KR100646555B1 - Exposure System of Semiconductor - Google Patents

Abstract

The semiconductor exposure system of the present invention is a semiconductor exposure system that irradiates light emitted from a light source onto a wafer using a reduction projection lens, wherein the light path between the light source and the wafer includes a condenser lens, two blinds, and at least one mirror. , A reticle and a reduced projection lens are arranged.

Exposure, blinds

Description

Semiconductor exposure system {Exposure System of Semiconductor}

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 schematically illustrates the configuration of a conventional semiconductor exposure system for forming a pattern by exposing a photosensitive material applied on a wafer.

FIG. 2 is a view for explaining an energy distribution in the case of irradiating light onto a wafer using the conventional semiconductor exposure system shown in FIG. 1. FIG.

3 is a view for explaining a semiconductor exposure system according to a preferred embodiment of the present invention.

(Explanation of symbols for main parts of drawing)

200; Light sources 201, 204, 205, 208; mirror

202; Shutter 203; filter

206; Condenser lenses 207 and 211; blind

209; Reticle 210; Reduction projection lens

W; wafer

The present invention relates to a semiconductor exposure system, and more particularly, to a semiconductor exposure system in which the uniformity of the lamp is improved by using two blinds.

As is well known, the semiconductor wafer fabrication process involves forming various kinds of films on the upper surface of each semiconductor wafer in a lot unit, and then repeatedly scraping off the features of the semiconductor wafer using a mask made previously. It means the whole process of constructing the same electronic circuit on each chip on a semiconductor wafer.

The photomasking process, which is one of the semiconductor wafer manufacturing processes described above, forms a circuit by lamination, and transfers the necessary pattern for each layer to the upper part of the wafer by layering.

The photomasking process is a process of exposing a photoresist to ultraviolet rays so that an image of a mask is transferred to a wafer on which a photosensitive material is applied after an alignment is completed, which is an exposure apparatus for forming a wafer pattern as shown in FIG. 1A. The circuit pattern drawn on the mask is transferred to the wafer surface by ultraviolet rays generated from the stepper, so that alignment and exposure are performed at the same time.

1 is a view schematically showing the configuration of a conventional semiconductor exposure system for forming a pattern by exposing a photosensitive material applied on a wafer.

Referring to FIG. 1, a conventional semiconductor exposure system includes a light collecting lens 101, a blind 102, and at least one mirror 103 on an optical path between a light source 100, a light source 100, and a reduction projection lens 110. The reticle 104 is disposed so that the illumination light emitted from the light source 100 passes through the condensing lens 101, the blind 102, at least one mirror 103, and the reticle 104. Irradiated onto the wafer W through the 105.

FIG. 2 is a view for explaining an energy distribution when irradiating light onto a wafer by using the conventional semiconductor exposure system shown in FIG. 1.

2, when irradiating light onto the wafer W using a conventional exposure system, it can be seen that the energy distribution of the central portion and the outer portion of the wafer W is different.

In more detail, in the case of irradiating light onto the wafer W using a conventional exposure system, the energy of light irradiated to the center of the wafer W is higher than the energy of light irradiated to the outer portion of the wafer W. .

Therefore, when irradiating light onto the wafer W using a conventional exposure system, there is a problem that the energy uniformity of the light irradiated onto the wafer W is partially different.

Due to such exposure failure, a pattern failure of the mask occurs, and thus, a failure of the pattern formed on the wafer W occurs.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems of the prior art, and an object of the present invention is to provide a semiconductor exposure system in which the uniformity of a lamp is improved by using two blinds.

The semiconductor exposure system of the present invention for achieving the above object is a semiconductor exposure system for irradiating light emitted from a light source onto a wafer by using a reduced projection lens, the optical path between the light source and the wafer is a condenser lens, Two blinds, at least one mirror, a reticle and a reduced projection lens are arranged.

The two blinds are preferably arranged before and after the reduction projection lens in the light path, respectively.

The reticle is preferably arranged before the first blind and before the reduction projection lens disposed in the optical path before the reduction projection lens.

It is preferable to further include a shutter that closes when light corresponding to the illuminance energy value required for mask pattern formation is incident on the wafer and blocks light from passing therethrough, and passes only a predetermined wavelength band among the wavelength bands of the light passing through the shutter. It is preferable to further provide the filter to make.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

Like reference numerals in the drawings denote like elements.

3 is a view for explaining a semiconductor exposure system according to a preferred embodiment of the present invention.

Referring to FIG. 3, a semiconductor exposure system according to a preferred embodiment of the present invention may include first to fourth mirrors 201, 204, 205, and 208 on a light source 200, a light source 200, and a wafer W optical path. The shutter 202, the filter 203, the condenser lens 206, the first blind 207, the second blind 211, and the reticle 209 are disposed, respectively.

In this case, the illumination light emitted from the light source 200 is the first mirror 201, the shutter (202), the filter 203, the second mirror 204, the third mirror 205, the condenser lens 206 ), A first blind 207, a fourth mirror, a reticle 209, a reduced projection lens 210 and a second blind 211 are irradiated onto the wafer W.

The semiconductor exposure system as described above operates as follows.

First, the light source 200 is an exposure light source for forming a mask pattern having a predetermined shape on the semiconductor wafer W, and it is preferable to use one that generates light having a large peak of spectral energy distribution. The light source 200 emits light toward the condenser lens 201.

The light source 200 is an exposure light source for forming a mask pattern on a wafer. For example, an ultra-high pressure mercury lamp using a power having a peak of spectral energy distribution, for example, about 2 kW, is used. The wavelength of light emitted when mercury is excited at a high energy level generates light having a wavelength of 150 nm to 405 nm, which is an ultraviolet region, to the first mirror 201.

The first mirror 201 reflects the light generated by the light source 200 to the shutter 202, and the shutter 202 forms a mask pattern on the wafer W among the light reflected by the first mirror 201. When light corresponding to the illuminance energy value required is incident, it closes to block the light from passing through.

The filter 203 allows only a certain wavelength band, for example, 365 nm wavelength band, of the wavelength band of the light passing through the shutter 202 to pass through the second mirror 204, and the second mirror 204 filters the filter 103. The light passing through) is reflected to the third mirror 205, and the third mirror 205 reflects the light reflected by the second mirror 204 to the condenser lens 206.

The condenser lens 206 focuses light reflected by the third mirror 205, and the first blind 207 is light of an edge portion having a large energy difference from a center portion of the light passing through the condenser lens 206. It does not pass through to improve the uniformity of energy distribution of light.

As the fourth mirror 208 reflects the light passing through the first blind 207 to the reticle 209 in which a pattern for transferring to the photosensitive film is formed, the circuit pattern on the reticle 209 is projected as the reduced projection. The energy is reduced by the lens 210 at a predetermined magnification, and the energy uniformity of the light that passes through the reduced projection lens 205 is irradiated onto the wafer W through the second blind 206.

As described above, the semiconductor exposure system according to the exemplary embodiment of the present invention includes two blinds 207 and 211, and the two blinds 207 and 211 are formed on the optical path of the reduction projection lens 210. By arrange | positioning before and after, the uniformity of the light irradiated on the wafer W can be improved.

As described above, according to the present invention, the present invention can provide a semiconductor exposure system in which the uniformity of the lamp is improved by using two blinds.

While the foregoing has been described with reference to preferred embodiments of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (5)

delete A semiconductor exposure system for irradiating light emitted from a light source onto a wafer using a reduced projection lens, And a condenser lens, a reticle, and a reduction projection lens are disposed in the optical path between the light source and the wafer, and one blind is disposed before and after the reduction projection lens on the optical path. The method of claim 2, And the reticle is disposed before the blind projection lens and before the reduction projection lens in the optical path. The method of claim 2, And a shutter which closes when the light corresponding to the illuminance energy value required for mask pattern formation is incident on the wafer and blocks the light from passing through. The method of claim 4, wherein And a filter for passing only a predetermined wavelength band among the wavelength bands of light passing through the shutter.

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