KR100525076B1 - slurry for chemical mechanical polishing - Google Patents
slurry for chemical mechanical polishing Download PDFInfo
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- KR100525076B1 KR100525076B1 KR10-2002-0078372A KR20020078372A KR100525076B1 KR 100525076 B1 KR100525076 B1 KR 100525076B1 KR 20020078372 A KR20020078372 A KR 20020078372A KR 100525076 B1 KR100525076 B1 KR 100525076B1
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- South Korea
- Prior art keywords
- slurry
- chemical mechanical
- mechanical polishing
- alumina
- oxide
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- 239000002002 slurry Substances 0.000 title claims abstract description 54
- 238000005498 polishing Methods 0.000 title claims abstract description 23
- 239000000126 substance Substances 0.000 title claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 150000004767 nitrides Chemical class 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000654 additive Substances 0.000 abstract description 10
- 230000000996 additive effect Effects 0.000 abstract description 8
- 238000007517 polishing process Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
본 발명은 화학적 기계적 연마(Chemical Mechanical Polishing) 공정에 있어서, 실리콘 옥사이드 계열의 절연막을 안정적으로 연마할 수 있는 화학적 기계적 연마용 슬러리에 관해 개시한 것으로서, 옥사이드용 슬러리에 알루미나를 혼합한 것을 포함한다.The present invention discloses a chemical mechanical polishing slurry capable of stably polishing a silicon oxide insulating film in a chemical mechanical polishing process, and includes mixing alumina with an oxide slurry.
따라서, 본 발명에서는 첨가제 추가없이 실리콘 옥사이드용 실리카에 알루미나를 혼합한 슬러리를 이용함으로써, 상기 슬러리 간의 상호 인력에 의해 갭필 옥사이드막과 패드 질화막 간의 선택비가 감소된다. 그러므로, 패턴 밀도가 높은 지역에서는 STI에서의 갭필 옥사이드막이 액티브영역에서의 패드 질화막보다 많이 연마되어 침식되는 현상이 발생되지 않는다. 또한, 본 발명은 첨가제를 포함시키지 않음에 따라 생산 비용을 낮출 수 있는 이점이 있다.Therefore, in the present invention, by using a slurry in which alumina is mixed with silica for silicon oxide without adding an additive, the selectivity ratio between the gap fill oxide film and the pad nitride film is reduced by mutual attraction between the slurries. Therefore, in the region where the pattern density is high, the gap fill oxide film in the STI is more polished and eroded than the pad nitride film in the active region. In addition, the present invention has the advantage of lowering the production cost by not including the additive.
Description
본 발명은 슬러리(slurry)에 관한 것으로, 보다 상세하게는 화학적 기계적 연마(Chemical Mechanical Polishing) 공정에 있어서, 옥사이드 계열의 절연막을 안정적으로 연마할 수 있는 화학적 기계적 연마용 슬러리에 관한 것이다.The present invention relates to a slurry, and more particularly, to a chemical mechanical polishing slurry capable of stably polishing an oxide-based insulating film in a chemical mechanical polishing process.
화학적 기계적 연마 공정은 반도체 소자가 다층 배선 구조를 가지고 좀더 엄격한 광역 평탄화와 엄격한 초점 심도(Depth of Focus)를 요구하기 때문에 도입되었고 소자가 더욱 미세화되고 웨이퍼가 더욱 대형화 되기 때문에 이에 대한 수요는 급격히 증가할 것이다. Chemical mechanical polishing processes have been introduced because semiconductor devices have a multi-layered wiring structure and require more stringent wide area planarization and tighter depth of focus, and demand for these devices will increase dramatically as devices become more miniaturized and wafers become larger. will be.
화학적 기계적 연마 공정에 있어서, 화학적 반응은 슬러리 내에 함유되어 있는 화공약품과 막질간의 화학반응을 의미하며, 기계적 반응은 폴리싱(Polishing) 장비에서 가해진 힘이 슬러리 내의 입자(Abrasives)에 전달되고 이미 화학적 반응을 받은 막질이 입자에 의해 기계적으로 뜯겨져 나가는 것을 의미한다. In chemical mechanical polishing processes, chemical reactions mean chemical reactions between chemicals contained in the slurry and the film quality, and mechanical reactions in which the force exerted by the polishing equipment is transferred to the abrasives in the slurry and are already chemically reacted. This means that the film is mechanically torn off by the particles.
상기 슬러리의 구성성분은 크게 초순수, 화공약품, 입자로 이루어져 있으며, 대부분의 경우 화학적 기계적 연마 특성을 향상시키기 위하여 계면활성제 (Surfactant) 등의 첨가제가 소량 첨가된다. The slurry is composed of ultrapure water, chemicals, particles, and in most cases, small amounts of additives such as surfactants are added to improve chemical mechanical polishing properties.
화학적 기계적 연마용 슬러리의 입자 내에는 Na, Mg, Al, Ti, Mn, Fe, Ni, Cu, Zn 또는 Zr 등의 많은 원소들이 포함되어 있으며, 옥사이드(Oxide) 및 다결정 실리콘 막질을 연마하기 위한 슬러리로는 실리카(silica)가 가장 널리 사용되며, W(tungsten) 이나 Cu와 같은 금속 연마용 슬러리로는 알루미나(Alumina)(Al2O3)가 가장 널리 사용되고 있다.In the particles of the chemical mechanical polishing slurry, many elements such as Na, Mg, Al, Ti, Mn, Fe, Ni, Cu, Zn or Zr are contained, and the slurry for polishing oxide and polycrystalline silicon film Silica is the most widely used furnace, and alumina (Al 2 O 3) is the most widely used slurry for polishing metals such as tungsten or Cu.
화학적 기계적 연마 공정은 광역 평탄화를 위한 절연막 연마 공정, STI(Swallow Trench Isolation) 공정 그리고 다층 배선을 사용하기 위한 금속 연마 공정이 도입되어 사용되는데, 특히, 패턴 밀도가 높은 지역에서는 STI에서의 갭필 옥사이드막이 액티브영역에서의 패드 질화막보다 많이 연마되어 침식되는 현상이 발생된다.The chemical mechanical polishing process includes an insulating film polishing process for wide area planarization, a swallow trench isolation (STI) process, and a metal polishing process for using multi-layered wiring. In particular, a gap fill oxide film in STI is used in areas with high pattern density. More polishing and erosion than the pad nitride film in the active region occurs.
따라서, 종래의 기술에서는, 상기 침식 현상을 방지하기 위해서, 단일의 슬러리에 첨가제를 추가시켜 패드 질화막과 갭필 옥사이드막 사이의 선택비를 높이는 방식을 채택하였다.Therefore, in the related art, in order to prevent the erosion phenomenon, a method of increasing the selectivity between the pad nitride film and the gap fill oxide film by adding an additive to a single slurry is adopted.
그러나, 종래의 기술에서는 단일의 슬러리에 첨가제를 추가시킴에 따라, 첨가제 추가에 따른 제조 비용이 상승하는 문제점이 있었다. However, in the prior art, as the additive is added to a single slurry, there is a problem in that the manufacturing cost is increased due to the addition of the additive.
이에 본 발명은 상기 종래의 문제점을 해결하기 위해 안출된 것으로, 첨가제 추가에 따른 비용 상승없이 슬러리 만으로 구성된 화학적 기계적 연마용 슬러리를 제공함에 그 목적이 있다.Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is to provide a slurry for chemical mechanical polishing, which is composed only of the slurry without increasing the cost of adding an additive.
상기 목적을 달성하기 위한 본 발명에 따른 슬러리는 실리콘 옥사이드용 슬러리에 알루미나를 혼합한 것을 특징으로 한다.The slurry according to the present invention for achieving the above object is characterized in that the alumina is mixed in the slurry for silicon oxide.
상기 알루미나의 입자 크기는 상기 옥사이드용 슬러리의 것에 비해 3∼4배 크게 형성한다. 상기 옥사이드용 슬러리는 실리카를 이용한다.The particle size of the alumina is formed 3 to 4 times larger than that of the slurry for the oxide. The slurry for oxide uses silica.
상기 알루미나 및 실리콘 옥사이드용 슬러리는 상호 인력에 의해 결합된다.The slurry for alumina and silicon oxide is bonded by mutual attraction.
이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
본 발명에 따른 슬러리는, 실리콘 옥사이드용 슬러리에 알루미나를 혼합하며, 상기 알루미나와 실리콘 옥사이드용 슬러리는 각각 pH가 7이 되도록 한다.In the slurry according to the present invention, alumina is mixed with the slurry for silicon oxide, and the slurry for the alumina and the silicon oxide is set to have a pH of 7, respectively.
이때, 알루미나의 입자 크기는 실리콘 옥사이드용 슬러리의 입자 크기보다 3∼4배 정도 큰 것을 이용한다. At this time, the particle size of the alumina is used 3 to 4 times larger than the particle size of the slurry for silicon oxide.
상기 알루미나의 고유 힘은 pH7에서 +20mV의 값을 갖는 성질을 가지며, 실리콘 옥사이드용 슬러리의 고유 힘은 pH7에서 -50mV의 값을 갖는 성질을 가진다.The intrinsic force of the alumina has a property of having a value of + 20mV at pH 7, and the intrinsic force of the slurry for silicon oxide has a property of having a value of -50mV at pH7.
도 1 내지 도 3은 본 발명에 따른 화학적 기계적 연마용 슬러리를 이용하여 갭필 옥사이드막을 화학적 기계적 연마하는 공정을 보인 도면이다.1 to 3 are diagrams showing a process of chemical mechanical polishing a gapfill oxide film using a chemical mechanical polishing slurry according to the present invention.
본 발명에 따른 슬러리를 이용하여 갭필 옥사이드막을 연마하는 과정을 첨부된 도 1 내지 도 3을 참고하여 설명하면 다음과 같다.The process of polishing the gapfill oxide film using the slurry according to the present invention will be described with reference to FIGS. 1 to 3.
도 1에 도시된 바와 같이, 먼저, 반도체 기판(1)의 필드영역에 공지의 STI(Shallow Trench Isolation) 공정에 의해 트렌치(2)를 형성한 다음, 상기 트렌치(2) 구조를 덮는 실리콘 옥사이드 계열의 갭필 옥사이드막(5)을 형성한다. 도면부호 3은 패드 산화막을, 도면 부호 4는 패드 질화막을 각각 나타낸 것이다.As shown in FIG. 1, first, a trench 2 is formed in a field region of a semiconductor substrate 1 by a well-known shallow trench isolation (STI) process, and then a silicon oxide based layer covering the trench 2 structure. The gap fill oxide film 5 is formed. Reference numeral 3 denotes a pad oxide film, and reference numeral 4 denotes a pad nitride film.
이어, 상기 갭필 옥사이드막(5)에 본 발명에 따른 슬러리를 공급한다. 이때, 상기 본 발명에 따른 슬러리는 알루미나 및 실리콘 옥사이드용 슬러리를 혼합하여 pH가 7이 되도록 셋팅한다. 이때, 본 발명에 따른 슬러리의 pH가 7이 되도록 하기 위해서, KOH, HCl 또는 순수(DeIonized water)를 이용한다.Subsequently, the slurry according to the present invention is supplied to the gap fill oxide film 5. At this time, the slurry according to the present invention is set to a pH of 7 by mixing the slurry for alumina and silicon oxide. At this time, in order to make the pH of the slurry according to the present invention to 7, KOH, HCl or pure water (DeIonized water) is used.
상기 두 종류의 슬러리를 혼합한 슬러리 간의 인력이 상호적으로 작용하여 결합이 쉽게 이루어진다. 또한, 알루미나의 입자 크기는 실리콘 옥사이드용 슬러리의 입자 크기보다 3∼4배 정도 크므로, 한 개의 알루미나에 여러 개의 실리콘 옥사이드용 슬러리가 결합하게 된다. The attraction between the slurry mixture of the two kinds of slurry interacts with each other to facilitate bonding. In addition, since the particle size of the alumina is about 3 to 4 times larger than the particle size of the slurry for the silicon oxide, several silicon oxide slurries are bonded to one alumina.
이러한 현상을 이용하여 두 슬러리를 혼합한 본 발명에 따른 슬러리를 사용하여 갭필 옥사이드막에 화학적 기계적 연마 공정을 진행하게 되면, 먼저 기판의 가장 위에 전체적으로 존재하는 갭필 옥사이드막은 폴리싱 시 가해지는 헤드(미도시)의 압력에 의해 알루미나를 둘러싸고 있는 실리콘 옥사이드용 슬러리와 반응하여 폴리싱되어진다. When the chemical mechanical polishing process is performed on the gapfill oxide film by using the slurry according to the present invention in which two slurries are mixed using this phenomenon, the gapfill oxide film, which is entirely present on the top of the substrate, is applied to the head (not shown) during polishing. Polished by reaction with a slurry for silicon oxide surrounding the alumina by the pressure of).
이 과정이 진행되어지다가, 도 2에 도시된 바와 같이, STI에서 액티브영역에 존재하는 패드 질화막과 필드영역에 존재하는 갭필 옥사이드막만이 남게 되면 패드 질화막과 갭필 옥사이드막이 가지고 있는 고유 힘이 pH7에서 거의 같은 -30mV의 값을 가지므로, 도 3에 도시된 바와 같이, 알루미나와 반응하게 되어 동일한 선택비로 연마되어 트렌치(2) 구조를 매립시키는 소자격리막(10)이 형성된다.도 1, 도 2 및 도 3에서, 미설명된 도면부호 a는 알루미나를 나타낸 것이고, 도면부호 b는 실리콘 옥사이드용 슬러리를 나타낸 것이다.As this process proceeds, as shown in FIG. 2, when only the pad nitride film in the active region and the gap fill oxide film in the field region remain in the STI, the inherent force of the pad nitride film and the gap fill oxide film is maintained at pH7. Since it has a value of approximately -30 mV, as shown in FIG. 3, an element isolation film 10 is formed which reacts with alumina and is polished at the same selectivity to fill the trench 2 structure. FIGS. 1 and 2. In FIG. 3, reference numeral a denotes alumina, and reference numeral b denotes a slurry for silicon oxide.
본 발명에 따르면, 실리콘 옥사이드용 실리카에 알루미나를 혼합한 슬러리를 이용하여 갭필 옥사이드막을 화학적 기계적 연마함으로써, 패턴 밀도가 높은 지역에서는 STI에서의 갭필 옥사이드막이 액티브영역에서의 패드 질화막보다 많이 연마되어 침식되는 현상이 발생되지 않는다. 또한, 기존의 단일 슬러리에 첨가제를 추가시킨 것에 비해 가격이 저렴하다.According to the present invention, by chemical mechanical polishing of a gapfill oxide film using a slurry in which alumina is mixed with silica for silicon oxide, the gapfill oxide film in the STI is polished and eroded more than the pad nitride film in the active region in a region having a high pattern density. The phenomenon does not occur. It is also cheaper than adding an additive to an existing single slurry.
이상에서와 같이, 본 발명에서는 첨가제 추가없이 실리콘 옥사이드용 실리카에 알루미나를 혼합한 슬러리를 이용함으로써, 상기 슬러리 간의 상호 인력에 의해 갭필 옥사이드막과 패드 질화막 간의 선택비가 감소된다. 따라서, 패턴 밀도가 높은 지역에서는 STI에서의 갭필 옥사이드막이 액티브영역에서의 패드 질화막보다 많이 연마되어 침식되는 현상이 발생되지 않는다.As described above, in the present invention, by using a slurry in which alumina is mixed with silica for silicon oxide without adding an additive, the selectivity ratio between the gap fill oxide film and the pad nitride film is reduced by mutual attraction between the slurries. Therefore, in the region where the pattern density is high, the gap fill oxide film in the STI is polished more than the pad nitride film in the active region and does not occur.
또한, 본 발명은 첨가제를 포함시키지 않음에 따라 생산 비용을 낮출 수 있다.In addition, the present invention can lower the production cost by including no additives.
기타, 본 발명은 그 요지를 일탈하지 않는 범위에서 다양하게 변경하여 실시할 수 있다. In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.
도 1 내지 도 3은 본 발명에 따른 화학적 기계적 연마용 슬러리를 이용하여 갭필 옥사이드막을 화학적 기계적 연마하는 공정을 보인 도면.1 to 3 are views showing a process of chemical mechanical polishing a gapfill oxide film using a chemical mechanical polishing slurry according to the present invention.
Claims (5)
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| KR20000011718A (en) * | 1998-07-15 | 2000-02-25 | 니시무로 타이죠 | A method of polishing semiconductor substrate and a method of making semiconductor device |
| KR20000076877A (en) * | 1999-03-17 | 2000-12-26 | 니시무로 타이죠 | Slurry for using cmp and cmp method |
| WO2001044395A1 (en) * | 1999-12-14 | 2001-06-21 | Rodel Holdings, Inc. | Polishing compositions for semiconductor substrates |
| JP2002069434A (en) * | 2000-08-31 | 2002-03-08 | Toshiba Corp | Slurry for chemical-mechanical polishing(cmp) and its preparing method, and manufacturing method for semiconductor device |
| US6464740B1 (en) * | 1998-06-11 | 2002-10-15 | Honeywell International Inc. | Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials |
| KR20030017352A (en) * | 2001-08-20 | 2003-03-03 | 삼성코닝 주식회사 | Polishing composition comprising silica-coated ceria powder |
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| US4997461A (en) * | 1989-09-11 | 1991-03-05 | Norton Company | Nitrified bonded sol gel sintered aluminous abrasive bodies |
| KR930004114A (en) * | 1991-08-07 | 1993-03-22 | 프랑크 엠 사죠벡 | Differential Bearing Cap Fasteners |
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| KR20000011718A (en) * | 1998-07-15 | 2000-02-25 | 니시무로 타이죠 | A method of polishing semiconductor substrate and a method of making semiconductor device |
| KR20000076877A (en) * | 1999-03-17 | 2000-12-26 | 니시무로 타이죠 | Slurry for using cmp and cmp method |
| WO2001044395A1 (en) * | 1999-12-14 | 2001-06-21 | Rodel Holdings, Inc. | Polishing compositions for semiconductor substrates |
| JP2002069434A (en) * | 2000-08-31 | 2002-03-08 | Toshiba Corp | Slurry for chemical-mechanical polishing(cmp) and its preparing method, and manufacturing method for semiconductor device |
| KR20030017352A (en) * | 2001-08-20 | 2003-03-03 | 삼성코닝 주식회사 | Polishing composition comprising silica-coated ceria powder |
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