KR100666955B1 - Ink-jet print head and the fabricating method for the same - Google Patents

Abstract

The present invention relates to an inkjet printer head, wherein the inkjet printer head of the present invention comprises a substrate on which an ink feed hole is formed, an interlayer insulating layer formed around the ink feedhole on the substrate, and at least a metal on the interlayer insulating layer. An inkjet printer head and a manufacturing method according to the present invention comprising at least one metal layer and a moisture absorption preventing portion formed between the ink feed hole and the metal layer to prevent moisture from being transferred from the ink in the ink feed hole to the metal layer. Since the moisture of the ink can be prevented from penetrating into the metal wiring layer, the logic region or the pressure driving part from the layer having hygroscopicity, it is possible to prevent defects such as delamination, electrical short, malfunction of the circuit and corrosion of the metal wiring layer. This can only improve the life and reliability of the head. In addition, an increase in production yield of an inkjet printer head may increase productivity and reduce manufacturing cost.

Description

Ink-jet print head and its manufacturing method {Ink-jet print head and the fabricating method for the same}

1 is a plan view showing an inkjet printhead according to a first preferred embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1.

3A to 3E are cross-sectional views for describing a preferred manufacturing method of the ink jet printer head according to the embodiment of FIG. 2.

4 is a cross-sectional view of the inkjet print head according to the second preferred embodiment of the present invention.

5A to 5E are cross-sectional views for describing a preferred manufacturing method of the inkjet printer head according to the embodiment of FIG. 4.

6 is a cross-sectional view of the ink jet printer head according to the third preferred embodiment of the present invention.

7A to 7D are cross-sectional views illustrating a preferred manufacturing method of the inkjet printer head according to the embodiment of FIG. 6.

8 is a cross-sectional view of the ink jet printer head according to the fourth preferred embodiment of the present invention.

9A to 9F are cross-sectional views for describing a preferable manufacturing method of the inkjet printer head according to the embodiment of FIG. 8.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ink jet print head and a method of manufacturing the same, and more particularly, to an ink jet printer head and a method of manufacturing the same, which are mounted in an ink jet printer and eject ink in the form of fine droplets.

A common inkjet printhead is to eject an image of a small droplet of printing ink onto a sheet of paper. The inkjet printer head has a thermal method of generating bubbles in the ink by heat applied to the ink using an electro-thermal transducer according to a pressure generating element, and an electro-mechanical transducer. There is a piezoelectric method in which bubbles are generated in the ink by the pressure applied to the ink using the "

When the thermal method is briefly described, a current flows through a heat resistor, and when hundreds of degrees of heat generated from the heat resistor heat the ink, the ink boils and bubbles are generated. As the bubble expands, pressure is applied to the ink filled in the ink chamber, thereby allowing the ink to be discharged through the nozzle.

These thermal inkjet printer heads require high density placement of hundreds of nozzles to increase dots per inch (DPI). Therefore, it is desirable that the structure be manufactured as high as possible.

Meanwhile, the thermal inkjet head is manufactured by forming a plurality of layers on a silicon substrate. That is, a logic region for controlling the operation of the inkjet printer head, that is, the current supplied to the heat generating resistor, is formed on the wafer, and an interlayer dielectric (ILD), a metal wiring layer, and a metal wiring layer insulation layer (IMD) are formed thereon. The structure of the head is completed by laminating Inter Metal Dielectrics) and the like, and forming ink feed holes and nozzles after each layer is formed.

Since the interlayer insulating layer is formed on the layer on which the logic region is formed, the flatness of the film must be high. For this reason, boron phosphorus silicate glass having good viscosity (Viscosity) (hereinafter referred to as "BPSG (Boron Phosphorus Silicate Glass)") is mainly used as an interlayer insulating layer.

On the other hand, this BPSG has a hygroscopic property against moisture. However, in the case of the interlayer insulating layer, when the ink feed hole is formed, the tip is exposed to the ink feed hole side and thus comes into direct contact with the ink. Thus, the BPSG exposed to the ink will absorb moisture from the ink. This moisture absorption causes problems such as interface delamination between layers, corrosion of metallization layer or heater, electrical short circuit, malfunction of devices in logic area, and shorten the characteristics and life of the inkjet print head. .

SUMMARY OF THE INVENTION The present invention has been made to solve this problem, and an object of the present invention is to provide an inkjet printer head and a method of manufacturing the same, which block an ink absorption path from an ink feedhole.

An ink jet printer head according to the present invention includes a substrate on which ink feed holes are formed, an interlayer insulating layer formed around the ink feed hole on the substrate, at least one metal layer of metal on the interlayer insulating layer, and the ink feed hole. And a moisture absorption preventing portion formed between the metal layer and preventing moisture from being transferred from the ink in the ink feed hole to the metal layer.

In addition, a logic area may be formed in the substrate, and the moisture absorption preventing part may be formed between the ink feed hole and the logic area.

Also preferably, the moisture absorption prevention part may be provided as a moisture absorption prevention layer filled in a part of the interlayer insulating layer.

In addition, the interlayer insulating layer may be formed of boron phosphorus silicate glass (BPSG).

In addition, the moisture absorption layer is preferably stainless, nickel, monel, hastelloy, lead, aluminum, tin, titanium, tantalum tantalum) and any one of these alloys.

Also preferably, the metal layer may include a first metal wiring layer, a second metal wiring layer in contact with the first metal wiring layer, and a heat generating resistance layer for generating pressure.

Also preferably, the substrate may include an oxide layer, the interlayer insulating layer formed on the oxide layer, the first metal wiring layer formed on the interlayer insulating layer, a metal wiring layer insulating layer formed on the metal wiring layer layer, and the metal wiring layer insulation. The second metal wiring layer and the heating resistor layer formed on the layer, and the protection portion formed on the second metal wiring layer and the heating resistor layer may be provided.

Also preferably, the moisture absorption prevention part may include a trench extending from the protection part to the substrate around the ink feed hole, and a moisture absorption prevention layer filled in the trench.

Also preferably, the protection part includes a metal layer protection layer made of silicon nitride and an anti-cavitation layer formed on the metal layer protection layer, formed on the second metal wiring layer and the heat generating resistance layer, and the anti-cavitation layer and the moisture absorption. The prevention layer may be tantalum and formed together in forming the anti-cavitation layer.

Also preferably, the protective part may include a metal layer protective layer and an anti cavitation layer, and the moisture absorption layer may be formed when the metal layer protective layer and the anti cavitation layer are formed in the trench.

Also preferably, the metal layer protective layer may be formed of silicon nitride, and the anti-cavitation layer may be formed of tantalum.

In addition, a protective part may be formed on the metal layer, and the moisture absorption preventing part may include a stepped step formed on the substrate side around the ink feed hole, and a moisture absorption preventing layer formed together with the protective part on the stepped step.

Also preferably, the protective part may include a metal layer protective layer made of silicon nitride, and an anti cavitation layer made of tantalum and stacked on the metal layer protective layer.

Also preferably, the moisture absorption layer may be formed by stacking silicon nitride and tantalum.

The method of manufacturing an inkjet printer according to the present invention includes the steps of forming an interlayer insulating layer on a substrate, forming a metal layer on the interlayer insulating layer, forming a metal wiring layer insulating layer on the metal layer, and forming the metal wiring layer. Forming a trench to the surface of the substrate by etching the metal wiring layer insulating layer around the periphery of a region where an ink feed hole is to be formed on one side, and filling the trench on the metal wiring layer insulating layer. Forming a protection unit to form a moisture absorption layer together, forming a nozzle layer and a nozzle on the protection unit, and forming the ink feed hole.

And preferably, the interlayer insulating layer may be formed of boron phosphorus silicate glass.

Also preferably the protective part may comprise an anti cavitation layer of tantalum.

Also preferably, the protective part may include a metal layer protective layer formed of silicon nitride under the anti-cavitation layer.

In another aspect of the method for manufacturing an inkjet printer according to the present invention, forming an interlayer insulating layer on a substrate, forming a trench outside the periphery of a region where an ink feed hole is to be formed in the interlayer insulating layer, Forming a moisture absorption prevention layer by filling a moisture absorption prevention material, forming at least one metal layer on an outer side of the moisture absorption prevention layer on the interlayer insulating layer, forming a protection part on the metal layer, and protecting part And forming a nozzle layer and a nozzle thereon, and forming the ink feed hole.

And preferably, the interlayer insulating layer is made of boron phosphorus silicate glass.

Also preferably, the moisture absorption material is stainless, nickel, monel, hastelloy, lead, aluminum, tin, titanium, tantalum. tantalum and any of these alloys.

In another aspect of the method for manufacturing an inkjet printer according to the present invention, forming an interlayer insulating layer on a substrate, forming at least one metal layer on the interlayer insulating layer, and forming the interlayer insulating layer on the interlayer insulating layer Forming an ink feed hole to one side to the substrate, forming a protective part having a stepped moisture absorption prevention part between the metal layer and the ink feed hole on the metal layer, and forming a nozzle layer and a nozzle on the protective part And etching the substrate to allow the ink feed hole to pass therethrough.

Preferably, a metal layer insulating layer may be formed between the metal layer and the protective part.

Also preferably, the interlayer insulating layer may be formed of boron phosphorus silicate glass.

Also preferably, the protective part may include an anti-cavitation layer made of tantalum and a metal layer protective layer formed of silicon nitride under the anti-cavitation layer.

Also preferably, the moisture absorption prevention portion may be tantalum.

Also preferably, the moisture absorption prevention part may include silicon nitride formed under the tantalum.

Also preferably, the ink feed hole may have an inner diameter formed on upper substrate layers larger than an inner diameter formed on the substrate.

Hereinafter, with reference to the accompanying drawings will be described embodiments of the inkjet printhead and its manufacturing method according to the present invention.

The following embodiments of the present invention are provided to fully understand the technical details of the present invention. Thus, if necessary, the embodiment may be embodied in other modified forms not mentioned below.

Description of the structure or method that is equally mentioned in the different embodiments of the following embodiments will be described in detail in the above-described embodiment, and repeated description as possible will be omitted. In addition, the descriptions and the drawings of each embodiment exaggerate the thickness, size, or area of each component to help technical understanding. For the same configuration, the same reference numerals are used in each embodiment, and the other reference numerals are identically used in other embodiments. 1 is referred to as the planar configuration for the first embodiment, but the planar configuration is similar to that of FIG. Therefore, the planar configuration of the remaining embodiments other than the first embodiment will be understood with reference to FIG.

(First embodiment)

FIG. 1 illustrates a planar structure of an inkjet printer head in a state in which a nozzle layer is removed to facilitate understanding of an embodiment of the present invention, and FIG. 2 includes a nozzle layer in the inkjet printer head of FIG. 1. It is sectional drawing shown according to the state shown.

Referring to FIG. 1 and FIG. 2 together, the inkjet printer head includes a substrate 100. The substrate 100 may be a silicon wafer having a thickness of several hundred μm. A portion of the upper surface of the substrate 100 is provided with a logic region 130 as a driving element for driving the heat generating layer 160, which is a pressure generating portion inside the head.

The logic region 130 may be formed by a complementary metal-oxide-semiconductor (CMOS) process. For this CMOS process, reference may be made to Korean Patent Application Publication No. 10-2004-0054432 filed by the present applicant.

As shown in FIGS. 2 and 3A, an oxide layer 141 (field oxide) is formed on a substrate 100 by a chemical vapor deposition (CVD) or a thermal process. An interlayer insulating layer 142 (ILD: Inter Layer Dielectrics) is formed on the oxide layer 141. The interlayer insulating layer 142 is made of BPSG (Boron Phosphorus Silicate Glass). The interlayer insulating layer 142 may be formed by chemical vapor deposition. Preferably, it may be formed by Atmosperic Pressure Chemical Vapor Deposition (APCVD).

As illustrated in FIGS. 2 and 3B, metal layers 151, 152, and 160 are formed on the interlayer insulating layer 142. The metal layers 151, 152, 160 include a first metal wiring layer 151 formed on a portion of the interlayer insulating layer 142. The first metal wiring layer 151 may be deposited by sputtering after etching a pattern through a lithography process. The first metal wiring layer 151 may use titanium (Ti), titanium nitride (TiN), or aluminum (Al).

Although not shown in the figure, the first metal wiring layer 151 may be connected to the logic region 30. The metal wiring layer insulating layer 170 (IMD: Inter Metal Dielectrics) is formed on the first metal wiring layer 151. The metal wiring layer insulating layer 170 may form oxides by plasma enhanced chemical vapor deposition (PECVD).

Vias 153 (Via) are formed in the metal wiring layer insulating layer 170 to the first metal wiring layer 151. The via 153 may be tapped with tungsten (W) by low pressure CVD (LPCVD) or atomic layer deposition (ALD).

The second metal wiring layer 152, which is a metal layer contacted through the via 153, and the heat generating resistor layer 160, which is a pressure generating portion, are formed on the metal wiring layer insulating layer 170. The second metal wiring layer 152 and the heating resistance layer 160 may be formed together or separately on the metal wiring layer insulating layer 170.

The heat resistance layer 160 is a polysilicon doped with an impurity ion or an alloy containing a high resistance metal such as tantalum or tungsten, a high resistance metal, or a high resistance metal such as tantalum nitride (TaN) or tantalum aluminum (TaAl). It can be formed as. The second metal wiring layer 152 and the heating resistance layer 160 may be formed by sputtering like the first metal wiring layer 151. In the present embodiment, the heat generating layer 160 is arranged in two rows, but is not limited thereto.

A trench 183 is formed in the periphery of the ink feed hole 101 on the metal wiring layer insulating layer 170 to surround the ink feed hole 101. The trench 183 may be formed by dry etching. Reactive ion etching (RIE) and inductive coupled plasma (ICP) etching may be employed as the dry etching. And the diameter of the trench 183 may be formed to approximately 5-10㎛. In addition, the depth may be formed to expose the substrate 100, and at least the interlayer insulating layer 142 may be etched.

As shown in FIGS. 2 and 3C, the protection unit 180 is filled on the metal wiring layer insulating layer 170 to cover the heating resistance layer 160 and the second metal wiring layer 152 at the same time. (Passivation layer) is formed. The protection unit 180 is to protect the layers 152 and 160 formed at the bottom, and protects the layers 152 and 160 from external temperature and moisture.

The protection unit 180 may include a metal layer protection layer 181 made of silicon nitride (SiN _X ) using a plasma enhanced chemical vapor deposition process. The metal layer protective layer 181 serves to protect the lower metal layers 151, 152 and 160. When the metal layer protective layer 181 is formed in the trench 183, it is appropriate that the thickness is formed from the substrate 100, which is at least the bottom of the trench 183, to the oxide layer 141, along the profile of the trench 183. It is preferred to be formed conformally.

2 and 3D, the protection unit 180 includes an anti-cavitation layer 182 formed of tantalum on the metal layer protection layer 181 made of silicon nitride. This anti-cavitation layer 182 is for protecting the layers formed below from the high pressure of several hundred atmospheres that occur when the bubble shrinks. The anti-cavitation layer 182 may be deposited by sputtering, and is also formed inside the trench 183 in which the silicon nitride layer 181 is deposited when the deposition is performed.

Accordingly, the silicon nitride 191 and the tantalum 192 are sequentially formed in the trench 183 to form a moisture absorption prevention layer 190, which is a moisture absorption prevention portion in a vertical state between the ink feed hole 101 and the respective layers. And the blocking of moisture is mainly achieved by the tantalum 192 which is gapped when forming the anti cavitation layer 182.

In general, tantalum is known to minimize corrosion and interfacial peeling due to moisture. In other words, oxidation is not performed well and is not eroded by excess acid. Therefore, even when directly exposed to the ink almost no corrosion occurs excellent moisture-proof function. Accordingly, the moisture absorption prevention layer 190 effectively blocks the moisture absorbed through the interlayer insulating layer 142 as the end is exposed to the ink feed hole 101 side.

Thereafter, as illustrated in FIGS. 2 and 3E, an ink feed hole 101 is formed. When forming the ink feed hole 101, the remaining portion 102 (remaining layer) of a predetermined thickness is left without penetrating the substrate 100 completely. The ink feed hole 101 formed at this time is formed inside the moisture absorption prevention layer 190. The ink feed hole 101 may be formed by a self-reinforcing plasma etching or an inductively coupled plasma etching process.

Thereafter, the chamber layer 110 is formed. The chamber layer 110 is applied by a lamination method of forming a sacrificial layer 124 on the ink feed hole 101 and then pressing the photosensitive dry film layer by pressing the photosensitive dry film layer on the upper portion of the protection unit 180. . As the photosensitive dry film, a Dupont product, VACEL or RISTON, may be employed.

The nozzle layer 120 is formed on the chamber layer 110. At least one nozzle 121 is formed in the nozzle layer 120. The nozzle layer 120 is formed by nickel electrolytic plating, micro punching, or polishing process. The nozzles 121 formed in the nozzle layer 120 are aligned to be located directly above the chamber 111 and the heat generating layer 160.

Thereafter, the remaining portion 102 is formed by etching the ink feed hole 101 to penetrate the ink feed hole 101, and the ink flow path 123 is formed by removing the sacrificial layer 124. The head is completed as shown. The sacrificial layer 102 may form the sacrificial layer 102 with organic compounds and may be removed using a solvent.

The residue 102 may be removed from the back surface of the substrate 100 using a lithography process and an etching process. Alternatively, the sacrificial layer 124 may be removed after removal.

(Second embodiment)

As shown in FIGS. 4 and 5A, the inkjet printer head includes a substrate 200. A portion of the upper surface of the substrate 200 is formed with a logic region 230 that is a driving circuit for driving the heat generating resistor layer 260, which is a pressure generating part inside the head. An oxide layer 241 (field oxide) and an interlayer insulating layer 242 are formed on the substrate 200.

As shown in FIGS. 4 and 5B, metal layers 251, 252, and 260 are formed on the interlayer insulating layer 242. The metal layers 251, 252, and 260 include a first metal wiring layer 251 formed on a portion of the interlayer insulating layer 242. The metal wiring layer insulating layer 270 is formed on the first metal wiring layer 251. Via 253 (Via) is formed in the metal wiring layer insulating layer 270 to the first metal wiring layer 251, and the second metal wiring layer 252, which is another metal layer contacted through the via 253, is formed. The metal wiring layer insulating layer 270 is formed. A heating resistance layer 260, which is a pressure generating part included in the metal layer, is formed on the metal wiring layer insulating layer 270 together with or separately from the second metal wiring layer 252. Up to this point, the process can be performed in the same manner as in the first embodiment.

Thereafter, the protection part 280 is formed on the metal wiring layer insulating layer 270 to cover the heating resistance layer 260 and the second metal wiring layer 252. The protection part 280 includes a metal layer protection layer 281 made of silicon nitride (SiN _X ) using a plasma enhanced chemical vapor deposition process. The metal layer protective layer 281 serves to protect the layers 252 and 260 formed thereunder.

As shown in FIGS. 4 and 5C, the trenches 283 and trenches surround the ink feed holes 201 around the portions where the ink feed holes 201 are to be formed by the metal layer protective layer 281. Is formed. The trench 283 is formed by dry etching. And the diameter of the trench 283 may be formed to approximately 5-10㎛. In addition, the depth may be formed to the extent that the substrate 200 is exposed and at least deep enough to remove the interlayer insulating layer 242.

As shown in FIGS. 4 and 5D, an anti cavitation layer 282 included in the protection part 280 is formed on the upper portion of the metal layer protection layer 281 by sputtering with tantalum. In this case, the trench 283 is formed gap-filled or conformally by tantalum by forming the anti-cavitation layer 282. Therefore, the moisture absorption layer 290 is disposed between the ink feed hole 201 and the respective layers in a vertical state and is a moisture absorption portion of tantalum.

Thereafter, as illustrated in FIGS. 4 and 5E, the ink feed hole 201, the chamber layer 210, the chamber 211, and the nozzle layer 220 having the nozzle 221 are formed in the same manner as in the first embodiment. The head is completed.

(Third Embodiment)

As shown in FIGS. 6 and 7A, the inkjet printer head has a substrate 300. A portion of the upper surface of the substrate 300 is formed with a logic region 330 which is a driving circuit for driving the pressure generating part inside the head. An oxide layer 341 and an interlayer insulating layer 342 are formed on the substrate 300. Up to this point, it may proceed in the same manner as in the first embodiment.

6 and 7B, after the interlayer insulating layer 342 is formed, the trench is formed to surround the ink feed hole 301 around the ink feed hole 301 of the interlayer insulating layer 342. 343). This trench 343 is formed by a lithography process and a dry etching process. And the diameter of the trench 343 may be formed to approximately 5-10㎛. The trench 343 may be formed by etching away only a portion of the interlayer insulating layer 342. Alternatively, the trench 343 may be etched to expose the substrate 300.

6 and 7C, the trench 343 is gap-filled with a corrosion-resistant metal or an alloy thereof to form a moisture absorption prevention layer 390 that is a moisture absorption prevention portion. That is, the moisture absorption layer 390 is stainless, nickel, monel, hastelloy, lead, aluminum, tin, titanium, tantalum tantalum) and corrosion resistant metals of any of these alloys or of other materials not mentioned may be employed. When the moisture absorption prevention layer 390 is deposited, the degree of corrosion resistance may be improved by controlling the reaction gas.

The moisture absorption prevention layer 390 is formed by forming a photomask to expose the trench 343 on the interlayer insulating layer 342 and then gap-filling the corrosion-resistant metal by sputtering the trench 343. After the photomask is removed, the first metal wiring layer 351 is formed on the upper side, so that a planarization process using chemical mechanical polishing (CMP) may be applied.

6 and 7D, metal layers 351, 352, and 360 are formed on the interlayer insulating layer 342. The metal layers 351, 352, and 360 include a first metal wiring layer 351 formed on a portion of the interlayer insulating layer 342. A metal wiring layer insulating layer 370 is formed on the first metal wiring layer 351, and vias 353 (Via) are formed in the metal wiring layer insulating layer 370 to the first metal wiring layer 351. The second metal wiring layer 352, which is another metal layer contacted through the via 353, is formed on the metal wiring layer insulating layer 370.

The heating resistance layer 360, which is formed on the metal wiring layer insulating layer 370 together with or separately from the second metal wiring layer 352 and is included in the metal layer, is formed. Thereafter, the protection part 380 is formed on the metal wiring layer insulating layer 370 to cover the heating resistance layer 360 and the second metal wiring layer 352. The protective part 380 is a metal layer protective layer 381 made of silicon nitride (SiN _X ) and an anti-cavitation layer 382 formed of tantalum on top of the metal layer protective layer 381 using a plasma enhanced chemical vapor deposition process. ). After that, the ink feed hole 301, the chamber 311, the chamber layer 310, and the nozzle layer 320 having the nozzle 321 formed thereon are formed in the same manner as in the first embodiment to complete the head.

Fourth Embodiment

As shown in FIGS. 8, 9A, and 9B, the inkjet printer head has a substrate 400. A portion of the upper surface of the substrate 400 has a logic region 430 formed of a driving circuit for driving the heat generating layer 460, which is a pressure generating portion inside the head. In turn, an oxide layer 441 and an interlayer insulating layer 442 are formed, and then a first metal wiring layer 451, a via 453, a second metal wiring layer 452, and a heat generation, are metal layers on the interlayer insulating layer 442. The resistive layer 460 is formed. Up to this point, it can be performed in the same manner as in the first embodiment.

As shown in FIGS. 8 and 9C, an ink feed hole 401 is partially formed on the substrate 400. In this case, the ink feed hole 401 is formed by dry etching from the interlayer insulating layer 442 to the surface of the substrate 400. The ink feed hole 401 is then formed larger than the diameter of the remaining ink feed hole 401 formed through the substrate 400 (see FIGS. 9C and 9F, D1> D2). That is, the ink feed hole 401 allows the step 483 to be formed up and down at the time of final formation.

As shown in FIGS. 8 and 9D, the protection unit 480 fills the ink feed hole 401 on the metal wiring layer insulating layer 470 and covers the heating resistance layer 460 and the second metal wiring layer 452. ). The protection part 480 is for protecting the layers 451, 452 and 460 formed under the protection part 480 and includes a metal layer protection layer 481 made of silicon nitride. The metal layer protective layer 481 may be formed from the bottom of the step 483 of the partially etched ink feed hole 401 to the oxide layer 441 when formed in the ink feed hole 401.

8 and 9E, the protection part 480 includes an anti cavitation layer 482 of tantalum deposited onto the metal layer protection layer 481. The anti-cavitation layer 482 is formed by sputtering on top of the metal layer protective layer 481. Accordingly, the two layers 481 and 482 form a moisture absorption prevention layer 490 that is a moisture absorption prevention portion that is stepped inside the ink feed hole 401. In this case, the anti-cavitation layer 482 may have a lower end formed on or below the surface of the oxide layer 41, and the thickness thereof may be greater than or equal to the interlayer insulating layer 442.

Thereafter, as shown in FIGS. 8 and 9F, the ink feed hole 01 is completely penetrated by dry etching. In this case, in order for the moisture absorption prevention layer 490 to be effectively maintained, it is appropriate to etch the substrate 400 to a diameter D2 smaller than the diameter D1 of the ink feed hole 401 that is already formed. After that, the head is completed by forming the chamber 411, the chamber layer 410, and the nozzle layer 420 having the nozzle 421 in the same manner as in the first embodiment.

In the detailed description of the invention as described above, specific embodiments have been described. However, many modifications are possible without departing from the scope of the invention. Therefore, the present invention is not limited to the embodiments of the present invention, all of the configurations included in the technical idea of the present invention should be considered to be included in the technical scope of the present invention.

Since the inkjet printer head and its manufacturing method according to the present invention as described above can prevent the moisture of the ink from penetrating into the metal wiring layer, the logic region or the pressure driving part from the layer having hygroscopicity, interlayer separation, electrical short, malfunction of the circuit. And it is possible to prevent the occurrence of defects, such as corrosion of the metal wiring layer, thereby improving the life and reliability of the head, as well as increase the production yield of the inkjet printer head can increase productivity and reduce manufacturing costs Will be.

Claims (28)

A substrate on which ink feed holes are formed; An interlayer insulating layer formed around the ink feed hole on the substrate; At least one metal layer of metal on the interlayer insulating layer; And a moisture absorption preventing portion formed between the ink feed hole and the metal layer to prevent moisture from being transferred from the ink in the ink feed hole to the metal layer. The inkjet printer head of claim 1, wherein a logic area is formed in the substrate, and the moisture absorption prevention part is formed between the ink feed hole and the logic area. The inkjet printer head according to any one of claims 1 to 3, wherein the moisture absorption prevention portion is a moisture absorption prevention layer filled in part of the interlayer insulating layer. The inkjet printer head of claim 3, wherein the interlayer insulating layer is made of Boron Phosphorus Silicate Glass (BPSG). The method of claim 3, wherein the moisture absorption layer is stainless, nickel, monel, hastelloy, lead, aluminum, tin, titanium. The inkjet printer head, characterized in that by selecting any one of, tantalum and alloys thereof. The inkjet printer head of claim 1, wherein the metal layer comprises a first metal wiring layer, a second metal wiring layer in contact with the first metal wiring layer, and a heat generating resistance layer for generating pressure. 7. The substrate of claim 6, wherein the substrate comprises an oxide layer, the interlayer insulating layer formed on the oxide layer, the first metal wiring layer formed on the interlayer insulating layer, and a metal wiring layer insulating layer formed on the first metal wiring layer. The second metal wiring layer formed on the metal wiring layer insulating layer, the heating resistance layer formed at a position different from the second metal wiring layer on the metal wiring layer insulating layer, the second metal wiring layer and the heating resistor layer. An inkjet printer head, characterized in that provided with a protective portion formed on. The inkjet printer head of claim 7, wherein the moisture absorption prevention part includes a trench extending from the protection part to the substrate around the ink feed hole, and a moisture absorption prevention layer filled in the trench. The anti-cavitation layer of claim 8, wherein the protection part comprises a metal layer protection layer made of silicon nitride and an anti-cavitation layer formed on the metal layer protection layer and formed on the second metal wiring layer and the heating resistance layer. And the moisture absorption prevention layer is made of tantalum and formed together at the time of forming the anti-cavitation layer. The method of claim 8, wherein the protective portion comprises a metal layer protective layer and an anti cavitation (Anti cavitation) layer, wherein the moisture absorption layer is formed in the formation of the metal layer protective layer and the anti cavitation layer in the trench, respectively Inkjet printer head. The inkjet printer head of claim 10, wherein the metal layer protection layer is made of silicon nitride, and the anti-cavitation layer is made of tantalum. The method of claim 1, wherein a protective part is formed on the metal layer, and the moisture absorption preventing part includes a stepped stepped around the ink feed hole toward the substrate, and a moisture absorption preventing layer formed together with the protective part on the stepped step. Inkjet printer head. The inkjet printer head of claim 12, wherein the protection part comprises a metal layer protection layer made of silicon nitride, and an anti cavitation layer made of tantalum and stacked on the metal layer protection layer. The inkjet printer head of claim 12, wherein the moisture absorption layer is formed by stacking silicon nitride and tantalum. Forming an interlayer insulating layer on the substrate; Forming a metal layer on the interlayer insulating layer; Forming a metal wiring layer insulating layer on the metal layer; Forming a trench to a surface of the substrate by etching the metal wiring layer insulating layer around the outer side of the region where the ink feed hole is to be formed on one side of the metal wiring layer; Filling the trench on the metal wiring layer insulating layer to form a protection unit to form a moisture absorption prevention layer on the trench; And forming a nozzle layer and a nozzle on the protection part, and forming the ink feed hole. 16. The method of claim 15, wherein the interlayer insulating layer is formed of boron phosphorus silicate glass. 16. The method of claim 15, wherein the protection part comprises an anti-cavitation layer of tantalum. 18. The method of claim 17, wherein the protection part comprises a metal layer protection layer formed of silicon nitride under the anti-cavitation layer. Forming an interlayer insulating layer on the substrate; Forming a trench outside the periphery of the region where ink feed holes are to be formed in the interlayer insulating layer; Filling the trench with a moisture absorption material to form a moisture absorption prevention layer; Forming at least one metal layer on the interlayer insulating layer to the outside of the moisture absorbing layer; Forming a protective part on the metal layer; And forming a nozzle layer and a nozzle on the protection part, and forming the ink feed hole. 20. The method of claim 19, wherein the interlayer insulating layer is made of boron phosphorus silicate glass. 20. The method of claim 19, wherein the moisture absorption material is stainless, nickel, monel, hastelloy, lead, aluminum, tin, titanium. ), Tantalum and an alloy thereof, wherein the ink jet printer head is selected. Forming an interlayer insulating layer on the substrate; Forming at least one metal layer on the interlayer insulating layer; Forming an ink feed hole to the substrate on one side of the metal layer on the interlayer insulating layer; Forming a protection part having a stepped moisture absorption prevention part between the metal layer and the ink feed hole on the metal layer; And forming a nozzle layer and a nozzle on the protective part, and etching the substrate to allow the ink feed hole to pass therethrough. 23. The method of claim 22, wherein a metal layer insulating layer is formed between the metal layer and the protective part. 23. The method of claim 22, wherein the interlayer insulating layer is made of boron phosphorus silicate glass. 23. The method of claim 22, wherein the protection part comprises an anti-cavitation layer made of tantalum and a metal layer protection layer formed of silicon nitride under the anti-cavitation layer. 23. The method of claim 22, wherein the moisture absorption prevention unit is made of tantalum. 27. The method of claim 26, wherein the moisture absorption prevention part comprises silicon nitride formed under the tantalum. 23. The method of claim 22, wherein the ink feed hole has an inner diameter formed on upper substrate layers greater than an inner diameter formed on the substrate.

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