KR100491965B1 - Dielectric material using reactive dendrimer and starburst compound and process for manufacturing thin film formed of the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low dielectric material and a method for manufacturing the same, wherein the low dielectric material includes a dendrimer or a starburst having an organosilane having an organic substituent of Formula 1 A method of synthesizing a dielectric material and a method of manufacturing an ultra low dielectric film using the low dielectric material is provided.

[Formula 1]

(R ¹ O) _m (R ² ) _n SiR ³ .

Wherein m + n = 3 and m is 1, 2 or 3, R ¹ and R ² are independently of each other a C ₁ -C ₁₀ aliphatic alkyl group, R ³ is vinyl, halogen, alkoxy, nitro, nitrile, It is a hydrocarbon which has a terminal amine, an acryloxy, or an epoxy group substituent.

Description

Dielectric material using reactive dendrimer and starburst compound and process for manufacturing thin film formed of the same}

The present invention relates to a low dielectric material and a method for manufacturing an ultra low dielectric thin film using the same, and more particularly, a low dielectric material capable of manufacturing high performance integrated circuits used in key components of information transmission, information processing, and information storage devices. And it relates to a method for producing an ultra low dielectric thin film using the same.

In recent years, the electronic industry continues to increase the density of integrated circuits having a multilayer structure, for example, memory and logic chips, thereby increasing the performance of the circuit and reducing costs. To achieve this goal, we are continually reducing our chip size and at the same time doubling our efforts to develop new low-k materials that can lower the dielectric constant of insulators. Currently used dielectric material is silicon dioxide with a dielectric constant of approximately 3.5 to 4.0. The material has strong physical properties and thermal stability that can withstand the various chemical and thermal processes involved in the semiconductor manufacturing process.

However, recently, high performance integrated circuits having a multilayered structure need to select copper having excellent conductivity as a conductor and having a relatively low value, and a new material capable of satisfying a dielectric constant of 2.5 or less as a low dielectric material. As integrated circuits become smaller in size, signal delays and crosstalk phenomena cause significant obstacles in improving device performance. In order to solve the signal delay and crosstalk problems, research and development of dielectric materials having low dielectric properties are being actively conducted.

 In order to solve the above problems, a lot of researches for the development of dielectric materials have been conducted worldwide for silicate-based and nanoporous silicate-based, aromatic polymers, fluorinated aromatic polymers, and organic-inorganic composite materials. The development of ultra-low dielectric materials, in addition to the realization of dielectric constant of 2.5 or less, the thermal stability, mechanical properties, chem-mech polishing suitability, etching characteristics, interfacial adhesion and electrical characteristics required for semiconductor manufacturing process and semiconductor durability The back should be secured.

Therefore, the technical problem to be achieved by the present invention is to provide a low dielectric material having excellent dielectric properties and low dielectric constant required for semiconductor manufacturing processes and semiconductor durability.

Another technical problem to be achieved by the present invention is to propose a method of manufacturing such a low dielectric material and a method of manufacturing an ultra low dielectric thin film using the same.

The present invention provides a dielectric material including a dendrimer or starburst having an organosilane terminal having an organosilane having an organic substituent of Formula 1 to achieve the above technical problem:

[Formula 1]

(R ¹ O) _m (R ² ) _n SiR ³ .

Wherein m + n = 3 and m is 1, 2 or 3, R ¹ and R ² are independently of each other a C ₁ -C ₁₀ aliphatic alkyl group, R ³ is vinyl, halogen, alkoxy, nitro, nitrile, It is a C1-C10 alkyl group which has an amine, an acryloxy, or an epoxy group substituent at the terminal.

The dendrimer is polyamidoamine (poly (amidoamine)) or polypropyleneimine

(polypropyleneimine)) It is preferable that it is a dendrimer.

The starburst is preferably a poly (ε-carprolactone) starburst.

R ¹ and R ² are each independently selected from methyl, ethyl, propyl, butyl, pentyl, isopropyl and isobutyl groups.

The silane compound having the organic substituent is 3-acryloxypropyl trimethoxysilane, 3-acryloxypropyl methyldimethoxysilane, 3-acryloxypropyl dimethylmethoxysilane ( 3-acryloxypropyl dimethylmethoxysilane, 3-acryloxypropyl methylbis (trimethylsiloxy) silane, 3-glycidoxypropyl trimethoxysilane, 3-glycidoxypropyl trimethoxysilane 3-glycidoxypropyl methyldimethoxysilane, 3-glycidoxypropyl methyldiethoxysilane, 3-glycidoxypropyl methyldiethoxysilane, 3-gylcidoxypropyl dimethylethoxysilane or 3-glycidoxypropyl methyldimethoxysilane Preference is given to glycidoxypropyl methylbis (trimethylsiloxy) silane (3-glycidoxypropyl methylbis (trimethylsiloxy) silane).

The polyamidoamine or polypropyleneimine dendrimer is polypropyleneimine tetraamine (DAB-Am-4, polypropyleneimine tetraamine), polypropyleneimine octaamine (DAB-Am-8, polypropyleneimine octaamine) or polypropyleneimine hexadecaamine (DAB -Am-16, polypropyleneimine hexadecaamine).

The poly (ε-caprolactone) starburst is a 3-, 4- or 6-poly (ε-caprolactone) starburst (3-, 4- or 6-arm poly (ε-carprolactone starburst) having an aliphatic core. Or 3-, 4-, or 6-poly (ε-caprolactone) starburst with an aromatic core.

Referring to FIG. 1, the dendrimer and the starburst have an amidoamine dendrimer or a starburst polymer core having an amine or hydroxy group as a terminal, and a silage of the silane compound having a reactive end group together with an equivalent ratio. After mixing in a solvent such as methanol, ethanol, tetrahydrofuran, methyl ethyl ketone, methyl isobutyl ketone, or dimethyl formamide, and then reacting by stirring at room temperature in a nitrogen atmosphere, the solvent and reaction by-products are removed and the pressure is reduced at room temperature. It can be obtained by drying.

The silane compound is characterized in that it has a reactive end group capable of forming nanopores, the dendrimer or starburst has a basic chemical structure of aliphatic esters, ethers and amides, the overall molecular shape is spherical and the size It refers to a compound designed and synthesized by adjusting the number and the molecular weight of the branches to be 1-100nm and pyrolysis in the range of 200-450 ^o C. The molecular weight preferably has a value in the range of 100 to 10,000 and the terminal is composed of an amine or alcohol group.

Method for producing a low dielectric material according to the present invention comprises the steps of a) mixing a dendrimer or starburst having a silane compound having an organic substituent terminal and tetraalkoxysilane in a weight ratio of 9.9: 0.1 to 0.1: 9.9, b) the whole Adding 0.1 to 1.0 equivalents of distilled water relative to the alkoxy concentration to perform a sol-gel reaction in a solvent.

Hydrochloric acid or ammonia corresponding to 0.1-0.5 equivalents of the distilled water used in step b) may be further added and mixed as an acid or base catalyst, followed by sol-gel reaction in a solvent.

The tetraalkoxysilane is preferably tetramethoxysilane (TMOS) or tetraethoxysilane (TEOS).

The solvent is preferably methanol, ethanol, tetrahydrofuran (THF), dimethylformamide (DMF), methyl ethyl ketone or methyl isobutyl ketone (MIBK).

In another aspect, the present invention provides a method for producing an ultra-low dielectric film having nano-pores using the low dielectric material (Fig. 2).

The low dielectric material prepared as in Example 1-6 was mixed with tetramethoxysilane or tetraethoxysilane to a weight ratio of 10: 0 to 0.1: 9.9, dissolved in an appropriate amount of methyl isobutyl ketone solvent, and then at room temperature. Stir vigorously and slowly add an appropriate amount of distilled water from 0.1 to 1.0 equivalent to the alkoxy concentration in the solution. Hydrochloric acid or ammonia corresponding to 0.1-0.5 equivalents of distilled water used together can be used together as an acid or base catalyst, respectively. After reacting for about 2 hours, the solution is preferably refrigerated and sealed until the concentration of the solvent (MIBK) is added or evaporated before use. Moderate concentrations of low dielectric material solutions can be removed using a 0.2 μm polytetrafluoroethylene (PTFE) filter on a clean silicon substrate.

The preparation of the ultra low dielectric thin film may include a) applying the low dielectric material to a substrate, b) drying at 50 ^° C. for 3-5 hours, and c) slowly decreasing the temperature from 250 ^° C. to 300 ^° C. in a nitrogen atmosphere. And curing for 2 hours, d) gradually increasing the temperature to 400 ^° C.-500 ^° C., then pyrolyzing for 2 hours to form nanopores, and e) slowly lowering the temperature to room temperature.

An integrated circuit chip set device can be manufactured by the ultralow dielectric film manufacturing method.

Hereinafter, the present invention will be described in more detail with reference to Examples. The following examples are provided by way of example to help understanding of the present invention, but the scope of the present invention is not limited thereto.

<Example 1>

Synthesis of Dendrimer Polymer (A1) Having Reactive Silane as Substituent

Polypropyleneimine octaamine dendrimer (DAB-Am-8, Aldrich) was dried in vacuo at 60 ^° C. for one day. 10 mL of anhydrous methanol (anhydrous MeOH) was added to a reactor in a dry nitrogen atmosphere, and 1.94 g (1.50 mmol) of DAB-Am-8 dendrimer was added thereto, followed by stirring well. 5.62 g (23.98 mmol) of 3-acryloxypropyl trimethoxysilane was slowly added while maintaining the temperature of the reactor at 25 ^° C., and then reacted for 24 hours.

When the reaction was terminated, the methanol was first dried with blowing nitrogen, and then nuclear magnetic resonance spectrum (NMR) was used to identify the product (A1) and calculate the amount thereof. The product was made almost quantitative and yielded 7.52 g.

¹ H-NMR (δ, TMS): 3.99 (t, 32H, methylene), 3.53 (s, 144H, methoxy), 2.73 (t, 16H, methylene), 2.40 (m, 36H, methylene), 1.67 (m, 56H, methylene), 1.35 (m, 4H, methylene), 0.63 (m, 32H, methylene).

<Example 2>

Synthesis of Dendrimer Polymer (A2) Having Reactive Silane as Substituent

The polypropyleneimine octaamine dendrimer was dried at 60 ^° C. in vacuo for one day. 10 mL of anhydrous methanol was added to a reactor in a dry nitrogen atmosphere, and 1.94 g (1.50 mmol) of DAB-Am-8 dendrimer was added thereto, followed by stirring well. 5.67 g (23.99 mmol) of 3-glycidoxypropyl trimethoxysilane was slowly added while maintaining the temperature of the reactor at 25 ^° C., followed by reaction for 24 hours.

At the end of the reaction, methanol was first dried by blowing dry nitrogen and then completely dried under vacuum. The yield was obtained by weighing the product, and the amount of product (A2) was calculated using nuclear magnetic resonance spectra. The product was made almost quantitative and yielded 7.59 g.

<Example 3>

Synthesis of Starburst Compound (B1) Having Reactive Silane as Substituent

Four kinds of poly (ε-caprolactone) starburst compound (4-arm PCL) were dried in vacuo at 60 ^° C. for one day. 10 mL of anhydrous methanol was added to a reactor in a dry nitrogen atmosphere. 4.35 g (1.00 mmol) of 4-arm PCL starburst compound was added thereto, followed by stirring well. 0.94 g (4.00 mmol) of 3-acryloxypropyl trimethoxysilane was slowly added while maintaining the temperature of the reactor at 25 ^° C., followed by reaction for 24 hours.

When the reaction was terminated, methanol was first dried by blowing dry nitrogen, and then completely dried under vacuum. The yield was obtained by weighing the product, and the amount of product (B1) was calculated using nuclear magnetic resonance spectrum. The product was made almost quantitative and yielded 5.25 g.

¹ H-NMR (δ, TMS): 4.0 (m, methylene), 3.54 (s, methoxy), 2.28 (m, methylene), 1.83 (m, methylene), 1.62 (m, methylene), 1.38 (m, methylene ), 0.65 (m, methylene).

<Example 4>

Synthesis of Starburst Compound (B2) Having Reactive Silane as Substituent

The four poly (ε-caprolactone) starburst compounds were dried in vacuo at 60 ^° C. for one day. 10 mL of anhydrous methanol was added to a reactor in a dry nitrogen atmosphere. 4.35 g (1.00 mmol) of 4-arm PCL starburst compound was added thereto, followed by stirring well. 0.94 g (4.00 mmol) of 3-glycidoxypropyl trimethoxysilane was slowly added while maintaining the temperature of the reactor at 25 ^° C., followed by reaction for 24 hours.

When the reaction was terminated, methanol was first dried by blowing dry nitrogen, and then completely dried under vacuum. The yield was obtained by measuring the weight of the product, and the nuclear magnetic resonance spectrum was used to calculate the amount of the product (B2). The product was made almost quantitative and yielded 5.24 g.

Example 5

Synthesis of Starburst Compound (B3) Having Reactive Silane as Substituent

Six-branched poly (ε-caprolactone) starburst compound (6-arm PCL) was dried in vacuo at 60 ^° C. for one day. 10 mL of anhydrous methanol was added to a reactor in a dry nitrogen atmosphere, 4.19 g (1.00 mmol) of 6-arm PCL starburst compound was added thereto, followed by stirring well. 1.405 g (6.00 mmol) of 3-acryloxypropyl trimethoxysilane was slowly added while maintaining the temperature of the reactor at 25 ^° C., and reacted for 24 hours.

At the end of the reaction, methanol was first dried by blowing dry nitrogen and then completely dried under vacuum. The yield was obtained by weighing the product, and the amount of product (B3) was calculated using nuclear magnetic resonance spectra. The product was made almost quantitative and yielded 5.56 g.

<Example 6>

Synthesis of Starburst Compound (B4) Having Reactive Silane as Substituent

Six-branched poly (ε-caprolactone) starburst compound (6-arm PCL) was dried in vacuo at 60 ^° C. for one day. 10 mL of anhydrous methanol was added to a reactor in a dry nitrogen atmosphere, 4.19 g (1.00 mmol) of 6-arm PCL starburst compound was added thereto, followed by stirring well. 1.42 g (6.00 mmol) of 3-glycidoxypropyl trimethoxysilane was slowly added while maintaining the temperature of the reactor at 25 ^° C., followed by reaction for 24 hours.

At the end of the reaction, methanol was first dried by blowing dry nitrogen and then completely dried under vacuum. The yield was obtained by weighing the product, and the amount of product (B4) was calculated using nuclear magnetic resonance spectra. The product was made almost quantitative and yielded 5.60 g.

<Example 7>

Material of ultra-low dielectric film prepared from dendrimer compound (A1) having reactive silane as a substituent

1.05 g of the dendrimer compound A1 prepared in Example 1 was mixed with 0.45 g of tetraethoxysilane, dissolved in 15 mL of methyl isobutyl ketone solvent, vigorously stirred at room temperature, and 0.3 g of distilled water was slowly added thereto. After reacting for about 10 minutes, dry nitrogen was blown to the solution and evaporated until the weight of A1 and TEOS was 15 weight ratio of the total solution. The low dielectric material solution thus prepared was applied to a clean silicon substrate after removing impurities using a 0.2 μm polytetrafluoroethylene (PTFE) filter. The thickness of the low dielectric material film applied to the substrate was controlled by controlling the concentration of the solution and the spin coating speed. The prepared thin film was dried at 50 ^° C. for 5 hours and then cured for 2 hours by heating the temperature up to 300 ^° C. at a rate of 2 ^° C./min in a nitrogen atmosphere. Then, the temperature was increased to 450 ^° C. at a rate of 2 ^° C./min, and pyrolyzed for 2 hours to form nanopores. Since the temperature was gradually lowered to room temperature, an ultra low dielectric thin film material was prepared.

<Example 8>

Material of ultra-low dielectric film prepared from dendrimer compound (A2) having reactive silane as a substituent

1.05 g of the dendrimer compound A2 prepared in Example 2 was mixed with 0.45 g of tetraethoxysilane, dissolved in 15 mL of methyl isobutyl ketone solvent, vigorously stirred at room temperature, and 0.3 g of distilled water was slowly added thereto. After reacting for about 10 minutes, dry nitrogen was blown to the solution and evaporated until the weight of A2 and TEOS was 15 weight ratio of the total solution. The low dielectric material solution thus prepared was applied to a clean silicon substrate after removing impurities using a 0.2 μm polytetrafluoroethylene filter. The thickness of the low dielectric material film applied to the substrate was controlled by controlling the concentration of the solution and the spin coating speed. The thin film was dried at 50 ^° C. for 5 hours, and then cured for 2 hours by heating the temperature up to 300 ^° C. at a rate of 2 ^° C./min in a nitrogen atmosphere. And again heated to a temperature of 450 ^° C at a rate of 2 ^° C / min, and then pyrolyzed for 2 hours to form nanopores. Since the temperature was gradually lowered to room temperature, an ultra low dielectric thin film material was prepared.

Example 9

Material of ultra-low dielectric film prepared from starburst compound (B1) having reactive silane as substituent

1.05 g of the starburst compound B1 prepared in Example 3 was mixed with 0.45 g of tetraethoxysilane and dissolved in 15 mL of methyl isobutyl ketone solvent. Then, 0.3 g of distilled water was slowly added while stirring vigorously at room temperature. After reacting for about 10 minutes, dry nitrogen was blown to the solution and evaporated until the weight of B1 and TEOS was 15 weight ratio of the total solution. The low dielectric material solution thus prepared was applied to a clean silicon substrate after removing impurities using a 0.2 μm polytetrafluoroethylene filter. The thickness of the low dielectric material film applied to the substrate was controlled by controlling the concentration of the solution and the spin coating speed. The thin film was dried at 50 ^° C. for 5 hours and then cured for 2 hours by heating the temperature to 300 ^° C. at a rate of 2 ^° C./min in a nitrogen atmosphere. Then, the temperature was increased to 450 ^° C. at a rate of 2 ^° C./min, and pyrolyzed for 2 hours to form nanopores. Since the temperature was gradually lowered to room temperature, an ultra low dielectric thin film material was prepared.

<Example 10>

Material of ultra-low dielectric film prepared from starburst compound (B2) having reactive silane as substituent

1.05 g of Starburst Compound B2 prepared in Example 4 was mixed with 0.45 g of tetraethoxysilane, dissolved in 15 mL of methyl isobutyl ketone solvent, and stirred slowly at room temperature, and 0.3 g of distilled water was slowly added thereto. After reacting for about 10 minutes, dry nitrogen was blown to the solution and evaporated until the weight of B2 and TEOS was 15% by weight of the total solution. The low dielectric material solution thus prepared was applied to a clean silicon substrate after removing impurities using a 0.2 μm polytetrafluoroethylene filter. The thickness of the low dielectric material film applied to the substrate was controlled by controlling the concentration of the solution and the spin coating speed. The thin film was dried at 50 ^° C. for 5 hours and then cured for 2 hours by heating the temperature to 300 ^° C. at a rate of 2 ^° C./min in a nitrogen atmosphere. Then, the temperature was increased to 450 ^° C. at a rate of 2 ^° C./min, and pyrolyzed for 2 hours to form nanopores. Since the temperature was gradually lowered to room temperature, an ultra low dielectric thin film material was prepared.

<Example 11>

Material of ultra-low dielectric film prepared from starburst compound (B3) having reactive silane as substituent

1.05 g of the starburst compound B3 prepared in Example 5 was mixed with 0.45 g of tetraethoxysilane and dissolved in 15 mL of methyl isobutyl ketone solvent. Then, 0.3 g of distilled water was added slowly with vigorous stirring at room temperature. After reacting for about 10 minutes, dry nitrogen was blown to the solution and evaporated until the weight of B3 and TEOS was 15% by weight of the total solution. The low dielectric material solution thus prepared was applied to a clean silicon substrate after removing impurities using a 0.2 μm polytetrafluoroethylene filter. The thickness of the low dielectric material film applied to the substrate was controlled by controlling the concentration of the solution and the spin coating speed. The thin film was dried at 50 ^° C. for 5 hours and then cured for 2 hours by heating the temperature to 300 ^° C. at a rate of 2 ^° C./min in a nitrogen atmosphere. Then, the temperature was increased to 450 ^° C. at a rate of 2 ^° C./min and pyrolyzed for 2 hours to form nanopores. Since the temperature was gradually lowered to room temperature, an ultra low dielectric thin film material was prepared.

<Example 12>

Material of ultra-low dielectric film prepared from starburst compound (B4) having reactive silane as substituent

1.05 g of the starburst compound B4 prepared in Example 6 was mixed with 0.45 g of tetraethoxysilane, dissolved in 15 mL of methyl isobutyl ketone solvent, and vigorously stirred at room temperature, and 0.3 g of distilled water was slowly added thereto. After reacting for about 10 minutes, dry nitrogen was blown to the solution and evaporated until the weight of B4 and TEOS was 15% by weight of the total solution. The low dielectric material solution thus prepared was applied to a clean silicon substrate after removing impurities using a 0.2 μm polytetrafluoroethylene filter. The thickness of the low dielectric material film applied to the substrate was controlled by controlling the concentration of the solution and the spin coating speed. The thin film was dried at 50 ^° C. for 5 hours, and then cured for 2 hours by heating the temperature up to 300 ^° C. at a rate of 2 ^° C./min in a nitrogen atmosphere. Then, the temperature was increased to 450 ^° C. at a rate of 2 ^° C./min, and then pyrolyzed for 2 hours to form nanopores. Since the temperature was gradually lowered to room temperature, an ultra low dielectric thin film material was prepared.

 As a result of measuring the dielectric constant using the dielectric materials of Examples 7 to 12, a value of 1.80 to 2.50 was shown, and thermal stability was excellent at 500 ° C or higher.

In the dielectric material according to the present invention, a dendrimer or a starburst and a tetraalkoxysilane mixed composition having a reactive silane compound as a terminal is prepared, a thin film is prepared on a substrate, and then nanopores are formed by pyrolysis. Ultra low dielectric constant of 2.5 or less dielectric constant can be realized.

1 schematically shows the synthesis of dendrimers or starburst compounds with reactive silanes as substituents.

2 schematically shows the manufacturing process of an ultra low dielectric thin film having nanopores.

Claims (13)

3-acryloxypropyl trimethoxysilane, 3-acryloxypropyl methyldimethoxysilane, 3-acryloxypropyl dimethylmethoxysilane, 3-acryloxypropyl methylbis (trimethylsiloxy) silane having the following formula (1), 3-glycidoxypropyl trimethoxysilane, 3-glycidoxypropyl methyldimethoxysilane, 3-glycidoxypropyl methyldiethoxysilane, 3-glycidoxypropyl dimethylethoxysilane and 3-glycidoxypropyl Polyamidoamine or polypropyleneimine dendrimer having a silane compound having an organic substituent selected from the group consisting of methylbis (trimethylsiloxy) silane, or poly (ε-caprolactone) starburst and tetraalkoxysilane 99: 1 Composition for forming a low-k dielectric thin film of an integrated circuit comprising a weight ratio of 1:99. [Formula 1] (R ¹ O) _m (R ² ) _n SiR ³ . Wherein m + n = 3 and m is 1, 2 or 3, R ¹ and R ² are each independently selected from methyl, ethyl, propyl, butyl, pentyl, isopropyl and isobutyl groups, R ³ is an alkyl group having 1 to 10 carbon atoms having a vinyl, halogen, alkoxy, nitro, nitrile, amine, acryloxy or epoxy group substituent at the terminal. delete delete delete delete The low dielectric thin film of claim 1, wherein the polyamidoamine or polypropyleneimine dendrimer is selected from the group consisting of polypropyleneimine tetraamine, polypropyleneimine octaamine, and polypropyleneimine hexadecaamine. Formation composition. The poly (ε-caprolactone) starburst of claim 1, wherein the poly (ε-caprolactone) starburst is a 3-, 4-, 6-poly (ε-caprolactone) starburst having an aliphatic core, 3-, 4- having an aromatic core And 6-poly (ε-caprolactone) starburst, the composition for forming a low-k dielectric thin film of an integrated circuit. a) mixing a dendrimer or starburst having a silane compound having an organic substituent as a terminal and tetraalkoxysilane in a weight ratio of 99: 1 to 1:99; And b) sol-gel reaction in a solvent by adding 0.1 to 1.0 equivalents of distilled water with respect to the total alkoxy concentration of the composition for forming a low dielectric thin film of the integrated circuit according to any one of claims 1 to 7. Manufacturing method. The method of claim 8, further comprising the step of sol-gel reaction in a solvent by adding and mixing hydrochloric acid or ammonia corresponding to 0.1 to 0.5 equivalents of the distilled water used in step b) as an acid or a base catalyst, respectively. How to. The method of claim 8, wherein the tetraalkoxysilane is tetramethoxysilane or tetraethoxysilane. The method of claim 8, wherein the solvent is methanol, ethanol, tetrahydrofuran, dimethylformamide, methyl ethyl ketone or methyl isobutyl ketone. a) applying a composition according to any one of claims 1 to 7 to a substrate; b) drying at 50 ° C. for 3-5 hours; c) slowly heating to a temperature of 250 ° C. to 300 ° C. in a nitrogen atmosphere to cure for 2 hours to form a thin film on the substrate; d) slowly heating to 400 ° C. to 500 ° C., followed by pyrolysis for 2 hours to form nanopores in the thin film; And e) a method of manufacturing a low dielectric thin film of an integrated circuit comprising the step of gradually cooling to room temperature. An integrated circuit comprising a low dielectric thin film manufactured by the method of claim 12.