KR100739973B1 - Equipment for antimony oxide vaporization used in semiconductor device fabrication - Google Patents

Equipment for antimony oxide vaporization used in semiconductor device fabrication Download PDF

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KR100739973B1
KR100739973B1 KR1020060080477A KR20060080477A KR100739973B1 KR 100739973 B1 KR100739973 B1 KR 100739973B1 KR 1020060080477 A KR1020060080477 A KR 1020060080477A KR 20060080477 A KR20060080477 A KR 20060080477A KR 100739973 B1 KR100739973 B1 KR 100739973B1
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heating
case
antimony oxide
furnace
semiconductor device
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KR1020060080477A
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Korean (ko)
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김민주
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동부일렉트로닉스 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides

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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
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Abstract

Antimony oxide vaporizing equipment for use in a fabrication of a semiconductor device is provided to shorten a standby time, a perimeter heating time and a stabilization time by directly heating a material box. A heating box(150) is filled with a deposition source material, and is surrounded by a heating coil(130). The heating coil is accommodated in a furnace-type case(110) which is installed on an oven case. The furnace-type case is made of graphite, and is provided with a connection terminal which is connected to the heating coil and an external power source. The oven case is provided with a power terminal which is connected to the connection terminal.

Description

반도체 장치 제조용 산화 안티몬 가스화 장비{Equipment for antimony oxide vaporization used in semiconductor device fabrication}Equipment for antimony oxide vaporization used in semiconductor device fabrication}

도1은 산화 안티몬 박막 형성을 위해 종래에 사용된 증착 장비 부분 단면도이다.1 is a partial cross-sectional view of deposition equipment conventionally used for forming antimony oxide thin films.

도2는 본 발명의 일 실시예를 나타내는 산화 안티몬 증착 장비의 부분 단면을 가진 평면도이다. Fig. 2 is a plan view with a partial cross section of an antimony oxide deposition apparatus showing one embodiment of the present invention.

본 발명은 반도체 장치 제조에 사용될 수 있는 산화안티몬 가스화 장비에 관한 것이며, 보다 상세하게는 산화안티몬 가스화 장비의 가스화를 위한 가열 장치 구성에 관한 것이다.The present invention relates to antimony oxide gasification equipment that can be used in semiconductor device manufacturing, and more particularly, to a heating device configuration for gasification of antimony oxide gasification equipment.

산화 안티몬(Sb2O3,Sb2O4)과 같은 금속 산화물, 세라믹 재료를 반도체 장치 형성에 있어서 하나의 박막으로 형성할 필요가 있다. 이런 필요성은 반도체 장치에 사용되는 캐퍼시터의 고유전막으로 사용되는 물질들을 볼 때 쉽게 발견할 수 있다.Metal oxides and ceramic materials, such as antimony oxide (Sb 2 O 3 , Sb 2 O 4 ), need to be formed in one thin film in forming a semiconductor device. This need can be easily found in view of the materials used for the high dielectric film of capacitors used in semiconductor devices.

이들 재료는 각각 안티몬 금속이나, 삼산화 안티몬을 공기중에서 산화시키거 나 가열시켜 발생하는 증기를 증착시켜 형성된다. 이들 산화 안티몬을 기판에 증착시키기 위해서는 소오스 물질을 가열할 수 있는 장비가 필요하다.Each of these materials is formed by depositing vapor generated by oxidizing or heating antimony metal or antimony trioxide in air. In order to deposit these antimony oxides on a substrate, equipment for heating the source material is required.

도1은 산화 안티몬 박막 형성을 위해 종래에 사용된 증착 장비이다. 1 is a deposition apparatus conventionally used for forming an antimony oxide thin film.

가령, Sb2O3를 넣을 수 있는 흑연(Graphite) 재질의 원통형 박스와 이 원통형 박스 외측에서 이 원통형 박스에 높은 열을 가해 줄 수 있도록 고안한 오븐(Oven:40)을 구비하여 이루어진다. 오븐 외측에 가열용 히터(30)가 코일 형태로 형성되어 있다. 오븐(40)을 통해 510℃~550℃의 온도로 Sb2O3를 가열하여 증착 공정에 필요한 가스를 추출하게 된다. 그러나 이런 종래의 증착 장비는 재질이 스테인레스 스틸(SUS)인 오븐이 가열되는 시간을 필요로 한다. 또한, 가열 과정에서 공급된 열이 실제로 흑연 재질의 박스(10) 내에 있는 Sb2O3에 도달하여 온도가 상승하는 시간, 그리고 그 온도가 흔들림 없이 일정하게 유지되는 안정화 단계에 이르는 시간 등 최소 30~60분 가량의 시간을 필요로 한다. For example, it comprises a cylindrical box made of graphite material into which Sb 2 O 3 can be put, and an oven 40 designed to apply high heat to the cylindrical box outside the cylindrical box. The heater 30 for heating is formed in the coil form outside the oven. By heating the Sb 2 O 3 to a temperature of 510 ℃ ~ 550 ℃ through the oven 40 to extract the gas required for the deposition process. However, such conventional deposition equipment requires a time for the oven, which is made of stainless steel (SUS), to heat up. In addition, the heat supplied during the heating process actually reaches Sb 2 O 3 in the box 10 made of graphite, the time when the temperature rises, and the time to reach the stabilization stage in which the temperature remains constant without shaking are at least 30. It takes about 60 minutes.

본 발명은 상술한 종래의 산화 안티몬 증착 장비의 문제점을 해결하기 위한 것으로, 단시간 내에 증착 공정을 수행할 수 있도록 하는 반도체 장치 제조용 산화 안티몬 증착 장비를 제공하는 것을 목적으로 한다.The present invention is to solve the problems of the conventional antimony oxide deposition equipment described above, an object of the present invention is to provide an antimony oxide deposition equipment for manufacturing a semiconductor device capable of performing the deposition process in a short time.

본 발명은 공정에 필요한 가열 시간을 줄여 열에너지 효율을 높일 수 있도록 하는 산화 안티몬 증착 장비를 제공하는 것을 목적으로 한다.An object of the present invention is to provide an antimony oxide deposition equipment to reduce the heating time required for the process to increase the thermal energy efficiency.

상기 목적을 달성하기 위한 본 발명의 산화 안티몬 증착 장비는 증착 소오스 물질(재료)이 수납되는 가열 박스, 상기 가열 박스를 감싸도록 형성된 가열 코일, 상기 가열 코일을 내부에 수용하는 로형 케이스, 로형 케이스가 설치되는 오븐 케이스를 구비하여 이루어지는 것을 특징으로 한다. The antimony oxide deposition apparatus of the present invention for achieving the above object is a heating box in which a deposition source material (material) is accommodated, a heating coil formed to surround the heating box, a furnace case for housing the heating coil therein, a furnace case It is characterized by comprising an oven case to be installed.

본 발명에서 증착 소오스가 수납되는 가열 박스는 하단이 폐쇄된 원통형 케이스와 원통형 케이스의 열린 상단을 마감하되 증착 소오스를 가열하여 얻는 가스스를 배출시키는 출구가 설치된 뚜껑으로 이루어질 수 있다. The heating box in which the deposition source is accommodated in the present invention may be formed of a cylindrical case having a closed bottom and an open top of the cylindrical case having an outlet for discharging the gas obtained by heating the deposition source.

본 발명에서 가열 코일은 로형 케이스 외측으로 접속 단자가 형성되어 전력을 인가하는 로형 케이스 외측의 파워 단자와 연결될 수 있다. 또한, 본 발명의 장비는 가열 박스를 지향하도록 공정 케이스에 설치되는 열전쌍(TC:thermo coupler) 게이지를 구비할 수 있다.In the present invention, the heating coil may be connected to a power terminal outside the furnace type case to which a connection terminal is formed outside the furnace case to apply electric power. The equipment of the present invention may also have a thermocoupler (TC) gauge installed in the process case to direct the heating box.

이하 도면을 참조하면서 실시예를 통해 본 발명을 보다 상세히 설명하기로 한다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

도2는 본 발명의 일 실시예를 나타내는 산화 안티몬 증착 장비의 부분 단면을 가진 평면도이다. Fig. 2 is a plan view with a partial cross section of an antimony oxide deposition apparatus showing one embodiment of the present invention.

종래의 단순한 흑연 원통형 박스는 Sb2O3를 담는 별도 가열 박스(150)에 발열 성능이 좋은 텅스텐 가열 코일(130)을 감고 그 위에 다시 흑연으로 이루어진 로 형 케이스(110)가 감싸진 형태로 바뀌어져 있다. 로형 케이스 외측에는 오븐(140)의 파워 단자(145)와 연결되도록 내부의 가열 코일(130)과 연결된 접속 단자(115)가 돌출되어 있다.Conventional simple graphite cylindrical box is wrapped in a tungsten heating coil (130) having good heat generation performance in a separate heating box 150 containing Sb 2 O 3 and is replaced with a furnace type case 110 made of graphite is wrapped thereon again Lost On the outside of the furnace case, a connection terminal 115 connected to the heating coil 130 therein is protruded to be connected to the power terminal 145 of the oven 140.

본 발명에서 증착 소오스가 수납되는 가열 박스는 하단이 폐쇄된 원통형 케이스와 원통형 케이스의 열린 상단을 마감하되 증착 소오스를 가열하여 얻는 가스스를 배출시키는 출구(121)가 설치된 뚜껑(120)으로 이루어질 수 있다. In the present invention, the heating box in which the deposition source is accommodated may include a cylindrical case with a closed bottom and a lid 120 provided with an outlet 121 for discharging the gas obtained by heating the deposition source while closing the open top of the cylindrical case. have.

본 발명에서 가열 코일은 로형 케이스 외측으로 접속 단자가 형성되어 전력을 인가하는 로형 케이스 외측의 파워 단자와 연결될 수 있다. 또한, 본 발명의 장비는 가열 박스를 지향하도록 공정 케이스에 설치되는 열전쌍(TC:thermo coupler) 게이지를 구비할 수 있다.In the present invention, the heating coil may be connected to a power terminal outside the furnace type case to which a connection terminal is formed outside the furnace case to apply electric power. The equipment of the present invention may also have a thermocoupler (TC) gauge installed in the process case to direct the heating box.

따라서, 산화 안티몬 증착 재료를 뚜껑을 열고 가열 박스(150)에 담은 후 가열 박스(150)를 포함하는 로형 케이스(110)를 오븐(140) 내측에 넣고 파워 단자(145)와 로형 케이스(110)에서 돌출된 접속 단자(115)를 커넥터 방식으로 연결한다. 커넥터는 열에 견딜 수 있는 재질이 되어야 하므로 도기나 기타 세라믹 물질로 이루어질 수 있다. 이러한 전기 접속 방식은 이동전화기의 충전 단자와 외부 전원 단자를 연결하는 방식과 유사하게 이루어질 수 있다.Accordingly, the antimony oxide deposition material is opened, the lid is placed in the heating box 150, and then the furnace-type case 110 including the heating box 150 is placed inside the oven 140, and the power terminal 145 and the furnace-type case 110 are provided. Connect the connection terminal 115 protruding from the connector method. The connector must be made of a material that can withstand heat and can be made of ceramics or other ceramic materials. The electrical connection method may be similar to the method of connecting the charging terminal and the external power terminal of the mobile phone.

오븐(140) 외장은 종래와 같은 스테인레스 스틸로 이루어질 수 있다. 열효율을 높이기 위해 오븐 내부에는 단열재를 사용할 수 있다. 오븐 내측에서 로형 케이스를 지향하도록 열전쌍 게이지9149)가 설치된다. 가열 코일을 통해 전달되는 열량을 조절하도록 파워 단자(145)와 전기적으로 연결되는 오븐 외측 공간에 외부 단 자(147) 및 도시되지 않은 콘트롤러와 전원이 설치된다. The oven 140 may be made of stainless steel as in the prior art. Thermal insulation can be used inside the oven to increase thermal efficiency. Thermocouple gauge 9149 is installed to direct the furnace case inside the oven. An external terminal 147 and a controller and power (not shown) are installed in an outer space of the oven electrically connected to the power terminal 145 to adjust the amount of heat transferred through the heating coil.

이러한 실시예와 같은 구성을 통해 증착 재료를 담는 가열 박스를 가열 코일이 직접 가열하게 되므로 종래에 흑연 로 밖에서 흑연로를 가열하던 방식에 비해 가열 효율이 높아지며, 가열 코일과 재료의 중간에 있는 열을 흡수하여 빼앗는 물질이 없어지므로 열 소모량도 줄일 수 있다. 또한 가열에 걸리는 시간이 현격하게 줄어들어 공정 시간을 줄일 수 있게 된다.Since the heating coil directly heats the heating box containing the deposition material through the configuration as in this embodiment, the heating efficiency is higher than the conventional method of heating the graphite furnace outside the graphite furnace, and absorbs heat in the middle of the heating coil and the material. It can reduce heat consumption by eliminating material taken away. In addition, the heating time is significantly reduced, which reduces the process time.

본 발명에 따르면 산화 안티몬 증착 장비에서 재료 박스를 직접 가열하여 간접 방식에 비해 대기 시간이나 주변 가열 시간, 안정화 시간을 줄이거나 없앨 수 있으므로 단시간 내에 증착 공정을 수행할 수 있게 된다.According to the present invention, since the material box is directly heated in the antimony oxide deposition equipment, the deposition process can be performed within a short time since the waiting time, ambient heating time, and stabilization time can be reduced or eliminated compared to the indirect method.

또한, 본 발명에 따르면, 공정에 필요한 가열 시간을 줄여 열에너지 효율을 높일 수 있다. In addition, according to the present invention, it is possible to increase the heat energy efficiency by reducing the heating time required for the process.

Claims (3)

증착 소오스 물질이 수납되는 가열 박스, A heating box in which the deposition source material is stored, 상기 가열 박스를 감싸도록 형성된 가열 코일, A heating coil formed to surround the heating box, 상기 가열 코일을 내부에 수용하는 로형 케이스, A furnace case accommodating the heating coil therein, 상기 로형 케이스가 설치되는 오븐 케이스를 구비하여 이루어지는 것을 특징으로 하는 반도체 장치 제조용 산화 안티몬 증착 장비. Antimony oxide deposition equipment for semiconductor device manufacturing, characterized in that it comprises an oven case in which the furnace type case is installed. 제 1 항에 있어서,The method of claim 1, 상기 가열 박스는 하단이 폐쇄된 원통형 케이스와 원통형 케이스의 열린 상단을 마감하되 증착 소오스를 가열하여 얻는 가스를 배출시키는 출구가 설치된 뚜껑으로 이루어지는 것을 특징으로 하는 반도체 장치 제조용 산화 안티몬 증착 장비.The heating box comprises a cylindrical case with a closed bottom end and an open top of the cylindrical case, the antimony oxide deposition equipment for semiconductor device manufacturing, characterized in that the outlet is provided with an outlet installed to discharge the gas obtained by heating the deposition source. 제 1 항에 있어서,The method of claim 1, 상기 로형 케이스는 흑연으로 이루어지며, The furnace case is made of graphite, 상기 로형 케이스에는 상기 가열 코일 및 외부 전원과의 연결을 위한 접속 단자가 외측으로 드러나게 설치되고, In the furnace type case, a connection terminal for connecting the heating coil and an external power source is exposed to the outside, 상기 오븐 케이스 내부에는 상기 접속 단자와 접속을 위한 파워 단자가 설치되는 것을 특징으로 하는 반도체 장치 제조용 산화 안티몬 증착 장비.Antimony oxide deposition equipment for manufacturing a semiconductor device, characterized in that the power terminal for the connection with the connection terminal is installed inside the oven case.
KR1020060080477A 2006-08-24 2006-08-24 Equipment for antimony oxide vaporization used in semiconductor device fabrication KR100739973B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1059797A (en) 1996-08-13 1998-03-03 Anelva Corp Vapor deposition source of vapor deposition device
US20020182885A1 (en) 1999-02-02 2002-12-05 The University Of Utah Vaporization and cracker cell method and apparatus
JP2003068665A (en) 2001-08-29 2003-03-07 Shin Etsu Handotai Co Ltd Antimony diffusion furnace and antimony diffusion method
US20030221617A1 (en) 2002-06-03 2003-12-04 You-Dong Lim Gas heating apparatus for chemical vapor deposition process and semiconductor device fabrication method using same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1059797A (en) 1996-08-13 1998-03-03 Anelva Corp Vapor deposition source of vapor deposition device
US20020182885A1 (en) 1999-02-02 2002-12-05 The University Of Utah Vaporization and cracker cell method and apparatus
JP2003068665A (en) 2001-08-29 2003-03-07 Shin Etsu Handotai Co Ltd Antimony diffusion furnace and antimony diffusion method
US20030221617A1 (en) 2002-06-03 2003-12-04 You-Dong Lim Gas heating apparatus for chemical vapor deposition process and semiconductor device fabrication method using same

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