KR100576402B1 - 막 처리 방법 및 막 처리 장치 - Google Patents

막 처리 방법 및 막 처리 장치 Download PDF

Info

Publication number
KR100576402B1
KR100576402B1 KR1020030096184A KR20030096184A KR100576402B1 KR 100576402 B1 KR100576402 B1 KR 100576402B1 KR 1020030096184 A KR1020030096184 A KR 1020030096184A KR 20030096184 A KR20030096184 A KR 20030096184A KR 100576402 B1 KR100576402 B1 KR 100576402B1
Authority
KR
South Korea
Prior art keywords
film
electron beam
end point
wafer
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020030096184A
Other languages
English (en)
Korean (ko)
Other versions
KR20040058053A (ko
Inventor
오니시다다시
하마마나부
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20040058053A publication Critical patent/KR20040058053A/ko
Application granted granted Critical
Publication of KR100576402B1 publication Critical patent/KR100576402B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2482—Optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3156—Curing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Formation Of Insulating Films (AREA)
KR1020030096184A 2002-12-24 2003-12-24 막 처리 방법 및 막 처리 장치 Expired - Fee Related KR100576402B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002371587A JP2004207314A (ja) 2002-12-24 2002-12-24 膜改質の終点検出方法、その終点検出装置及び電子ビーム処理装置
JPJP-P-2002-00371587 2002-12-24

Publications (2)

Publication Number Publication Date
KR20040058053A KR20040058053A (ko) 2004-07-03
KR100576402B1 true KR100576402B1 (ko) 2006-05-03

Family

ID=32677199

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030096184A Expired - Fee Related KR100576402B1 (ko) 2002-12-24 2003-12-24 막 처리 방법 및 막 처리 장치

Country Status (5)

Country Link
US (2) US6903800B2 (https=)
JP (1) JP2004207314A (https=)
KR (1) KR100576402B1 (https=)
CN (1) CN100511619C (https=)
TW (1) TW200414333A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1517184A1 (en) * 2003-09-18 2005-03-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007059617A (ja) * 2005-08-24 2007-03-08 Toshiba Corp 半導体装置の製造方法
WO2013031509A1 (en) 2011-08-26 2013-03-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, lighting device, and method for manufacturing the light-emitting device
US9472776B2 (en) 2011-10-14 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sealed structure including welded glass frits
US8951384B2 (en) * 2011-10-20 2015-02-10 Applied Materials, Inc. Electron beam plasma source with segmented beam dump for uniform plasma generation
US20130098552A1 (en) * 2011-10-20 2013-04-25 Applied Materials, Inc. E-beam plasma source with profiled e-beam extraction grid for uniform plasma generation
JP2013101923A (ja) 2011-10-21 2013-05-23 Semiconductor Energy Lab Co Ltd 分散組成物の加熱方法、及びガラスパターンの形成方法
CN103236515B (zh) * 2013-04-07 2015-11-25 力柏时代锂动力科技（北京）有限公司 极片制造设备和极片制造方法
US11222783B2 (en) * 2017-09-19 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Using cumulative heat amount data to qualify hot plate used for postexposure baking

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06103687B2 (ja) * 1988-08-12 1994-12-14 大日本スクリーン製造株式会社 回転式表面処理方法および回転式表面処理における処理終点検出方法、ならびに回転式表面処理装置
JPH0316125A (ja) * 1989-03-30 1991-01-24 Mitsubishi Electric Corp 半導体装置の製造方法
US5167760A (en) * 1989-11-14 1992-12-01 Intel Corporation Etchback process for tungsten contact/via filling
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
JPH04355917A (ja) * 1990-10-12 1992-12-09 Seiko Epson Corp 半導体装置の製造装置
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
US5442439A (en) * 1993-04-21 1995-08-15 Kaiser Optical Systems, Inc. Spectrograph with multiplexing of different wavelength regions onto a single opto-electric detector array
US5414267A (en) * 1993-05-26 1995-05-09 American International Technologies, Inc. Electron beam array for surface treatment
US5570175A (en) * 1994-03-07 1996-10-29 Ceram Optec Industries Inc. Method for determination of degree of molecular dissociation in plasma using combined electrostatic measurement and emission spectroscopy
US5485091A (en) * 1995-05-12 1996-01-16 International Business Machines Corporation Contactless electrical thin oxide measurements
JP3197484B2 (ja) * 1995-05-31 2001-08-13 シャープ株式会社 フォトマスク及びその製造方法
US7026634B2 (en) * 2001-06-28 2006-04-11 E-Beam & Light, Inc. Method and apparatus for forming optical materials and devices

Also Published As

Publication number Publication date
CN100511619C (zh) 2009-07-08
CN1510720A (zh) 2004-07-07
TW200414333A (en) 2004-08-01
TWI320199B (https=) 2010-02-01
US6903800B2 (en) 2005-06-07
US20040131351A1 (en) 2004-07-08
JP2004207314A (ja) 2004-07-22
KR20040058053A (ko) 2004-07-03
US20050196712A1 (en) 2005-09-08

Similar Documents

Publication Publication Date Title
US6750976B2 (en) Device for manufacturing semiconductor device and method of manufacturing the same
KR100576402B1 (ko) 막 처리 방법 및 막 처리 장치
US20020009592A1 (en) Evaluating method of hydrophobic process, forming method of resist pattern, and forming system of resist pattern
US7738976B2 (en) Monitoring method of processing state and processing unit
US20080236747A1 (en) Gas analyzing apparatus and substrate processing system
US20250067556A1 (en) Method of measuring film thickness, and substrate processing apparatus
US5284547A (en) Plasma-process system with batch scheme
JP2004028787A (ja) 全反射蛍光ｘ線分析方法、全反射蛍光ｘ線分析前処理装置及び全反射蛍光ｘ線分析装置
US7195936B2 (en) Thin film processing method and system
US12567570B2 (en) Apparatus for treating substrate and method for treating substrate
JP3525674B2 (ja) 仕事関数またはイオン化ポテンシャル測定装置およびその方法
US6781126B2 (en) Auger-based thin film metrology
JP2010027787A (ja) 終点検出方法、基板処理方法、基板処理装置および基板処理システム
Shannon et al. Spatially resolved fluorine actinometry
KR102447267B1 (ko) 오염입자의 실시간 복합 측정이 가능한 수직형 플라즈마 처리 장치
KR102845992B1 (ko) 반도체 프로세싱 챔버들 내의 원자 산소 검출
KR20250137832A (ko) 플라즈마 처리 모듈 및 이를 포함하는 기판 본딩 시스템
WO2023132268A1 (ja) 判定方法及び基板処理装置
CN100380593C (zh) 薄膜处理方法和薄膜处理系统
JPH10253557A (ja) 電子線分析方法及びその分析装置
JPH0545311A (ja) Ｘ線照射装置
KR20190075376A (ko) 박막두께 측정장치 및 이를 갖는 박막 제조용 증착장치 및, 박막두께 측정방법
JP2015038451A (ja) 分析装置、分析方法及び分析制御プログラム

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20090424

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20100427

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20100427

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000