KR100625591B1 - The organic electro-luminescence device and method for fabricating of the same - Google Patents

Abstract

The present invention relates to an organic light emitting device, and relates to a configuration of a dual plate structure organic light emitting device having a moisture absorbing layer formed through ultraviolet curing therein and a method of manufacturing the same.

In particular, the organic light emitting device according to the present invention is characterized in that the light emitting unit and the thin film transistor array unit is configured on a separate substrate, and the moisture absorption layer is configured on the thin film transistor array unit.

When the moisture absorbing layer is configured inside the device, the life of the device can be extended by removing moisture, and at the same time, the reliability of the device can be improved.

In addition, since the organic light emitting device according to the present invention is configured separately from the array portion and the light emitting portion, it is possible to be driven by a top emission method, it is possible to implement a high opening ratio and high brightness and good in terms of production management There is an advantage.

Description

The organic electroluminescent device and method for manufacturing the same {The organic electro-luminescence device and method for fabricating of the same}             

1 is a cross-sectional view schematically showing an organic light emitting device,

2 is an equivalent circuit diagram showing one pixel of a conventional organic light emitting diode,

3 is a cross-sectional view schematically showing the configuration of a dual plate structure organic light emitting device according to the present invention;

4 is a cross-sectional view showing a cross-sectional configuration of a switching region.

5 is a cross-sectional view illustrating a driving area and a pixel area;

6A through 6E are cross-sectional views illustrating a manufacturing process of a thin film transistor array unit of an organic light emitting diode according to an exemplary embodiment of the present invention.

7A to 7C are cross-sectional views illustrating a manufacturing process of a light emitting part of an organic light emitting diode according to the present invention in a process sequence.

<Brief description of the main parts of the drawing>

99 organic light emitting device 100 first substrate

130 connection electrode 146 moisture absorption layer

200: second substrate 202: first electrode (anode electrode)

204: blocking layer 206: partition wall

208 Light emitting layer 210 Second electrode (cathode electrode)

300: sealant

The present invention relates to an organic light emitting device, and in particular, in a dual plate organic light emitting device having a thin film transistor array unit and an organic light emitting unit formed on a separate substrate, moisture absorption cured by ultraviolet rays inside the organic light emitting device. The present invention relates to a structure of a layered organic electroluminescent device and a method of manufacturing the same.

In general, the organic light emitting device injects electrons and holes into the light emitting layer from the cathode electrode and the anode electrode, respectively, to inject the injected electrons and holes ( It is a device that emits light when exciton 1 bonded by holes falls from the excited state to the ground state.

Due to this principle, unlike the conventional thin film liquid crystal display device, since a separate light source is not required, there is an advantage in that the volume and weight of the device can be reduced.

In addition, the organic EL device exhibits high quality panel characteristics (low power, high brightness, high reaction rate, low weight). Due to these characteristics, OLED is considered to be a powerful next generation display that can be used in most consumer electronic applications such as mobile communication terminal, CNS (Car Navigation System), PDA, Camcorder, Palm PC.

In addition, since the manufacturing process is simple, there is an advantage that can reduce the production cost much more than conventional LCD.

The method of driving the organic light emitting diode can be classified into a passive matrix type and an active matrix type.

The passive matrix type organic light emitting device has a simple structure and a simple manufacturing method. However, the passive matrix type organic light emitting device has a high power consumption and a large area of the display device, and the opening ratio decreases as the number of wires increases.

On the other hand, an active matrix organic light emitting diode has an advantage of providing high luminous efficiency and high image quality.

1 is a view schematically showing the configuration of an active matrix organic light emitting display device.

As shown, the organic light emitting diode 10 is a thin film transistor (T) array portion 14 on the transparent and flexible first substrate 12, and on the thin film transistor array portion 14 The first electrode 16, the organic emission layer 18, and the second electrode 20 are formed on the entire surface of the substrate above the organic emission layer.

In this case, the light emitting layer 18 expresses the colors of red (R), green (G), and blue (B). In a general method, a separate light emitting red, green, and blue light is generated for each pixel (P). Organic materials are patterned and used.

The organic light emitting diode 10 is completed by bonding the first substrate 12 to the second substrate 28 having the moisture absorbent 22 and the sealant 26.

At this time, the moisture absorbent 22 is for removing moisture that can penetrate into the capsule, and a portion of the substrate 28 is etched and the powder absorbent 22 is placed on the etched portion and the tape 25 is attached. Thus, the moisture absorbent 22 is fixed.

In the configuration as described above, the transparent anode electrode 16 is formed in the array portion to operate in the bottom emission type.

A configuration of one pixel of the organic light emitting diode as described above will be described in detail with reference to the equivalent circuit diagram of FIG. 2.

2 is an equivalent circuit diagram of one pixel of a conventional organic light emitting diode.

As shown in the drawing, the data line 49 intersects the gate line 36 perpendicularly to the gate line 36 in one direction of the substrate 30.

The switching element T _S is formed at the intersection of the data line 49 and the gate line 36, and the driving element T _D is electrically connected to the switching element T _S.

In this case, since the driving element T _D is a p-type thin film transistor, a storage capacitor C _ST is formed between the source electrode 52 and the gate electrode 34 of the thin film transistor, and the driving element T _D The drain electrode 54 is formed in contact with the anode electrode (16 in FIG. 1) of the organic light emitting layer E. In FIG.

In the above-described configuration, the storage capacitor C _ST is configured between the gate electrode 34 and the source electrode 52 of the driving element T _D.

The source electrode 52 and the power line 62 of the driving element T _D are connected to each other.

The operation characteristics of the organic light emitting device configured as described above will be briefly described below.

First, the switching element when the gate electrode 32 of the (T _S) is the gate signal is a current signal flowing through the data line 49 is the switching element changes the drive element into a voltage signal via (T _S) (T _D Is applied to the gate electrode 34.

In this way, the driving element T _D is operated to determine the level of the current flowing through the light emitting unit E, thereby enabling the organic light emitting layer to realize gray scale.

In this case, since the signal stored in the storage capacitor C _ST serves to maintain the signal of the gate electrode 34, the light emission is performed until the next signal is applied even when the switching element T _S is turned off. The level of the current flowing through the section E can be kept constant.

The switching element T _S and the driving element T _D may be composed of an amorphous thin film transistor or a polycrystalline thin film transistor, and the amorphous thin film transistor has an advantage of being able to be manufactured in a simpler process than a polycrystalline thin film transistor.

However, in the above-described conventional organic light emitting device, when the thin film transistor array unit and the light emitting unit are formed on a single substrate, the product of the yield of the thin film transistor and the organic light emitting layer yields the yield of the panel on which the thin film transistor and the organic light emitting layer are formed. do.

Therefore, the lower plate configured as in the conventional case has a problem that the yield of the panel is greatly limited by the yield of the organic light emitting layer.

In particular, even if the thin film transistor is formed well, the panel is judged to be a grade of failure if defects are caused by foreign substances or other factors in forming the organic light emitting layer using the thin film of about 1000 mW.

This leads to a loss of overall costs and raw material costs that were required to manufacture the thin film transistor of good quality, there was a problem that the yield is reduced.

In addition, as described above, the bottom emission method has a high degree of freedom and stability due to encapsulation, and has a problem in that it is difficult to apply to a high resolution product due to the limitation of the aperture ratio.

Although not described above, the conventional top emission method is advantageous in terms of product life because light is emitted upward, so the direction of light propagation is independent of the bottom thin film transistor array unit, and the thin film transistor can be easily designed and the aperture ratio can be improved. In the conventional top emission type structure, since the material selection range is narrow as the cathode is generally positioned on the organic light emitting layer, the transmittance is limited and the light efficiency is reduced, and a thin film type protective film must be configured to minimize the decrease in the light transmittance. If you do not have enough problems blocking the outside air.

The present invention has been proposed for the purpose of solving the above-described problem, and forms the organic EL device according to the present invention in a dual plate structure of the top emission type.

In particular, the moisture absorbing layer is configured as a means for absorbing moisture in the organic light emitting unit and the thin film transistor array unit.

In the organic light emitting device having a dual plate structure according to the present invention, since the transparent anode electrode (anode) layer can be located on the substrate, unlike the conventional structure, it is possible to operate in a top emission method (open emission) Since the area can be further secured, there is an advantage of realizing high brightness.

In addition, when designing the lower array part, there is no need to consider the opening area, so the design freedom is very high, and since the array part and the light emitting part are manufactured separately, only the defective substrate can be replaced even if a defect occurs, thereby improving production yield. There are advantages to it.

Furthermore, by further configuring the moisture absorbing layer cured using ultraviolet rays in the thin film transistor array unit, the lifespan of the organic light emitting unit can be extended, and in the structure in which the moisture absorbing layer is further configured, there is no need for an additional process to simplify the process. There is this.

According to an aspect of the present invention, there is provided an organic light emitting display device including: a first substrate and a second substrate configured to be spaced apart from each other and to define a plurality of pixel regions;

A gate line and a data line formed on the first substrate corresponding to one side of the pixel area and the other side perpendicular thereto; A switching element located at an intersection point of the gate line and the data line, the switching element comprising a gate electrode, an active layer, a source electrode and a drain electrode, and a driving element connected thereto; A connection electrode connected to the drain electrode of the driving device; A moisture absorption layer formed on the entire surface of the first substrate on which the connection electrode is formed, and a portion corresponding to the connection electrode is removed; A first electrode formed on one surface of the second substrate; A light emitting layer formed on the first electrode; The light emitting layer may include a second electrode configured to be independent of each pixel area and connected to the connection electrode.

The first electrode is an anode electrode, the second electrode is a cathode electrode, and the moisture absorbing layer is cured through ultraviolet rays irradiated from the back side of the substrate.

The drain electrode of the switching element and the gate electrode of the driving element are in contact with each other, and the height of the connection electrode is 2 μm to 3 μm.

The organic light emitting device manufacturing method according to the present invention comprises the steps of defining a plurality of pixel areas on the first substrate and the second substrate; Forming a gate line and a data line on the first substrate corresponding to one side of the pixel area and the other side perpendicular to the pixel area; Forming a switching element and a driving element which are located at the intersection of the gate line and the data line, each comprising a gate electrode, an active layer, a source electrode and a drain electrode; Forming a connection electrode connected to the drain electrode of the driving device; Forming a moisture absorbing layer by applying a photocurable moisture absorbing material to the entire surface of the substrate on which the connection electrode is formed; Irradiating ultraviolet rays to the rear surface of the substrate on which the moisture absorption layer is formed; Removing the moisture absorbing layer of the UV-blocked portion corresponding to the connection electrode; Forming a first electrode on one surface of the second substrate; Forming a light emitting layer on the first electrode; And forming a second electrode on the light emitting layer independently of each pixel area and electrically connected to the driving device.

The moisture absorbing layer is characterized in that the mixture comprising a polymer containing an aluminum composite material having a property of absorbing moisture and a photocurable material.

The moisture absorbing layer that is not cured by the light is removed by using a fast rotating spinner.

The first electrode is an anode electrode, the second electrode is a cathode electrode, and the anode electrode is selected from the group of conductive materials having a high work function including indium tin oxide (ITO). The cathode electrode is formed of one selected from the group of conductive metals having a small work function including a double metal of aluminum (Al), calcium (Ca), magnesium (Mg), and lithium fluorine / aluminum (LIF / Al). do.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

Example

The organic light emitting device according to the present invention is a top emission dual plate structure, and further comprises a moisture absorption layer for absorbing moisture in the thin film transistor array unit configured on a separate substrate.

3 is an enlarged cross-sectional view showing the configuration of a dual plate structure organic light emitting device according to the present invention.

As shown, the organic light emitting device 99 of the dual plate structure according to the present invention includes an array substrate AS having a thin film transistor T and an array portion, and a light emitting substrate ES having an organic light emitting portion.

The array substrate AS and the light emitting substrate ES are bonded to each other using the sealant 300.

Although the array substrate AS and the light emitting substrate ES are defined and illustrated as a plurality of pixel regions P, the switching element (not shown) and the like are disposed on the first substrate 100 that is transparent to the array substrate AS. The drive element T _D is connected.

The switching element (not shown) and the driving element T _D are formed at every pixel region P. FIG.

In the above-described configuration, the connection electrode 130 is configured to be in contact with the drain electrode of the driving device T _D , and a moisture absorption layer 146 is formed in an area except the connection electrode 130.

The light emitting substrate ES forms an anode electrode 202 as a first electrode on a transparent second substrate 200, and an organic light emitting layer 208 under the first electrode 202. A cathode electrode 210, which is a second electrode, is formed under the organic emission layer 208.

A partition 206 is formed corresponding to the boundary of the pixel region P, and a blocking layer 204 is formed under the partition 206.

The cathode electrode 210 may be independently patterned for each pixel region P by the partition wall 206.

In the above-described configuration of the array substrate AS and the light emitting substrate ES, the connection electrode 130 is connected to the second electrode 210 of the light emitting part and the drain electrode (not shown) of the driving device T _D. Function to connect.

In this case, as shown in the drawing, the connection electrode T _D is configured to have a predetermined height in consideration of the gap between the two substrates AS and ES.

In the above-described configuration, by further configuring the moisture absorbing layer there is an advantage that can extend the life of the organic light emitting device due to the effect of removing moisture in the organic device.

Hereinafter, a configuration of a switching element, a driving element, and a pixel part included in a single pixel of the organic light emitting diode according to the present invention will be described in detail with reference to FIGS. 4 and 5.

4 and 5 are enlarged cross-sectional views showing a cross-sectional structure of one pixel of the thin film transistor array substrate according to the present invention bonded to the organic light emitting substrate described above.

As illustrated, the pixel region P is defined, and the switching region S and the driving region D are defined on one side of the pixel region P. As shown in FIG.

The gate electrodes 102 and 104, the active layers 110 and 114, the ohmic contact layers 112 and 116, the source electrodes 118 and 122 and the drain electrodes 120 and 124 which are spaced apart from each other are sequentially disposed in the switching region S and the driving region D, respectively. The stacked switching element T _S and the driving element T _D are configured.

In addition, as illustrated, the source electrode 120 of the driving element T _D is configured to be connected to the power line 126 configured with the first passivation layer 124 therebetween.

A second passivation layer 128 is formed on the entire surface of the substrate 100 including the power line 126 and exposes a part of the drain electrode 122 of the driving device T _D.

A connection electrode 130 is formed on the exposed drain electrode 122 to contact the second electrode 122, which is a means for contacting the second electrode 222 formed on the organic light emitting substrate. Indirectly connecting the drain electrode 124 serves to transfer a signal.

In this case, in consideration of the gap between the organic light emitting substrate ES and the array substrate AS, it is necessary to increase the connection electrode 130. For this purpose, an organic layer pattern having a predetermined height under the connection electrode 130 is required. 140 may be further configured.

In the pixel region 9, a moisture absorbing layer 146 is formed to correspond to a region other than the connection electrode 130.

The moisture absorbing layer 146 proceeds through a curing process by light or heat and a process of removing uncured portions. In particular, when the curing process using ultraviolet rays is performed, a separate mask process is not required. There is an advantage to simplify.

Hereinafter, a manufacturing process of a thin film transistor array unit of an organic light emitting diode according to the present invention will be described with reference to the drawings.

6A through 6D are cross-sectional views illustrating a manufacturing process of a thin film transistor array unit of an organic light emitting diode according to an exemplary embodiment of the present invention.

(Switching area is omitted, but will be described with reference to the switching area of FIG. 5).

As shown in FIG. 6A, the substrate 100 is defined as a plurality of pixel regions P, and the switching region (S in FIG. 4) and the driving region D are defined in each pixel region P again.

As described above, the conductive metal is deposited and patterned on the entire surface of the substrate 100 in which a plurality of regions (S, D, and P of FIG. 4) are defined, so that the switching region D and the driving region (S of FIG. 4) are formed. Gate electrodes 102 and 104 of FIG. 4 are formed on the substrates.

Inorganic insulation including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ) on the front surface of the substrate 100 on which the gate electrodes 1,104 of FIG. One or more materials selected from the group of materials are deposited to form the gate insulating layer 106.

Next, a pure amorphous silicon layer (a-Si: H) and an amorphous silicon layer (n + or p + a-Si: H) containing impurities are formed on the gate insulating layer 106 corresponding to the gate electrodes 102 and 104. After stacking and patterning, active layers 108 and 112 and ohmic contact layers 110 and 114 are formed in the switching region (S of FIG. 4) and the driving region D. FIG.

Next, although not shown, a process of exposing a portion near the switching region (S in FIG. 4) of the gate electrode 104 of the driving region D is performed.

Next, a conductive metal is deposited and patterned on the entire surface of the substrate 100 on which the active layers 108 and 112 of FIG. 4 and the ohmic contact layers 110 and 114 of FIG. 4 are formed, thereby switching regions (S of FIG. 4) and driving regions. Source electrodes 116 and 120 of FIG. 4 and drain electrodes 118 and 122 of FIG. 4, respectively, are formed in (D).

As shown in FIG. 6B, the above-described insulating material is deposited on the entire surface of the substrate 100 on which the source and drain electrodes (116, 120 of FIG. 4 and 118, 122 of FIG. 4) are formed to form a first passivation layer 124. By patterning, as shown in FIG. 5, the process of exposing the source electrode 120 of the drive area D is performed.

(Because FIG. 6B omits the process of exposing the source electrode to simplify the drawing, see FIG. 5.)

Next, a power line (126 in FIG. 5) connected to the source electrode (120 in FIG. 5) of the exposed driving region D is formed.

Next, one or more materials selected from the above-mentioned inorganic insulating material group are deposited on the entire surface of the substrate 100 on which the power supply wiring 126 of FIG. 5 is formed, or benzocyclobutene (BCB) and an acrylic resin. The second passivation layer 128 is formed by applying a material selected from the group of organic insulating materials including a resin.

Next, the second passivation layer 128 and the first passivation layer 124 below are etched to expose the drain electrode 122 (see FIG. 5) of the driving region D.

Next, a conductive metal is deposited and patterned on the entire surface of the substrate 100 on which the second passivation layer 128 is formed, thereby forming a connection electrode 130 connected to the drain electrode 122.

In this case, as described with reference to FIG. 5, the organic layer 140 may be further configured under the connection electrode 130.

As illustrated in FIG. 6C, a moisture absorbing material is coated on the entire surface of the substrate 100 on which the connection electrode 130 is formed to form a moisture absorbing layer 142.

The moisture absorbing layer 142 generally uses a mixture of an aluminum composite material having a property of absorbing moisture and a polymer including an ultraviolet curable material.

At this time, the surface of the second protective film 128 is plasma treated or the surface is treated with ultraviolet (ultra violet) or ozone (0 ₃ ) before applying the moisture absorbing layer.

In this case, when the moisture absorbing layer is dropped onto the substrate, the spreading property may be improved, and thus, a constant thickness may be obtained during spin coating.

The process of forming the moisture absorbing layer on the substrate may use a method such as spin coating, ink jet, nozzle, roll printing, and the like.

In this case, the moisture absorbing layer uses a mixture including an aluminum composite material having a property of absorbing moisture and a polymer having a photocurable material.

Subsequently, ultraviolet rays are irradiated from the lower part of the substrate 100 to cure the moisture absorbing layer 100.

At this time, the region where the connection electrode 130 is formed is composed of an opaque metal material, so that the moisture absorption layer 142 corresponding to this portion is blocked by light (ultraviolet rays) and is not cured.

When the intensity of the ultraviolet rays is increased, the moisture absorbing layer formed on the switching element and the driving element (not shown, T _D ) is cured, but since the connection electrode 130 usually has a height of 2 μm to 3 μm, the connection electrode ( The moisture absorbing layer 142 corresponding to 130 is left uncured.

As shown in FIG. 6D, after the curing process is performed, a spinline method of removing the uncured portion by turning a spinner is used. As shown in FIG. 6D, the front surface of the substrate 100 may be The moisture absorbing layer 146 is formed only in the region except the connection electrode 130.

Next, a process of curing the remaining moisture absorbing layer using heat is performed to stably fix it to the substrate.

In this case, the moisture absorbing layer may proceed with a curing process using heat, and in this case, a process of exposing the connection electrode must be performed through a separate process.

The method of removing the moisture-absorbing layer of the uncured portion may use plasma or solvent in addition to the high speed spin dry method mentioned above.

Through the process as described above it can be produced an array substrate for an organic light emitting device according to the present invention.

Hereinafter, a process of forming a light emitting part bonded to the array substrate will be described with reference to the drawings.

7A to 7C are cross-sectional views illustrating a method of manufacturing a light emitting unit (light emitting substrate) of an organic light emitting diode according to the present invention, in accordance with a process sequence.

As shown in FIG. 7A, a plurality of pixel areas P is defined on the transparent insulating substrate 200.

A first electrode 202 (anode electrode) is formed on the entire surface of the substrate 200 in which the pixel region P is defined. The first electrode 202 is a hole injection electrode for injecting holes into an organic light emitting layer (not shown), and is formed by depositing indium-tin-oxide (ITO), which is mainly transparent and has a high work function. .

Next, a selected one of the above-mentioned inorganic insulating material groups of the first electrode 202 is deposited and patterned to form a blocking layer 204 corresponding to the boundary of the pixel region. The blocking layer 204 is for preventing a vertical shot between the first electrode 202 and the second electrode formed thereafter.

As shown in FIG. 7B, a thick photosensitive organic film is applied to the entire surface of the substrate 200 on which the blocking layer 204 is formed, and then patterned to form a barrier layer 204 corresponding to the boundary of the pixel region P. FIG. The partition wall 206 is formed in the upper part.

As shown in FIG. 7C, an organic emission layer 208 emitting red (R), green (G), and blue (B) light is formed on the first electrode of the pixel zero surrounded by the partition 206. Form.

In this case, the organic light emitting layer 208 may be configured as a single layer or a multilayer. When the organic light emitting layer is formed as a multilayer, a hole transporting layer 208b and an electron transporting layer are formed in the light emitting layer 208a. Layer: ETL (208c) is further configured.

Next, a lead metal having a low work function is deposited on the entire surface of the substrate 200 on which the emission layer 208 is formed, thereby independently depositing the second electrode 210 deposited in each pixel region P. FIG. Form.

The second electrode 210 is a cathode electrode and has a small work function conductive metal group including a double metal of aluminum (Al), calcium (Ca), magnesium (Mg), and lithium fluorine / aluminum (LIF / Al). Method for manufacturing an organic light emitting device formed of one selected from.

Through the process as described above it is possible to form an organic light emitting substrate having a dual plate structure according to the present invention.

The organic electroluminescent device of the dual plate structure according to the present invention has an advantage of extending the life of the device through the removal of moisture by including a moisture absorption layer.

In forming the moisture absorption layer, there is an effect of simplifying the process because it does not require an additional mask process.                     

In addition, since the organic light emitting device is formed in a dual plate structure, unlike the conventional structure, a transparent anode electrode layer may be positioned on the upper portion of the substrate, so that the operation may be performed in a top emission method. Since the opening area can be further secured, high brightness can be realized.

In addition, when designing the lower array part, there is no need to consider the opening area, so the design freedom is very high, and since the array part and the light emitting part are manufactured separately, only the defective part needs to be replaced even if a defect occurs, thereby improving production yield. It can be effective.

Claims (22)

delete delete delete delete delete delete delete delete delete Defining a plurality of pixel regions in the first substrate and the second substrate; Forming a gate line and a data line on the first substrate corresponding to one side of the pixel area and the other side perpendicular to the pixel area; Forming a switching element and a driving element at an intersection point of the gate line and the data line; Forming a connection electrode electrically connecting the first substrate and the second substrate; Forming a moisture absorbing layer on the entire surface of the first substrate; Irradiating ultraviolet rays to the rear surface of the first substrate on which the moisture absorption layer is formed; Removing the moisture absorbing layer of the UV-blocked portion corresponding to the connection electrode; Forming a light emitting part on one surface of the second substrate; Organic electroluminescent device manufacturing method comprising a. The method of claim 10, The switching device and the driving device are each an organic light emitting device manufacturing method comprising a gate electrode, an active layer, a source electrode and a drain electrode. The method of claim 11, And a drain electrode of the switching device is connected to the gate electrode of the driving device. The method of claim 10, The light emitting unit includes a first electrode formed on the front surface of the second substrate, a light emitting layer formed on the first electrode, and a second electrode formed on the light emitting layer independently of the pixel region. Device manufacturing method. The method according to any one of claims 10 to 13, And the connection electrode is connected to the drain electrode of the driving device and the second electrode of the light emitting part. The method of claim 13, The first electrode is an anode electrode, the second electrode is a cathode electrode manufacturing method of an organic light emitting device. The method of claim 15, The anode electrode is formed of one selected from a group of conductive materials having a large work function including indium tin oxide (ITO), and the cathode electrode is made of aluminum (Al), calcium (Ca), magnesium (Mg), and lithium fluorine. A method for manufacturing an organic light emitting device, wherein the work function including a double metal of alumina (LIF / Al) is selected from one of a small group of conductive metals. The method of claim 10, The moisture absorption layer is an organic electroluminescent device manufacturing method of a mixture comprising an aluminum composite material having a property of absorbing moisture and a polymer comprising a photocurable material. The method of claim 10, The moisture absorbing layer which is not cured by ultraviolet rays is removed using a fast rotating spinner. The method of claim 10, The moisture absorbing layer that is not cured by the ultraviolet light may be removed by thermal, plasma, or solvent. The method of claim 10, The method of manufacturing an organic light emitting diode further comprises a surface treatment step for improving the spreadability of the moisture absorption layer by surface treatment of the substrate before forming the moisture absorption layer. The method of claim 20, The surface treatment method is one of the surface treatment method using a plasma (UV) or ultraviolet or ozone. The method of claim 10, After removing the moisture-absorbing layer that is not cured by the ultraviolet rays, further comprising the step of curing the remaining moisture-absorbing layer using heat.

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