KR100661716B1 - Substrate for growing light emitting device, device having three dimentional structure light emitting layer and method for fabricating the same - Google Patents

Abstract

The present invention relates to a light emitting device having a light emitting device growth substrate, a light emitting device having a light emitting layer having a three-dimensional structure grown on the substrate, and a manufacturing method thereof; A mask layer formed on the support plate and having a plurality of openings spaced apart from each other; A substrate for light emitting device growth, comprising a plurality of semiconductor structures formed on an upper portion of the support plate exposed to the openings and covering a portion of the mask layer, and having a plurality of semiconductor structures having polarity and spaced apart from each other. To manufacture the device using.

Therefore, the present invention has the effect of improving the light output by increasing the light emitting area by forming the light emitting layer along the shape of the three-dimensional semiconductor structure spaced apart from each other.

Light emitting element, three-dimensional, active layer, mask, opening, shape

Description

 Substrate for growing light emitting device, device having three dimentional structure light emitting layer and method for fabricating the same}

1 is a cross-sectional view illustrating a structure of a light emitting diode according to the prior art.

2 is a cross-sectional view illustrating another structure of a light emitting diode according to the prior art.

3A to 3C are cross-sectional views of a substrate for forming a device having a light emitting layer having a three-dimensional structure according to the present invention.

4 is a cross-sectional view of another substrate for forming a device having a light emitting layer having a three-dimensional structure according to the present invention.

5A and 5B are cross-sectional views of yet another substrate for forming a device having a light emitting layer having a three-dimensional structure according to the present invention.

6A through 6E are cross-sectional views illustrating a manufacturing process of a device having a light emitting layer having a three-dimensional structure according to a first embodiment of the present invention.

7 is a cross-sectional view of a device having a light emitting layer having a three-dimensional structure according to a second embodiment of the present invention.

8 is a cross-sectional view of a device having a light emitting layer having a three-dimensional structure according to a third embodiment of the present invention.

9 is a cross-sectional view of a device having a light emitting layer having a three-dimensional structure according to a fourth embodiment of the present invention.

10A to 10E are cross-sectional views illustrating a manufacturing process of a device having a light emitting layer having a three-dimensional structure according to a fifth embodiment of the present invention.

11A through 11D are perspective views showing semiconductor layer shapes of a three-dimensional structure according to the present invention.

12 is a plan view showing a semiconductor layer having a three-dimensional structure formed on a substrate according to the present invention.

13 is a plan view of a semiconductor layer having another three-dimensional structure formed on a substrate according to the present invention;

14 is a plan view showing one shape of a mask layer formed on a substrate according to the present invention;

15 is a photographic image of a semiconductor layer having a three-dimensional structure formed on a substrate according to the present invention;

16 is a photograph photographing another semiconductor layer of a three-dimensional structure formed on a substrate according to the present invention;

17 is a photograph photographing another semiconductor layer of a three-dimensional structure formed on a substrate according to the present invention.

18 is a conceptual diagram illustrating the light emitting area of a light emitting layer having a three-dimensional structure according to the present invention.

<Description of the symbols for the main parts of the drawings>

100,180,181: support plate 101: groove

102 groove 110 semiconductor layer

120: mask layer 121,121a, 121b: opening

130,131,135,140,141,141a, 150: semiconductor structure

170, 170: active layer 190: electrode for ohmic contact and reflection

200,210: electrode 250: insulating layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device growth substrate, a light emitting device having a light emitting layer having a three-dimensional structure grown on the substrate, and a method of manufacturing the same. More specifically, the light emitting layer is formed by forming a light emitting layer along a shape of a three-dimensional semiconductor structure spaced apart from each other. A light emitting device growth substrate capable of increasing light output by increasing an area, a light emitting device having a light emitting layer having a three-dimensional structure grown on the substrate, and a manufacturing method thereof.

In general, a light emitting diode is a single wavelength light source having various applications such as a backlight of a display, a traffic light at an intersection or a crossing, an electric signboard, and the like.

Such light emitting diodes are known to have many advantages such as high brightness and reliability, low power consumption and long life.

In addition, the light emitting diode is manufactured of a GaN-based compound semiconductor having a large energy band gap of a direct transition type, and a lot of research and development has been conducted and commercialized as a light source in an ultraviolet (UV), blue, and green wavelength region. .

On the other hand, in order to improve performance as a light source, the amount of light output from the device must be increased.

Therefore, recently, researches for implementing light emitting diodes having high light output have been conducted.

1 is a cross-sectional view illustrating a structure of a light emitting diode according to the prior art, in which an n-compound semiconductor layer 11, an active layer 12, and a p-compound semiconductor layer 13 are sequentially formed on an sapphire substrate 10. Stacked; Mesa is etched from the p-compound semiconductor layer 13 to a part of the n-compound semiconductor layer 11; An n-electrode 12 is formed on the mesa-etched n-compound semiconductor layer 11; The light emitting diode 20 is implemented with the p-electrode 15 formed on the p-compound semiconductor layer 14.

2 is a cross-sectional view for explaining another structure of the light emitting diode according to the prior art, in which an active layer 32 and a p-compound semiconductor layer 33 are sequentially stacked on the n-compound semiconductor layer 31; An n-electrode 34 is formed under the n-compound semiconductor layer 31; The p-electrode 35 is formed on the p-compound semiconductor layer 33 to form a light emitting diode.

The mesa-etched light emitting diode as shown in FIG. 1 has a structure in which electrodes are formed in an upper direction of the device, and the light emitting diode as shown in FIG. 2 has a structure in which electrodes are formed in upper and lower directions of the device.

Such a conventional light emitting diode is made of a GaN-based compound semiconductor, which is mostly grown in the form of a two-dimensional film on a flattened substrate.

Therefore, the area of the active layer in which light output is generated is limited to the area of the 'light emitting structure' protruding by mesa etching in the light emitting diode of FIG. 1, and in the light emitting diode of FIG. 2, the device structure is a 'light emitting structure'. Limited to the area of

Therefore, in the light emitting diode of the prior art, there is a problem in that there is a limit in improving the light output due to the structural association, the light emitting area is limited.

The present invention is to solve the above problems, by forming a light emitting layer along the shape of the three-dimensional semiconductor structure spaced apart from each other, the light emitting device growth substrate that can increase the light output by increasing the light emitting area, which is grown on the substrate An object of the present invention is to provide a light emitting device having a light emitting layer having a three-dimensional structure and a manufacturing method thereof.

A first preferred aspect for achieving the above objects of the present invention is

A support plate;

A mask layer formed on the support plate and having a plurality of openings spaced apart from each other;

A substrate for light emitting device growth, comprising a plurality of semiconductor structures formed on an upper portion of the support plate exposed to the openings and covering a portion of the mask layer, and having a plurality of semiconductor structures having polarity and spaced apart from each other. This is provided.

A second preferred aspect for achieving the above objects of the present invention is

A support plate formed at an upper portion of the support plate and having a plurality of protrusions spaced apart from each other;

There is provided a light emitting device growth substrate which is formed on top of each of the plurality of protrusions, extends on a part of the groove to rise from the groove, has a three-dimensional structure, and comprises a plurality of semiconductor structures having polarity. do.

A third preferred aspect for achieving the above objects of the present invention is

A first semiconductor layer having a first polarity;

A mask layer formed on the first semiconductor layer and having a plurality of openings spaced apart from each other;

A second semiconductor layer having a three-dimensional structure surrounding a portion of the mask layer on the first semiconductor layer exposed to the openings, spaced apart from each other, and having the same polarity as the first polarity of the first semiconductor layer. A plurality of semiconductor structures;

A structure including an active layer, a third semiconductor layer having a second polarity different from the first polarity, and an ohmic contact and reflection electrode along a shape of the semiconductor structure;

A first electrode having an upper portion flattened around the ohmic contact and reflection electrode;

A light emitting device including a light emitting layer having a three-dimensional structure including a second electrode formed under the first semiconductor layer is provided.

A fourth preferred aspect for achieving the above objects of the present invention is

An electrode;

An insulating layer formed on the electrode and having a plurality of openings;

A plurality of semiconductor structures having a three-dimensional structure filled in the openings of the insulating layer and enclosing an upper portion of the insulating layer, the semiconductor structures being spaced apart from each other and having polarities;

A structure including an active layer, a third semiconductor layer having a second polarity different from the first polarity, and an ohmic contact and reflection electrode along a shape of the semiconductor structure;

Provided is a light emitting device including a light emitting layer having a three-dimensional structure including an electrode having a flattened upper surface surrounding the ohmic contact and reflective electrode.

A fifth preferred aspect for achieving the above objects of the present invention is

Forming a first semiconductor layer having a first polarity on the support plate, forming a mask layer having a plurality of openings spaced apart from each other on the first semiconductor layer, and exposing the first semiconductor layer; A plurality of semiconductor structures having a three-dimensional structure surrounding a portion of the mask layer on the first semiconductor layer and having a same polarity as the first polarity of the first semiconductor layer and spaced apart from each other are formed. Making a substrate;

Sequentially forming an active layer, a third semiconductor layer having a second polarity different from the first polarity, and an ohmic contact and reflection electrode along the shapes of the plurality of semiconductor structures of the substrate;

Forming a first electrode surrounding the ohmic contact and reflective electrode;

Detaching the support plate;

Provided is a method of manufacturing a light emitting device having a light emitting layer having a three-dimensional structure including the step of forming a second electrode under the first semiconductor layer exposed by leaving the support plate.

The sixth preferred aspect for achieving the above objects of the present invention is

A support plate, a mask layer having a plurality of openings formed on the support plate and spaced apart from each other, and a three-dimensional structure formed on the support plate exposed to the respective openings and covering a part of the mask layer. Preparing a substrate on which a plurality of semiconductor structures comprising a plurality of first semiconductors having one polarity are formed;

Sequentially forming an active layer, a second semiconductor layer having a second polarity different from the first polarity, and an ohmic contact and reflection electrode along the shapes of the plurality of semiconductor structures;

Forming a first electrode surrounding the ohmic contact and reflective electrode;

Removing the mask layer by a wet etching process, and leaving the support plate to protrude a plurality of semiconductor structures formed in the mask layer opening;

Forming an insulating layer between the bottoms of the plurality of protruding semiconductor structures and exposing the bottom surfaces of the plurality of semiconductor structures on a surface from which the support plate is separated;

A method of manufacturing a light emitting device having a light emitting layer having a three-dimensional structure including forming a second electrode on the insulating layer and a lower surface of a plurality of exposed semiconductor structures is provided.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

3A to 3C are cross-sectional views of a substrate for forming a device having a light emitting layer having a three-dimensional structure according to the present invention. First, a substrate for forming a device having a light emitting layer having a three-dimensional structure includes a support plate 100; A first semiconductor layer 110 having a polarity formed on the support plate 100; A mask layer 120 formed on the first semiconductor layer 110 and provided with a plurality of openings 121 spaced apart from each other; It is formed on the first semiconductor layer 110 exposed to each of the openings 121, has a three-dimensional structure surrounding a portion of the mask layer 120, and the polarity of the first semiconductor layer 110 A second semiconductor layer having the same polarity and composed of a plurality of semiconductor structures 130 spaced apart from each other.

The support plate 100 is preferably formed of any one of sapphire, silicon carbide (SiC), gallium arsenide (GaAs) and gallium nitride.

In addition, the first and second semiconductor layers 110 are preferably semiconductor layers containing the same material, and the same material is preferably GaN.

In addition, the mask layer 120 is preferably formed of an oxide film.

In addition, the polarity is an anode or a cathode. In this case, when the N-type dopant is doped in the first and second semiconductor layers 110, the polarity of the first and second semiconductor layers 110 becomes an anode. .

Therefore, as shown in FIG. 3A, when the second semiconductor is grown on the first semiconductor layer 110 exposed to the openings 121 of the mask layer 120, the second semiconductor is formed in the openings 121. As it fills in the lateral growth of the mask layer 120 adjacent to the openings 121.

At this time, when the growth of the second semiconductor continues, the second semiconductor grown in the openings 121 is coalesced and planarized on the mask layer 120.

However, in the structure of FIG. 3A, when the growth of the second semiconductor is stopped before the second semiconductors grown in the openings 121 are in contact with each other, a plurality of semiconductor structures including the second semiconductor layer having a three-dimensional structure 130 can be formed.

That is, the plurality of semiconductor structures of FIG. 3A are formed in a hexagonal pyramid shape.

The light emitting layer having a three-dimensional structure may be formed using the semiconductor structures 130 having a three-dimensional structure, which may be understood by referring to the description below.

On the other hand, the substrate of Figure 3b and the support plate 100; A mask layer 120 formed on the support plate 100 and having a plurality of openings 121 spaced apart from each other; It is formed on the support plate 100 exposed to each of the openings 121, has a three-dimensional structure surrounding a part of the mask layer 120, and has a plurality of semiconductor structures 140 having polarity.

In addition, the substrate of FIG. 3C includes a support plate 100 having a groove 101 formed thereon and a plurality of protrusions 102 spaced apart from each other in the groove 101; A plurality of semiconductor structures formed on an upper portion of each of the plurality of protrusions 102 and extending from a portion of the groove 101 to rise from the groove 101, have a three-dimensional structure, and have a polarity ( 150).

FIG. 4 is a cross-sectional view of another substrate for forming a device having a light emitting layer having a three-dimensional structure according to the present invention, which is a substrate made by performing the same process as that of FIG. 3A. If the lateral growth speed of the semiconductor layer is advanced faster than the method for the structure of FIG. 03A, a hexagonal pyramid-shaped structure is cut.

5A and 5B are cross-sectional views of another substrate for forming a device having a light emitting layer having a three-dimensional structure according to the present invention, wherein the substrate of FIG. 5A is exposed to openings 121 of the mask layer 120. Semiconductor structures spaced apart from each other by growing a second semiconductor over the layer 110, filling the second semiconductor inside the openings 121, and laterally growing a portion of the mask layer 120 adjacent to the openings 121. In the substrate of FIG. 3A in which 130 is formed, growth of the second semiconductor is continued so that the growth is stopped when the lower ends of the semiconductor structures 130 are coalesced.

That is, the substrate of FIG. 5A is a substrate in which '135' is formed by coalescing lower ends of side surfaces of the semiconductor structures 130 spaced apart from each other in the substrate of FIG. 3A.

In addition, the substrate of FIG. 5B is a substrate formed by incorporating side lower ends of the semiconductor structures 131 spaced apart from each other in the substrate of FIG. 4.

6A to 6E are cross-sectional views illustrating a manufacturing process of a device having a light emitting layer having a three-dimensional structure according to a first embodiment of the present invention. First, a first having a first polarity on the support plate 100 is illustrated. A semiconductor layer 110 is formed, and a mask layer 120 having a plurality of openings 121 spaced apart from each other is formed on the first semiconductor layer 110, and in each of the openings 121. A plurality of three-dimensional structures surrounding a part of the mask layer 120 on the exposed first semiconductor layer 110, having a same polarity as the first polarity of the first semiconductor layer 110 and spaced apart from each other The semiconductor structures 130 are formed.

The substrate thus formed is the same as the substrate of FIG. 3A.

Thereafter, the active layer 170, the third semiconductor layer 180 having the second polarity different from the first polarity, and the ohmic contact and reflection electrode 190 are sequentially formed along the shapes of the semiconductor structures 130. (FIGS. 6A and 6B).

Subsequently, a first electrode 200 surrounding the ohmic contact and reflection electrode 190 is formed (FIG. 6C).

Then, the support plate 100 is separated (FIG. 6D).

Here, when the support plate 100 is a sapphire substrate, it is removed by performing a laser lift-off process.

Finally, a second electrode 210 is formed below the first semiconductor layer 110 exposed by the support plate 100 being separated (FIG. 6E).

7 is a cross-sectional view of a device having a light emitting layer having a three-dimensional structure according to a second embodiment of the present invention, and includes a first semiconductor layer 110 having a first polarity; A mask layer 120 formed on the first semiconductor layer 110 and provided with a plurality of openings 121 spaced apart from each other; A three-dimensional structure surrounding a portion of the mask layer 120 is formed on the first semiconductor layer 110 exposed to the openings 121 and spaced apart from each other. A plurality of semiconductor structures 131 made of a second semiconductor layer having the same polarity as the first polarity; A structure in which an active layer (170), a third semiconductor layer (180) having a second polarity different from the first polarity, and an ohmic contact and reflection electrode (190) are formed along the shapes of the semiconductor structures (131); A first electrode 200 having a top planarized around the ohmic contact and reflection electrode 190; The second electrode 210 is formed under the first semiconductor layer 110.

In a second embodiment of the present invention it is manufactured using the substrate of FIG.

FIG. 8 is a cross-sectional view of a device having a light emitting layer having a three-dimensional structure according to a third embodiment of the present invention. The device of the third embodiment is manufactured using the substrate of FIG. 5A, and has a three-dimensional structure of hexagonal pyramids spaced apart from each other. Is formed, and the side lower end is coalesced.

The active layer 170, the third semiconductor layer 180 having a second polarity different from the first polarity, and the ohmic contact and reflection electrode 190 may be formed in the shape of the three-dimensional semiconductor structures 135. Formed.

9 is a cross-sectional view of a device having a light emitting layer having a three-dimensional structure according to a fourth embodiment of the present invention, wherein the device of the fourth embodiment of the present invention is manufactured using the substrate of FIG. 5B.

That is, as shown in FIG. 9, a three-dimensional structure of hexagonal pyramids spaced apart from each other and cut at an upper portion thereof is formed, and a plurality of semiconductor structures having a lower side of the side surface are formed. The active layer 170, the semiconductor layer 180, and the ohmic contact and reflection electrode 190 are formed along the shape of the three-dimensional structure.

10A to 10E are cross-sectional views illustrating a manufacturing process of a device having a light emitting layer having a three-dimensional structure according to a fifth embodiment of the present invention. First, a support plate 100 is provided; A mask layer 120 formed on the support plate 100 and having a plurality of openings 121 spaced apart from each other; A plurality of semiconductors are formed on the support plate 100 exposed to the openings 121, have a three-dimensional structure surrounding a part of the mask layer 120, and have a first semiconductor layer having a first polarity. A substrate as shown in FIG. 3B on which the structures 141 are formed is prepared.

Subsequently, an active layer 171, a second semiconductor layer 181 having a second polarity different from the first polarity, and an ohmic contact and reflection electrode 191 are sequentially formed along the shapes of the semiconductor structures 141. Form.

Thereafter, a first electrode 200 surrounding the ohmic contact and reflection electrode 191 is formed. (FIGS. 10A and 10B).

Next, the mask layer 120 is removed by a wet etching process, and the support plate 100 is separated to protrude lower portions of the plurality of semiconductor structures 141a formed in the opening of the mask layer 120. )

Here, when the support plate 100 is a sapphire substrate, it is removed by performing a laser lift-off process.

Subsequently, an insulating layer 250 is formed between the protruding lower portions of the semiconductor structure 141a on the surface from which the support plate 100 is separated, and the lower surfaces of the plurality of the semiconductor structures 141a are exposed. 10d)

Finally, a second electrode 210 is formed on the insulating layer 250 and the lower surfaces of the exposed plurality of semiconductor structures 141a (FIG. 10E).

Here, the second electrode 210 is formed as a transparent electrode.

Therefore, the device having the light emitting layer having the three-dimensional structure according to the fifth embodiment of the present invention includes an electrode 210; An insulating layer 250 formed on the electrode 210 and having a plurality of openings; A plurality of semiconductor structures 141 filled in the openings of the insulating layer 250 and having a three-dimensional structure surrounding the upper portion of the insulating layer 250, spaced apart from each other, and having a polarity; A structure including an active layer, a third semiconductor layer having a second polarity different from the first polarity, and an ohmic contact and reflection electrode along a shape of the semiconductor structure; It is configured to include an electrode having a flattened top wrapped around the ohmic contact and the reflective electrode.

11A to 11D are perspective views illustrating semiconductor layer shapes of a three-dimensional structure according to the present invention, wherein the semiconductor structures of the three-dimensional structure are formed in a hexagonal pyramid shape (FIG. 11A) or a hexagonal pyramid shape in which an upper portion is cut (FIG. 11B). .

11A and 11B are arranged in a point shape on the mask layer 120.

11C, 11D, and 13, the mask layer 120 may be formed in a shape of a three-dimensional structure such as '137,138' arranged in a stripe pattern.

Here, the shape of '137' is a semiconductor layer having a three-dimensional structure in which the upper portion is not cut, and '138' is a semiconductor layer having a three-dimensional structure in which the upper portion is cut.

FIG. 14 is a plan view illustrating a shape of a mask layer formed on a substrate according to the present invention, in which a mask layer 120 is formed on the first semiconductor layer 110 and has a plurality of openings 121a, spaced apart from each other. 121b) is formed into a pattern shape provided.

Here, the plurality of openings 121a and 121b may be spaced apart at regular intervals d.

At this time, it may be formed in a pattern having a point-like opening (121a), it may be formed in a pattern that is further provided with an annular opening (121b) at the edge (Edge).

FIG. 15 is a photograph showing a three-dimensional semiconductor layer formed on a substrate according to the present invention. As shown in FIG. 11A, three-dimensional semiconductor structures are formed in a hexagonal pyramid shape 130 and an upper portion as shown in FIG. 11B. It is a photograph figure of the hexagonal pyramid shape 131 cut | disconnected.

FIG. 16 is a photograph of another semiconductor layer having a three-dimensional structure formed on a substrate according to the present invention. FIG. 16 is a three-dimensional structure arranged in a stripe pattern. A photographic image of the semiconductor structures shape 137 is illustrated.

FIG. 17 is a photograph showing another semiconductor layer having a three-dimensional structure formed on a substrate according to the present invention. The shape of the three-dimensional structure arranged in a stripe pattern is shown in FIG. 11D. A photographic image of a three-dimensional semiconductor structure shape 138 is taken.

FIG. 18 is a conceptual view illustrating the light emitting area of the light emitting layer having the three-dimensional structure according to the present invention. The active layer 170 formed along the shape of the semiconductor layer 130 having the three-dimensional structure also has a three-dimensional structure.

Of course, the active layer 170 is formed in a thin thickness to have a three-dimensional structure.

Therefore, as in the prior art, when the active layer is laminated on a plane with one side of 'L', the length of one side of the light emitting surface is 'L', whereas in the present invention, since the active layer is formed in a three-dimensional structure, the one side of the emitting surface is As shown in Figure 18, the length of 'L1 + L2 + L3 + L4 + L5 + L6'.

Therefore, the present invention has the advantage of improving the light output by increasing the light emitting area by forming the light emitting layer in a three-dimensional structure.

As described above, the present invention has the effect of improving the light output by increasing the light emitting area by forming the light emitting layer along the shape of the three-dimensional semiconductor structure spaced apart from each other.

Although the invention has been described in detail only with respect to specific examples, it will be apparent to those skilled in the art that various modifications and variations are possible within the spirit of the invention, and such modifications and variations belong to the appended claims.

Claims (26)

delete delete delete delete delete delete delete delete delete delete A first semiconductor layer having a first polarity; A mask layer formed on the first semiconductor layer and having a plurality of openings spaced apart from each other; A second semiconductor layer having a three-dimensional structure surrounding a portion of the mask layer on the first semiconductor layer exposed to the openings, spaced apart from each other, and having the same polarity as the first polarity of the first semiconductor layer. A plurality of semiconductor structures; A structure including an active layer, a third semiconductor layer having a second polarity different from the first polarity, and an ohmic contact and reflection electrode along a shape of the semiconductor structure; A first electrode having an upper portion flattened around the ohmic contact and reflection electrode; A light emitting device comprising a light emitting layer having a three-dimensional structure including a second electrode formed under the first semiconductor layer. The method of claim 11, Each of the plurality of semiconductor structures spaced apart from each other, A light emitting device having a light emitting layer having a three-dimensional structure, wherein a lower side surface is integrated with neighboring semiconductor structures. An electrode; An insulating layer formed on the electrode and having a plurality of openings; A plurality of semiconductor structures having a three-dimensional structure filled in the openings of the insulating layer and enclosing an upper portion of the insulating layer, the semiconductor structures being spaced apart from each other and having polarities; A structure including an active layer, a third semiconductor layer having a second polarity different from the first polarity, and an ohmic contact and reflection electrode along a shape of the semiconductor structure; A light emitting device comprising a light emitting layer having a three-dimensional structure including an electrode which is flattened around the ohmic contact and the reflective electrode. The method of claim 11, The mask layer, A light emitting device comprising a light emitting layer having a three-dimensional structure, which is an oxide film. The method according to any one of claims 11 to 13, The semiconductor layer, A light emitting device comprising a light emitting layer having a three-dimensional structure, which is a semiconductor layer containing the same material. The method according to any one of claims 11 to 13, The semiconductor structures, A light emitting device having a light emitting layer having a three-dimensional structure, characterized in that it comprises a hexagonal pyramid shape or a hexagonal pyramid shape in which an upper portion is cut. The method according to any one of claims 11 to 13, The semiconductor structures, A light emitting element growth substrate, characterized in that arranged in a pattern of dots or stripe. Forming a first semiconductor layer having a first polarity on the support plate, forming a mask layer having a plurality of openings spaced apart from each other on the first semiconductor layer, and exposing the first semiconductor layer; A plurality of semiconductor structures having a three-dimensional structure surrounding a portion of the mask layer on the first semiconductor layer and having a same polarity as the first polarity of the first semiconductor layer and spaced apart from each other are formed. Making a substrate; Sequentially forming an active layer, a third semiconductor layer having a second polarity different from the first polarity, and an ohmic contact and reflection electrode along the shapes of the plurality of semiconductor structures of the substrate; Forming a first electrode surrounding the ohmic contact and reflective electrode; Detaching the support plate; A method of manufacturing a light emitting device having a light emitting layer having a three-dimensional structure including the step of forming a second electrode below the first semiconductor layer exposed by the support plate is separated. The method of claim 18, Each of the plurality of semiconductor structures spaced apart from each other, A method of manufacturing a light emitting device having a light emitting layer having a three-dimensional structure, wherein the lower side of the side surface is integrated with neighboring semiconductor structures. A support plate, a mask layer having a plurality of openings formed on the support plate and spaced apart from each other, and a three-dimensional structure formed on the support plate exposed to the respective openings and covering a part of the mask layer. Preparing a substrate on which a plurality of semiconductor structures comprising a plurality of first semiconductors having one polarity are formed; Sequentially forming an active layer, a second semiconductor layer having a second polarity different from the first polarity, and an ohmic contact and reflection electrode along the shapes of the plurality of semiconductor structures; Forming a first electrode surrounding the ohmic contact and reflective electrode; Removing the mask layer by a wet etching process, and leaving the support plate to protrude lower portions of the semiconductor structure formed in the mask layer opening; Forming an insulating layer between the bottoms of the plurality of protruding semiconductor structures and exposing the bottom surfaces of the plurality of semiconductor structures on a surface from which the support plate is separated; And forming a second electrode on the insulating layer and the lower surface of the exposed plurality of semiconductor structures. The method according to any one of claims 18 to 20, The support plate, A method for manufacturing a light emitting device having a light emitting layer having a three-dimensional structure, which is formed of any one of sapphire, silicon carbide (SiC), gallium arsenide (GaAs), and gallium nitride. The method according to any one of claims 18 to 20, The mask layer, It is an oxide film, The manufacturing method of the light emitting element provided with the light emitting layer of the three-dimensional structure. The method according to any one of claims 18 to 20, The semiconductor structures, A method of manufacturing a light emitting device having a light emitting layer having a three-dimensional structure, characterized by including a hexagonal pyramid shape or a hexagonal pyramid shape in which an upper portion is cut. The method according to any one of claims 18 to 20, The semiconductor structures, A method for manufacturing a light emitting device having a light emitting layer having a three-dimensional structure, which is arranged in a pattern of a dot shape or a stripe shape. The method according to any one of claims 18 to 20, The mask layer, The manufacturing method of the light emitting element provided with the light emitting layer of the three-dimensional structure provided with a point opening, or a point opening and an annular opening. The method according to any one of claims 18 to 20, Detaching the support plate, The support plate is a sapphire substrate, When the semiconductor layer is a semiconductor layer containing GaN, Method of manufacturing a light emitting device having a light emitting layer having a three-dimensional structure characterized in that the separation by performing a laser lift-off (Laser lift-off) process to irradiate a laser from the lower portion of the support plate.

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