CN104733273A - Reaction cavity and plasma processing device - Google Patents
Reaction cavity and plasma processing device Download PDFInfo
- Publication number
- CN104733273A CN104733273A CN201310700822.6A CN201310700822A CN104733273A CN 104733273 A CN104733273 A CN 104733273A CN 201310700822 A CN201310700822 A CN 201310700822A CN 104733273 A CN104733273 A CN 104733273A
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- cavity
- reaction chamber
- neck bush
- sidewall
- cavity body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
Abstract
The invention relates to a reaction cavity and a plasma processing device. The reaction cavity comprises a cavity body, a coil, an inner lining and a connecting piece, wherein the coil is arranged on the outer side of the cavity body and surrounds the side wall of the cavity body, the inner lining is arranged on the inner side of the cavity body and surrounds the side wall of the cavity body, and an even gap is reserved between the inner lining and the side wall of the cavity body. The connecting piece is connected with the inner wall of the cavity body and is in point contact with the inner lining to be fixed into the cavity body. By means of the reaction cavity, the temperature gradients of the areas of the side wall of the cavity body can be small, breaking, caused by the excessively-large temperature gradients of the areas of the side wall of the cavity body, of the side wall of the cavity body can be avoided accordingly, and the maintenance cost of the reaction cavity is reduced; accumulation of by-products in the cavity body can further be reduced, the maintenance interval of the reaction cavity can be longer accordingly, the service life of the reaction cavity can be prolonged, and the capacity can be improved to a certain degree. In addition, as the inner lining is in point contact with the connecting piece to be fixed into the cavity body, assembling and disassembling are quite simple, and therefore convenience is brought to maintaining.
Description
Technical field
The present invention relates to semiconductor equipment and manufacture field, particularly, relate to a kind of reaction chamber and plasma processing device.
Background technology
Plasma processing device generally comprises reaction chamber, the techniques such as it etches workpiece to be machined in reaction chamber, deposition.
Fig. 1 is the structural representation of the reaction chamber of the first plasma processing device existing.Please refer to Fig. 1, reaction chamber comprises cavity 1, bogey 2, coil 3, radio-frequency power supply (not shown), grid bias power supply (not shown) and vacuum extractor (not shown).Wherein, cavity 1 is provided with air inlet 4 and exhaust outlet 5, and exhaust outlet 5 is connected with vacuum extractor; It is inner that cavity 1 is located at by bogey 2, and it is for carrying workpiece to be machined 6; Grid bias power supply is connected with bogey 2, for loading bias voltage to bogey 2; Coil 3 is surrounded on the outside of the sidewall 7 of cavity 1, and sidewall 7 is made up of aluminium oxide ceramics; Radio-frequency power supply is connected with coil 3, for loading radio-frequency power to coil 3.
When above-mentioned plasma processing device carries out etching technics to workpiece to be machined, first by vacuum extractor, cavity 1 is vacuumized, and then in cavity 1, pass into process gas by air inlet 4; Then, radio-frequency power supply loads radio-frequency power to coil 3, makes coil 3 excite the above-mentioned process gas passed in cavity 1 to be plasma; Grid bias power supply loads bias voltage to bogey 2, attracts the Ions Bombardment workpiece to be machined 6 in above-mentioned plasma or reacts with workpiece to be machined 6, thus going out corresponding figure in workpiece to be machined 6 surface etch.
In above process, sidewall 7 can produce rf bias, this rf bias attracts the Ions Bombardment sidewall 7 in plasma, and the temperature of sidewall 7 is raised with the bombardment of ion; Further, in above process, region corresponding with the middle part of coil 2 on sidewall 7, namely the rf bias at the middle part of sidewall 7 is maximum, thus it attracts the central region of maximum Ions Bombardment sidewalls 7, makes the temperature of temperature higher than its two ends at the middle part of sidewall 7; Simultaneously, because sidewall 7 is made up of aluminium oxide ceramics, its thermal conductivity is lower, cause the two ends up and down of sidewall 7 can be passed by its heat by heat transfer like this, the middle part of sidewall 7 then can be limited to its lower thermal conductivity and its heat cannot be passed, thus forms larger temperature gradient between the regional vertically of sidewall 7; And then the horizontal power loaded to coil 2 when radio-frequency power supply is comparatively large, and during as 5000W, said temperature gradient can exceed the tolerance range of sidewall 7, makes sidewall 7 therefore rupture.
Fig. 2 is the structural representation of the reaction chamber of existing the second plasma processing device.Please refer to Fig. 2, the reaction chamber of this plasma processing device comprises cavity 11, bogey 12, target 13, coil 14, radio-frequency power supply 15, grid bias power supply 16 and Faraday shield 17.Wherein, the inside of cavity 11 is located at by bogey 12, for carrying workpiece to be machined; Target 13 is located at the top of cavity 11; Grid bias power supply 16 is connected with target 13, for loading bias voltage to target 13; Coil 14 is surrounded on the side-wall outer side of cavity 11; Radio-frequency power supply 15 is connected with coil 14, for loading radio-frequency power to coil 14; Faraday shield 17 is made up of electric conducting material, or the insulating material being coated with conductive layer by surface is made, and it is fixed on the inside sidewalls of cavity 11, and around the inside sidewalls of cavity 11 close to one week.
When using above-mentioned plasma processing device to workpiece to be machined surface deposition film, in cavity 11, pass into process gas; Then, radio-frequency power supply 15 loads radio-frequency power to coil 14, makes coil 14 excite the above-mentioned process gas passed in cavity 11 to be plasma; Grid bias power supply 16 loads bias voltage on target 13, attract the Ions Bombardment target 13 in above-mentioned plasma, target atom on target 13 or molecule are departed from the surface from target 13, and is deposited on the surface of workpiece to be machined, thus form film on the surface at workpiece to be machined.In above process, Faraday shield 17 can shield electromagnetic, makes the rf bias on it lower, thus reduce plasma to the bombardment of cavity 11, and the erosion that reduction cavity 11 is subject to, and then improve the useful life of plasma processing device, reduce its use cost.
Inevitably there is following problems in actual use in above-mentioned plasma processing device, that is: because Faraday shield 17 is fixed on the inside sidewalls of cavity 11, it can reduce the coupling energy of coil 14 in technical process, and the coupling efficiency of coil 14 activated plasma is reduced; Simultaneously, in technical process, the ion in plasma can be subject to the attraction of the rf bias on Faraday shield 17 and bombard Faraday shield 17, makes it have higher temperature, this temperature can pass to cavity 11 by heat transfer, makes cavity 11 have higher temperature; In addition, when above-mentioned plasma processing device carries out etching technics to workpiece to be machined, the above-mentioned Faraday shield 17 of Ions Bombardment in plasma, the electric conducting material molecule on its surface or atom can be made to depart from the surface from it, and fall in cavity 11 or on workpiece to be machined, thus cause the pollution to cavity 11 or workpiece to be machined.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, propose a kind of reaction chamber and plasma processing device, it can make the temperature gradient between the sidewall regional of the cavity of reaction chamber less in technical process, thus can prevent the sidewall of reaction chamber from rupturing because the temperature gradient between its regional is excessive.
A kind of reaction chamber is provided for realizing object of the present invention, comprise cavity, coil, neck bush and connector, described coil at the outer ring of cavity around the sidewall of cavity, the sidewall of described neck bush in the inner side of cavity around cavity, and there is between itself and the sidewall of cavity uniform gap; Described connector is connected with the inwall of described cavity, and by described neck bush being fixed in described cavity with described neck bush point cantact.
Wherein, described neck bush around the sidewall of described cavity and roof, and has uniform gap between the sidewall of itself and cavity and roof in the inner side of cavity.
Wherein, the thickness of described neck bush is 3-5mm.
Wherein, the gap between described neck bush and the sidewall of cavity is 1-2mm.
Wherein, the gap between the sidewall of described neck bush and cavity and roof is 1-2mm.
Wherein, described neck bush is made up of exotic material.
Wherein, the thermal conductivity of described connector is less than 0.2W/(mK).
Wherein, the thermal conductivity of described neck bush is greater than 20W/(mK).
Wherein, described neck bush is made up of aluminium oxide ceramics or aluminium nitride ceramics.
As another technical scheme, the present invention also provides a kind of plasma processing device, comprises reaction chamber, and described reaction chamber is used for carrying out PROCESS FOR TREATMENT to workpiece to be machined, and wherein, described reaction chamber adopts above-mentioned reaction chamber provided by the invention.
The present invention has following beneficial effect:
Reaction chamber provided by the invention, its neck bush around the sidewall of cavity, makes that neck bush is subject to the bombardment of ion in technical process and temperature raises in cavity; And because neck bush is by being fixed in cavity with the point cantact of connector, and there is between neck bush and the sidewall of cavity uniform gap, make neck bush in its process heated up, only by cavity sidewall radiations heat energy and outwards transmit the heat of seldom part by carrying out heat conducting mode between connector and the inwall of cavity; This makes the increasing extent of temperature of the sidewall of cavity in technical process very little, also makes the temperature of neck bush very high, and makes the temperature between each region of neck bush very even; Wherein, temperature between each region of neck bush very evenly makes neck bush be radiated to even heat on each region of the sidewall of cavity, and make the temperature gradient in each region of the sidewall of cavity less, thus the sidewall of cavity can be avoided to rupture because the temperature gradient between its regional is excessive, reduce the maintenance cost of reaction chamber; The temperature of neck bush is very high, can make accessory substance gasification attached to it, and then be discharged cavity, this reduces the accumulation of accessory substance in cavity, thus make the maintenance period of reaction chamber longer, improve the effective storage life of reaction chamber, and promote production capacity to a certain extent.In addition, neck bush is fixed in by the point cantact with connector in cavity, and its installation and removal are very simple, thus is convenient to safeguard.
Plasma processing device provided by the invention, it adopts above-mentioned reaction chamber provided by the invention, can make in technical process, to keep less temperature gradient between each region of the sidewall of its reaction chamber, thus the sidewall of its reaction chamber can be avoided to rupture because temperature gradient between each region is excessive, reduce the maintenance cost of its reaction chamber; And, the accumulation of accessory substance in the cavity of reaction chamber produced in technical process can also be reduced, thus make the maintenance period of reaction chamber longer, improve the effective storage life of reaction chamber, and promote the production capacity of plasma processing device to a certain extent.
Accompanying drawing explanation
Fig. 1 is the structural representation of the reaction chamber of the first plasma processing device existing;
Fig. 2 is the structural representation of the reaction chamber of existing the second plasma processing device;
The structural representation of the reaction chamber that Fig. 3 provides for the embodiment of the present invention;
Fig. 4 is the sidewall of neck bush around cavity and the structural representation of roof; And
The structural representation of Fig. 5 to be reaction chamber be PVD chamber.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, reaction chamber provided by the invention and plasma processing device are described in detail.
The structural representation of the reaction chamber that Fig. 3 provides for the embodiment of the present invention.Please refer to Fig. 3, this reaction chamber is etching cavity, it is for carrying out etching technics to workpiece to be machined, and it specifically comprises cavity 20, bogey 21, coil 22, radio-frequency power supply 23, grid bias power supply 24, neck bush 25, connector 26 and vacuum extractor (not shown).Wherein, comprise the first space 201 and second space 202, first space 201 in cavity 20 and be communicated with second space 202, and the sidewall 203 of second space 202 is made up of electrical insulating material; Cavity 20 is provided with air inlet 204 and exhaust outlet 205, and exhaust outlet 205 is connected with vacuum extractor; Bogey 21 is arranged in cavity 20, and it is for carrying workpiece to be machined 27; Grid bias power supply 24 is connected with bogey 21, for loading bias voltage to bogey 21; Coil 22 is at the outer ring of cavity 20 around the sidewall of cavity 20, and particularly, coil 22 is around the sidewall 203 of second space 202 in cavity 20; Radio-frequency power supply 23 is connected with coil 22, for loading radio-frequency power to coil 22; The sidewall of neck bush 25 in the inner side of cavity 20 around cavity 20, and between itself and the sidewall of cavity 20, there is uniform gap, particularly, neck bush 25 is around the sidewall 203 of second space 202 in cavity 20, and the gap between neck bush 25 and sidewall 203 is 1-2mm; Connector 26 is connected with the inwall of cavity 20, and by being fixed in cavity 20 with neck bush 25 point cantact by neck bush 25, particularly, connector 26 is connected with the sidewall 203 of second space 202 in cavity 20.
Carry out etching technics for above-mentioned reaction chamber to workpiece to be machined 27, its detailed process is: first, is extracted out by the gas in cavity 20 by vacuum extractor from exhaust outlet 205, makes to reach predetermined vacuum degree in cavity 20; Then, in cavity 20, process gas is passed into by air inlet 204; Load radio-frequency power by radio-frequency power supply 23 to coil 22, make coil 22 excite the above-mentioned process gas passed in cavity 20 to be plasma; And load bias voltage by grid bias power supply 24 to bogey 21, attract the Ions Bombardment in above-mentioned plasma be placed in workpiece to be machined 27 surface on bogey 21 or react with workpiece to be machined 27, thus go out corresponding figure in workpiece to be machined 27 surface etch.
In above process, due to neck bush 25 in cavity 20 around sidewall 203, make the ion in plasma can only bombard neck bush 25, and sidewall 203 cannot be bombarded; In the case, along with the increase of the quantity of the ion of bombardment neck bush 25, the temperature of neck bush 25 can progressively raise.And in the process raised in the temperature of neck bush 25, owing to being vacuum environment in cavity 20, neck bush 25 cannot by the outside transferring heat of mode of thermal convection, and this makes it only by carrying out outside transferring heat to sidewall 203 radiations heat energy outside it and by carrying out heat conducting mode between connector 26 and sidewall 203.But in above-mentioned two kinds of modes, owing to being point cantact between neck bush 25 and connector 26, the heat making neck bush 25 be passed on sidewall 203 through connector 26 is little, negligible in actual applications; And very low by the efficiency of radiant transfer heat, this makes neck bush 25 only can be passed on sidewall 203 by heat seldom partly; This makes the increasing extent of temperature of sidewall 203 in above-mentioned technical process very little; And, because neck bush 25 only can outwards transmit little heat, neck bush 25 can have very high temperature, simultaneously due to the conduction in heat each region in neck bush 25, on neck bush 25, the temperature in each region can be very even, this just makes it be radiated to even heat on each region of sidewall 203, thus makes the temperature gradient in each region on sidewall 203 less, so just avoids occurring that sidewall 203 is because of the excessive and situation about rupturing of the temperature gradient of its regional.In addition, in above-mentioned etching process, neck bush 25 has very high temperature, make to be attached to the accessory substance produced in the technical process on neck bush 25 can be easy to be vaporized, and then be discharged cavity 20, this reduces the accumulation of accessory substance in cavity 20, thus the maintenance period of reaction chamber can be made longer, improve the effective storage life of reaction chamber, and promote production capacity to a certain extent.
The reaction chamber that the present embodiment provides, its neck bush 25 around the sidewall of cavity 20, makes that neck bush 25 is subject to the bombardment of ion in technical process and temperature raises in cavity 20; And because neck bush 25 is by being fixed in cavity 20 with the point cantact of connector 26, and between the sidewall of neck bush 25 and cavity 20, there is uniform gap, make neck bush 25 in its process heated up, only by cavity 20 sidewall radiations heat energy and outwards transmit the heat of seldom part by carrying out heat conducting mode between connector 26 and the inwall of cavity 20; This makes the increasing extent of temperature of the sidewall of cavity 20 in technical process very little, also makes the temperature of neck bush 25 very high, and makes the temperature between each region of neck bush 25 very even; Wherein, temperature between each region of neck bush 25 very evenly makes neck bush 25 be radiated to even heat on each region of the sidewall of cavity 20, and make the temperature gradient in each region of the sidewall of cavity 20 less, thus can avoid the sidewall of cavity 20 because of the temperature gradient of its regional excessive and rupture, reduce the maintenance cost of reaction chamber; The temperature of neck bush 25 is very high, accessory substance gasification attached to it can be made, and then be discharged cavity 20, this reduces the accumulation of accessory substance in cavity 20, thus the maintenance period of reaction chamber can be made longer, improve the effective storage life of reaction chamber, and promote production capacity to a certain extent.In addition, neck bush 25 is fixed in cavity 20 by the point cantact with connector 26, and its installation and removal are very simple, thus is convenient to safeguard.
Easy understand, in the present embodiment, the thickness of neck bush 25 is less, and it is less on the impact of the coupling efficiency of coil 22 activated plasma.In actual applications, the thickness of neck bush 25 can be 3-5mm, neck bush 25 can be made so little as much as possible on the impact of the coupling efficiency of coil 22, and make neck bush 25 have sufficiently structural strength.
In technical process, neck bush 25 has very high temperature, and its temperature can reach hundreds of degree Celsius, and this just requires that neck bush 25 normally can work in hot environment; Particularly, in the present embodiment, neck bush 25 is made up of the exotic material such as aluminium oxide ceramics, aluminium nitride ceramics; Because aluminium oxide ceramics and aluminium nitride ceramics can bear the high temperature of more than 1000 DEG C, the neck bush 25 adopting above-mentioned aluminium oxide ceramics and aluminium nitride ceramics to make normally can work and not damaged in technical process.
In the present embodiment, connector 26 is heat insulator, its thermal conductivity is less than 0.2W/(mK), the heat that neck bush 25 can be made like this to conduct on the inwall of cavity 20 through connector 26 is few as much as possible, thus the outside heat transmitted of neck bush 25 can be reduced, and avoid the temperature in the region be connected with connector 26 made on cavity 20 apparently higher than the temperature in other regions of cavity 20, cavity 20 forms larger temperature gradient.
In the present embodiment, neck bush 25 is the good conductor of heat, its thermal conductivity is greater than 20W/(mK), in the case, the conduction of heat on neck bush 25 is faster, thus in technical process, can make the more uniform temperature of neck bush 25 regional, and make the heat of its radiation on cavity 20 sidewall regional evenly, thus the temperature gradient on the sidewall reducing cavity 20 further between each region.
It should be noted that, in the present embodiment, the sidewall of neck bush 25 in the inner side of cavity 20 around cavity 20, but the present invention is not limited to this, in actual applications, neck bush 25 can also be made around the more multizone on cavity 20 inwall; Such as, as shown in Figure 4, neck bush 25 in the inner side of cavity 20 around the sidewall of cavity 20 and roof, and between the sidewall of itself and cavity 20 and roof, there is gap equably, in the case, the temperature gradient that neck bush 25 can make the sidewall of cavity 20 and roof keep less in technical process, thus prevent the sidewall of cavity 20 and roof from rupturing because its temperature gradient is excessive; Particularly, the gap between the sidewall of neck bush 25 and cavity 20 and roof can be 1-2mm.
Also it should be noted that, in the present embodiment, reaction chamber is etching cavity, but the present invention is not limited to this, and in actual applications, reaction chamber can also be PVD(PhysicalVapor Deposition, physical vapour deposition (PVD)) chamber.In the case, as shown in Figure 5, reaction chamber comprises cavity 20, bogey 21, coil 22, radio-frequency power supply 23, neck bush 25, connector 26, target 28 and grid bias power supply 29; Wherein, bogey 21 is arranged in cavity, and it is for carrying workpiece to be machined 27; Target 28 is located at the top of cavity 20; Grid bias power supply 29 is connected with target 28, for loading bias voltage to target 28; Coil 22 at the outer ring of cavity 20 around the sidewall of cavity 20; Radio-frequency power supply 23 is connected with coil 22, for loading radio-frequency power to coil 22; The sidewall of neck bush 25 in the inner side of cavity 20 around cavity 20, and between itself and the sidewall of cavity 20, there is uniform gap; Connector 26 is connected with the inwall of cavity 20, and by neck bush 25 being fixed in cavity 20 with neck bush 25 point cantact.In actual applications, above-mentioned reaction chamber can by sputtering at workpiece to be machined surface deposition film, and its detailed process is: in cavity 20, pass into process gas; Then, load radio-frequency power by radio-frequency power supply 23 to coil 22, make coil 22 excite the above-mentioned process gas passed in cavity 20 to be plasma; Grid bias power supply 29 loads bias voltage to target 28, attract the Ions Bombardment target 28 in above-mentioned plasma, the target atom on target 28 surface or molecule are departed from from target 28 surface, and are deposited on the surface of workpiece to be machined, thus on workpiece to be machined deposit film.In addition, reaction chamber can also be CVD(ChemicalVapor Deposition, chemical vapour deposition (CVD)) chamber.
As another technical scheme, the embodiment of the present invention also provides a kind of plasma processing device, and it comprises reaction chamber, and this reaction chamber is used for carrying out PROCESS FOR TREATMENT to workpiece to be machined, further, this reaction chamber reaction chamber of adopting the above embodiment of the present invention to provide.
The plasma processing device that the embodiment of the present invention provides, its reaction chamber adopting the above embodiment of the present invention to provide, can make each region of the sidewall of its reaction chamber in technical process, keep less temperature gradient, thus the sidewall of its reaction chamber can be avoided to rupture because temperature gradient between each region is excessive, reduce the maintenance cost of its reaction chamber; And, the accumulation of accessory substance in the cavity of reaction chamber produced in technical process can also be reduced, thus make the maintenance period of reaction chamber longer, improve the effective storage life of reaction chamber, and promote the production capacity of plasma processing device to a certain extent.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a reaction chamber, comprise cavity, coil, described coil at the outer ring of cavity around the sidewall of cavity, it is characterized in that, described reaction chamber also comprises neck bush and connector, the sidewall of described neck bush in the inner side of cavity around cavity, and there is between itself and the sidewall of cavity uniform gap;
Described connector is connected with the inwall of described cavity, and by described neck bush being fixed in described cavity with described neck bush point cantact.
2. reaction chamber according to claim 1, is characterized in that, described neck bush around the sidewall of described cavity and roof, and has uniform gap between the sidewall of itself and cavity and roof in the inner side of cavity.
3. reaction chamber according to claim 1, is characterized in that, the thickness of described neck bush is 3-5mm.
4. reaction chamber according to claim 1, is characterized in that, the gap between described neck bush and the sidewall of cavity is 1-2mm.
5. reaction chamber according to claim 2, is characterized in that, the gap between the sidewall of described neck bush and cavity and roof is 1-2mm.
6. reaction chamber according to claim 1, is characterized in that, described neck bush is made up of the material of high temperature resistant 1000 DEG C.
7. reaction chamber according to claim 1, is characterized in that, the thermal conductivity of described connector is less than 0.2W/(mK).
8. reaction chamber according to claim 1, is characterized in that, the thermal conductivity of described neck bush is greater than 20W/(mK).
9. the reaction chamber according to claim 6 or 8, is characterized in that, described neck bush is made up of aluminium oxide ceramics or aluminium nitride ceramics.
10. a plasma processing device, comprises reaction chamber, and described reaction chamber is used for carrying out PROCESS FOR TREATMENT to workpiece to be machined, it is characterized in that, described reaction chamber adopts the reaction chamber described in claim 1-9 any one.
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| CN201310700822.6A CN104733273B (en) | 2013-12-18 | 2013-12-18 | A kind of reaction chamber and plasma processing device |
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| CN201310700822.6A CN104733273B (en) | 2013-12-18 | 2013-12-18 | A kind of reaction chamber and plasma processing device |
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| CN104733273A true CN104733273A (en) | 2015-06-24 |
| CN104733273B CN104733273B (en) | 2017-06-06 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7223321B1 (en) * | 2002-08-30 | 2007-05-29 | Lam Research Corporation | Faraday shield disposed within an inductively coupled plasma etching apparatus |
| CN101196750A (en) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| KR100855323B1 (en) * | 2006-12-27 | 2008-09-04 | 세메스 주식회사 | Processing chamber and apparatus of treating substrate using plasma |
| US20090020228A1 (en) * | 2007-07-18 | 2009-01-22 | Tokyo Electron Limited | Plasma processing apparatus and plasma generation chamber |
| CN102573429A (en) * | 2010-12-09 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding apparatus, processing method and device, semiconductor device |
| CN105190837A (en) * | 2013-05-09 | 2015-12-23 | 马特森技术有限公司 | System and method for protection of vacuum seals in plasma processing systems |
-
2013
- 2013-12-18 CN CN201310700822.6A patent/CN104733273B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7223321B1 (en) * | 2002-08-30 | 2007-05-29 | Lam Research Corporation | Faraday shield disposed within an inductively coupled plasma etching apparatus |
| CN101196750A (en) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| KR100855323B1 (en) * | 2006-12-27 | 2008-09-04 | 세메스 주식회사 | Processing chamber and apparatus of treating substrate using plasma |
| US20090020228A1 (en) * | 2007-07-18 | 2009-01-22 | Tokyo Electron Limited | Plasma processing apparatus and plasma generation chamber |
| CN102573429A (en) * | 2010-12-09 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding apparatus, processing method and device, semiconductor device |
| CN105190837A (en) * | 2013-05-09 | 2015-12-23 | 马特森技术有限公司 | System and method for protection of vacuum seals in plasma processing systems |
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| CN104733273B (en) | 2017-06-06 |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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