KR100710450B1 - 샤워 헤드부를 구비한 처리 장치로의 가스 도입 방법 - Google Patents
샤워 헤드부를 구비한 처리 장치로의 가스 도입 방법 Download PDFInfo
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- KR100710450B1 KR100710450B1 KR1020047000768A KR20047000768A KR100710450B1 KR 100710450 B1 KR100710450 B1 KR 100710450B1 KR 1020047000768 A KR1020047000768 A KR 1020047000768A KR 20047000768 A KR20047000768 A KR 20047000768A KR 100710450 B1 KR100710450 B1 KR 100710450B1
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- gas
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- diffusion chamber
- diffusion
- shower head
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (6)
- 피처리체에 대하여 소정의 처리를 실시하기 위한 처리 공간을 갖는 처리 용기와, 원료 가스 또는 환원 가스가 공급되는 동시에 공급된 가스를 확산시켜서 상기 처리 공간내에 공급하는 분리 구획된 복수의 확산실을 갖는 샤워 헤드부를 구비한 처리 장치로의 가스 도입 방법에 있어서,상기 원료 가스 및 상기 환원 가스와 상기 복수의 확산실의 조합 중, 상기 환원 가스가 공급되는 확산실의 압력과 상기 원료 가스가 공급되는 확산실의 압력의 차압이 보다 커지는 조합을 선택하는 선택 공정과,상기 선택 공정에 있어서 선택된 조합에 기초하여, 상기 각 가스를 각각의 확산실로 공급하는 공급 공정을 구비한 것을 특징으로 하는샤워헤드부를 구비한 처리 장치로의 가스 도입 방법.
- 피처리체에 대하여 소정의 처리를 실시하기 위한 처리 공간을 갖는 처리 용기와, 원료 가스 또는 환원 가스가 공급되는 동시에 공급된 가스를 확산시켜서 상기 처리 공간내로 공급하는 분리 구획된 복수의 확산실을 갖는 샤워 헤드부를 구비한 처리 장치로의 가스 도입 방법에 있어서,상기 원료 가스 및 상기 환원 가스와 상기 복수의 확산실의 조합 중, 상기 환원 가스가 공급되는 확산실의 컨덕턴스와 상기 원료 가스가 공급되는 확산실의 컨덕턴스의 컨덕턴스 차이가 보다 작아지는 조합을 선택하는 선택 공정과,상기 선택 공정에 있어서 선택된 조합에 기초하여, 상기 각 가스를 각각의 확산실로 공급하는 공급 공정을 구비한 것을 특징으로 하는샤워헤드부를 구비한 처리 장치로의 가스 도입 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 일정량의 상기 환원 가스에 대한 상기 원료 가스의 유량과 성막 속도의 관계는, 상기 원료 가스의 유량이 0으로부터 상기 확산실로 공급되는 유량까지의 범위에서 상기 성막 속도는 최대값을 갖는 것을 특징으로 하는샤워헤드부를 구비한 처리 장치로의 가스 도입 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 복수의 확산실은 상하 방향으로 2단으로 배열되어 있고,상기 선택 공정에 있어서, 상단의 확산실로 상기 환원 가스가 도입되고 하단의 확산실로 상기 원료 가스가 도입되는 조합이 선택되는 것을 특징으로 하는샤워헤드부를 구비한 처리 장치로의 가스 도입 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 원료 가스는 TiCl4 가스이고,상기 환원 가스는 NH3 가스인 것을 특징으로 하는샤워헤드부를 구비한 처리 장치로의 가스 도입 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 원료 가스는 불활성 가스와 함께 확산실에 도입되도록 되어 있고,상기 환원 가스는 수소 가스와 함께 확산실로 도입되도록 되어 있는 것을 특징으로 하는샤워헤드부를 구비한 처리 장치로의 가스 도입 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00143781 | 2002-05-17 | ||
JP2002143781A JP4151308B2 (ja) | 2002-05-17 | 2002-05-17 | 処理装置のガス導入方法 |
PCT/JP2003/006158 WO2003097898A1 (fr) | 2002-05-17 | 2003-05-16 | Procede permettant d'introduire un gaz dans un appareil de traitement comportant une partie pomme de douche |
Publications (2)
Publication Number | Publication Date |
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KR20050004762A KR20050004762A (ko) | 2005-01-12 |
KR100710450B1 true KR100710450B1 (ko) | 2007-04-24 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020047000768A KR100710450B1 (ko) | 2002-05-17 | 2003-05-16 | 샤워 헤드부를 구비한 처리 장치로의 가스 도입 방법 |
Country Status (4)
Country | Link |
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US (1) | US20060105104A1 (ko) |
JP (1) | JP4151308B2 (ko) |
KR (1) | KR100710450B1 (ko) |
WO (1) | WO2003097898A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130098016A (ko) * | 2012-02-27 | 2013-09-04 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 포함하는 박막 증착 장치 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050223986A1 (en) * | 2004-04-12 | 2005-10-13 | Choi Soo Y | Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition |
CN101107379B (zh) * | 2005-06-24 | 2010-12-01 | 东京毅力科创株式会社 | 气体处理方法 |
US8069817B2 (en) * | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
JP2008311457A (ja) * | 2007-06-15 | 2008-12-25 | Renesas Technology Corp | 半導体装置の製造方法 |
US8216640B2 (en) * | 2009-09-25 | 2012-07-10 | Hermes-Epitek Corporation | Method of making showerhead for semiconductor processing apparatus |
JP5772941B2 (ja) * | 2013-12-25 | 2015-09-02 | 東レ株式会社 | プラズマcvd装置 |
US9472379B2 (en) * | 2014-06-20 | 2016-10-18 | Applied Materials, Inc. | Method of multiple zone symmetric gas injection for inductively coupled plasma |
JP6495875B2 (ja) | 2016-09-12 | 2019-04-03 | 株式会社東芝 | 流路構造及び処理装置 |
US10755900B2 (en) * | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3468859B2 (ja) * | 1994-08-16 | 2003-11-17 | 富士通株式会社 | 気相処理装置及び気相処理方法 |
KR100331544B1 (ko) * | 1999-01-18 | 2002-04-06 | 윤종용 | 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드 |
JP4487338B2 (ja) * | 1999-08-31 | 2010-06-23 | 東京エレクトロン株式会社 | 成膜処理装置及び成膜処理方法 |
JP4178776B2 (ja) * | 2001-09-03 | 2008-11-12 | 東京エレクトロン株式会社 | 成膜方法 |
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2002
- 2002-05-17 JP JP2002143781A patent/JP4151308B2/ja not_active Expired - Lifetime
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2003
- 2003-05-16 KR KR1020047000768A patent/KR100710450B1/ko active IP Right Grant
- 2003-05-16 US US10/514,149 patent/US20060105104A1/en not_active Abandoned
- 2003-05-16 WO PCT/JP2003/006158 patent/WO2003097898A1/ja active Application Filing
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20130098016A (ko) * | 2012-02-27 | 2013-09-04 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 포함하는 박막 증착 장치 |
Also Published As
Publication number | Publication date |
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JP2003342737A (ja) | 2003-12-03 |
WO2003097898A1 (fr) | 2003-11-27 |
KR20050004762A (ko) | 2005-01-12 |
JP4151308B2 (ja) | 2008-09-17 |
US20060105104A1 (en) | 2006-05-18 |
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