서 요구하는 재작업 및 탄성율 등의 물성을 얻을 수 없는 문제점이 있다.The content of the linear epoxy resin in the total composition is in the range of 5 to 20% by weight. If the content exceeds the upper limit, there is a problem that the curing reaction rate is slow and the process time is long and the mechanical strength is lowered. When the content is used below the lower limit, physical properties such as rework and modulus required by the present invention can be obtained. There is no problem.
또한 상기 에폭시 수지에는 필요에 따라 단관능성 및 다관능성 에폭시 수지를 사용할 수 있다. Moreover, monofunctional and polyfunctional epoxy resin can be used for the said epoxy resin as needed.
본 발명에서 경화제로는 하기 [화학식 4]로 표시되는 알킬화 페놀노볼락 수지로서, OH 당량이 120∼150인 고순도의 페놀노볼락을 사용한다. As the curing agent in the present invention, as the alkylated phenol novolak resin represented by the following [Formula 4], a high-purity phenol novolak having an OH equivalent of 120 to 150 is used.
[화학식 4][Formula 4]
(상기 식에서 R1∼R5는 각각 독립적으로 수소원자 혹은 탄소수 1∼3의 알킬기 또는 알릴기이고, n은 0∼3의 정수이다.)(In the formula, R 1 to R 5 are each independently a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or an allyl group, and n is an integer of 0 to 3).
조성물의 점도, 경화물의 유리전이온도, 기계적 물성, 열특성 등의 조정을 위하여 n값 및 R1∼R5의 종류가 다른 제품 및 이미드 변성 등에 의해 유리전이온도 특성 등을 변화시킨 제품 등을 사용할 수 있다.In order to adjust the viscosity of the composition, the glass transition temperature of the cured product, the mechanical properties, and the thermal properties, products having different n-values and types of R1 to R5, and products having changed glass transition temperature characteristics due to imide modification can be used. have.
전체 조성물 중 상기 경화제의 함량은 10∼45중량%의 범위이다. 상기 함량이 상한치를 초과하는 경우 경화물 내에 미경화 잔류물이 형성되어 패키지의 신뢰성이 저하되는 문제점이 있고, 하한치 미만으로 사용되는 경우 경화속도가 느려지는 문제점이 있다.The content of the curing agent in the total composition is in the range of 10 to 45% by weight. When the content exceeds the upper limit, there is a problem in that uncured residue is formed in the cured product to lower the reliability of the package, and when used below the lower limit, the curing rate is lowered.
본 발명에서 경화촉매로서는 하기 [화학식 5]으로 표시되는 이미다졸계 촉매를 사용할 수 있으며, 촉매 종류별로 같은량을 사용할 경우 활성에 따라 겔화시간에 차이는 발생하나 사용량의 증감을 통하여 겔화시간을 조절할 수 있어 촉매의 종류에 대하여서는 국한되지 않는다.In the present invention, as the curing catalyst, the imidazole-based catalyst represented by the following [Formula 5] can be used, and when the same amount is used for each type of catalyst, a difference occurs in the gelation time depending on the activity, but the gelation time is controlled by increasing or decreasing the amount used The type of catalyst is not limited.
[화학식 5][Formula 5]
(상기 식에서 R1∼R4는 각각 독립적으로 수소원자, 메틸기, 에틸기, 페닐기, 시아노에틸기, 벤질기 또는 수산기이다.)(In the formula, R 1 to R 4 are each independently a hydrogen atom, a methyl group, an ethyl group, a phenyl group, a cyanoethyl group, a benzyl group, or a hydroxyl group.)
전체 조성물 중 상기 경화촉매의 함량은 1~5 중량%의 범위이다. 상기 함량이 상한치를 초과하는 경우 원하는 경화 특성을 얻을 수 없을 뿐만 아니라 수지 조성물의 보관 안정성이 나빠지는 문제점이 있고, 하한치 미만으로 사용되는 경우 경화속도가 느려져서 생산성이 감소하고, 미경화로 인한 원하는 물성을 얻을 수 없는 문제점이 있다.The content of the curing catalyst in the total composition is in the range of 1 to 5% by weight. If the content exceeds the upper limit, the desired curing properties may not be obtained, and the storage stability of the resin composition may be deteriorated. If the content is used below the lower limit, the curing rate is slowed, the productivity is decreased, and the desired physical properties due to uncuring. There is a problem that cannot be obtained.
또한 상기 경화촉매에는 필요에 따라 열가소성 수지로 캡슐화되어 상온 안정 성을 증가 시킨 경화 촉매 및 경화제로 개질된 경화 촉매를 사용할 수 있다.In addition, the curing catalyst may be a curing catalyst and a curing catalyst modified with a curing agent and encapsulated with a thermoplastic resin to increase the room temperature stability as needed.
본 발명에서 무기충진재로는 그 평균입자크기가 0.5∼20㎛인 용융 또는 합성실리카를 사용하는 것이 바람직하며, 적용하고자 하는 간극의 크기 및 무기충진재의 함량에 따라 평균입자의 크기를 조정할 필요가 있다. 본 발명에서 무기충전 입자의 크기는 0.5~ 10㎛, 바람직하게는 1~5㎛인 것을 사용하며, 전체 조성물 중 상기 충진재의 함량은 20∼60중량%의 범위이다. 상기 함량이 20중량% 미만인 경우 충분한 강도와 낮은 열팽창계수를 기대할 수 없으며 또한 수분의 침투가 용이해져 신뢰성 저하의 원인이 된다. 반면, 60중량%를 초과하는 경우 수지와 경화제의 점도에 따라 그 정도는 다르나 유동특성이 저하됨에 의한 간극충진속도가 현저히 떨어짐으로서 작업성 또는 공정성 불량의 우려가 있으며, 높은 탄성률로 인하여 재작업이 저하된다. 또한 높은 탄성률로 인하여 칩 패키지의 파괴를 야기한다. In the present invention, as the inorganic filler, it is preferable to use molten or synthetic silica having an average particle size of 0.5 to 20 µm, and it is necessary to adjust the average particle size according to the size of the gap to be applied and the content of the inorganic filler. . In the present invention, the size of the inorganic filler is 0.5 ~ 10㎛, preferably 1 to 5㎛ used, the content of the filler in the total composition is in the range of 20 to 60% by weight. If the content is less than 20% by weight, sufficient strength and low coefficient of thermal expansion can not be expected, and the penetration of moisture becomes easy, causing a decrease in reliability. On the other hand, when the content exceeds 60% by weight, the gap varies depending on the viscosity of the resin and the curing agent, but the gap filling speed is considerably lowered due to the deterioration of the flow characteristics, resulting in poor workability or poor workability. Degrades. In addition, high elastic modulus causes breakage of the chip package.
위에 명시한 조성물의 성분 외에도 본 발명의 목적을 해치지 않는 범위 내에서 필요에 따라 기포의 제거를 용이하게 하기 위한 소포제, 제품 외관 등을 위한 카본블랙 등의 착색제, 기계적 물성 및 접착력을 증가시키기 위한 글리시독시프로필 트리메톡시 실란 등의 실란 커플링제, 침투성 개선을 위한 표면장력 조절제, 요변성과 성형성을 개선하기 위한 퓸드(fumed) 실리카 등의 기타 첨가제가 추가로 사용될 수 있다.In addition to the components of the composition described above, antifoaming agents for facilitating the removal of bubbles as necessary without affecting the object of the present invention, colorants such as carbon black for product appearance, etc., glyces for increasing mechanical properties and adhesion. Other additives, such as silane coupling agents such as doxypropyl trimethoxy silane, surface tension modifiers for improving permeability, fumed silica for improving thixotropy and formability, and the like can be further used.
본 발명의 액상 에폭시 수지 조성물은, 예를 들면 에폭시 수지, 경화제, 경화촉진제, 무기충진재를 동시에 또는 원료별 순차적으로 투입하고 필요에 따라 가열처리를 하면서 교반, 혼합, 분산시킴으로써 제조할 수 있다. 이들 혼합물의 혼 합, 교반, 분산 등의 장치는 특별히 한정되지 않지만, 교반, 가열장치를 구비한 혼합분쇄기, 3축 롤밀, 볼밀, 진공유발기, 유성형 혼합기 등을 사용할 수 있으며, 또한 이들 장치를 적절하게 조합하여 사용할 수도 있다. The liquid epoxy resin composition of the present invention can be prepared by, for example, adding an epoxy resin, a curing agent, a curing accelerator, an inorganic filler at the same time or sequentially for each raw material, and stirring, mixing, and dispersing while heating as necessary. The apparatus for mixing, stirring, and dispersing these mixtures is not particularly limited, but a mixer, a three-axis roll mill, a ball mill, a vacuum induction machine, a planetary mixer, etc., which are equipped with a stirring and heating device, may be used. It can also use suitably combining.
본 발명에서의 액상 에폭시 수지 조성물의 점도는 25℃에서 2,000∼50,000 cps, 바람직하게는 4,000∼30,000 cps 이하의 범위가 되는 것이 좋다. 언더필 공정시 칩과 기판간의 간극 크기에 따라 다르지만, 점도가 50,000cps 초과인 경우에는 간극 충진 시간이 너무 길고 디스펜싱 공정에서의 작업성 또한 불량하다. The viscosity of the liquid epoxy resin composition in the present invention is preferably in the range of 2,000 to 50,000 cps, preferably 4,000 to 30,000 cps or less at 25 ° C. Although it depends on the gap size between the chip and the substrate during the underfill process, if the viscosity is greater than 50,000 cps, the gap filling time is too long and the workability in the dispensing process is also poor.
성형공정은 통상의 디스펜싱 공정을 사용할 수 있으며, 경화는 150℃에서 1시간 이상 오븐에서 경화하는 것이 바람직하다. 경우에 따라 경화 촉매의 조절을 통하여 경화 온도를 변화할 수 있으며, 경화 시간을 단축할 수 있다.The molding process may use a conventional dispensing process, the curing is preferably cured in an oven at 150 ℃ for 1 hour or more. In some cases, the curing temperature may be changed by adjusting the curing catalyst, and the curing time may be shortened.
이하에서, 실시예를 통하여 본 발명을 보다 상세하게 설명하고자 하나, 하기의 실시예는 설명의 목적을 위한 것으로 본 발명을 제한하고자 하는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the following Examples are for the purpose of explanation and are not intended to limit the present invention.
실시예 1∼3, 비교예 1∼4Examples 1-3 and Comparative Examples 1-4
표 1에 나타난 배합비대로 원료를 세라믹 재질의 교반기와 쓰리 롤밀을 이용하여 교반 및 분산, 혼합하여 에폭시 수지 조성물을 제조하였다. 제조된 에폭시 수지 조성물을 사용하여 테플론 금형에서 150℃에서 한시간 경화시킴으로써 W×T×L이 4mm×10mm×80mm인 시편을 제조하여 유리전이온도, 굴곡강도, 열팽창계수 등의 물성을 측정하고, 그 결과를 표 1에 나타내었다. 신뢰성 및 재작업 관련 테스트의 경우 W×L이 12mm×18mm인 칩을 장착한 기재에 언더필한 후 150℃에서 한시간 경화시킴으로서 시편을 제조하여 테스트하였다.The epoxy resin composition was prepared by stirring, dispersing, and mixing the raw materials with the mixing ratio shown in Table 1 using a ceramic stirrer and a three roll mill. By using the prepared epoxy resin composition, the specimen was cured at 150 ° C. for 1 hour at 150 ° C. to prepare a specimen having a W × T × L of 4 mm × 10 mm × 80 mm, and measured physical properties such as glass transition temperature, bending strength, and coefficient of thermal expansion. The results are shown in Table 1. Reliability and rework-related tests were made by testing the specimen by underfilling the substrate with a chip having a W × L of 12 mm × 18 mm and curing at 150 ° C. for one hour.
* 각주Footnotes
1) DIC : EXA-835LV1) DIC: EXA-835LV
2) DIC : EPICLON 7262) DIC: EPICLON 726
3) DIC : EPICLON 7073) DIC: EPICLON 707
4) KYOEISHA : EPOLIGHT 400E4) KYOEISHA: EPOLIGHT 400E
5) MEIWA : MEH-80005) MEIWA: MEH-8000
6) DIC : B-5706) DIC: B-570
[물성평가방법][Property evaluation method]
1) 점도1) viscosity
Cone & Plate 형 Brookfield 점도계를 사용하여 25℃에서 측정Measurement at 25 ° C using Cone & Plate type Brookfield Viscometer
2)유리전이온도2) glass transition temperature
DMTA(Dynamic Mechanical Thermal Analyser)로 평가 (승온속도 5℃/min, 1Hz)Evaluated by DMTA (Dynamic Mechanical Thermal Analyser) (Raising rate 5 ℃ / min, 1Hz)
3) 열팽창계수3) coefficient of thermal expansion
TMA(Thermomechanical Analyser)로 평가 (승온속도 10℃/min)Evaluation by TMA (Thermomechanical Analyser)
4) 굴곡강도4) Flexural Strength
UTM(Universal Test Machine)을 이용하여 ASTM D190에 의거 평가Evaluation according to ASTM D190 using UTM (Universal Test Machine)
5) 밴딩 탄성율5) banding modulus
DMTA(Dynamic Mechanical Thermal Analyser)로 평가 (승온속도 5℃/min, 1Hz)Evaluated by DMTA (Dynamic Mechanical Thermal Analyser) (Raising rate 5 ℃ / min, 1Hz)
6) 흡수율6) Absorption rate
PCT(Pressure Cooker Tester, 121℃, 2기압)에서 24시간 흡습시킨 후 무게변화를 측정Weight change after 24 hours of absorption at PCT (Pressure Cooker Tester, 121 ℃, 2 atmospheres)
7) 토출성7) Dischargeability
DISPENSER를 사용하여 NEEDLE SIZE 21G, 토출압 30ps에서 토출하였을 때 끊어짐 없이 일정량 토출 여부 확인 Confirm whether a certain amount of discharge is produced without disconnection when dispensing at NEEDLE SIZE 21G, discharge pressure 30ps using DISPENSER
8) 간극충진성 8) gap filling
12mm×18mm×0.3mm의 칩을 BT레진 기판에 간극 300㎛으로 탑재한 패키지의 칩 한쪽 가장자리에 70℃에서 언더필재를 도포하여 5분간 주입기를 둔 후 150℃에서 60분 경화시킨 패키지를 C-SAM을 활용하여 패키지 내부의 충진성을 확인 C-cured package was cured for 60 minutes at 150 ° C after applying an underfill material at 70 ° C for 5 minutes on a chip edge of a package mounted with a 12mm × 18mm × 0.3mm chip on a BT resin substrate with a gap of 300 μm. Leverage SAM to check filling inside packages
9) 재작업 시험9) rework test
12mm×18mm×0.3mm의 칩을 회로 기판에 간극 300㎛으로 탑재한 후 칩에 언더필재를 도포, 경화한 후 200℃ hot gun을 이용하여 재작업하고자 하는 칩을 국부적으로 10~20초간 가열하면서 금속 막대기를 이용하여 칩을 밀어 회로 기판으로부터 분리한다. 이때, 회로 기판의 솔더 레지스트 및 접속 부위의 손상 및 오염 여부를 확인한다. 12mm x 18mm x 0.3mm chip is mounted on the circuit board with a gap of 300㎛, underfill material is applied to the chip and cured, and then the chip to be reworked using a 200 ℃ hot gun is heated locally for 10 to 20 seconds. Use a metal stick to push the chip away from the circuit board. At this time, the solder resist and the connection portion of the circuit board is checked for damage or contamination.
10) 열충격 시험(Temperature Cycle Test)10) Temperature Cycle Test
JEDEC, JESD22-A104 시험조건 C(-65℃/+150℃)으로 평가한 후 C-SAM을 활용하여 박리발생여부 확인Evaluate JEDEC, JESD22-A104 test condition C (-65 ℃ / + 150 ℃) and check for peeling using C-SAM.
11) 기계적 강도 시험11) Mechanical strength test
12mm×18mm×0.3mm의 칩을 회로 기판에 간극 300㎛으로 탑재한 후 칩에 언더필재를 도포, 경화한 후 기판의 양 끝을 0.5N의 힘으로 비튼다. 상기 실험을 200회 반복하여 접속 부위 및 칩의 파괴 여부를 확인한다.A chip of 12 mm x 18 mm x 0.3 mm is mounted on a circuit board with a gap of 300 µm, and then the underfill material is applied to the chip and cured, and then both ends of the board are twisted with a force of 0.5 N. The experiment is repeated 200 times to determine whether the connection site and the chip are destroyed.
표 1의 물성 및 신뢰성 평가결과에서 볼 수 있듯이 선형 에폭시 수지를 이용한 경우에는 사용하지 않은 경우에 비하여 현저하게 낮은 탄성률을 달성되며, 특히 고온에서의 탄성율은 1/5 이상 낮은 값을 나타내었다. 이를 통하여 열적, 기계적 신뢰성을 달성함과 동시에 재작업이 가능해 짐을 확인하였다.As can be seen from the physical property and reliability evaluation results of Table 1, when the linear epoxy resin is used, a significantly lower elastic modulus is achieved than when the linear epoxy resin is not used, and the elastic modulus at a high temperature is 1/5 or lower. This confirms that thermal and mechanical reliability is achieved and rework is possible.
또한, 알킬화 페놀노볼락 경화제를 사용한 경우에는 산무수물 경화제를 사용한 경우에 비해 유리전이온도가 낮아지고, 또한 고온에서의 탄성율이 1/5 이상 낮은 값을 나타내었다. 이로 인해 재작업이 가능하고, 신뢰성 평가진행시 발생하는 열 응력을 줄여서 우수한 신뢰도 특성을 확보할 수 있을 것으로 판단된다. In addition, when the alkylated phenol novolak curing agent was used, the glass transition temperature was lower than that of the acid anhydride curing agent, and the elastic modulus at high temperature was 1/5 or lower. As a result, it is possible to rework and to secure excellent reliability characteristics by reducing the thermal stress generated during the reliability evaluation.
한편, 비교예 1에서 무기물의 충진이 없을 경우 솔더 범프와의 열팽창 계수가 차이가 커지고 열 응력이 커져 솔더 범프의 계면에서 파괴가 발생하였으며, 또한 흡습율의 증가로 인해 신뢰성을 떨어뜨렸다.On the other hand, in Comparative Example 1, when there was no filling of the inorganic material, the thermal expansion coefficient with the solder bumps increased and the thermal stress increased, resulting in breakage at the interface of the solder bumps, and deterioration of reliability due to an increase in the moisture absorption rate.
비교예 2에서 무기물 충진량이 60wt% 이상시 탄성률의 증가로 인하여 재작업이 어려워 지며, 열적, 기계적 신뢰성 평가진행시 발생하는 응력을 줄여 주지 못하여 칩의 파괴가 발생하였다.In Comparative Example 2, when the amount of inorganic filler was 60 wt% or more, reworking became difficult due to an increase in elastic modulus, and chip breakage occurred because the stress generated during thermal and mechanical reliability evaluation was not reduced.
상기 언급한 바와 같은 본 발명에 따른 재작업이 가능한 반도체 소자 언더필용 액상 에폭시 수지 조성물 및 이를 이용한 반도체 소자에 의하면, 재작업이 가능하며, 낮은 점도로 공정성이 우수할 뿐 아니라, 경화 후 충분히 낮은 탄성률 및 낮은 흡습율을 가짐으로서 향상된 내열충격성 및 내충격성을 나타내어 칩 패키지에 적용시 점도조절에 의해 작업성이 우수하고, 경화 후 저탄성률에 의한 높은 내열충격성, 내충격성을 나타내어 신뢰도 특성이 높은 특징이 있다.According to the liquid epoxy resin composition for reworking a semiconductor device underfill and a semiconductor device using the same according to the present invention as described above, reworking is possible, not only has excellent processability at low viscosity, but also a sufficiently low elastic modulus after curing. And with low moisture absorption, it shows improved thermal shock resistance and impact resistance, and when applied to chip package, it has excellent workability by viscosity control, high thermal shock resistance and impact resistance by low modulus after curing, and high reliability characteristics. have.
비록 본 발명이 상기 언급된 바람직한 실시예와 관련하여 설명되어졌지만, 발명의 요지와 범위로부터 벗어남이 없이 다양한 수정이나 변형을 하는 것이 가능하다. 따라서 특허청구범위는 본 발명의 요지에 속하는 이러한 수정이나 변형을 포함한다.Although the present invention has been described in connection with the above-mentioned preferred embodiments, it is possible to make various modifications or variations without departing from the spirit and scope of the invention. Thus, the claims include any such modifications or variations that fall within the spirit of the invention.
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|---|---|---|---|---|
| JP2001151994A (en) | 1999-11-26 | 2001-06-05 | Sumitomo Bakelite Co Ltd | Epoxy resin compositions and semiconductor device |
| KR20040055102A (en) * | 2002-12-20 | 2004-06-26 | 제일모직주식회사 | Liquid Epoxy Resin Composition for Encapsulation of Semiconductor |
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2004
- 2004-12-30 KR KR1020040116621A patent/KR100671136B1/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001151994A (en) | 1999-11-26 | 2001-06-05 | Sumitomo Bakelite Co Ltd | Epoxy resin compositions and semiconductor device |
| KR20040055102A (en) * | 2002-12-20 | 2004-06-26 | 제일모직주식회사 | Liquid Epoxy Resin Composition for Encapsulation of Semiconductor |
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| KR20060077969A (en) | 2006-07-05 |
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