KR100521257B1 - Liquid crystal display device having image adjusting means according to external light amount - Google Patents
Liquid crystal display device having image adjusting means according to external light amount Download PDFInfo
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- KR100521257B1 KR100521257B1 KR1019980010442A KR19980010442A KR100521257B1 KR 100521257 B1 KR100521257 B1 KR 100521257B1 KR 1019980010442 A KR1019980010442 A KR 1019980010442A KR 19980010442 A KR19980010442 A KR 19980010442A KR 100521257 B1 KR100521257 B1 KR 100521257B1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13318—Circuits comprising a photodetector
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/58—Arrangements comprising a monitoring photodetector
Abstract
본 발명에 따른 광 검출 소자는 외부 광원에 의한 광량 변화를 검출하기 위한 비정질 규소 패턴과 비정질 규소 패턴의 양쪽 끝에는 데이터 배선과 동일한 금속으로 형성되어 있는 전극 패턴과 비정질 규소 패턴 및 전극 패턴 사이에 형성되어 있는 오믹 접촉층으로 구성되어 있으며, 액정 표시 장치의 기판 위에 집적되어 있다. The photodetecting device according to the present invention is formed between an amorphous silicon pattern and an amorphous silicon pattern and an electrode pattern formed at the both ends of the amorphous silicon pattern and the amorphous silicon pattern for detecting a change in the amount of light caused by an external light source, the same metal as the data wiring It consists of an ohmic contact layer which exists, and is integrated on the board | substrate of a liquid crystal display device.
Description
본 발명은 액정 표시 장치에 관한 것이다.The present invention relates to a liquid crystal display device.
각종 정보를 표시하기 위한 표시 소자 중 액정 표시 장치는 노트북 PC의 모니터로, 캠코더, 차량용 LCD 등으로 그 사용 분야가 확대되고 있다.Among display elements for displaying various types of information, liquid crystal displays are used as monitors of notebook PCs, and camcorders, automotive LCDs, and the like.
일반적으로, 액정 표시 기판 위에 박막 트랜지스터를 집적시키는 공정에서는 주로 비정질 실리콘이 사용되고 있는데, 비정질 실리콘은 약 1.7 eV의 임계 전압을 가지며 결정화된 실리콘에 비해서 흡착 상수가 크기 때문에 광전자 공학 또는 광전지 소자 등에 널리 이용할 수 있다. 또한, 대면적을 값싸게 만들 수 있고, 낮은 온도에서 증착이 가능하다는 장점을 가지고 있다. 또, 비정질 실리콘은 가시 광선에 의해 효과적으로 정공, 전자를 발생시키므로 사람의 육안으로 느끼는 광량에 따라서 발생시키는 광 전류의 양이 변화될 수 있다. In general, amorphous silicon is mainly used in the process of integrating a thin film transistor on a liquid crystal display substrate. Since amorphous silicon has a threshold voltage of about 1.7 eV and an adsorption constant is larger than that of crystallized silicon, it is widely used in optoelectronic or photovoltaic devices. Can be. In addition, the large area can be made inexpensive, and the deposition can be performed at a low temperature. In addition, since amorphous silicon effectively generates holes and electrons by visible light, the amount of light current generated can be changed according to the amount of light felt by the human eye.
이러한 특성은 외부 광량에 따른 화상의 조절에 이용될 수 있다.This characteristic can be used to adjust the image according to the amount of external light.
종래에는 외부 광량에 따른 화상의 조절을 위해 별도의 화상 조절용 장치를 액정 표시 장치의 외부에 부착하였기 때문에, 장치가 복잡하고 무거우며 가격도 비싼 단점이 있다.Conventionally, since a separate image control device is attached to the outside of the liquid crystal display device to adjust an image according to the external light amount, the device is complicated, heavy, and expensive.
본 발명은 액정 표시 장치의 제조 공정을 통해 기판 위에 화상 조절 수단을 집적하여 액정 표시 장치의 경량화, 저가격화 및 단순화를 실현하는 것이 과제이다. SUMMARY OF THE INVENTION An object of the present invention is to integrate an image control means on a substrate through a manufacturing process of a liquid crystal display device, thereby realizing light weight, low cost, and simplicity of the liquid crystal display device.
이러한 과제를 해결하기 위한 본 발명에 따른 액정 표시 장치에서는 박막 트랜지스터 및 배선 등이 형성되어 있는 액정 표시 기판 위에 광 검출 소자가 형성되어 있어서 외부 광원에 의해 광 전류를 유도하며, 유도된 전류는 전류량 변화에 따라 화면 구동을 조절하는 회로로 전달된다.In the liquid crystal display according to the present invention for solving this problem, a photodetecting element is formed on a liquid crystal display substrate on which a thin film transistor, a wiring, etc. are formed to induce a photo current by an external light source, and the induced current changes in the amount of current Is passed to the circuit to adjust the screen drive accordingly.
이처럼, 기판 내에 외부 광원의 변화를 검출하기 위한 소자를 집적함으로써 액정 표시 장치를 경량화할 수 있다.As such, the liquid crystal display device can be reduced in weight by integrating an element for detecting a change in the external light source in the substrate.
그러면, 첨부한 도면을 참고로 하여 본 발명의 실시예에 따른 액정 표시 장치에 대하여 본 발명이 속하는 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세하게 설명한다.Next, a liquid crystal display according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.
도 1은 기판 내에 집적된 광 도전체를 이용하여 광량 증가를 감지하는 구조에 관한 것이다.1 relates to a structure for detecting an increase in light quantity using an optical conductor integrated in a substrate.
게이트 전극, 게이트 절연막, 소스 및 드레인 전극, 비정질 규소 등의 반도체층으로 이루어진 박막 트랜지스터, 게이트 및 데이터 배선, 화소 전극 등이 형성되어 있는 액정 표시 기판(10) 위에 광 검출 소자가 형성되어 있고, 이 광 검출 소자는 기판(10)의 가장자리에 부착된 구동 IC와 전기적으로 연결되어 있다.A photodetecting element is formed on the liquid crystal display substrate 10 on which thin film transistors made of semiconductor layers such as gate electrodes, gate insulating films, source and drain electrodes, and amorphous silicon, gate and data wirings, and pixel electrodes are formed. The photodetecting device is electrically connected to the driving IC attached to the edge of the substrate 10.
도 1에 도시한 바와 같이, 본 발명에 따른 광 검출 소자의 구조에서는 게이트 절연막(30) 위에 검출 소자용 비정질 규소 패턴(40)이 형성되어 있고, 비정질 규소 패턴(40)과 양쪽 끝에서 중첩하는 전극 패턴(60)이 데이터 배선과 동일한 금속으로 형성되어 있으며, 비정질 규소 패턴(40)과 전극 패턴(60) 사이에는 오믹 접촉층(50)이 형성되어 있다. 전극 패턴(60) 위에는 보호막(70)이 덮여 있으며, 비정질 규소 패턴(40) 상부의 보호막(70)은 제거되어 있어서 비정질 규소 패턴(40)이 외부로 드러나 있다.As shown in FIG. 1, in the structure of the photodetecting device according to the present invention, an amorphous silicon pattern 40 for a detection element is formed on the gate insulating film 30, and overlaps the amorphous silicon pattern 40 at both ends. The electrode pattern 60 is formed of the same metal as the data line, and an ohmic contact layer 50 is formed between the amorphous silicon pattern 40 and the electrode pattern 60. The protective layer 70 is covered on the electrode pattern 60, and the protective layer 70 on the amorphous silicon pattern 40 is removed to expose the amorphous silicon pattern 40 to the outside.
자연광이나 인공광 등 외부 광원이 액정 표시 장치에 인가되면 표시 장치 내에 집적되어 있는 도 1과 같은 광 도전체가 작동하게 된다. 이를 좀 더 설명하면 다음과 같다.When an external light source such as natural light or artificial light is applied to the liquid crystal display, the optical conductor as shown in FIG. 1 integrated in the display device operates. If this is explained further, it is as follows.
hν(또는 h/λ)의 에너지를 가지는 외부 광원이 반도체인 비정질 규소 패턴(40)에 도달하면, 표면에서의 에너지 전이가 일어나 정공 및 전자들이 발생되어서 비정질 규소 패턴(40) 내의 전도도가 증가된다. 이러한 현상은 광원의 에너지 hν(또는 h/λ)가 오믹 접촉층(50)과 비정질 규소 패턴(40) 사이의 일함수 값과 비슷하거나 더 클 때 일어나는데, 비정질 규소의 경우 λ= 0.72μm 이하의 광원에 대해서 반응하므로 가시광선 영역에서 광 전류가 발생된다. 보통, 광원에 의해 유도되는 전류의 양은 외부 광원의 세기와 관계한다.When an external light source having an energy of hv (or h / λ) reaches the amorphous silicon pattern 40 which is a semiconductor, energy transfer occurs at the surface to generate holes and electrons, thereby increasing conductivity in the amorphous silicon pattern 40. . This phenomenon occurs when the energy hν (or h / λ) of the light source is similar to or greater than the work function value between the ohmic contact layer 50 and the amorphous silicon pattern 40, with λ = 0.72 μm or less for amorphous silicon. Since it reacts to the light source, light current is generated in the visible light region. Usually, the amount of current induced by the light source is related to the intensity of the external light source.
광 도전체가 외부 광원에 의해 작동되면, 광 도전체인 비정질 규소 패턴(40)과 접해있는 전극 패턴(60)에 전위(V1)를 가해주어 유도된 전류를 기판(10) 가장자리에 부착되어 있는 IC 내로 전달한다.When the photoconductor is operated by an external light source, the potential V1 is applied to the electrode pattern 60 in contact with the amorphous silicon pattern 40 which is the photoconductor, and the induced current is introduced into the IC attached to the edge of the substrate 10. To pass.
구동 IC 내에는 화면 구동을 보정하기 위한 회로가 구비되어 있어서, 외부 광원의 세기에 따라 유도된 전류의 양의 차이에 따라 액정 표시 장치의 화면 구동을 달리하거나 보정한다. COG(chip-on glass) 방식인 경우, 광 다이오드 작동을 위해 추가된 단자가 이러한 역할을 수행한다.In the driving IC, a circuit for correcting the screen driving is provided, and the screen driving of the liquid crystal display is changed or corrected according to the difference in the amount of current induced according to the intensity of the external light source. In the case of chip-on glass (COG), an additional terminal for photodiode operation plays this role.
광 검출 소자를 이루는 비정질 규소 패턴(40), 전극 패턴(60) 등은 액정 표시 장치의 배선 형성 과정에서 동시에 이루어질 수 있으므로 별도의 공정 없이 쉽게 형성할 수 있다.The amorphous silicon pattern 40, the electrode pattern 60, and the like forming the photodetecting device may be simultaneously formed in the wiring forming process of the liquid crystal display, and thus may be easily formed without a separate process.
도 2는 기판 내에 집적된 쇼트키 다이오드(schottkey diode) 구조를 이용하여 광량 증가를 감지하는 구조에 관한 것이다.2 relates to a structure for detecting an increase in light quantity using a schottkey diode structure integrated in a substrate.
도 2에 도시한 바와 같이, 기판(10) 위에 게이트 배선용 금속으로 금속 패턴(20)이 형성되어 있고 금속 패턴(20) 위에는 비정질 규소 패턴(40)이 형성되어 있다. 즉, 비정질 규소 패턴(40)과 게이트 금속 패턴(20) 사이에 쇼트키 장벽이 형성되어 있다.As shown in FIG. 2, a metal pattern 20 is formed of a metal for gate wiring on the substrate 10, and an amorphous silicon pattern 40 is formed on the metal pattern 20. That is, a Schottky barrier is formed between the amorphous silicon pattern 40 and the gate metal pattern 20.
비정질 규소 패턴(40) 위에는 보호막(70)이 덮여 있으며, 보호막(70)에는 비정질 규소 패턴(40)을 드러내는 개구부가 뚫려 있다. ITO 패턴(80)이 개구부를 통해 비정질 규소 패턴(40)과 접촉하고 있는데, 두 패턴(80, 40)은 오믹 접촉되어 있다.The protective film 70 is covered on the amorphous silicon pattern 40, and an opening through which the amorphous silicon pattern 40 is exposed is formed in the protective film 70. The ITO pattern 80 is in contact with the amorphous silicon pattern 40 through the opening, and the two patterns 80 and 40 are in ohmic contact.
이러한 구조의 광 검출 소자에서는 비정질 규소 패턴(40)과 게이트 금속 패턴(20) 사이의 일함수보다 큰 에너지를 가지는 외부 광원이 전달되면, 비정질 규소 패턴(40)과 게이트 금속 패턴(20) 사이에 쇼트키 장벽이 허물어지면서 광 전류가 유도된다. ITO 패턴(80)과 금속 패턴(20) 사이에 역전압(V2)을 가하면 공핍 영역이 증가되어 작은 세기의 외부 광원에도 민감하게 반응하게 된다.In the photodetecting device having such a structure, when an external light source having an energy greater than a work function between the amorphous silicon pattern 40 and the gate metal pattern 20 is transferred, the amorphous silicon pattern 40 and the gate metal pattern 20 are transferred. As the Schottky barrier collapses, a photocurrent is induced. When the reverse voltage V2 is applied between the ITO pattern 80 and the metal pattern 20, the depletion region is increased to react sensitively to external light sources of small intensity.
이와 같이 유도된 광 전류는 제1 실시예에서와 마찬가지로 유도 전류량에 따라 화상을 보정하는 회로가 내장된 IC 내로 전달된다. The photocurrent induced in this way is transferred into the IC in which a circuit for correcting an image in accordance with the induced current amount is incorporated as in the first embodiment.
이상에서와 같이, 액정 표시 장치용 기판에 외부 광원에 의한 광 전류를 유도하는 광 도전체나 쇼트키 다이오드 등의 광 검출 소자를 집적하고, 이 소자를 광 전류 변화량에 따른 화상 조절 회로를 가진 IC와 연결함으로써, 외부 부착용 화상 조절 장치를 사용하는 종래에 비해 액정 표시 장치를 경량화, 저가격화, 단순화할 수 있다.As described above, a photodetector such as a photoconductor or a Schottky diode, which induces a photocurrent by an external light source, is integrated on a substrate for a liquid crystal display device. By connecting, the liquid crystal display device can be made lighter in weight, lower in price, and simplified in comparison with the conventional use of the external image control device.
도 1은 본 발명의 제1 실시예에 따른 액정 표시 장치 내 광 검출자의 단면도이고,1 is a cross-sectional view of a light detector in a liquid crystal display according to a first embodiment of the present invention;
도 2는 본 발명의 제2 실시예에 따른 액정 표시 장치 내 광 검출자의 단면도이다.2 is a cross-sectional view of a light detector in a liquid crystal display according to a second exemplary embodiment of the present invention.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH03249622A (en) * | 1990-02-28 | 1991-11-07 | Toshiba Corp | Liquid crystal display device |
| JPH07325319A (en) * | 1994-05-31 | 1995-12-12 | Sharp Corp | Liquid crystal display device |
| JPH0943575A (en) * | 1995-08-03 | 1997-02-14 | Canon Inc | Display device driving method |
| KR970071063A (en) * | 1996-04-24 | 1997-11-07 | 김광호 | Gate-off voltage level automatic control device of TFT |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH03249622A (en) * | 1990-02-28 | 1991-11-07 | Toshiba Corp | Liquid crystal display device |
| JPH07325319A (en) * | 1994-05-31 | 1995-12-12 | Sharp Corp | Liquid crystal display device |
| JPH0943575A (en) * | 1995-08-03 | 1997-02-14 | Canon Inc | Display device driving method |
| KR970071063A (en) * | 1996-04-24 | 1997-11-07 | 김광호 | Gate-off voltage level automatic control device of TFT |
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