KR100569112B1 - Low firing ceramic composition for microwave components and manufacture method therefor - Google Patents

Abstract

≤38) 및 안정된 온도계수 및 조성에 따라 다양한 온도보상 특성(

= -74∼+16 ppm/℃)의 우수한 고주파 유전특성을 보이는 Bi(Nb_1-6x/5/₅Mo_x)O₄ (0.1≤x≤0.5)로 표시되는 조성물과, CuO로 이루어졌으며, Ag이나 Cu 또는 이들의 합금 또는 Ag/Pd 합금을 내부전극으로 사용할 수 있어 각종 고주파용 소자 즉, 적층칩 캐패시터, 적층칩 필터, 적층칩 캐패시터/인덕터 복합소자 및 모듈, 저온소결 기판, 공진기 또는 필터 및 세라믹 안테나용 유전체 재료로 사용될 수 있는 저온소결 저손실 마이크로파 유전체 세라믹스 조성물 및 그 제조방법에 관한 것이다. 한편, 본 발명에 따른 저온소결 저손실 마이크로파 유전체 세라믹스 조성물 및 그 제조방법은, 기존의 마이크로파 유전체 세라믹스 조성물에 비하여 부피가 작고 넓은 대역폭을 가지는 안테나를 제작할 수 있게 하는 이점과, 저온소성이 가능하여 부품의 제조단가를 낮출 수 있게 하는 이점을 제공한다.The present invention has a much lower sintering temperature (700-1100 ° C.) and higher quality factor (Q × f = 754 ~ 4642 GHz) and dielectric constant (27 ≦) than conventional microwave ceramics.

≤38) and various temperature compensation characteristics according to stable temperature coefficient and composition (

Been made to -74~ + = composition, CuO represented by _{Bi (Nb 1-6x / 5/5} Mo x) O 4 (0.1≤x≤0.5) with a good high-frequency properties of the dielectric 16 ppm / ℃), Ag, Cu, or alloys thereof, or Ag / Pd alloys can be used as internal electrodes for various high-frequency devices, ie multilayer chip capacitors, multilayer chip filters, multilayer chip capacitors / inductor composites and modules, low temperature sintered substrates, resonators or filters And a low temperature sintered low loss microwave dielectric ceramic composition which can be used as a dielectric material for ceramic antennas and a method of manufacturing the same. On the other hand, the low-temperature sintered low-loss microwave dielectric ceramic composition and the method for manufacturing the same according to the present invention, compared to the conventional microwave dielectric ceramic composition has the advantage of manufacturing an antenna having a small volume and a wide bandwidth, and low-temperature firing is possible It provides the advantage of lowering the manufacturing cost.

Description

Low firing ceramic composition for microwave components and manufacture method therefor}

1 is a process flow diagram of a method for producing a microwave dielectric ceramic composition according to the present invention.

2 is a graph showing the change in dielectric constant according to the content of MoO ₃ in the microwave dielectric ceramic composition prepared according to the embodiment of the present invention.

3 is a graph showing the change of the quality factor according to the content of MoO ₃ in the microwave dielectric ceramic composition prepared according to the embodiment of the present invention.

4 is a graph showing a change in resonant frequency temperature coefficient according to the content of MoO ₃ in the microwave dielectric ceramic composition prepared according to the embodiment of the present invention.

5 is a view of an embodiment of a monopole antenna fabricated using the microwave dielectric ceramic composition according to the present invention.

Figure 6 is a graph showing the return loss characteristics of the ceramic monopole antenna produced using the microwave dielectric ceramic composition according to the present invention.

7A and 7B are graphs illustrating x-z and x-y plane radiation patterns of ceramic monopole antennas fabricated using the dielectric ceramic composition according to the present invention, respectively.

≤38) 및 안정한 온도계수 및 조성에 따라 다양한 온도보상 특성(

= -74∼+16 ppm/℃)의 우수한 고주파 유전특성을 보이는 Bi(Nb_1-6x/5/₅Mo_x )O₄ (0.1≤x≤0.5)로 표시되는 조성물과, CuO로 이루어졌으며, Ag이나 Cu 또는 이들의 합금 또는 Ag/Pd 합금을 내부전극으로 사용할 수 있어 각종 고주파용 소자 즉, 적층칩 캐패시터, 적층칩 필터, 적층칩 캐패시터/인덕터 복합소자 및 모듈, 저온소결 기판, 공진기 또는 필터 및 세라믹 안테나용 유전체 재료로 사용될 수 있는 저온소결 저손실 마이크로파 유전체 세라믹스 조성물 및 그 제조방법에 관한 것이다. The present invention relates to a low-temperature sintered low loss high frequency dielectric ceramic composition and a method for manufacturing the same. ) And dielectric constant (27≤

≤38) and various temperature compensation characteristics according to stable temperature coefficient and composition

Been made to -74~ + = composition, CuO represented by _{Bi (Nb 1-6x / 5/5} Mo x) O 4 (0.1≤x≤0.5) with a good high-frequency properties of the dielectric 16 ppm / ℃), Ag, Cu, or alloys thereof, or Ag / Pd alloys can be used as internal electrodes for various high-frequency devices, ie multilayer chip capacitors, multilayer chip filters, multilayer chip capacitors / inductor composites and modules, low temperature sintered substrates, resonators or filters And a low temperature sintered low loss microwave dielectric ceramic composition which can be used as a dielectric material for ceramic antennas and a method of manufacturing the same.

On the other hand, the present invention makes it possible to manufacture an antenna having a smaller volume and a wider bandwidth than the conventional microwave dielectric ceramic composition, and low-temperature sintered low loss microwave dielectric ceramic composition and low temperature firing is possible to reduce the manufacturing cost of the component and its It relates to a manufacturing method.

)와 품질계수(Q) 그리고 안정(stable)하고도 조절가능한(tunable) 공진주파수의 온도계수(

)가 요구된다. 지금까지 알려진 대표적인 마이크로파 유전체 조성은 (Zr,Sn)TiO₄계, BaO-TiO₂계, (Mg,Ca)TiO₃계, Ba-페롭스카이트계로서 Ba(Zn _1/3Ta_2/3)O₃, Ba(Mg_1/3Ta_2/3)O₃, Ba(Zn_1/3Nb_2/3)O₃ 등이다. 그러나 이들 조성들은 대부분 1,300∼1,500℃의 고온에서 소결 가능하거나, 상합성이 용이치 않거나, 유전상수가 낮거나 또는 공진주파수의 온도 안정성이 좋지 못하다. 더욱이 최근들어 휴대용 정보통신기기의 발달로 적층 칩형 고주파 소자(multilayer chip high frequency devices)나 저온동시소결 세라믹스(low temperature co-firing ceramics : LTCC)에 의한 각종 기판 및 복합칩 모듈(multi-chip module : MCM)의 개발에 따른 저온소결 고성능 고주파용 세라믹스의 연구 및 개발이 이루어지고 있으나, 이들 중 대부분은 저온소결시 치밀화가 불충분하거나, 소결체의 첨가에 따른 유전율의 저하, 품질계수의 저하 및 온도계수의 변화 등 고주파 특성의 성능이 매우 크게 저하되는 것이 문제점이 되고 있다. 또한 고주파 전달 손실이 적은 은(Ag)이나 동(Cu) 도체와 동시소결(cofiring)이 가능한 저온 소결용 마이크로파 유전체 세라믹은 매우 드물다.Recently, with the rapid development of mobile communication and satellite communication, the demand for microwave dielectric ceramics as a material of high frequency integrated circuit or dielectric resonator has been greatly increased. The main characteristic of dielectric ceramics used for high frequency is high dielectric constant (

), Quality factor (Q) and stable and tunable resonant frequency

) Is required. Representative microwave dielectric compositions known to date include (Zr, Sn) TiO ₄ based, BaO-TiO ₂ based, (Mg, Ca) TiO ₃ based, Ba-perovskite based Ba (Zn _1/3 Ta _2/3 ) O ₃ , Ba (Mg _1/3 Ta _2/3 ) O ₃ , Ba (Zn _1/3 Nb _2/3 ) O _3, and the like. However, most of these compositions are capable of sintering at high temperatures of 1,300 to 1,500 ° C., are not easily compatible with each other, have low dielectric constants, or have poor temperature stability at resonance frequencies. Furthermore, with the development of portable information and communication devices, various substrates and multi-chip modules have been developed by multilayer chip high frequency devices or low temperature co-firing ceramics (LTCC). The research and development of low-temperature sintered high-performance high-frequency ceramics with the development of MCM) has been conducted, but most of them have insufficient densification during low-temperature sintering, or a decrease in dielectric constant, quality coefficient and temperature coefficient due to the addition of a sintered body. The problem is that the performance of high frequency characteristics such as change is greatly reduced. In addition, microwave dielectric ceramics for low temperature sintering capable of cofiring with silver (Ag) or copper (Cu) conductors with low high frequency transmission loss are very rare.

Accordingly, the technical problem to be achieved by the present invention is low temperature sintered low loss microwave dielectric ceramics having excellent microwave dielectric properties of various temperature compensation characteristics according to high dielectric constant and quality coefficient, stable temperature coefficient and composition while being sintered at very low temperature. It is an object to provide a composition and a method for producing the same.

Another technical problem to be solved by the present invention is that Ag, Cu, or alloys thereof or Ag / Pd alloys can be used as internal electrodes, and thus, various high-frequency devices, that is, multilayer chip capacitors, multilayer chip filters, and multilayer chip capacitor / inductor composite devices. And low temperature sintered low loss microwave dielectric ceramic compositions and methods for manufacturing the same, which can be used as low temperature sintered substrates, resonators and filters or ceramic antennas.

Low temperature co-fired low-loss microwave dielectric ceramic composition according to the invention in order to attain the object, in a microwave dielectric ceramic composition, by the formula _{Bi (Nb 1-6x / 5/5} Mo x) O 4 (0.1≤x≤0.5) It is characterized by including the composition shown and CuO.

In a preferred embodiment of the present invention, the sintering temperature of the composition is 700 to 1100 ℃.

In a preferred embodiment of the present invention, in the microwave dielectric ceramic composition, the total content of CuO is 0.1 parts by weight based on 100 parts by weight of the microwave dielectric ceramic composition.

Method of manufacturing a low-temperature low-loss microwave sintering Dielectric ceramics according to the present invention for achieving the above object, the composition, the composition represented by the formula _{Bi (Nb 1-6x / 5/5} Mo x) O 4 (0.1≤x≤0.5) And a method for producing a microwave dielectric ceramic composition comprising CuO, comprising: a weighing step of weighing Bi ₂ O ₃ , Nb ₂ O ₅ , MoO ₃ , CuO powder, which are raw powders constituting the composition, respectively; A first mixing step of primarily mixing the weighed raw powders; After the first mixing step, the drying step of drying the mixed mixture; Calcination step of calcining the dried result; A secondary mixing step of adding methanol or distilled water to the calcined ceramic composition obtained by the calcining step and mixing the mixture secondly; A dry solidification step of drying and solidifying the resultant mixture mixed in the second mixing step; A molding step of forming the resultant by adding and mixing a predetermined binder to the resultant which has undergone the dry solidification step; A sintering step of sintering a molding formed through the molding step; And polishing the dielectric ceramic composition resulting from the sintering step into a predetermined shape.

In a preferred embodiment of the method of the present invention, in the first mixing step, a grinding means such as a ball mill and zirconia balls for mixing dispersibility are added, methanol or distilled water is added to the mixture, and the mixing time is 24 hours. To 48 hours, and the amount of methanol or distilled water added is 200 to 300 parts by weight based on 100 parts by weight of the total weight of the mixture consisting of Bi ₂ O ₃ , Nb ₂ O ₅ , MoO ₃ , and CuO powders; In the second mixing step, the content of methanol or distilled water is 200 to 300 parts by weight based on 100 parts by weight of the total weight, the second mixing time is 24 to 48 hours.

In a preferred embodiment of the method of the present invention, the drying temperature in the drying step is 80 ~ 120 ℃, the calcination temperature in the calcination step is 650 ~ 900 ℃, the temperature of the dry solidification step is 80 ~ 120 ℃ , The sintering temperature in the sintering step is 700 ~ 1250 ℃.

In a preferred embodiment of the method of the present invention, the binder in the forming step is polyvinyl alcohol or polyethylene glycol, the content of the binder is 3 to 6 parts by weight based on 100 parts by weight of the solid content of the complete solidification step.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of a low-temperature sintered low loss microwave dielectric ceramic composition and a method for manufacturing the same according to the present invention. In the following description of the present invention, when it is determined that detailed descriptions of related well-known technologies or configurations may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, terms to be described below are terms defined in consideration of functions in the present invention, which may vary according to the intention or custom of a user or an operator. Therefore, the definition should be made based on the contents throughout the specification.

First, the present invention provides a composition represented by the following Chemical Formula 1, a microwave dielectric ceramic composition capable of low-temperature sintering (700 to 1100 ° C.) made of CuO, and a multilayer dielectric component using the same.

[Formula 1]

_{Bi (Nb 1-6x / 5/5} Mo x) O 4 by + 0.1wt.% CuO

In Chemical Formula 1, 0.1 ≦ x ≦ 0.5.

If the value of x is less than 0.1 in Formula 1, oxygen vacancies are generated due to the volatilization of bismuth, indicating a P-type semiconductivity. There is a problem that this sudden decrease. The composition of Formula 1 has a structure in which niobium (Nb) is partially substituted with molybdenum (Mo), and thus, when Nb is partially substituted with Mo, the temperature coefficient characteristics of dielectric constant and resonance frequency are adjusted within a preferable range.

In the microwave dielectric ceramic composition of the present invention, the total content of CuO is 0.1 parts by weight based on 100 parts by weight of the composition represented by Formula 1.

When the content of CuO is less than 0.1 part by weight, the sinterability is bad, which is not preferable. On the other hand, when it exceeds 0.1 parts by weight, the quality factor is greatly improved, which is not preferable as an antenna material.

In one embodiment of the microwave dielectric ceramic composition of the present invention according to Formula 1, the change in dielectric constant according to the content of MoO ₃ in Figure 2, the change in quality coefficient according to the content of MoO ₃ in Figure 3, The change of the resonance frequency temperature coefficient according to the content of MoO ₃ is shown in FIG. An example of a monopole antenna fabricated using the microwave dielectric ceramic composition according to the present invention is shown by reference to FIG. 5.

Hereinafter, a method of manufacturing the microwave dielectric ceramic composition of the present invention will be described with reference to FIG. 1.

First, Bi ₂ O ₃ , Nb ₂ O ₅ , MoO ₃ , and CuO powders, which are starting materials for forming a composition represented by Chemical Formula 1, are weighed, and these raw powders are sufficiently mixed (S10) (S20). In the mixing step of S20, a grinding means such as a ball mill is used.

The primary mixing step (S20) using a ball mill is performed by adding methanol to the mixture and adding zirconia balls to improve mixing dispersibility. And mixing time in a ball mill is 24 to 48 hours, and especially about 24 hours are preferable. The content of the added methanol is 200 to 300 parts by weight based on 100 parts by weight of the total weight of the mixture consisting of Bi ₂ O ₃ , Nb ₂ O ₅ , MoO ₃ , CuO powder.

As described above, after the wet mixing step S20 in the ball mill is finished, the mixed mixture is dried (S30). At this time, drying temperature is 80-120 degreeC and 100 degreeC is preferable, and drying time is 12-24 hours and it is preferable to carry out about 24 hours. Subsequently, the dried resultant is calcined at 650 to 900 ° C. for about 4 hours (S40).

Methanol or distilled water is added to the calcined ceramic composition obtained by the calcination step (S40), and the zirconia ball is added to a mixing means such as a ball mill and subjected to a second mixing step (S50). Herein, the content of methanol is preferably 200 to 300 parts by weight based on 100 parts by weight of the total weight of the ceramic composition as in the first wet mixing process. And the second mixing time in the ball mill is preferably 24 to 48 hours, particularly about 24 hours.

The resultant mixture of the secondary mixing step (S50) is completed is dried and solidified at 80 to 120 ℃ for 12 to 24 hours (S60). Subsequently, the binder is added and mixed to the resultant to form the resultant (S70). The binder serves to provide a bonding force between the powders during molding, specific examples thereof include polyvinyl alcohol, polyethylene glycol, etc., the content of the binder is 3 ~ 3 based on 100 parts by weight of the solid content of the complete solidification step (S60) 6 parts by weight.

The molding formed through the molding step (S70) is sintered at 700 to 1250 ° C (S80). Here, the sintering time is 2 to 4 hours, preferably about 4 hours.

Polishing the dielectric ceramic composition prepared as described above (S90). After polishing the composition, a desired sample is prepared by adjusting the size, and the dielectric constant, quality factor, resonant frequency temperature coefficient, etc. are obtained by using a sample post resonator method and an open cavity method. Measure physical properties.

Hereinafter, the present invention will be described in more detail with reference to the following examples. These examples are only for illustrating the present invention, and the protection scope of the present invention is not limited by these examples.

EXAMPLE

Each powder was weighed using Bi ₂ O ₃ , Nb ₂ O ₅ , MoO ₃ , CuO ceramic powder (all manufactured by CERAC, purity 99.9%) to have the composition shown in Table 1, and distilled water was added to the ball mill. Wet mixing for 24 h. The mixture was then dried at 100 ° C. for 24 hours and the dried mixture was calcined at 650-900 ° C. for 4 hours. Distilled water was added to the calcined ceramic composition, followed by wet milling again in a ball mill for 24 hours, followed by drying. 6 parts by weight of binder (PVA) was added to 100 parts by weight of the dried powder, followed by a pressure of 100 MPa / cm ² in a mold having a diameter of 15 mm. It was molded through a process of dry pressing. The molded specimens were heat treated at 550 ° C. for 2 hours for evaporation of organic substances present in the body and then sintered at an appropriate sintering temperature (700˜1250 ° C.) for 4 hours. The sintered specimens were processed so that the ratio of diameter to height was 2.3: 1 to make a resonator in TE ₀₁₁ mode.

The dielectric constant, quality coefficient, and temperature coefficient at the resonant frequency of the specimen prepared as described above were measured as follows, and the measurement results are shown in FIGS. 2 to 4.

)와 품질계수(Q×f₀)값을 측정하였고, 주파수의 온도계수(

) 값은 항온조를 이용하여 +20∼+80℃의 온도범위에서 측정하였다. 이 때 유전상수(

)는 하기 수학식 1을 , 품질계수(Q×f₀)는 하기 수학식 2를, 주파수의 온도계수(

)는 하기 수학식 3을 이용하여 각각 계산하였다.Using the parallel conductor plate method (Hakki-Coleman) and the open cavity method, the dielectric constants were obtained through a network analyzer.

) And the quality factor (Q × f ₀ ) were measured and the temperature coefficient of the frequency (

) Was measured in a temperature range of +20 ~ +80 ℃ using a thermostat. In this case, the dielectric constant (

) Represents Equation 1 below, and the quality factor (Q × f ₀ ) represents Equation 2 below,

) Was calculated using the following equation (3).

[Equation 1]

Where f ₀ is the resonant frequency, D is the diameter of the sample, and c is a constant.

[Equation 2]

는 대역폭(

),

는 삽입 손실(insertion loss)이다.In the above formula

Is the bandwidth (

),

Is an insertion loss.

[Equation 3]

The results of measuring the physical properties of the microwave ceramic dielectric composition using Equations 1 to 3 are shown in Table 1 below. In Table 1, Sample Nos. 1 to 28 show the measurement results of the physical properties of the above examples.

[Comparative Example]

Sample numbers * 1 to * 7 in the table were selected for the comparative example. In the sample of Comparative Example, except that MoO ₃ was not added, a microwave dielectric ceramic composition was prepared in the same manner as in the above-described embodiment of the present invention, and a microwave dielectric ceramic specimen was prepared at each component content and sintering temperature of Table 1. And genetic properties were measured. The measurement results of the physical properties are shown in the sample numbers * 1 to * 7 of Table 1.

The microwave dielectric ceramic composition of the present invention was fabricated and applied directly to a monopole antenna (FIG. 5). The produced monopole antenna characteristics are shown graphically in FIGS. 6 and 7. Referring to FIG. 6, it can be seen that the resonance frequency tends to increase as Mo substitution increases. In case of Mo substitution, the dielectric constant decreased due to the formation of the liquid phase secondary phase, Bi ₂ MoO _6, which increased the resonance frequency of the monopole antenna.

FIG. 7 illustrates the xz and xy plane radiation patterns of the monopole antenna fabricated according to the present invention. FIG. 7A illustrates the radiation pattern of the monopole antenna, which is ideally suited to the xz plane radiation pattern. In general, it can be seen that the dB value is higher than that of pure BiNbO ₄ due to the improvement of the quality factor due to Mo substitution.

The dielectric composition of the present invention showed excellent frequency bandwidth of 700 MHz or more in the 2 GHz band.

TABLE 1

Sample number Composition of Microwave Dielectric Materials Sintering Temperature ()

)Permittivity (

) Quality Factor (Qf)  f (ppm /) Basic composition (mol ratio) Additives (parts by weight) x CuO * 1 0 0.1 900 24.93 1196 -5.67 * 2 0 0.1 950 27.37 1508 -9.87 * # 3 0 0.1 1000 38.50 1388 -4.77 * 4 0 0.1 1050 31.70 1243 -152.24 * 5 0 0.1 1100 23.02 800 -107.91 * 6 0 0.1 1150 23.42 883 -163.55 * 7 0 0.1 1200 31.52 762 -165.28 8 0.1 0.1 900 27.54 793 -4.43 9 0.1 0.1 950 34.72 4272 -0.92 # 10 0.1 0.1 1000 37.37 4642 -10.90 11 0.1 0.1 1050 33.10 1940 -74.97 12 0.1 0.1 1100 31.65 1391 -62.31 13 0.2 0.1 850 29.68 2213 -24.87 # 14 0.2 0.1 900 37.93 3934 -0.30 15 0.2 0.1 950 37.22 2981 -0.07 16 0.2 0.1 1000 33.42 1653 -34.32 17 0.2 0.1 1050 27.33 754 -35.18 18 0.3 0.1 800 38.59 3610 -1.57 # 19 0.3 0.1 850 37.89 3927 0.15 20 0.3 0.1 900 36.44 2889 1.43 21 0.3 0.1 950 36.34 1693 4.02 # 22 0.4 0.1 800 37.05 1590 -14.60 23 0.4 0.1 850 35.90 1552 3.11 24 0.4 0.1 900 35.90 1010 -2.67 25 0.5 0.1 700 34.26 2144 16.22 # 26 0.5 0.1 750 34.75 2468 -10.51 27 0.5 0.1 800 33.34 1118 -0.76 28 0.5 0.1 850 33.06 810 -10.16

*: Sample as a comparative example of the present invention

#: Composition applied to thick film monopole antenna

As can be seen from Table 1, in the embodiment of the present invention of the sample Nos. 8 to 28, the sintering temperature is decreased due to the substitution of Mo, and the resonance frequency of the dielectric ceramic composition is mostly in the range of -75 to 5 ppm / ° C. . In particular, as the substitution amount of Mo increases the sintering temperature is lowered to demonstrate the effect of the present invention by showing excellent low-temperature sintering.

However, when Mo is not substituted as in Comparative Examples of Sample Nos. 1 to 7, it is already widely used as a known technique and does not fall within the scope of the present invention.

In conclusion, a dielectric ceramic composition having excellent microwave dielectric properties having various temperature compensation characteristics according to high dielectric constant, quality coefficient, stable temperature coefficient, and composition while being sintered at low temperature by substituting Mo in the composition represented by Formula 1 Could be manufactured.

On the other hand, Figure 2 and Figure 3 shows the change in dielectric constant and quality factor of the sintering temperature in the dielectric ceramic composition according to Table 1 as described above. Referring to this, it can be seen that when Mo is substituted, the dielectric properties are improved than when Mo is not substituted. In the composition where the substitution amount of Mo was x = 0.5, the dielectric properties were excellent even at an extremely low temperature of 700 ° C.

Figure 4 shows the change in the resonant frequency temperature coefficient of the dielectric ceramic composition of the embodiment of the present invention according to the samples Nos. Referring to this, it was confirmed that the temperature coefficient at the resonant frequency can be adjusted according to the amount of Mo added, thereby controlling the dielectric properties required for a specific mobile communication component.

≤38) 및 안정된 온도계수 및 조성에 따라 다양한 온도보상 특성(

= -74∼+16 ppm/℃)의 우수한 고주파 유전특성을 보이는 Bi(Nb_1-6x/5/₅Mo_x )O₄ (0.1≤x≤0.5)로 표시되는 조성물과, CuO로 이루어졌으며, Ag이나 Cu 또는 이들의 합금 또는 Ag/Pd 합금을 내부전극으로 사용할 수 있어 각종 고주파용 소자 즉, 적층칩 캐패시터, 적층칩 필터, 적층칩 캐패시터/인덕터 복합소자 및 모듈, 저온소결 기판, 공진기 또는 필터 및 세라믹 안테나용 유전체 재료로 사용될 수 있는 이점을 제공한다. As described above, the low-temperature sintered low loss microwave dielectric ceramic composition according to the present invention and a method for manufacturing the same have a very low sintering temperature (700-1100 ° C.) and a high quality factor (Q × f = 754-4464 GHz) than conventional microwave ceramics. ) And dielectric constant (27≤

≤38) and various temperature compensation characteristics according to stable temperature coefficient and composition (

Been made to -74~ + = composition, CuO represented by _{Bi (Nb 1-6x / 5/5} Mo x) O 4 (0.1≤x≤0.5) with a good high-frequency properties of the dielectric 16 ppm / ℃), Ag, Cu, or alloys thereof, or Ag / Pd alloys can be used as internal electrodes for various high-frequency devices, ie multilayer chip capacitors, multilayer chip filters, multilayer chip capacitors / inductor composites and modules, low temperature sintered substrates, resonators or filters And advantages that can be used as dielectric materials for ceramic antennas.

On the other hand, the low-temperature sintered low-loss microwave dielectric ceramic composition and the method for manufacturing the same according to the present invention, compared to the conventional microwave dielectric ceramic composition, the advantage of making an antenna having a small volume and a wide bandwidth, and low-temperature firing is possible It provides the advantage of lowering the manufacturing cost.

Although a preferred embodiment of the present invention has been described in detail above, those skilled in the art to which the present invention pertains may make various changes without departing from the spirit and scope of the invention as defined in the appended claims. It will be appreciated that modifications or variations may be made. Therefore, changes in the future embodiments of the present invention will not be able to escape the technology of the present invention.

Claims (7)

In a microwave dielectric ceramic composition, Comprises including the composition, CuO represented by the formula _{(Nb 1-6x / 5/5 Mo} x) Bi O 4 (0.1≤x≤0.5), Sintering temperature of the composition is a microwave dielectric ceramic composition, characterized in that 700 ~ 1100 ℃. delete The microwave dielectric ceramic composition of claim 1, wherein the total amount of CuO is 0.1 parts by weight based on 100 parts by weight of the microwave dielectric ceramic composition. In the formula _{Bi (Nb 1-6x / 5/5} Mo x) O 4 with a composition represented by (0.1≤x≤0.5), the manufacturing method of a microwave dielectric ceramic composition comprising a CuO, A weighing step of weighing Bi ₂ O ₃ , Nb ₂ O ₅ , MoO ₃ and CuO powder, which are raw powders constituting the composition, respectively; A first mixing step of mixing the weighed raw powders; After the first mixing step, drying the mixed mixture to a temperature of 80 ~ 120 ℃; Calcination step of calcining the dried product to a temperature of 650 ~ 900 ℃; A secondary mixing step of adding and mixing methanol or distilled water to the calcined ceramic composition obtained by the calcining step; A dry solidification step of solidifying the resultant mixture mixed in the second mixing step at a temperature of 80 to 120 ° C .; A molding step of forming the resultant by adding and mixing a predetermined binder to the resultant which has undergone the dry solidification step; A sintering step of sintering the formed product formed through the molding step at a temperature of 700 to 1250 ° C; And a polishing step of polishing the resultant dielectric ceramic composition in a predetermined form through the sintering step. The method of claim 4, wherein In the first mixing step, a grinding means such as a ball mill and zirconia balls for mixing dispersibility are added and used, methanol or distilled water is added to the mixture, and the mixing time is 24 hours to 48 hours, and the added methanol Or the content of distilled water is 200 to 300 parts by weight based on 100 parts by weight of the total weight of the mixture consisting of Bi ₂ O ₃ , Nb ₂ O ₅ , MoO ₃ , CuO powder; In the second mixing step, the content of methanol or distilled water is 200 to 300 parts by weight based on 100 parts by weight of the total, and the second mixing time is 24 to 48 hours, the method for producing a microwave dielectric ceramic composition. delete The microwave dielectric according to claim 4, wherein the binder in the forming step is polyvinyl alcohol or polyethylene glycol, and the content of the binder is 3 to 6 parts by weight based on 100 parts by weight of the solid content of the dry solidification step. Method for producing a ceramic composition.

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