KR100668797B1 - Manufacturing method and lapping carrier - Google Patents

Abstract

The present invention relates to a wrapping carrier and a method of manufacturing the same.

The present invention for this purpose is to check the iron plate thickness, hardness, value, etc. of the wrapping carrier 10 and then cut to a desired shape using nitrogen; Place the wrapping carrier on the stone plate to check the flatness, and then chamfer the embossed (uneven) portion 40 of the inner diameter of the wafer loading hole, but form a reinforcement in the gap between adjacent inserts and the inserts: resulting from laser cutting. In order to remove the thermal stress and to improve the overall flatness of the wrapping carrier to perform a heat treatment according to the characteristics of the raw material to 330 ~ 410 degrees: injecting the injection molding once for each inner diameter of the wafer loading hole 60; It is characterized by consisting of.

The present invention configured as described above has a wider gap between the loading holes of the wafer and structurally strengthens by reinforcing the minimum distance point of the gap, and also increases the number of the reliefs formed in the inner diameter of the wafer loading hole to 65 to 75. As a result, the structure of the gap portion has been strengthened, thereby greatly improving the quality and reliability of the product.

 Wrapping carrier, wafer, insert, embossed.

Description

Wrapping Carrier and Manufacturing Method Thereof {MANUFACTURING METHOD AND LAPPING CARRIER}

1 (a) is an overall configuration diagram of a conventional wrapping carrier,

        (b) is the enlarged block diagram of the main part of a conventional insert part.

2 (a) is an overall configuration diagram of the wrapping carrier applied to the present invention,

        (b) is the enlarged block diagram of the main part of the insert part of this invention.

3 is a block diagram showing a processed state of the wafer according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10: lapping carrier 20: wafer

30: insert 40: embossed

50: reinforcement unit 60: wafer loading hole

The present invention relates to a lapping carrier and a method for manufacturing the same, and more particularly, to broaden the gap between the loading holes of the wafer and to reinforce the minimum distance point of the gap to structurally strengthen the gap, and also to the inner diameter of the wafer loading hole. The number of embossed parts to be formed is 65 ~ 75, which strengthens the structure of the gap part, thereby greatly improving the quality and reliability of the product.

As is well known, a wafer (wafer), which is a semiconductor material, processes a surface of a wafer by a top plate and a bottom plate by bonding the wafer to a wrapping carrier to which an insert is coupled to process the surface.

That is, the above-described conventional technique is configured as shown in FIG. 1, and the wrapping carrier 10 is provided between the upper and lower plates to process the surface of the wafer 20, and the wrapping carrier 10 is provided. An insert 30 is inserted between the wafer and the wafer 20 to support the wafer.

However, the above-described prior art has the following problems.

That is, there is a problem that the gap between the loading holes of the wafer is too narrow and that there is no technical configuration such as a reinforcing part that can structurally strengthen the embossed portion of the minimum distance point of the gap.

In addition, the conventional technique applies a technique of manufacturing the insert 30 by injecting the injection material into the four or five wiper loading holes at once, which is reduced as the injection pressure injected into the mold is substantially reduced in the process of injecting the injection material. In part, a problem arises in that the injection state and the injection adhesive force are lowered.

In addition, the conventional technology has a problem in that the overall structure of the gap portion is weak and the service life is reduced due to the severe partial wear phenomenon occurring in the gap portion, and the shape of the wafer 20 is a matter of maintaining the flatness of the gap. In the case of severe wear, polishing occurs intensively in the center of the wafer 20 due to an unbalanced pressure on the upper plate transferred to the wafer 20. This means that the shape of the polished wafer 20 is further polished in the center and near the edges. There was a problem of producing a bulging shape.

The present invention has been made in order to solve all the problems of the prior art as described above, and the first object is to structurally strengthen the gap between the loading hole of the wafer and to reinforce the minimum distance point of the gap. The second purpose is to strengthen the structure of the gap part by setting the number of relief portions formed at the inner diameter portion of the wafer loading hole to 65 to 75. Therefore, the third purpose is to improve the service life by an average of 40% or more compared with the conventional technology. In addition, the flatness of the wafer can be improved by about 20% compared to the existing one. The fourth purpose is to minimize the wear of the wafer by strengthening the structural strength of the root region. The fifth object of the present invention is to provide a wrapping carrier and a method of manufacturing the same, which can significantly improve the quality and reliability of the product.

In order to achieve the above object, the present invention provides a method of manufacturing a wrapping carrier, comprising: cutting the desired shape using nitrogen after checking the thickness, hardness, and numerical value of the wrapping carrier; Place the lapping carrier on the stone plate to check the flatness, and then chamfer the embossed (uneven) portion of the inner diameter of the wafer loading hole, but form a reinforcement in the gap between the insert and the insert. In order to remove and to improve the overall flatness of the wrapping carrier to heat treatment according to the characteristics of the raw material at 330 ~ 410 degrees: the step of injecting an injection once for each of the inner diameter of the wafer loading hole; It provides a manufacturing method.

Hereinafter, described in detail with reference to the accompanying drawings a preferred embodiment of the present invention for achieving this purpose are as follows.

The wrapping carrier and its manufacturing method applied to the present invention is configured as shown in Figs.

In the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

The following terms are terms set in consideration of functions in the present invention, which may vary depending on the intention or custom of the producer, and their definitions should be made based on the contents throughout the specification.

First, in the present invention, a lapping carrier 10 is provided between an upper plate and a lower plate in order to process the surface of the wafer 20 as shown in FIG. 1, and between the lapping carrier 10 and the wafer 20. In the insert 30 is inserted to support the wafer, such a technical configuration is the same as the conventional and the following technical configuration will be a feature of the present invention.

That is, after checking the thickness, the hardness, the numerical value, etc. of the lapping carrier 10, cutting to a desired shape using nitrogen, and placing the lapping carrier 10 on the stone plate to check the flatness, and then the inside diameter of the wafer loading hole. To chamfer the embossed (uneven) portion of the, but to form a reinforcement in the gap between the insert and the insert adjacent to each other, to remove the thermal stress caused by laser cutting and to improve the overall flatness of the wrapping carrier Heat treatment according to the characteristics of the raw material 330 ~ 410 degrees, characterized in that consisting of a step of injecting the injection once for each of the inner diameter portion of the wafer loading hole (60).

To explain this in more detail, first check the thickness of the steel sheet / hardness / value, etc. and then perform laser cutting to the shape required by the laser cutting company. At this time, laser cutting is performed using nitrogen to minimize thermal deformation that may occur during laser cutting and to make a better laser shear surface. The auxiliary gas for generating the laser beam is He (helium), N 2 (nitrogen), CO 2 (carbon dioxide) is used, and as the processing (cutting) gas, nitrogen and oxygen two kinds of high pressure gas may be selectively used. When oxygen is used as the processing gas, the laser light heats the metal material to a sufficient temperature, and thus, when oxygen passes, the burning surface may burn a little black. Therefore, the present invention preferably uses a cutting method using nitrogen. However, it is a matter of course that the cutting can be performed by other methods as necessary.

In order to remove the thermal stress caused by the laser cutting and to improve the overall flatness of the wrapping carrier, the heat-treating according to the characteristics of the raw material is performed after the laser cutting is placed on a stone panel to check the flatness and then classify the good ones. Afterwards, the chamfering process is performed manually by using a grinder on the embossed portion of the inner diameter of the wafer loading hole.

At this time, the heat treatment temperature is preferably 330 ~ 410 degrees. This is because annealing for stress relief in carbon steel, which is a raw material of the wrapping carrier, requires heating at a temperature lower than 723 ° C, which is an A1 transformation point. In particular, the raw material of the carrier is high carbon steel, and the carbon content is high, so a lot of residual stress occurs. Elimination of stress caused by external physical action without permanent deformation such as plastic working should be handled at low temperature without crystal growth. Therefore, stress relief annealing at 500 to 600 ° C is best suited for stress relief while creating the softest, ie softest, condition in the material. However, in the case of this wrapping carrier, since strength and hardness are one of the important quality characteristics, a temperature which improves the flatness of the wrapping carrier and minimizes the hardness change while obtaining a certain level of light state rather than the most suitable temperature for annealing is appropriate. .
According to this, when the heat treatment temperature is less than 330 degrees, the heat treatment effect is not expected, so it must be 330 degrees or more, and when the heat treatment temperature is 410 degrees or more, the change in hardness, that is, the hardness falls below the required quality characteristics of the wrapping carrier. . Therefore, the heat treatment temperature that can achieve the flatness improvement without adversely affecting the strength and hardness of the wrapping carrier is preferably 330 ~ 410 degrees.
After the chamfering operation is completed, the flatness is again measured in the stone tablet board, and then the plastic insert injection work is performed in the wafer loading hole 60 only for a good product, and the injection pressure injected into the wafer loading hole 60 is 130 ~. 200 kg / cm <2> is preferable and the said injection pressure can be added or reduced as needed.

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In addition, in order to improve the state of the injection molding and the adhesion between the injection molding and the iron plate, the wafer loading holes are injected in one way. As described above, when injections are injected into four or five wiper loading holes at the same time, the injection pressure injected into the mold is substantially reduced in the process of injecting the injections, thereby partially lowering the injection state and the injection adhesive strength. In order to improve this, the injection molding process is performed once for each wafer loading hole to manufacture the insert 30.

In addition, the present invention is configured to widen the gap between the wafer loading holes 60, as well as the diameter of the wafer is 200 mm, the gap distance is characterized in that consisting of 14.00mm ~ 17.00mm. Of course, the above-mentioned method is preferable, but the numerical value can be added or decreased as needed.

In addition, the number of the embossed (uneven) portion 40 is preferably made of 65 to 75, but of course, the number of the embossed (uneven) portion can be added or subtracted as needed.

The present invention also has a reinforcement 50 for structurally strengthening the minimum distance point of the gap.

On the other hand, the present invention may be variously modified and may take various forms in applying the above configuration.

And it is to be understood that the invention is not limited to the specific forms referred to in the above description, but rather includes all modifications, equivalents and substitutions within the spirit and scope of the invention as defined by the appended claims. It should be understood that.

The wrapping carrier of the present invention configured as described above has solved the problem of deterioration of life due to severe partial wear caused by the gap portion by strengthening the overall structural strength of the gap portion. This is to achieve an effect of 40% or more improvement in the service life compared to the prior art. In addition, as shown in FIG. 3, the flatness of the wafer 20 was also improved by about 20% compared to the existing one, and the structural strength of the gap portion was strengthened to minimize the uneven wear phenomenon of the wafer.

As described in detail above, the present invention is to widen the gap between the loading holes of the wafer and to reinforce structurally by reinforcing the minimum distance point of the gap, and the number of the reliefs formed in the inner diameter of the wafer loading hole is 65 ~. The structure of the gap portion was strengthened to 75, so that the service life was improved by an average of 40% or more compared with the conventional technology. In addition, the flatness of the wafer can be improved by about 20% compared to the existing one, and by strengthening the structural strength of the gap portion, it is possible to minimize the wear of the wafer to minimize the quality and reliability of the product. It is a very useful invention that can greatly improve.

Claims (6)

In the manufacturing method of the wrapping carrier, After checking the iron plate thickness, hardness, value, etc. of the wrapping carrier 10 and cutting to a desired shape through laser cutting using nitrogen gas; After checking the flatness by placing the wrapping carrier on the stone plate, chamfering the embossed (uneven) portion 40 of the inner diameter of the wafer loading hole, but forming a reinforcing portion in the gap between the insert and the insert, which is adjacent to each other: To remove the thermal stresses caused by laser cutting and to improve the overall flatness of the wrapping carrier, heat treatment at 330 ~ 410 degrees: Injecting the injection molding once for each of the inner diameter of the wafer loading hole (60); The manufacturing method of the wrapping carrier characterized in that consisting of. According to claim 1, The injection pressure injected into the wafer loading hole 60 is a manufacturing method of the wrapping carrier, characterized in that 130 ~ 200kg / ㎠. A wrapping carrier made by the method of claim 1. According to claim 3, Lapping carrier, characterized in that the gap between the wafer loading hole (60) to form a wide as well as the diameter of the wafer is 200mm, the gap distance is 14.00mm ~ 17.00mm. According to claim 3, Wrapping carrier characterized in that the number of the embossed (uneven) portion 40 is made of 65 ~ 75. According to claim 3, Wrapping carrier characterized in that the minimum distance point of the gap is provided with a reinforcement (50) to structurally strengthen.

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