KR100721169B1 - Gallium nitride based semiconductor light emitting diode and method of manufacturing the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gallium nitride based semiconductor light emitting device and a method of manufacturing the same, which improves the heat dissipation capability of a sapphire substrate, prevents the deterioration of device properties due to heat, and increases the luminous efficiency of the device. .

According to the present invention, a gallium nitride-based semiconductor light emitting device includes: a sapphire substrate having at least one groove formed therein; A heat conductive layer formed on a lower surface of the sapphire substrate to fill the groove, and having a higher thermal conductivity than the sapphire substrate; An n-type nitride semiconductor layer formed on the sapphire substrate; An active layer and a p-type nitride semiconductor layer sequentially formed on a predetermined region of the n-type nitride semiconductor layer; And a p-type electrode and an n-type electrode formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively.

Sapphire Board, Grooves, Femtosecond Laser, Thermal Conductivity, Reflectivity

Description

Gallium nitride based semiconductor light emitting device and method of manufacturing the same

1 is a cross-sectional view showing a gallium nitride-based semiconductor light emitting device according to the prior art.

2 and 3 are cross-sectional views showing a gallium nitride-based semiconductor light emitting device according to a first embodiment of the present invention.

4A to 4E are cross-sectional views of processes for describing a method of manufacturing a gallium nitride based semiconductor light emitting device according to a first embodiment of the present invention.

5 is a cross-sectional view showing a gallium nitride based semiconductor light emitting device according to a second embodiment of the present invention.

6 is a cross-sectional view showing a gallium nitride based semiconductor light emitting device according to a third embodiment of the present invention.

7A to 7C are cross-sectional views illustrating processes of manufacturing a gallium nitride based semiconductor light emitting device according to a third embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

* 200: gallium nitride based light emitting device 201: sapphire substrate

202: n-type nitride semiconductor layer 203: active layer

204 p-type nitride semiconductor layer 205 transparent electrode

206: p-type electrode 207: n-type electrode

208: groove 209: thermal conductive layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gallium nitride semiconductor light emitting device and a method of manufacturing the same, and in particular, to improve the heat dissipation capability of a sapphire substrate, to prevent the deterioration of device characteristics due to heat, and to increase the luminous efficiency of the device. A gallium-based semiconductor light emitting device and a method of manufacturing the same.

Recently, III-V nitride semiconductors such as GaN have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their excellent physical and chemical properties. have. LEDs or LDs using III-V nitride semiconductor materials are widely used in light emitting devices for obtaining light in the blue or green wavelength band, and these light emitting devices are applied to light sources of various products such as home appliances, electronic displays, and lighting devices. Here, the III-V nitride semiconductor is typically made of a GaN-based material having a composition formula of In _X Al _Y Ga _1-XY N (0≤X, 0≤Y, X + Y≤1).

In general, in the gallium nitride-based semiconductor light emitting device using the GaN-based material, since the bulk single crystal of GaN cannot be formed, a substrate suitable for the growth of GaN crystals should be used, and a sapphire substrate is typically used.

Next, a gallium nitride-based semiconductor light emitting device according to the prior art will be described in detail with reference to FIG. 1.

1 is a cross-sectional view showing a gallium nitride-based semiconductor light emitting device according to the prior art.

As shown in FIG. 1, the gallium nitride semiconductor light emitting device 100 according to the related art includes a sapphire substrate 101 for growing a GaN semiconductor material, and n formed sequentially on the sapphire substrate 101. And a p-type nitride semiconductor layer 104, an active layer 103 and a p-type nitride semiconductor layer 104. The p-type nitride semiconductor layer 104 and the active layer 103 are formed by a mesa etching process. As the partial region is removed, the upper portion of the n-type nitride semiconductor layer 102 is exposed.

The n-type and p-type nitride semiconductor layers 102 and 104 and the active layer 103 have an In _X Al _Y Ga _1-XY N composition formula (where 0 ≦ X, 0 ≦ Y, and X + Y ≦ 1). It may be a semiconductor material having. More specifically, the n-type nitride semiconductor layer 102 may be formed of a GaN layer or a GaN / AlGaN layer doped with n-type conductive impurities, the p-type nitride semiconductor layer 104 is a p-type conductive impurities It may be made of a doped GaN layer or a GaN / AlGaN layer. The active layer 103 may be formed of a GaN / InGaN layer having a multi quantum well structure.

The p-type electrode 106 is formed on the p-type nitride semiconductor layer 104 not etched by the mesa etching process, and the n-type electrode 107 on the n-type nitride semiconductor layer 102 exposed through the etching process. ) Is formed. The p-type and n-type electrodes 106 and 107 may be made of a metal material such as Au or Cr / Au.

Here, before forming the p-type electrode 106 on the upper surface of the p-type nitride semiconductor layer 104, a transparent electrode 105 is formed to form an ohmic contact while increasing the current injection area. Can be. The transparent electrode 105 mainly consists of ITO.

The manufacturing method of the gallium nitride-based semiconductor light emitting device according to the prior art is as follows. First, the n-type nitride semiconductor layer 102, the active layer 103, and the p-type nitride semiconductor layer 104 are grown sequentially on the sapphire substrate 101. Subsequently, a portion of the p-type nitride semiconductor layer 104, the active layer 103, and the n-type nitride semiconductor layer 102 is mesa-etched to expose a portion of the n-type nitride semiconductor layer 102. Next, a transparent electrode 105 made of ITO is formed on the p-type nitride semiconductor layer 104. Thereafter, a p-type electrode 106 is formed on the transparent electrode 105, and an n-type electrode 107 is formed on the n-type nitride semiconductor layer 102. The p-type and n-type electrodes 106 and 107 may be formed using a metal such as Au or Au / Cr.

However, in the gallium nitride-based semiconductor light emitting device according to the prior art as described above, due to the large thermal resistance of the sapphire substrate 101, the heat generated inside the light emitting element 100, the sapphire substrate ( 101) there is a problem that is not well emitted to the outside. As a result, the junction temperature may be increased, and eventually the characteristics of the device may be degraded. In particular, as a high power light emitting device applied to a medium-large LCD backlight or lighting, the above-mentioned problems become more serious, and the luminous efficiency is continuously required.

Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is to improve the heat releasing ability of the sapphire substrate, to prevent the deterioration of the characteristics of the device due to heat, and to increase the luminous efficiency of the device. The present invention provides a gallium nitride-based semiconductor light emitting device and a method of manufacturing the same.

Gallium nitride-based semiconductor light emitting device according to the present invention for achieving the above object,

A sapphire substrate on which at least one groove is formed;

A heat conductive layer formed on a lower surface of the sapphire substrate to fill the groove, and having a higher thermal conductivity than the sapphire substrate;

An n-type nitride semiconductor layer formed on the sapphire substrate;

An active layer and a p-type nitride semiconductor layer sequentially formed on a predetermined region of the n-type nitride semiconductor layer; And

And a p-type electrode and an n-type electrode formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively.

Here, the sapphire substrate and the heat conductive layer is formed between, characterized in that it further comprises a reflective layer having a higher reflectance than the sapphire substrate.

In addition, the thermally conductive layer is characterized in that at least one selected from the group consisting of Ag, Cu, Pt, SiC, AlN, solder paste and a thermally conductive polymer.

In addition, the thermal conductive layer is formed using at least one selected from the group consisting of electron beam deposition, sputtering, thermal deposition, chemical vapor deposition, printing and spin coating.

In addition, another gallium nitride-based semiconductor light emitting device according to the present invention for achieving the above object,

A sapphire substrate on which at least one groove is formed;

A reflective layer formed on a lower surface of the sapphire substrate to fill the groove, and having a higher reflectance than the sapphire substrate;

An n-type nitride semiconductor layer formed on the sapphire substrate;

An active layer and a p-type nitride semiconductor layer sequentially formed on a predetermined region of the n-type nitride semiconductor layer; And

And p-type electrodes and n-type electrodes formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively.

Here, the reflective layer is characterized in that at least one selected from the group consisting of Ag, Al, Rh, Au, Cr and Pt.

The reflective layer is formed using at least one selected from the group consisting of electron beam deposition, sputtering, thermal deposition, chemical vapor deposition, printing and spin coating.

In addition, the groove is characterized in that formed by a femtosecond laser.

In addition, the groove has a diameter of 5 μm to 900 μm.

The groove may be formed to have a depth from a lower surface of the sapphire substrate to 5 m to an interface between the sapphire substrate and the n-type nitride semiconductor layer.

In addition, when there are a plurality of grooves, the grooves may be formed spaced apart from each other by a predetermined interval.

In addition, the manufacturing method of the gallium nitride-based semiconductor light emitting device according to the present invention for achieving the above object,

Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the sapphire substrate;

Mesa-etching a portion of the p-type nitride semiconductor layer, the active layer and the n-type nitride semiconductor layer to expose a portion of the n-type nitride semiconductor layer;

Forming a p-type electrode and an n-type electrode on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively;

Forming at least one groove under the sapphire substrate; And

Forming a thermally conductive layer having a higher thermal conductivity than the sapphire substrate on a lower surface of the sapphire substrate so as to fill the grooves.

The method may further include forming a reflective layer having a higher reflectivity than the sapphire substrate along the lower surface of the sapphire substrate including the groove.

The thermally conductive layer is formed of at least one selected from the group consisting of Ag, Cu, Pt, SiC, AlN, solder paste, and a thermally conductive polymer.

In addition, the thermal conductive layer is formed using at least one selected from the group consisting of electron beam deposition, sputtering, thermal deposition, chemical vapor deposition, printing and spin coating.

In addition, another method of manufacturing a gallium nitride-based semiconductor light emitting device according to the present invention for achieving the above object,

Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the sapphire substrate;

Mesa-etching a portion of the p-type nitride semiconductor layer, the active layer and the n-type nitride semiconductor layer to expose a portion of the n-type nitride semiconductor layer;

Forming a p-type electrode and an n-type electrode on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively;

Forming at least one groove under the sapphire substrate; And

Forming a reflective layer on the lower surface of the sapphire substrate so as to fill the groove, the reflecting layer having a higher reflectance than the sapphire substrate.

The reflective layer may be formed of at least one selected from the group consisting of Ag, Al, Rh, Au, Cr, and Pt.

The reflective layer is formed using at least one selected from the group consisting of electron beam deposition, sputtering, thermal deposition, chemical vapor deposition, printing and spin coating.

In addition, the groove is characterized in that formed by a femtosecond laser.

In addition, the groove is characterized in that it is formed to have a diameter of 5 ㎛ to 900 ㎛.

The groove may be formed to have a depth from a lower surface of the sapphire substrate to 5 m to an interface between the sapphire substrate and the n-type nitride semiconductor layer.

In addition, when there are a plurality of grooves, the grooves may be formed to be spaced apart from each other by a predetermined interval.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.

<First Embodiment>

Structure of Gallium Nitride Semiconductor Light Emitting Device

A gallium nitride based semiconductor light emitting device according to a first embodiment of the present invention will be described in detail with reference to FIGS. 2 and 3.

2 and 3 are cross-sectional views showing a gallium nitride-based semiconductor light emitting device according to a first embodiment of the present invention.

First, as shown in FIG. 2, the gallium nitride based semiconductor light emitting device 200 according to the first embodiment of the present invention includes a sapphire substrate 201 and a sapphire substrate 201 for growing a GaN semiconductor material. ), The n-type nitride semiconductor layer 202, the active layer 203, and the p-type nitride semiconductor layer 204 are sequentially formed on the p-type nitride semiconductor layer 204 and the active layer 203. The partial region of the n-type nitride semiconductor layer 202 is exposed by exposing the partial region.

The n-type and p-type nitride semiconductor layers 202 and 204 and the active layer 203 may be In _X Al _Y Ga _1-XY N composition formulas, where 0 ≦ X, 0 ≦ Y, and X + Y ≦ 1. It may be a semiconductor material having a). More specifically, the n-type nitride semiconductor layer 202 may be formed of a GaN layer or a GaN / AlGaN layer doped with n-type conductive impurities, and the p-type nitride semiconductor layer 204 may be formed of p-type conductive impurities. It may be made of a doped GaN layer or a GaN / AlGaN layer. In addition, the active layer 203 may be formed of a GaN / InGaN layer having a multi-quantum well structure.

A p-type electrode 206 is formed on the p-type nitride semiconductor layer 204 that is not etched by the mesa etching process, and an n-type electrode 207 on the n-type nitride semiconductor layer 202 exposed through the etching process. ) Is formed. The p-type and n-type electrodes 206 and 207 may be made of a metal material such as Au or Cr / Au. In addition, before the p-type electrode 206 is formed on the upper surface of the p-type nitride semiconductor layer 204, a transparent electrode 205 made of ITO may be formed.

In the present invention, at least one groove 208 is formed under the sapphire substrate 201. A heat conductive layer 209 having a higher thermal conductivity than the sapphire substrate 201 is formed on the bottom surface of the sapphire substrate 201 so as to fill the groove 208. The thermally conductive layer 209 filling the grooves 208 serves to allow the heat generated inside the light emitting device 200 to be well discharged to the outside through the sapphire substrate 201. As a result, the heat dissipation capability of the sapphire substrate 201 can be improved, so that the characteristics of the device can be prevented from being degraded by heat.

In this case, the groove 208 may be formed of an inductive coupled plasma (ICP), reactive ion etching (RIE), femto-second laser, or the like, and is most preferably formed of the femtosecond laser. .

The femtosecond laser is 10 less than the pulse emission time of 1 picosecond (pico-second) ^- is approximately in the 13 10 ^-15 seconds. In general, when an ultra-short pulsed laser beam, such as the femtosecond laser, is emitted to a workpiece, a multi photon phenomenon occurs in the constituent lattice of the material, whereby the photons are formed around the constituent lattice during the excitation of atoms. Since the incident pulse is shorter than the time for transferring heat to the workpiece, it is possible to prevent a decrease in processing accuracy due to thermal diffusion and physical and chemical changes of the material while the workpiece is being processed, thereby enabling high precision machining. In addition, when processing the femtosecond laser, by-products such as particles generated by the processing is hardly generated, there is no need for the by-product removal step such as ultrasonic cleaning.

When the grooves 208 are formed by such femtosecond laser processing, the cross-sectional shape of the grooves 208 may have a cylindrical shape as shown in FIG. 2, depending on the processing method thereof. It may have a trapezoidal shape as shown. In addition, the cross-sectional shape of the groove 208 is not limited to the above-described shape, and may be variously modified within the technical scope of the present invention.

The diameter of the groove 208 is preferably 5 ㎛ to 900 ㎛. Here, when the diameter of the groove 208 is smaller than 5 μm, it is difficult to sufficiently obtain the effect of improving the heat dissipation capacity of the sapphire substrate 201 as described above. In addition, since the groove 208 is difficult to form larger than 900 ㎛ in consideration of the general size of the sapphire substrate 201, it is preferable to have a diameter in the above range.

The groove 208 is preferably formed to have a depth from a lower surface of the sapphire substrate 201 to an interface between the sapphire substrate 201 and the n-type nitride semiconductor layer 202. In this case, when the depth of the groove 208 is smaller than 5 μm, heat generated in the gallium nitride based semiconductor light emitting device 200 is formed in the heat conductive layer formed in the groove 208 through the sapphire substrate 201 ( It may be difficult to reach up to 209, so it is preferred that it is formed to a depth as described above. In addition, when there are a plurality of grooves 208, the grooves 208 are preferably formed spaced apart from each other, as shown in the figure.

As the thermal conductive layer 209 having higher thermal conductivity than the sapphire substrate 201, at least one selected from the group consisting of Ag, Cu, Pt, SiC, AlN, solder paste, and a thermally conductive polymer may be used. have. In addition, the thermally conductive layer 209 is from the group consisting of electron beam (e-beam) deposition, sputtering, thermal deposition, chemical vapor deposition, printing (printing) and spin coating (spin coating) It may be formed using at least one selected.

Method of manufacturing gallium nitride-based semiconductor light emitting device

Hereinafter, a method of manufacturing a gallium nitride-based semiconductor light emitting device according to a first embodiment of the present invention will be described.

4A through 4E are cross-sectional views illustrating processes of manufacturing a gallium nitride based semiconductor light emitting device according to a first embodiment of the present invention.

First, as shown in FIG. 4A, an n-type nitride semiconductor layer 202, an active layer 203, and a p-type nitride semiconductor layer 204 are formed on a sapphire substrate 201 for growing GaN-based semiconductor materials. Form in turn.

Here, the n-type and p-type nitride semiconductor layers 202 and 204 and the active layer 203, as described above, In _X Al _Y Ga _1-XY N composition formula (where 0≤X, 0≤Y, X + Y ≦ 1). More specifically, the n-type nitride semiconductor layer 202 may be formed of a GaN layer or a GaN / AlGaN layer doped with n-type conductive impurities, for example, Si, Ge , Sn and the like are used, and preferably Si is mainly used. In addition, the p-type nitride semiconductor layer 204 may be formed of a GaN layer or a GaN / AlGaN layer doped with a p-type conductive impurity, for example, Mg, Zn, Be Etc., and Mg is mainly used preferably. In addition, the active layer 203 may be formed of a GaN / InGaN layer having a multi-quantum well structure.

As described above, the n-type and p-type nitride semiconductor layers 202 and 204 and the active layer 203 may be generally formed through a process such as metal organic chemical vapor deposition (MOCVD).

Next, as illustrated in FIG. 4B, some of the p-type nitride semiconductor layer 204, the active layer 203, and the n-type nitride semiconductor layer 202 are mesa-etched to form the n-type nitride semiconductor layer 202. Reveals part of Thereafter, a transparent electrode 205 made of ITO is formed on the p-type nitride semiconductor layer 204 that is not etched by the mesa etching process.

Next, as shown in FIG. 4C, the p-type electrode 206 and the n-type electrode 207 on the n-type nitride semiconductor layer 202 exposed by the transparent electrode 205 and the mesa etching process, respectively. To form. The p-type and n-type electrodes 206 and 207 may be formed using a metal such as Au or Au / Cr.

Next, as shown in FIG. 4D, at least one groove 208 is formed in the lower portion of the sapphire substrate 201. The groove 208 may be formed by a femtosecond laser as described above, and may be formed to have various cross-sectional shapes, including a cylinder shape as shown in FIG. 4D, according to a processing method thereof. In addition, the groove 208 is preferably formed to have a diameter of 5 ㎛ to 900 ㎛. In addition, the grooves 208 may be formed to have a depth from a lower surface of the sapphire substrate 201 to an interface between the sapphire substrate 201 and the n-type nitride semiconductor layer 202. When there are a plurality of grooves 208, the grooves 208 may be formed to be spaced apart from each other by a predetermined interval.

Thereafter, as shown in FIG. 4E, a thermal conductive layer 209 having a higher thermal conductivity than the sapphire substrate 201 is formed on the bottom surface of the sapphire substrate 201 so as to fill the grooves 208. The thermally conductive layer 209 is preferably formed of at least one selected from the group consisting of Ag, Cu, Pt, SiC, AlN, solder paste, and a thermally conductive polymer. In addition, the thermal conductive layer 209 may be formed using at least one selected from the group consisting of electron beam deposition, sputtering, thermal deposition, chemical vapor deposition, printing and spin coating. Here, the heat generated inside the light emitting device 200 may be well discharged to the outside through the sapphire substrate 201 by the heat conductive layer 209 filling the groove 208.

According to the first embodiment of the present invention as described above, by forming the heat conductive layer 209 in the groove 208 formed under the sapphire substrate 201, it is possible to increase the heat dissipation capacity of the sapphire substrate 201 Therefore, the characteristic fall of the element by heat can be prevented.

Second Embodiment

Structure of Gallium Nitride Semiconductor Light Emitting Device

A gallium nitride-based semiconductor light emitting device according to a second embodiment of the present invention will be described with reference to FIG. 5. However, the description of the same parts as the first embodiment of the configuration of the second embodiment will be omitted, and only the configuration that is different from the second embodiment will be described in detail.

5 is a cross-sectional view illustrating a gallium nitride based semiconductor light emitting device according to a second embodiment of the present invention.

As shown in FIG. 5, the gallium nitride based semiconductor light emitting device 300 according to the second embodiment of the present invention has the same configuration as that of the gallium nitride based semiconductor light emitting device 200 according to the first embodiment. However, it differs from the first embodiment only in that the layer formed on the lower surface of the sapphire substrate 301 so as to fill the groove 308 is the reflective layer 309 instead of the thermal conductive layer 209.

That is, the gallium nitride-based semiconductor light emitting device 300 according to the second embodiment of the present invention includes a sapphire substrate 301, an n-type nitride semiconductor layer 302 and an active layer sequentially formed on the sapphire substrate 301. 303 and a p-type nitride semiconductor layer 304, wherein partial regions of the p-type nitride semiconductor layer 304 and the active layer 303 are removed by a mesa etching process. It has a structure in which a part of the upper surface of 302 is exposed. The transparent electrode 305 and the p-type electrode 306 are sequentially formed on the p-type nitride semiconductor layer 304 which is not etched by the mesa etching process, and the n-type nitride semiconductor layer exposed through the etching process is exposed. An n-type electrode 307 is formed on 302.

Here, at least one groove 308 is formed under the sapphire substrate 301, and has a higher reflectance than the sapphire substrate 301 on the lower surface of the sapphire substrate 301 to fill the groove 308. The reflective layer 309 is formed.

As the reflective layer 309, at least one selected from the group consisting of Ag, Al, Rh, Au, Cr, and Pt may be used. In addition, the reflective layer 309 may be formed using at least one selected from the group consisting of electron beam deposition, sputtering, thermal deposition, chemical vapor deposition, printing and spin coating. The reflective layer 309 may reflect light from the active layer 303 toward the sapphire substrate 301, thereby increasing the luminous efficiency of the light emitting device 300.

Method of manufacturing gallium nitride-based semiconductor light emitting device

Hereinafter, a method of manufacturing a gallium nitride-based semiconductor light emitting device according to a second embodiment of the present invention will be described with reference to FIG. 5.

The method for manufacturing a gallium nitride semiconductor light emitting device according to the second embodiment of the present invention is the same as in the first embodiment described above until the step of forming the groove 308 in the lower portion of the sapphire substrate 301.

That is, in the second embodiment of the present invention, after forming the groove 308 in the lower portion of the sapphire substrate 301, the sapphire substrate (on the lower surface of the sapphire substrate 301 to bury the groove 308) A reflective layer 309 having a higher reflectance than that of 301 is formed. As described above, the reflective layer 309 is preferably formed of at least one selected from the group consisting of Ag, Al, Rh, Au, Cr, and Pt, and may be electron beam deposition, sputtering, thermal deposition, or chemical vapor deposition. It may be formed using at least one selected from the group consisting of, printing and spin coating.

According to the second embodiment of the present invention as described above, by forming the reflective layer 309 in the groove 308 formed under the sapphire substrate 301, the light from the active layer 303 to the sapphire substrate 301 By causing reflection, the luminous efficiency of the device can be increased.

Third Embodiment

Structure of Gallium Nitride Semiconductor Light Emitting Device

A gallium nitride based semiconductor light emitting device according to a third embodiment of the present invention will be described with reference to FIG. 6. However, the description of the same parts as those of the first embodiment of the configuration of the third embodiment will be omitted, and only the configuration that differs from the third embodiment will be described in detail.

6 is a cross-sectional view illustrating a gallium nitride based semiconductor light emitting device according to a third embodiment of the present invention.

As shown in FIG. 6, the gallium nitride based semiconductor light emitting device 400 according to the third embodiment of the present invention has the same structure as that of the gallium nitride based semiconductor light emitting device 200 according to the first embodiment. However, the first embodiment described above only between the sapphire substrate 401 on which the groove 408 is formed and the heat conductive layer 410 is further provided with a reflective layer 409 having a higher reflectivity than the sapphire substrate 401. Is different from

The gallium nitride-based semiconductor light emitting device 400 according to the third embodiment of the present invention reflects light directed from the active layer 403 to the sapphire substrate 401, and thus, a reflective layer 409 capable of increasing the luminous efficiency of the device. ) And the heat conductive layer 410 that can improve the heat dissipation capability of the sapphire substrate 401, the effects obtained in the above-described first and second embodiments can be simultaneously obtained.

In FIG. 6, reference numeral 402, which is not described in FIG. 6, denotes an n-type nitride semiconductor layer, 404 denotes a p-type nitride semiconductor layer, 405 denotes a transparent electrode, 406 denotes a p-type electrode, and 407 denotes an n-type electrode.

Method of manufacturing gallium nitride-based semiconductor light emitting device

Hereinafter, a method of manufacturing a gallium nitride-based semiconductor light emitting device according to a third embodiment of the present invention will be described with reference to FIGS. 7A to 7C.

7A to 7C are cross-sectional views of processes for describing a method of manufacturing a gallium nitride based semiconductor light emitting device according to a third embodiment of the present invention.

In the method for manufacturing a gallium nitride-based semiconductor light emitting device according to the third embodiment of the present invention, first, as shown in FIG. 7A, the process of forming the grooves 408 in the lower portion of the sapphire substrate 401 is described above. Same as in the first embodiment.

Next, as shown in FIG. 7B, a reflective layer 409 having a higher reflectivity than the sapphire substrate 401 is formed along the lower surface of the sapphire substrate 401 including the grooves 408.

Then, as shown in FIG. 7C, a heat conductive layer 410 having higher thermal conductivity than the sapphire substrate 401 is formed on the bottom surface of the sapphire substrate 401 on which the reflective layer 409 is formed to fill the groove 408. ).

According to the third embodiment of the present invention as described above, by sequentially forming the reflective layer 409 and the thermal conductive layer 410 in the groove 408 formed under the sapphire substrate 401, the sapphire substrate from the active layer 403 By reflecting the light directed to 401, the luminous efficiency of the device can be increased, and the heat dissipation capability of the sapphire substrate 401 can be improved, thereby preventing the deterioration of the device characteristics due to heat.

Although the preferred embodiments of the present invention have been described in detail above, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

As described above, according to the gallium nitride-based semiconductor light emitting device and the method for manufacturing the same, the grooves are formed in the lower portion of the sapphire substrate, and the heat conduction layer and the reflective layer are formed in the grooves, thereby improving the heat release capability of the sapphire substrate. It is possible to prevent the deterioration of the characteristics of the device due to heat, to cause light reflection from the active layer to the substrate, and to increase the luminous efficiency of the device.

Claims (14)

A sapphire substrate on which at least one groove is formed; A reflective layer formed on a lower surface of the sapphire substrate to fill the groove, and having a higher reflectance than the sapphire substrate; An n-type nitride semiconductor layer formed on the sapphire substrate; An active layer and a p-type nitride semiconductor layer sequentially formed on a predetermined region of the n-type nitride semiconductor layer; And A gallium nitride-based semiconductor light emitting device comprising a p-type electrode and an n-type electrode formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively. The method of claim 1, The reflective layer is gallium nitride-based semiconductor light emitting device, characterized in that at least one selected from the group consisting of Ag, Al, Rh, Au, Cr and Pt. The method of claim 1, And the reflective layer is formed using at least one selected from the group consisting of electron beam deposition, sputtering, thermal deposition, chemical vapor deposition, printing and spin coating. The method of claim 1, The groove is formed of a gallium nitride-based semiconductor light emitting device, characterized in that the femtosecond laser. The method of claim 1, Gallium nitride-based semiconductor light emitting device, characterized in that the diameter of the groove is 5 ㎛ to 900 ㎛. The method of claim 1, The groove is formed of a gallium nitride-based semiconductor light emitting device, characterized in that the depth from the bottom surface of the sapphire substrate from 5 ㎛ to the interface between the sapphire substrate and the n-type nitride semiconductor layer. The method of claim 1, And a plurality of the grooves, wherein the grooves are formed to be spaced apart from each other by a predetermined interval. Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the sapphire substrate; Mesa-etching a portion of the p-type nitride semiconductor layer, the active layer and the n-type nitride semiconductor layer to expose a portion of the n-type nitride semiconductor layer; Forming a p-type electrode and an n-type electrode on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively; Forming at least one groove under the sapphire substrate; And A method of manufacturing a gallium nitride-based semiconductor light emitting device comprising the step of forming a reflective layer having a higher reflectivity than the sapphire substrate, the lower surface of the sapphire substrate to fill the groove. The method of claim 8, And the reflective layer is formed of at least one selected from the group consisting of Ag, Al, Rh, Au, Cr, and Pt. The method of claim 8, The reflective layer is formed using at least one selected from the group consisting of electron beam deposition, sputtering, thermal deposition, chemical vapor deposition, printing and spin coating. The method of claim 8, The groove is a method of manufacturing a gallium nitride-based semiconductor light emitting device, characterized in that formed by a femtosecond laser. The method of claim 8, The groove is a method of manufacturing a gallium nitride-based semiconductor light emitting device, characterized in that formed to have a diameter of 5 ㎛ to 900 ㎛. The method of claim 8, The groove is formed from a lower surface of the sapphire substrate to a depth from 5 μm to the interface between the sapphire substrate and the n-type nitride semiconductor layer. The method of claim 8, And a plurality of the grooves, wherein the grooves are formed to be spaced apart from each other by a predetermined interval.

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