KR100700860B1 - Cleaning method in CMP process for semiconductor manufacturing - Google Patents
Cleaning method in CMP process for semiconductor manufacturing Download PDFInfo
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- KR100700860B1 KR100700860B1 KR1020050131135A KR20050131135A KR100700860B1 KR 100700860 B1 KR100700860 B1 KR 100700860B1 KR 1020050131135 A KR1020050131135 A KR 1020050131135A KR 20050131135 A KR20050131135 A KR 20050131135A KR 100700860 B1 KR100700860 B1 KR 100700860B1
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000004140 cleaning Methods 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 32
- 239000010937 tungsten Substances 0.000 claims abstract description 32
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 15
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002002 slurry Substances 0.000 claims abstract description 12
- 238000001035 drying Methods 0.000 claims abstract description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 4
- 238000005498 polishing Methods 0.000 claims description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 30
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 238000007517 polishing process Methods 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
도 1은 종래의 텅스텐 CMP를 사용한 텅스텐 플러그 형성 공정을 나타낸 단면도,1 is a cross-sectional view showing a tungsten plug forming process using a conventional tungsten CMP,
도 2는 본 발명의 일실시예에 따른 반도체 소자의 CMP 공정의 세정방법을 나타낸 흐름도.2 is a flowchart illustrating a cleaning method of a CMP process of a semiconductor device according to an embodiment of the present invention.
*도면의 주요부분에 대한 부호의 설명** Explanation of symbols for main parts of drawings *
10 : 웨이퍼 20 : 층간 절연막10
30 : 콘택트 홀 40 : 금속 배리어막30
50 : 텅스텐 막 50: Tungsten Membrane
본 발명은 반도체 소자의 세정방법에 관한 것으로, 더욱 상세하게는 반도체 소자의 제조를 위한 CMP 공정후 세정을 진행하는 과정에서 컨택 저항의 증가를 초래하는 텅스텐의 산화를 방지할 수 있는 반도체 소자의 CMP 공정의 세정방법에 관한 것이다.The present invention relates to a method for cleaning a semiconductor device, and more particularly, CMP of a semiconductor device that can prevent the oxidation of tungsten, which causes an increase in contact resistance during the cleaning process after the CMP process for manufacturing a semiconductor device The washing | cleaning method of a process is related.
일반적으로 텅스텐 플러그(tungsten plug) 공정은 하부 배선, 활성영역, 또는 게이트전극(gate electrode)과의 연결을 위해 층간절연막에 사진식각공정에 의해 콘택홀을 형성한 후, 갭필(gap fill) 특성이 우수한 텅스텐막을 상기 콘택홀에 증착한 다음 화학적기계적연마(chemical mecanical polish, 이하 'CMP'라 한다) 또는 에치백(etch back)을 진행하여 콘택홀 내부의 텅스텐만 남기고 나머지 부분의 텅스텐을 제거하여 플러그를 형성하는 기술이다.In general, a tungsten plug process uses a photolithography process to form a contact hole in an interlayer insulating layer for connection with a lower wiring, an active region, or a gate electrode, and then a gap fill characteristic is obtained. A good tungsten film is deposited on the contact hole, followed by chemical mechanical polishing (CMP) or etch back to remove only the tungsten from the contact hole and remove the remaining tungsten plug. Technology to form.
최근에는 CMP 기술의 발전과 함께 텅스텐의 제거를 CMP로 진행하는 것이 증가하는 추세이다. Recently, with the development of CMP technology, the progress of tungsten removal to CMP is increasing.
도 1은 종래의 텅스텐 CMP를 사용한 텅스텐 플러그 형성 공정을 나타낸 단면도이다.1 is a cross-sectional view showing a tungsten plug forming process using a conventional tungsten CMP.
먼저 소정의 소자가 형성된 웨이퍼(10)상에 층간절연막(20)을 형성하고, 포토리소그래피 및 식각 공정을 통하여 콘택홀(30)을 형성한다.(도 1a) 그리고나서 상기 콘택홀(30)을 포함한 웨이퍼(10)의 전면에 금속 배리어막(barrier metal, 40)을 증착하고나서 텅스텐막(50)을 증착한다.(도 1b) First, the
이후 상기 콘택홀(30) 내부에 있는 텅스텐을 제외하고 나머지 부분의 텅스텐막(50) 및 금속 배리어막(40)을 CMP 공정으로 연마하여 제거한다.(도 1c)Thereafter, except for the tungsten in the
상기 텅스텐 CMP 공정은 산화제가 포함된 슬러리(slurry)를 사용하여 폴리싱 패드(polishing pad)로 텅스텐 막을 연마하는 공정이다. 슬러리는 산화제와 연마제(abrasive)가 포함된 것으로서 산화제는 주로 과산화수소(H2O2) 또는 질산철 (Fe(NO3)2)를 혼합하여 사용하고, 연마제는 실리카(silica) 또는 알루미나(alumina)의 미립자로 구성된다.The tungsten CMP process is a process of polishing a tungsten film with a polishing pad using a slurry containing an oxidizing agent. The slurry contains an oxidant and an abrasive, and the oxidant is mainly mixed with hydrogen peroxide (H 2 O 2 ) or iron nitrate (Fe (NO 3 ) 2 ), and the abrasive is silica or alumina. It consists of fine particles of.
따라서 슬러리 내에 존재하는 산화제는 텅스텐 표면을 화학적으로 산화시켜 이산화텅스텐(WO2)로 만들며, 이것은 텅스텐에 비하여 강도가 약하여 쉽게 연마제에 의하여 기계적으로 제거되는 것이다. 또한 상기 금속 배리어막도 비슷한 메카니즘에 의하여 제거된다.Thus, the oxidant present in the slurry chemically oxidizes the tungsten surface to make tungsten dioxide (WO 2 ), which is weak in strength compared to tungsten and is easily removed mechanically by the abrasive. The metal barrier film is also removed by a similar mechanism.
상기 콘택홀(30) 내부에 있는 텅스텐을 제외하고 나머지 부분의 텅스텐막(50) 및 금속 배리어막(40)이 제거되면 상기 층간절연막(20) 상부와 텅스텐 플러그(50) 상부에 잔류하는 슬러리, 기타 부산물 등을 제거하기 위하여 세정 공정을 진행한다.Slurry remaining on the
일반적으로 상기 세정공정은 CMP 공정과 연속적으로 진행된다. 즉 슬러리 공급을 중단하고 탈이온수(de-ionized water)만을 CMP 연마 테이블에 공급하면서 연마하는 것이다. 이러한 물 연마(water polish)는 대게 CMP 공정진행 시간의 0.1 내지 0.6 배에 해당하는 시간으로 진행한다.In general, the cleaning process is performed continuously with the CMP process. That is, the slurry is stopped and polished while only de-ionized water is supplied to the CMP polishing table. Such water polish usually proceeds at a time corresponding to 0.1 to 0.6 times the CMP process progress time.
상기 물 연마가 완료된 웨이퍼는 최종적으로 암모니아수, 구연산, 묽은 불산(dilute HF)과 같은 케미컬에 의하여 브러시(brush) 세정이 진행된 후 스핀(spin) 세정 및 건조된다.After the water polishing is completed, the wafer is finally brush cleaned by chemicals such as ammonia water, citric acid, and dilute HF, followed by spin cleaning and drying.
그러나 종래의 텅스텐 CMP 공정의 세정공정에서는 물 연마를 진행하는 과정에서 잔류 산화제나 탈이온수가 텅스텐과 접촉하면서 텅스텐 플러그의 표면이 산화 되면서 침식(erosion)될 수 있으며, 슬러리 미세입자 및 CMP 부산물과 같은 이물질의 제거도 효과적이지 못하다는 문제점이 있다.However, in the cleaning process of the conventional tungsten CMP process, the surface of the tungsten plug may be eroded as the residual oxidant or deionized water contacts tungsten during water polishing, and may be eroded as slurry fine particles and CMP by-products. There is a problem that the removal of foreign matter is not effective.
특히 텅스텐과 탈이온수가 만나면 WO2 산화막 이외에도 WO 가 형성되는 경향이 존재하여, 이러한 WO 층은 후속 공정에서 잔류 되어 콘택 저항(contact resistance)을 증가시키고 금속배선의 신뢰성을 감소시키는 문제점이 있다.In particular, when tungsten and deionized water meet, there exists a tendency for WO to be formed in addition to the WO 2 oxide film, so that the WO layer remains in a subsequent process to increase contact resistance and reduce reliability of metal wiring.
따라서 본 발명은 상술한 제반 문제점을 해결하고자 안출된 것으로, 반도체 소자의 제조를 위한 CMP 공정의 CMP 진행 후 세정을 진행하는 과정에서 컨택 저항의 증가를 초래하는 텅스텐의 산화를 방지하여 금속배선의 신뢰성을 향상시킬 수 있는 반도체 소자의 CMP 공정의 세정방법을 제공함에 그 목적이 있다.Accordingly, the present invention has been made to solve the above-mentioned problems, and the reliability of the metal wiring by preventing the oxidation of tungsten, which causes an increase in contact resistance during the process of cleaning after the CMP process of the CMP process for manufacturing a semiconductor device It is an object of the present invention to provide a cleaning method of a CMP process of a semiconductor device capable of improving the efficiency.
상술한 바와 같은 목적을 구현하기 위한 본 발명의 반도체 소자의 CMP 공정의 세정방법은 CMP 공정 후 세정 공정에 있어서, 슬러리에 의한 연마단계; 수소환원수를 CMP 연마 테이블에 공급하면서 연마하는 물 연마 단계; 상기 물 연마 단계가 완료후 암모니아수, 구연산, 묽은 불산 용액에 의한 브러시 세정단계; 스핀 세정 및 건조단계;로 이루어진 것을 특징으로 한다.The cleaning method of the CMP process of the semiconductor device of the present invention for achieving the object as described above, in the cleaning process after the CMP process, polishing step by slurry; A water polishing step of polishing while supplying hydrogen reduced water to the CMP polishing table; Brush cleaning step with ammonia water, citric acid, dilute hydrofluoric acid solution after the water polishing step is completed; Spin cleaning and drying step; characterized in that consisting of.
또한, 상기 물 연마 단계에서 수소환원수의 용존수소 농도는 0.1 ~ 2 mg/L 범위의 수소환원수를 사용하는 것을 특징으로 한다.In addition, the dissolved hydrogen concentration of the hydrogen reduced water in the water polishing step is characterized in that using hydrogen reduced water in the range of 0.1 ~ 2 mg / L.
또한, 상기 물 연마 단계는 연마 진행 시간이 5 ~ 100 초인 것을 특징으로 한다.In addition, the water polishing step is characterized in that the polishing progress time is 5 ~ 100 seconds.
이하 첨부한 도면을 참조하여 본 발명의 바람직한 실시예에 대한 구성 및 작용을 상세히 설명하면 다음과 같다.Hereinafter, the configuration and operation of the preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명의 일실시예에 따른 반도체 소자의 CMP 공정의 세정방법을 나타낸 흐름도이다.2 is a flowchart illustrating a cleaning method of a CMP process of a semiconductor device according to an embodiment of the present invention.
첨부한 도 2에 도시한 바와 같이 본 발명의 일실시예에 따른 반도체 소자의 CMP 공정의 세정방법은 슬러리에 의한 연마단계, 물 연마 단계, 브러시 세정단계, 스핀 세정 및 건조단계;를 포함하여 이루어져 있으며, 상기 슬러리에 의한 연마단계, 브러시 세정단계, 스핀 세정 및 건조단계는 종래의 기술과 동일하므로 상세한 설명은 생략하고, 새로이 부가되는 구성부재들의 동작을 중심으로 하여 상세히 설명한다.As shown in FIG. 2, the cleaning method of the CMP process of the semiconductor device according to the exemplary embodiment of the present invention includes a polishing step by slurry, a water polishing step, a brush cleaning step, a spin cleaning and a drying step; In addition, the polishing step, the brush cleaning step, the spin cleaning step and the drying step by the slurry are the same as in the prior art, and thus, detailed descriptions are omitted and the detailed description will be given based on the operation of the newly added components.
본 발명의 반도체 소자의 CMP 공정의 세정방법은 상기 물 연마 단계를 포함하여 이루어진 것을 특징으로 한다.The cleaning method of the CMP process of the semiconductor device of the present invention is characterized in that it comprises the water polishing step.
본 발명에 따른 반도체 소자의 CMP 공정의 세정방법에 의하면 상기 물 연마 단계는 수소환원수(Hydrogen reducing water)를 사용하여 연마하는 것을 특징으로 한다.According to the cleaning method of the CMP process of the semiconductor device according to the present invention, the water polishing step is characterized in that the polishing using hydrogen reducing water (Hydrogen reducing water).
상기 수소환원수는 수소가스가 용해된 물을 의미하며, 이를 세정수로 사용하면 오염물의 제거가 용이하고 재부착을 방지하는 효과가 있다. 따라서 케미컬이나 계면 활성제의 사용량을 줄이거나 대체할 수 있고 세정효과를 향상시켜 피세정물의 세정 시간을 단축할 수 있는 장점이 있다.The hydrogen reduced water means water in which hydrogen gas is dissolved, and when used as washing water, it is easy to remove contaminants and prevent reattachment. Therefore, the amount of chemical or surfactant can be reduced or replaced, and the cleaning time can be shortened by improving the cleaning effect.
본 발명에서 수소환원수는 용존수소 농도가 0.05 ~ 5 mg/L, 더욱 바람직하게는 0.1 ~ 2 mg/L 인 물을 사용하는 것이 바람직하다. In the present invention, the hydrogen reduced water is preferably used at a dissolved hydrogen concentration of 0.05 to 5 mg / L, more preferably 0.1 to 2 mg / L.
또한, 상기 물 연마 단계는 이 5 ~ 100 초의 범위의 연마 진행 시간으로 진행하는 것이 바람직하다.In addition, the water polishing step is preferably carried out with a polishing progress time in the range of 5 to 100 seconds.
일반적으로 물에 수소가 용해되면 환원력이 증가하고 피세정물의 표면 전하를 탈착된 오염물질과 동일하게 음의 상태의 산화환원전위(oxidation reduction potential, 이하 'ORP'라 한다.)를 띠게함으로써 재부착을 방지하여 슬러리 파티클, CMP 부산물, 기타 오염물질의 제거효과를 높일 수 있다.In general, when hydrogen is dissolved in water, the reducing power increases, and the surface charge of the object to be cleaned is reattached by having a negative oxidation reduction potential (ORP) as the desorbed pollutant. It can prevent the removal of slurry particles, CMP by-products and other contaminants.
또한 수소환원수는 ORP가 음의 값을 가지므로 텅스텐과 같은 금속이 산화, 부식되지 않고 안정적인 상태로 존재하므로 이를 사용하여 물 연마를 진행하면 텅스텐 플러그의 표면에 텅스텐 산화물의 형성을 방지할 수 있다.In addition, since hydrogen-reducing water has a negative value of ORP, a metal such as tungsten is present in a stable state without oxidation and corrosion, and thus, water polishing can be used to prevent the formation of tungsten oxide on the surface of the tungsten plug.
본 발명은 상기 실시 예에 한정되지 않고 본 발명의 기술적 요지를 벗어나지 아니하는 범위 내에서 다양하게 수정/변형되어 실시될 수 있음은 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 있어서 자명한 것이다.It will be apparent to those skilled in the art that the present invention is not limited to the above embodiments and can be practiced in various ways within the scope not departing from the technical gist of the present invention. will be.
이상에서 상세히 설명한 바와 같이, 본 발명에 따른 반도체 소자의 CMP 공정의 세정방법에 의하면 물 연마 단계에서 수소환원수를 사용함으로써 텅스텐의 산화를 방지하여 콘택트저항을 줄이고 금속배선의 신뢰성을 향상시킬 수 있는 효과가 있다.As described in detail above, according to the cleaning method of the CMP process of the semiconductor device according to the present invention by using hydrogen reduced water in the water polishing step to prevent the oxidation of tungsten to reduce the contact resistance and improve the reliability of the metal wiring There is.
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| KR20000035932A (en) * | 1996-08-29 | 2000-06-26 | 윌버 씨. 크루셀 | A brush assembly apparatus |
| JP2002237477A (en) | 2001-02-09 | 2002-08-23 | Matsushita Electric Ind Co Ltd | Method of polishing work and polishing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20000035932A (en) * | 1996-08-29 | 2000-06-26 | 윌버 씨. 크루셀 | A brush assembly apparatus |
| JP2002237477A (en) | 2001-02-09 | 2002-08-23 | Matsushita Electric Ind Co Ltd | Method of polishing work and polishing device |
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