KR100730378B1 - heating apparatus of vapour gas - Google Patents

heating apparatus of vapour gas Download PDF

Info

Publication number
KR100730378B1
KR100730378B1 KR1020050080539A KR20050080539A KR100730378B1 KR 100730378 B1 KR100730378 B1 KR 100730378B1 KR 1020050080539 A KR1020050080539 A KR 1020050080539A KR 20050080539 A KR20050080539 A KR 20050080539A KR 100730378 B1 KR100730378 B1 KR 100730378B1
Authority
KR
South Korea
Prior art keywords
reaction gas
tube body
heating means
heat
passage
Prior art date
Application number
KR1020050080539A
Other languages
Korean (ko)
Other versions
KR20070024912A (en
Inventor
최종식
Original Assignee
(주)대하이노텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)대하이노텍 filed Critical (주)대하이노텍
Priority to KR1020050080539A priority Critical patent/KR100730378B1/en
Publication of KR20070024912A publication Critical patent/KR20070024912A/en
Application granted granted Critical
Publication of KR100730378B1 publication Critical patent/KR100730378B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 반도체 장비 등에 사용되는 반응가스를 챔버 내에서의 반응성이 향상되도록 일정온도로 가열시켜 주는 반응가스 가열 수단에 관한 것으로; 상하부가 개구되어 내부에 통로가 형성되는 원통형상의 튜브체와, 상기 튜브체의 통로에 밀착되게 끼워져 가스이동공을 형성하도록 몸체의 외주면에 이동홈이 나선형상으로 형성되는 열전도체와, 상기 튜브체의 외측에 일정간격을 유지하며 감겨져 외부의 전원이 투입되면 발열되어 상기 튜브체와 열전도체를 가열시키는 히터선으로 이루어진 것을 특징으로 한다.The present invention relates to a reaction gas heating means for heating the reaction gas used in semiconductor equipment and the like to a certain temperature to improve the reactivity in the chamber; A cylindrical tube body having an upper and a lower part opened therein to form a passage therein, a heat conductor having a spirally moved groove formed on the outer circumferential surface of the body so as to be in close contact with the passage of the tube body to form a gas moving hole, and the tube body It is wound while maintaining a predetermined interval on the outside of the heater is characterized in that the heating wire is heated to heat the tube body and the heat conductor is turned on.

본 발명에 의한 반응가스 가열 수단은 원통형상의 튜브체의 내측부에 반응가스가 이동할 수 있도록 이동홈이 나선형상으로 형성된 열전도체를 삽입하여 고정시키고 튜브체의 외측에 일정간격을 유지하며 히터선을 감아줌으로서 그 구조가 간단하여 제조 단가를 줄이는 효과가 있다. The reaction gas heating means according to the present invention inserts and fixes a heat conductor having a moving groove formed in a spiral shape so as to move the reaction gas to the inner side of the cylindrical tube body, and maintains a constant distance on the outside of the tube body and winds up the heater wire. By zooming, the structure is simple, which reduces the manufacturing cost.

반응가스, 히터, 반도체, 챔버 Reaction gas, heater, semiconductor, chamber

Description

반응가스 가열 수단 { heating apparatus of vapour gas }Reaction gas heating means {heating apparatus of vapour gas}

도 1은 본 발명에 따른 반응가스 가열 수단의 결합 사시도. 1 is a perspective view of the combined reaction gas heating means according to the present invention.

도 2는 본 발명에 따른 반응가스 가열 수단의 분해 사시도. Figure 2 is an exploded perspective view of the reaction gas heating means according to the present invention.

도 3은 본 발명에 따른 반응가스 가열 수단의 단면을 도시한 도면. Figure 3 shows a cross section of the reaction gas heating means according to the invention.

도 4는 본 발명에 따른 반응가스 가열 수단의 적용예를 도시한 도면.Figure 4 shows an application example of the reaction gas heating means according to the present invention.

*** 도면의 주요부분에 대한 부호의 설명 ****** Explanation of symbols for main parts of drawing ***

1: 반응가스 가열 수단 10: 튜브체1: Reaction gas heating means 10: Tube body

20: 열전도체 30: 히터선20: heat conductor 30: heater wire

40: 냉각수순환관40: cooling water circulation pipe

본 발명은 반응가스 가열 수단에 관한 것으로서, 보다 상세하게는 반도체 장비 등에 사용되는 반응가스를 챔버 내에서의 반응성이 향상되도록 일정온도로 가열시켜 주는 반응가스 가열 수단에 관한 것이다. The present invention relates to a reaction gas heating means, and more particularly, to a reaction gas heating means for heating the reaction gas used in semiconductor equipment and the like to a certain temperature to improve the reactivity in the chamber.

일반적으로 반도체 웨이퍼의 표면에 박막을 증착시키는 데에는 챔버 내부를 진공상태로 유지시킨 상태에서 반응가스를 투입하게 된다. 이때, 반응가스의 온도를 상승시켜 주게 되면 활성화에너지가 낮아지게 되어 반응성이 향상되는 효과를 얻게 된다.Generally, to deposit a thin film on the surface of a semiconductor wafer, a reaction gas is introduced while the inside of the chamber is maintained in a vacuum state. At this time, when the temperature of the reaction gas is increased, the activation energy is lowered, and the reactivity is improved.

따라서, 챔버에 반응가스를 투입하기 전에 반응가스를 일정온도로 가열시켜 주기 위한 전처리과정이 수반되는데, 그 일예로 대한민국 등록특허 제0457451호 "소스 및 반응가스 전처리 장치"가 제시된 바 있다.Therefore, a pretreatment process for heating the reaction gas to a predetermined temperature before the reaction gas is introduced into the chamber is accompanied, for example, Korean Patent No. 0457451 "Source and Reaction Gas Pretreatment Device" has been presented.

그런데 상기 등록특허의 구성을 살펴보면 유입관과 공급관의 말단을 서로 연결하며, 그 내부에 충진된 다수의 미세볼을 포함하며, 나선형으로 감긴 소스 및 반응가스 튜브와; 상기 나선형으로 감긴 소스 및 반응가스 튜브의 외면을 둘러 감싸는 히팅라인과; 상기 유입관과 공급관의 말단이 각각 관통하는 저면 및 상면을 가지며, 상기 소스 및 반응가스 튜브 및 상기 히팅라인을 수용하는 원기둥 형상의 프레임과; 상기 프레임의 외면을 나선형으로 둘러싸는 튜브형 냉각용매순환관과; 상기 냉각용매순환관의 말단이 각각 연결되어 상기 냉각용매 순환관의 내부로 냉각용매를 순환시키는 냉각용매 저장장치와; 상기 히팅라인의 말단과 각각 연결되어 상기 히팅라인으로 전압을 인가하는 전원공급장치;로 구성된다.By the way, looking at the configuration of the registered patent connecting the ends of the inlet pipe and the supply pipe to each other, including a plurality of fine balls filled therein, spirally wound source and the reaction gas tube; A heating line surrounding an outer surface of the spirally wound source and reaction gas tube; A cylindrical frame having a bottom surface and an upper surface through which the ends of the inflow pipe and the supply pipe pass, respectively, for accommodating the source and reaction gas tubes and the heating line; A tubular cooling solvent circulation tube spirally surrounding the outer surface of the frame; A cooling solvent storage device connected to each end of the cooling solvent circulation pipe to circulate the cooling solvent into the cooling solvent circulation pipe; And a power supply device connected to each end of the heating line to apply a voltage to the heating line.

따라서, 나선형 튜브의 외부에 감긴 히팅라인이 가열되면서 나선형 튜브에 열이 전달되면 나선형 튜브의 내부로 유입되는 반응가스가 튜브 내부에 충진된 미세볼을 거치면서 이동하여 가열되어 배출되는 것이다.Therefore, when the heating line wound outside the spiral tube is heated and heat is transferred to the spiral tube, the reaction gas flowing into the spiral tube moves through the fine balls filled in the tube and is heated and discharged.

그런데, 상기 튜브는 나선형으로 형성되어 있어 그 구조가 복잡하고, 내부에 미세볼을 충전하고, 그와 같은 튜브의 외측면을 따라 히팅라인을 감아주는 작업을 수행해야 하므로 그 구조가 복잡하고, 그 제조가 용이하지 못한 문제점을 가지고 있었다.By the way, the tube is formed in a helical structure is complicated, and the structure is complicated because it is necessary to perform the operation of filling the fine ball therein, and winding the heating line along the outer surface of such a tube, There was a problem that manufacturing is not easy.

아울러, 가스가 이동하는 통로인 튜브에 일일이 히팅라인을 감아주게 되고, 미세볼이 충전됨으로 인해 가열시간이 오래 걸리고 전력소모가 많아지게 되는 문제점도 가지고 있었다.In addition, the heating line is wound around the tube, which is a passage through which the gas moves, and the heating time is long and power consumption increases due to the fine balls being charged.

따라서, 이러한 문제점들을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 그 구조가 간단하고 열전달이 용이한 구조를 가지는 반응가스 가열 수단을 제공하는데 있다. Accordingly, an object of the present invention is to provide a reaction gas heating means having a simple structure and easy heat transfer.

본 발명의 다른 목적은 전력소모를 최소화할 수 있는 구조를 가지며 반도체 제조공정 등 다양한 분야에 적용가능한 반응가스 가열 수단을 제공함에 있다.Another object of the present invention is to provide a reaction gas heating means having a structure capable of minimizing power consumption and applicable to various fields such as a semiconductor manufacturing process.

본 발명은 반응가스 가열 수단에 관한 것으로; 상하부가 개구되어 내부에 통로가 형성되는 원통형상의 튜브체와, 상기 튜브체의 통로에 밀착되게 끼워져 가스이동공을 형성하도록 몸체의 외주면에 이동홈이 나선형상으로 형성되는 열전도체와, 상기 튜브체의 외측에 일정간격을 유지하며 감겨져 외부의 전원이 투입되면 발 열되어 상기 튜브체와 열전도체를 가열시키는 히터선으로 이루어진 것을 특징으로 한다.The present invention relates to a reaction gas heating means; A cylindrical tube body having an upper and a lower part opened therein to form a passage therein, a heat conductor having a spirally moved groove formed on the outer circumferential surface of the body so as to be in close contact with the passage of the tube body to form a gas moving hole, and the tube body Maintaining a predetermined interval on the outside of the wound is heated when the external power is turned on is characterized in that consisting of a heater wire for heating the tube body and the heat conductor.

본 발명에 따른 반응가스 가열 수단을 첨부한 도면을 참고로 하여 이하에 상세히 기술되는 실시예에 의하여 그 특징들을 이해할 수 있을 것이다.With reference to the accompanying drawings, the reaction gas heating means according to the present invention will be understood by the embodiments described in detail below.

도 1은 본 발명에 따른 반응가스 가열 수단의 결합 사시도이고, 도 2는 본 발명에 따른 반응가스 가열 수단의 분해 사시도이고, 도 3은 본 발명에 따른 반응가스 가열 수단의 단면을 도시한 도면이고, 도 4는 본 발명에 따른 반응가스 가열 수단의 적용예를 도시한 도면이다.1 is a combined perspective view of the reaction gas heating means according to the present invention, FIG. 2 is an exploded perspective view of the reaction gas heating means according to the present invention, and FIG. 3 is a cross-sectional view of the reaction gas heating means according to the present invention. 4 is a view showing an application example of the reaction gas heating means according to the present invention.

도 1 내지 도 3에 의하면, 본 발명에 따른 반응가스 가열 수단(1)은 원통형상의 튜브체(10)와, 그 튜브체(10)의 내측에 끼워지되 반응가스가 이동할 수 있도록 이동홈(22)이 나선형상으로 형성된 열전도체(20)와, 상기 튜브체(20)의 외측에 일정간격을 유지하며 감겨지는 히터선(30)으로 이루어진다.1 to 3, the reaction gas heating means 1 according to the present invention includes a cylindrical tube body 10 and a moving groove 22 that is fitted inside the tube body 10 to allow the reaction gas to move. ) Is composed of a heat conductor 20 formed in a spiral shape, and the heater wire 30 is wound while maintaining a predetermined interval on the outside of the tube body (20).

이하, 상기 각각의 구성을 구체적으로 상세히 설명한다.Hereinafter, each configuration will be described in detail.

상기 튜브체(10)는 내부에 가스가 이동할 수 있는 통로(12)가 형성되는 것으로 상하부가 개구되어 유입구(14a) 및 배출구(14b)의 역할을 하게 되며, 추후 반응가스가 투입되는 경우 진공상태를 유지하게 된다. 이때, 상기 튜브체(10)는 그 열전달을 용이하게 하기 위해 쿼츠(quartz), 세라믹, 스테인리스 스틸(STAINLESS STEEL; SUS) 중에 어느 하나의 재질로 이루어지게 된다. 또한, 상기 튜브체(10)의 유입구(14a) 및 배출구(14b) 쪽에는 외부의 관체가 연결될 수 있도록 유입공(15a) 및 배출공(16b)이 각각 형성된 유입구캡(15) 및 배출구캡(16)이 각각 구비된다.The tube body 10 has a passage 12 through which a gas can move, and the upper and lower portions thereof are opened to serve as the inlet port 14a and the outlet port 14b. Will be maintained. In this case, the tube body 10 is made of any one of quartz, ceramic, stainless steel (SUS) to facilitate the heat transfer. In addition, the inlet 14a and the outlet 14b of the tube body 10, the inlet cap 15 and the outlet cap (15) and the outlet cap (15) formed with the inlet hole (15a) and the outlet hole (16b), respectively, so that the outer tube can be connected; 16) are provided respectively.

그리고, 상기 튜브체(10)의 외부에 감기는 히터선(30)은 대략 1000℃ 내외로 가열이 가능하도록 구비되며, 외부의 전원이 투입되면 가열된다.The heater wire 30 wound around the outside of the tube body 10 is provided to be capable of heating to about 1000 ° C., and is heated when external power is turned on.

한편, 상기 튜브체(10)의 통로(12)의 중간부분에 삽입되는 열전도체(20)는 원기둥형상의 몸체(22)의 외주면에 이동홈(22a)이 일정간격을 유지하며 반복적으로 나선형상으로 형성되어 있어 반응가스의 이동거리를 길게 해주는 역할을 하게 된다.On the other hand, the heat conductor 20 is inserted into the middle portion of the passage 12 of the tube body 10, the moving groove 22a on the outer circumferential surface of the cylindrical body 22 maintains a constant interval and is repeatedly spiral It is formed to act to lengthen the moving distance of the reaction gas.

이때, 상기 열전도체(20)는 그 재질을 상기 튜브체(10)와 동일하게 쿼츠, 세라믹, 스테인리스 스틸 중에 어느 하나의 재질로 형성하게 된다.In this case, the thermal conductor 20 is formed of any one material of quartz, ceramic, stainless steel, the same material as the tube body 10.

이와 같은 열전도체(20)를 튜브체(10)의 통로(12)에 끼워 고정시키게 되면, 열전도체(20)가 통로에 밀착되면서, 튜브체(10)의 통로(12) 내벽(12a)과 이동홈(22a)이 가스이동공(23)을 형성하게 된다.When the thermal conductor 20 is fixed to the passage 12 of the tube body 10, the thermal conductor 20 closely adheres to the passage, and the inner wall 12a of the passage 12 of the tube body 10 is fixed. The moving groove 22a forms the gas moving hole 23.

따라서, 반응가스는 가스이동공(23)을 따라 이동하게 되는데 가스이동공(23)은 이동홈(22a)이 나선형으로 형성되어 있어 이 역시 나선형으로 형성됨을 알 수 있다.Therefore, the reaction gas is moved along the gas moving hole 23, the gas moving hole 23 is a moving groove 22a is formed in a spiral it can be seen that this is also formed in a spiral.

여기서, 상기 튜브체(10)의 외부에 구비되는 히터선(30)의 외측에는 커버체(32)가 형성되고 그 외측에는 냉각수가 순환될 수 있는 냉각수순환관(40)이 더 구비되어 가열된 열기가 외부로 방출되어 주변공기의 온도를 상승시키는 것을 방지하도록 구성하게 된다.Here, the cover body 32 is formed on the outside of the heater wire 30 provided on the outside of the tube body 10 and a cooling water circulation tube 40 through which the coolant can be circulated is further provided and heated. It is configured to prevent heat from being released to the outside to raise the temperature of the surrounding air.

한편, 반응가스는 진공상태에서 원통형 통로상에서는 최단경로(最短徑路)인 중심축상으로 직진하는 성질을 가지게 된다. On the other hand, the reaction gas has a property of going straight on the central axis which is the shortest path on the cylindrical passage in the vacuum state.

그러나, 본 발명에서는 가스이동공(23)이 튜브체(10)의 내측 통로(12a)상에 나선형으로 형성되어 있으므로 열전도체(20)의 중심쪽으로 최단경로인 지점(P)을 따라 반응가스가 이동하게 된다.However, in the present invention, since the gas moving hole 23 is formed spirally on the inner passage 12a of the tube body 10, the reaction gas is formed along the point P which is the shortest path toward the center of the heat conductor 20. Will move.

즉, 이와 같은 원리에 의해 실제로 히터선(30)이 가열되면 그 열기는 튜브체(10)와 열전도체(20)에 전달됨으로 인해 열전도체(20)의 이동홈(22a)의 일측 몸체(22)를 단시간내에 가열시켜 주게 되어 반응가스를 원하는 정도까지의 온도로 충분히 가열이 가능해진다. That is, according to this principle, when the heater wire 30 is actually heated, the heat is transmitted to the tube body 10 and the heat conductor 20, so that one body 22 of the moving groove 22a of the heat conductor 20 is heated. ) Is heated in a short time, and the reaction gas can be sufficiently heated to a desired temperature.

한편, 히터선(30)이 가열되어 발열되는 열은 가스이동공(23)의 외부를 골고루 가열시켜 주어 단시간내에 충분히 반응가스의 온도를 상승시켜주는 기능을 수행할 수 도 있게 된다. On the other hand, the heat generated by heating the heater wire 30 may evenly heat the outside of the gas moving hole 23 to perform a function of sufficiently raising the temperature of the reaction gas within a short time.

이하, 도 1 내지 도 4를 참고로 본 발명에 따른 반응가스 가열 수단의 설치예를 상세히 설명한다. Hereinafter, an installation example of the reaction gas heating means according to the present invention will be described in detail with reference to FIGS. 1 to 4.

도면에 도시한 바와 같이 반응가스 가열 수단(1)은 그 일예로서 화학 기상 증착(Chemical Vapor Deposition)공정을 수행하기 위한 반응 챔버(100)의 일측면에 구비된 가스유입공(102)을 통해 투입되는 반응가스를 가열시켜 주는 장치로서 반응가스저장탱크(110)로 부터 유입관(111a)을 통해 반응가스가 유입되면 이를 가열시 켜 주어 챔버(100)에 연결되는 배출관(111b)으로 이동하게 된다. As shown in the drawing, the reaction gas heating means 1 is introduced through a gas inlet hole 102 provided on one side of the reaction chamber 100 for performing a chemical vapor deposition process as an example. As a device that heats the reaction gas, when the reaction gas is introduced from the reaction gas storage tank 110 through the inlet pipe 111a, the reaction gas is heated to move to the discharge pipe 111b connected to the chamber 100. .

이때, 선행하는 작업으로 먼저 챔버(100)의 일측에 형성된 배출공(104)을 통해 외부에 구비된 펌프(106)를 구동시켜 챔버(100) 내부의 공기를 빼내 진공상태로 유지시킨 상태에서 외부의 전원을 투입하여 히터 모듈(108)을 구성하는 히팅플레이트(107)의 히터선(107a)에 전원을 공급하여 가열시키면 그 열은 히팅플레이트(107)의 상면에 전달되어 반도체 웨이퍼(200)를 가열시켜 주게 된다. 그리고, 상기 반응가스 가열 수단(1)에서 반응가스를 충분히 가열한 다음 가스유입공(102)을 통해 반응가스를 챔버(100)의 내부로 투입시켜 주게 된다. 이때, 챔버(100) 내부의 히팅플레이트(107)는 약 380℃를 유지하며 가열시켜 주면서 진공증착하여 박막을 코팅시키게 된다. At this time, by driving the pump 106 provided on the outside through the discharge hole 104 formed on one side of the chamber 100 in the preceding operation to remove the air in the chamber 100 in the external state in a vacuum state When the power is supplied to the heater wire 107a of the heating plate 107 constituting the heater module 108 by supplying power to the heat is transferred to the upper surface of the heating plate 107 to transfer the semiconductor wafer 200 It will heat up. Then, the reaction gas is sufficiently heated in the reaction gas heating means 1 and then the reaction gas is introduced into the chamber 100 through the gas inlet hole 102. At this time, the heating plate 107 inside the chamber 100 maintains about 380 ° C. while heating to coat the thin film by vacuum deposition.

이와 같은 과정을 반복적으로 수행시에 가스유입공(102)을 통해 유입되는 반응가스의 온도가 충분히 가열되지 못하여 낮은 온도상태로 투입된 경우에는 반응성이 떨어지게 되어 증착작업이 원활히 수행되지 못하게 되나, 가스유입공(102)을 통해 투입하기 전에 본 발명에 따른 반응가스 가열 수단(1)을 통해 충분한 가열이 이루어져 투입되는 경우에는 반응성이 크게 향상되어 증착효율이 향상되는 효과를 얻을 수 있게 된다. When this process is repeatedly performed, if the temperature of the reaction gas introduced through the gas inlet hole 102 is not sufficiently heated and is introduced at a low temperature, the reactivity decreases, and thus the deposition operation is not performed smoothly. In the case where sufficient heating is made through the reaction gas heating means 1 according to the present invention before the injection through the hole 102, the reactivity is greatly improved, and thus the deposition efficiency can be improved.

이상과 같이 본 발명의 실시예에 대하여 상세히 설명하였으나, 본 발명의 권리범위는 이에 한정되지 않으며, 본 발명의 실시예와 실질적으로 균등의 범위에 있는 것까지 본 발명의 권리범위가 미친다. As described above, embodiments of the present invention have been described in detail, but the scope of the present invention is not limited thereto, and the scope of the present invention extends to the range substantially equivalent to the embodiments of the present invention.

상술한 바와 같이 본 발명에 의한 반응가스 가열 수단(1)은 원통형상의 튜브체(10)의 내측부에 반응가스가 이동할 수 있도록 이동홈(22a)이 나선형상으로 형성된 열전도체(20)를 삽입하여 고정시키고 튜브체(10)의 외측에 일정간격을 유지하며 히터선(30)을 감아줌으로서 그 구조가 간단하여 제조 단가를 줄이는 효과가 있다. As described above, the reaction gas heating means 1 according to the present invention inserts a heat conductor 20 having a moving groove 22a formed in a spiral shape to allow the reaction gas to move to the inner side of the cylindrical tube body 10. By fixing and maintaining a predetermined interval on the outside of the tube body 10 and winding the heater wire 30, the structure is simple, there is an effect of reducing the manufacturing cost.

아울러, 열전도체(20)의 외주면에 형성된 이동홈(22)과 튜브체(10)의 통로(12) 내벽(12a)에 의해 형성되는 나선형상의 가스이동공(23)에 히터선(30)의 가열에 의한 열이 고르게 전달되어 반응가스를 단시간내에 필요한 온도로 가열할 수 있다.In addition, the heater wire 30 is formed in the spiral gas moving hole 23 formed by the moving groove 22 formed on the outer circumferential surface of the heat conductor 20 and the inner wall 12a of the passage 12 of the tube body 10. Heat by heating is evenly transferred to heat the reaction gas to the required temperature in a short time.

Claims (2)

상하부가 개구되어 내부에 통로(12)가 형성되는 원통형상의 튜브체(10)와; A cylindrical tube body 10 having an upper and lower part opened therein and having a passage 12 formed therein; 상기 튜브체(10)의 통로(12)에 밀착되게 끼워져 가스이동공(23)을 형성하도록 몸체(22)의 외주면에 이동홈(22a)이 나선형상으로 형성되는 열전도체(20)와;A heat conductor 20 fitted in close contact with the passage 12 of the tube body 10 and having a moving groove 22a formed in a spiral shape on an outer circumferential surface of the body 22 to form a gas moving hole 23; 상기 튜브체(10)의 외측에 일정간격을 유지하며 감겨져 외부의 전원이 투입되면 발열되어 상기 튜브체(10)와 열전도체(20)를 가열시키는 히터선(30);으로 이루어진 것을 특징으로 하는 반응가스 가열 수단.The heater wire 30 is wound while maintaining a predetermined interval on the outside of the tube body 10 is heated when the external power is turned on to heat the tube body 10 and the thermal conductor 20; Reaction gas heating means. 제 1 항에 있어서,The method of claim 1, 상기 튜브체(10) 및 열전도체(20)는 열전달을 용이하게 하기 위해 쿼츠, 세라믹, 스테인리스 스틸 중에 어느 하나의 재질로 이루어지는 것을 특징으로 하는 반응가스 가열 수단.The tube body (10) and the heat conductor (20) is a reaction gas heating means, characterized in that made of any one of quartz, ceramic, stainless steel to facilitate heat transfer.
KR1020050080539A 2005-08-31 2005-08-31 heating apparatus of vapour gas KR100730378B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020050080539A KR100730378B1 (en) 2005-08-31 2005-08-31 heating apparatus of vapour gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050080539A KR100730378B1 (en) 2005-08-31 2005-08-31 heating apparatus of vapour gas

Publications (2)

Publication Number Publication Date
KR20070024912A KR20070024912A (en) 2007-03-08
KR100730378B1 true KR100730378B1 (en) 2007-06-19

Family

ID=38099240

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050080539A KR100730378B1 (en) 2005-08-31 2005-08-31 heating apparatus of vapour gas

Country Status (1)

Country Link
KR (1) KR100730378B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102393965B1 (en) * 2020-02-20 2022-05-02 박복우 Gas heating apparatus and gas delivery system using the same
KR102408975B1 (en) * 2020-09-10 2022-06-14 김유환 Fluid heater and method for manufacturing fluid heater

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0972683A (en) * 1995-09-04 1997-03-18 Hitachi Cable Ltd Heat transfer tube
KR20020068780A (en) * 2001-02-22 2002-08-28 삼성전자 주식회사 Semiconductor Thermal Treatment Equipment having Suppling Gas Pre-Heating Apparatus
JP2002277054A (en) 2000-03-30 2002-09-25 Toshiba Ceramics Co Ltd Fluid heating device
KR20050095289A (en) * 2004-03-26 2005-09-29 서정세 Heat pipe with triangle groove wick

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0972683A (en) * 1995-09-04 1997-03-18 Hitachi Cable Ltd Heat transfer tube
JP2002277054A (en) 2000-03-30 2002-09-25 Toshiba Ceramics Co Ltd Fluid heating device
KR20020068780A (en) * 2001-02-22 2002-08-28 삼성전자 주식회사 Semiconductor Thermal Treatment Equipment having Suppling Gas Pre-Heating Apparatus
KR20050095289A (en) * 2004-03-26 2005-09-29 서정세 Heat pipe with triangle groove wick

Also Published As

Publication number Publication date
KR20070024912A (en) 2007-03-08

Similar Documents

Publication Publication Date Title
US20120323052A1 (en) Evaporator, evaporation method and substrate processing apparatus
CN104934350B (en) Substrate board treatment and the substrate processing method using same using substrate board treatment
US6845732B2 (en) Gas heating apparatus for chemical vapor deposition process and semiconductor device fabrication method using same
KR100516847B1 (en) Steam generation method and apparatus
JP4743495B2 (en) Fluid heating device
US7327948B1 (en) Cast pedestal with heating element and coaxial heat exchanger
US20140231010A1 (en) Chemical supplier, processing apparatus including the chemical supplier
US10141209B2 (en) Processing gas generating apparatus, processing gas generating method, substrate processing method, and storage medium
US20160268146A1 (en) Substrate processing apparatus and substrate processing method
KR101598463B1 (en) Apparatus and Method for treating substrate
KR100730378B1 (en) heating apparatus of vapour gas
US20050235918A1 (en) Substrate treating apparatus
US8030597B2 (en) Partition-type heating apparatus
KR101730147B1 (en) Apparatus and method for treating a substrate
KR100642647B1 (en) Apparatus and method for rising temperature chemical liquid for manufacturing semiconductor
KR102408975B1 (en) Fluid heater and method for manufacturing fluid heater
KR100457451B1 (en) preventive treatment apparatus of vapour source
US20080013930A1 (en) Fluid heating apparatus and fluid treatment apparatus using the same
KR102193372B1 (en) Small steam cleaner using induction heating
JPH10281583A (en) Fluid heating or cooling apparatus
KR100870118B1 (en) Device and method for mixing gases, and plasma treating apparatus using the same
KR101815157B1 (en) An inline mixing and heating apparatus
KR20230173514A (en) Indirect temperature control apparatus for liquid using multiple tube
JPH06275588A (en) Vapor phase cleaning device
KR20070118484A (en) Semiconductor manufacturing apparatus and method for supplying gas to the apparatus

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121214

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20131216

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20141215

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20151210

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee