CN104733273B - A kind of reaction chamber and plasma processing device - Google Patents
A kind of reaction chamber and plasma processing device Download PDFInfo
- Publication number
- CN104733273B CN104733273B CN201310700822.6A CN201310700822A CN104733273B CN 104733273 B CN104733273 B CN 104733273B CN 201310700822 A CN201310700822 A CN 201310700822A CN 104733273 B CN104733273 B CN 104733273B
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- cavity
- reaction chamber
- neck bush
- side wall
- coil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
Abstract
The present invention relates to a kind of reaction chamber and plasma processing device, it includes cavity, coil, neck bush and connector；Wherein, coil cavity the side wall for wrapping around cavity, neck bush the inner side of cavity around cavity side wall, and itself and the side wall of cavity between have uniform gap；Connector is connected with the inwall of cavity, and is fixed in cavity by being contacted with neck bush point.Above-mentioned reaction chamber can make the thermograde in each region of the side wall of cavity smaller, and the side wall such that it is able to avoid cavity is broken because the thermograde of its regional is excessive, reduces the maintenance cost of reaction chamber；Accumulation of the accessory substance in cavity can also be reduced, such that it is able to make the maintenance period of reaction chamber more long, the effective storage life of reaction chamber is improved, and lift production capacity to a certain extent.Additionally, neck bush is contacted by the point with connector and is fixed in cavity, its installation and removal is very simple, consequently facilitating safeguarding.
Description
Technical field
The present invention relates to semiconductor equipment manufacture field, in particular it relates to a kind of reaction chamber and plasma process set
It is standby.
Background technology
Plasma processing device generally comprises reaction chamber, it performs etching in reaction chamber to workpiece to be machined,
The techniques such as deposition.
Fig. 1 is the structural representation of the reaction chamber of existing the first plasma processing device.Fig. 1 is refer to, instead
Answering chamber includes cavity 1, bogey 2, coil 3, radio-frequency power supply（Not shown in figure）, grid bias power supply（Not shown in figure）With take out
Vacuum plant（Not shown in figure）.Wherein, cavity 1 is provided with air inlet 4 and exhaust outlet 5, and exhaust outlet 5 connects with vacuum extractor
Connect；Inside cavity 1, it is used to carry workpiece to be machined 6 bogey 2；Grid bias power supply is connected with bogey 2, is used for
Loaded to bogey 2 and biased；Coil 3 is surrounded on the outside of the side wall 7 of cavity 1, and side wall 7 is made up of aluminium oxide ceramics；Penetrate
Frequency power is connected with coil 3, for loading radio-frequency power to coil 3.
When above-mentioned plasma processing device performs etching technique to workpiece to be machined, first by vacuum extractor by chamber
Body 1 is vacuumized, and then by air inlet 4 to being passed through process gas in cavity 1；Then, radio-frequency power supply loads radio frequency work(to coil 3
Rate, it is plasma coil 3 is excited the above-mentioned process gas being passed through in cavity 1；Grid bias power supply is loaded partially to bogey 2
Pressure, attracts the Ions Bombardment workpiece to be machined 6 in above-mentioned plasma or is reacted with workpiece to be machined 6, so as to added
The surface etch of work workpiece 6 goes out corresponding figure.
In above process, rf bias can be produced on side wall 7, the rf bias attract the Ions Bombardment in plasma
Side wall 7, and the temperature of side wall 7 is raised with the bombardment of ion；Also, in above process, on side wall 7 with coil 2 in
The rf bias in the corresponding region in portion, the i.e. middle part of side wall 7 are maximum, so that in the most Ions Bombardment side walls 7 of its attraction
Portion region, makes the temperature at the middle part of side wall 7 higher than the temperature at its two ends；Simultaneously as side wall 7 is made up of aluminium oxide ceramics, its
Thermal conductivity is relatively low, so causes the upper and lower ends of side wall 7 and its heat transfer can be gone out by heat transfer, and in side wall 7
Portion can then be limited to its relatively low thermal conductivity cannot go out its heat transfer, so as in each area vertically of side wall 7
Larger thermograde is formed between domain；And then, when radio-frequency power supply is larger to the horizontal power that coil 2 is loaded, during such as 5000W,
Said temperature gradient can exceed the tolerance range of side wall 7, side wall 7 is therefore broken.
Fig. 2 is the structural representation of the reaction chamber of existing second plasma processing device.Fig. 2 is refer to, should
The reaction chamber of plasma processing device includes cavity 11, bogey 12, target 13, coil 14, radio-frequency power supply 15, bias
Power supply 16 and Faraday shield 17.Wherein, bogey 12 is located at the inside of cavity 11, for carrying workpiece to be machined；Target
Material 13 is located at the top of cavity 11；Grid bias power supply 16 is connected with target 13, is biased for being loaded to target 13；Coil 14 is surrounded on
The side-wall outer side of cavity 11；Radio-frequency power supply 15 is connected with coil 14, for loading radio-frequency power to coil 14；Faraday shield
17 are made of an electrically conducting material, or are made up of the insulating materials that surface is coated with conductive layer, its inside sidewalls for being fixed on cavity 11,
And the inside sidewalls of cavity 11 are surround close to one week.
When using above-mentioned plasma processing device to workpiece to be machined surface deposition film, to being passed through work in cavity 11
Skill gas；Then, radio-frequency power supply 15 loads radio-frequency power to coil 14, coil 14 is excited the above-mentioned technique being passed through in cavity 11
Gas is plasma；Grid bias power supply 16 attracts the Ions Bombardment target in above-mentioned plasma to bias is loaded on target 13
13, target atom or molecule on target 13 is departed from from the surface of target 13, and deposit to the surface of workpiece to be machined, from
And form film on workpiece to be machined surface.In above process, Faraday shield 17 can shield electromagnetic field, make thereon
Rf bias it is relatively low, so as to reduce bombardment of the plasma to cavity 11, and corroding of reducing that cavity 11 is subject to, Jin Erti
The service life of high beta plasma process equipment, reduces its use cost.
Above-mentioned plasma processing device is inevitably present following problems in actual use, i.e.,：Due to faraday
Shielding part 17 is fixed on the inside sidewalls of cavity 11, its coupling energy that coil 14 can be reduced in technical process, makes coil 14
Exciting the coupling efficiency of plasma reduces；Meanwhile, in technical process, the ion in plasma can be subject to Faraday shield
The attraction of the rf bias on part 17 and bombard Faraday shield 17, make it have temperature higher, the temperature can be by heat
Cavity 11 is passed to, makes cavity 11 that there is temperature higher；Additionally, in above-mentioned plasma processing device to being processed work
When part performs etching technique, the above-mentioned Faraday shield 17 of Ions Bombardment in plasma can make the conductive material on its surface
Molecule or atom depart from from its surface, and fall into cavity 11 or on workpiece to be machined, so as to cause to cavity 11 or be added
The pollution of work workpiece.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that a kind of reaction chamber and wait
Plasma processing apparatus, it can make the thermograde between the side wall regional of the cavity of reaction chamber in technical process
Smaller, the side wall such that it is able to prevent reaction chamber is broken because the thermograde between its regional is excessive.
A kind of reaction chamber is provided to realize the purpose of the present invention, including cavity, coil, neck bush and connector, institute
State the side wall that wraps around cavity of the coil in cavity, the neck bush the inner side of cavity around cavity side wall, and its with
There is uniform gap between the side wall of cavity；The connector is connected with the inwall of the cavity, and by with the liner
Set point contacts and the neck bush is fixed in the cavity.
Wherein, the neck bush surround the side wall and roof of the cavity, and its side wall with cavity in the inner side of cavity
There is uniform gap and roof between.
Wherein, the thickness of the neck bush is 3-5mm.
Wherein, the gap between the neck bush and the side wall of cavity is 1-2mm.
Wherein, the gap between the neck bush and the side wall and roof of cavity is 1-2mm.
Wherein, the neck bush is made up of exotic material.
Wherein, the thermal conductivity of the connector is less than 0.2W/（m·K）.
Wherein, the thermal conductivity of the neck bush is more than 20W/（m·K）.
Wherein, the neck bush is made up of aluminium oxide ceramics or aluminium nitride ceramics.
Used as another technical scheme, the present invention also provides a kind of plasma processing device, including reaction chamber, described
Reaction chamber is used to carry out PROCESS FOR TREATMENT to workpiece to be machined, wherein, the reaction chamber is using the above-mentioned anti-of present invention offer
Answer chamber.
The invention has the advantages that：
The reaction chamber that the present invention is provided, its neck bush, around the side wall of cavity, makes neck bush in technique mistake in cavity
In journey by ion bombardment and temperature raise；And because neck bush is fixed in cavity by the point contact with connector
It is interior, and between neck bush and the side wall of cavity have uniform gap, make neck bush during its intensification, be only capable of by
The side wall radiations heat energy of cavity and outwards transmission is little by way of carrying out heat transfer between connector and the inwall of cavity
Partial heat；This makes increasing extent of temperature very little of the side wall of cavity in technical process, also makes the temperature of neck bush very high, and
Make the temperature between each region of neck bush highly uniform；Wherein, temperature between each region of neck bush is highly uniform to make neck bush
The even heat on each region of the side wall of cavity is radiated to, and makes the thermograde in each region of the side wall of cavity smaller,
Side wall such that it is able to avoid cavity is broken because the thermograde between its regional is excessive, reduces the dimension of reaction chamber
Shield cost；The temperature of neck bush is very high, and accessory substance attached to it can be made to gasify, and then is discharged cavity, thus subtracts
Small accumulation of the accessory substance in cavity, so that the maintenance period of reaction chamber is more long, improves effectively using for reaction chamber
Time, and production capacity is lifted to a certain extent.Additionally, neck bush is contacted by the point with connector and is fixed in cavity,
Its installation and removal is very simple, consequently facilitating safeguarding.
The plasma processing device that the present invention is provided, it uses the above-mentioned reaction chamber of present invention offer, can make it
Less thermograde is kept in technical process between each region of the side wall of reaction chamber, such that it is able to avoid its reaction chamber
Thermograde is excessive and be broken between the side Bi Yinge regions of room, reduces the maintenance cost of its reaction chamber；Also, can be with
Reduce accumulation of the accessory substance in the cavity of reaction chamber produced in technical process so that the maintenance period of reaction chamber compared with
It is long, the effective storage life of reaction chamber is improved, and lift the production capacity of plasma processing device to a certain extent.
Brief description of the drawings
Fig. 1 is the structural representation of the reaction chamber of existing the first plasma processing device；
Fig. 2 is the structural representation of the reaction chamber of existing second plasma processing device；
Fig. 3 is the structural representation of reaction chamber provided in an embodiment of the present invention；
Fig. 4 is side wall and the structural representation of roof of the neck bush around cavity；And
Fig. 5 is that reaction chamber is the structural representation of PVD chamber.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The reaction chamber and plasma processing device of offer are described in detail.
Fig. 3 is the structural representation of reaction chamber provided in an embodiment of the present invention.Fig. 3 is refer to, the reaction chamber is quarter
Erosion chamber, it is used to perform etching technique to workpiece to be machined, and it specifically includes cavity 20, bogey 21, coil 22, radio frequency
Power supply 23, grid bias power supply 24, neck bush 25, connector 26 and vacuum extractor（Not shown in figure）.Wherein, include in cavity 20
First space 201 and second space 202, the first space 201 connect with second space 202, and second space 202 side wall 203
It is formed of an electrically insulating material；Cavity 20 is provided with air inlet 204 and exhaust outlet 205, and exhaust outlet 205 is connected with vacuum extractor；
Bogey 21 is arranged in cavity 20, and it is used to carry workpiece to be machined 27；Grid bias power supply 24 is connected with bogey 21, uses
Biased in being loaded to bogey 21；In the side wall for wrapping around cavity 20 of cavity 20, specifically, coil 22 surround coil 22
The side wall 203 of second space 202 in cavity 20；Radio-frequency power supply 23 is connected with coil 22, for loading radio-frequency power to coil 22；
Neck bush 25 surround the side wall of cavity 20 in the inner side of cavity 20, and it has uniform gap and the side wall of cavity 20 between,
Specifically, around the side wall 203 of second space 202 in cavity 20, the gap between neck bush 25 and side wall 203 is neck bush 25
1-2mm；Connector 26 is connected with the inwall of cavity 20, and neck bush 25 is fixed on into cavity by contacting with 25 points of neck bush
In 20, specifically, connector 26 is connected with the side wall 203 of second space 202 in cavity 20.
So that above-mentioned reaction chamber performs etching technique to workpiece to be machined 27 as an example, its detailed process is：First, it is true by taking out
Empty device extracts the gas in cavity 20 out from exhaust outlet 205, makes to reach predetermined vacuum in cavity 20；Then, by entering
Gas port 204 in cavity 20 to being passed through process gas；Radio-frequency power is loaded from radio-frequency power supply 23 to coil 22, coil 22 is excited
It is plasma to state the process gas being passed through in cavity 20；And bias is loaded from grid bias power supply 24 to bogey 21, in attraction
State the surface of workpiece to be machined 27 or occur with workpiece to be machined 27 that the Ions Bombardment in plasma is placed on bogey 21
Reaction, so as to go out corresponding figure in the surface etch of workpiece to be machined 27.
In above process, due to neck bush 25 in cavity 20 around side wall 203, make the ion in plasma can only
Bombardment neck bush 25, and cannot bombard to side wall 203；In the case, with bombardment neck bush 25 ion quantity increasing
Plus, the temperature of neck bush 25 can be stepped up.And during the temperature of neck bush 25 is elevated, due to being vacuum in cavity 20
Environment, neck bush 25 cannot outwards transmit heat by way of thermal convection current, and this makes it be only capable of by the side on the outside of it
The radiations heat energy of wall 203 and outwards transmit heat by way of carrying out heat transfer between connector 26 and side wall 203.But
In above two mode, due to being that point is contacted between neck bush 25 and connector 26, neck bush 25 is set to be transferred to through connector 26
Heat on side wall 203 seldom, can be ignored in actual applications；And pass through radiation transmission heat efficiency it is very low, this
So that neck bush 25 is only capable of in very least a portion of heat transfer to side wall 203；This causes side wall 203 in above-mentioned technical process
Increasing extent of temperature very little；Also, because neck bush 25 is only capable of outwards transmitting little heat, neck bush 25 can have temperature very high
Degree, simultaneously because the conduction in heat each region in neck bush 25, the temperature in each region can be highly uniform on neck bush 25, and this is just
The even heat for making it be radiated on each region of side wall 203, so that the thermograde in each region is smaller on side wall 203, so
It is avoided that there is the situation that side wall 203 is broken because the thermograde of its regional is excessive.Additionally, in above-mentioned etching technics mistake
Cheng Zhong, neck bush 25 has temperature very high, the accessory substance produced in the technical process being attached on neck bush 25 is held very much
Easily gasified, and then be discharged cavity 20, this reduces accumulation of the accessory substance in cavity 20, such that it is able to make reaction chamber
The maintenance period of room is more long, improves the effective storage life of reaction chamber, and lifts production capacity to a certain extent.
The reaction chamber that the present embodiment is provided, its neck bush 25, around the side wall of cavity 20, makes neck bush in cavity 20
25 in technical process by ion bombardments and temperature raise；And because neck bush 25 is contacted by the point with connector 26
It is fixed in cavity 20, and there is uniform gap between neck bush 25 and the side wall of cavity 20, neck bush 25 is risen at it
In the process of temperature, it is only capable of entering by between the side wall radiations heat energy of cavity 20 and the inwall by connector 26 and cavity 20
The mode of row heat transfer outwards transmits very least a portion of heat；This makes increasing extent of temperature of the side wall of cavity 20 in technical process very
It is small, also make the temperature of neck bush 25 very high, and make the temperature between each region of neck bush 25 highly uniform；Wherein, neck bush
Even heat on each region of the highly uniform side wall for making neck bush 25 be radiated to cavity 20 of temperature between 25 each regions, with
And make the thermograde in each region of the side wall of cavity 20 smaller, such that it is able to avoid the side wall of cavity 20 because of its regional
Thermograde is excessive and is broken, and reduces the maintenance cost of reaction chamber；The temperature of neck bush 25 is very high, can make to be attached to it
On accessory substance gasification, and then cavity 20 is discharged, this reduces accumulation of the accessory substance in cavity 20, such that it is able to make
The maintenance period of reaction chamber is more long, improves the effective storage life of reaction chamber, and lifts production capacity to a certain extent.This
Outward, neck bush 25 is contacted by the point with connector 26 and is fixed in cavity 20, and its installation and removal is very simple, so that
It is easy to safeguard.
It is readily appreciated that, in the present embodiment, the thickness of neck bush 25 is smaller, and it excites the coupling of plasma to coil 22
The influence of efficiency is just smaller.In actual applications, the thickness of neck bush 25 can be 3-5mm, can so make neck bush 25 pairs
The influence of the coupling efficiency of coil 22 is small as much as possible, and neck bush 25 is had sufficiently structural strength.
In technical process, neck bush 25 has temperature very high, and its temperature can reach hundreds of degrees Celsius, and this is required
Neck bush 25 can in hot environment normal work；Specifically, in the present embodiment, neck bush 25 is by aluminium oxide ceramics, nitrogen
Change the exotic materials such as aluminium ceramics to be made；More than 1000 DEG C of high temperature can be born due to aluminium oxide ceramics and aluminium nitride ceramics,
The neck bush 25 being made of above-mentioned aluminium oxide ceramics and aluminium nitride ceramics can in technical process normal work without being damaged
It is bad.
In the present embodiment, connector 26 is heat insulator, and its thermal conductivity is less than 0.2W/（m·K）, can so make interior
It is few as much as possible that bushing 25 conducts heat to the inwall of cavity 20 through connector 26, outside such that it is able to reduce neck bush 25
The heat of transmission, and avoid making the temperature in the region being connected with connector 26 on cavity 20 apparently higher than other regions of cavity 20
Temperature, larger thermograde is formed on cavity 20.
In the present embodiment, neck bush 25 is the good conductor of heat, and its thermal conductivity is more than 20W/（m·K）, in the case,
Conduction of the heat on neck bush 25 faster, so as in technical process, can make the temperature of the regional of neck bush 25 more equal
It is even, and make its heat of radiation on the side wall regional of cavity 20 evenly, so as to further reduce on the side wall of cavity 20
Thermograde between each region.
It should be noted that in the present embodiment, neck bush 25 surround the side wall of cavity 20, but this in the inner side of cavity 20
Invention is not limited to this, in actual applications, can also make more multizone of the neck bush 25 on the inwall of cavity 20；For example,
As shown in figure 4, neck bush 25 surround the side wall and roof of cavity 20, and itself and the side wall of cavity 20 and top in the inner side of cavity 20
There is equably gap, in the case, neck bush 25 can make the side wall of cavity 20 and roof in technical process between wall
Less thermograde is kept, so as to the side wall and roof that prevent cavity 20 are broken because its thermograde is excessive；Specifically, it is interior
Gap between bushing 25 and the side wall and roof of cavity 20 can be 1-2mm.
Also, it should be noted that in the present embodiment, reaction chamber is etching cavity, but the present invention is not limited thereto,
In practical application, reaction chamber can also be PVD（Physical Vapor Deposition, physical vapour deposition (PVD)）Chamber.
In this case, as shown in figure 5, reaction chamber include cavity 20, bogey 21, coil 22, radio-frequency power supply 23, neck bush 25,
Connector 26, target 28 and grid bias power supply 29；Wherein, bogey 21 is arranged in cavity, and it is used to carry workpiece to be machined
27；Target 28 is located at the top of cavity 20；Grid bias power supply 29 is connected with target 28, is biased for being loaded to target 28；Coil 22
In the side wall for wrapping around cavity 20 of cavity 20；Radio-frequency power supply 23 is connected with coil 22, for loading radio frequency work(to coil 22
Rate；Neck bush 25 the inner side of cavity 20 around cavity 20 side wall, and itself have and the side wall of cavity 20 between it is uniform between
Gap；Connector 26 is connected with the inwall of cavity 20, and neck bush 25 is fixed on into cavity 20 by contacting with 25 points of neck bush
It is interior.In actual applications, above-mentioned reaction chamber can be by sputtering at workpiece to be machined surface deposition film, its detailed process
It is：To being passed through process gas in cavity 20；Then, radio-frequency power is loaded from radio-frequency power supply 23 to coil 22, excites coil 22
The above-mentioned process gas being passed through in cavity 20 is plasma；Grid bias power supply 29 is loaded to target 28 and biased, attract above-mentioned grade from
Ions Bombardment target 28 in daughter, makes the target atom or molecule on the surface of target 28 depart from from the surface of target 28, and deposit extremely
On the surface of workpiece to be machined, so as to the deposition film on workpiece to be machined.Additionally, reaction chamber can also be CVD
（Chemical Vapor Deposition, chemical vapor deposition）Chamber.
Used as another technical scheme, the embodiment of the present invention also provides a kind of plasma processing device, and it includes reaction
Chamber, the reaction chamber is used to carry out workpiece to be machined PROCESS FOR TREATMENT, also, the reaction chamber uses above-mentioned implementation of the invention
The reaction chamber that example is provided.
Plasma processing device provided in an embodiment of the present invention, it uses the reaction chamber that the above embodiment of the present invention is provided
Room, can make each region of the side wall of its reaction chamber that less thermograde is kept in technical process, such that it is able to avoid
Thermograde is excessive and be broken between the side Bi Yinge regions of its reaction chamber, reduces the maintenance cost of its reaction chamber；And
And, accumulation of the accessory substance produced in technical process in the cavity of reaction chamber can also be reduced, so that reaction chamber
Maintenance period is more long, improves the effective storage life of reaction chamber, and lifts plasma processing device to a certain extent
Production capacity.
It is understood that the embodiment of above principle being intended to be merely illustrative of the present and the exemplary implementation for using
Mode, but the invention is not limited in this.For those skilled in the art, essence of the invention is not being departed from
In the case of god and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of reaction chamber, including cavity, coil, in the side wall for wrapping around cavity of cavity, its feature exists the coil
Also include neck bush and connector in, the reaction chamber, the neck bush the inner side of cavity around cavity side wall, and its
There is uniform gap and the side wall of cavity between；
The connector is connected with the inwall of the cavity, and is fixed the neck bush by being contacted with the neck bush point
In the cavity.
2. reaction chamber according to claim 1, it is characterised in that the neck bush is in the inner side of cavity around the chamber
The side wall and roof of body, and it has uniform gap and the side wall and roof of cavity between.
3. reaction chamber according to claim 1, it is characterised in that the thickness of the neck bush is 3-5mm.
4. reaction chamber according to claim 1, it is characterised in that the gap between the neck bush and the side wall of cavity
It is 1-2mm.
5. reaction chamber according to claim 2, it is characterised in that between the neck bush and the side wall and roof of cavity
Gap be 1-2mm.
6. reaction chamber according to claim 1, it is characterised in that the neck bush by 1000 DEG C of high temperature resistant material system
Into.
7. reaction chamber according to claim 1, it is characterised in that the thermal conductivity of the connector is less than 0.2W/（m·
K）.
8. reaction chamber according to claim 1, it is characterised in that the thermal conductivity of the neck bush is more than 20W/（m·
K）.
9. the reaction chamber according to claim 6 or 8, it is characterised in that the neck bush is by aluminium oxide ceramics or nitridation
Aluminium ceramics are made.
10. a kind of plasma processing device, including reaction chamber, the reaction chamber is used to carry out technique to workpiece to be machined
Treatment, it is characterised in that the reaction chamber is using the reaction chamber described in claim 1-9 any one.
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| CN201310700822.6A CN104733273B (en) | 2013-12-18 | 2013-12-18 | A kind of reaction chamber and plasma processing device |
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| US7223321B1 (en) * | 2002-08-30 | 2007-05-29 | Lam Research Corporation | Faraday shield disposed within an inductively coupled plasma etching apparatus |
| CN101196750A (en) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| CN102573429A (en) * | 2010-12-09 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding apparatus, processing method and device, semiconductor device |
| CN105190837A (en) * | 2013-05-09 | 2015-12-23 | 马特森技术有限公司 | System and method for protection of vacuum seals in plasma processing systems |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100855323B1 (en) * | 2006-12-27 | 2008-09-04 | 세메스 주식회사 | Processing chamber and apparatus of treating substrate using plasma |
| JP4931716B2 (en) * | 2007-07-18 | 2012-05-16 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma generation chamber |
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2013
- 2013-12-18 CN CN201310700822.6A patent/CN104733273B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7223321B1 (en) * | 2002-08-30 | 2007-05-29 | Lam Research Corporation | Faraday shield disposed within an inductively coupled plasma etching apparatus |
| CN101196750A (en) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| CN102573429A (en) * | 2010-12-09 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding apparatus, processing method and device, semiconductor device |
| CN105190837A (en) * | 2013-05-09 | 2015-12-23 | 马特森技术有限公司 | System and method for protection of vacuum seals in plasma processing systems |
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