KR100556529B1 - 다층 박막의 두께 측정 방법 및 이를 수행하기 위한 장치 - Google Patents
다층 박막의 두께 측정 방법 및 이를 수행하기 위한 장치 Download PDFInfo
- Publication number
- KR100556529B1 KR100556529B1 KR1020030056961A KR20030056961A KR100556529B1 KR 100556529 B1 KR100556529 B1 KR 100556529B1 KR 1020030056961 A KR1020030056961 A KR 1020030056961A KR 20030056961 A KR20030056961 A KR 20030056961A KR 100556529 B1 KR100556529 B1 KR 100556529B1
- Authority
- KR
- South Korea
- Prior art keywords
- thickness
- thin film
- multilayer thin
- wafer
- recipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
-
- H10P74/00—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030056961A KR100556529B1 (ko) | 2003-08-18 | 2003-08-18 | 다층 박막의 두께 측정 방법 및 이를 수행하기 위한 장치 |
| US10/914,149 US6912056B2 (en) | 2003-08-18 | 2004-08-10 | Apparatus and method for measuring each thickness of a multilayer stacked on a substrate |
| JP2004235955A JP2005062188A (ja) | 2003-08-18 | 2004-08-13 | 厚さ測定装置及び厚さ測定方法 |
| DE102004039861A DE102004039861A1 (de) | 2003-08-18 | 2004-08-17 | Vorrichtung und Verfahren zum Messen jeder Dicke einer Vielfachschicht, die auf einem Substrat aufgestapelt ist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030056961A KR100556529B1 (ko) | 2003-08-18 | 2003-08-18 | 다층 박막의 두께 측정 방법 및 이를 수행하기 위한 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20050019303A KR20050019303A (ko) | 2005-03-03 |
| KR100556529B1 true KR100556529B1 (ko) | 2006-03-06 |
Family
ID=34192117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020030056961A Expired - Fee Related KR100556529B1 (ko) | 2003-08-18 | 2003-08-18 | 다층 박막의 두께 측정 방법 및 이를 수행하기 위한 장치 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6912056B2 (enExample) |
| JP (1) | JP2005062188A (enExample) |
| KR (1) | KR100556529B1 (enExample) |
| DE (1) | DE102004039861A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100769566B1 (ko) | 2006-05-24 | 2007-10-23 | 중앙대학교 산학협력단 | 신경망을 이용한 박막 두께 측정 방법, 장치 및 이를 위한기록매체 |
| KR20220133467A (ko) | 2021-03-25 | 2022-10-05 | 한국전자기술연구원 | 디스플레이 검사 장치 및 디스플레이 검사 방법 |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004055181B3 (de) * | 2004-11-16 | 2006-05-11 | X-Fab Semiconductor Foundries Ag | Verfahren und Anordnung zur elektrischen Messung der Dicke von Halbleiterschichten |
| KR100644390B1 (ko) * | 2005-07-20 | 2006-11-10 | 삼성전자주식회사 | 박막 두께 측정방법 및 이를 수행하기 위한 장치 |
| US7444198B2 (en) * | 2006-12-15 | 2008-10-28 | Applied Materials, Inc. | Determining physical property of substrate |
| US20080158572A1 (en) * | 2006-12-27 | 2008-07-03 | Honeywell, Inc. | System and method for measurement of thickness of thin films |
| US7952708B2 (en) * | 2007-04-02 | 2011-05-31 | Applied Materials, Inc. | High throughput measurement system |
| JP2013253881A (ja) * | 2012-06-07 | 2013-12-19 | Fujitsu Semiconductor Ltd | パターン検査方法及びパターン検査装置 |
| JP2014122875A (ja) | 2012-11-26 | 2014-07-03 | Canon Inc | 層状物体の測定装置および方法 |
| KR102086362B1 (ko) * | 2013-03-08 | 2020-03-09 | 삼성전자주식회사 | 편광화된 빛을 이용하여 공정을 모니터링하는 반도체 제조 설비 및 모니터링 방법 |
| US8860956B2 (en) * | 2013-03-15 | 2014-10-14 | International Business Machines Corporation | Spectrometry employing extinction coefficient modulation |
| KR102254033B1 (ko) | 2014-06-13 | 2021-05-20 | 삼성전자주식회사 | 광학 측정 방법 및 광학 측정 시스템 |
| KR102214716B1 (ko) * | 2014-08-28 | 2021-02-10 | 삼성전자주식회사 | 박막 두께 측정 장치, 이를 포함하는 시스템 및 박막 두께 측정 방법 |
| CN108735854B (zh) * | 2017-04-13 | 2020-11-20 | 苏州阿特斯阳光能源科技有限公司 | 光伏组件焊带内反射光学利用率的表征方法 |
| KR102205597B1 (ko) * | 2019-08-16 | 2021-01-21 | 한국표준과학연구원 | 단일 샷 각도분해 분광 반사광 측정법을 이용한 다층박막 두께 측정장치 및 측정방법 |
| KR102249247B1 (ko) * | 2019-10-07 | 2021-05-07 | ㈜넥센서 | 병렬처리를 이용한 기판내 박막의 두께측정 방법 및 이를 이용한 두께 측정 장치 |
| CN114616455A (zh) | 2019-11-28 | 2022-06-10 | Ev 集团 E·索尔纳有限责任公司 | 用于测量基底的装置和方法 |
| USD977504S1 (en) | 2020-07-22 | 2023-02-07 | Applied Materials, Inc. | Portion of a display panel with a graphical user interface |
| US11688616B2 (en) * | 2020-07-22 | 2023-06-27 | Applied Materials, Inc. | Integrated substrate measurement system to improve manufacturing process performance |
| US12283503B2 (en) * | 2020-07-22 | 2025-04-22 | Applied Materials, Inc. | Substrate measurement subsystem |
| JP7623174B2 (ja) * | 2021-03-22 | 2025-01-28 | 株式会社Screenホールディングス | 膜厚推定方法、膜厚推定装置およびエッチング方法 |
| US12235624B2 (en) | 2021-12-21 | 2025-02-25 | Applied Materials, Inc. | Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing |
| US12339645B2 (en) | 2022-01-25 | 2025-06-24 | Applied Materials, Inc. | Estimation of chamber component conditions using substrate measurements |
| US12148647B2 (en) | 2022-01-25 | 2024-11-19 | Applied Materials, Inc. | Integrated substrate measurement system |
| US12216455B2 (en) * | 2022-01-25 | 2025-02-04 | Applied Materials, Inc. | Chamber component condition estimation using substrate measurements |
| JP7741003B2 (ja) * | 2022-01-31 | 2025-09-17 | 株式会社ディスコ | 測定方法及び測定装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02170008A (ja) * | 1988-12-23 | 1990-06-29 | Sumitomo Electric Ind Ltd | ヘテロ薄膜多層構造の半導体多層薄膜の膜厚測定法 |
| JP2955025B2 (ja) * | 1990-12-25 | 1999-10-04 | 富士通株式会社 | 多層膜の膜厚測定方法 |
| FR2692700A1 (fr) * | 1992-06-17 | 1993-12-24 | Philips Electronique Lab | Dispositif de traitement d'un signal mesure correspondant à l'intensité de rayons X réfléchie par une structure de couches multiples sur un substrat. |
| US5604581A (en) * | 1994-10-07 | 1997-02-18 | On-Line Technologies, Inc. | Film thickness and free carrier concentration analysis method and apparatus |
| US5784167A (en) * | 1996-12-03 | 1998-07-21 | United Microelectronics Corp. | Method of measuring thickness of a multi-layers film |
| US6489624B1 (en) * | 1997-07-18 | 2002-12-03 | Nikon Corporation | Apparatus and methods for detecting thickness of a patterned layer |
| KR100301067B1 (ko) * | 1999-08-23 | 2001-11-01 | 윤종용 | 마이크로 스크래치 검사방법 및 이를 적용한 장치 |
| KR100366613B1 (ko) * | 1999-10-06 | 2003-01-06 | 삼성전자 주식회사 | 박막두께 측정방법 및 이를 적용한 장치 |
-
2003
- 2003-08-18 KR KR1020030056961A patent/KR100556529B1/ko not_active Expired - Fee Related
-
2004
- 2004-08-10 US US10/914,149 patent/US6912056B2/en not_active Expired - Fee Related
- 2004-08-13 JP JP2004235955A patent/JP2005062188A/ja active Pending
- 2004-08-17 DE DE102004039861A patent/DE102004039861A1/de not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100769566B1 (ko) | 2006-05-24 | 2007-10-23 | 중앙대학교 산학협력단 | 신경망을 이용한 박막 두께 측정 방법, 장치 및 이를 위한기록매체 |
| KR20220133467A (ko) | 2021-03-25 | 2022-10-05 | 한국전자기술연구원 | 디스플레이 검사 장치 및 디스플레이 검사 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102004039861A1 (de) | 2005-03-17 |
| US20050041255A1 (en) | 2005-02-24 |
| KR20050019303A (ko) | 2005-03-03 |
| JP2005062188A (ja) | 2005-03-10 |
| US6912056B2 (en) | 2005-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100556529B1 (ko) | 다층 박막의 두께 측정 방법 및 이를 수행하기 위한 장치 | |
| US6940592B2 (en) | Calibration as well as measurement on the same workpiece during fabrication | |
| US7348192B2 (en) | Method for monitoring film thickness, a system for monitoring film thickness, a method for manufacturing a semiconductor device, and a program product for controlling film thickness monitoring system | |
| KR101257954B1 (ko) | 특성 시그니처 매칭을 이용한 스케터로메트리 방법 | |
| US20060117293A1 (en) | Method for designing an overlay mark | |
| US20130132021A1 (en) | Spectral Matching Based Calibration | |
| US6950186B2 (en) | Polarization analyzing method | |
| US5717490A (en) | Method for identifying order skipping in spectroreflective film measurement equipment | |
| US7466428B2 (en) | Method of measuring thickness of thin layer in semiconductor device and apparatus for performing method | |
| CN114910007B (zh) | 一种用于集成电路制造中的集成式膜厚测量系统和方法 | |
| KR100546330B1 (ko) | 측정의 신뢰도를 향상시킬 수 있는 측정용 패턴을구비하는 반도체장치 및 측정용 패턴을 이용한반도체장치의 측정방법 | |
| US7259850B2 (en) | Approach to improve ellipsometer modeling accuracy for solving material optical constants N & K | |
| US6731386B2 (en) | Measurement technique for ultra-thin oxides | |
| McGahan et al. | Combined spectroscopic ellipsometry and reflectometry for advanced semiconductor fabrication metrology | |
| CN100543955C (zh) | 光学常数计算方法和基板处理系统 | |
| JP3725538B2 (ja) | 半導体装置の製造方法 | |
| JP4641890B2 (ja) | 測定方法、および半導体装置の製造方法 | |
| KR100657154B1 (ko) | 보호층의 경화율 측정 방법 | |
| KR20060046876A (ko) | 박막 두께를 측정하기 위한 오에스 형성 방법 | |
| Diebold et al. | Metrology for on-chip interconnect dielectrics | |
| JP3762786B2 (ja) | 半導体装置の製造方法および半導体装置の製造装置 | |
| McGahan et al. | Optical characterization of TiN thin films | |
| JP2005354098A (ja) | 半導体装置の製造方法および半導体装置 | |
| JPS60231125A (ja) | 偏光解析装置 | |
| Engstrom et al. | Measuring films on and below polycrystalline silicon using reflectometry |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
|
| D14-X000 | Search report completed |
St.27 status event code: A-1-2-D10-D14-srh-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20120131 Year of fee payment: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20130224 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20130224 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |