KR100659085B1 - Target apparatus for sputtering, and sputtering apparatus therewith, sputtering method, manufacturing method of organic light emitting device, and manufacturing method of organic TFT thereby - Google Patents

Abstract

The present invention is to prevent damage to the film due to the collision of the substrate of the particles having a high energy generated when forming a thin film, the case having an opening on one side, and is accommodated in the case so that one surface is exposed through the opening A target including a sputtering target, a target body accommodated in the case and supporting the other surface of the sputtering target, a magnetic field generating block accommodated in the target body, and a cooling path interposed between the target body and the magnetic field generating block. And a pair of parts, wherein each of the target parts is arranged such that the openings of the respective cases face each other, so that the respective sputtering targets face each other, and each of the magnetic field generating blocks has different polarities. Sputtering target device and a sputtering device having the same, characterized in that disposed so as to A sputtering method using a terminating device, a method of manufacturing an organic thin film transistor, and a method of manufacturing an organic light emitting display device.

Description

Target apparatus for sputtering, and a sputtering apparatus having the same, a sputtering method using the sputtering apparatus, a method of manufacturing an organic thin film transistor, and a method of manufacturing an organic light emitting display device {Target apparatus for sputtering, and sputtering apparatus therewith, sputtering method, manufacturing method of organic light emitting device, and manufacturing method of organic TFT ever}

1 is a view showing a leakage current of an organic light emitting display device formed using a conventional sputtering device;

2 is a schematic view for explaining a counter-target sputtering apparatus according to an embodiment of the present invention,

3A is a cross-sectional view illustrating a target device for sputtering according to an embodiment of the present invention;

Figure 3b is a perspective view of the target device for sputtering of Figure 3a,

3C is a perspective view illustrating a state in which the first target part and the second target part are rotated by the operation of the rotating part of the target device for sputtering of FIG. 3A;

4 is a schematic view for explaining a counter-target sputtering apparatus according to another embodiment of the present invention.

5 is a cross-sectional view showing an example of an organic thin film transistor manufactured by the sputtering apparatus of the present invention;

6 is a cross-sectional view showing another example of an organic thin film transistor manufactured by a sputtering apparatus of the present invention;

7 is a cross-sectional view showing another example of an organic thin film transistor manufactured by a sputtering apparatus of the present invention;

8 is a cross-sectional view illustrating an example of an organic light emitting display device manufactured by a sputtering apparatus of the present invention;

FIG. 9 is a view for explaining a leakage current of an organic light emitting display device manufactured by using the opposite target type sputtering device of the present invention. FIG.

(Explanation of symbols for main parts of drawing)

100; Chamber 110; chamber

120; A substrate mount 130; Target part transfer device

140; Barrier plate

200, 400, 500; Target device for sputtering

200a; A first target portion 200b; Second target portion

210a, 210b; Sputtering targets 220a, 220b; case

230a, 230b; Target bodies 232a, 232b; Support Plate

240a, 240b; Magnetic field generation blocks 244a and 244b; Magnet

246a, 246b; Yoke 250a, 250b; Cooling furnace

260a, 260b; Gas supply means 272a, 272b; Horizontal moving parts

274a, 274b; Pivot 300; Power supply

The present invention relates to a sputtering target device, a sputtering device having the same, a sputtering method using the sputtering device, a method of manufacturing an organic thin film transistor, and a method of manufacturing an organic light emitting display device. The present invention relates to a target device for sputtering opposed to each other, and a sputtering device having the same, a sputtering method using the sputtering device, a method of manufacturing an organic thin film transistor, and a method of manufacturing an organic light emitting display device.

As a representative method for forming an inorganic film such as a metal film or a transparent conductive film, a sputtering method is known.

This sputtering method is a method typically used in the film forming process of a TFT LCD, a flat panel display such as an organic electroluminescent display, or various electronic device manufacturing processes, and is known as a dry process technology having a wide range of applications.

In the sputtering method, a rare gas such as Ar gas is introduced into a vacuum container, and cathode direct current (DC) power or high frequency (RF) power including a sputtering target is supplied at a high pressure of 150 V or higher to form a film through glow discharge. 방법) How to.

The applied voltage has a close relationship with the energy of the particles protruding from the target during plasma formation. The sputtering method increases the generation of particles having a high energy of 100 eV or more by supplying power to 150 V or more.

Particles having a high energy of 100 eV or more collide with the substrate and the temperature after the sputtering process may rise up to about 200 ° C., thereby causing a problem of damaging the substrate. In addition, the particles having a high energy of 100 eV or more may damage the thin film when other thin films are formed on the substrate.

In particular, when sputtering an inorganic film on an organic film, such as when forming an upper electrode of an organic light emitting display device or when forming an electrode of an organic thin film transistor, it has a high energy of 100 eV or more generated during the sputtering process. Particles collide with the organic layer and damage the organic layer. At this time, even when sputtering is performed after partially depositing the buffer layer on the organic film, damage may occur to the organic film in the case of a material having a thin thickness or a highly reactive buffer layer.

If the damaged organic layer is a light emitting layer of the organic light emitting display, a leakage current may increase greatly in a reverse bias region of the organic light emitting display. In severe cases, dark spots or bright spots may be formed in the visible pixel region, and in the case of forward bias, the threshold voltage may increase.

In addition, during the sputtering process, there is a problem in that the sputtering material may not be deposited on the substrate and fall down. As a result, when accumulated on the sputtering target, arc discharge occurs on the sputtering target, thereby causing a problem in that the sputtering target is damaged.

1 is a current-voltage curve measured by forming an ITO electrode on an organic layer of a top-emitting organic electroluminescent display using a conventional DC sputter. When the ITO electrode is formed by using a DC sputter, it can be seen that a high leakage current occurs in the reverse voltage region. As described above, the leakage current is generated by the collision of the high-energy particles generated in the plasma during the deposition process with the organic matter. If the organic matter becomes partially metallic due to the energy transmitted during the collision, this part This acts as a conducting path, resulting in leakage currents. In addition, the collision of particles raises the temperature of the organic film to cause an interfacial reaction at the interface. The conducting interfacial layer formed as a result of the interfacial reaction can also act as a conduction path. Since the leakage current affects the luminous efficiency, reliability, and lifespan of the organic light emitting display, it must be removed in order to manufacture a high efficiency organic electroluminescent display. In addition, high energy particle collision may cause a short circuit of the device.When high energy particles collide with a relatively weak organic material or transfer energy to an electrode, the particles penetrate the organic material and are connected to the anode, which is a lower electrode, to short circuit. It can also cause dark spots. In addition, the dark spots are a major cause of fine particles in the chamber directly contacting the organic layer.

The present invention is to solve the above problems of the prior art, a sputtering target device that can prevent the damage of the film due to the substrate collision of particles having a high energy generated when forming a thin film, a sputtering device having the same, the sputtering An object of the present invention is to provide a sputtering method using an apparatus, a method of manufacturing an organic thin film transistor, and a method of manufacturing an organic light emitting display device.

In order to achieve the above object, the present invention provides a case having an opening on one side, a sputtering target accommodated in the case so that one surface is exposed through the opening, and accommodated in the case, to support the other surface of the sputtering target And a pair of target portions including a target body, a magnetic field generating block accommodated in the target body, and a cooling path interposed between the target body and the magnetic field generating block, wherein each of the target portions has an opening of each case. It is arranged to face each other, so that the respective sputtering targets face each other, and each of the magnetic field generating block provides a target device for sputtering, characterized in that arranged to have a different polarity.

The present invention also provides a sputtering apparatus including at least one of the above-mentioned sputtering target apparatuses in a chamber, in order to achieve the above object.

In addition, the present invention is a sputtering method of placing a substrate in a chamber, at least one sputtering target device in a chamber corresponding to a lower portion of the substrate, and then depositing a predetermined film on the substrate while rotating the substrate. To provide.

The present invention provides a method for manufacturing an organic thin film transistor formed on a substrate, the organic thin film transistor comprising an organic semiconductor layer, a source / drain electrode in contact with the organic semiconductor layer, and a gate electrode insulated from the organic semiconductor layer. In the manufacture of at least one of the source / drain electrodes and the gate electrode, the substrate is disposed in a chamber, and at least one target device for sputtering is disposed in a chamber corresponding to a lower portion of the substrate, and then the substrate is rotated. It provides a method for manufacturing an organic thin film transistor, characterized in that by sputtering the electrode forming material on the substrate.

The present invention also provides a method of manufacturing an organic light emitting display device in which a first electrode, an organic light emitting film, and a second electrode are sequentially stacked on a substrate, wherein the manufacturing of the second electrode includes placing the substrate in a chamber. And disposing at least one target device for sputtering in a chamber corresponding to a lower portion of the substrate, and then sputtering a second electrode forming material on the organic light emitting film while rotating the substrate. A method of manufacturing a light emitting display device is provided.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2A is a schematic diagram for describing a sputtering apparatus according to an exemplary embodiment of the present invention, and FIGS. 3A to 3C are diagrams for describing a sputtering target apparatus mounted in FIG. 2.

2, a sputtering apparatus according to an embodiment of the present invention is a counter-target sputtering apparatus, which includes a chamber unit 100, a sputtering target apparatus 200 installed in the chamber unit 100, and a power source. And a supply device 300.

The chamber unit 100 may include a chamber 110 forming the body of the sputtering apparatus, a substrate mounting unit 120 on which the substrate S is mounted, and a target transfer apparatus for transferring the sputtering target apparatus 200 ( 130).

In this case, the chamber 110 may be a vacuum chamber, and the inside of the chamber 110 may maintain a vacuum between 0.1 mTorr and 100 mTorr.

The substrate mounting unit 120 may mount the substrate S, support the substrate S so as to face the sputtering target device 200, and rotate the substrate S at a predetermined speed.

The target transporting device 130 is a device for transporting the sputtering target device 200. The target transporting device 130 may induce uniform sputtering when sputtering on a large substrate by transporting the sputtering target device 200.

In addition, the chamber part 100 may further include an adhesion plate 140 along the inner wall of the chamber 110 to prevent the inside of the chamber 110 from being contaminated by the sputtering material during the sputtering process.

As shown in FIGS. 3A to 3C, the sputtering target apparatus 200 has a structure including a pair of first target portions 200a and second target portions 200b facing each other.

The pair of first target portion 200a and the second target portion 200b may include a case 220a and 220b, a sputtering target 210a and 210b, a target body 230a and 230b, and a magnetic field generating block 240a, respectively. 240b) and cooling furnaces 250a and 250b.

The cases 220a and 220b may be provided in a box shape in which sides facing each other are opened, and ground shields 222a and 222b are coupled to the opened side. The ground shields 222a and 222b are provided in a hollow ring shape, and the ends 224a and 224b extend toward the center. The ground shields 222a and 222b serve as grounds at the time of initial discharge, and the distance from the sputtering targets 210a and 210b should be about 1 to 5 mm and should be processed so that the surface is not sputtered.

The sputtering targets 210a and 210b and the target bodies 230a and 230b are accommodated in the cases 220a and 220b. The sputtering targets 210a and 210b are accommodated so that one surface is exposed through the opening. The bodies 230a and 230b support the other surfaces of the sputtering targets 210a and 210b. Support plates 232a and 232b may be further interposed between the target bodies 230a and 230b and the sputtering targets 210a and 210b, and the magnetic field generating blocks 240a and 240b may be disposed in the target bodies 230a and 230b. Are accepted. The cooling paths 250a and 250b are interposed between the target bodies 230a and 230b and the magnetic field generating blocks 240a and 240b.

The sputtering targets 210a and 210b are disposed to face each other at the first target portion 200a and the second target portion 200b. In addition, the sputtering targets 210a and 210b are made of a material to be formed on the substrate S, and the first target part 200a and The sputtering targets 210a and 210b of the second target unit 200b may be made of the same material or different materials.

For example, the sputtering targets 210a and 210b may be made of aluminum (Al), aluminum alloys (Al alloys), and equivalents thereof.

Alternatively, the sputtering targets 210a and 210b may be indium-tin oxide (ITO), indium-zinc oxide (IZO), indium oxide (IO), znO, tin-zinc oxide (tzO), AZO, GZO, or equivalents thereof. It may be made of.

In addition, the sputtering targets 210a and 210b may be made of different materials to form a thin film made of a compound composed of two or more materials on the substrate S. FIG. For example, one of the sputtering targets 210a and 210b may be made of ITO, and the other may be made of IZO to form a thin film made of ITZO on the substrate S. That is, by using different materials as the sputtering targets 210a and 210b, the materials formed on the substrate S can be controlled in various ways.

The target bodies 230a and 230b may be provided as an insulator, and may be formed in a box shape having one side opened.

The support plates 232a and 232b are parts for mounting the sputtering targets 210a and 210b to support the other surfaces of the sputtering targets 210a and 210b, and are coupled to the opened portions of the target bodies 230a and 230b. Can be.

The magnetic field generating blocks 240a and 240b are means for generating a magnetic field in a space between the sputtering targets 210a and 210b of the first target portion 200a and the second target portion 200b facing each other. The magnetic field generating blocks 240a and 240b of the first target portion 200a and the second target portion 200b are arranged with different polarities.

According to an exemplary embodiment of the present invention, the magnetic field generating blocks 240a and 240b may include block bodies 242a and 242b, magnets 244a and 244b, and yokes 246a and 246b.

The block bodies 240a and 240b are formed to plug at least one of the bar-shaped magnets 244a and 244b and may be formed of an insulator.

The magnets 244a and 244b may be formed longer than the length of the magnetic field generating means used in the conventional sputtering apparatus, and the length of the magnetic field generating means used in the conventional sputtering apparatus is generally 1.5 cm to 2 cm. However, the lengths of the magnets 244a and 244b of the present invention are preferably three to five times their length. That is, the length of the magnets (244a, 244b) is preferably 4.5cm or more, more preferably to have a length of 5 to 12cm. This is because the longer the length of the magnet 244a, 244b itself, the larger the space of the magnetic field formed by the magnetic field generating block, and thus, between the first target portion 200a and the second target portion 200b. This is because it is possible to reduce the flux component out of space. Preferably, the surfaces of the magnets 244a and 244b have a magnetic flux density of at least 5,000 Gauss or more.

The yokes 246a and 246b make the magnetic field generated by the magnetic field generating blocks 240a and 240b more uniform. For this purpose, the yokes 246a and 246b may be made of a material capable of being magnetized by the magnets 244a and 244b. That is, the yoke 246a, 246b is preferably made of a ferromagnetic or paramagnetic material, more preferably of ferromagnetic material. When the yokes 246a and 246b are made of ferromagnetic material, the yokes 246a and 246b may be made of any one of iron, cobalt, nickel, and alloys thereof. The yoke may use a Fe-based plate having a thickness of 2 to 10 mm, and the sizes of the first target portion 200a and the second target portion 200b may be 130 to 200% of the substrate size. have.

The cooling paths 250a and 250b cool the magnetic field generating blocks 240a and 240b of the first target part 200a and the second target part 200b through the flow of cooling water.

The cooling paths 250a and 250b may be formed as flow paths in a predetermined path in the target bodies 230a and 230b, and are disposed to flow along gaps between the magnetic field generating blocks 240a and 240b. In addition, the coolant flowing into the cooling paths 250a and 250b flows in and out along the inlet pipes 252a and 252b and the outlet pipes 254a and 254b formed in the cases 220a and 220b and the target bodies 230a and 230b. do.

 Meanwhile, a flow path 234a and 234b having a predetermined shape may also be formed on a surface of the support plates 232a and 232b facing the magnetic field generating blocks 240a and 240b, and the flow paths 234a and 234b may be formed. In communication with the cooling paths 250a and 250b, the cooling water may flow between the support plates 232a and 232b and the magnetic field generating blocks 240a and 240b.

Gas supply means 260a and 260b are provided above and / or below the cases 220a and 220b. The gas supply means 260a, 260b includes gas supply pipes 262a, 262b and gas injection nozzles 264a, 264b.

As shown in FIGS. 3B and 3C, the gas injection nozzles 264a and 264b are formed so that a plurality of holes are formed in a thin pipe extending in the width direction of the cases 220a and 220b so that the gas may be ejected. At this time, the diameter of the hole may be about 1 ~ 5mm, the spacing is 5 ~ 100mm can be adjusted according to the shape of the gas flow and plasma.

These gas supply means (260a, 260b) are installed in the upper and lower, so that the lower or upper gas supply means can be injected alone, or the upper and lower at the same time depending on the process, the entire chamber 110 Atmospheric pressure can be controlled.

The cases 220a and 220b may further include correction bars 266a and 266b between the gas injection nozzles 264a and 264b. The distribution of the thin film formed during the actual film formation may be formed in a mountain shape with a high target center. By the correction bars 266a and 266b, the film distribution of the central portion can be made more uniform.

The cases 220a and 220b of the first target part 200a and the second target part 200b are installed on the base plate 270 so as to be horizontally moved and rotated.

That is, the horizontal moving parts 272a and 272b are provided on the base plate 270 so as to be close to or separated from each other, and the first target is disposed on the horizontal moving parts 272a and 272b via the rotating parts 274a and 274b. Cases 200a and 220b of the unit 200a and the second target unit 200b are installed.

The horizontal moving parts 272a and 272b may use a rail shape or a bolt fixing method to maintain the interval of about 30 to 150 mm between the first target part 200a and the second target part 200b.

Rotating portions 274a and 274b may be hinge means, and thus, the first target portion 200a and the second target portion 200b may be sputtered targets around the horizontal moving portions 272a and 272b. As shown in FIG. 3C, the portions 210a and 210b face upward. Rotating portions 274a and 274b face sputtering targets 210a and 210b of the first target portion 200a and the second target portion 200b when the sputtering targets 210a and 210b are replaced. In this way, the sputtering targets 210a and 210b can be smoothly replaced.

In addition, although not shown in the drawings, the sputtering target device 200 is connected to an external suction pump to suck foreign substances and discharge them to the outside, further comprising a foreign material removal means located on the bottom surface of the base plate 270. Can be. The foreign matter removing means is to prevent foreign matters that may occur during the sputtering process through the sputtering apparatus of the present invention to accumulate on the bottom surface of the base plate 270 of the target device for sputtering, foreign matters during the sputtering process This is prevented from flowing onto the substrate S. In addition, the sputtering material is to prevent the sputtering material is not sputtered, stacked on the bottom surface to affect the sputtering target (210a, 210b).

In FIG. 2, the power supply device 300 supplies (−) power to the pair of opposing sputtering targets 210a and 210b such that the pair of opposing sputtering targets 210a and 210b operate as cathode electrodes. The chamber 110 serves to operate as an anode electrode.

Operation of the opposed target type sputtering apparatus according to the embodiment of the present invention as described above is as follows.

The substrate S is mounted on the substrate mounting part 120 of the chamber part 100, and sputtering gas such as argon (Ar) gas is supplied to the first target part 200a through gas supply means 260a and 260b. And a space between the second target portions 200b.

In this case, when the material formed on the substrate S is an oxygen-containing material, that is, an oxide, by the opposite target type sputtering apparatus according to an embodiment of the present invention, in addition to the argon (Ar) gas, oxygen O2 may be injected into the chamber 110. At this time, the pressure in the chamber 110, in particular, the pressure of the sputtering gas between the first target portion 200a and the second target portion 200b is preferably 0.1mTorr to 100mTorr. When the pressure of the sputtering gas is higher than 100 mTorr, the content of a sputtering gas such as argon (Ar) is increased in the thin film formed on the substrate S through the sputtering method, resulting in deterioration of characteristics of the thin film. Because. In addition, when the pressure of the sputtering gas is lower than 0.1mTorr, it is because the formation of plasma is difficult in the space between the first target portion 200a and the second target portion 200b, so the sputtering efficiency is lowered.

3A and 3B, the sputtering targets 211 and 215 of the first target portion 200a and the second target portion 200b face each other through the power supply device 300 at the same time. When (-) power is applied, sputtering plasma is generated in the space between the first target portion 200a and the second target portion 200b by the magnetic field generated by the magnetic field generating blocks 240a and 240b. Is constrained. At this time, the plasma is composed of gamma-electrons, anions, cations and the like.

At this time, the electrons in the plasma forms a high-density plasma while rotating along the lines of magnetic force between the sputtering targets 210a and 210b of the first target portion 200a and the second target portion 200b facing each other. The high density plasma is maintained while reciprocating by the negative power applied to the sputtering targets 210a and 210b. That is, all electrons or ions formed in the plasma or formed by the applied power are rotated along the magnetic field lines. Similarly, gamma-charged ion particles such as electrons, anions, and cations also reciprocate along the magnetic field lines. As a result, charged particles having a high energy of 100 eV or more are accelerated to the opposite target and constrained in the plasma formed in the space between the first target portion 200a and the second target portion 200b. At this time, among the particles sputtered by any one of the sputtering targets 210a and 210b, particles having a high energy of 100 eV or more are accelerated to the opposite target so that the first target portion 200a and the second target portion 200b There is no effect on the substrate (S) lying perpendicular to the plasma formed in the space between), and a thin film is formed on the substrate (S) by diffusion of neutral particles having a relatively low energy.

Therefore, compared with the case of using the conventional sputtering apparatus, damage by the plasma, that is, damage to the substrate S due to collision of particles having high energy, can be prevented, and a thin film can be formed on the substrate S. FIG.

In addition, since there is no collision of particles with high energy of 100 eV or more, in the conventional sputtering apparatus, the temperature after the sputtering process of the substrate S was about 200 ° C., but after the sputtering process using the sputtering apparatus according to the embodiment of the present invention The temperature of the substrate S may be less than that. According to the experiment, the temperature of the substrate S may be maintained at 40 ° C. or lower without installing a separate cooling system of the substrate S, thereby minimizing damage to the organic material and damage to the substrate S.

In addition, the substrate S is positioned above the inside of the chamber 110, and the sputtering targets 210a and 210b of the first target portion 200a and the second target portion 200b are substantially perpendicular to each other. Since the sputtering process at, the foreign matter and sputtering material generated in the conventional counter-targeting sputtering device is accumulated in the lower portion, it is possible to prevent the arc discharge generated in the lower sputtering target of the sputtering target (210a, 210b) Therefore, damage to the sputtering targets 210a and 210b due to arc discharge can be prevented. In addition, the foreign matter and the sputtering material may be removed through the foreign matter removal means provided on the inner bottom surface of the base plate 270.

In addition, since the cases 220a and 220b of the first target part 200a and the second target part 200b are connected to the horizontal moving parts 272a and 272b through the rotating parts 274a and 274b, the sputtering target When the service life of the 210a and 210b is replaced, the sputtering targets 210a and 210b may be directed upwards, so that the sputtering targets 210a and 210b may be replaced more smoothly. Therefore, the work time according to the replacement of the sputtering targets 210a and 210b can be further reduced.

On the other hand, the target device for sputtering as described above, as shown in Figure 4, may be provided with a plurality in one chamber 100. That is, by installing a plurality of target devices for sputtering (400, 500) in the one chamber unit 100, it is possible to sputter a larger substrate (S).

The sputtering apparatus according to the present invention can be used in various film forming processes, and in particular, it is applicable to the manufacturing method of the organic thin film transistor and the organic light emitting display device.

5 shows an example of an organic thin film transistor manufactured by the sputtering apparatus of the present invention.

The organic semiconductor layer 12 is formed on the substrate 11, the source / drain electrodes 13 are formed on the organic semiconductor layer 12, and then the gate insulating layer 14 is formed to cover them, and the gate The gate electrode 15 is formed on the insulating film 14.

In this case, the organic semiconductor layer 12 may include pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, and perylene. (perylene) and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylenetetracarboxylic dihydride Perylene tetracarboxylic dianhydride and derivatives thereof, oligoacenes and derivatives thereof of naphthalene, oligothiophenes and derivatives thereof of alpha-5-thiophene, phthalocyanine and derivatives thereof, with or without metal, Naphthalene tetracarboxylic diimide and derivatives thereof, naphthalene tetracarboxylic dianhydride and derivatives thereof, pyromellitic dianhi Dry and derivatives thereof, pyromellitic diamides and derivatives thereof, conjugated polymers and derivatives thereof including thiophene, polymers and derivatives thereof including fluorene, and the like can be used.

The source / drain electrodes 13 may be made of noble metals such as Au and Pt, and the source / drain electrodes 13 may be sputtered by using the above-described sputtering apparatus of the present invention.

According to the present invention, sputtering the source / drain electrodes 13 on the organic semiconductor layer 12 can minimize damage to the organic semiconductor layer 12.

Sputtering of the gate electrode 15 can also use the sputtering apparatus of this invention.

6 illustrates another example of an organic thin film transistor manufactured by a sputtering apparatus of the present invention, in which a gate electrode 15 is formed on a substrate 11 and a gate insulating layer 14 is formed to cover the gate electrode 15. After that, the organic semiconductor layer 12 is formed on the gate insulating film 14, and the source / drain electrodes 13 are formed on the organic semiconductor layer 12.

Also in this case, when the source / drain electrodes 13 are sputtered by using the sputtering apparatus according to the present invention, damage to the lower organic semiconductor layer 12 can be minimized. Of course, the gate electrode 15 can also be formed using the sputtering apparatus.

FIG. 7 illustrates another example of the organic thin film transistor manufactured by the sputtering apparatus of the present invention, and forms the source / drain electrode 13 on the substrate 11 and covers the organic semiconductor layer 12. ), The gate insulating film 14 is formed to cover the organic semiconductor layer 12, and the gate electrode 15 is formed thereon.

In this case, when the gate electrode 15 is sputtered into a film by using the sputtering apparatus which concerns on this invention, the damage to the lower organic semiconductor layer 12 can be minimized. Of course, the source / drain electrodes 13 can also be formed using the sputtering apparatus.

The sputtering apparatus of the present invention can be applied to a thin film transistor manufacturing process of various structures in addition to this.

8 illustrates an example of an organic light emitting display manufactured by the sputtering apparatus of the present invention.

As described above, after the planarization film 26 is formed on the substrate on which the TFT is formed, the first electrode 28 connected to the drain electrode of the TFT is formed on the planarization film 26. After the planarization layer 26 is formed to expose the first electrode 28, the organic emission layer 29 is formed on the exposed first electrode 28. The second electrode 30 is formed to cover the organic light emitting film 29.

In this case, the organic light emitting film may be a low molecular or polymer organic film. When the low molecular organic film is used, a hole injection layer (HIL), a hole transport layer (HTL), and an emission layer (EML) may be used. , Electron Transport Layer (ETL), Electron Injection Layer (EIL), etc. may be formed by stacking in a single or complex structure, and the usable organic materials may be copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), Tris Various applications include, for example, tris-8-hydroxyquinoline aluminum (Alq3). These low molecular weight organic films are formed by the vacuum deposition method. In the case of the polymer organic film, the structure may include a hole transporting layer (HTL) and a light emitting layer (EML). In this case, PEDOT is used as the hole transporting layer, and polyvinylvinylene (PPV) and polyfluorene are used as the light emitting layer. Polymer organic materials such as (Polyfluorene) are used and can be formed by screen printing or inkjet printing.

The second electrode 30 formed on the organic light emitting layer 29 is sputtered with a metal material having a low work function. At this time, the second electrode 30 may be formed using a sputtering apparatus according to the present invention. have.

Then, damage to the lower organic light emitting film 29 can be minimized.

Of course, this is not limited to the AM type organic electroluminescent display shown in FIG. 8, and is equally applicable to the manufacturing process of the PM type organic electroluminescent display.

9 is a diagram for describing a leakage current of an organic light emitting display device manufactured by using a sputtering apparatus of the present invention.

ITO is formed on the organic layer of the top emission type organic electroluminescent display having the same structure as that of FIG. 1 by using an opposing target sputtering device as shown in FIGS. 2 to 3C. 1,000 Å thick ITO was formed on the organic electroluminescent device consisting of anode) / HIL / HTL / EML / ETL / EIL.

When the film was formed, the base pressure was 10-7 Torr, the pressure inside the chamber 110 was 5 mTorr, and Ar and O2 were used in a ratio of 9: 1. The sputtering targets 210a and 210b used rectangular ITO, and were formed in a DC power supply region of 100 W to 5 kW.

As can be seen in FIGS. 1 and 9, it can be seen that the leakage current decreases in the reverse bias region and thus there is little compared with the organic electroluminescent display manufactured using the conventional DC sputter. This is because particles with high energy are confined in the magnetic field to minimize particle collisions in the direction of the substrate.

On the other hand, in the embodiment of the present invention, the substrate (S) is located in the upper portion of the chamber interior space, the target device for sputtering (200, 400, 500) is located at the lower side of the opposite target sputtering sputtering from the upper direction Although the apparatus has been described as an example, the substrate may be placed in a state substantially perpendicular to the ground, and the sputtering direction of the sputtering target apparatus may be sputtered in a state perpendicular to the substrate.

As described above, according to the present invention, the following effects can be obtained.

First, when the target device for sputtering and the sputtering device including the sputtering target device according to the present invention are introduced to the electrode deposition of the organic light emitting display device and the organic semiconductor, it is possible to minimize the plasma damage effect due to collision of particles having high energy. . In addition, a low temperature film formation process of 40 ° C. or lower is possible on the organic layer without introducing a cooling structure, which is suitable for manufacturing an organic light emitting display device and an organic semiconductor. It does not cause a change in the properties of the organic material itself and can form a movable film. As a result, large area film formation is also possible. A single or a plurality of target devices may be introduced, or a plurality of target devices may be arranged to continuously perform a target efficiency and a multi-step process. Initially, a low voltage may be applied so that only particles having extremely weak energy may be deposited on the organic layer, and then a high voltage may be applied to perform a high rate deposition process, and thin films of different materials may be continuously formed. In addition, it is possible to form a multi-layer through repeated movement by the inter-back method.

Second, when a high quality metal thin film and a transparent electrode are formed on an organic material by using the target device according to the present invention, an organic light emitting display device having excellent electrical and optical characteristics can be realized. In fabricating an organic light emitting display device, one of the main issues, which is one of the main issues, is to reduce the damage to the organic film, to realize low temperature film formation, and to block not only the electrode but also components that may cause deterioration of organic materials such as H 2 O and O 2. It can also play the role of a protective film. Accordingly, it is possible to accelerate the realization and mass production of the top-emitting organic electroluminescent display, the flexible display, and the organic TFT.

Third, low temperature film formation is possible when using the target device according to the present invention to produce a flexible display, and a roll-to-roll method may be applied to enable high-speed mass production. In manufacturing a flexible display, the most important consideration is applying a target device according to the present invention to form a low temperature film to form a low temperature TFT composition thin film and a low temperature cathode without a separate cooling structure, thereby facilitating the manufacture of a flexible display. In addition, when roll-to-roll is applied in vacuum, continuous film formation is possible, which makes it suitable for mass production.                     

Fourth, by forming a transparent protective film formed on the upper electrode of the organic light emitting display using the target device according to the present invention, it is possible to simplify the manufacturing process of the organic light emitting display. In the manufacture of an organic light emitting display device, it is important to introduce a transparent protective film having moisture permeability and excellent transmittance. A transparent protective film such as SiNx, SiO 2, SiON, TiO 2, and the like may be formed by using the target device according to the present invention so as to have insulation properties while performing low-temperature low damage film formation. In this case, unlike the method using a low-temperature CVD or plasma gun, which is currently proposed as a method of forming a transparent protective film, there is an advantage in that the same logistics method as the organic deposition process can be adopted.

Fifth, when the target device according to the present invention is moved up and down or left and right and the electrode is formed or a plurality of target devices are applied, a large area deposition process is also possible. Since the individual target devices can be fabricated in one piece, the film can be moved to form a large area organic light emitting display device and an electrode and a protective film of the OTFT substrate. In addition, even when a plurality of target devices are introduced, a large area low temperature low damage process can be applied.

Sixth, the source and drain of the OTFT can be applied to the formation process using the target device according to the present invention. In forming the OTFT, the introduction of a low temperature low damage method will be gradually required in the process of forming a thin film on the organic layer. Also, in order to form an OTFT in a large area, a method of introducing a target device according to the present invention may be requested. In addition, even when the organic light emitting display device is formed on the substrate to which the OTFT is applied, a method of introducing the target device according to the present invention may be necessary.

Seventh, when the organic light emitting display device is manufactured as the target device according to the present invention, the leakage current can be minimized to increase the lifetime. By minimizing leakage current in the reverse bias region, it can be used even if it is maintained for a long time and can improve luminous efficiency. It also has the advantage of keeping the initial discharge voltage stable. While the current density in the 2-4V region of FIG. 1 is unstable, in FIG. 5, the current density is stably proportional to the initial discharge voltage region of 2-4V. This is presumed to be stable discharge characteristics because the organic layer is not denatured due to the low temperature low damage method due to organic damage caused by the existing sputtering method.

While the foregoing has been described with reference to preferred embodiments of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (10)

A case having an opening on one side; Sputtering target received in the case so that one surface is exposed through the opening A target body accommodated in the case and supporting the other surface of the sputtering target; A magnetic field generating block accommodated in the target body; And And a pair of target portions including a cooling passage interposed between the target body and the magnetic field generating block, Each target unit, The openings of the respective cases are disposed to face each other, such that the respective sputtering targets face each other, Each of the magnetic field generating blocks is disposed such that portions facing each other have different polarities, Each target portion includes at least one gas supply means outside the case, and the gas supply means includes a gas supply pipe and a gas injection nozzle. The method of claim 1, A support plate for supporting the other surface of the sputtering target is interposed between the target body and the sputtering target of each target portion, Sputtering target device, characterized in that the flow path communicated with the cooling path between the support plate and the magnetic field generating block. The method of claim 1, The magnetic field generating blocks, the target device for sputtering, characterized in that the yoke is further provided at least in a portion facing each other. The method of claim 1, Each of the magnetic field generating blocks includes a block main body, at least one magnet accommodated in the block main body, and a yoke in close contact with at least one surface of the block main body. delete The method of claim 1, Each target unit, A horizontal moving part connected to the case to horizontally move the case; And Sputtering target device further comprises; a rotating unit for rotating the case is coupled to the horizontal moving unit and the outer side of the case. A sputtering device comprising at least one sputtering target device of any one of claims 1 to 4 and 6 in a chamber. Placing a substrate in a chamber, and placing at least one sputtering target device of any one of claims 1 to 4 and 6 in a chamber corresponding to a lower portion of the substrate, while rotating the substrate, A sputtering method for forming a predetermined film on a substrate. A method of manufacturing an organic thin film transistor formed on a substrate, the organic thin film transistor comprising an organic semiconductor layer, a source / drain electrode in contact with the organic semiconductor layer, and a gate electrode insulated from the organic semiconductor layer. Fabrication of at least one of the source / drain electrode and the gate electrode, After placing the substrate in the chamber, and at least one of the sputtering target device of any one of claims 1 to 4 and 6 in a chamber corresponding to the lower portion of the substrate, while rotating the substrate, And sputtering the electrode forming material on the substrate. A method of manufacturing an organic light emitting display device in which a first electrode, an organic light emitting film, and a second electrode are sequentially stacked on a substrate. Preparation of the second electrode, After placing the substrate in the chamber, and at least one of the sputtering target device of any one of claims 1 to 4 and 6 in a chamber corresponding to the lower portion of the substrate, while rotating the substrate, And sputtering a second electrode forming material on the organic light emitting layer.

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