KR100610633B1 - Led having vertical structure and manufacturing method of the same - Google Patents

Abstract

A vertical structure light emitting diode capable of improving electrical conductivity and heat dissipation performance and a method of manufacturing the same are disclosed. The vertical structure light emitting diode includes a substrate, a light emitting structure, a first electrode, a second electrode, and a heat dissipation conductive portion. The light emitting structure is formed on the substrate, and the first electrode is formed on the light emitting structure. The heat dissipation conductive portion is formed in the substrate in contact with the light emitting structure, and the second electrode is formed in contact with the heat dissipation conductive portion. By forming a heat dissipation conductive part connecting the light emitting structure and the electrode to the inside of the substrate, it is possible to improve heat dissipation performance and electrical conductivity of the light emitting diode.

Light Emitting Diode, Vertical Structure, Heat Dissipation Conductive Part, Dry Etching

Description

Vertical structure light emitting diode and its manufacturing method {LED having vertical structure and manufacturing method of the same}

1 is a cross-sectional view of an example of a conventional horizontal structure light emitting diode.

2 is a cross-sectional view of an example of a vertical structure light emitting diode.

3A is a cross-sectional view of a vertical structure light emitting diode according to a first embodiment of the present invention.

3B is a cross-sectional view of the vertical structure light emitting diode cut along the line A A of FIG. 3A.

4A-4J illustrate step-by-step processes of the first method for fabricating the vertical structure light emitting diode of FIG. 3A.

5A-5J illustrate step-by-step processes of a second method for manufacturing the vertical structure light emitting diode of FIG. 3A.

6 is a cross-sectional view of a vertical structure light emitting diode according to a second embodiment of the present invention.

7A is a cross-sectional view of a vertical structure light emitting diode according to a third embodiment of the present invention.

FIG. 7B is a cross-sectional view of the vertical structure light emitting diode cut along the line B B of FIG. 7A.

8A to 8J illustrate step-by-step processes of the method for manufacturing the vertical structure light emitting diode of FIG. 7A.

<Code Description of Main Parts of Drawing>

410: sapphire substrate

420: silicon substrate

430: reflective layer

440: conductive adhesive layer

450: light emitting structure

460: heat dissipation conductive portion

470, 490: electrode

The present invention relates to a light emitting diode manufacturing method, and more particularly to a vertical structure light emitting diode manufacturing method.

Light emitting diodes (LEDs) are semiconductor devices that emit light based on recombination of electrons and holes, and are widely used as light sources of various types in optical communication and electronic devices.

The color of the light emitted by the light emitting diode depends on the semiconductor material used in the manufacture of the light emitting diode. This is because the wavelength of the emitted light depends on the band gap of the semiconductor material, which represents the energy difference between the valence band electrons and the conduction band electrons. Currently, AlGaInP is used to emit light from red to yellow, and InGaN is used to emit light from blue to green.

1 is a view showing an example of a cross-sectional view of a conventional horizontal structure light emitting diode. The light emitting diode shown in FIG. 1 is a horizontal structure GaN light emitting diode, and the GaN light emitting diode 100 includes a sapphire substrate 110 and a GaN light emitting structure 150 formed on the sapphire substrate 110.

The GaN light emitting structure 150 includes an n-type GaN cladding layer 152 sequentially formed on the sapphire substrate 110, an active layer 154 having a multi-quantum well structure, and a p-type GaN cladding layer 156. It is composed of The light emitting structure 150 may be grown using a process such as metal organic chemical vapor deposition (MOCVD). In this case, before the n-type GaN cladding layer 152 is grown, a buffer layer (not shown) made of AlN / GaN may be formed to improve lattice matching with the sapphire substrate 110.

The p-type cladding layer 156 and the active layer 154 corresponding to the predetermined region are dry etched to expose a portion of the top surface of the n-type GaN cladding layer 152, and the exposed n-type contact 190 and the p-type contact ( 170). In general, a transparent electrode 160 may be formed on the upper surface of the p-type cladding layer 156 before the p-type contact 170 is formed in order to increase the current injection area and not adversely affect luminance.

However, since the GaN light emitting diode 100 having such a structure uses the sapphire substrate 110 as an insulating material, the current flows from the n-type contact 190 to the p-type contact 170 through the active layer 154 is horizontal. It must be formed narrowly along the direction. Due to such a narrow current flow, the forward voltage of the light emitting diode 100 increases, resulting in a decrease in current efficiency, and a problem in that the electrostatic discharge effect is weak.

In addition, despite the large amount of heat generated by the increase of the current density, the heat emission is not smooth due to the low thermal conductivity of the sapphire substrate 110, the sapphire substrate 110 and the GaN light emitting structure 150 according to the heat increase Mechanical stresses may occur between the devices, leading to instability.

Furthermore, in order to form the n-type contact 190, at least a portion of the active layer 154 needs to be removed to be larger than the area of the contact 190 to be formed. There is a problem of deterioration.

2 is a cross-sectional view showing an example of a vertical structure light emitting diode designed to solve the disadvantage of the horizontal structure diode. The light emitting diode shown in FIG. 2 is a vertical structure GaN light emitting diode, and the GaN light emitting diode 200 includes a light emitting structure including a p-type GaN cladding layer 252, an active layer 254, and an n-type cladding layer 256. 250).

As shown in FIG. 2, the vertical structure light emitting diode 200 has a structure in which upper and lower portions of the diode 200 may be electrically connected to each other using a conductive substrate such as a silicon substrate 220. As a result, the heat dissipation effect of the diode 200 can be improved, and since the current flow is formed through a larger area than the horizontal structure light emitting diode, the forward voltage can be reduced, and the electrostatic discharge effect can also be improved. .

In addition, since the current density distribution can be sufficiently improved in terms of the process, the process of forming the transparent electrode is not necessary, and since the rigid sapphire substrate is removed, the process of cutting the individual element units can be simplified.

In addition, unlike a horizontal structured light emitting diode, the process of etching part of the active layer is not required in terms of the luminance of the LED, so that a wide light emitting area can be secured, thereby improving the luminance.

In FIG. 2, the silicon substrate 220 of the vertical structure light emitting diode 200 is bonded to the light emitting structure 250 of the epi layer, which generates light, by low temperature melting of a metal film using heat and pressure.

The silicon substrate 220 serves as a passage for electric current flowing through the light emitting structure 250 and a path for dissipating heat generated from the light emitting structure. Therefore, the electrical conductivity or heat dissipation performance of the silicon substrate 220 is a major factor in determining the performance of the diode device and the life of the device.

However, the silicon substrate 220 is limited in its electrical conductivity and heat dissipation performance due to the physical properties of silicon itself, a semiconductor material. As a result, there is a limit in increasing the heat dissipation performance and electrical conductivity of the vertical light emitting diode including the silicon substrate 220. This low heat dissipation performance and electrical conductivity is a major cause of deterioration of the performance and lifetime of the light emitting diode.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to improve the performance and lifespan of a light emitting diode by improving the electrical conductivity and heat dissipation performance of the vertical light emitting diode substrate. And a vertical structure light emitting diode manufacturing method.

The vertical light emitting diode according to the first aspect of the present invention for achieving the above object is a substrate, a light emitting structure formed on the substrate, a first electrode formed on the light emitting structure, a heat dissipation conductive portion formed in contact with the light emitting structure, and And a second electrode in contact with the heat radiation conductive portion.

As such, by forming a heat dissipation conductive portion connecting the light emitting structure and the electrode to the inside of the substrate, it is possible to improve heat dissipation performance and electrical conductivity of the light emitting diode.

The heat dissipation conductive part may be formed through the substrate, may be formed integrally or in plurality separated from each other, and may be formed by plating a metal such as copper or gold inside the substrate. The use of materials having excellent heat dissipation performance and electrical conductivity, such as copper or gold (Au), can further improve the performance and lifespan of light emitting diodes.

 The light emitting structure may further include a p-type semiconductor layer, an n-type semiconductor layer, a reflective layer including an active layer formed between the p-type semiconductor layer and the n-type semiconductor layer and reflecting light generated from the active layer. Inclusion of the reflective layer further improves the luminous efficiency of the light emitting diode.

The substrate may be a conductive substrate, in particular a silicon substrate. The silicon substrate has a smaller strength than the sapphire substrate and the like and can be easily cut through a conventional cutting process.

The light emitting diode may further include a conductive adhesive layer formed between the substrate and the light emitting structure, and the conductive adhesive layer may be formed of a bonding material including gold. In addition, an uneven portion may be formed in the conductive adhesive layer to reduce a bonding area between the light emitting structure and the substrate. By forming the uneven portion, it is possible to reduce the bonding area between the light emitting structure and the substrate to reduce the stress generated at the bonding interface.

According to a second aspect of the present invention, there is provided a method of manufacturing a vertical structure light emitting diode, the method comprising: forming a light emitting structure on a first substrate, and when the second substrate is bonded to the light emitting structure, a region having a predetermined depth in an area on the second substrate that contacts each light emitting structure. Forming a heat dissipation pattern, filling the heat dissipation pattern with a heat dissipation conductive material to form a heat dissipation conductive portion, bonding the heat dissipation conductive portion to the light emitting structure, and forming a surface on the second substrate facing the bonding surface until the heat dissipation conductive portion is exposed. And removing the first substrate, removing the first substrate, and forming the electrode on the light emitting structure from which the first substrate is removed.

The heat dissipation pattern on the second substrate may be formed by dry etching, and by using dry etching, processing accuracy in forming the pattern may be excellent.

The second substrate and the light emitting structure may be bonded by a conductive adhesive layer formed between the second substrate and the light emitting structure, in which case the second substrate and the light emitting structure may be bonded by thermocompression bonding.

In addition, an uneven portion may be formed in the conductive adhesive layer to reduce the bonding area between the light emitting structure and the second substrate, and the conductive adhesive layer may be formed on the second substrate and the light emitting structure, and then bonded to each other.

The second substrate may be removed by polishing or etching, and the second substrate may form a separation pattern surrounding the heat dissipation pattern and having a depth of at least the depth of the heat dissipation pattern. This allows the separate substrate cutting process to be omitted.

 Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

<First Embodiment>

3A is a cross-sectional view of a vertical structure light emitting diode according to a first embodiment of the present invention.

In FIG. 3A, the vertical light emitting diode is formed in contact with the substrate 420, the light emitting structure 450 formed on the substrate 420, the first electrode 490 formed on the light emitting structure 450, and the light emitting structure. The heat dissipation conductive part 460 and the second electrode 470 formed under the substrate in contact with the heat dissipation conductive part 460.

In this embodiment, the substrate 420 is a silicon substrate as the conductive substrate. In general, a silicon substrate is used as the conductive substrate used in the vertical structure light emitting diode. The silicon substrate has a smaller strength than the sapphire substrate and the like and can be easily cut through a conventional cutting process.

However, substrates of other materials are also possible if not an insulating substrate such as sapphire, for example germanium, SiC, ZnO, diamond, GaAs and the like can also be used.

In the present exemplary embodiment, since the heat dissipation conductive portion 460 is formed between the light emitting structure and the lower electrode 470 to become a path between heat and electricity, the substrate 420 is not necessarily a conductive substrate.

The heat dissipation conductive part 460 may be formed by plating a metal such as copper or gold inside the substrate 420. The use of materials having excellent heat dissipation performance and electrical conductivity, such as copper or gold (Au), can further improve the performance and lifespan of light emitting diodes.

3B is a cross-sectional view of the vertical structure light emitting diode cut along the line A A of FIG. 3A.

As can be seen in FIG. 3B, the heat dissipation conductive part 460 is formed in the substrate 420 to serve as a path of heat and electricity between the light emitting structure 450 and the electrode 470. In the first embodiment, as shown in FIG. 3B, the heat dissipation conductive part 460 is integrally formed and has a quadrangular cross-sectional shape, but may be implemented in other forms in other embodiments.

The light emitting structure 450 is an essential part of the light emitting diode and is an area that actually emits light. The light emitting structure generally consists of a p-type cladding layer, an n-type cladding layer, and an active layer located therebetween.

In FIG. 3A, a conductive adhesive layer 440 is formed on the silicon substrate 420 in contact with the heat dissipation conductive portion. The conductive adhesive layer 440 may be formed of an adhesive pad, and the adhesive pad should be a conductive material having adhesiveness. The conductive material is preferably a metal bonding material using gold (Au), and Au-Sn, Sn, In, Au-Ag, Ag-Ge, Ag-Cu, and Pb-Sn may be used.

A reflective layer 430 may be further formed between the light emitting structure 450 and the conductive adhesive layer 440 to improve the effective luminance toward the upper surface of the light emitting structure 450. The reflective layer 430 may be made of a metal having high reflectance, and is generally formed of Au, Ni, Ag, Al, and an alloy thereof.

However, since the material constituting the conductive adhesive layer 440 is generally made of a metal or an alloy and has a relatively high reflectivity, a certain brightness improvement effect can be obtained without forming a separate reflective layer.

By forming a bulk heat-dissipating metal electrode having a relatively high thermal conductivity and electrical conductivity on a silicon substrate supporting the light emitting diode, the heat emission and electrical conductivity generated during the operation of the light emitting diode can be improved to improve the performance and lifetime of the light emitting diode device. It becomes possible.

4A to 4I illustrate step-by-step processes of the first method for manufacturing the vertical structure light emitting diode of FIG. 3A.

First, as shown in FIG. 4A, a silicon substrate 420 is provided, and as illustrated in FIG. 4B, dry etching of a connection path through which the heat dissipation conductive part 460 is to be formed at a position bonded to the light emitting structure 450 is performed. Form to a certain depth using.

Dry etching is a method of etching with gas or ions in a reduced pressure vessel as one of submicron processing techniques. Dry etching includes etching methods such as plasma, sputter, and ions, and has excellent processing accuracy compared to wet etching.

Thereafter, as illustrated in FIG. 4C, the inside of the connection passage is filled with a metal such as copper or gold using plating or other methods to form the heat dissipation conductive portion 460, and then the heat dissipation conductive portion 460 by polishing. ) And the height of the silicon substrate 420 are parallelized.

As shown in FIG. 4D, the conductive adhesive layer 442 is formed on the planarized silicon substrate 420 and the heat dissipation conductive part 460 using gold or other metals, and is bonded to the light emitting structure 450.

As can be seen in FIG. 4E, the conductive adhesive layer 444 is also formed on the light emitting structure 450 to be bonded to the conductive adhesive layer 442 formed on the silicon substrate 420. As such, the method of bonding the silicon substrate 520 to the light emitting structure 550 using the conductive adhesive layer 440 forms the conductive adhesive layers 442 and 444 on the conductive substrate 420 and the light emitting structure 450, respectively. It is preferable to join together afterwards.

However, in another embodiment, the conductive adhesive layer 442 is formed on the conductive substrate 420 in advance and then bonded to the light emitting structure 550, or the conductive adhesive layer 444 is first formed on the light emitting structure 450. After that, it may be performed in the form of bonding to the conductive substrate 420 again.

Bonding using the conductive adhesive layer 440 is performed using a thermocompression bonding method. As the light emitting structure forming substrate 410, a sapphire substrate or a GaAs substrate is generally used.

Thereafter, as shown in FIG. 4F, the two substrates are bonded to each other, and the back surface of the silicon substrate 420 is processed until the heat dissipation conductive portion 460 is exposed through a process, and the heat dissipation conductive portion is exposed. When 460 is exposed, as shown in FIG. 4G, a metal electrode 470 is formed to contact the heat dissipation conductive part 460.

After the metal electrode 470 is formed, the light emitting structure forming substrate 410 of sapphire or GaAs material is removed from the bonded two substrates 410 and 420 using a laser, polishing, or etching, as shown in FIG. 4H. .

In the case of sapphire substrate, a removal method using a laser is preferred, since the sapphire substrate has a large mechanical strength, which is difficult to remove by mechanical polishing.

In order to remove the sapphire substrate 410 by using a laser, as shown in FIG. 4H, the laser beam is irradiated onto the sapphire substrate 410. The laser beam penetrates the sapphire substrate 410 to emit light in contact with the sapphire substrate 410. A portion of the structure 450 is melted so that the sapphire substrate 410 is easily separated from the light emitting structure 450.

Finally, as shown in FIG. 4I, the electrode 490 is formed on the light emitting structure, and the silicon substrate 420 to which the light emitting diode structure is transitioned in FIG. 4J is cut to an element size. Cutting of the substrate 420 in FIG. 4J is performed by a diamond wheel w.

The vertical structured light emitting diode manufactured by the above method receives heat generated from the light emitting diode through the heat radiating conductive portion 460 due to the high thermal conductivity of the bulk heat dissipating conductive portion 460 bonded to the light emitting structure 450. It can be released smoothly. The high electrical conductivity of the heat dissipation conductive portion 460 facilitates the flow of current so that the light emitting diode can generate brighter light.

5A to 5I illustrate step-by-step processes of the second method for manufacturing the vertical structure light emitting diode of FIG. 3A.

In the first method, the substrate was cut with a diamond wheel to separate the light emitting diode elements. In general, since the conductive substrate is a silicon substrate having a smaller strength than that of the sapphire substrate, it can be easily cut through a conventional process.

However, the cutting of the vertical LED device using the diamond wheel w requires a large distance between the devices due to the thickness of the diamond wheel and the loss of the substrate when cutting the substrate. For this reason, the number of devices that can be fabricated on one substrate is reduced, thereby reducing the productivity of the light emitting diode.

In manufacturing a light emitting diode, the cost and productivity of the device are greatly influenced by the number of devices that can be formed within a limited area of the substrate. In order to increase the number of devices per substrate in the state where the area or size of the device is determined by the design considering the operation characteristics of the light emitting diode, there is only a method of narrowing the distance between the devices as much as possible.

In this case, the distance between the devices is determined in consideration of the cutting of the substrate performed after all the manufacturing processes are completed, the cutting of the substrate by the diamond wheel is a considerable distance between the devices due to the thickness of the diamond wheel and the loss of the substrate consumed during the cutting process This limits the number of light emitting diodes that can be produced per unit substrate.

The second method provides a vertical light emitting diode manufacturing method capable of maximizing the number of vertical light emitting diodes that can be manufactured per unit substrate by minimizing the distance between elements formed on the substrate.

The second method is the same as most of the first method. Therefore, description is abbreviate | omitted about a common process and it compares and demonstrates about another process.

Comparing FIG. 5B and FIG. 4B, it can be seen in FIG. 5B that a separation pattern is formed between the heat dissipation patterns of FIG. 4B. The separation pattern should surround the heat radiation pattern and have a depth of at least the depth of the heat radiation pattern.

Comparing FIG. 5F and FIG. 4F, in FIG. 5F, it can be seen that each LED device is completely separated from the light emitting structure formation substrate 410. When the silicon substrate 420 is removed to form an electrode in the heat dissipation conductive portion 460, since the separation pattern is formed deeper than the heat dissipation pattern, the silicon substrate 420 is already separated before the heat dissipation conductive portion 460 is exposed. will be.

5H and 4H, a fixing tape 480 is attached to the heat dissipation conductive portion 460 and the electrode 470 on the silicon substrate 420 in FIG. 5H. The UV tape or dicing tape is attached to the back surface of the silicon substrate 420 to fix the devices, and then the laser, polishing, or etching is used to remove the light emitting structure forming substrate of the sapphire or GaAs material.

As shown in FIG. 5H, when the sapphire or GaAs substrate is removed, the individual LEDs are spontaneously cut and supported only by the fixing tape 480.

The electrode 490 is formed on the light emitting diode structure 450 in FIG. 5I, and the device is separated from the fixing tape 480 in FIG. 5J.

4J and 5J, in FIG. 4J, the substrate 420 needs to be cut using the diamond wheel w. However, in 5j, the diode is separated from the fixing tape 480. It is not necessary.

According to the second method, since dry etching is used to cut the substrate on which the vertical structure light emitting diode element is formed, the distance between the diode elements can be reduced to within several micrometers. Therefore, it is possible to integrate and produce a larger number of vertical light emitting diode elements per unit area of the substrate.

 In addition, a fine crack occurs due to an impact applied to the substrate during the cutting process by the diamond wheel, which causes damage to the device and is a major cause of deterioration of the reliability and performance of the device. Since the cutting process using a separate diamond wheel can be omitted, not only can the production cost be lowered, but also fine cracking or damage caused by cutting by the diamond wheel can be prevented. As a result, the reliability and performance of the vertical light emitting diode device can be further improved.

Second Embodiment

6 is a cross-sectional view of a vertical structure light emitting diode according to a second embodiment of the present invention.

In FIG. 6, it can be seen that the uneven portion 444 is formed in the conductive adhesive layer 440 bonding the light emitting structure 450 and the silicon substrate 420 formed therein.

In general, the method of adhering the light emitting structure 450 using the conductive adhesive layer 440 deposits gold on the entire surface of the light emitting structure 450 and bonds the silicon wafer on which the gold is deposited. Bonding using gold is generally performed at 300 degrees Celsius or more, and a sapphire substrate or a GaAs substrate on which the light emitting structure 450 is formed is bonded to a silicon substrate to manufacture a light emitting diode.

At this time, stress is generated in the pair of substrates due to the difference in thermal expansion coefficient of the two substrates bonded. This stress causes the pair of substrates to bend or break.

For this reason, when the aperture size or the bonding area of the wafer increases, the pressure applied per unit area to be bonded decreases, and thus sufficient bonding force cannot be obtained. If the bonding strength is weak, the device may not be able to withstand the impact when cutting the device, and if the partial bonding is made, the operation characteristics may be degraded during long time operation. In order to increase the bonding force at the limited pressure of the equipment, the temperature must be increased, and the process at a high temperature is a major cause of deterioration of the light emitting property of the device.

In the second embodiment, a method of increasing the pressure applied per unit area in the bonding process is used as a method for obtaining high bonding force at a low temperature. When using this method, instead of reducing the bonding area by patterning the conductive adhesive pad of the light emitting structure 450 to be bonded to the silicon substrate 420, by increasing the pressure applied to the bonding surface and having a higher bonding strength and reliable LED device Can be produced.

In the second embodiment, a method of patterning the conductive adhesive layer 444 formed on the light emitting structure is used to generate the uneven portion of the conductive adhesive layer 440. However, in another embodiment, a pattern may be formed on the conductive adhesive layer 442 on the silicon substrate 420, or a method of forming the conductive adhesive layer 442 on the uneven portion formed by etching the silicon substrate may be used.

In the case of metal film bonding using heat and pressure, the bonding conditions are inversely related to each other between heat and pressure. The pressure applied per unit area must be increased to achieve proper bonding at low temperatures. The pressure per unit area can be increased by patterning the metal film forming the conductive adhesive layer to reduce the bonding area. This results in high bond strength across the wafer even at low temperatures.

Third Embodiment

7A is a cross-sectional view of a vertical structure light emitting diode according to a third embodiment of the present invention.

The vertical structure light emitting diode shown in FIG. 7A is mostly the same as the vertical structure light emitting diode shown in FIG. 3A, except that the shape of the heat dissipation conductive part 460 is different.

3A and 7A, the heat dissipation conductive portion 460 of FIG. 3A is integrally formed, but the heat dissipation conductive portion 460 of FIG. 7A may be formed in plural numbers separated from each other.

FIG. 7B is a cross-sectional view of the vertical structure light emitting diode cut along the line B B of FIG. 7A.

The heat dissipation conductive parts 460 illustrated in FIG. 7B are formed in plural numbers separated from each other and have a porous shape as a whole. Comparing FIG. 7B with FIG. 3B of the first embodiment, in FIG. 3B, the heat dissipation conductive portion 460 is integrally formed and has a quadrangular cross section. In FIG. 7B, the heat dissipation conductive portion 460 has a porous shape. It can be seen that it has a circular cross section.

Although preferred shapes of the heat dissipation conductive portion 460 are disclosed in the first and third embodiments, respectively, those skilled in the art may employ other various shapes according to their selection of the heat dissipation conductive portion 460.

8A to 8J illustrate step-by-step processes of the method of manufacturing the vertical structure light emitting diode of FIG. 7A.

The manufacturing method of the vertical light emitting diode of the third embodiment is mostly the same as the manufacturing method of the vertical light emitting diode of the first embodiment. However, there is a difference only in the shape of the heat radiation pattern formed on the second substrate 420.

Comparing FIG. 8B and FIG. 4B, although the heat dissipation pattern is integrally formed in FIG. 4B, it can be seen that in FIG. 8B, a plurality of heat dissipation patterns are formed.

The present invention allows the heat generated from the light emitting diode to be smoothly discharged to the outside through the metal electrode due to the high thermal conductivity of the bulk metal electrode combined with the light emitting diode. The high electrical conductivity of the metal electrode facilitates the flow of current, allowing the light emitting diode to generate brighter light.

By releasing heat generated from the light emitting diodes smoothly, the performance degradation of the device due to heat can be reduced and the life of the device can be extended. In addition, the electrical conductivity can improve the performance of the device, such as the brightness of light.

In addition, by forming a pattern for separation of the device on the substrate it is possible to omit a separate cutting process, thereby improving the productivity of the light emitting diode.

In addition, by forming a conductive bonding pad between the light emitting structure and the substrate, it is possible to obtain a higher bonding force as compared with conventional bonding, thereby increasing the yield of the light emitting diode. In addition, by performing the bonding process at a low temperature it is possible to reduce the damage to the device.

Although the invention has been described in terms of some preferred embodiments, the scope of the invention should not be limited thereby, but should be construed as modifications or improvements of the embodiments supported by the claims.

Claims (24)

Board; A light emitting structure formed on the substrate; A first electrode formed on the light emitting structure; A heat dissipation conductive part in contact with the light emitting structure and formed in the substrate; And And a second electrode in contact with the heat dissipation conductive portion. The method of claim 1, And the heat dissipation conductive portion is formed through the substrate. The method of claim 2, The heat dissipation conductive part is a vertical structure light emitting diode, characterized in that formed of a metal. The method of claim 3, wherein And the metal is copper or gold. The method of claim 1, And the light emitting structure further comprises a reflective layer reflecting light generated from the active layer. The method of claim 1, The substrate is a vertical structure light emitting diode, characterized in that the conductive substrate. The method of claim 6, The conductive substrate is a vertical structure light emitting diode, characterized in that the silicon substrate. The method of claim 1, And a conductive adhesive layer formed between the substrate and the light emitting structure. The method of claim 8, The conductive adhesive layer is a vertical structure light emitting diode, characterized in that formed of a bonding material containing gold. The method of claim 9, The conductive adhesive layer is a vertical structure light emitting diode, characterized in that the uneven portion for reducing the bonding area between the light emitting structure and the substrate is formed. The method of claim 2, The plurality of heat dissipation conductive parts are formed in a plurality, and the vertical structure light emitting diode, characterized in that separated from each other. (a) forming a light emitting structure on the first substrate; (b) forming a heat dissipation pattern having a predetermined depth in an area on the second substrate in contact with the light emitting structures when the second substrate is bonded to the light emitting structures; (c) filling the heat radiation pattern with a heat radiation conductive material to form a heat radiation conductive portion; (d) bonding the heat dissipation conductive part to the light emitting structure; (e) removing the surface on the second substrate facing the bonding surface until the heat dissipation conductive portion is exposed; (f) forming an electrode on the exposed heat-radiating conductive surface; (f) removing the first substrate; And (g) forming an electrode on the light emitting structure from which the first substrate is removed. The method of claim 12, The heat dissipation conductive part is a vertical structure light emitting diode manufacturing method, characterized in that formed of a metal. The method of claim 13, The metal is copper or gold vertical structure light emitting diode manufacturing method characterized in that. The method of claim 14, The heat dissipation conductive portion is a vertical structure light emitting diode manufacturing method, characterized in that formed using the plating. The method of claim 12, The heat radiation pattern on the second substrate is a vertical structure light emitting diode manufacturing method, characterized in that formed by dry etching. The method of claim 12, And the second substrate and the light emitting structure are bonded by a conductive adhesive layer formed between the second substrate and the light emitting structure. The method of claim 17, The conductive adhesive layer is a vertical structure light emitting diode manufacturing method, characterized in that formed of a bonding material containing gold. The method of claim 18, And the second substrate and the light emitting structure are bonded by thermocompression bonding. The method of claim 19, And forming a concave-convex portion in the conductive adhesive layer to reduce a bonding area between the light emitting structure and the second substrate. The method of claim 18, The conductive adhesive layer is formed on each of the second substrate and the light emitting structure and then bonded to each other, characterized in that the manufacturing method of the vertical structure. The method of claim 12, The plurality of heat dissipation patterns are formed, and the vertical structure light emitting diode manufacturing method, characterized in that separated from each other. The method of claim 12, And forming a separation pattern surrounding the heat dissipation pattern on the second substrate and having a depth of at least the depth of the heat dissipation pattern. The method of claim 12, And the second substrate is removed by polishing or etching.

Images