KR100724091B1 - 화학증착용 전구체 분해 진단장치 및 진단방법 - Google Patents
화학증착용 전구체 분해 진단장치 및 진단방법 Download PDFInfo
- Publication number
- KR100724091B1 KR100724091B1 KR1020050111221A KR20050111221A KR100724091B1 KR 100724091 B1 KR100724091 B1 KR 100724091B1 KR 1020050111221 A KR1020050111221 A KR 1020050111221A KR 20050111221 A KR20050111221 A KR 20050111221A KR 100724091 B1 KR100724091 B1 KR 100724091B1
- Authority
- KR
- South Korea
- Prior art keywords
- precursor
- ultrasonic
- chemical vapor
- vapor deposition
- decomposition
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (8)
- 웨이퍼(7)를 증착하는 반응기(10), 상기 반응기(10)와 연결된 전구체 용기(20)로 구성된 화학증착용 전구체 분해장치에 있어서,상기 전구체 용기(20)의 일측에 부착되어 상기 전구체 용기(20) 내부로 초음파를 투사하고, 반사된 상기 초음파를 수신하는 초음파 센서(30);상기 초음파 센서(30)를 구동하고, 상기 초음파 센서(30)의 출력신호를 증폭하는 초음파 송수신기(40);상기 초음파 송수신기(40)의 출력신호를 변환하는 A/D 변환기(50);상기 A/D 변환기(50)의 출력신호를 초음파의 속도 또는 강도로 이루어진 기준 데이터와 비교하는 비교수단; 및상기 비교수단의 비교결과에 기초하여 증착공정의 계속여부를 결정하는 결정수단으로 구성되는 것을 특징으로 하는 화학증착용 전구체 분해 진단장치.
- 제 1 항에 있어서, 상기 초음파 센서(30)는 상기 전구체 용기(20)의 측면 또는 하면에 부착되는 것을 특징으로 하는 화학증착용 전구체 분해 진단장치.
- 삭제
- 제 1 항에 있어서, 상기 전구체 용기(20) 내의 전구체(25)는 무기, 유기 및 유기금속 화합물중 하나인 것을 특징으로 하는 화학증착용 전구체 분해 진단장치.
- 제 1 항에 있어서, 상기 결정수단은 상기 증착공정을 중단해야 한다고 판단되었을 때 경고음을 재생하거나 또는 경고화면을 표시하는 경고수단을 더 포함하는 것을 특징으로 하는 화학증착용 전구체 분해 진단장치.
- 전구체 용기(20) 및 상기 전구체 용기(20)와 연결되어 화학 증착 공정이 수행되는 반응기(10)를 이용한 화학증착용 전구체 분해방법에 있어서,상기 전구체 용기(20)의 일측에 부착된 초음파 센서(30)를 이용하여 상기 전구체 용기(20) 내부로 초음파를 투사하는 단계(S10);상기 전구체 용기(20) 내부에서 전구체를 지나 상기 초음파가 반사되는 단계(S20);상기 초음파 센서(30)내에 구비된 수신부가 반사된 초음파 신호를 수신하는 단계(S30);상기 수신부가 수신한 초음파 신호를 증폭하고, A/D 변환하는 단계;변환된 데이터를 소정의 기준 데이터와 비교하는 단계(S40);상기 비교결과에 기초하여 증착공정의 계속여부를 결정하는 단계;로 구성되는 것을 특징으로 하는 화학증착용 전구체 분해 진단방법.
- 제 6 항에 있어서, 상기 기준 데이터는 상기 초음파의 속도 또는 강도를 포함하는 것을 특징으로 하는 화학증착용 전구체 분해 진단방법.
- 제 6 항에 있어서, 상기 증착공정을 중단해야 한다고 판단되었을 때 경고음을 재생하거나 또는 경고화면을 표시하는 단계를 더 포함하는 것을 특징으로 하는 화학증착용 전구체 분해 진단방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050111221A KR100724091B1 (ko) | 2005-11-21 | 2005-11-21 | 화학증착용 전구체 분해 진단장치 및 진단방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050111221A KR100724091B1 (ko) | 2005-11-21 | 2005-11-21 | 화학증착용 전구체 분해 진단장치 및 진단방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070053436A KR20070053436A (ko) | 2007-05-25 |
KR100724091B1 true KR100724091B1 (ko) | 2007-06-04 |
Family
ID=38275666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050111221A KR100724091B1 (ko) | 2005-11-21 | 2005-11-21 | 화학증착용 전구체 분해 진단장치 및 진단방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100724091B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100873975B1 (ko) | 2007-05-16 | 2008-12-17 | 한국표준과학연구원 | 이중측정장치를 이용한 전구체 상태 진단 장치 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050037651A (ko) * | 2003-10-20 | 2005-04-25 | 한국표준과학연구원 | 화학 증착 공정시 용기 내의 전구체 잔존량 진단장치 및진단방법 |
-
2005
- 2005-11-21 KR KR1020050111221A patent/KR100724091B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050037651A (ko) * | 2003-10-20 | 2005-04-25 | 한국표준과학연구원 | 화학 증착 공정시 용기 내의 전구체 잔존량 진단장치 및진단방법 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100873975B1 (ko) | 2007-05-16 | 2008-12-17 | 한국표준과학연구원 | 이중측정장치를 이용한 전구체 상태 진단 장치 |
Also Published As
Publication number | Publication date |
---|---|
KR20070053436A (ko) | 2007-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100990845B1 (ko) | 플라즈마 이상 방전 진단 방법, 플라즈마 이상 방전 진단 시스템 및, 컴퓨터 프로그램이 수록된 컴퓨터 판독가능 기록매체 | |
US8091426B2 (en) | Ultrasonic wave measuring method and apparatus | |
JPH07318336A (ja) | パイプラインを超音波で検査するための方法及び装置 | |
KR101716877B1 (ko) | 자가 압전센싱 기반의 비선형 초음파 피로균열 검사 장치 및 방법 | |
WO2009118542A1 (en) | Acoustic level determination of a material in a vessel | |
EP3853575B1 (en) | Signal processing | |
KR100724091B1 (ko) | 화학증착용 전구체 분해 진단장치 및 진단방법 | |
JP2003004710A (ja) | 肉盛管の検査方法 | |
JP2006322825A (ja) | 液位測定方法 | |
KR100778384B1 (ko) | 화학 증착 공정시 용기 내의 전구체 잔존량 진단장치 및진단방법 | |
US20060188646A1 (en) | System and method for detecting remaining amount of precursor in vessel during CVD process | |
JP5507267B2 (ja) | 減衰材の肉厚算出方法及びその装置 | |
KR100592977B1 (ko) | 화학 증착 공정시 용기 내의 전구체 잔존량 진단장치 및진단방법 | |
JP5940350B2 (ja) | 振動計測装置および振動計測方法 | |
JP2009288164A (ja) | 振動監視装置および監視方法 | |
JP3709378B2 (ja) | プラズマ処理装置 | |
CN115854939A (zh) | 一种精准定位芯片内部界面的超声扫描成像方法及系统 | |
KR100892449B1 (ko) | 열악환경에 따른 전구체 상태 진단장치 및 진단방법 | |
JP2006242630A (ja) | 化学蒸着工程時、容器内の前駆体残存量の診断装置及び診断方法 | |
AU2018309644B2 (en) | Ultrasonic corrosion monitoring | |
CN118518758B (zh) | 一种涂层参数的测量方法、装置及系统 | |
US11579006B2 (en) | Radar level gauge and method for detecting a cleaning process using the radar level gauge | |
CA1173569A (en) | Method of detecting hydrogen embrittlement of zirconium alloy | |
JPH0933318A (ja) | 超音波式液位測定方法 | |
Yun et al. | A Diagnostic Technique for the Inspection of Pipes in MOCVD System |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130405 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140407 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150430 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160425 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170412 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180418 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190417 Year of fee payment: 13 |