KR100718405B1 - 주물의 횡방향 입자 크기 제어 방법, 주조 주상 제품과 및 액체 금속 냉각식 방향성 응고 방법 - Google Patents

주물의 횡방향 입자 크기 제어 방법, 주조 주상 제품과 및 액체 금속 냉각식 방향성 응고 방법 Download PDF

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KR100718405B1
KR100718405B1 KR1020000061539A KR20000061539A KR100718405B1 KR 100718405 B1 KR100718405 B1 KR 100718405B1 KR 1020000061539 A KR1020000061539 A KR 1020000061539A KR 20000061539 A KR20000061539 A KR 20000061539A KR 100718405 B1 KR100718405 B1 KR 100718405B1
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South Korea
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casting
particle
particles
particle size
mold
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Expired - Fee Related
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KR1020000061539A
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English (en)
Korean (ko)
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KR20010040128A (ko
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지글리오티마이클프란시스자비에르이세
황쉬친
피터슨로저존
페록치리크랜포드
Original Assignee
제너럴 일렉트릭 캄파니
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D1/00Treatment of fused masses in the ladle or the supply runners before casting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D21/00Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor
    • B22D21/02Casting exceedingly oxidisable non-ferrous metals, e.g. in inert atmosphere
    • B22D21/025Casting heavy metals with high melting point, i.e. 1000 - 1600 degrees C, e.g. Co 1490 degrees C, Ni 1450 degrees C, Mn 1240 degrees C, Cu 1083 degrees C
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/04Influencing the temperature of the metal, e.g. by heating or cooling the mould
    • B22D27/045Directionally solidified castings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/20Measures not previously mentioned for influencing the grain structure or texture; Selection of compositions therefor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/52Alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Turbine Rotor Nozzle Sealing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020000061539A 1999-10-22 2000-10-19 주물의 횡방향 입자 크기 제어 방법, 주조 주상 제품과 및 액체 금속 냉각식 방향성 응고 방법 Expired - Fee Related KR100718405B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/422,179 US6343641B1 (en) 1999-10-22 1999-10-22 Controlling casting grain spacing
US09/422,179 1999-10-22

Publications (2)

Publication Number Publication Date
KR20010040128A KR20010040128A (ko) 2001-05-15
KR100718405B1 true KR100718405B1 (ko) 2007-05-14

Family

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KR1020000061539A Expired - Fee Related KR100718405B1 (ko) 1999-10-22 2000-10-19 주물의 횡방향 입자 크기 제어 방법, 주조 주상 제품과 및 액체 금속 냉각식 방향성 응고 방법

Country Status (5)

Country Link
US (1) US6343641B1 (enExample)
EP (1) EP1093872B1 (enExample)
JP (1) JP2001246457A (enExample)
KR (1) KR100718405B1 (enExample)
DE (1) DE60017523T2 (enExample)

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US7343960B1 (en) 1998-11-20 2008-03-18 Rolls-Royce Corporation Method and apparatus for production of a cast component
US6932145B2 (en) 1998-11-20 2005-08-23 Rolls-Royce Corporation Method and apparatus for production of a cast component
EP1437426A1 (de) * 2003-01-10 2004-07-14 Siemens Aktiengesellschaft Verfahren zum Herstellen von einkristallinen Strukturen
EP1561536A1 (de) * 2004-02-03 2005-08-10 Siemens Aktiengesellschaft Reparatur-Lotverfahren zum Reparieren eines Bauteils, welches ein Basismaterial mit einer gerichteten Mikrostruktur umfasst
US20080257517A1 (en) * 2005-12-16 2008-10-23 General Electric Company Mold assembly for use in a liquid metal cooled directional solidification furnace
JP4528995B2 (ja) * 2007-08-02 2010-08-25 国立大学法人東北大学 Siバルク多結晶インゴットの製造方法
US20090314452A1 (en) * 2008-06-24 2009-12-24 Garlock Robert M Method of casting metal articles
US20100147481A1 (en) * 2008-12-15 2010-06-17 General Electric Company Methods of manufacturing casted articles, and systems
US9493357B2 (en) * 2011-11-28 2016-11-15 Sino-American Silicon Products Inc. Method of fabricating crystalline silicon ingot including nucleation promotion layer
JP6136210B2 (ja) * 2012-11-21 2017-05-31 株式会社Ihi 鋳型及びその製造方法、精密鋳造装置並びに精密鋳造方法
JP6604507B2 (ja) * 2015-11-19 2019-11-13 日立金属株式会社 タービン翼およびその製造方法
DE102019110580A1 (de) * 2019-04-24 2020-10-29 Nemak, S.A.B. De C.V. Vorrichtung und Verfahren zur Entnahme mindestens eines Kühlelementes aus einem wenigstens teilweise entformten Gussteil, Verfahren zur Einbringung mindestens eines Kühlelementes in einen Formkern einer Gussteilform, Kühlelement sowie Gussteil
EP3842556B1 (en) * 2019-12-27 2023-07-05 Fundación Azterlan Inoculation process for grain refinement of a nickel base alloy
US11859266B2 (en) * 2021-02-26 2024-01-02 Lawrence Livermore National Security, Llc Castable high temperature nickel-rare earth element alloys
TWI801846B (zh) * 2021-04-21 2023-05-11 台灣雨虹有限公司 單方向晶粒金屬材料及其製造方法
KR102773965B1 (ko) * 2024-06-13 2025-02-26 국립부경대학교 산학협력단 가스터빈 블레이드 제조방법

Citations (1)

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Publication number Priority date Publication date Assignee Title
JPS59207894A (ja) * 1983-04-21 1984-11-26 エイイ−ピ−エルシ− 方向性のある凝固を行う鋳造物の製造方法

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US3763926A (en) * 1971-09-15 1973-10-09 United Aircraft Corp Apparatus for casting of directionally solidified articles
US3972367A (en) 1975-06-11 1976-08-03 General Electric Company Process for forming a barrier layer on ceramic molds suitable for use for high temperature eutectic superalloy casting
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Non-Patent Citations (1)

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일본공개특허 소59-207894호

Also Published As

Publication number Publication date
DE60017523T2 (de) 2005-12-29
EP1093872B1 (en) 2005-01-19
US6343641B1 (en) 2002-02-05
EP1093872A1 (en) 2001-04-25
KR20010040128A (ko) 2001-05-15
DE60017523D1 (de) 2005-02-24
JP2001246457A (ja) 2001-09-11

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