KR100712219B1 - Both-sides Emmitting Organic Electroluminescence Device And The Method For Fabricating Of The Same - Google Patents

Abstract

The present invention, by using a conductive substrate, can block the external light and transmitted light to improve the image display quality, high temperature process, strong against external impact and prevent static electricity in the double-sided light emitting organic electroluminescent device and its manufacturing method It is about.

The present invention is a conductive substrate; A first insulating film disposed on one surface of the conductive substrate; A first lower electrode on the first insulating layer; A first organic layer disposed on the first lower electrode; A first upper electrode on the first organic layer; A second insulating film disposed on the other surface of the conductive substrate; A second lower electrode on the second insulating layer; A second organic layer disposed on the second lower electrode; And a second upper electrode positioned on the second organic layer.

Double sided emission, organic light emitting device

Description

Two-sided organic electroluminescent device and its manufacturing method {Both-sides Emmitting Organic Electroluminescence Device And The Method For Fabricating Of The Same}

1 and 2 are cross-sectional views of a double-sided organic light emitting display device according to a first embodiment of the present invention.

3 to 5 are cross-sectional views of the double-sided organic light emitting display device according to the second embodiment of the present invention.

<Description of Symbols for Major Symbols in Drawings>

100: conductive substrate 110, 210: insulating film

120,220 semiconductor layer 130,230 gate insulating film

140,240: gate electrode 150,250: interlayer insulating film

151,152,251,252: source / drain electrodes

160,260: planarization film 170,270: reflection film

175,275: first and second lower electrodes

180,280: first and second organic layer

190,290: first and second upper electrodes

195: inorganic film

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a double-sided light emitting organic electroluminescent device and a method of manufacturing the same. More specifically, by using a conductive substrate, external light and transmitted light can be blocked to improve image display quality, and a high temperature process is possible. In addition, the present invention relates to a double-sided light emitting organic electroluminescent device which is resistant to external shock and prevents static electricity.

Conventional double-sided organic light emitting display device is composed of a first electrode, an organic film layer and a second electrode on a glass substrate. The glass substrate may include a semiconductor layer, a gate electrode, and a source / drain electrode. Subsequently, an element is formed on another glass substrate as described above, and the two completed elements are joined to complete a conventional double-sided organic light emitting diode.

However, since the substrate is glass, the conventional double-sided light emitting organic electroluminescent device as described above has a difficulty in processing at a low temperature and may cause an electrostatic problem. In addition, there is a disadvantage in that a polarizer or a black matrix must be further used to prevent external light.

In addition, the light emitted from the upper element affects the lower element through the glass substrate, so that the contrast is lowered and the glass substrate is easily damaged by external impact.

Accordingly, the present invention is to solve the above-mentioned disadvantages and problems of the prior art, by using a conductive substrate, it is possible to increase the image display quality by blocking external light and transmitted light, high temperature process is possible, SUMMARY OF THE INVENTION An object of the present invention is to provide a double-sided light emitting organic electroluminescent device and a method for manufacturing the same that are resistant to impact and prevent static electricity.

The object of the present invention is a conductive substrate; A first insulating film disposed on one surface of the conductive substrate; A first lower electrode on the first insulating layer; A first organic layer disposed on the first lower electrode; A first upper electrode on the first organic layer; A second insulating film disposed on the other surface of the conductive substrate; A second lower electrode on the second insulating layer; A second organic layer disposed on the second lower electrode; And a second upper electrode positioned on the second organic film layer.

In addition, the object of the present invention is to provide a conductive substrate; Forming a first insulating film on one surface of the conductive substrate; Forming a first lower electrode on the first insulating film; Forming a first organic layer on the first lower electrode; Forming a first upper electrode on the first organic layer; Forming an inorganic film including the first lower electrode, the first organic layer, and the first upper electrode; Forming a second insulating film on the other surface of the conductive substrate; Forming a second lower electrode on the second insulating film; Forming a second organic layer on the second lower electrode; Forming a second upper electrode on the second organic layer; It is also achieved by a method for manufacturing a double-sided light emitting organic electroluminescent device comprising the step of removing the inorganic film.

In addition, the object of the present invention is to provide a first conductive substrate; Forming a first insulating film on the first conductive substrate; Forming a first lower electrode on the first insulating film; Forming a first organic layer on the first lower electrode; Forming a first upper electrode on the first organic layer; Providing a second conductive substrate; Forming a second insulating film on the second conductive substrate; Forming a second lower electrode on the second insulating film; Forming a second organic layer on the second lower electrode; Forming a second upper electrode on the second organic layer; It is also achieved by a method for manufacturing a double-sided light emitting organic electroluminescent device comprising the step of bonding the first conductive substrate and the second conductive substrate.

Details of the above object and technical configuration of the present invention and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention. In the drawings, the length, thickness, etc. of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout the specification.

The double-sided organic light emitting display device of the present invention can form the double-sided organic light emitting device of the present invention by forming the organic light emitting device on each side of the conductive substrate using one conductive substrate. In addition, the organic light emitting diodes may be formed on one conductive substrate to bond the conductive substrates to form the double-sided organic light emitting diodes of the present invention.

1 is a cross-sectional view of a double-emitting organic light emitting display device according to a first embodiment of the present invention.

Referring to FIG. 1, a conductive substrate 100 is provided. The conductive substrate 100 may use stainless steel (SUS). By using SUS as described above, the image display quality can be improved by blocking external light and transmitted light, and a high temperature process is possible, and it is also resistant to external impact and can prevent static electricity.

Next, a first insulating layer 110 is formed on the conductive substrate 100. The first insulating layer 110 may be formed of a silicon oxide layer, a silicon nitride layer, or a multilayer thereof, and may be an insulating layer that insulates the conductive substrate 100 from layers later formed thereon.

Subsequently, a semiconductor layer 120 is formed on the first insulating layer 110. The semiconductor layer 120 may be an amorphous silicon film or a polycrystalline silicon film obtained by crystallizing an amorphous silicon film. A gate insulating layer 130 is formed on the semiconductor layer 120. The gate insulating layer 130 may be a silicon oxide layer, a silicon nitride layer, or a multilayer thereof.

Subsequently, the gate electrode material 140 is stacked on the gate insulating layer 130 and patterned to form the gate electrode 140 in a region corresponding to the semiconductor layer 120.

An interlayer insulating layer 150 is formed on the conductive substrate 100. The interlayer insulating layer 150 may be a silicon oxide film, a silicon nitride film, or a multilayer thereof. Contact holes exposing the semiconductor layer 120 are formed on the interlayer insulating layer 150. A conductive film is stacked on the conductive substrate 100 on which the contact holes are formed, and then patterned to form source / drain electrodes 151 and 152. The source and drain electrodes 151 and 152 are connected to the semiconductor layer 120 through the contact hole.

The planarization layer 160 is formed on the source / drain electrodes 151 and 152 and the interlayer insulating layer 150, and the planarization layer 160 is etched to form via holes. The reflective film 170 is formed on the planarization film 160. The reflective film 170 may be Ag, Al, or an alloy thereof.

Subsequently, a transparent conductive film such as ITO is stacked on the conductive substrate 100, and then the transparent conductive film is patterned to form a first lower electrode 171 including the reflective film 170. The first lower electrode 171 may use ITO or IZO.

A pixel defining layer 175 having an opening is formed on the entire surface of the conductive substrate 100. The first organic layer 180 is formed in the opening. The first organic layer 180 may include at least an organic light emitting layer, and may further include any one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. Thereafter, a first upper electrode 190 is formed on the entire surface of the conductive substrate 100. The first upper electrode 190 may be used as Mg, Ag, Al, Ca, and an alloy thereof having a transparent and low work function.

Thereafter, the inorganic layer 195 is formed to include the thin film transistor, the first lower electrode, the organic layer, and the first upper electrode. The inorganic film 195 is formed of one material selected from silicon oxide or silicon nitride based on the protection of the device during the subsequent process.

Next, referring to FIG. 2, a second insulating film 210 is formed on the other surface of the conductive substrate. The insulating film 210 may be formed of a silicon oxide film, a silicon nitride film, or multiple layers thereof.

The semiconductor layer 220 is formed on the insulating layer 210. The semiconductor layer 220 may be an amorphous silicon film or a polycrystalline silicon film obtained by crystallizing an amorphous silicon film. A gate insulating layer 230 is formed on the semiconductor layer 220. The gate insulating layer 230 may be a silicon oxide layer, a silicon nitride layer, or a multilayer thereof.

Subsequently, the gate electrode material is formed on the gate insulating layer 230 and patterned to form the gate electrode 240 in a region corresponding to the semiconductor layer 220.

An interlayer insulating layer 250 is formed on the conductive substrate 200. The interlayer insulating film 250 may be a silicon oxide film, a silicon nitride film, or a multilayer thereof. Contact holes exposing the semiconductor layer 220 are formed on the interlayer insulating layer 250. A conductive film is stacked on the conductive substrate 200 on which the contact holes are formed, and then patterned to form source / drain electrodes 251 and 252. The source and drain electrodes 251 and 252 are connected to the semiconductor layer 220 through the contact hole.

The planarization layer 260 is formed on the source / drain electrodes 251 and 252 and the interlayer insulating layer 250, and the via layer is etched to form via holes. The reflective film 270 is formed on the planarization film 260. The reflective film 270 may be Ag, Al, or an alloy thereof.

Subsequently, a transparent conductive film such as ITO is stacked on the conductive substrate 200, and then the transparent conductive film is patterned to form a second lower electrode 271 including the reflective film 270. The second lower electrode 271 may use ITO or IZO.

A pixel defining layer 275 having an opening is formed on the entire surface of the conductive substrate 200. The second organic layer 280 is formed in the opening. The second organic layer 280 may include at least an organic light emitting layer, and may further include any one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. Thereafter, a second upper electrode 290 is formed on the entire surface of the conductive substrate 200. The second upper electrode 290 may be used as Mg, Ag, Al, Ca, and an alloy thereof having a transparent and low work function.

Thereafter, the inorganic layer 195 is removed to complete the double-sided organic light emitting display device according to the first embodiment of the present invention.

As described above, by using the SUS as the conductive substrate, it is possible to block external light and transmitted light to increase the image display quality, to enable a high temperature process, and also to be resistant to external impact and to prevent static electricity.

3 and 4 are cross-sectional views of the double-sided organic light emitting display device according to the second embodiment of the present invention.

Referring to FIG. 3, a first conductive substrate 300 is provided. The first conductive substrate 300 may use stainless steel (SUS). By using SUS as described above, the image display quality can be improved by blocking external light and transmitted light, and a high temperature process is possible, and it is also resistant to external impact and can prevent static electricity.

A first insulating layer 310 is formed on the first conductive substrate 300. The first insulating layer 310 may be formed of a silicon oxide layer, a silicon nitride layer, or multiple layers thereof, and may be an insulating layer that insulates the conductive substrate 300 from layers later formed thereon.

The semiconductor layer 320 is formed on the first insulating layer 310. The semiconductor layer 320 may be an amorphous silicon film or a polycrystalline silicon film obtained by crystallizing an amorphous silicon film. A gate insulating layer 330 is formed on the semiconductor layer 320. The gate insulating layer 330 may be a silicon oxide layer, a silicon nitride layer, or a multilayer thereof.

Subsequently, a gate electrode material 340 is formed on the gate insulating layer 330 by stacking and patterning the gate electrode material on the region corresponding to the semiconductor layer 320.

An interlayer insulating layer 350 is formed on the first conductive substrate 300. The interlayer insulating film 350 may be a silicon oxide film, a silicon nitride film, or a multilayer thereof. Contact holes exposing the semiconductor layer 320 are formed on the interlayer insulating layer 350. A conductive film is stacked on the conductive substrate 300 on which the contact holes are formed, and then patterned to form source / drain electrodes 351 and 352. The source and drain electrodes 351 and 352 are connected to the semiconductor layer 320 through the contact hole.

The planarization layer 360 is formed on the source / drain electrodes 351 and 352 and the interlayer insulating layer 350, and the planarization layer 360 is etched to form via holes. The reflective film 370 is formed on the planarization film 360. The reflective film 370 may be Ag, Al, or an alloy thereof.

Subsequently, a transparent conductive film such as ITO is stacked on the first conductive substrate 300, and then the transparent conductive film is patterned to form a first lower electrode 371 including the reflective film 370. The first lower electrode 371 may use ITO or IZO.

A pixel defining layer 375 having an opening is formed on the entire surface of the first conductive substrate 300. The first organic layer 380 is formed in the opening. The first organic layer 380 may include at least an organic light emitting layer, and may further include any one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. Thereafter, a first upper electrode 390 is formed on the entire surface of the first conductive substrate 300. The first upper electrode 390 may be used as Mg, Ag, Al, Ca, and an alloy thereof having a transparent and low work function.

Next, referring to FIG. 4, a second conductive substrate 400 is provided. The second conductive substrate 400 may use SUS (Steel Use Stainless) in the same manner as the first conductive substrate. By using SUS as described above, the image display quality can be improved by blocking external light and transmitted light, and a high temperature process is possible, and it is also resistant to external impact and can prevent static electricity.

A second insulating layer 410 is formed on the second conductive substrate 400. The second insulating film 410 may be formed of a silicon oxide film, a silicon nitride film, or a multilayer thereof, and may be an insulating film that insulates the second conductive substrate 400 from later formed layers.

The semiconductor layer 420 is formed on the second insulating layer 410. The semiconductor layer 420 may be an amorphous silicon film or a polycrystalline silicon film obtained by crystallizing an amorphous silicon film. A gate insulating layer 430 is formed on the semiconductor layer 420. The gate insulating layer 430 may be a silicon oxide layer, a silicon nitride layer, or a multilayer thereof.

Subsequently, the gate electrode material is stacked on the gate insulating layer 430 and patterned to form the gate electrode 440 in a region corresponding to the semiconductor layer 420.

An interlayer insulating layer 450 is formed on the second conductive substrate 400. The interlayer insulating layer 450 may be a silicon oxide film, a silicon nitride film, or a multilayer thereof. Contact holes exposing the semiconductor layer 420 are formed on the interlayer insulating layer 450. A conductive film is stacked on the conductive substrate 400 on which the contact holes are formed, and then patterned to form source / drain electrodes 451 and 452. The source and drain electrodes 451 and 452 are connected to the semiconductor layer 420 through the contact hole.

A planarization layer 460 is formed on the source / drain electrodes 451 and 452 and the interlayer insulating layer 450, and the planarization layer 460 is etched to form via holes. The reflective film 470 is formed on the planarization film 460. The reflective film 470 may be Ag, Al, or an alloy thereof.

Subsequently, a transparent conductive film such as ITO is stacked on the second conductive substrate 400, and then the transparent conductive film is patterned to form a second lower electrode 471 including the reflective film 470. The second lower electrode 471 may use ITO or IZO.

A pixel defining layer 475 having an opening is formed on the entire surface of the second conductive substrate 400. The second organic layer 480 is formed in the opening. The second organic layer 480 may include at least an organic light emitting layer, and may further include any one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. Thereafter, a second upper electrode 490 is formed on the entire surface of the second conductive substrate 400. The second upper electrode 490 may be used as Mg, Ag, Al, Ca, and an alloy thereof having a transparent and low work function.

5, the first conductive substrate and the second conductive substrate are bonded to each other using a double-sided tape or an adhesive to complete a double-sided organic light emitting display device according to a second embodiment of the present invention.

As described above, by using the conductive substrate made of SUS, a high temperature process is possible without difficulty of having a low temperature process, and no electrostatic problem occurs.

In addition, the image display quality can be improved by blocking external light and transmitted light from the upper element to the lower element, and there is an advantage that the external impact is not easily damaged.

Although the present invention has been shown and described with reference to the preferred embodiments as described above, it is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

Therefore, the double-sided organic light emitting display device and the manufacturing method thereof according to the present invention can increase the image display quality by preventing external light and transmitted light, and can have a high temperature process, are resistant to external impact, and can prevent static electricity.

Claims (10)

Conductive substrate; A first insulating film disposed on one surface of the conductive substrate; A first lower electrode on the first insulating layer; A first organic layer disposed on the first lower electrode; A first upper electrode on the first organic layer; A second insulating film disposed on the other surface of the conductive substrate; A second lower electrode on the second insulating layer; A second organic layer disposed on the second lower electrode; And And a second upper electrode positioned on the second organic film layer. The method of claim 1, The conductive substrate is a double-sided organic light emitting device, characterized in that further comprising using one substrate or two substrates. The method of claim 1, And the first and second lower electrodes are formed of a reflective film and a transparent conductive film. The method of claim 1, The conductive substrate is a manufacturing method of a double-sided organic light emitting device, characterized in that using SUS. Providing a conductive substrate; Forming a first insulating film on one surface of the conductive substrate; Forming a first lower electrode on the first insulating film; Forming a first organic layer on the first lower electrode; Forming a first upper electrode on the first organic layer; Forming an inorganic film including the first lower electrode, the first organic layer, and the first upper electrode; Forming a second insulating film on the other surface of the conductive substrate; Forming a second lower electrode on the second insulating film; Forming a second organic layer on the second lower electrode; Forming a second upper electrode on the second organic layer; A method of manufacturing a double-sided light emitting organic electroluminescent device comprising the step of removing the inorganic film. The method of claim 5, The conductive substrate is a manufacturing method of a double-sided organic light emitting device, characterized in that using SUS. The method of claim 5, The first electrode is a manufacturing method of a double-sided organic light emitting device, characterized in that consisting of a reflective film and a transparent conductive film. Providing a first conductive substrate; Forming a first insulating film on the first conductive substrate; Forming a first lower electrode on the first insulating film; Forming a first organic layer on the first lower electrode; Forming a first upper electrode on the first organic layer; Providing a second conductive substrate; Forming a second insulating film on the second conductive substrate; Forming a second lower electrode on the second insulating film; Forming a second organic layer on the second lower electrode; Forming a second upper electrode on the second organic layer; And bonding the first conductive substrate and the second conductive substrate to each other. The method of claim 8, The conductive substrate is a manufacturing method of a double-sided organic light emitting device, characterized in that using SUS. The method of claim 8, The first electrode is a manufacturing method of a double-sided organic light emitting device, characterized in that consisting of a reflective film and a transparent conductive film.

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