KR100739652B1 - Organic light emitting diode display device and method for fabricating thereof - Google Patents

Abstract

An organic light emitting diode display device and a method for fabricating the same are provided to reduce short failure due to particles existing on an overlapped area, by reducing the overlapped area of a first common voltage line and a data line. A semiconductor layer is formed on a driving circuit board. A gate insulator covers the semiconductor layer. A first common voltage line(50) is formed on the gate insulator along the first direction and is overlapped with the semiconductor layer, and is connected to a gate line. An interlayer insulation film(70) covers the first common voltage line. A data line(60) is formed on the interlayer insulation film along the second direction crossing with the first common voltage line. A second common voltage line(80) is formed on the interlayer insulation film along the second direction in parallel with the data line, and is connected to a source/drain electrode electrically. An organic light emitting diode comprises a first pixel electrode, a second pixel electrode and an organic film arranged between the first and second pixel electrodes. The first common voltage line comprises a laser repair part on a crossing region with the data line.

Description

Organic electroluminescent display and manufacturing method thereof {ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD FOR FABRICATING THEREOF}

1 is a plan view illustrating a semiconductor layer formed on a driving circuit board in an organic light emitting display device according to an exemplary embodiment of the present invention.

FIG. 2 is a plan view illustrating a state in which a first common power line is formed on the driving circuit board of FIG. 1.

3 is a partial cross-sectional view taken along line "III-III" of FIG.

4 is a plan view illustrating a state in which a data line and a second common power line are formed on the driving circuit board of FIG. 1.

FIG. 5 is a partial cross-sectional view of "V-V" of FIG. 4.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, to an organic light emitting display device capable of effectively repairing dark spots or dark vertical lines caused by a short circuit between upper and lower interconnections. It relates to a production method thereof.

Recently, various flat panel displays have been developed to reduce weight and volume, which are disadvantages of cathode ray tubes. Such flat panel displays include liquid crystal displays (LCDs), field emission displays (FEDs), plasma display panels (PDPs), and organic light emitting diodes (Organic Light Emitting Diodes). Display Device).

The organic light emitting display device is a self-luminous display device that electrically excites an organic compound to emit light. The organic light emitting display device may display an image by voltage driving or current driving N × M organic light emitting devices.

The organic light emitting diode has a diode characteristic and is also called an organic light emitting diode, which is composed of an anode electrode as a hole injection electrode, an organic thin film as a light emitting layer, and a cathode electrode as an electron injection electrode. Holes and electrons are injected into the organic thin film to emit light when an exciton in which holes and electrons are combined falls from an excited state to a ground state.

In general, the organic light emitting display device includes a driving circuit board on which a driving circuit unit is formed. A buffer film is provided on the driving circuit board, and a driving circuit part including a plurality of thin film transistors (hereinafter, referred to as TFTs) is formed on the buffer film.

The driving circuit unit includes at least two TFTs for each of three (red, green, blue) sub pixels constituting one organic light emitting cell.

The first TFT, which is one of the two TFTs, serves as a switching TFT that selects an element to emit light from among a plurality of organic light emitting cells, and the second TFT, which is the other, emits light from the light emitting layer of the selected organic light emitting cell. It acts as a driving TFT for applying a driving power supply.

Typically, the TFT includes a semiconductor layer having a source region, a drain region, and a channel region formed therein, a gate insulating layer covering the semiconductor layer, a first common power line ELVDD introduced into the semiconductor region and connected to a gate wiring; An interlayer insulating film covering a first common power supply line, a data line formed on the interlayer insulating film in a direction crossing the gate wiring, and a data line adjacent to the data line and electrically connected to a source / drain electrode; It includes two common power lines.

However, since the data line and the first common power supply line are stacked with the interlayer insulating film interposed therebetween, the short circuit may be generated by the particles.

When a short is generated as described above, dark spots or dark vertical lines are generated.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide an organic light emitting display device and a method of manufacturing the same, which can effectively perform laser repair when a short circuit occurs between wirings disposed above and below.

In order to achieve the above object, the present invention provides a semiconductor layer formed on a driving circuit board, a gate insulating film covering the semiconductor layer, overlapping the semiconductor region, and being formed in a first direction on the gate insulating film, A first common power line to be connected, an interlayer insulating layer covering the first common power line, a data line formed on the interlayer insulating layer in a second direction crossing the first common power line, and a second parallel to the data line Organic electroluminescent device comprising a second common power supply line formed on the interlayer insulating film in a direction and electrically connected to a source / drain electrode, and a first pixel electrode, a second pixel electrode, and an organic film disposed between the electrodes It provides an organic electroluminescent display comprising a.

According to an embodiment of the present invention, the first common power line includes a laser repair unit in an area crossing the data line.

The laser repair unit may include a plurality of hole patterns formed at a predetermined pitch along the second direction, and a bridge provided between the hole patterns, wherein the first width of the hole pattern is a first width of the data line. It may be formed larger or smaller than the directional width.

The second width of the bridge may be greater than or smaller than the second width of the hole pattern.

An organic light emitting display device according to an embodiment of the present invention is a display device driven by an active matrix method, and a driving circuit unit and an organic light emitting device are provided on a driving circuit board.

The driving circuit unit may include components such as a thin film transistor, a scan line, a data line, a common power line, and a storage capacitor, and the organic electroluminescent element may include a first pixel electrode and a second pixel electrode.

The first pixel electrode has a function of injecting holes and is formed of a first conductive transparent electrode. In addition, the first pixel electrode may further include a conductive reflective film according to the emission direction of the organic electroluminescent device.

The conductive reflective film is for reflecting light generated from the organic electroluminescent device, or to improve a work function or electrical conductivity between the conductive transparent electrodes, and is typically aluminum (Al). Or it may be made of any one of aluminum alloy (Al-alloy), silver (Ag) or silver alloy (Ag-alloy), gold (Au) or gold alloy (Au-alloy).

In addition, a second conductive transparent electrode may be additionally formed on the conductive reflective film. The second conductive transparent electrode may suppress metal oxidation of the conductive reflective film, and may further function to improve a work function of the hole injection layer and the conductive reflective film.

The first conductive transparent electrode and the second conductive transparent electrode may be formed of indium thin oxide (ITO), indium zinc oxide (IZO), or the like.

The organic electroluminescent device can further form an organic film between the first pixel electrode and the second pixel electrode, and according to the molecular weight of the organic material forming the organic film, a small molecule organic light emitting diode (Small Molecule OLED) and a polymer organic electroluminescence It is divided into device (Polymer OLED).

Among these, the low molecular weight organic EL device may be manufactured by any one of a vacuum thermal deposition method, a vapor deposition method, and a laser induced thermal imaging method (LITI).

In fact, the organic film used in the low molecular organic EL device has a multi-layered thin film structure in which an organic layer for efficiently transferring carriers such as holes and electrons to the light emitting layer is stacked on the top and bottom of the light emitting layer.

For example, the organic layer may be formed of a multilayer thin film structure such as a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer that are sequentially stacked on the first pixel electrode of the organic EL device. Can be.

The low molecular weight material forming the organic film of the multilayer thin film structure can be classified into a hole injection and transfer material, a hole blocking material, an electron transfer material, and a light emitting material according to its function.

According to the light emitting mechanism, the fluorescent material derived from the singlet excitons and the phosphorescent material derived from the triplet excitons can be classified into blue, red, yellow, and orange light emitting materials according to the emission color.

The low molecular weight light emitting material can be classified into a host material and a dopant material in terms of its functions, and can be classified into an organic host material, an organic metal host material, an organic dopant material, and an organic metal dopant material by combining the molecular structure. Can be.

Generally, the host material or dopant material can shine with only these materials. However, in this case, the efficiency and brightness is very low, and as each molecule is in close proximity, it is not preferable because the excimer characteristic, which is not a unique characteristic of each molecule, appears together.

Of course, the organic film structure and manufacturing process of the organic EL device differ depending on the low molecular weight material.

The thin film transistor of the driving circuit unit may be classified into an inorganic thin film transistor and an organic thin film transistor according to a crystalline material.

The inorganic thin film transistor may be formed between an amorphous thin film transistor (a-Si TFT), an amorphous thin film transistor (Poly-Si TFT), and the crystalline of the amorphous thin film transistor according to the degree of crystallinity. It can be divided into crystalline transistors.

The amorphous thin film transistor has a low electron mobility and low reliability, but may form a thin film transistor without requiring a separate crystallization process, and may use a conventional thin film liquid crystal display (TFT-LCD) process.

In addition, the poly Si TFT requires an additional process and equipment necessary for crystallization, but has an advantage of high electron mobility and high reliability compared to the amorphous thin film transistor.

In addition, the micro thin film crystalline transistor has a higher electron mobility than the amorphous thin film transistor, but does not require an additional process compared to the polycrystalline thin film transistor, and thus research and development have been actively conducted recently.

The structures of the first pixel electrode, the organic film, and the second pixel electrode constituting the organic electroluminescent element differ in structure depending on the amorphous thin film transistor and the polycrystalline thin film transistor.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In describing the following embodiments, when a portion such as a layer, a film, etc. is formed "on" of another portion, it is not only when it is "just above" the other portion but also when there is another portion in the middle. Include.

1 to 5 are diagrams for illustrating a schematic configuration of an organic light emitting display device according to an embodiment of the present invention. FIG. 1 is a plan view showing a state in which a semiconductor layer is formed on a driving circuit board. FIG. 3 is a plan view showing a state where a first common power supply line is formed on a driving circuit board, and FIG.

4 is a plan view illustrating a state in which a data line and a second common power supply line are formed on a driving circuit board, and FIG. 5 is a partial cross-sectional view of "V-V" of FIG. 4.

The buffer film 20 is formed on the driving circuit board 10, and the semiconductor layer 20 is formed on the buffer film 20. The semiconductor layer 20 may be formed of a polycrystalline silicon layer having a source region, a drain region, and a channel region.

As the driving circuit board 10, a glass substrate made of a transparent material or a resin substrate made of an intransparent material may be used, and a thin metal substrate capable of bending may be used.

The gate insulating layer 40 is formed on the semiconductor layer 30, and the first common power line 50 is formed on the gate insulating layer 40 so as to overlap the semiconductor layer 30.

The first common power line 50 is formed in a first direction (X-X 'direction) and is electrically connected to the gate wiring.

Here, the first common power line 50 includes a laser repair unit 52. In the embodiment of the present invention, the laser repair unit 52 is along the second direction (Y-Y 'direction). A plurality of hole patterns 52a formed at a constant pitch and a bridge 52b provided between the hole patterns 52a are included.

The hole pattern 52a may have a first width W1 greater than the first width W2 of the data line 60. The second width W3 of the bridge 52b may be smaller than the second width W4 of the hole pattern 52a.

Although not shown, the second width W3 of the bridge 52b may be larger than the second width W4 of the hole pattern 52a.

In addition, the hole pattern 52a may have a first width W1 smaller than the first width W2 of the data line 60, and in this case, the second direction of the bridge 52b may also be formed. The width W3 may be larger or smaller than the second width W4 of the hole pattern 52a.

In addition, an interlayer insulating layer 70 is formed on the first common power line 50.

In this case, the interlayer insulating film 70 is also formed on the gate insulating film 40 exposed by the hole patterns 52a, and the data line 60 and the second common power supply line 80 are formed on the interlayer insulating film 70. It is formed in a second direction (Y-Y 'direction).

The second common power line 80 may be electrically connected to a source / drain electrode (not shown).

And although not shown, the organic electroluminescent element is formed on the said drive circuit part.

According to the organic light emitting display having the above configuration, since the first common power supply line 50 includes the hole patterns 52a, an area where the first common power supply line 50 and the data line 60 overlap each other The sum of the areas of the hole patterns 52a is reduced compared to the related art.

Therefore, it is possible to reduce the possibility of particles shorting the first common power supply line 50 and the data line 60.

When the particles remain on the bridge 52b and the first common power supply line 50 and the data line 60 are shorted due to the particles, the bridge 52b is disconnected by using a laser, thereby causing a dark spot. Alternatively, the occurrence of the dark vertical line can be repaired.

The organic light emitting display device having the above configuration can be manufactured according to the following manufacturing method.

First, the semiconductor layer 30 is formed on the buffer film 20 of the driving circuit board 10. Here, the semiconductor layer 30 may be formed by forming an amorphous silicon film and then performing crystallization to form a polysilicon film, patterning the polysilicon film, and then performing an ion implantation process.

According to this method, the semiconductor layer 30 having a source region and a drain region and a channel region therebetween can be formed.

After forming the semiconductor layer 30, the gate insulating layer 40 is formed, and the first common power line has a shape including a plurality of hole patterns 52a and a laser repair portion 52 formed of a bridge 52b. 50 is formed on the gate insulating film 40.

In this case, the first common power line 50 may be formed in a first direction (X-X 'direction) so as to overlap the semiconductor layer 30.

In addition, the hole pattern 52a may have a first direction width W1 greater than or smaller than the first direction width W2 of the data line 60, and may be formed in a second direction of the bridge 52b. The width W3 may be formed smaller or larger than the second width W4 of the hole pattern 52a.

Subsequently, an interlayer insulating film 70 covering the first common power line 50 is formed, and the interlayer insulating film 70 is intersected with the first common power line 50 in a second direction (Y-Y 'direction). ) To form a data line 60 and a second common power supply line 80.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the scope of the invention.

As described above, the organic light emitting display according to the exemplary embodiment of the present invention includes a laser repair unit in a region where the first common power line crosses the data line. Moreover, the said laser repair part is comprised by the several hole pattern and bridge.

Therefore, since the overlap area of the first common power supply line and the data line is reduced by the area of the hole pattern, short defects due to particles existing on the overlap area can be reduced.

In addition, when dark spots or dark vertical lines are generated due to particles present on the bridge, repair is possible by disconnecting the bridge using a laser.

Claims (15)

A semiconductor layer formed on the driving circuit board; A gate insulating film covering the semiconductor layer; A first common power line overlapping the semiconductor region and formed in the first direction on the gate insulating layer and connected to the gate line; An interlayer insulating layer covering the first common power line; A data line formed on the interlayer insulating film in a second direction crossing the first common power line; A second common power line formed on the interlayer insulating film in a second direction parallel to the data line and electrically connected to a source / drain electrode; And An organic electroluminescent element comprising a first pixel electrode and a second pixel electrode and an organic film disposed between the electrodes Including; And the first common power supply line includes a laser repair unit at an intersection with the data line. The method of claim 1, The laser repair unit may include a plurality of hole patterns formed at a predetermined pitch along the second direction, and a bridge provided between the hole patterns. The method of claim 2, And a first width of the hole pattern greater than a first width of the data line. The method of claim 3, wherein And a second width of the bridge is greater than a second width of the hole pattern. The method of claim 3, wherein And a second width in the second direction of the bridge is smaller than a width in the second direction of the hole pattern. The method of claim 2, And the first width of the hole pattern is smaller than the first width of the data line. The method of claim 6, And the second width of the bridge is greater than the second width of the hole pattern. The method of claim 6, And a second width in the second direction of the bridge is smaller than a width in the second direction of the hole pattern. Forming a semiconductor layer on the drive circuit board; Forming a gate insulating film covering the semiconductor layer; Forming a first common power line in a first direction on the gate insulating layer to overlap the semiconductor region; Forming an interlayer insulating layer covering the first common power line; Forming a data line and a second common power line on the interlayer insulating layer in a second direction crossing the first common power line; Including; In the forming of the first common power line, a laser repair part including a plurality of hole patterns formed at a predetermined pitch along the second direction and a bridge provided between the hole patterns may be formed at an intersection area with the data line. Forming method of manufacturing an organic light emitting display device. The method of claim 9, And forming a first width of the hole pattern larger than a first width of the data line. The method of claim 10, And forming a second width of the bridge larger than a second width of the hole pattern. The method of claim 10, And forming a width in the second direction of the bridge smaller than a width in the second direction of the hole pattern. The method of claim 9, And forming a first width of the hole pattern smaller than a first width of the data line. The method of claim 13, And forming a second width of the bridge larger than a second width of the hole pattern. The method of claim 13, And forming a width in the second direction of the bridge smaller than a width in the second direction of the hole pattern.

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