KR100555385B1 - A apparatus for caching residual products in semiconductor device - Google Patents

Abstract

The present invention improves the collection efficiency by making the reaction by-products in the process chamber into powder in a faster time, and by stacking the collected powder uniformly in the collecting furnace, by-products of the semiconductor equipment to enable effective collection of powder The collecting device, which has a first connector for connecting to the vacuum pump on one side, and a second connector for connecting to the process chamber on the other side to collect and store the reaction by-products generated in the process chamber. And a refrigerant injection pipe for injecting a refrigerant into the collection path to promote collection of the reaction byproduct.

Powder, process chamber

Description

A device for caching residual products in semiconductor device

1 is a conceptual view for explaining a powder trap device of a semiconductor device according to the prior art

2 is a conceptual diagram illustrating a by-product collecting device of a semiconductor device according to the present invention;

3 is a view showing the appearance of the by-product collecting device of the semiconductor device according to the present invention;

4 is an internal cross-sectional view of the by-product collecting device of the semiconductor device taken along line II ′ of FIG.

5 is a perspective view of the internal by-product collecting device of the semiconductor device according to the present invention

Figure 6 is an exploded perspective view of the by-product collecting device of the semiconductor device according to the present invention

7 is a bottom plate separation state of the by-product collecting device of the semiconductor device according to the present invention

8 is a view for explaining a state in which the auxiliary trap grating according to the by-product collecting device of the semiconductor device of the present invention

9A to 9B are views for explaining the structure of the auxiliary trap grating according to the present invention;

10 is a view for explaining the arrangement relationship of the auxiliary trap grating according to the present invention;

FIG. 11 is a view for explaining a state in which an auxiliary partition is installed instead of the auxiliary trap grating of FIG. 8; FIG.

* Description of the symbols for the main parts of the drawings *

91, 93: first and second auxiliary trap grid 99: auxiliary bulkhead

100: process chamber 200: collecting furnace

300: vacuum chamber 400: refrigerant injection pipe

500: refrigerant discharge pipe 201: housing

201a: body portion 201b: top plate

201c: lower plate 203a: first trap plate

203b: second trap plate 205: first cooling line

207: second cooling line 209: third cooling line

210: support bar

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a by-product collecting device of semiconductor equipment suitable for more efficiently collecting reaction by-products such as unreacted gases and toxic gases generated inside a process chamber during semiconductor device manufacturing. .

In general, a semiconductor manufacturing process is mainly composed of a pre-process (Fabrication process) and a post-process (Assembly process), the pre-process is to deposit a thin film on a wafer (wafer) in various process chambers (Chamber), the deposition The process of manufacturing a so-called semiconductor chip by repeatedly performing a process of selectively etching the prepared thin film by processing a specific pattern, and the post-process refers to a chip manufactured in the previous process individually After separating into, refers to the process of assembling the finished product by combining with the lead frame.

At this time, the process of depositing a thin film on the wafer or etching the thin film deposited on the wafer is a process gas such as hydrogen and toxic gases such as silane (Silane), arsine (Arsine) and boron chloride and a process gas such as hydrogen It is carried out at a high temperature by using, a large amount of harmful gases such as various ignitable gases, corrosive foreign substances and toxic components are generated in the process chamber during the process.

Therefore, in the semiconductor manufacturing equipment, a scrubber is installed at the rear end of the vacuum pump that makes the process chamber vacuum and purifies the exhaust gas discharged from the process chamber and discharges it to the atmosphere.

However, when the exhaust gas discharged from the process chamber contacts the atmosphere or the ambient temperature is low, the exhaust gas becomes solid and becomes powder. The powder adheres to the exhaust line to increase the exhaust pressure and at the same time the vacuum is introduced into the vacuum pump. There has been a problem of causing a failure of the pump and a backflow of the exhaust gas to contaminate the wafer in the process chamber.

Accordingly, in order to solve the above problems, as shown in FIG. 1, a powder trap device is installed between the process chamber and the vacuum pump to adhere the exhaust gas discharged from the process chamber in a powder state.

That is, as shown in FIG. 1, the process chamber 1 and the vacuum pump 3 are connected to a pumping line 5, and the pumping line 5 includes reaction by-products generated in the process chamber 1. A trap tube 7 for trapping and accumulating in powder form is installed branched from the pumping line 5.

In the conventional powder trap device, unreacted gas generated during deposition or etching of a thin film in the process chamber 1 flows into the pumping line 5 having a relatively lower temperature atmosphere than the process chamber 1. While solidified into a powder of the powder state, it is accumulated in the trap pipe 7 installed branched from the pumping line (5).

In this case, the reason why the trap pipe 7 is installed by branching from the pumping line 5 is to prevent the powder from flowing into the vacuum pump 3 as mentioned above. For reference, reference numeral “9” in FIG. 1 indicates powder.

However, the powder trap apparatus of the prior art as described above had the following problems.

First, since the reaction by-product generated in the process chamber takes a long time to be converted into a powder state and accumulated in the trap tube, the entire process time is long.

That is, the reaction by-products generated when depositing or etching the thin film are rapidly converted into powder and accumulated in the trap tube, so that the next thin film deposition or etching process cannot be performed until the reaction by-products are not present in the process chamber. However, since it takes a long time for the reaction by-products to be converted into powder, the process chamber does not proceed with the process until the reaction by-products are removed, and the time to wait is long, and thus the operation rate of the equipment is lowered. Of course, due to the long waiting time of the process chamber, the total process time (TAT) is increased accordingly.

Second, since the space of the trap tube in which the powder is accumulated is very narrow, there is an inconvenience of frequently removing the powder accumulated in the trap tube.

The present invention has been made to solve the above problems of the prior art, and an object of the present invention is to provide a by-product collecting device of semiconductor equipment suitable for more effectively collecting the reaction by-products generated in the process chamber.

Another object of the present invention is to provide a by-product collecting device of a semiconductor device that can be collected by converting the reaction by-products in the process chamber to a powder state in a short time.

Another object of the present invention is to provide a by-product collecting device of the semiconductor equipment that can maximize the collection efficiency of the reaction by-products in the process chamber.

Still another object of the present invention is to provide a by-product collecting device of semiconductor equipment in which the collected reaction by-products can be uniformly stacked in the collecting device.

The by-product collecting device of the semiconductor device of the present invention for achieving the above object is a by-product collecting device of the semiconductor device for collecting the reaction by-products generated during the deposition or etching of the thin film in the process chamber, one side with a vacuum pump A first connector for connection, and a second connector for connection with the process chamber at the other side, a collecting passage for collecting and storing the reaction byproducts introduced into the process chamber, and promoting the collection of the reaction byproduct. It characterized in that it comprises a refrigerant injection pipe for injecting the refrigerant into the collection path for.

Here, the collecting passage further includes a refrigerant discharge pipe for discharging the refrigerant contributing to the collection of the reaction by-product to the outside, the refrigerant is preferably using a cool water (Cool water), may be used a freon gas. .

On the other hand, the capture passage according to the present invention, a plurality of trap plates installed in the housing, trap by stacking the reaction by-products generated in the process chamber, and one side is connected to the refrigerant inlet pipe and the refrigerant injection A first cooling line for branching the refrigerant injected through the pipe to the respective trap plates, a plurality of second cooling lines branched from the first cooling line and installed on the trap plates, and one side of the first cooling line; 2 is connected to the end of the cooling line and the other side is characterized in that it comprises a third cooling line connected to the refrigerant discharge pipe and arranged in parallel with the first cooling line.

In this case, the first cooling line and the second cooling line is preferably disposed through the central portion of each trap plate, the plurality of trap plates may have a shape that matches the inner shape of the housing.

In addition, the plurality of trap plates are provided with a first trap plate having a predetermined diameter hole in the center and a second trap plate of a plate type without holes are alternately installed. The gap with the trap plate is made smaller toward the bottom so that the collected powder is uniformly stacked as a whole.

In addition, the trap plate of the uppermost layer and the lowermost layer of the plurality of trap plates is preferably composed of a second trap plate without a hole, the powder introduced from the trap plate of the upper layer between the first trap plate and the second trap plate Also, a plurality of auxiliary trap grids or auxiliary partition walls for stacking a predetermined amount are further installed so that the powder laminated on each trap plate is uniform as a whole.

In this case, the auxiliary trap grating is composed of a first auxiliary trap grating formed on the first trap plate and a second auxiliary trap grating formed on the second trap plate, each of which is an upper portion of the first trap plate. A bottom surface of the outer light inner narrow shape in contact with the surface, first and second side surfaces provided in a direction perpendicular to the bottom surface, first and second flow ports respectively formed on the first and second side surfaces, and A contact plate which extends from the upper end of the first and second side surfaces to contact the lower surface of the upper trap plate, and is installed on the bottom surface, and the powder introduced from the outside flows straight into the first and second outlets. It is composed of the first and second partitions installed so as to escape through the inside without, and the locking step is provided on the upper surface of the contact plate so as to be caught on the edge of the upper trap plate, The first group secondary trap grating and the second auxiliary grid traps are preferably upper and lower asymmetrically arranged.

[Example]

Hereinafter, with reference to the accompanying drawings will be described by-product collecting device of the semiconductor device according to an embodiment of the present invention.

2 is a conceptual diagram illustrating a connection state between a by-product collecting device of a semiconductor device and a process chamber according to an embodiment of the present invention.

As shown in the figure, the process chamber 100 is connected to the collecting furnace 200 for collecting the reaction by-products generated during deposition or etching of the thin film, the collecting furnace 200 on one side of the collecting furnace 200 Through the vacuum pump 300 for making the interior of the process chamber 100 in a vacuum state is connected.

In addition, the lower end of one side of the collecting passage 200 is connected to the refrigerant injection pipe 400 and the refrigerant discharge pipe 500, respectively, the refrigerant injection pipe 400 is a refrigerant trap for promoting the collection of the reaction by-products 200 Inject into the inside, and the refrigerant discharge pipe 500 discharges the catalyst that contributed to the promotion to the outside of the collecting furnace (200).

In this case, the inlet portion of the refrigerant injection pipe 400 and the outlet portion of the refrigerant discharge pipe 500 are connected to a refrigerant storage tank (not shown), respectively, so that the refrigerant is continuously circulated. Cooling water or freon gas that can drastically lower the internal temperature of the furnace 200 is used.

That is, the coolant may be any one as long as it can convert the reaction by-products remaining in the process chamber 100 into a powder state in a faster time without reacting to thin film deposition or etching. For reference, in this embodiment, cooling water was used as the refrigerant.

This will be described in more detail as follows.

3 is a view illustrating an appearance of a by-product collecting device of a semiconductor device according to an exemplary embodiment of the present invention, and FIG. 4 is a cross-sectional view of the by-product collecting device of a semiconductor device taken along line II ′ of FIG. 3. Internal perspective view of the by-product collecting device of the semiconductor device according to an embodiment of the present invention.

First, as shown in FIG. 3, the by-product collecting device of the semiconductor device according to the embodiment of the present invention includes a collecting furnace 200 for rapidly collecting and storing reaction by-products generated in the process chamber 100, and the collecting. Refrigerant injection pipe 400 for injecting a refrigerant for promoting the collection of the reaction by-product into the furnace 200, and a refrigerant discharge pipe for discharging the refrigerant that contributed to the collection of the reaction by-product to the outside of the collecting furnace 200 ( 500, and a first connector 600a is provided at one side of the collecting passage 200 to be connected to the vacuum pump 300 which makes the interior of the process chamber 100 in a vacuum state. The other side is provided with a second connector 600b for connection with the process chamber 100.

4 and 5, the collecting path 200 is installed in the housing 201 and the housing 201, and when the thin film is deposited or etched in the process chamber 100. A plurality of trap plates 203a and 203b for trapping and storing the generated reaction by-products and one side of the trap are connected to the refrigerant injection pipe 400 to trap refrigerant injected through the refrigerant injection pipe 400. First cooling line 205 for branching to plates 203a and 203b and a plurality of second cooling lines branching from the first cooling line 205 and installed on each trap plate 203a and 203b. 207 and a third cooling line 209 connected to one end of the second cooling line 207 and the other side connected to the refrigerant discharge pipe 500 and installed in parallel with the first cooling line 205. It is configured by.

The plurality of trap plates 203a and 203b may include a first trap plate 203a having a hole having a predetermined diameter in a central portion thereof, and a second trap plate 203b having a flat hole without a hole. 203a and the second trap plate 203b are alternately provided.

At this time, the interval between the first trap plate 203a and the second trap plate 203b adjacent to each other is provided to be narrower toward the bottom, and the second trap plate (the uppermost layer and the lower layer) has no hole formed at the center thereof. 203b).

As described above, the first trap plate 203a having a hole having a predetermined diameter formed in the center and the second trap plate 203b of a disc shape having a relatively smaller size than the first trap plate 203a are alternately provided. In addition, the trapped powder is evenly laminated on the upper surface of each trap plate.

Meanwhile, the first trap plate 203a and the second trap plate 203b may have different diameters, and the first trap plate 203a may have a larger diameter than that of the second trap plate 203b. .

In addition, the shape of the first trap plate 203a and the second trap plate 203b has a shape that matches the internal shape of the housing 201, if the housing 201 is cylindrical, the first trap plate 203a And the shape of the second trap plate 203b also has a disc shape. For reference, in the exemplary embodiment of the present invention, the first and second trap plates 203a and 203b have a disc shape.

On the other hand, the first cooling line 205 and the third cooling line 209 are installed so as to pass through the central portion of the first trap plate 203a and the second trap plate 203b which are alternately installed. The second cooling line 207 branches from the first cooling line 205 and is installed on the upper surfaces of the first trap plate 203a and the second trap plate 203b.

At this time, since one side of the first cooling line 205 is connected to the refrigerant injection pipe 400, when the refrigerant is injected into the housing 201 through the refrigerant injection pipe 400, the refrigerant is formed in the first cooling line 205. The refrigerant is passed through the first cooling line 205 to the second cooling line 207 branched from the first cooling line 205, and the refrigerant passing through the second cooling line 207 is third-cooled. It is delivered to the refrigerant discharge pipe 500 through the line 209 and discharged to the outside.

As mentioned above, the refrigerant uses cooling water, and as the cooling water is transferred to the second cooling line 207 through the first cooling line 205, the first and second cooling lines 205 and 207 are used. In addition, the first and second trap plates 203a and 203b, in which the second cooling line 207 is installed on the upper surface thereof, also cool, eventually dropping the internal temperature of the collecting furnace 200 in an instant. Thrown away.

In general, when the process is in progress, the internal temperature of the process chamber 100 is maintained at 400 ~ 500 ~ degree, when the cooling water flows to the first and second cooling lines (205, 207), The internal temperature of the collecting passage 200 connected to the process chamber 100 is significantly lower than that of the process chamber 100.

Therefore, a powder (powder) is instantly formed by the internal temperature of the collecting furnace 200 which is relatively low at the moment when the reaction by-product generated in the process chamber 100, for example, the unreacted gas is introduced into the collecting furnace 200. Solidifies in form.

At this time, the first and second trap plates 203a and 203b and the first and second cooling lines 205 and 207 to cool the internal temperature of the collecting furnace 200 more quickly by the cooling water. Preferably, the third cooling line 209 is made of a material having good thermal conductivity. Examples of the material having good thermal conductivity include aluminum (Al), copper (Cu), and silver (Ag). Among them, aluminum (Al) having good thermal conductivity and low cost may be used.

In addition, the second cooling line 207 installed on the first and second trap plates 203a and 203b may be arranged in a direction to maximize the contact area with the first and second trap plates 203a and 203b. It is good to install. That is, although the second pipe 207 is installed while drawing a circular circle on the first and second trap plates 203a and 203b, the second cooling line 207 is provided in a zigzag form. Since the contact areas with the first and second trap plates 203a and 203b become larger, the internal temperature of the collecting furnace 200 can be lowered more quickly.

On the other hand, the by-product collecting device of the semiconductor device according to an embodiment of the present invention further includes a support bar 210 for fixing and supporting the first trap plate 203a while penetrating the edge portion of the first trap plate 203a. .

As mentioned above, the first cooling line 205 and the third cooling line 209 pass through the centers of the first and second trap plates 203a and 203b, and the first trap plate 203a is The second trap plate 203b is fixedly supported by the first cooling line 205 and the third cooling line 209 while being fixedly supported by the support bar 210.

For reference, the first trap plate 203a and the support bar 210 are interconnected by welding or a strong adhesive, and the first and third trap plates 203b also penetrate the center portion. The cooling lines 205 and 209 are interconnected by welding or strong adhesive.

In addition, the housing 201 has a structure that is easy to detach and combine to provide ease of maintenance and repair. That is, the powder is stuck to the upper part of the first and second trap plates 203a and 203b in the collecting furnace 200 due to the continuous process, and after a certain time, the first and second Powder stuck on the trap plates 203a and 203b should be removed.

Therefore, the body portion 201a and the upper plate 201b coupled to the upper portion of the body portion 201a by fastening bolts and the body portion by bolts fastening to facilitate separation and coupling of the housing 201. It is preferable that the lower plate 201c is coupled to the lower portion of the 201a.

Thus, by forming the housing 201 in a structure that can be easily separated and coupled, the body portion 201a and the lower plate when the powder on the first and second trap plates 203a and 203b are to be removed later. When the bolt 213 that couples the 201c is disassembled, only the lower plate 201c together with the first and second trap plates 203a and 203b are separately separated to form the first and second trap plates 203a and 203b. The powder can be easily removed (see FIG. 7).

For reference, FIG. 6 is an exploded perspective view of the housing according to the present invention, and FIG. 7 illustrates a state when the lower plate 201c is removed to remove powder accumulated on the first and second trap plates.

Hereinafter, the operation of the by-product collecting device of the semiconductor device according to the present invention configured as described above will be described.

After the deposition or etching process of the thin film is completed, a large amount of reaction by-products generated during the deposition or etching process of the thin film is generated in the process chamber 100, and the reaction by-products are collected by the vacuum pump 300. 200 is introduced into the interior.

At this time, the cooling water is circulated along the cooling water circulation path consisting of the first and second cooling lines 205 and 207 and the third cooling line 209 in the collecting passage 200, and the second cooling line Since 207 is provided on the surfaces of the first and second trap plates 203a and 203b, the surfaces of the first and second trap plates 203a and 203b are cooled to form the interior of the collecting path 200. The temperature drops sharply as a whole. Therefore, the reaction by-product introduced from the process chamber 100 is quickly converted into a powder in powder form by the cold temperature in the collecting furnace 200.

Thereafter, the powder is fixed to the surfaces of the first and second trap plates 203a and 203b. As mentioned above, the first trap plate 203a having a predetermined diameter hole in the center and the hole are Since the second trap plates 203b which are not provided are alternately installed, the powder is uniformly fixed to the surfaces of the first trap plate 203a and the second trap plate 203b.

That is, the reaction by-product flowing from the process chamber 100 is immediately solidified by the cold temperature atmosphere in the collecting furnace 200, and part of the reaction by-product is accumulated on the surface of the second trap plate 203b of the plate type installed on the uppermost layer. Flows downward along the edge portion thereof and accumulates on the surface of the first trap plate 203a having a hole formed at the center thereof, and falls to the lower second trap plate 203b through the hole formed at the center thereof.

In this way, the powder falls along the edge of the second trap plate 203b to the upper surface of the first trap plate 203a, and the powder dropped on the upper surface of the first trap plate 203a is partially Stacked on top of the first trap plate 203a, and part of the second trap plate of the uppermost layer is eventually dropped while repeating the process of falling to the upper surface of the second trap plate 203b below the hole through the hole formed in the center thereof. From 203b to the lowermost 2nd trap plate 203b, powder will be piled up uniformly as a whole.

Meanwhile, FIG. 8 illustrates an example in which a plurality of auxiliary trap gratings are installed between each trap plate so that the trapped powder can be more uniformly stacked on the first and second trap plates 203a and 203b. A perspective view of a trap plate.

At this time, the auxiliary trap lattice, as shown in Figure 9a to 9b, the first auxiliary trap lattice 91 is installed on the first trap plate (203a) and the second trap plate (203b) is installed on the second trap plate (203b) It consists of two auxiliary trap gratings 93, wherein the first and second auxiliary trap gratings 91 and 93 are formed radially toward the center of each trap plate in the shape of outer light inner narrow. As shown in FIG. 9A, the first auxiliary trap grating 91 has a bottom surface 91a in contact with the top surface of the first trap plate 203a and a direction perpendicular to the bottom surface 91a. First and second side surfaces 91b and 91c installed in the first and second and second flow ports 91d and 91e and upper layer trap plates respectively formed in the first and second side surfaces 91b and 91c. The contact plate 91f provided to contact the lower surface of the (second trap plate) and the bottom surface 91c, but are introduced from the outside (wide side) The first and second bulkheads 91g and 91h provided so that the powder can be pulled out through the inner side (the narrow side) without directly exiting the distribution ports 91d and 91e. It is composed of a locking step (91i) installed on the upper surface of the contact plate 91 so as to be caught on the edge.

In this case, the contact plate 91f and the locking step 91i serve to fix the first auxiliary trap grating 91 so as not to move toward the center of the first trap plate 203a, and the contact plate 91f. ) Increases the contact area with the lower surface of the upper trap plate (second trap plate), and the locking jaw 91i extends over the edge portion of the second trap plate 203b. 91) to prevent movement towards the center of the trap plate.

On the other hand, the second auxiliary trap grating 93 is as shown in Figure 9b, the structure is almost similar to the first auxiliary trap grating 91 shown in Figure 9a, the first auxiliary trap grating 91 Unlike the fact that the wide outer side is blocked, the first auxiliary trap lattice 91 is a powder is introduced into the wide outer side, the second auxiliary trap lattice 93 is the first trap plate (203a) It is different in that it flows into the narrow width through the hole installed in the center of the.

In consideration of the fact that the first and second auxiliary trap gratings 91 and 93 are moved from the upper side to the lower side of the collecting furnace 200 because the vacuum pump operates under the collecting furnace 200. By varying the flow of the powder using the first and second auxiliary trap grids 91 and 93, a predetermined amount of powder is trapped on the inner surface of the first and second auxiliary trap grids 91 and 93. It is to be stacked, which causes the powder to be deposited in a uniform distribution on the trap plate of each layer.

In other words, when the vacuum pump is operated, the powder flowing along the edge of the upper trap plate is transferred to the bottom surface (the wide side) of the first auxiliary trap grid 91 and the upper surface of the first trap plate 203a. (As described above, of course, a certain amount of powder is also accumulated on the upper surface of the upper trap plate (second trap plate)), the first auxiliary trap grating 91 on the first trap plate (203a) ) Is installed so that the flow of powder follows the arrow direction as shown in FIG. 9A.

At this time, the powder introduced into the upper surface of the first trap plate 203a and the bottom surface of the first auxiliary trap grid 91 flows toward the hole formed at the center of the first trap plate 203a (because, Since the vacuum pump is operating on the lower side), the powder introduced into the bottom surface (the wide side) of the first auxiliary trap grating 91 is directly formed by the first and second partition walls 91g and 91h. 1, the 2nd distribution ports 91d and 91e cannot flow out into the narrow inside, but the 1st and 2nd distribution openings 91d ride the inner wall of the 1st, 2nd partition walls 91g and 91h. Will exit at 91e.

However, the powder tends to escape through the first and second flow ports 91d and 91e formed on both sides of the first auxiliary trap lattice 91 (actually, a large amount of powder is removed). ), Since powder flows also outside the first and second flow ports 91d and 91e in the direction of the arrow, a predetermined vortex phenomenon occurs inside the first and second flow ports 91d and 91e. In the end, the powder which did not escape to the outside of the first auxiliary trap grid 91 through the first and second outlets 91d and 91e has a bottom surface (width of the first auxiliary trap grid 91). On the narrow side).

On the other hand, as shown in Figure 9b, the second auxiliary trap grating 93 is also a predetermined amount of powder is accumulated on the inner surface by the same principle as the first auxiliary trap grating 91 described above, Omitted below.

When the auxiliary trap grating is installed in this way, the first auxiliary trap grating 91 installed on the first trap plate 203a and the second auxiliary trap grating 93 installed on the second trap plate 203b are provided. As shown in Figure 10, it is preferable to arrange the up and down asymmetric, so that the collection of the powder through the first and second auxiliary trap grating 91, 93 is more uniform over the entire trap plate To be collected.

In addition, the by-product collecting device of the semiconductor device of the present invention, as shown in Figure 11, may be provided with an auxiliary partition wall instead of the auxiliary trap grid. At this time, the auxiliary bulkhead 99 traps a predetermined amount of powder between the auxiliary bulkheads 99 using the same principle as the auxiliary trap grid described above, thereby enabling a uniform powder trap across the trap plate.

For reference, the number of the first and second auxiliary trap gratings 91a and 91b or the auxiliary partition walls 99 may be freely arranged without being limited to a specific number, and the number of the auxiliary trap gratings or the auxiliary partition walls installed thereon. The number of auxiliary trap gratings or auxiliary bulkheads installed below and below may not necessarily match.

Although the preferred embodiments of the present invention have been described above, it is obvious that the present invention can use various changes, modifications, and equivalents, and that the embodiments can be modified and applied in the same manner. Accordingly, the above description is not intended to limit the scope of the invention as defined by the following claims.

As described above, the by-product collecting device of the semiconductor device of the present invention has the following effects.

First, since the internal temperature of the collecting furnace is artificially sharply dropped by using a coolant such as cooling water, the reaction byproduct generated in the process chamber can be converted into a powder in a faster time, thereby increasing the collection efficiency of the reaction byproduct. .

Second, by effectively collecting the powder and firmly fixing the inside of the collecting furnace, it is possible to prevent the powder from flowing into the vacuum pump, thereby preventing the vacuum pump from failing and also allowing the powder to flow back into the process chamber. It is possible to prevent the contamination of the wafer in advance.

Third, since the reaction by-products of the process chamber are converted into a powder state and collected in a faster time, the process chamber can be minimized in unnecessary waiting time to maximize the operation rate of the process chamber.

Fourth, since the powder laminated on each trap plate has a uniform distribution as a whole, it is possible to trap the powder for a long time, so that the operation rate of the equipment can be improved by about 80% compared to the conventional method of removing the powder frequently.

Claims (25)

In the by-product collecting device of the semiconductor device for collecting the reaction by-products generated during deposition or etching of the thin film in the process chamber, One side includes a first connector for connection with a vacuum pump and a second connector for connection with the process chamber on the other side, and a housing and a trap installed in the housing to trap reaction byproducts generated in the process chamber. A plurality of trap plates stacked in a stack, one side connected to the refrigerant injection pipe, and a first cooling line for branching the refrigerant injected through the refrigerant injection pipe to the respective trap plates, and a branch from the first cooling line. And a plurality of second cooling lines installed on each of the trap plates, and one side of which is connected to an end of the second cooling line and the other side of which is connected to the refrigerant discharge pipe and arranged side by side with the first cooling line. A collecting furnace for rapidly collecting and storing the reaction byproducts introduced into the process chamber including a line; By-product collecting device of the semiconductor device, characterized in that it comprises a refrigerant injection pipe for injecting the refrigerant into the collection to facilitate the collection of the reaction by-products. The by-product collecting device of claim 1, wherein the collecting path further comprises a refrigerant discharge pipe for discharging the refrigerant that contributed to the collection of the reaction by-product to the outside. The apparatus of claim 1, wherein the refrigerant is any one of cooling water and a freon gas. delete The by-product collecting apparatus of claim 1, wherein the first cooling line and the second cooling line are disposed through the central portions of the plurality of trap plates. The apparatus of claim 5, wherein the plurality of trap plates have a shape that matches an inner shape of the housing. The by-product of semiconductor equipment according to claim 6, wherein the plurality of trap plates are provided alternately with a first trap plate having a hole having a predetermined diameter and a second trap plate having a hole without a hole. Collection device. 8. The apparatus of claim 7, wherein the first trap plate and the second trap plate have different diameters. The apparatus of claim 8, wherein the trap plates installed on the uppermost layer and the lowermost layer of the plurality of trap plates comprise a second trap plate. The apparatus of claim 8, wherein the first trap plate has a larger diameter than the second trap plate. The by-product collecting device of claim 7, wherein the plurality of trap plates are smaller as the distance from adjacent trap plates becomes downward. The apparatus of claim 7, wherein the first trap plates are mutually supported and fixed by support bars installed through respective edge portions. The method according to any one of claims 1 to 5, wherein a plurality of auxiliary trap lattice for stacking a predetermined amount of powder introduced from the trap plate of the upper layer between the first trap plate and the second trap plate; By-product collecting device of the semiconductor equipment, characterized in that it further comprises a secondary partition. The method of claim 13, wherein the auxiliary trap grating, A first auxiliary trap grating installed on the first trap plate; By-product collecting device of the semiconductor device, characterized in that consisting of a second auxiliary trap grating installed on the second trap plate. The method of claim 14, wherein the first and second auxiliary trap grating, A bottom surface of the outer light inner narrow shape in contact with the upper surface of the first trap plate, First and second side surfaces installed in a vertical direction in contact with the bottom surface; First and second flow ports respectively formed on the first and second side surfaces; A contact plate extending from upper ends of the first and second side surfaces to be in contact with the lower surface of the upper trap plate; It is installed on the bottom surface, the first and second partitions are installed so that the powder introduced from the outside can pass through the inside without going directly to the first and second outlet, By-product collecting device of the semiconductor device, characterized in that it comprises a locking step installed on the upper surface of the contact plate so as to be caught on the edge of the upper trap plate. The method according to claim 14 or 15, wherein the first auxiliary trap grating provided on the first trap plate and the second auxiliary trap grating provided on the second trap plate are arranged asymmetrically up and down. By-product collection device for semiconductor equipment. In the by-product collecting device of the semiconductor device for collecting the reaction by-products generated during deposition or etching of the thin film in the process chamber, A housing having a first connector for connection with the process chamber and a second connector for connection with a vacuum pump for vacuuming the process chamber; A plurality of trap plates installed in the housing to trap and stack reaction by-products flowing in the process chamber; A plurality of cooling lines for delivering refrigerant to each trap plate to cool the respective trap plates to reduce the internal temperature of the housing; By-product collection device of the semiconductor equipment, characterized in that it comprises a refrigerant injection pipe for injecting the refrigerant into the cooling line. 18. The by-product of semiconductor equipment according to claim 17, wherein the plurality of trap plates are alternately provided with a first trap plate having a hole having a predetermined diameter and a second trap plate having a hole without a hole. Collection device. 18. The by-product collecting apparatus of claim 17, wherein the refrigerant is any one of a cooling water and a freon gas. The method of claim 17, wherein the plurality of cooling lines, A first cooling line passing through the central portions of the plurality of trap plates and for branching the refrigerant introduced through the refrigerant injection pipes to the trap plates; A plurality of second cooling lines branched from the first cooling lines and installed on an upper surface of each trap plate; And a third cooling line connected to an end of the second cooling line for discharging the refrigerant via the second cooling line to the outside of the housing. 21. The method of any one of claims 17 to 20, wherein a plurality of auxiliary trap gratings or auxiliary partition walls are further provided between the trap plates for stacking a predetermined amount of powder flowing from the upper trap plate. By-product collecting device of the semiconductor equipment, characterized in that. The method of claim 21, wherein the auxiliary trap grating, A bottom surface of the outer light inner narrow shape in contact with the upper surface of the first trap plate, First and second side surfaces installed in a vertical direction in contact with the bottom surface; First and second flow ports respectively formed on the first and second side surfaces; A contact plate extending from upper ends of the first and second side surfaces to be in contact with the lower surface of the upper trap plate; It is installed on the bottom surface, the first and second partitions are installed so that the powder introduced from the outside can pass through the inside without going directly to the first and second outlet, By-product collecting device of the semiconductor device, characterized in that it comprises a locking step installed on the upper surface of the contact plate so as to be caught on the edge of the upper trap plate. In the by-product collecting device of the semiconductor device for collecting the reaction by-products generated during deposition or etching of the thin film in the process chamber, A housing having a first connector for connection with the process chamber and a second connector for connection with a vacuum pump for vacuuming the process chamber; First and second trap plates of a disc shape, which are alternately installed in the housing and trap and stack reaction by-products generated in the process chamber; A first cooling line passing through a central portion of the first and second trap plates and branching refrigerant introduced from the outside of the housing to the first and second trap plates; A plurality of second cooling lines branched from the first cooling line and installed on upper surfaces of the first and second trap plates; And a third cooling line connected to an end of the second cooling line for discharging the refrigerant via the second cooling line to the outside of the housing. The apparatus of claim 23, wherein the housing further comprises a refrigerant injection pipe connected to the first cooling line and a refrigerant discharge pipe connected to the third cooling line. 25. The semiconductor device according to claim 23 or 24, wherein the first trap plate is formed in a disc shape with a hole having a predetermined diameter in the center thereof, and the second trap plate is formed in a disc shape without a hole. By-product collection device.

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