KR100686726B1 - Plasma enhanced chemical vapor deposition apparatus - Google Patents

Abstract

A plasma chemical vapor deposition apparatus is provided to effectively disassemble a gas injection part supported on an upper portion of a chamber lead by connecting a chamber body with the chamber lead with a hinge part. A plasma chemical vapor deposition apparatus comprises a chamber body(10) having a desired reaction chamber and an access opening, a gas injection part(30) disposed in the reaction chamber for spraying a deposition gas, and a chamber lead(20) coupled to the chamber body by a first hinge part(90). The hinge part is pivoted between an open position for opening the access opening and a close position for closing the access opening. A cleaning gas supply unit(50) supplies a cleaning gas to the reaction chamber.

Description

Plasma Chemical Vapor Deposition Equipment {PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS}

1 is a schematic view showing a conventional plasma chemical vapor deposition apparatus,

FIG. 2 is an exploded perspective view showing a decomposition procedure of the plasma chemical vapor deposition apparatus of FIG. 1;

3 is a cross-sectional view showing a plasma chemical vapor deposition apparatus according to an embodiment of the present invention,

4 is a perspective view showing the plasma chemical vapor deposition apparatus of FIG.

5 is a perspective view illustrating an open state of the chamber lid of FIG. 3;

6 is a perspective view illustrating an open state of the upper chamber of FIG. 3.

* Explanation of symbols for the main parts of the drawings

10 chamber main body 12 reaction chamber

14: access opening 16: lower chamber

18: upper chamber 19: insulating member

20: chamber lead 30: gas injection unit

32: gas distribution plate 40: substrate support

50: cleaning gas supply unit 60: high frequency matching unit

70: deposition gas supply unit 80: gas flow section

90: first hinge portion 92: support arm

94: pressure member 95: second hinge portion

97: high frequency shield 98: sealing member

99: rotating stopper

The present invention relates to a plasma chemical vapor deposition apparatus, and more particularly, to a plasma chemical vapor deposition apparatus capable of dissolving a gas injection unit efficiently.

Generally, thin film manufacturing methods include chemical vapor deposition, sputtering, and coating of organic compounds. Chemical vapor deposition is widely used because of various advantages such as the ability to obtain thickness and resistance of various thin films, low cost of thin film manufacturing, and thin film formation at low temperature.

Among chemical vapor deposition methods, plasma enhanced chemical vapor deposition (PECVD) decomposes a deposition gas into a plasma state through a high frequency discharge and causes a chemical reaction to form a thin film on a substrate.

1 is a schematic view showing a conventional plasma chemical vapor deposition apparatus. As shown, the plasma chemical vapor deposition apparatus 101 is provided with a chamber body (110). The chamber body 110 has a reaction chamber 112 in which a predetermined plasma chemical vapor deposition process occurs and an opening 114 formed upward. In addition, the chamber body 110 includes a deposition gas supply unit 170 for supplying a deposition gas to the gas injection unit 120.

The substrate support unit 130 supports the substrate S to correspond to the gas injection unit 120. The gas injection unit 120 is disposed in the reaction chamber 112 to distribute the deposition gas to the substrate (S). The chamber lead 116 is disposed above the chamber body 110 to support the gas injection unit 120 to be insulated from the chamber body 110. The insulating member 117 insulates the gas injection unit 120 and the chamber body 110 through the chamber lead 116 and the chamber body 110. The chamber cover 118 blocks the high frequency of the reaction chamber 112 from leaking to the outside.

The gas manifold 140 receives the deposition gas supplied by the deposition gas supply unit 170 and the cleaning gas supplied by the cleaning gas supply unit 150, and supplies them to the gas injection unit 120. The cleaning gas supply unit 150 is supported by the chamber cover 118. The cleaning gas supply unit 150 generates the cleaning gas, converts the plasma into plasma, and supplies the cleaning gas to the gas injection unit 120 through the gas manifold 140. The plasma-formed cleaning gas is supplied to the reaction chamber 112 through the gas injection unit 120 to form a thin film formed on the gas injection unit 120, the inner surface of the chamber body 110, and other portions other than the substrate S. Clean. The high frequency matching unit 160 is supported by the chamber cover 118 and applies the high frequency generated by the high frequency generator (not shown) to the gas injection unit 120 so that the reflected wave does not occur. Such plasma chemical vapor deposition apparatus 101 is disclosed in detail in patent application 2001-23214.

FIG. 2 is an exploded perspective view showing a decomposition procedure of the plasma chemical vapor deposition apparatus of FIG. 1. As shown, the plasma chemical vapor deposition apparatus 101 is dismantled for maintenance. Plasma chemical vapor deposition apparatus 101 is a variety of, such as unintentional thin film is formed on the gas injection unit 120, the insulating member 117 and other chamber body 110 or contaminated by particles contained in the deposition gas, etc. Can be resolved by cause. Therefore, the plasma chemical vapor deposition apparatus 101 should be easily disassembled and assembled. In particular, since the gas injection unit 120 is most contaminated and plays an important role in thin film formation, it should be easily disassembled and assembled.

However, the plasma chemical vapor deposition apparatus 101 is only possible to disassemble all the upper structures in order to decompose the gas injection unit 120. The plasma chemical vapor deposition apparatus 101 only disassembles the cleaning gas supply unit 150, the high frequency matching unit 160, the chamber cover 118, the gas manifold 140, and the chamber lead 116 in order. 120 may be disassembled. Therefore, disassembly and assembly can be complicated and difficult, and time-consuming.

Accordingly, it is an object of the present invention to provide a plasma chemical vapor deposition apparatus capable of dissolving a gas injection unit efficiently.

According to the present invention, a plasma chemical vapor deposition apparatus, comprising: a chamber body having a reaction chamber and an access opening; A gas injection unit disposed in the reaction chamber to inject a deposition gas; And a chamber lid coupled to the chamber body by a first hinge portion to rotate between an open position of opening the access opening and a closed position of closing the access opening. Is achieved.

The cleaning gas supply unit may further include a cleaning gas supply unit supplying the cleaning gas in a plasma state to the reaction chamber, and the cleaning gas supply unit may be supported by the chamber lead to move integrally with the chamber lead.

And a deposition gas supply unit supplying the deposition gas to the gas injection unit, wherein the chamber lid is positioned at the closed position, and the cleaning gas of the cleaning gas supply unit and the deposition gas of the deposition gas supply unit are disposed in the gas injection unit. It may be provided with a gas flow path to flow.

The apparatus may further include a high frequency matching unit configured to apply a high frequency power supply to the gas injection unit, and the chamber lid may support the high frequency matching unit such that the high frequency matching unit contacts the gas injection unit when positioned in the closed position.

Interposed between the chamber body and the chamber lead may further include a pressing member for pressing the chamber lead to rotate by the first hinge portion.

Interposed between the chamber body and the chamber lid may further include a high-frequency blocking unit for blocking the high frequency of the reaction chamber to leak to the outside when the chamber lead is located in the closed position.

The chamber lid may further include a sealing member for sealing between the chamber body and the chamber lead when the chamber lid is located in the closed position.

The chamber body has a chamber lower portion, and a chamber upper portion that insulates the gas injection portion under the chamber and is coupled to the lower portion of the chamber by a second hinge portion, the chamber body being interposed between the chamber lead and the upper chamber portion. It may be provided with a rotation stopper for detachably coupling the chamber lead and the upper chamber.

Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the present invention; In various embodiments, the same components are given the same reference numerals. The same components are representatively described in the first embodiment and may not be described in other embodiments.

3 is a cross-sectional view showing a plasma chemical vapor deposition apparatus according to an embodiment of the present invention, Figure 4 is a perspective view showing a plasma chemical vapor deposition apparatus of FIG. As shown, the plasma chemical vapor deposition apparatus 1 is a device for forming a thin film on a substrate by using plasma enhanced chemical vapor deposition (PECVD). The plasma chemical vapor deposition apparatus 1 supplies a deposition gas to a substrate and applies a high frequency power to plasma the deposition gas to induce a chemical action between the decomposed deposition gas and the substrate to form a thin film on the substrate.

The plasma chemical vapor deposition apparatus 1 includes a chamber main body 10 having a reaction chamber 12 and an access opening 14, a gas injection unit 30 disposed in the reaction chamber 12 and injecting deposition gas, and an approach. And a chamber lid 20 coupled to the chamber body 10 by the first hinge portion 90 so as to rotate between an open position for opening the opening 14 and a closed position for closing the access opening 14. .

The chamber body 10 has a reaction chamber 12 which is a space in which a chemical vapor deposition reaction takes place by forming a hollow. The access opening 14 is formed to penetrate the upper side of the chamber body 10 so that the reaction chamber 12 is exposed to the outside. The substrate support part 40 is disposed in the reaction chamber 12, and the substrate support part 40 supports the substrate and heats the substrate to a predetermined temperature. The chamber body 10 has a chamber lower portion 16 and an upper chamber portion 18. The lower chamber 16 forms a reaction chamber 12, and the upper chamber 18 supports the gas injection unit 30 insulated.

The gas injection part 30 is disposed in the reaction chamber 12 so as to correspond to the substrate support part 40. The gas injection unit 30 includes a gas distribution plate 32 and an injection unit support unit 34. The gas distribution plate 32 uniformly injects the deposition gas to the entire portion of the substrate, and the injection unit support unit 34 supports the gas distribution plate 32 to the upper chamber 18. The insulating member 19 is insulated from the gas injection unit 30, the chamber body 10, and the chamber lead 20 to insulate the gas injection unit 30 from the chamber body 10 and the chamber lead 20. Accordingly, the insulating member 19 has the chamber main body 10 and the chamber lead 20 having a ground potential, and the gas injection unit 30 has a high frequency potential so that the deposition gas can be converted into plasma. The insulating member 19 may include ceramics, Teflon or similar insulating materials.

The chamber lid 20 is pivotally coupled to the upper chamber 18 by the first hinge 90 to open and close the access opening 14. When the plasma chemical vapor deposition apparatus 1 performs the deposition process or the cleaning process, the chamber lid 20 is located in the closed position to close the access opening 14. When the chamber lid 20 is positioned in the open position to open the access opening 14, the gas injection unit 30 supported on the upper chamber 18 is exposed to the outside.

The chamber lead 20 supports the cleaning gas supply unit 50 and the high frequency matching unit 60. The cleaning gas supply unit 50 (remote plasma clean (RPC)) cleans the thin film deposited inside the chamber body 10 and the gas injection unit 30 when the plasma chemical vapor deposition apparatus 1 does not perform a deposition process. The cleaning gas is converted into plasma and supplied to the gas injection unit 30. Accordingly, the cleaning time can be reduced.

The cleaning gas supply unit 50 is supported by the chamber lead 20 to move integrally with the chamber lead 20. Therefore, when the chamber lead 20 is rotated to the open position when the gas injection unit 30 is to be disassembled or otherwise approaches the gas injection unit 30, the cleaning gas supply unit 50 is also rotated integrally therewith. There is no need to disassemble the cleaning gas supply unit 50 separately.

The plasma chemical vapor deposition apparatus 1 includes a deposition gas supply unit 70 for supplying a deposition gas to the gas injection unit 30. The deposition gas supply unit 70 is provided at one side of the chamber body 10 via the lower chamber 16 and the upper chamber 18. The chamber lead 20 includes a gas flow path 80 through which the cleaning gas of the cleaning gas supply unit 50 and the deposition gas of the deposition gas supply unit 70 are distributed to the gas injection unit 30 when the chamber lead 20 is positioned in the closed position. .

The gas flow path 80 extends from the deposition gas supply unit 70 and communicates with the gas injection unit 30, and extends from the cleaning gas supply unit 50 to the gas injection unit 30. The cleaning gas flow path 84 is provided. The deposition gas flow path 82 is formed to communicate the deposition gas supply unit 70 and the gas injection unit 30 when the chamber lead 20 is positioned in the closed position, and the cleaning gas flow path 84 may include the chamber lead ( 20 is formed to communicate with the cleaning gas supply unit 50 and the gas injection unit 30 in the closed position.

The plasma chemical vapor deposition apparatus 1 includes a high frequency matching unit 60 for applying a radio frequency (RF) power to the gas injection unit 30. The high frequency matching unit 60 transmits the high frequency to the gas injection unit 30 so that the reflected wave does not occur between the high frequency generation unit (not shown) generating the high frequency and the gas injection unit 30. Accordingly, the high frequency matching unit 60 allows the deposition gas to be plasma effectively.

The chamber lid 20 supports the high frequency matching part 60 so that the high frequency matching part 60 contacts the gas injection part 30 when the chamber lid 20 is positioned in the closed position. The high frequency matching part 60 is supported by the chamber lead 20 so as to rotate integrally with the chamber lead 20, and the contact terminal which contacts the gas injection part 30 when the chamber lead 20 is positioned in the closed position ( 62). When the chamber lead 20 is positioned in the closed position, the contact terminal 62 contacts the gas injection unit 30 so that the high frequency matching unit 60 may apply a high frequency to the gas injection unit 30. When the chamber lead 20 is in the open position, the contact terminal 62 is spaced apart from the gas injection unit 30, and the high frequency matching unit 60 rotates integrally. Therefore, it is not necessary to disassemble the high frequency matching unit 60 in order to disassemble the gas injection unit 30.

Plasma chemical vapor deposition apparatus 1 is a pressing member for pressing the chamber lead 20 to rotate by the first hinge portion 90 interposed between the chamber body 10 and the chamber lead 20 (94 in FIG. 5). ). The pressing member 94 pressurizes the chamber lid 20 to rotate, thereby facilitating the user to rotate the chamber lid 20. The pressing member 94 may pressurize the chamber lid 20 to rotate from the closed position to the open position or to rotate the chamber lead 20 from the open position to the closed position. The pressing member 94 may be a leaf spring, a spring spring, or other conventional pressing members.

Plasma chemical vapor deposition device (1) is interposed between the chamber body 10 and the chamber lead 20 to block the high frequency leakage of the reaction chamber 12 when the chamber lead 20 is located in the closed position to the outside The high frequency interruption | blocking part 97 is provided. The high frequency applied to the gas injection part 30 may affect the peripheral device when it leaks to the outside. The high frequency cutoff part 97 blocks the high frequency in the reaction chamber 12. The high frequency cut-off part 97 may be a ring-shaped member installed between the chamber body 10 and the chamber lead 20. In addition, the plasma chemical vapor deposition apparatus 1 includes a sealing member 98 for sealing between the chamber body 10 and the chamber lead 20 when the chamber lid 20 is positioned in the closed position. The sealing member 98 prevents the deposition gas or the cleaning gas of the reaction chamber 12 from leaking to the outside. The sealing member 98 may be formed of a polymer compound or other conventional sealing material.

The chamber lower portion 16 and the chamber upper portion 18 are coupled by the second hinge portion 95 so that the chamber upper portion 18 rotates with respect to the chamber lower portion 16. As the chamber upper portion 18 is rotated, the gas injection portion 30 supported by the chamber upper portion 18 also rotates integrally. When the upper chamber 18 is arranged side by side in the lower chamber 16, the gas injection unit 30 is disposed in the reaction chamber 12, the upper chamber 18 is rotated so as to be spaced apart from the lower chamber 16 At this time, the gas injection unit 30 is separated from the reaction chamber 12 and the reaction chamber 12 formed in the lower chamber 16 is opened.

The rotation stopper 99 is detachably coupled between the chamber lid 20 and the chamber upper portion 18 via the chamber lead 20 and the chamber upper portion 18. When the rotation stopper 99 does not couple the chamber lid 20 and the upper chamber 18 to each other, the chamber lid 20 and the upper chamber 18 are free to each other, respectively, the first hinge 90 and the second hinge. (95) can be rotated. When the rotation stopper 99 couples the chamber lid 20 and the upper chamber 18, the chamber lid 20 is rotated from the upper chamber 18 when the upper chamber 18 is rotated to be spaced apart from the lower chamber 16. Prevent rotation to be spaced apart. The rotation stopper 99 may be a means consisting of a protrusion and a groove, and other conventional fastening means.

The support arm 92 connects the chamber lid 20 with a frame (not shown) to prevent the chamber lid 20 or the upper chamber 18 from rotating over a predetermined angle. The plasma chemical vapor deposition apparatus 1 may include a pressing member for supplying rotational force between the upper chamber 18 and the lower chamber 16, a high frequency blocking unit for preventing high frequency leakage, and a sealing member for sealing each other. .

Hereinafter, the operation of the plasma chemical vapor deposition apparatus according to an embodiment of the present invention with reference to FIGS.

5 is a perspective view illustrating an open state of the chamber lid of FIG. 3. As shown, when disassembling the gas injection unit 30 due to maintenance or other various causes, the gas lead is simply rotated from the closed position to the open position around the first hinge 90. The master 30 can be accessed. After disengaging the rotation stopper 99, the chamber lead 20 and the upper chamber 18 are separated, and the chamber lead 20 is rotated to an open position. Then, the insulating member 19 and the gas injection part 30 are removed. It can disassemble from the upper chamber 18. When the gas injection unit 30 is coupled to the upper chamber 18, the gas injection unit 30 can be simply assembled in the reverse order. Therefore, the gas injection unit 30 can be easily disassembled and assembled without disassembling and assembling upper structures such as the cleaning gas supply unit 50 and the high frequency matching unit 60.

6 is a perspective view illustrating an open state of the upper chamber of FIG. 3. As shown, in the case of maintaining the reaction chamber 12 formed in the lower chamber 16, the reaction chamber is opened by rotating the upper chamber 18 with respect to the lower chamber 16 around the second hinge 95. You can easily access to (12). At this time, it is preferable that the rotation stopper 99 couples the chamber upper portion 18 and the chamber lead 20 to prevent the chamber lead 20 from rotating.

As can be seen from the above, the plasma chemical vapor deposition apparatus according to the present invention combines the chamber body and the chamber lid with a hinge portion to rotate the chamber lid to open and close the upper structure supported on the upper side of the chamber lid such as the cleaning gas supply part and the high frequency matching part. Gas injection parts can be effectively decomposed without having to decompose. In addition, the plasma chemical vapor deposition apparatus according to the present invention can omit components such as a gas manifold, a chamber cover, etc., thereby simplifying, compacting, and miniaturizing the apparatus.

Claims (8)

In the plasma chemical vapor deposition apparatus, A chamber body having a reaction chamber and an access opening; A gas injection unit disposed in the reaction chamber to inject a deposition gas; And And a chamber lid coupled to the chamber body by a first hinge portion to rotate between an open position of opening the access opening and a closed position of closing the access opening. The method of claim 1, Further comprising a cleaning gas supply unit for supplying the cleaning gas of the plasma state to the reaction chamber, And the cleaning gas supply unit is supported by the chamber lead to move integrally with the chamber lead. The method of claim 2, Further comprising a deposition gas supply unit for supplying the deposition gas to the gas injection unit, And the chamber lid includes a gas flow path in which the cleaning gas of the cleaning gas supply part and the deposition gas of the deposition gas supply part are circulated in the gas injection part when the chamber lid is positioned in the closed position. The method of claim 1, Further comprising a high frequency matching unit for applying a high frequency power to the gas injection unit, And the chamber lid supports the high frequency matching portion such that the high frequency matching portion contacts the gas injection portion when the chamber lid is positioned in the closed position. The method of claim 1, Plasma chemical vapor deposition apparatus further comprises a pressing member for interposing between the chamber body and the chamber lead to press the chamber lead to rotate by the first hinge portion. The method of claim 1, And a high frequency cut-off unit interposed between the chamber body and the chamber lid to block the high frequency of the reaction chamber from leaking to the outside when the chamber lid is positioned in the closed position. The method of claim 1, Plasma chemical vapor deposition apparatus further comprises a sealing member for sealing between the chamber body and the chamber lead when the chamber lead is located in the closed position. The method of claim 1, The chamber main body has a lower chamber and an upper chamber to support the gas injection unit insulated under the chamber and coupled to the lower chamber by a second hinge unit. And a rotation stopper interposed between the chamber lid and the upper chamber to detachably couple the chamber lid to the upper chamber.

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