KR100702596B1 - Ultrasonic device for cleaning and ultrasonic cleaning system using the same - Google Patents

Abstract

The present invention relates to an ultrasonic cleaning device and an ultrasonic cleaning system using the same. More particularly, a plurality of beam diffusion piezoelectric elements generating ultrasonic waves by shrinkage expansion are bonded to one side of a diffusion layer composed of farfield and nearfield. By adjusting the diffusion angle according to the width of the anode piece, the ultrasonic device is configured so that the ultrasonic waves passing through the diffusion layer are evenly distributed on the upper or lower surfaces of the wafer, FPD, etc., which are rotated and rotated in the far field. Therefore, the present invention relates to an ultrasonic cleaning apparatus and an ultrasonic cleaning system using the same, which can reduce and minimize the damage of the wafer, thereby minimizing damage to the wafer.

Semiconductor, FPD, Ultrasound, Piezoelectric Element for Beam Diffusion, Diffusion Layer, Far Field, Single Sheet, Cleaning Equipment

Description

Ultrasonic cleaning device and ultrasonic cleaning system using the same {ULTRASONIC DEVICE FOR CLEANING AND ULTRASONIC CLEANING SYSTEM USING THE SAME}

Figure 1a is a cross-sectional view showing a conventional single wafer type semiconductor cleaning ultrasonic device,

FIG. 1B is a diagram illustrating a pattern damage generation pattern and a sound pressure distribution diagram due to the high and low sound pressure levels of FIG. 1A;

Figure 2a is a perspective view showing a conventional ultrasonic device for cleaning FPD,

Figure 2b is a view showing the unbalanced sound pressure distribution of Figure 2a,

3 is a view showing the concept of the FPD cleaning farfield ultrasonic apparatus according to the present invention,

Figure 4 is a perspective view showing the concept of a wafer type farfield ultrasonic apparatus for cleaning semiconductors according to the present invention,

 5A is a cross-sectional view illustrating a structure of a beam diffusion piezoelectric element of an ultrasonic cleaning device and an ultrasonic cleaning system using the same according to the present invention;

5B is a top view of FIG. 5A;

Figure 6a is a cross-sectional view showing the basic principle of the ultrasonic device for cleaning according to the present invention,

FIG. 6B is a top view of FIG. 6A;

7A is a cross-sectional view showing the structure of an ultrasonic device for cleaning having a tubular shape according to the present invention;

FIG. 7B is a view showing the plane and the side of FIG. 7A,

8A is a cross-sectional view showing the structure of an ultrasonic device for cleaning having a cylindrical shape according to the present invention;

FIG. 8B is a view showing the plane and the side of FIG. 8A,

9A is a cross-sectional view showing the structure of an ultrasonic device for cleaning having a disc shape according to the present invention;

9B is a top view of FIG. 9A,

10 is a cross-sectional view illustrating a structure of an ultrasonic cleaning device and an ultrasonic cleaning system using the same, which are installed on the lower surface of the semiconductor wafer and the object to be cleaned according to the present invention and are cleaned through the bottom surface of the wafer and the object to be cleaned.

<Description of the symbols for the main parts of the drawings>

1: anode piece 2: anode part

3: cathode 10: piezoelectric element for beam diffusion

11: nearfield 12: farfield

13: diffusion layer 16: housing

17: To be cleaned 31: Power line

60: amplifier

The present invention relates to an ultrasonic cleaning device and an ultrasonic cleaning system using the same. More particularly, a plurality of beam diffusion piezoelectric elements generating ultrasonic waves by shrinkage expansion are bonded to one side of a diffusion layer composed of farfield and nearfield. By adjusting the diffusion angle according to the width of the anode piece, the ultrasonic device is configured so that the ultrasonic waves passing through the diffusion layer are evenly distributed on the upper or lower surfaces of the wafer, FPD, etc., which are rotated and rotated in the far field. Therefore, the present invention relates to an ultrasonic cleaning apparatus and an ultrasonic cleaning system using the same, which can reduce and minimize the damage of the wafer, thereby minimizing damage to the wafer.

One of the most basic techniques of the semiconductor manufacturing process is the cleaning technique. The semiconductor manufacturing process goes through several steps to form the surface of the wafer.In the semiconductor wafer and semiconductor manufacturing equipment where a predetermined process is performed at each step, various contaminants are generated and remain. The manufacturing equipment should be cleaned to proceed with the process. Therefore, cleaning technology aims to remove various contaminants generated during the semiconductor manufacturing process by using physical and chemical methods.

In this regard, the chemical method is to remove surface contamination by washing with water, etching, and a redox reaction, and to use various chemicals and gases. In chemical methods, the adhered particles are removed with pure or chemical cleaning liquids, and the organics are dissolved with solvents, with oxidizing acids, or carbonized in oxygen plasma.In some cases, the surface is etched to expose new clean surfaces. do.

In another method, which is a physical method, the deposit is peeled off by ultrasonic energy, brushed off, or the deposit is removed using high pressure water. In general, physical methods are effectively cleaned by combining with chemical techniques.

That is, ultrasonic cleaning is to remove contaminants attached to the object to be cleaned using physical (ultrasound) and chemical means (chemical cleaning solution), and to prevent the removed contaminants from reattaching. Physical phenomena by ultrasonic waves means cavitation of the ultrasonic waves (cavity). The cavitation phenomenon is a phenomenon in which microbubbles are generated and extinguished by ultrasonic pressure when energy of ultrasonic waves propagates in a liquid. With very high pressures (tens of hundreds to hundreds) and high temperatures (hundreds to thousands).

Such phenomena repeat the generation and disappearance in a very short time (one tenths of thousands to one hundred thousandths of a second). The shock wave washes in a short time until the inside of the object to be cleaned contained in the liquid is not visible deeply.

In practice, in addition to the impact energy caused by the cavitation, the stirring effect due to the radial pressure of the ultrasonic wave itself, the thermal action, and the like synergize with the detergent to achieve a high cleaning effect.

Ultrasonic cleaning is primarily used for cleaning or rinsing objects, such as glass substrates for liquid crystal display (LCD) devices, semiconductor wafers, magnetic disks for data storage, and the like. In a conventional ultrasonic cleaning system, the object to be cleaned is introduced into a cleaning bath containing a cleaning liquid to which ultrasonic waves are applied from a diaphragm activated by an ultrasonic vibrator. Ultrasonic waves apply vibrational energy to particles on the object to be cleaned so that particles and other contaminants can be effectively removed from the object to be cleaned.

In recent years, as semiconductor devices have been highly integrated, the pattern to be implemented on a wafer has also become very small. Therefore, the importance of the cleaning process is becoming more and more important because the pattern on the wafer causes defects in the semiconductor device even by very fine particles.

Generally, wafer cleaning is performed using ultrapure water (cleaning liquid), a brush, and ultrasonic waves.

1A shows a conventional single wafer type ultrasonic cleaning apparatus, wherein when the wafer 14 rotates, the upper ultrasonic apparatus 90 generates ultrasonic waves in the cleaning liquid, or drops the cleaning water 20 into the quartz material. The ultrasonic load is due to the rod 101. However, the conventional single wafer ultrasonic cleaning device has a disadvantage that the distribution of the sound pressure 15 is not constant and damage occurs as the pattern becomes weak. In addition, the appearance of damage according to the height of the sound pressure 15 is shown in Figure 1b.

Figure 2a also shows a conventional FPD cleaning ultrasonic apparatus showing the cleaning power decrease and pattern damage due to the non-uniformity of the sound pressure, the non-uniform sound pressure distribution is shown in Figure 2b.

That is, in the course of the cleaning operation, the variation of ultrasonic intensity is large due to the instantaneous fluctuation of cleaning conditions such as operating frequency, cleaning water condition, power consumption, cooling condition, etc. Since there has been a fatal problem that causes the overall damage, the development of ultrasonic devices for semiconductor and FPD (Flat Panel Display) cleaning that can reduce the wafer damage by evenly distributed the negative pressure distribution.

The present invention has been made to solve the above problems, an object of the present invention is a plurality of beam diffusion piezoelectric elements for generating ultrasonic waves by shrinkage expansion is bonded to one side of the diffusion layer consisting of farfield and nearfield, The diffusion angle is adjusted according to the width of the anode piece so that the ultrasonic waves passing through the diffusion layer are distributed evenly on the far field and are evenly distributed on the upper surface of the wafer, FPD, etc., which is a rotating object to be rotated. By reducing the deviation to a minimum, to provide a cleaning ultrasonic apparatus and an ultrasonic cleaning system using the same to minimize the damage to the object to be cleaned.

In addition, another object of the present invention is a plurality of beam diffusion piezoelectric elements for generating ultrasonic waves by shrinkage expansion of the piezoelectric element is bonded to one side of the diffusion layer consisting of farfield and nearfield, the diffusion angle according to the width of the anode piece By adjusting the ultrasonic device so that the sound pressure passing through the diffusion layer is diffused and superimposed in the far field and distributed evenly on the lower surface of the rotating object, the variation in sound pressure is minimized, thereby minimizing wafer damage. An ultrasonic cleaning device capable of cleaning and an ultrasonic cleaning system using the same are provided.

The present invention has the following features to achieve the above object.

According to an aspect of the present invention, there is provided an ultrasonic apparatus for cleaning a semiconductor wafer and FPD, comprising: a diffusion layer that protrudes and protrudes inside a housing having a hollow tubular shape; A plurality of beam diffusion piezoelectric elements bonded to the diffusion layer, the anode part being deposited at one end and the cathode part being deposited at the other end to generate ultrasonic waves; Cooling holes formed to penetrate in the longitudinal direction on both sides of the diffusion layer; An amplification unit bonded to the bottom surface of the diffusion layer; A power supply line supplying power to the beam diffusion piezoelectric element; Characterized in that comprises a.

Another embodiment of the present invention provides an ultrasonic device for cleaning a semiconductor wafer and an FPD, comprising: a diffusion layer that protrudes and protrudes inside a housing having a hollow cylindrical shape; A plurality of beam diffusion piezoelectric elements bonded to the diffusion layer, the anode part being deposited at one end and the cathode part being deposited at the other end to generate ultrasonic waves; Cooling holes formed to penetrate in the longitudinal direction on both sides of the diffusion layer; A power supply line supplying power to the beam diffusion piezoelectric element; Characterized in that comprises a.

In addition, according to another embodiment of the present invention, an ultrasonic device for cleaning a semiconductor wafer and FPD, comprising: a disk-shaped diffusion layer having a housing formed on an outer circumferential surface thereof; An annular cooling hole formed in the inner peripheral surface of the diffusion layer; A plurality of beam diffusion piezoelectric elements bonded to an upper surface of the diffusion layer, one end of which is deposited on an anode, and the other end of which is deposited on a cathode; An amplifier connected to the bottom surface of the diffusion layer; A power supply line supplying power to the beam diffusion piezoelectric element; Characterized in that comprises a.

In addition, according to another embodiment of the present invention, there is provided an ultrasonic apparatus for cleaning a semiconductor wafer and FPD, comprising: a rotating table having an empty interior; A diffusion layer positioned inside the rotary table and placed thereon with the object to be cleaned; A plurality of beam diffusion piezoelectric elements bonded to a lower surface of the diffusion layer, the anode part being deposited on one side and the cathode part being deposited on the other side to generate ultrasonic waves; A power supply line supplying power to the beam diffusion piezoelectric element; Characterized in that comprises a.

The present invention having such a feature will be more clearly described through the preferred embodiment accordingly. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 1a is a cross-sectional view showing a conventional single wafer type semiconductor cleaning ultrasonic device, Figure 1b is a view showing the pattern damage generation and sound pressure distribution diagram by the high and low pressure of Figure 1a, Figure 2a is a conventional ultrasonic device for FPD cleaning 2B is a diagram illustrating an unbalanced sound pressure distribution of FIG. 2A, FIG. 3 is a view illustrating a concept of a farfield ultrasonic device for FPD cleaning according to the present invention, and FIG. 4 is another semiconductor cleaning according to the present invention. 5 is a sectional view showing the structure of the ultrasonic wave cleaning device and the beam diffusion piezoelectric element of the ultrasonic cleaning system using the same according to the present invention, and FIG. 6A is a cross-sectional view illustrating the basic principle of a cleaning ultrasonic apparatus according to the present invention, FIG. 6B is a plan view of FIG. 6A, and FIG. 7A is a tubular shape according to the present invention. 7B is a sectional view showing the plane and the side of FIG. 7A, and FIG. 8A is a sectional view showing the structure of the ultrasonic cleaning device having a cylindrical shape according to the present invention, and FIG. 8B. 8A is a view showing a plane and a side of FIG. 8A, FIG. 9A is a cross-sectional view showing the structure of an ultrasonic cleaning device having a disc shape according to the present invention, FIG. 9B is a plan view of FIG. 9A, and FIG. 10 is according to the present invention. A cross-sectional view showing the structure of an ultrasonic cleaning device installed on the bottom surface of a semiconductor wafer and the object to be cleaned and the ultrasonic cleaning system using the same.

As shown, the ultrasonic cleaning device and the ultrasonic cleaning system 100 using the same according to the present invention, in the ultrasonic device for cleaning the semiconductor wafer and the flat panel display (FPD), a plurality of anode pieces (1) on one surface And a plurality of beam diffusion piezoelectric elements 10 forming the cathode portion 3 on the other surface are bonded to one side of the diffusion layer 13, and are contracted and expanded by the beam diffusion piezoelectric element 10 at the top of the rotating wafer. Ultrasonic waves are generated to clean the object to be cleaned 17. Ultrasonic waves diffuse through and overlap the far field 12 region of the diffusion layer 13 to form an even negative pressure, thereby increasing the cleaning efficiency during wafer cleaning. An ultrasonic device capable of reducing damage, and includes a diffusion layer 13, a beam diffusion piezoelectric element 10, a cooling hole 50, an amplifier 60, and a power supply line 31.

The diffusion layer 13 connects to the inside of the housing 16 having a square tubular shape having an empty inside to form a protruding portion.

In addition, the diffusion layer 13 is composed of a near field 11 having ultrasonic straightness and a far field 12 in which the ultrasonic waves are diffused and overlapped, and the near field 11 is finished in the diffusion layer 13 and the far field is finished. The distance N = D ² -λ ² / 4λ in the section where (12) starts, where D represents the width of the anode piece 1, and the farfield (far sound field) after the near field (near sound field) 11 is finished. The diffusion angle of sound outside the near-field spreading in the region (12) is represented by sin γ ₀ = 1.2λ / D. In other words, as the width of the anode piece 1 decreases, the diffusion angle sin γ ₀ increases, so that the far-field sound field due to the superposition of ultrasonic waves diffused on the object to be cleaned 17 can be adjusted, and the far field 12 By varying the thickness of the) you can adjust the degree of overlap. In addition, the diffusion layer 13 may be formed of a material such as quartz (quartz), STS (stainless steel), Teflon (Teflon), Al (aluminum), steel, or the like.

The beam diffusion piezoelectric element 10 has a configuration in which one end is joined to a portion protruding from the diffusion layer 13. The beam diffusion piezoelectric element 10 forms an anode part 2 formed on one surface with a plurality of anode pieces 1 spaced apart from each other, and a cathode part 3 corresponding to the anode part 2 on the other surface. ). In addition, the beam diffusion piezoelectric element 10 has a positive electrode portion 2 formed of a plurality of positive electrode pieces 1 on one surface thereof, and a plurality of positive electrodes including a shape in which the negative electrode portion 3 is formed on the entire surface of the other surface. A positive electrode portion (2) consisting of a piece (1) is formed on the upper surface, but is formed in the form of a cathode portion (3) extending from the lower surface to the side or the upper surface and one anode piece (1) and the negative electrode portion (3) on both ends A plurality of beam diffusion piezoelectric elements 10 may be applied and formed in various forms, and one or more beam diffusion piezoelectric elements 10 may be applied to one surface of the diffusion layer 13.

In addition, the anode piece 1, the beam diffusion piezoelectric element 10, and the diffusion layer 13 may be applied in various forms such as circular, triangular, rectangular, parallelogram, and the like, and also include an ultrasonic device including the same. It may have various shapes such as square, circle, triangle, rectangle, parallelogram.

The cooling holes 50 are formed on both sides of the beam diffusion piezoelectric element 10, respectively, and have a shape in which the cooling holes 50 are circularly penetrated in the longitudinal direction on both sides of the diffusion layer 13. In addition, the cooling hole 50 may be formed in a variety of forms, such as circular, square, hexagonal, may be excluded from the configuration according to the user's arbitrary.

The amplification unit 60 is bonded to the bottom surface of the diffusion layer 13, has a form such as a conical type and an exponential type, and may be excluded from the configuration according to the user's arbitrary.

The power supply line 31 supplies power to the beam diffusion piezoelectric element 10 bonded to the diffusion layer 13.

Further, the ultrasonic cleaning device 200 according to another embodiment of the present invention is a ultrasonic device for cleaning a semiconductor wafer and the object to be cleaned, such as a flat panel display (FPD), a plurality of anode pieces (1) formed on one surface In addition, the beam diffusion piezoelectric element 10 forming the cathode portion 3 on the other side is bonded to one side of the diffusion layer 13, and ultrasonic waves are contracted and expanded by the beam diffusion piezoelectric element 10 at the upper end of the rotating wafer. The ultrasonic wave is diffused and superimposed while passing through the far field 12 region of the diffusion layer 13 to improve cleaning efficiency and reduce damage to the pattern. An ultrasonic device, which includes a diffusion layer 13, a beam diffusion piezoelectric element 10, a cooling hole 50, and a power supply line 31.

The diffusion layer 13 is connected to the inside of the housing 16 having a hollow cylindrical shape to form a protruding portion.

In addition, the diffusion layer 13 is composed of a near field 11 having ultrasonic straightness and a far field 12 in which the ultrasonic waves are diffused and overlapped, and the near field 11 is finished in the diffusion layer 13 and the far field is finished. The distance N = D ² -λ ² / 4λ in the section where (12) starts, where D represents the width of the anode piece 1, and the farfield 12 region after the near field 11 (near distance) is finished. The diffusion angle of sound outside the near-field diffused at is represented by sin γ ₀ = 1.2λ / D. In other words, as the width of the anode piece 1 decreases, the diffusion angle sin γ ₀ increases, so that the far-field sound field due to the superposition of ultrasonic waves diffused on the object to be cleaned 17 can be adjusted, and the far field 12 By varying the thickness of), the degree of overlap can be controlled. In addition, the diffusion layer 13 may be formed of a material such as quartz (quartz), STS (stainless steel), Teflon (Teflon), Al (aluminum), steel, or the like.

The beam diffusion piezoelectric element 10 has a configuration in which one end is joined to a portion protruding from the diffusion layer 13. The beam diffusion piezoelectric element 10 forms an anode part 2 formed on one surface with a plurality of anode pieces 1 spaced apart from each other, and a cathode part 3 corresponding to the anode part 2 on the other surface. ). In addition, the beam diffusion piezoelectric element 10 has a positive electrode portion 2 formed of a plurality of positive electrode pieces 1 on one surface, and a plurality of positive electrodes, including a form in which the negative electrode portion 3 is formed on the entire other surface. A positive electrode portion (2) consisting of a piece (1) is formed on the upper surface, but is formed in the form of a cathode portion (3) extending from the lower surface to the side or the upper surface and one anode piece (1) and the negative electrode portion (3) on both ends It can be formed and applied in various forms, such as the cylinder of the plurality of beam diffusion piezoelectric elements 10 having, and one or a plurality of such beam diffusion piezoelectric elements 10 can be applied to one surface of the diffusion layer (13).

In addition, the anode piece 1, the beam diffusion piezoelectric element 10, and the diffusion layer 13 may be applied in various forms such as circular, triangular, rectangular, parallelogram, and the like, and also include an ultrasonic device including the same. It may have various shapes such as square, circle, triangle, rectangle, parallelogram.

The cooling holes 50 are formed on both sides of the beam diffusion piezoelectric element 10, respectively, and have a shape in which the cooling holes 50 are circularly penetrated in the longitudinal direction on both sides of the diffusion layer 13. In addition, the cooling hole 50 may be formed in a variety of forms, such as circular, square, hexagonal, may be excluded from the configuration according to the user's arbitrary.

The power supply line 31 supplies power to the beam diffusion piezoelectric element 10 bonded to the diffusion layer 13.

In addition, the ultrasonic cleaning apparatus 300 according to another embodiment of the present invention includes a diffusion layer 13, a cooling hole 50, a beam diffusion piezoelectric element 10, an amplifier 60, a power line 31. do.

The diffusion layer 13 has a disk-shaped shape and forms an annular housing 16 on an outer circumferential surface thereof, and includes a nearfield 11 having ultrasonic straightness and a farfield 12 in which ultrasonic waves overlap and diffuse. However, the distance N = D ² -λ ² / 4λ of the interval in which the nearfield 11 ends and the farfield 12 starts in the diffusion layer 13, D denotes the width of the anode piece 1, The diffusion angle of sound outside the near-field sound field diffused in the farfield 12 region after the near field 11 (near distance) is represented by sin γ ₀ = 1.2λ / D. In other words, as the width of the anode piece 1 decreases, the diffusion angle sin γ ₀ increases, so that the far-field sound field due to the superposition of ultrasonic waves diffused on the object to be cleaned 17 can be adjusted, and the far field 12 By varying the thickness of the) you can adjust the degree of overlap. In addition, the diffusion layer 13 may be formed of a material such as quartz (quartz), STS (stainless steel), Teflon (Teflon), Al (aluminum), steel, or the like.

The beam diffusion piezoelectric element 10 has a shape that is bonded to the upper surface of the diffusion layer 13, that is, the upper end of the near field 11, and has a disk shape having a diameter smaller than that of the diffusion layer 13. The beam diffusion piezoelectric element 10 forms an anode part 2 formed on one surface with a plurality of anode pieces 1 spaced apart from each other, and a cathode part 3 corresponding to the anode part 2 on the other surface. ). In addition, the beam diffusion piezoelectric element 10 has a positive electrode portion 2 formed of a plurality of positive electrode pieces 1 on one surface thereof, and a plurality of positive electrodes including a shape in which the negative electrode portion 3 is formed on the entire surface of the other surface. A positive electrode portion (2) consisting of a piece (1) is formed on the upper surface, but is formed in the form of a cathode portion (3) extending from the lower surface to the side or the upper surface and one anode piece (1) and the negative electrode portion (3) on both ends It can be formed and applied in various forms, such as the cylinder of the plurality of beam diffusion piezoelectric elements 10 having, and one or a plurality of such beam diffusion piezoelectric elements 10 can be applied to one surface of the diffusion layer (13).

In addition, the anode piece 1, the beam diffusion piezoelectric element 10, and the diffusion layer 13 may be applied in various forms such as circular, triangular, rectangular, parallelogram, and the like, and also include an ultrasonic device including the same. It may have various shapes such as square, circle, triangle, rectangle, parallelogram.

The cooling hole 50 has an annular shape and is formed inside the same as the diffusion layer 13. In addition, the cooling hole 50 may be excluded from the configuration according to the user's arbitrary.

The amplification unit 60 is bonded to the lower end of the diffusion layer 13, and is formed in a conical type, an exponential type, and the like which become narrower toward the lower end, and may be excluded from the configuration according to the user's arbitrary.

The power supply line 31 supplies power to the beam diffusion piezoelectric element 10.

In addition, the ultrasonic cleaning apparatus and the ultrasonic cleaning system 400 using the same according to another embodiment of the present invention includes a rotary table 18, a diffusion layer 13, a beam diffusion piezoelectric element 10, a power line 31. do.

The rotary table 18 has a hollow shape. In addition, the semiconductor wafer and the object to be cleaned 17 are mounted on the upper end of the rotating table 18.

The diffusion layer 13 is composed of a nearfield 11 having ultrasonic straightness and a farfield 12 in which the ultrasonic waves are diffused and overlapped, and the nearfield 11 is finished in the diffusion layer 13 and the farfield ( 12 is the distance N = D ² -λ ² / 4λ in the interval, where D represents the width of the anode piece 1, after the near field 11 (near distance) is finished in the far field 12 region The diffusion angle of sound outside the diffuse near field is represented by sin γ ₀ = 1.2λ / D. In other words, as the width of the anode piece 1 decreases, the diffusion angle sin γ ₀ increases, so that the far-field sound field due to the superposition of ultrasonic waves diffused on the object to be cleaned 17 can be adjusted, and the far field 12 By varying the thickness of the) you can adjust the degree of overlap. In addition, the diffusion layer 13 may be formed of a material such as quartz (quartz), STS (stainless steel), Teflon (Teflon), Al (aluminum), steel, or the like.

The beam diffusion piezoelectric element 10 is bonded to the lower surface of the diffusion layer 13 and fixed in a structure parallel to the semiconductor wafer and the object to be cleaned 17. The beam diffusion piezoelectric element 10 forms an anode part 2 formed on one surface with a plurality of anode pieces 1 spaced apart from each other, and a cathode part 3 corresponding to the anode part 2 on the other surface. ).

In addition, the anode piece 1, the beam diffusion piezoelectric element 10, and the diffusion layer 13 may be applied in various forms such as circular, triangular, rectangular, parallelogram, and the like, and also include an ultrasonic device including the same. It may have various shapes such as square, circle, triangle, rectangle, parallelogram.

In this state as described above, the washing water 20 is sprayed between the upper end of the semiconductor wafer and the object to be cleaned 17 and between the diffusion layer 13 and the semiconductor wafer and the object to be cleaned 17. Is cleaned through the lower surface of the object to be cleaned 17 by an ultrasonic device consisting of a diffusion layer 13 and a piezoelectric element 10 provided on the lower surface of the substrate, thereby the effect of the cleaning is easier to prevent damage to the pattern.

The power supply line 31 supplies power to the beam diffusion piezoelectric element 10.

Hereinafter will be described the operation and principle of the preferred embodiment of the present invention having the configuration and structure as described above.

Ultrasonic cleaning device and ultrasonic cleaning system using the same according to the present invention to deposit a positive electrode portion (2) formed on a plurality of anode pieces (1) spaced at a predetermined interval, and to deposit a cathode portion (3) on the other surface The beam diffusion piezoelectric element 10 is bonded to the inside of the cylindrical and tubular diffusion layer 13 having an empty inside. When bonding, the cathode portion 3 of the beam diffusion piezoelectric element 10 and one surface of the diffusion layer 13 are bonded to each other, and power is supplied by a power line 31 connected to the beam diffusion piezoelectric element 10. Receive. In addition, the diffusion layer 13 according to the present invention has a disc shape, and has a structure in which the beam diffusion piezoelectric element 10 is bonded to an upper surface thereof.

Therefore, while the beam diffusion piezoelectric element 10 repeats expansion and contraction, ultrasonic waves are generated, and the generated ultrasonic waves pass through the diffusion layer 13, which is a near field 11 that passes first among the structures of the diffusion layer 13. In the region), the straightness is shown, but in the far field 12, which is passed through, the ultrasonic waves diffuse and overlap each other.

In addition, after passing through the diffusion layer 13, the amplification role of collecting the ultrasonic waves generated by the amplification unit 60 passes through the amplification unit 60 bonded to the bottom of the diffusion layer 13. In addition, the amplifier 60 may be excluded from the user's arbitrary configuration.

As a result, the ultrasonic wave applied to the amplifying unit 60 cleans the wafer being rotated at the lower end of the amplifying unit 60. The ultrasonic wave proceeds to the washing material which is overlapped and rotates in the far field 12 region. Due to this, the variation in the negative pressure is reduced, and the damage of the semiconductor wafer and the object to be cleaned 17 is minimized, thereby preventing and cleaning the damage of the micropattern.

In addition, the ultrasonic cleaning device and the ultrasonic cleaning system 400 using the same according to the present invention deposits a positive electrode portion 2 formed on one surface with a plurality of positive electrode pieces 1 spaced apart from each other, and the negative electrode portion 3 on the other surface. ) Is bonded to one surface of a diffusion layer 13 composed of a farfield 12 extending and superimposed with a nearfield 11 having ultrasonic straightness.

The ultrasonic apparatus configured as described above is mounted and fixed inside the rotating table 18 having an empty inside, and the semiconductor wafer and the object to be cleaned 17 which are rotated on the upper end of the diffusion layer 13 are positioned for beam diffusion. The piezoelectric element 10 generates ultrasonic waves while repeating contraction and expansion, and the generated ultrasonic waves pass through the diffusion layer 13. In the near field 11 region which passes first among the structures of the diffusion layer 13, linearity is improved. In the area of the far field 12 to be passed through, it is diffused and superimposed so as to pass through the bottom surface of the semiconductor wafer and the object to be cleaned 17.

In addition, during the cleaning, the cleaning liquid 20 is sprayed between the upper end of the semiconductor wafer and the object to be cleaned 17 and between the semiconductor wafer and the object to be cleaned 17 and the diffusion layer 13.

Thus, the ultrasonic cleaning apparatus which can be cleaned through the lower surface of the semiconductor wafer and the object to be cleaned 17 becomes easier to prevent damage to the pattern.

As described above, in the present invention, a plurality of beam diffusion piezoelectric elements generating ultrasonic waves by shrinkage expansion are bonded to one side of a diffusion layer composed of farfield and nearfield, and the diffusion angle is adjusted according to the width of the anode piece. Ultrasonic waves passing through the diffusion layer are diffused and overlapped in the far field, and the ultrasonic device is configured to be evenly distributed on the upper or lower surface of the wafer to be rotated. It has the effect of reducing and cleaning.

Claims (9)

In the ultrasonic device for cleaning a semiconductor wafer and FPD, A diffusion layer 13 which protrudes and protrudes inside the housing 16 having a tubular shape having an empty inside; A plurality of beam diffusion piezoelectric elements 10 which are bonded to the diffusion layer 13 and have an anode part 2 deposited on one end and a cathode part 3 deposited on the other end to generate ultrasonic waves; Cooling holes 50 formed to penetrate in the longitudinal direction on both sides of the diffusion layer 13; An amplification part 60 bonded to the bottom surface of the diffusion layer 13; A power line 31 for supplying power to the beam diffusion piezoelectric element 10; Ultrasonic cleaning device and ultrasonic cleaning system using the same, characterized in that comprises a. In the ultrasonic device for cleaning a semiconductor wafer and FPD, A diffusion layer 13 which protrudes and protrudes inside the housing 16 having a hollow cylindrical shape; A plurality of beam diffusion piezoelectric elements 10 which are bonded to the diffusion layer 13 and have an anode part 2 deposited on one end and a cathode part 3 deposited on the other end to generate ultrasonic waves; Cooling holes 50 formed to penetrate in the longitudinal direction on both sides of the diffusion layer 13; A power line 31 for supplying power to the beam diffusion piezoelectric element 10; Ultrasonic cleaning device and ultrasonic cleaning system using the same, characterized in that comprises a. In the ultrasonic device for cleaning a semiconductor wafer and FPD, A disk-shaped diffusion layer 13 having a housing 16 formed on an outer circumferential surface thereof; An annular cooling hole 50 formed in an inner circumferential surface of the diffusion layer 13; A plurality of beam diffusion piezoelectric elements 10 which are bonded to an upper surface of the diffusion layer 13 and have an anode portion 2 deposited at one end and a cathode portion 3 deposited at the other end to generate ultrasonic waves; An amplification part 60 bonded to a lower surface of the diffusion layer 13; A power line 31 for supplying power to the beam diffusion piezoelectric element 10; Ultrasonic cleaning device and ultrasonic cleaning system using the same, characterized in that comprises a. In the ultrasonic device for cleaning a semiconductor wafer and FPD, A rotary table 18 having an empty interior; A diffusion layer (13) positioned inside the rotary table (18) and on which the object to be cleaned (17) is placed; A plurality of beam diffusion piezoelectric elements 10 which are bonded to a lower surface of the diffusion layer 13 and have an anode portion 2 deposited on one side and a cathode portion 3 deposited on the other side to generate ultrasonic waves; A power line 31 for supplying power to the beam diffusion piezoelectric element 10; Ultrasonic cleaning device and ultrasonic cleaning system using the same, characterized in that comprises a. The method according to any one of claims 1 to 4, The diffusion layer 13 is composed of a near field 11 having one side bonded to the cathode portion 3 and having ultrasonic straightness, and a far field 12 in which the ultrasonic waves are diffused to overlap each other, thereby reducing the sound pressure deviation of the ultrasonic waves. Ultrasonic cleaning device and ultrasonic cleaning system using the same, characterized in that for reducing. The method according to any one of claims 1 to 4, The anode portion 2 is composed of a plurality of anode pieces (1) spaced at a predetermined interval, the power is introduced, the anode piece (1) is ultrasonic cleaning, characterized in that to increase the diffusion angle as the width is smaller Apparatus and ultrasonic cleaning system using the same. The method according to any one of claims 1 to 4, The beam diffusion piezoelectric element 10 is formed spaced apart at regular intervals horizontally and longitudinally, and generates ultrasonic waves due to shrinkage expansion of the piezoelectric element, and an ultrasonic cleaning system using the same. The method according to claim 1 or 3, The amplification unit 60 is narrowed toward the bottom from the upper surface to be bonded to the diffusion layer 13 so that ultrasonic waves passing through the diffusion layer 13 is amplified ultrasonic device and ultrasonic cleaning system using the same . The method according to any one of claims 1 to 4, The diffusion layer 13 is an ultrasonic cleaning device and ultrasonic cleaning system using the same, characterized in that the material of any one of quartz, stainless steel, Teflon, aluminum, steel.

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