KR100691635B1 - Group iii nitride based semiconductor substrate, vertical structure nitride type semiconductor light emitting device and method of producing the group iii nitride based semiconductor substrate - Google Patents

Abstract

A group III nitride based semiconductor substrate, a vertical structure nitride type semiconductor light emitting device, and a method for producing a group III nitride based semiconductor substrate are provided to form top and bottom surfaces with Ga-terminal surfaces by using an intermediate layer for changing the termination surfaces. A top surface of a first substrate is formed with an N-termination surface(B). The first substrate is composed of GaN. An intermediate layer is formed on the N-termination surface of the first substrate in order to change the termination surface. A second substrate is formed on the intermediate layer and is composed of GaN. A bottom surface of the first substrate and a top surface of the second substrate are formed with Ga-termination surfaces(A1,A2). The intermediate layer is formed with a nitrified metal layer.

Description

GROUP III NITRIDE BASED SEMICONDUCTOR SUBSTRATE, VERTICAL STRUCTURE NITRIDE TYPE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING THE GROUP Ⅲ NITRIDE BASED SEMICONDUCTOR SUBSTRATE}

1 is a cross-sectional view of a conventional horizontal structure LED device.

2 is a cross-sectional view of a conventional vertical structure LED device.

3 and 4 are diagrams schematically showing growth of a GaN substrate.

5A to 5C are cross-sectional views of a group III nitride semiconductor growth substrate according to various embodiments of the present invention.

6 is a cross-sectional view of a vertical structure LED device according to the present invention.

7 to 9 are process cross-sectional views showing a method for manufacturing a group 3 nitride semiconductor growth substrate according to various embodiments of the present invention.

<Description of the symbols for the main parts of the drawings>

101, 201, 301, 403, 501, 601, 701: first substrate

103, 203, 303, 401, 503, 603, 703: second substrate

102, 502: Nitrided metal layer 202, 602: GaAs layer

302, 702: metal adhesive layer 402: intermediate layer

The present invention relates to a method for manufacturing a group III nitride semiconductor growth substrate, a vertical structure LED device and a group III nitride semiconductor growth substrate using the same. More specifically, the upper and lower surfaces of the group III nitride semiconductor are grown. The present invention relates to a substrate, a vertical structure LED device, and a method for manufacturing a group 3 nitride semiconductor growth substrate using the same.

In general, nitride compounds are group III-V compound crystals such as GaN, InN, AlN, and the like, and are widely used in LED devices capable of emitting short wavelength light (ultraviolet to green light), especially blue light. Usually, it is manufactured using substrates, such as a sapphire substrate and a SiC substrate. Since the sapphire substrate and the SiC substrate do not coincide with the nitride compound and the lattice constant, dislocation due to lattice mismatch occurs. These potentials cause a decrease in luminous efficiency. In order to lower dislocation density, epitaxial lateral over growth (ELOG) and the like are used, and dislocation density level is about 10 ⁷ / cm ² . In order to obtain lower dislocation densities, GaN substrates made of nitride-based compounds having matching lattice constants have been used to manufacture LED devices. However, in vertical LED devices using GaN substrates, the N-terminated surface of GaN substrates exhibits high resistance when forming n-ohmic metal contacts, thus degrading the performance of LED devices. It becomes a factor.

1 is a cross-sectional view showing a LED device 10 of a horizontal structure using a conventional sapphire substrate. As shown in FIG. 1, the LED device 10 having a horizontal structure using a conventional sapphire substrate is sequentially formed on the sapphire substrate 11 by an n-type nitride semiconductor layer 13 and a multi-quantum well structure (MQW). And an InGaN active layer 14 and a p-type nitride semiconductor layer 15, wherein the p-type nitride semiconductor layer 15 and the GaN / InGaN active layer 14 are partially removed so that the n-type nitride semiconductor layer 13 The upper part of) has a structure exposed. In the case of the LED device 10 having a horizontal structure as shown in FIG. 1, the n-side electrode 16 and the p-side electrode 17 form an ohmic contact on a Ga-terminated surface A. FIG. However, there is a problem that dislocations occur due to a difference in lattice constant between the sapphire substrate 11 and the n-type nitride semiconductor layer 13.

2 is a cross-sectional view showing the LED device 20 of the vertical structure using a conventional GaN substrate. As shown in FIG. 2, the LED device 20 having a vertical structure using a conventional GaN substrate is sequentially formed of an n-type nitride semiconductor layer 22 and a multi-quantum well structure (MQW) on the GaN substrate 21. / InGaN active layer 23 and p-type nitride semiconductor layer 24 are included. The p-side electrode 27 forms an ohmic contact at the Ga-termination surface A of the LED element 20. However, since the lower surface B of the GaN substrate 21 is an N-terminal surface, there is a problem that the n-side electrode 26 is difficult to make ohmic contact with the GaN substrate 21. When the Cr / Au, which is commonly used as the n-side electrode of the vertical structure LED device, is formed on the N-termination of the GaN substrate, no ohmic contact is formed. Al / Ti is non-ohmic after heat treatment. An ohmic contact may be formed using Pd / Ti / Al / Ti. In this case, however, the specific resistance is 10 ⁻⁵ to 10 ⁻⁴ μm cm, which is relatively higher than that of the general n-omic (the specific resistance is 10 ⁻⁷ to 10 ⁻⁶ μm cm).

면에서 GaN이 성장하는 것을 나타내는 도면이다. 도 3 및 도 4를 참조하면, GaN은 Ga-N의 결합(bond)이 1개인 면(S)에서 성장한다. 따라서, 성장면이 Ga-극성인지 N-극성인지 관계없이 GaN 기판의 한 면이 Ga-종단면이면 반대면은 N-종단면이 된다. 이와 같은 이유로 종래에는 양면이 Ga-종단면인 GaN 기판을 제조할 수 없었다.3 and 4 are diagrams schematically showing growth of a GaN substrate. 3 is a view showing the growth of GaN on the [0001] surface of GaN, Figure 4 is a view of the GaN

It is a figure which shows that GaN grows in surface. Referring to FIGS. 3 and 4, GaN grows on the surface S of one bond of Ga-N. Thus, irrespective of whether the growth plane is Ga-polar or N-polar, if one side of the GaN substrate is a Ga-terminal plane, the opposite side is an N-terminal plane. For this reason, conventionally, a GaN substrate having both sides of a Ga-terminated surface cannot be manufactured.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a substrate for growing a group III nitride semiconductor having both a top surface and a bottom surface thereof, and a method of manufacturing the same.

Another object of the present invention is to provide a vertical structure LED device having a low potential density of the nitride semiconductor layer and an ohmic contact formed between the n-side electrode and the substrate by using the group III nitride semiconductor growth substrate.

In order to achieve the above technical problem, the Group 3 nitride semiconductor growth substrate according to the present invention is the first substrate of the upper surface is N- longitudinal section and GaN; An intermediate layer for changing the longitudinal section formed on the N-terminal face of the first substrate; And a second substrate formed of GaN on the intermediate layer, wherein a bottom surface of the first substrate and a top surface of the second substrate are Ga-terminated cross-sections.

In one embodiment of the present invention, the intermediate layer may be a nitrided metal layer. Preferably, the metal layer may be a transition metal capable of nitriding treatment, and preferably, the transition metal may be selected from the group consisting of Ni, Cr, Ti, Sc, and Al.

In another embodiment of the present invention, the intermediate layer may be GaAs.

In another embodiment of the present invention, the intermediate layer may be a metal adhesive layer. Preferably, the metal adhesive layer may be selected from the group consisting of Au-Sn, Sn, In, Au-Ag, Pb-Sn, Au-Si, AlSi, Cu-Sn, and ITO.

Vertical structure LED device according to the present invention comprises a group 3 nitride semiconductor growth substrate; An n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the growth substrate; An n-side electrode formed on the lower surface of the growth substrate; And a p-side electrode formed on the p-type nitride semiconductor layer. An upper surface of the p-type nitride semiconductor layer and a lower surface of the growth substrate are Ga-terminated cross-sections. The growth substrate includes a first substrate made of GaN, an intermediate layer formed on the first substrate for changing a longitudinal section, and a second substrate formed on the intermediate layer and formed of GaN, the lower surface of the first substrate And the top surface of the second substrate is a Ga- longitudinal section.

In one embodiment of the vertical structure LED device according to the present invention, the intermediate layer may be a nitrided metal layer. Preferably, the metal layer may be a transition metal capable of nitriding treatment. Preferably the transition metal may be selected from the group consisting of Ni, Cr, Ti, Sc, Al.

In another embodiment of the vertical structure LED device according to the present invention, the intermediate layer may be GaAs.

In another embodiment of the vertical structure LED device according to the present invention, the intermediate layer may be a metal adhesive layer. Preferably, the metal adhesive layer may be selected from the group consisting of Au-Sn, Sn, In, Au-Ag, Pb-Sn, Au-Si, AlSi, Cu-Sn, and ITO.

A method for manufacturing a group III nitride semiconductor growth substrate according to the present invention comprises the steps of forming an intermediate layer for changing the longitudinal section on the N-termination of the first substrate of GaN; By growing GaN on the intermediate layer, forming a second substrate of GaN on the intermediate layer, the lower surface of the first substrate and the upper surface of the second substrate is characterized in that the Ga longitudinal cross-section.

In one embodiment of the method for manufacturing a group III nitride semiconductor growth substrate according to the present invention, the forming of the intermediate layer may include depositing a metal layer capable of nitriding on an N-terminal surface of the first substrate, and the metal layer. And nitriding the upper surface. Preferably, the metal layer may be a transition metal capable of nitriding treatment. Preferably, the transition metal may be selected from the group consisting of Ni, Cr, Ti, Sc, Al.

In another embodiment of the method for manufacturing a group III nitride semiconductor growth substrate according to the present invention, the forming of the intermediate layer may include depositing a GaAs layer on an N-termination surface of the first substrate.

In accordance with another aspect of the present invention, there is provided a method of manufacturing a substrate for growing a group III nitride semiconductor, comprising: preparing a first substrate and a second substrate made of GaN; Attaching the N-termination surface of the first substrate and the N-termination surface of the second substrate to each other using a metal adhesive layer, wherein the lower surface of the first substrate and the upper surface of the second substrate may be Ga-termination surfaces. . The metal adhesive layer may be selected from the group consisting of Au-Sn, Sn, In, Au-Ag, Pb-Sn, Ag-Cu, Ta-Al, Au-Si, AlSi, Cu-Sn, and ITO.

In the present specification, 'nitride semiconductor or group III nitride semiconductor' is represented by Al _x Ga _y In _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). It means a bicomponent, ternary or quaternary compound semiconductor.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. But. Embodiments of the invention may be modified in many different forms and should not be construed as limited to the embodiments set forth herein. Embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

5A, 5B and 5C are cross-sectional views of a group III nitride semiconductor growth substrate according to the present invention.

Referring to FIG. 5A, in the group III nitride semiconductor growth substrate 100 according to the present invention, a first substrate 101, a nitrided metal layer 102, and a second substrate 103 are sequentially formed. The first substrate 101 and the second substrate 103 are GaN substrates having the same crystal structure as the nitride semiconductor material and lattice matching to facilitate growth of the nitride semiconductor material. The first substrate and the second substrate, which are GaN substrates, may be grown by Hybrid Vapor Phase Epitaxy (HVPE) or Epitaxial Lateral Overgrowth-Hybrid Vapor Phase Epitaxy (ELO-HVPE). As shown in FIGS. 3 and 4, one surface of the first substrate 101 and the second substrate 103, which are GaN substrates, is an N-termination surface B, and a surface opposite thereto is a Ga-termination surface A1. .

A nitrided metal layer 102 is formed on the N-terminal surface B of the first substrate 101. The metal layer 102 functions as an intermediate layer for changing the longitudinal section. The nitrided metal layer 102 is preferably a transition metal having a hexagonal structure or a face centered cubic (FCC). Transition metals with hexagonal structures or face-centered cubic structures facilitate epitaxial growth of GaN after nitriding. Examples of transition metals having a hexagonal structure or a face centered cubic structure include Ni, Cr, Ti, Sc, and Al.

The nitrided metal layer 102 deposits transition metals such as Ni, Cr, Ti, Sc, and Al on the N-terminal surface B of the first substrate 101, and then transitions metals in an N ₂ or NH ₃ atmosphere. The surface is formed by nitriding. The transition metal deposition is a method such as sputtering, molecular beam epitaxy, e-beam evaporation.

When GaN is grown on the nitrided metal layer 102 formed on the first substrate 101, GaN-polar GaN is formed. In the nitrided metal layer 102, nitrogen (N) is bonded to the metal to form a nitrogen bond (N-bond), and since the nitrogen (N) is bonded to Ga during GaN growth, the nitrided metal layer 102 GaN formed on the layer has Ga-polarity. Thus formed on the nitrided metal layer 102, the upper surface A2 of the second substrate 103 made of GaN becomes a Ga-terminated cross section.

Since both the lower surface A1 and the upper surface A2 of the group III nitride semiconductor growth substrate 100 are Ga-terminated surfaces, the growth substrate 100 is formed of a nitride semiconductor formed on the upper surface A2 of the growth substrate 100. Form lattice match with the layer. Therefore, an LED device having high luminous efficiency may be obtained using the growth substrate 100. In addition, in the vertical structure LED, since the ohmic contact is formed with the n-side electrode formed on the bottom surface A1 of the growth substrate 100, there is an advantage of lowering the contact resistance.

Referring to FIG. 5B, in the group III nitride semiconductor growth substrate 200 according to the present invention, a first substrate 201, a GaAs layer 202, and a second substrate 203 are sequentially formed. The embodiment of FIG. 5B differs from the embodiment of FIG. 5A in that the GaAs layer 202 is an intermediate layer for changing the longitudinal section. GaAs on the N-termination (B) of the first substrate 201 is grown using a process such as metal organic chemical vapor deposition (MOCVD) or hybrid vapor deposition.

When GaN is grown on a GaAs layer 202 made of GaAs, Ga-polar GaN is formed. As such, the upper surface A2 of the second substrate 203 formed on the GaAs layer 202 becomes a Ga-terminated cross section. Accordingly, the lower surface A1 and the upper surface A2 of the group III nitride semiconductor growth substrate 200 become Ga-terminated cross sections.

Referring to FIG. 5C, in the group III nitride semiconductor growth substrate 300 according to the present invention, a first substrate 301, a metal adhesive layer 302, and a second substrate 303 are sequentially formed. The embodiment of FIG. 5B differs from the embodiment of FIGS. 5A and 5B in that the metal adhesive layer 302 is an intermediate layer for changing the longitudinal section. The embodiment of FIG. 5C is formed by wafer bonding a first substrate 301 and a second substrate 303 made of GaN with a metal adhesive. The metal adhesive forms an intermediate layer 302 which is a metal adhesive layer. As the metal adhesive, Au-Sn, Sn, In, Au-Ag, Pb-Sn, Au-Si, AlSi, Cu-Sn, and ITO which are generally used for wafer bonding may be used.

6 is a cross-sectional view of a vertical structure LED device using a group III nitride semiconductor growth substrate according to the present invention. Referring to FIG. 6, the vertical structure LED device 400 using the group III nitride semiconductor growth substrate includes an n-type nitride semiconductor layer 404, an active layer 405, and a p on the group III nitride semiconductor growth substrate 409. The type nitride semiconductor layer 406 and the p-side electrode 408 are stacked in this order. The n-side electrode 407 is formed on the lower surface A1 of the growth substrate.

The group 3 nitride semiconductor growth substrate 409 includes a first substrate 403 made of GaN, an intermediate layer 402 formed on the first substrate for changing a longitudinal section, and formed of GaN formed on the intermediate layer. A second substrate 401 is included, wherein a bottom surface A1 of the first substrate and a top surface A2 of the second substrate are Ga-terminated cross sections. Since the n-side electrode 407 is formed on the bottom surface A1 of the first substrate, which is a Ga-terminated surface, the n-side electrode 407 forms an ohmic contact, thereby lowering the contact resistance. In addition, since the second substrate 401 is a GaN substrate, the nitride semiconductor material growing on the substrate has the same crystal structure and lattice matching to facilitate growth of the nitride semiconductor material.

As described above, the intermediate layer 402 may be a nitrided metal layer (102 of FIG. 5A), a GaAs layer (202 of FIG. 5B) or a metal adhesive layer (302 of FIG. 5C).

The n-type semiconductor layer 404 may be made of an n-doped nitride semiconductor material. Impurities used for doping the n-type nitride semiconductor layer 404 include Si, Ge, Se, Te, or C. The n-type nitride semiconductor layer 404 may be formed on the upper surface of the Group 3 nitride semiconductor growth substrate 409 using a process such as organometallic vapor deposition, molecular beam growth, or hybrid vapor deposition.

The active layer 405 is a layer for emitting light and preferably has a single or multiple quantum well structure. For example, the active layer 405 is composed of a nitride semiconductor layer such as InGaN or GaN. The active layer 405 may be formed on the n-type nitride semiconductor layer 404 by using a process such as an organic metal vapor deposition method, a molecular beam growth method, or a hybrid vapor deposition method, such as the n-type nitride semiconductor layer 404.

The p-type nitride semiconductor layer 406 may be formed of a p-doped nitride semiconductor material. Impurities used for the doping of the p-type nitride semiconductor layer 406 include Mg, Zn, Be or the like. The p-type nitride semiconductor layer 406 is formed on the top surface of the active layer 405 using a process such as organometallic vapor deposition, molecular beam growth, or hybrid vapor deposition.

The n-side electrode 407 may be formed on the lower surface A1 of the growth substrate 409 by a single layer or a plurality of layers made of a material selected from the group consisting of Ti, Cr, Al, Cu, and Au. The n-side electrode 407 may be formed by a process such as chemical vapor deposition, electron beam evaporation, or sputtering. The lower surface A1 of the growth substrate 409 is a Ga- longitudinal cross section, thereby forming an ohmic contact with the n-side electrode 407.

The p-side electrode 408 may be formed by chemical vapor deposition, electron beam evaporation, or sputtering, using Au or an alloy containing Au on the upper surface A3 of the p-type nitride semiconductor layer 406. .

7 is a cross-sectional view showing the method for manufacturing the group 3 nitride semiconductor growth substrate according to the temporary mode of the present invention.

First, as shown in FIG. 7A, a first substrate 501 made of GaN is provided, and a metal layer 502 capable of nitriding is deposited on the N-termination surface B of the first substrate 501. . The first substrate 501 made of GaN is grown by a conventional GaN substrate manufacturing method such as hybrid vapor deposition or ELO-HVPE.

The nitrided metal layer formed on the N-terminal surface B of the first substrate 501 may be formed by sputtering a transition metal having a hexagonal structure or a surface centered cubic structure such as Ni, Cr, Ti, Sc, and Al. It is formed by growing using a method such as vapor deposition or electron beam vapor deposition. When the growth temperature of the metal layer is 500 ° C. or less, since the metal is polycrystallized, the growth temperature of the metal layer is preferably 500 ° C. or more. In the case of using the ion beam assisted deposition method, the growth temperature may be higher than room temperature.

Next, as illustrated in FIG. 7B, the upper surface of the metal layer 502 is nitrided. Nitriding of the metal layer 502 is performed in an NH ₃ or N ₂ atmosphere. In particular, when the metal layer 502 is made of Ni, it is preferable to carry out nitriding at 300 ° C or higher.

Subsequently, as shown in FIGS. 7C and 7D, the GaN layer is grown on the metal layer 102 on which the surface is nitrided. The GaN layer can be formed by a process such as a hybrid vapor deposition method or an organometallic vapor deposition method. GaN growth on the nitrided metal layer 502 forms Ga-polar GaN. In the nitrided metal layer 502, nitrogen (N) is bonded to the metal to form a nitrogen bond (N-bond), and since the nitrogen (N) is bonded to Ga during GaN growth, the nitrided metal layer 502 GaN formed on the layer has Ga-polarity. The GaN layer formed on the nitrided metal layer 502 forms a second substrate 503 whose upper surface A2 is Ga-terminated as shown in FIG.

8 is a cross-sectional view of the process for growing a group 3 nitride semiconductor growth substrate according to another embodiment of the present invention. The embodiment of FIG. 8 differs from the embodiment of FIG. 7 in that the step 602 of depositing a GaAs layer forms an intermediate layer for changing the longitudinal section.

First, as shown in FIG. 8A, a first substrate 601 made of GaN is grown by a process such as hybrid vapor deposition or ELO-HVPE. Next, a GaAs layer 602 is deposited on the N-terminal cross-section B of the first substrate 601. The GaAs 602 layer may be formed by a process such as organometallic vapor deposition or hybrid vapor deposition.

Next, as shown in FIG. 8B, GaN is grown on the GaAs layer 602. GaN can be grown by a process such as organometallic vapor deposition or hybrid vapor deposition. Thus, when GaN is grown on GaAs 602, Ga-polar GaN is formed. The Ga-polar GaN layer formed on the GaAs layer 602 forms a second substrate 603 whose upper surface A2 is Ga-terminated, as shown in Fig. 8C.

FIG. 9 is a cross-sectional view showing a process for growing a group 3 nitride semiconductor growth substrate according to still another embodiment of the present invention. FIG. First, as shown in FIG. 9A, a first substrate 701 and a second substrate 703 made of GaN are prepared. The first substrate 701 and the second substrate 703 made of GaN may be formed by a process such as an organometallic vapor deposition method or a hybrid vapor deposition method.

Next, as illustrated in FIG. 9B, the N-termination surface B1 of the first substrate 701 and the N-termination surface B2 of the second substrate 703 are wafer bonded using the metal adhesive layer 702. The wafer bonding forms a metal adhesive layer 702 on the N-terminal surface B1 of the first substrate 701, and then attaches the N-terminal surface B2 of the second substrate 703 on the metal adhesive layer 702. can do. In addition, the metal adhesive layer 702 is formed on the N-terminal surface B1 of the first substrate 701, and the metal adhesive layer is formed on the N-terminal surface B2 of the second substrate 703. The N-termination surface B1 of the first substrate 701 on which the 702 is formed and the N-termination surface B2 of the second substrate 703 may be attached.

Through the group III nitride semiconductor growth substrate and the manufacturing method according to the present invention described above it is possible to obtain a growth substrate having a top and bottom both Ga- longitudinal section. Since the growth substrate is GaN, the crystal structure is the same as that of the nitride semiconductor material grown on the substrate, so that the growth of the nitride semiconductor material is easy. In addition, since the lattice match between the substrate and the nitride semiconductor material grown on the substrate, an LED device having high luminous efficiency can be obtained. In addition, since the bottom surface of the substrate is Ga-terminated, contact resistance can be lowered by forming an ohmic contact with a p-side electrode formed on the bottom surface of the vertical LED device.

The present invention is not limited by the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims, and various forms of substitution, modification, and within the scope not departing from the technical spirit of the present invention described in the claims. It will be apparent to those skilled in the art that changes are possible.

As described above, according to the present invention, a substrate for growing a III-nitride semiconductor having a Ga-terminated upper and lower surfaces thereof can be obtained by an intermediate layer for changing the longitudinal cross-section, and the substrate for growing a III-nitride semiconductor can be used as a vertical LED device. In this case, an LED device having excellent luminous efficiency may be manufactured by lattice matching. In addition, an ohmic contact is formed between the lower surface of the substrate and the p-side electrode, thereby reducing the contact resistance.

Claims (21)

A first substrate having an N-terminal surface and made of GaN; An intermediate layer for changing a longitudinal section formed on the N-terminal surface of the first substrate; And A second substrate formed on said intermediate layer and made of GaN; The lower surface of the first substrate and the upper surface of the second substrate is a group III nitride semiconductor growth substrate, characterized in that the Ga- longitudinal section. The method of claim 1, The intermediate layer is a group III nitride semiconductor growth substrate, characterized in that the nitrided metal layer. The method of claim 2, The metal layer is a group III nitride semiconductor growth substrate comprising a transition metal capable of nitriding treatment. The method of claim 3, The transition metal is a group III nitride semiconductor growth substrate, characterized in that selected from the group consisting of Ni, Cr, Ti, Sc, Al. The method of claim 1, The intermediate layer is a group III nitride semiconductor growth substrate, characterized in that the GaAs. The method of claim 1, The intermediate layer is a group III nitride semiconductor growth substrate, characterized in that the metal adhesive layer. The method of claim 6, The metal adhesive layer is a group III nitride semiconductor growth substrate, characterized in that selected from the group consisting of Au-Sn, Sn, In, Au-Ag, Pb-Sn, Au-Si, AlSi, Cu-Sn, ITO. A group III-nitride semiconductor growth substrate; An n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the growth substrate; An n-side electrode formed on the lower surface of the growth substrate; And A p-side electrode formed on the p-type nitride semiconductor layer, The upper surface of the p-type nitride semiconductor layer and the lower surface of the growth substrate are Ga- longitudinal cross sections, The growth substrate includes a first substrate made of GaN, an intermediate layer formed on the first substrate for changing longitudinal cross-section, and a second substrate formed on the intermediate layer and made of GaN, Vertical structure LED device, characterized in that the lower surface and the upper surface of the second substrate is a Ga- longitudinal section. The method of claim 8, The intermediate layer is a vertical structure LED device, characterized in that the nitrided metal layer. The method of claim 9, The metal layer is a vertical structure LED device characterized in that it comprises a transition metal capable of nitriding treatment. The method of claim 10, The transition metal is a vertical structure LED device, characterized in that selected from the group consisting of Ni, Cr, Ti, Sc, Al. The method of claim 8, The intermediate layer is a vertical structure LED device, characterized in that the GaAs. The method of claim 8, The intermediate layer is a vertical structure LED device, characterized in that the metal adhesive layer. The method of claim 13, Wherein said metal adhesive layer is selected from the group consisting of Au-Sn, Sn, In, Au-Ag, Pb-Sn, Au-Si, AlSi, Cu-Sn, and ITO. Forming an intermediate layer for changing the longitudinal section on the N-terminal surface of the first substrate of GaN; And Growing GaN on the intermediate layer, thereby forming a second substrate of GaN on the intermediate layer, The lower surface of the first substrate and the upper surface of the second substrate is a Ga- longitudinal cross-sectional surface manufacturing method for a group III nitride semiconductor growth. The method of claim 15, Forming the intermediate layer, And depositing a metal layer capable of nitriding on the N-terminal surface of the first substrate, and nitriding the upper surface of the metal layer. The method of claim 16, The metal layer is a group 3 nitride semiconductor growth substrate manufacturing method, characterized in that the transition metal capable of nitriding treatment. The method of claim 17, The transition metal is Ni, Cr, Ti, Sc, Al group III nitride semiconductor growth substrate manufacturing method, characterized in that selected from the group consisting of. The method of claim 15, Forming the intermediate layer, And depositing a GaAs layer on the N-terminal surface of the first substrate. Preparing a first substrate and a second substrate of GaN; And Attaching the N-termination surface of the first substrate and the N-termination surface of the second substrate to each other using a metal adhesive layer, The lower surface of the first substrate and the upper surface of the second substrate is a Ga- longitudinal cross-sectional surface manufacturing method for a group III nitride semiconductor growth. The method of claim 20, The metal adhesive layer is Au-Sn, Sn, In, Au-Ag, Pb-Sn, Au-Si, AlSi, Cu-Sn, ITO Group III nitride semiconductor growth substrate manufacturing method characterized in that the group consisting of ITO.

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