KR100738168B1 - Liquid crystal display device using thin film transistor and manufacturing method thereof - Google Patents

Abstract

In a liquid crystal display device and a manufacturing method using the thin film transistor, the production process is simplified, and the increase in the wiring resistance of the source wiring and the gate wiring is prevented. The gate electrode 13, the source wiring 201 ′, and the pixel contact layer 21 ′ are formed in the opening portion of the first light transmissive photosensitive resin 12 formed on the insulating substrate 11. The gate insulating film 14, the semiconductor layer 15, the ohmic contact layer (n + semiconductor layer) 16, and the protective film 17 are formed on these. In addition, the source electrode 19, the drain electrode 19 ′, and the pixel electrode 21 are formed in the opening portion of the second light transmissive photosensitive resin 12 ′. The cross-section connection wiring formed in the opening of the second light transmissive photosensitive resin is a sintered silver formed by firing an ink containing silver fine particles coated with ink jet in the same manner as the source wiring or the gate wiring.

Insulated substrate, light transmissive photosensitive resin, inkjet coating, auxiliary capacitance wiring, photomask

Description

Liquid crystal display using thin film transistor and manufacturing method therefor {LIQUID CRYSTAL DISPLAY DEVICE USING THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF}

1 is a schematic view of a liquid crystal display device according to the present invention;

2 is a cross-sectional view of a thin film transistor according to the present invention.

3 is a gate-source wiring process diagram of the thin film transistor shown in FIG. 2.

4 is a process chart of formation of a thin film transistor subsequent to FIG. 3;

FIG. 5 is a process chart of formation of a thin film transistor following FIG. 4. FIG.

FIG. 6 is a pixel formation process diagram following FIG. 5. FIG.

7 is a plan view of the thin film transistor formed in FIGS. 3 to 6.

8 is a cross-sectional view of another thin film transistor according to the present invention;

9 is a process chart for forming the thin film transistor shown in FIG. 8.

10 is a process chart of formation of a thin film transistor subsequent to FIG. 9;

FIG. 11 is a process chart of formation of a thin film transistor following FIG. 10. FIG.

12 is a plan view of a thin film transistor subsequent to FIG. 11 and a plan view of the thin film transistor;

13 is a cross-sectional view of another thin film transistor according to the present invention.

14 is a process chart for forming the thin film transistor shown in FIG. 13.

15 is a plan view of a thin film transistor subsequent to FIG. 14 and a plan view of the thin film transistor;

<Explanation of symbols for the main parts of the drawings>

10: thin film transistor

11: insulated substrate

12: 1st light transmissive photosensitive resin

12 ': second light transmitting photosensitive resin

13: gate electrode

14: gate insulating film

15: semiconductor layer (amorphous silicon)

16: ohmic contact layer (n + semiconductor layer)

17: shield

19: source electrode

19 ': drain electrode

20: liquid crystal element

21: pixel electrode

21 ': pixel contact layer

22: common electrode

23: auxiliary capacity

24: auxiliary capacitance wiring

24 ': auxiliary capacitance wiring

40: thin film transistor portion

41: cross section

42: half exposure part

50: resist

60: cross connection wiring

100: scan line driving circuit

101: scanning line

101 ': gate wiring

110: resist

200: data line driving circuit

201: data line

201 ': Source wiring

[Patent Document 1] Japanese Patent Application Laid-Open No. 2003-318193

[Patent Document 2] Japanese Patent Application Laid-Open No. 9-265113

The present invention relates to a liquid crystal display device using a thin film transistor having a gate electrode and a source / drain electrode formed by inkjet coating, and a method of manufacturing the same.

The thin film transistor (TFT) used in the active matrix liquid crystal display device includes a gate electrode made of a metal film such as chromium, a gate insulating film made of SiN _x , a semiconductor layer made of amorphous silicon, and a substrate on a substrate; An ohmic contact layer doped with an impurity such as phosphorus, a source electrode and a drain electrode made of a metal film such as chromium, and a protective film are stacked in this order.

The thin film transistor is manufactured by forming a plurality of thin films on a glass substrate and subjecting the thin films to a photolithography step. However, the formation and patterning of thin films requires the use of expensive, low-throughput, and complex vacuum devices, such as sputtering devices, CVD devices, and etching devices, which results in a very complicated process and increases manufacturing costs. do.

Therefore, Patent Document 1 describes the manufacture of a thin film transistor in an atmospheric pressure whenever possible. In Patent Document 1, a gate electrode film of a thin film transistor is formed by an ink jet method using a liquid material containing a conductive material, and a source region and a drain region of the thin film transistor are formed of a liquid containing a semiconductor material. Forming by the inkjet method using a material is described.

In addition, Patent Literature 2 discloses a gate bus line and a source bus line formed on the same layer as a means for reducing the photolithography process and simplifying the production process. A method of crosslinking a source bus line cut at is described.

In the production of the thin film transistor described in Patent Document 1, although the number of vacuum devices is reduced by the inkjet method to reduce the production process, the number of production processes is still large, so that the thin film transistor can be manufactured at low cost and high throughput. none.

In the method described in Patent Document 2, a transparent electrode material having a high specific resistance (specific resistance = 100 to 1000 µPa · cm) such as indium tin oxide (ITO) is used for the pixel electrode. Large resistance occurs at the crosslinked portion.

Usually, although a metal with a specific resistance of <3 mu Ω · cm is used for the bus line, even if the length of the crosslinked portion is designed to be about 5% to 1% of the length of the bus line, the resistance value of the bus line is 1.3 times to 3 times. In addition, it is impossible to design the length of the crosslinking portion to 5% or less as a practical problem. In addition, contact resistance (contact resistance) is generated between the metal of the bus line having a low specific resistance and ITO having a high specific resistance, thereby further increasing the contact resistance at the crosslinked portion.

Even in the large, high-precision panel, which has become the mainstream of future LCD-TVs, the method of increasing the wiring resistance even by 1% cannot be used.

Accordingly, an object of the present invention is to simplify a production process and to reduce wiring resistance without increasing the wiring resistance of the source wiring and the gate wiring in the liquid crystal display device and the manufacturing method using the thin film transistor.

In the opening of the first light-transmissive photosensitive resin, an inkjet method using ink containing metal fine particles is used to simultaneously form the source wiring and the gate wiring of the thin film transistor and the storage capacitor wiring except the pixel contact layer and the cross-connection wiring. .

In the opening of the second light transmissive photosensitive resin, the source electrode and the drain electrode, the pixel electrode, and the cross section connection wiring of the thin film transistor are simultaneously formed with separate inks by the ink jet method.

In particular, the source wiring or the gate wiring is connected to the cross-connection wiring using an ink containing metal fine particles of the same kind as the source wiring or the gate wiring.

EMBODIMENT OF THE INVENTION Hereinafter, the Example of this invention is described using drawing.

Example 1

1 is a schematic diagram of an active matrix type liquid crystal display device using a thin film transistor according to the present invention, corresponding to a scan line 101 selected by the scan line driver circuit 100, and from the data line driver circuit 200 to a data line ( Data (voltage) is supplied to the thin film transistor 10 through 201.

The thin film transistor 10 is provided at the intersection of the scan line 101 and the data line 201, and the scan line 101 is connected to the gate electrode 13 of the thin film transistor 10, and the thin film transistor 10 is provided. The data line 201 is connected to the source electrode 19.

The drain electrode 19 ′ of the thin film transistor 10 is connected to the pixel electrode 21 of the liquid crystal element 20, and the liquid crystal element 20 is between the pixel electrode 21 and the common electrode 22. It is driven by data (voltage) supplied to the pixel electrode 21. In addition, a storage capacitor 23 for temporarily holding data (voltage) is connected between the drain electrode 19 'and the storage capacitor wiring 24.

FIG. 2 is a cross-sectional view of the thin film transistor 10 arranged in the matrix form shown in FIG. 1, wherein the source wiring 201 ', the gate electrode 13, and the pixel contact layer 21' contain ink containing metal fine particles. The inkjet coating using the inkjet coating film is used to form an opening of the first light transmissive photosensitive resin 12 formed on the insulating substrate (glass substrate) 11.

In addition, the source electrode 19, the drain electrode 19 ', and the pixel electrode 21 apply an ink jet using ink containing metal fine particles to the opening of the second light transmissive photosensitive resin 12' formed last. Is formed by.

Reference numeral 14 denotes a gate insulating film, reference numeral 15 denotes a semiconductor layer, reference numeral 16 denotes an n + semiconductor layer (omic contact layer), and reference numeral 17 denotes a protective film.

FIG. 3 is a gate-source wiring process of the thin film transistor 10 shown in FIG. 2. First, the first light transmissive photosensitive resin 12 is coated on the cleaned insulating substrate 11, and FIG. ), A pattern portion (gate wiring 101 ', source wiring 201', storage capacitor wiring 24 ', gate electrode 13 and pixel contact layer 21') is formed. 1 It exposes, develops, and bakes using a photomask.

3A and 3C are cross-sectional views of the broken lines A-A 'of the thin film transistor section and the broken lines B-B' and C-C 'of the cross section of the wiring. In addition, the broken line B-B 'of the cross part of wiring used the gate wiring 101' as a continuous wiring, and made the wiring which interrupted the source wiring 201 ', but it was the wiring which interrupted the gate wiring 101'. The source wiring 201 'may be connected to each other. The cross section in this case is the same as the cross section of the broken line C-C '.

Next, as shown in Fig. 3B, the water-repellent treatment other than the pattern portion and the hydrophilic treatment of the pattern portion cause the ink containing metal fine particles (silver fine particles) to be concentrated on the pattern portion by inkjet coating. Apply. Thereafter, the ink containing the metal fine particles in the pattern portion is fired. The storage capacitor wiring 24 ′ is inkjet coated with a transparent conductor (ITO).

Finally, as shown in FIG.3 (c), the ink is apply | coated by inkjet coating similarly as the cap metal 30 which consists of Ni in a pattern part, and is fired.

FIG. 4 is a step of forming a thin film transistor subsequent to FIG. 3, and as shown in FIG. 4A, a gate insulating film 14 made of SiN _x and a semiconductor film (semiconductor layer) of a-Si ( 15), an n + semiconductor film (omic contact layer) 16 is formed. In addition, broken line A-A 'shows sectional drawing of the thin film transistor part 40 shown to FIG. 4B, and broken line BB' and C-C 'show sectional drawing of the cross part 41 of wiring.

Next, a resist is applied to the resist using an island pattern mask for forming the thin film transistor section 40 and the cross section 41 of the wiring in an island shape as shown in FIG. 4B. Exposure and development. The gate electrode 13 of the thin film transistor is half exposed 42. 4C is a cross-sectional view after the development of the resist. 4A and 4D are cross-sectional views taken along the broken line A-A 'of the thin film transistor section 40 and broken lines B-B' and C-C 'of the cross section 41 of the wiring.

Finally, as shown in Fig. 4D, the n + semiconductor film 16 and the semiconductor film 15 are dry etched.

5 is a step of forming a thin film transistor subsequent to FIG. 4, and as shown in a plan view of FIG. 5A and a cross-sectional view of FIG. 5B, a thin film transistor portion 40 formed in an island shape and The resist 50 is formed around the cross portion 41 of the wiring by ink jet coating. Further, cross-sectional views of the broken line A-A 'of the thin film transistor section 40 and the broken lines BB' and C-C 'of the cross section 41 of the wiring are shown in FIGS. 5B, 5C, and 5D. Illustrated.

Next, as shown in FIG. 5C, while the gate insulating film 14 is dry etched (cap-assisted) by CF ₄ / O ₂ , the half exposure portion 42 is removed to remove the SF _6. Dry etching of the n + semiconductor film 16 in the half exposure section 42 is performed by / Cl ₂ .

Finally, as illustrated in Figure 5 (d), and peeling off the resist 50 to form a protective film 17 made of SiN _x.

FIG. 6 is a pixel forming process following FIG. 5. First, the second light transmitting photosensitive resin 12 ′ is applied, and as shown in FIG. 6A, the pattern portion (gate wiring 101 ′), Exposure, development, and firing are carried out using a second photomask in which the source wiring 201 ', the thin film transistor portion 40, and the wiring cross portion 41 are formed. Further, cross-sectional views of the broken line A-A 'of the thin film transistor section 40 and the broken lines BB' and C-C 'of the cross section 41 of the wiring are shown in FIGS. 6B, 6C, and 6D. Illustrated.

Next, as shown in Fig. 6C, after the protective film 17 and the cap metal 30 are etched, as shown in Fig. 6D, the source electrode is applied by ink jet coating. (19), the drain electrode 19 ', the pixel electrode 21, and the cross section connection wiring 60 are formed and fired. The source electrode 19 and the drain electrode 19 'are made of a low resistance barrier metal, the pixel electrode 21 is made of a transparent conductor (ITO), and the cross section connection wiring 60 is made of silver fine particles. Use This top view is shown in FIG.

FIG. 7 is a plan view of FIG. 6D, which is a plan view when the thin film transistor 10 illustrated in FIG. 2 is arranged in a matrix form as shown in FIG. 1. The source electrode 19, the drain electrode 19 ′, the pixel electrode 21, and the cross portion connecting wiring 60 are formed in the opening portion of the second light transmissive photosensitive resin 12 ′.

Example 2

FIG. 8 is a cross-sectional view of the thin film transistor 10 shown in FIG. 1, which is different from the cross-sectional view of the thin film transistor 10 shown in FIG. 2. The ohmic contact layer (n + semiconductor layer) 16 and the protective layer 17 are different from each other. It is the composition. Hereinafter, the manufacturing process of this thin film transistor is demonstrated. First, the gate-source wiring process is the same as the process shown in FIG. 3, and the following formation process of the thin film transistor is shown in FIG.

FIG. 9 is a step of forming a thin film transistor subsequent to the gate-source wiring process of FIG. 3, and as shown in FIG. 9A, the gate insulating film 14, the a-Si semiconductor film 15, and the protective film 17 are shown. ) Are formed sequentially. In addition, the broken line A-A 'is sectional drawing of the thin film transistor part 40 shown to FIG. 9B, and the broken line BB' and the broken line C-C 'are shown to FIG. 9B. It is sectional drawing of the cross part 41 of wiring.

Next, similarly to (a) of FIG. 6, the second light transmissive photosensitive resin 12 ′ is applied, and as shown in FIG. 9 (b), on the gate wiring 101 ′ and the source wiring ( 201 '), the thin film transistor part 40, and the 2nd photomask for forming the cross part 41 of wiring in island shape are used for exposure, image development, and baking. In addition, as shown in FIG. 9C, the thin film transistor section 40, the wiring cross section 41 of the wiring, and a part of the pixel contact layer 21 ′ are half exposed 42.

FIG. 10 is a step of forming a thin film transistor subsequent to FIG. 9, and as shown in FIG. 10A, the protective film 17 is etched with DHF wet or CF ₄ . Next, as shown in FIG. 10B, the semiconductor film 15 and the half exposure part 42 are dry etched with SF ₆ .

Next, as shown in FIG. 10 (c), the resist 110 is applied with ink jet to regions other than the thin film transistor section 40 and the cross section 41 of the wiring. This cross section is shown in FIG.10 (d).

FIG. 11 is a step of forming a thin film transistor subsequent to FIG. 10. As shown in FIG. 11A, the gate insulating film 14 and the protective film 17 are dry-etched with CF ₄ or C ₂ F ₈ . Next, as shown in Fig. 11B, P ions are doped to form an ohmic contact layer (n + semiconductor layer) 16. Next, as shown in FIG. 11C, after removing the resist 110, as shown in FIG. 11D, the cap metal 30 is selectively etched with DHF.

FIG. 12 is a thin film transistor forming process and a pixel electrode forming process subsequent to FIG. 11, as shown in FIG. 12A, the source electrode 19, the drain electrode 19 ′, the pixel electrode 21, and the like. The cross section connection wiring 60 is formed by ink jet application. This top view is shown in Fig. 12B.

Example 3

FIG. 13 is a cross sectional view of the thin film transistor 10 shown in FIG. 1, and the second light transmissive photosensitive resin 12 ′ is omitted from the cross sectional view of the thin film transistor 10 shown in FIG. 8. Hereinafter, the manufacturing process of this thin film transistor is demonstrated. First, the gate-source wiring process is the same as the process shown in FIG. In addition, the formation process of the following thin film transistor is the same until the process shown to FIG. 9, FIG. 10, and FIG. The process following FIG. 11B is shown in FIG.

In FIG. 14, the thing different from FIG.11 (c), (d) first performs the etching of the cap metal 30, as shown to FIG.14 (a), and then, FIG.14 (b) ), The second light transmissive photosensitive resin 12 'and the resist 110 are peeled off.

FIG. 15 is a process of forming a thin film transistor and a process of forming a pixel electrode subsequent to FIG. 14, as shown in FIG. 15A, the source electrode 19, the drain electrode 19 ′, the pixel electrode 21, and the like. The cross section connection wiring 60 is formed by ink jet application. This plan view is shown in Fig. 15B.

Example 4

Based on the previous embodiment, a 32-inch wide, 1920 × RGB × 1080 pixel full high-definition (Full HD) compliant TFT array was produced with the specifications (1) to (3) below as an example. As Comparative Example 1, a 32-type wide TFT array was produced with the same specifications based on the known example.

(1) Source wiring length: 400 mm, wiring width: 10 µm, wiring material: silver (Ag) (specific resistance 2.5 µΩcm), film thickness: 0.5 µm

(2) Cross section connection wiring length of source wiring: 20 µm (1080 locations in total), contact area: 10 µm x 10 µm (2160 locations in total)

(3) Cross-connect connection wiring material: the present invention: silver (Ag) (resistance of 2.5 µΩcm), comparative example 1: ITO (resistance of 100µΩcm)

In addition, the resistance value of the straight wiring was 2 kPa.

As a result, the source wiring resistance according to the present invention was only increased by less than 1% compared to the straight source wiring resistance without cross section connection wiring. The breakdown of the wiring resistance and the non-contact resistance of the source wiring are shown in Tables 1 and 2 together with the comparative examples.

The present invention Comparative Example 1 ① Straight wiring resistance 1892Ω 1892Ω ② Cross section wiring resistance 108Ω 4320Ω ③ contact resistance 10.8Ω 2160Ω Source wiring resistance (① + ② + ③) 2010.8Ω 8372 Ω Increasing Resistance to Straight Wiring 0.5% 320%

The present invention Comparative Example 1 Non-contact resistance 0.05 × 10 ^-8 Ω㎠ 10 × 10 ^-8 Ω㎠

Example 5

Similarly, a 32-inch wide, 1920 × RGB × 1080 pixel full high-vision (Full HD) compliant TFT array was fabricated in the following specifications (1) to (3) based on the previous embodiment. In Comparative Example 2, a mask for the pixel portion and a mask for the crosslinking portion were prepared separately so that the crosslinking portion (known as cross-section connection wiring in the present invention) of the known example can be connected with silver (Ag). A 32-inch wide TFT array was produced.

(1) Source wiring length: 400 mm, wiring width: 10 µm, wiring material: silver (Ag) (specific resistance 2.5 µΩcm), film thickness: 0.5 µm

(2) Cross section connection wiring length of source wiring: 20 µm (1080 locations in total), contact area: 10 µm x 10 µm (2160 locations in total)

(3) Cross-section connection wiring material: this invention: baking silver (resistance 2.5 micrometers cm), comparative example 2: sputtering silver (Ag) (resistance 2.5 micrometers cm)

In addition, the resistance value of the straight wiring was 2 kPa.

As a result, the source wiring resistance of the present invention was increased by less than 1% compared to the straight wiring resistance without cross section connection wiring, but sputtering increased by more than 10% in the connection by (Ag). The details of the source wiring resistance and the non-contact resistance are shown in Tables 3 and 4 together with Comparative Example 2.

The present invention Comparative Example 2 ① Straight wiring resistance 1892Ω 1892Ω ② Cross section wiring resistance 108Ω 108Ω ③ contact resistance 10.8Ω 216Ω ④ Source wiring resistance (① + ② + ③) 2010.8Ω 2216Ω Increasing Resistance to Straight Wiring 0.5% 10.8%

The present invention Comparative Example 2 Non-contact resistance 0.05 × 10 ^-8 Ω㎠ 1 × 10 ^-8 Ω㎠

Since the ink jet wiring process is used, an expensive vacuum apparatus (sputter apparatus, metal etching apparatus) is unnecessary, and manufacturing cost can be reduced. In addition, since the number of manufacturing steps is greatly reduced, the manufacturing cost can be further reduced. In addition, due to the drastic shortening of the procedure, on-demand production without inventory is also possible.

In addition, a single photomask is patterned using a light transmissive photosensitive resin so that inkjet coating of various types of wiring patterns can be carried out at the same time, and the patterned light transmissive photosensitive resin is used for ink jet wiring and is also used as an etching mask. Can be used.

In particular, since the ink containing the metal fine particles of the same kind as the source wiring or the gate wiring is used for the cross-connection connecting wiring formed in the opening of the second light transmissive photosensitive resin, the wiring resistance is not increased even with a small number of masks.

Moreover, until now, the thin film transistor (TFT) array which reduced wiring resistance and reduced the number of masks without increasing wiring resistance, and its manufacturing method are unknown.

Claims (12)

On the insulating substrate, a thin film transistor in which a gate electrode, a gate insulating film, a semiconductor layer, an ohmic contact layer, a source electrode, a drain electrode, and a protective film are sequentially formed, the thin film transistor are arranged in a matrix, and a gate electrode is formed. A liquid crystal display device comprising a gate wiring, a source wiring connected to a source electrode, and a cross portion connecting wiring in the gate wiring or the source wiring, At least a gate wiring and a source wiring are formed in the opening part of the light transmissive photosensitive resin among the said gate wiring, the source wiring, and the cross part connection wiring. The method of claim 1, The said gate wiring, the source wiring, and the cross part connection wiring are baking silver, The liquid crystal display device characterized by the above-mentioned. On the insulating substrate, a thin film transistor in which a gate electrode, a gate insulating film, a semiconductor layer, an ohmic contact layer, a source electrode, a drain electrode, and a protective film are sequentially formed, the thin film transistor are arranged in a matrix shape, and the pixel contact layer is disposed on the drain electrode. The pixel electrode connected through the gate, the gate wiring on which the gate electrode is formed, the source wiring connected to the source electrode, the storage capacitor wiring connected to the storage capacitor, the wiring and auxiliary wiring of any one of the gate wiring and the source wiring. A liquid crystal display device having a cross section connection wiring in a capacitor wiring, A storage capacitor wiring except for the pixel contact layer, the gate wiring, the source wiring, and the cross-connection wiring is formed in the opening of the light transmissive photosensitive resin. The method of claim 3, The ohmic contact layer is an n + layer, the liquid crystal display device. The method of claim 3, And the ohmic contact layer is an n + layer ion-doped with a semiconductor layer. The method of claim 3, The storage capacitor wiring except for the pixel contact layer, the gate wiring, the source wiring, and the cross-connection wiring is formed in the opening of the light transmissive photosensitive resin by inkjet coating. The method of claim 3, The said source electrode, the drain electrode, the pixel electrode, and the cross part connection wiring are formed by inkjet coating, The liquid crystal display device characterized by the above-mentioned. The method of claim 3, The storage capacitor wiring and the pixel electrode are formed by inkjet coating a transparent conductor. On the insulating substrate, a thin film transistor in which a gate electrode, a gate insulating film, a semiconductor layer, an ohmic contact layer, a source electrode, a drain electrode, and a protective film are sequentially formed, the thin film transistor are arranged in a matrix shape, and the pixel contact layer is disposed on the drain electrode. The pixel electrode connected through the gate, the gate wiring on which the gate electrode is formed, the source wiring connected to the source electrode, the storage capacitor wiring connected to the storage capacitor, the wiring and auxiliary wiring of any one of the gate wiring and the source wiring. As a manufacturing method of the liquid crystal display device which provided the cross-section connection wiring to the capacitance wiring, The storage capacitor wirings excluding the pixel contact layer, the gate wiring, the source wiring, and the cross-connection wiring are the same as the photomask, and the ink jet is applied to the openings of the light-transmissive photosensitive resin in which these layers and the wirings are patterned at the same time. It is formed simultaneously in a layer, The manufacturing method of the liquid crystal display device characterized by the above-mentioned. The method of claim 9, The storage capacitor wirings excluding the pixel contact layer, the gate wiring, the source wiring, and the cross-connection wiring are a first photomask, and ink jet is applied to the openings of the first light transmissive photosensitive resin in which these layers and the wirings are patterned at the same time. By the same layer on the same layer, The source electrode, the drain electrode, the pixel electrode, and the cross-section connection wiring are second photomasks, and are formed in the same layer by ink jet coating in the openings of the second light transmissive photosensitive resin in which these electrodes and the wiring are patterned at the same time. It is formed simultaneously, The manufacturing method of the liquid crystal display device characterized by the above-mentioned. The method of claim 10, The second light transmissive photosensitive resin formed of the second photomask is used as an opening for inkjet coating the source electrode, the drain electrode, the pixel electrode, and the cross-connection connection wiring, and at the same time, also as an etching mask for forming a thin film transistor. It is used, The manufacturing method of the liquid crystal display device characterized by the above-mentioned. The method of claim 9, The storage capacitor wirings except for the pixel contact layer, the gate wiring, the source wiring and the cross-connection wiring are the first photomasks, and the ink jet is applied to the openings of the light-transmissive photosensitive resin in which the layers and the wirings are patterned at the same time. Formed on the same layer at the same time, The source electrode, the drain electrode, the pixel electrode, and the cross-section connection wiring are second photomasks, which are simultaneously formed in the same layer in the opening of the protective film in which these electrodes and the wiring are patterned at the same time by applying ink jet. The manufacturing method of the liquid crystal display device made into.

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