KR100615290B1 - Flat panel display - Google Patents

Abstract

The present invention can lower the amount of current transmitted from the pixel portion TFT to the light emitting element, maintain the high characteristics of the circuit portion TFT, satisfy the luminance uniformity by the pixel portion TFT, and do not shorten the lifespan of the light emitting element. A pixel region including at least one pixel portion thin film transistor having a light emitting device and a semiconductor active layer electrically connected to the light emitting device, the semiconductor active layer having at least one nanoparticle and having a channel formed therein. And a circuit region for controlling a signal applied to the pixel region, the circuit region including at least one circuit portion thin film transistor having at least one nanoparticle and having a semiconductor active layer in which a channel is formed. Channel and pixel of the thin film transistor Relates to a flat panel display device, it characterized in that each equipped so as to have a different direction.

Description

Flat Panel Display {Flat panel display}

1 is a plan view schematically illustrating a structure of a thin film transistor active layer of an active matrix organic light emitting display device according to an exemplary embodiment of the present invention;

FIG. 2 is a cross-sectional view illustrating an exemplary embodiment of any one of the subpixels of the pixel area of FIG. 1;

3 is a cross-sectional view showing an embodiment of a circuit unit TFT in the circuit region of FIG. 1;

4 is a partial perspective view illustrating nanoparticles forming an active layer;

5A and 5B are plan views of a first active layer and a second active layer, respectively;

6 is a plan view showing a state in which nanoparticles are arranged on a substrate;

7A to 7C are cross-sectional views illustrating examples of the LITI method as a method for forming the nanofilm according to FIG. 6.

8 and 9 are cross-sectional and plan views of a donor sheet used in the method of FIGS. 7A-7C, respectively;

10A and 10B illustrate an example of a method of manufacturing the donor sheet of FIGS. 8 and 9;

11 to 15 are views showing another example of a method of manufacturing the donor sheet of FIGS. 8 and 9,

16 is a partial perspective view showing nanoparticles forming an active layer according to another embodiment of the present invention;

17 is a plan view schematically illustrating a structure of a thin film transistor active layer of an active matrix organic light emitting display device according to another embodiment of the present invention, having the active layer shown in FIG. 16;

18 and 19 are cross-sectional views illustrating a circuit TFT and a pixel TFT, respectively.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat panel display, and more particularly, to an active matrix flat panel display having a thin film transistor.

A thin film transistor (TFT) used in a flat panel display device such as a liquid crystal display device, an organic electroluminescent display device, or an inorganic electroluminescent display device is a pixel part thin film transistor such as a switching device or a driving device of a pixel, and for driving the same. Circuit part of the circuit area is used as a thin film transistor.

The thin film transistor has a semiconductor active layer having a drain region and a source region doped with a high concentration of impurities on a substrate, and a channel region formed between the drain region and the source region, and the gate insulating film and the active layer formed on the semiconductor active layer. And a gate electrode formed on the gate insulating film above the channel region.

The organic electroluminescent device has a light emitting layer made of organic water between an anode electrode and a cathode electrode. In this organic electroluminescent device, as the anode and cathode voltages are applied to these electrodes, holes injected from the anode electrode are moved to the light emitting layer via the hole transport layer, and electrons are transferred from the cathode electrode through the electron transport layer. Is injected into the light emitting layer, and electrons and holes recombine in the light emitting layer to generate excitons, and as the excitons change from the excited state to the ground state, the fluorescent molecules in the light emitting layer emit light to form an image. In the case of a full color organic light emitting display device, full color is realized by including pixels emitting three colors of red (R), green (G), and blue (B) as the organic light emitting diode.

In such an active matrix type organic light emitting display (AMOLED), a high resolution panel is increasingly required. In this case, a thin film transistor formed of high-performance polycrystalline silicon, as described above, causes problems.

In an active matrix flat panel display device such as a conventional active matrix type organic light emitting display device, a circuit part thin film transistor and a pixel part thin film transistor, in particular, a driving thin film transistor are manufactured from the same polycrystalline silicon, and the driving thin film transistor and the circuit part thin film are manufactured. Since the transistors have the same current mobility, the switching characteristics of the circuit thin film transistors and the low current driving characteristics of the driving thin film transistors cannot be satisfied at the same time. That is, when the driving thin film transistor and the circuit thin film transistor of the high resolution display device are manufactured using a polycrystalline silicon film having a large current mobility, the high switching characteristics of the circuit thin film transistor can be obtained, but the driving thin film transistor is used as an EL element through the driving thin film transistor. As the amount of current flowing increases, the luminance becomes excessively high, and as a result, the current density per unit area is increased, thereby reducing the lifetime of the EL element.

On the other hand, when the driving thin film transistor and the circuit thin film transistor of the display device are manufactured using an amorphous silicon film having a low current mobility, the driving thin film transistor is in the direction of decreasing current, and the circuit thin film transistor is in the direction of increasing current. The thin film transistor should be manufactured.

In order to solve this problem, a method of limiting the amount of current flowing through the driving transistor has been proposed. As a method, the resistance of the channel region is increased by reducing the ratio of the width to the width of the driving transistor (W / L), or the resistance is increased by forming a low-doped region in the source / drain region of the driving transistor. There was a back.

However, the method of increasing the length to reduce the W / L has a length of the channel region, and when the crystallization is performed using the Excimer Laser Annealing (ELA) method, streaks are formed in the channel region, and the opening area is reduced. There was a declining issue. The method of reducing the width by reducing the width is limited by the design rules of the photolithography process, and it is difficult to secure the reliability of the transistor. In addition, the method of increasing the resistance by forming a low doping region has a problem that an additional doping process should be performed.

On the other hand, the recent flat panel display devices are flexed by applying a predetermined tension to secure a sufficient viewing angle, or to be adopted in portable products such as arm bands, wallets, and notebook computers. The demand for is rising.

However, when the polycrystalline silicon TFT is formed by the conventional method, it is difficult to obtain a flexible flat panel display. In other words, in order to process flexible products, acrylic, polyimide, polycarbonate, polyester, mylar and other plastic materials should be employed as materials that can be easily bent on most components including substrates. These plastic materials are susceptible to heat.

 Therefore, in particular, in order to process TFTs of flat panel displays employed in flexible products, a structure and method that can be manufactured below a temperature that the plastic material can withstand are needed.

In order to manufacture a TFT employed in such a flexible product, a method of employing a nanostructure as a channel of a TFT is disclosed recently, as can be seen in Japanese Patent 2004-048062.

The present invention has been made to solve the above problems, and an object thereof is to provide a flat panel display device having a thin film transistor having a high characteristic value.

Another object of the present invention is to provide a flat panel display device capable of improving circuit characteristics and resolution.

Another object of the present invention is to provide a flat panel display device which can simply implement flexible characteristics.

In order to achieve the above object, the present invention, at least one pixel portion thin film having a light emitting device, a semiconductor active layer electrically connected to the light emitting device, having at least one nanoparticles, the channel is formed A pixel region including a transistor and a circuit region including at least one circuit part thin film transistor having a semiconductor active layer having at least one or more nanoparticles and having a channel formed thereon by controlling a signal applied to the pixel region. The channel of the circuit part thin film transistor and the channel of the pixel part thin film transistor are provided to have different directions.

The present invention also provides at least one pixel portion thin film transistor comprising a light emitting element, a semiconductor active layer electrically connected to the light emitting element, having at least one nanoparticle, and having a channel formed therein. And a circuit region for controlling a signal applied to the pixel region, the circuit region including at least one circuit part thin film transistor having at least one nanoparticle and having a semiconductor active layer in which a channel is formed. The angle formed by the channel direction of the semiconductor active layer and the longitudinal direction of the nanoparticles in the circuit portion thin film transistor, and the angle formed by the channel direction of the semiconductor active layer and the longitudinal direction of the nanoparticles in the pixel portion thin film transistor are different from each other. Provide the device.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1 is a plan view illustrating an active matrix organic light emitting display device according to a preferred embodiment of the flat panel display device according to the present invention. Referring to FIG. 1, the organic light emitting display device includes a pixel region P and a circuit region C at an edge of the pixel region P. In FIG.

The pixel area P includes a plurality of pixels, and each pixel includes a plurality of sub-pixels each having an organic EL device. In the case of a full color organic light emitting display, subpixels of red (R), green (G), and blue (B) are arranged in various patterns such as lines, mosaics, and lattices to form pixels. It may be a mono color flat panel display instead of a display.

The circuit region C connects a power source for driving the pixel region P, and controls an image signal input to the pixel region P. FIG.

In the organic light emitting display device, at least one thin film transistor may be provided in the pixel region P and the circuit region C, respectively.

FIG. 2 is a cross-sectional view of one of the subpixels R, G, and B of the pixel region P of FIG. 1. Hereinafter, the pixel portion thin film transistor referred to in the present specification means a thin film transistor of one subpixel that is unspecified among the subpixels positioned in the pixel region P. For example, in the case of full color, the red, green, and blue angles The relationship between the thin film transistors of the subpixels is not considered.

The pixel portion thin film transistor 20 illustrated in FIG. 2 illustrates a driving thin film transistor, which is electrically connected to the storage capacitor 30 and one organic electroluminescent element (hereinafter referred to as “EL element” 40). It is connected.

Referring to FIG. 2, first, a second active layer 21 is formed on the substrate 1. In this case, the buffer layer 1a may be further provided on the substrate 1. The second active layer 21 is made of nanoparticles, as will be described later.

After the gate insulating film 23 is formed to cover the second active layer 21, the gate electrode 24 and the interlayer insulating film 25 are sequentially formed, and then a contact hole 26a is formed.

Source and drain electrodes 26 are disposed on the interlayer insulating layer 25, and the source and drain electrodes 26 are connected to the nanoparticles of the second active layer 21 through the contact holes 26a. By this formation, the second TFT 20 according to the present invention is formed.

Meanwhile, when the gate electrode 24 and the source / drain electrode 26 are formed, the storage capacitor 30 may be formed of the same material. That is, the lower electrode 31 of the storage capacitor 30 is formed of the same material as the gate electrode 24, and the upper electrode 32 of the storage capacitor 30 is formed of the same material as the source / drain electrode 26. do.

A planarization layer 27 is formed on the source / drain electrode 26 as an insulator, and the planarization layer 27 is an inorganic layer such as silicon nitride and / or an organic layer such as acrylic, BCB, polyimide, etc. It can be formed as.

Via holes are formed in the planarization layer 27 so that any one of the source and drain electrodes 26 of the second TFT 20 is exposed. The pixel electrode 41, which is a lower electrode layer of the organic light emitting diode 40, is formed on the planarization layer 27. The pixel electrode 41 is connected to one of the source and drain electrodes 26 through a via hole.

The pixel defining layer 28 is formed on the pixel electrode 41 by an organic material such as acrylic, BCB, polyimide, and / or an inorganic material such as silicon oxide or silicon nitride. 3, the pixel defining layer 28 is formed to have an opening so that a predetermined portion of the pixel electrode 41 is exposed.

And the organic film 42 provided with the light emitting layer is apply | coated on the opening part which the pixel electrode 41 was exposed at least. The organic layer 42 may be formed on the entire surface of the pixel defining layer 28. In this case, the emission layer of the organic layer 42 may be patterned in red, green, and blue for each pixel to implement full color.

After the organic film 42 is formed, the counter electrode 43, which is the other electrode of the organic EL device 40, is formed. The counter electrode 43 may be formed to cover all the pixels, but is not limited thereto, and may be patterned.

The pixel electrode 41 and the counter electrode 43 are insulated from each other by the organic layer 42, and apply light to the organic layer 42 to emit light in the organic layer 42. .

On the other hand, the pixel electrode 41 functions as an anode electrode, and the counter electrode 43 functions as a cathode electrode. Of course, the polarities of these pixel electrodes 41 and the counter electrode 43 may be reversed.

The pixel electrode 41 may be provided as a transparent electrode or a reflective electrode. When the pixel electrode 41 is used as a transparent electrode, the pixel electrode 41 may be provided as ITO, IZO, ZnO, or In 2 O 3. After forming a reflective film with Pt, Pd, Au, Ni, Nd, Ir, Cr, a compound thereof, or the like, ITO, IZO, ZnO, or In 2 O 3 can be formed thereon.

On the other hand, the counter electrode 43 may also be provided as a transparent electrode or a reflective electrode. When the counter electrode 43 is used as a transparent electrode, the counter electrode 43 is used as a cathode, and thus a metal having a small work function, that is, Li, Ca, or LiF. / Ca, LiF / Al, Al, Mg, and their compounds are deposited to face the organic film 42, and then the auxiliary electrode layer with a material for forming a transparent electrode such as ITO, IZO, ZnO, or In2O3 Or a bus electrode line can be formed. When used as a reflective electrode, Li, Ca, LiF / Ca, LiF / Al, Al, Mg, and compounds thereof are formed by depositing the entire surface.

The organic layer 42 may be a low molecular or high molecular organic layer. When the low molecular organic layer is used, a hole injection layer (HIL), a hole transport layer (HTL), and an organic emission layer (EML) may be used. ), An electron transport layer (ETL), an electron injection layer (EIL), and the like may be formed by stacking a single or a complex structure, and the usable organic material may be copper phthalocyanine (CuPc). , N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), Various applications are possible, including tris-8-hydroxyquinoline aluminum (Alq3). These low molecular weight organic layers are formed by the vacuum deposition method.

In the case of the polymer organic layer, the structure may include a hole transporting layer (HTL) and a light emitting layer (EML). In this case, PEDOT is used as the hole transporting layer, and polyvinylvinylene (PPV) and polyfluorene are used as the light emitting layer. Polymer organic materials such as (Polyfluorene) are used and can be formed by screen printing or inkjet printing.

 The structure of the pixel area as described above is not necessarily limited thereto, and may be variously applied. In addition, the thin film transistor may further include a plurality of thin film transistors for implementing various circuits connected to the driving thin film transistor in addition to the driving thin film transistor, and the capacitor may also exist in various ways depending on the circuit to be implemented.

FIG. 3 shows a cross section of the circuit portion thin film transistor 10 provided in the circuit region C. Since the structure is the same as that of the pixel portion thin film transistor 20 described above, a detailed description thereof will be omitted. In this case, as described above, the first active layer 11 of the circuit part thin film transistor 10 may include at least one nanoparticle, which may be formed simultaneously with the second active layer 21.

Of course, the number and arrangement of the thin film transistors in the circuit region C may vary depending on the characteristics of the display and the driving method, and the arrangement may also vary depending on the type of circuit to be implemented.

On the other hand, according to a preferred embodiment of the present invention, the first active layer 11 and the second active layer 21 may be provided with at least one nanoparticle, according to a preferred embodiment of the present invention, FIG. As can be seen at 4, a plurality of nanoparticles 60 can be arranged side by side, they can be arranged parallel to each other.

These nanoparticles 60 may have the form of nanowires, nanoribbons, nanorods, monolayer walls or multi-layered nanotubes.

4 illustrates a state in which the nanowires are arranged in one direction, the boundary 61 is provided between the nanoparticles 60 as shown in FIG. 4.

According to an exemplary embodiment of the present invention, as shown in FIGS. 5A and 5B, the nanoparticles 60 form the first active layer 11 and the second active layer 21.

5A and 5B, the nanoparticles 60 in the first active layer 11 and the second active layer 21 are arranged in a direction substantially parallel to the longitudinal direction thereof. Thus, the nanoparticles 60 The lengthwise direction of) is the direction N.

Meanwhile, in the first active layer 11 and the second active layer 21, the channels C1 and C2 correspond to a region between the source region and the drain region, and become flow paths of carriers such as electrons and holes. .

These channels C1 and C2 are formed in a predetermined direction, as shown in Figs. 5A and 5B, and the channel formation direction is the direction C. Figs. Herein, the formation direction of the channel may be regarded as a direction in which carriers move through the channel, that is, a general flow direction of carriers in the channel.

In the present invention, the first active layer 11 and the second active layer 21 are disposed to have different directions, respectively. At this time, it is sufficient that the channels C1 and C2, which are the central portions of the first active layer 11 and the second active layer 21, have such different directions, but due to the complexity of the structural design, the first active layer (11) and the second active layer 21 as a whole have different directions. Therefore, hereinafter, the direction of the channels of the active layer of the thin film transistor will be described in the direction of the active layer, which means that only the direction of the channels is sufficient, and this fact is equally applied to all the embodiments described below.

As described above, in the organic electroluminescent display device, in order to form a TFT suitable for high resolution, in particular, a small high resolution, the on current of the circuit portion TFT is increased, and the on current of the pixel portion TFT, particularly the driving TFT, is increased. It should be lowered. In the present invention, the on current control of the TFTs is realized by changing the direction of the channel of each TFT. That is, by adjusting the direction of the channel of the circuit portion TFT and the direction of the channel of the pixel portion TFT, the on current of the circuit portion TFT is increased and the on current of the pixel portion TFT is decreased.

Therefore, the direction of the channel of the circuit portion TFT and the channel of the pixel portion TFT as described above may be determined according to the current mobility in the channel of each active layer. This is because, if the current mobility in the channel of the active layer is large, the on current is large, and if the current mobility in the channel is small, the on current is small. As a result, as described above, in order to lower the on current of the pixel portion TFT to realize high resolution, the current mobility in the channel of the active layer of the pixel portion TFT is lower than the current mobility in the channel of the active layer of the circuit portion TFT. It is necessary to adjust the direction of the channel of the sub TFT and the channel of the circuit part TFT.

As shown in FIGS. 5A and 5B, the difference in the current mobility is the direction N of the nanoparticles 60 forming the active layers and the channel formation direction of the active layers 11 and 21. It can be obtained by changing the angle with C. This will be described in more detail below.

As described above, the nanoparticles 60 forming the respective active layers are arranged to be substantially parallel to each other along a predetermined direction, for example, the N direction, and a boundary 61 is formed between each of the nanoparticles 60. .

Thus, in the active layer structure in which the nanoparticles 60 are arranged side by side in one direction, the anisotropy can be exhibited in the TFT characteristics according to the direction of the channel of the active layer. That is, the current mobility and the current value in the channel vary depending on which direction the channel of the active layer is formed in the arrangement of the nanoparticles as described above.

The nanoparticles 60 are themselves provided with a semiconductor material, thereby becoming a layer through which a carrier can move. However, the boundary 61 between the nanoparticles 60 serves as a resistance component to the movement of the carrier in the channel.

Thus, how much of the boundary 61 between the nanoparticles 60 is in the channel and at what angle to the carrier's path of travel may affect the current mobility.

That is, when the channel direction of the active layer is approximately 0 ° with the direction in which the nanoparticles 60 are aligned, for example, the length direction of the nanoparticles 60, the channel direction has a large number of boundaries 61. When the carrier is moved in parallel with the carrier, the boundary 61 which is a resistance component to the carrier's movement is reduced, resulting in a large current mobility.

On the contrary, when the channel direction of the active layer is approximately 90 ° with the longitudinal direction of the nanoparticles 60, the channel direction is disposed substantially perpendicular to a large number of boundaries 61 so that when the carrier moves, The boundaries 61, which are resistance components to the movement of the carriers, are lessened, resulting in less current mobility.

In other words, how much the boundary of the nanoparticles acting as a resistance component in the direction of movement of the carrier can be seen as a difference in the current mobility. This difference in current mobility appears as a difference in on current, as described above. In other words, if the current mobility shows a small value, the on current drops, and if the current mobility increases, the on current increases.

This means that the current mobility decreases as the angle of the nanoparticles 'alignment direction increases with respect to the channel direction of the active layer, thereby reducing the on current, and the angle of the nanoparticles' alignment direction with respect to the channel direction of the active layer. As it decreases, the current mobility increases, and accordingly, the on current also increases.

Therefore, the angle formed by the longitudinal direction of the nanoparticles forming this channel with respect to the channel direction of the circuit portion TFT requiring a high on current value is the pixel portion TFT, especially a driving TFT that requires a low on current value. It is preferable that the angle formed by the longitudinal direction of the nanoparticles forming the channel with respect to the channel direction of is smaller.

At this time, since the nanoparticles may not all be arranged in a straight line, and some may be formed in a slightly oblique direction, as shown in FIG. 5A, the first active layer 11 of the circuit portion TFT has the channel direction C with respect to the channel direction C. FIG. It is preferable that the angle formed by the longitudinal direction N of the nanoparticles 60 is -45 ° to 45 °. More preferably, the circuit portion TFT preferably has an angle formed by the longitudinal direction N of the nanoparticles 60 with respect to the channel direction C of approximately 0 °.

In addition, as shown in FIG. 5B, the pixel portion TFT, particularly the driving TFT, has an angle of 45 ° to 135 ° between the longitudinal direction N of the nanoparticles 60 with respect to the channel direction C of the second active layer 21. It is preferable that it is and it is more preferable that it is about 90 degrees.

Meanwhile, as shown in FIGS. 5A and 5B, in the case of forming an active layer elongated in the carrier moving direction, as shown in FIG. 5B, the channel direction C is perpendicular to the longitudinal direction N of the nanoparticles 60. 5A, the dispersion of the TFT characteristics may be smaller than when the channel direction C is horizontal to the longitudinal direction N of the nanoparticles 60.

As can be seen in FIG. 5A, the longitudinal ends 60a of the nanoparticles 60 are present in the first active layer 11. The ends 60a of these nanoparticles 60 are inevitably present because of the limited length of the nanoparticles.

However, the end portion 60a of the nanoparticles 60 may be irregularly present in the channel C1 when the nanoparticles are arranged parallel to the channel direction as shown in FIG. 5A. The end portion 60a of the nanoparticles 60 present in the channel C1 acts as a resistance to carrier movement.

On the other hand, as shown in Figure 5b, even when the nanoparticles are arranged perpendicular to the channel direction, the end portion (60a) of the nanoparticles 60, but they are all arranged in parallel to the carrier moving direction, The function as a resistance to movement is reduced.

As a result, in the case of FIG. 5A, the end portion 60a of the nanoparticles 60 acts as a resistance to carrier movement, and in FIG. 5B, the boundary 61 between the nanoparticles 60 is connected to the carrier movement. It acts as a resistance element.

However, in the case of the nanoparticles 60, as described below, since the aspect ratio is very large, the length variation is more severe than the thickness variation. Therefore, the number of the end portion 60a of the nanoparticles 60 present in one channel varies greatly depending on the length of the nanoparticles 60, but between the nanoparticles 60 present in one channel. The number of boundaries 61 is less than this deviation.

Accordingly, as shown in FIG. 5A, when the angle formed by the longitudinal direction N of the nanoparticles with respect to the channel direction C becomes approximately 0 °, the current mobility exhibits a large value, but the nanoparticles 60 in the channel The deviation with respect to the edge part 60a is severe, and the dispersion of current mobility is also large. On the other hand, when the angle formed by the longitudinal direction N of the nanoparticles with respect to the channel direction C becomes approximately 90 °, as shown in FIG. 5B, the current mobility shows a small value, but between the nanoparticles 60 in the channel. The deviation with respect to the boundary 60 is small, and the dispersion of the current mobility is small. In other words, when the angle formed by the nanoparticles in the longitudinal direction of the channel direction is 90 °, the current mobility is smaller but the dispersion is smaller than when the angle formed by the nanoparticles in the longitudinal direction is 0 ° relative to the channel direction. It will be able to exhibit uniform characteristics. Therefore, such a small dispersion becomes more suitable for the driving TFT requiring more uniform characteristics.

As described above, when the angle of the nanoparticles in the longitudinal direction of the channel direction becomes 90 °, the current mobility is smaller than that of 0 °, and the dispersion of the TFT characteristics is more uniform.

Therefore, the channel of the pixel TFT having the uniform characteristics under the same driving conditions is designed as shown in FIG. 5B in which the length of the nanoparticles in the longitudinal direction is 90 ° with respect to the channel direction. If the angle of the nanoparticles in the longitudinal direction of the channel direction is designed to be 0 °, when manufacturing a high-resolution product, it is possible to obtain more excellent luminance uniformity, and at the same time improve the life characteristics of the light emitting device.

5A and 5B described above conceptually show a relationship between a channel and nanoparticles constituting the active layer, and are not necessarily designed at the angles described above. However, it is sufficient that the angle formed between the direction N and the direction C is smaller in the case of the first active layer 11 of the circuit portion TFT than in the case of the pixel portion TFT.

After the first active layers 11 and the second active layers 21 arrange the nanoparticles 60 on the substrate 1 in approximately the same direction as shown in FIG. 6, the first active layers 11 and the second active layers 21 are formed in the respective subpixels. (11) and the second active layers 21 can be obtained by patterning to have the arrangement as shown in Figs. 5A and 5B. At this time, the substrate 1 is preferably formed of a flexible material, acrylic, polyimide, polycarbonate, polyester, mylar and other plastic materials may be used, thin glass, surface-insulated Metal materials can also be used.

In this case, as described above, the nanoparticles may have the form of nanowires of nanowires, nanoribbons, nanorods, monolayer walls, or multilayer walls.

As examples of the method of manufacturing such nanoparticles, there may be further methods as follows.

(a) P-type Si nanowires

P-type Si nanowires with a thickness of 20-40 nm were synthesized by thermal evaporation of SiH4 and B2H6 using a commercially available mono-dispersed gold colloid particle (British Biocell International Ltd) as a catalyst. Lose. The temperature is then used between 420-480 ° C and the reactor is controlled to allow computer-controlled growth in an 8-inch tube furnace. When the total pressure is 30 torr, the silane partial pressure is about 2 torr and the reaction time is 40 minutes. The ratio of SiH4 and B2H6 is adjusted to 6400: 1 in consideration of the doping level. At this time, the doping concentration of the nanowire is estimated to be about ~ 4x10E + 17 cm-3. The higher the doping level, the lower the contact resistance is without the high temperature annealing process.

(b) N-type Si nanowires

N-type Si nanowires are synthesized by laser-assisted catalytic growth (LCG). In brief, a method of ablation of a gold target is adopted using a laser beam of an Nd: YAG laser (532 nm; 8 ns pulse width, 300 mJ / pulse, 10 Hz). At this time, the gold nanocluster catalyst particles generated are reacted with SiH4 gas in the reaction vessel to grow into Si nanowires. In the case of doping, Au-P target (99.5: 0.5 wt%, Alfa Aesar) and supplemental red phosphorus (99% Alfa Aesar) are formed at the gas inlet of the reaction vessel.

(c) N-type GaN nanowires

Ammonia gas (99.99%, Matheson), gallium metal (99.9999%, Alfa Aesar) and magnesium nitride (Mg3N2, 99.6%, Alfa Aesar) are used as sources of N, Ga, and Mg, respectively. catalyzed CVD). The substrate used at this time is preferably c-plane sapphire (c-plane sapphire). Mg3N2 thermally decomposes to form MgN2 (s) = 3Mg (g) + N2 (g), producing Mg dopants and placing them upstream of the Ga-source. GaN nanowires are formed at a temperature of 950 ° C., and nickel is used as a catalyst. Most of them have a distribution of 10 ~ 40 um.

(d) N-type CdS Nano Ribbon

CdS nanoribbons (nano-ribbon) are synthesized by the vacuum capour transport (vacuum capour transport) method. In particular, place a small amount of CdS powder (~ 100mg) on one end of the tube and seal it. While heating the tube to keep the temperature of the CdS powder at 900C, keep the other end lower than 50C. Within two hours, most of the CdS will migrate to the cold side and stick to the tube wall. The materials obtained in this way are predominantly nanoribbons with a thickness between 30-150 nm, with a width of 0.5-5 um and a length of 10-200 um.

(e) Ge nanowires

In a 2.5 cm diameter furnace reactor (total pressure = 1 atm), H2 was flowed at a flow rate of 100 sccm while maintaining a flow rate of GeH4 (10% in He) at 10 sccm (standard cubic centimeters) at 275C. Obtained by CVD for a minute. The reaction substrate is a substrate in which Au nanocrystals (average 20 nm diameter) are evenly dispersed on the surface of SiO 2 substrate.

(f) InP nanowires

InP nanowires are formed by LCG method. The LCG target is generally composed of 94% InP, 5% Au as catalyst, 1% Te or Zn as doping element. The furnace temperature is maintained at (intermediate) 800C during growth and the target is located at the upstream end rather than in the middle of the furnace. The laser condition irradiates the pulse of an Nd-YAG laser (wavelength 1064 nm) for 10 minutes, at which time the nanowires are captured downstream of the cold short side of the furnace.

(g) ZnO nanorods

ZnO nanorods are approximately 29.5 g (0.13 mol) of zinc acetate dihydrate (ZnOCOCH3-2H2O) dissolved in 125 mL of methanol at 60C and then 14.8g (0.23 mol) in 65 mL of methanol. Is prepared by adding a solution of potassium hydroxide (KOH). The reaction mixture is stirred for several days at 60C. If nanorods precipitate within a few days, the precipitates are washed with methanol and centrifuged at 5500 rpm for 30 minutes. The obtained nanoparticles are diluted with a solvent of ethylene glycol / water 2: 1 to make a solution. When aged for 3 days, nanorods of 15-30 nm in diameter and 200-300 nm in length can be obtained. Alternatively, nanowires can be obtained using the CVD method.

These nanoparticles 60 may be formed on the substrate 1 by various methods.

For example, there is a laser induced thermal imaging method (hereinafter referred to as "LITI method").

7A to 7C show a method of forming nanoparticles 60 on the substrate 1 by the LITI method, and FIG. 8 shows a cross section of a donor sheet at this time, and FIG. 9 shows the plane of the donor sheet.

First, in the present invention, a method of forming active layers having nanoparticles according to the LITI method uses a donor sheet 70 as shown in FIGS. 8 and 9.

The donor sheet 70 forms the transfer layer 72 by arranging the nanowires 60 in the film 71 in parallel to the longitudinal direction thereof.

The film 71 includes a base film 73 serving as a substrate and a light to heat conversion layer (LTHC layer) 74. The base film 73 may be a polyolefin resin. In addition, the light-to-heat conversion layer 74 may be coated on the base film 73 by stirring carbon in acryl, but is not necessarily limited thereto, and converts the light of the laser into heat to heat the transfer layer 72. May be applied to transfer the transfer layer 340 or cause a laser ablation phenomenon.

As shown in FIG. 9, the donor sheet 70 has nanowires 60 aligned in one direction.

As shown in FIG. 7A, the donor sheet 70 is seated on the substrate 1 on which the buffer layer 1a is formed, and as shown in FIG. 7B, the donor sheet 70 is laminated and temporarily bonded to each other. In this state, when the laser beam is irradiated to a predetermined site where the pattern is to be formed, and the donor sheet 70 and the substrate 1 are separated, as shown in FIG. 7C, the nanoparticles 60 are formed on the substrate 1. Is formed.

The donor sheet 70 in which the nanowires 60 are aligned in one direction may be manufactured by various methods. 10A and 10B illustrate an example.

First, as shown in FIG. 10A, a plurality of nanowires 60 are mixed in a water tank 80 in which a solution 81 such as water is stored. At this time, the nanowires 60 may be the above-described P-type nanowires or N-type nanowires, which are arranged in an irregular direction while floating on the solution 81.

Then, when the nanowires 60 on the surface of the solution 81 are pushed to one side using the alignment bar 82, the nanowires 60 are pushed to the alignment bar 82 to be concentrated to one side. In the case of a conventional nanowire, since its diameter or thickness is about 30 nm and the length is 40-50 micrometers, the aspect ratio is very large. Therefore, the nanowires 60 that are concentrated on one side are aligned in one direction, and the alignment direction is parallel to the longitudinal direction of the nanowires 60.

A plurality of rollers (83) are installed in the water tank (80), and the rollers (71) allow the film (71) to pass through the water tank (80). In this case, as shown in FIG. 8, the film 71 has a light-heat conversion layer 74 formed on the base film 73, so that the nanowires 60 are bonded to the light-heat conversion layer 74. The conversion layer 74 is passed through the water tank 80 to be in the direction of the nanowire 60.

When the nano wires 60 are bonded to the light-heat conversion layer 74 by passing through the water tank 80, the nano wires 60 are densely arranged on one side of the water tank 80, so that the nano wires 60 are aligned in one direction. do. The nanowires 60 may be aligned as they are bonded to the light-heat conversion layer 74 of the film 71. When the film 71 in which the nanowires 60 are aligned is dried and cut into a predetermined length, as shown in FIG. 9, the donor sheet 70 in which the nanowires 60 are aligned in one direction may be obtained.

In the method of forming the donor sheet 70, since the film 71 is continuously supplied in an inline shape, a roll-to-roll method is possible, and thus, a large number of donor sheets 70 can be continuously formed. do. Therefore, productivity can be further increased.

The donor sheet 70 may be manufactured by the method shown in FIGS. 11 to 15. This will be described in more detail as follows.

First, the first fiber and the second fiber are formed of a polymeric material. As shown in FIGS. 12 and 13, the first fiber 63 may be either a weft or a warp yarn when forming a woven fabric, and may be made of only a polymer material, and may not include nanoparticles 60. The second fiber 64 is a warp or weft that crosses the first fiber 63 at approximately right angles. As shown in FIG. 14, the plurality of nanoparticles 60 are substantially parallel to each other. Is arranged.

The first fibers 63 and the second fibers 64 may be manufactured using an electrospinning method as shown in FIG. 11, but are not necessarily limited thereto, and may be manufactured by various methods. Can be. Hereinafter, the manufacturing method of the 1st fiber 63 and the 2nd fiber 64 using the electro spinning method is demonstrated in more detail.

The electrospinning apparatus 90 as shown in FIG. 11 includes an injector 91 having a nozzle 411, a power supply 95 for applying high frequency power to the injector 91, and an injection from the nozzle 91. And a collector 94 for forming nano-sized fibers with the polymer solution.

A predetermined polymer solution 93 is injected into the injector 91, and the polymer solution 93 is injected into the collector 94 which rotates while applying a high frequency power to the polymer solution 93. Then, the collector 94 is stretched and wound.

The polymer solution 93 is a polymer solution in which nanoparticles are not mixed when the first fibers 63 are formed, and a polymer solution in which nanoparticles are mixed when the second fibers 64 is formed. use. The method for producing nanoparticles is as described above.

When the second fiber 64 is formed of the polymer solution including the nanoparticles, the nanoparticles 60 included in the second fiber 64 may be formed of the second fiber 64, as shown in FIG. 14. Aligned in the stretching direction. Thus, the nanoparticles 60 arranged in parallel with each other can be obtained.

Next, the woven fabric 62 is formed such that the first fiber 63 not including the nanoparticles and the second fiber 64 including the nanoparticles cross each other as shown in FIG. 12 or FIG. 13. Since the woven fabric 62 contains nanoparticles only in the second fiber 64, the nanoparticles are arranged in parallel to the direction in which the second fiber 64 is arranged.

Therefore, as shown in FIG. 15, when the woven fabric 62 is laminated on the film 71 in which the light-heat conversion layer 74 is formed, as shown in FIG. 9, the nanoparticles 60 are separated from each other. The donor sheet 70 arrange | positioned substantially parallel can be obtained. At the time of laminating, the woven fabric 62 proceeds in a state of being in close contact with the light-heat conversion layer 74 of the film 71.

In the method of forming the donor sheet 70, since the woven fabric 62 is manufactured in a roll shape, many donor sheets 70 may be continuously formed using the woven fabric 62, and thus productivity may be further increased.

On the other hand, the woven fabric 62 may be directly laminated on the substrate, without directly making the donor sheet 70, to directly coat the nanoparticles 60 on the substrate.

Although the above has described the laser transfer method as an example, the present invention is not necessarily limited thereto, and the transfer layer of the donor sheet may be transferred by an external pressure rather than a laser. In this case, the general transfer method can be applied as it is.

On the other hand, according to the laser transfer method as described above, as shown in Figure 6, without having to form the nanoparticles 60 over the entire area on the substrate 1, using a mask immediately as shown in Figures 5a and 5b An active layer pattern including the nanoparticles 60 may be formed.

That is, as described above, after aligning the donor sheet 70 as shown in Fig. 9 on the substrate, a mask having an opening having a pattern as shown in Figs. 5A and 5B is prepared, and the laser is placed through the mask. By transferring, the active layer pattern as shown in FIGS. 5A and 5B can be obtained immediately.

On the other hand, the active layer pattern made of nanoparticles is not necessarily limited to the above.

For example, as shown in FIG. 16, nanoparticle layers 60s and 60d are formed to have different arrangements of nanoparticles 60. As a result, as shown in FIG. It may be patterned to be the same.

Referring to FIG. 16, the circuit part nanoparticle layer 60c is formed by arranging the nanoparticles 60 in one direction, and after forming the insulating film 65 to cover the pixel part nanoparticle layer, the pixel part nanoparticle layer is again formed on the insulating film 65. 60p is arranged such that the nanoparticles 60 are orthogonal to the nanoparticles 60 of the circuit portion nanoparticle layer 60c.

After arranging the nanoparticle layers, all active layers are patterned to have the same direction as shown in FIG. 17.

Thereafter, as shown in FIGS. 18 and 19, the above-described effects can be obtained by adjusting the nanoparticle layers to which the source / drain electrodes of each circuit unit TFT 10 and the pixel unit TFT 20 are connected. In this case, all of the first active layers 11 and the second active layers 21 have the circuit portion nanoparticle layer 60c and the pixel portion nanoparticle layer 60p.

That is, as shown in FIG. 18, the circuit unit TFT 10 includes the first active layer 11 having both the circuit unit nanoparticle layer 60c and the pixel unit nanoparticle layer 60p. At this time, the contact hole 16a is formed to contact the circuit portion nanoparticle layer 60c so that the source / drain electrode 16 contacts the circuit portion nanoparticle layer 60c. In this case, the direction of the nanoparticles of the circuit portion nanoparticle layer 60c and the channel direction of the first active layer 11 are substantially parallel.

FIG. 19 shows the pixel portion TFT 20. The second active layer 21 of the pixel portion TFT 20 also has both a circuit portion nanoparticle layer 60c and a pixel portion nanoparticle layer 60p. In this case, the contact hole 26a is formed to contact the pixel portion nanoparticle layer 60p so that the source / drain electrode 26 contacts the pixel portion nanoparticle layer 60p, so that the nanoparticles of the pixel portion nanoparticle layer 60p are contacted. The direction of the particles and the channel direction in the second active layer 21 are approximately perpendicular.

As described above, the present invention is applied to an organic electroluminescent display, but the present invention is not limited thereto, and the present invention can be applied to any structure that can use a TFT such as a liquid crystal display or an inorganic electroluminescent display. .

According to the present invention as described above, the following effects can be obtained.

First, even if the size of the active layer of the TFT or the active layer of the same size is changed without changing the driving voltage, the amount of current transferred from the pixel portion TFT to the light emitting element can be reduced, thereby obtaining a structure suitable for high resolution.                     

Second, a circuit portion TFT having excellent switching characteristics can be obtained by utilizing the characteristics of the nanoparticles, and at the same time, a pixel portion TFT, particularly a driving TFT, which can realize high resolution can be obtained.

Third, uniformity of luminance can be obtained only by arranging TFTs, and life deterioration can be prevented.

Fourth, there is no need to increase the length L in the current direction of the pixel portion TFT, and there is no problem of decreasing the aperture ratio.

Fifth, it is not necessary to reduce the width W of the pixel portion TFT, so that the reliability can be improved.

Sixth, by using nanoparticles in a channel of a thin film transistor, a thin film transistor and a flat panel display device, particularly an organic light emitting display device, can be manufactured at room temperature or low temperature without undergoing a high temperature process.

Seventh, accordingly, a plastic material vulnerable to high temperature heat treatment can be used for the flat panel display. Therefore, it is more advantageous to manufacture a flexible flat panel display.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims (23)

A pixel region including at least one pixel portion thin film transistor having a light emitting element and a semiconductor active layer electrically connected to the light emitting element, the semiconductor active layer having at least one nanoparticle, and having a channel formed therein; And And a circuit region for controlling a signal applied to the pixel region, the circuit region including at least one circuit portion thin film transistor having at least one nanoparticle and having a semiconductor active layer in which a channel is formed. And a channel of the circuit part thin film transistor and a channel of the pixel part thin film transistor have different directions. The method of claim 1, The direction of the channels of the circuit part thin film transistor and the pixel part thin film transistor is different from each other so that the current mobility in the channel of the circuit part thin film transistor is different from the current mobility in the channel of the pixel part thin film transistor. . The method of claim 2, The direction of the channels of the circuit portion thin film transistor and the pixel portion thin film transistor, the current mobility in the channel of the circuit portion thin film transistor is made to be larger than the current mobility in the channel of the pixel portion thin film transistor. . The method of claim 1, And at least two nanoparticles are provided in the semiconductor active layers of the circuit part thin film transistors, and they are arranged in substantially parallel to each other. The method of claim 1, And at least two nanoparticles are provided in the semiconductor active layers of the pixel portion thin film transistors, and are arranged in substantially parallel to each other. The method of claim 1, And at least one of the nanoparticles is a nano wire, a nano rod, or a nano ribbon. The method according to any one of claims 1 to 6, An angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the circuit part thin film transistor, and an angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the pixel part thin film transistor. Display. The method of claim 7, wherein The angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the circuit portion thin film transistor is smaller than the angle formed by the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the pixel portion thin film transistor. . The method of claim 7, wherein And an angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the circuit part thin film transistor is -45 ° to 45 °. The method of claim 7, wherein And an angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the circuit part thin film transistor is approximately 0 °. The method of claim 7, wherein And an angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the pixel portion thin film transistor is 45 ° to 135 °. The method of claim 7, wherein And an angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the pixel portion thin film transistor is approximately 90 °. A pixel region including at least one pixel portion thin film transistor having a light emitting element and a semiconductor active layer electrically connected to the light emitting element, the semiconductor active layer having at least one nanoparticle, and having a channel formed therein; And And a circuit region for controlling a signal applied to the pixel region, the circuit region including at least one circuit portion thin film transistor having at least one nanoparticle and having a semiconductor active layer in which a channel is formed. The angle formed by the channel direction of the semiconductor active layer and the longitudinal direction of the nanoparticles in the circuit portion thin film transistor, and the angle formed by the channel direction of the semiconductor active layer and the longitudinal direction of the nanoparticles in the pixel portion thin film transistor are different from each other. Device. The method of claim 13, The angle formed between the channel direction of each of the semiconductor active layers and the length direction of the nanoparticles may be different from the current mobility in the channel of the circuit part thin film transistor and the current mobility in the channel of the pixel part thin film transistor. Flat Panel Display. The method of claim 14, And a current mobility in a channel of the circuit part thin film transistor is greater than a current mobility in a channel of the pixel part thin film transistor. The method of claim 14, And at least two nanoparticles are provided in the semiconductor active layers of the circuit part thin film transistors, and they are arranged in substantially parallel to each other. The method of claim 14, And at least two nanoparticles are provided in the semiconductor active layers of the pixel portion thin film transistors, and are arranged in substantially parallel to each other. The method of claim 14, And at least one of the nanoparticles is a nano wire, a nano rod, or a nano ribbon. The method according to any one of claims 14 to 18, The angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the circuit portion thin film transistor is smaller than the angle formed by the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the pixel portion thin film transistor. . The method of claim 19, And an angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the circuit part thin film transistor is -45 ° to 45 °. The method of claim 19, And an angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the circuit part thin film transistor is approximately 0 °. The method of claim 19, And an angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the pixel portion thin film transistor is 45 ° to 135 °. The method of claim 19, And an angle formed between the channel direction of the semiconductor active layer and the length direction of the nanoparticles in the pixel portion thin film transistor is approximately 90 °.

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