KR100504431B1 - Low dielectric film formation method using vapor phase silicification process - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel low dielectric constant compound used for the purpose of insulation between metal wirings, insulation between metal wiring layers, etc. during a semiconductor device manufacturing process, and has a novel intramolecular macrocyclic space composed of silane and aromatic compound according to the present invention. A low dielectric constant compound has a significantly lower dielectric constant than a conventional low dielectric material, and has excellent thermal stability due to the presence of rigid benzene groups in a molecular structure, thereby providing an excellent insulating film in a semiconductor manufacturing process.

Description

Low dielectric film formation method using vapor phase silicification process.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low dielectric constant compound, a method for manufacturing the same, and a method of forming a low dielectric thin film using the same for the purpose of insulation between metal wirings, insulation between metal wiring layers, and the like during a semiconductor device manufacturing process.

In the latter process of semiconductor device manufacturing, the insulating film growth technique is used for the purpose of insulation between metal wirings, insulation between metal wiring layers, and the like. However, with the trend of continuous integration of semiconductor devices, the number and density of wirings in subsequent processes of logic and memory devices are increasing, and the spacing between metal wirings is gradually decreasing. Silicon dioxide (SiO ₂ ), which is currently used as an insulating material, has a dielectric constant (k) of about 4.0, and at an integration degree of 0.25 μm or less, parasitic capacitance rapidly increases as the distance between wirings decreases. For this reason, in terms of device response speed, signal interference, and power consumption, conventional insulating materials are no longer capable of improving device characteristics. In order to overcome this problem, design improvements such as reducing the length of the wiring layer and increasing the thickness of the insulating layer have been made. However, some approaches have been pointed out as obstacles to the improvement of device performance in a manner contrary to the trend of integration.

Accordingly, various attempts have been made to introduce a process having a low dielectric constant (K < 3.0) in a metal wiring material and a material having a lower specific resistance than aluminum, and an insulating material. In particular, in the case of a logic device having a complicated number of wiring layers and a structure, a serious deterioration of the characteristics of a conventional device is required, and the necessity of introducing a low dielectric constant insulating material is increasing.

The insulating material used in the semiconductor process must satisfy characteristics such as excellent electrical insulation, sufficient mechanical strength, low residual stress, high adhesion, high thermal conductivity, and smooth flatness. However, since the conventional low dielectric constant material is a soft material in nature, it is generally inferior to an oxide film having high thermal, structural and chemical properties. Therefore, various kinds of materials have been developed for the selection of low dielectric constant materials suitable for metal wiring processes. In particular, as inorganic materials, silsesquioxane, amorphous carbon fluoride (CF _x ), phosphorus silicates, and the like are developed as parylenes and polyarylene ethers. (polyarylene ether), polyimides, cyclobutene derivatives, etc. have been developed and some materials have been applied to the actual process.

In general, the inorganic materials listed above are known to be fairly stable even at high temperatures of 500 ° C. or higher and have excellent mechanical strength. However, the inorganic materials are very sensitive to moisture in the process and difficult to coat on the metallization layer below 1 μm. On the other hand, it is known that the above organic materials can be coated with a thickness of 1 μm or less and are suitable for insulation of metal wiring layers with a dielectric constant of about 2.3 to 3.0.

In addition, attempts have been made to chemically introduce inorganic materials into organic materials for the purpose of improving thermal stability, which is a disadvantage of organic materials. However, such research has yet to be studied because it is difficult to obtain a stable chemical structure through chemical reaction between organic and inorganic materials.

It is known that a material having a low dielectric constant of about 2.9 is required when the transistor gate length is 0.25 μm. As a material having such a low dielectric constant and thermal, mechanical and chemical properties suitable for the process, a polyarylene ether system is known to be suitable. . Many polyarylene ether compounds have attempted to improve dielectric constant and heat resistance by changing substituents to benzene rings in various forms or by adding fluorine (F) groups. It is used by the spin coating method on the wiring layer.

Meanwhile, among the inorganic compounds, hydrogen silsesquioxane (R = H), methylsilsesquioxane (R = CH ₃ ), and phenylsilsesquioxane (R = C ₆ ), which are silses quoxane derivatives of the following Chemical Formula 1 H ₅ ) is generally widely used as an insulator in semiconductor processes, and these are excellent insulators in coating, excellent in thermal stability, and have an excellent dielectric constant (k) of about 2.7 to 3.5.

In the above formula,

R represents hydrogen, methyl or phenyl.

However, the compounds of formula 1 exhibit limitations in improving the dielectric constant due to the exchange of R substituents. Therefore, in view of the air's dielectric constant 1, attempts have been made to drastically lower the dielectric constant by introducing air into the compound in various ways, and in some cases (Nanoglass) products have been successful. However, these compounds still exhibit problems in process instability and reproducibility to be used directly in semiconductor processes.

Accordingly, the present invention has been made in an effort to provide a novel low dielectric constant material and a method for manufacturing the same, which improve the above-mentioned problems in order to use for the purpose of insulation between layers in a semiconductor manufacturing process.

The present invention also provides a method of forming a low dielectric thin film using a novel low dielectric constant material and a semiconductor device including the low dielectric thin film.

In order to achieve the above technical problem, the present invention bonds the structures of silsesquioxane and polyarylene ether-based compounds to take advantage of these two compounds and secure a large annular space for increasing the inflow of air in the molecule, thereby increasing the dielectric constant. To provide a compound of the formula (2) used as a precursor of a low dielectric constant microporous polymer to significantly improve.

In the above formula,

R ₁ represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group,

X includes an aromatic ring such as phenyl, biphenyl, naphthalene,

, , or

Z at this time represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group.

The method for preparing the compound of Chemical Formula 2 according to the present invention is as shown in Scheme 1 below by dissolving the Grignard Reagent of the formula (I) and the compound of the formula (II) in an anhydrous solvent under a nitrogen stream It can be prepared by reacting at room temperature for 1 to 10 hours.

In the above formula,

R ₁ represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group,

X includes an aromatic ring such as phenyl, biphenyl, naphthalene,

, , or

Z at this time represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group.

In the method for preparing the compound of formula 2 according to the present invention, each reactant may be obtained commercially or used synthetically, the amount of which is used per mole of the compound of formula (II) using 1 mol of the compound of formula (I) It is desirable to.

The present invention also provides a microporous polymer of low dielectric constant produced by polymerizing the compound of Chemical Formula 2.

The low dielectric microporous polymer produced by Chemical Formula 2 according to the present invention increases the inflow of air by increasing the annular portion (an octagonal ring composed of Si-O-Si in a low dielectric compound such as Hydrogen silsesquioxane or methyl silsesquioxane). To significantly improve the dielectric constant (k = 2.0 to 2.7), and have Si-O-Si bonds and Si-C bonds such as existing hydrogen silsesquioxane, methylsilsesquioxane or phenylsilsesquioxane. By introducing a rigid aromatic moiety as in polyarylene ether, it has properties of maintaining thermal stability, hydrophobicity and excellent adhesion.

The method for preparing a microporous polymer according to the present invention can be obtained by polymerizing the compound of Formula 2 in a mixed solvent of toluene / water.

Another method for preparing a microporous polymer according to the present invention can be obtained by dissolving the compound of Formula 2 in a conventional polymerization solvent and reacting under an ammonium fluoride (NH ₄ F) catalyst.

In the method for producing a low dielectric constant microporous polymer according to the present invention, the solvent used may be a solvent used for a conventional polymerization reaction, for example, nonpolar aromatic compounds such as toluene, benzene, xylene, acetone, Polar solvents such as tetrahydrofuran, methanol and ethanol can be used.

In the method of forming a coating film using the low dielectric constant microporous polymer according to the present invention, a solution in which the microporous polymer is dissolved using a solvent used in the coating film forming process in a semiconductor process using 100 to 2000% by weight of the polymer amount is typically used. After spin coating on the wafer, the solvent is removed at 100-250 ° C. and baked for crosslinking.

In this case, it is preferable to use the solvent in an amount of 100 to 700% by weight per microporous polymer according to the present invention.

The solvent used in the method for forming the coating film using the low dielectric constant microporous polymer according to the present invention is preferably cyclohexanone, cyclopentanone, n-methylpyrrolidine, dimethylacetamide, dimethylformamide, tetrahydro Furan, methyl (3-methoxy) propionate, ethyl (3-ethoxy) propionate, bis (2-ethoxyethyl) ether, methylethylketone, methylisobutylketone, γ-butyrolactone can be used Can be.

In the method of forming a coating film using a low dielectric constant microporous polymer according to the present invention, the coating film thickness is preferably 1,000 to 10,000 kPa, and the baking time is preferably 1 minute to 10 minutes.

The coating formation method using the low dielectric constant microporous polymer according to the present invention can be cured by removing the solvent and performing a first bake for crosslinking, followed by a second bake at about 350 ° C.

The low dielectric constant microporous polymer according to the present invention can be used not only in various semiconductor memory and non-memory products but also in various package materials, and its application is very wide.

Accordingly, the low dielectric constant microporous polymer according to the present invention is not only intended for insulation between metal wirings and insulation between metal wiring layers in the semiconductor device manufacturing process, but also for passivation layers for stabilizing devices at the package stage of semiconductor devices ( passiviation), that is, to form a protective film.

As a method of forming such a protective film layer, a method commonly used for forming a protective film in a manufacturing process of a semiconductor device can be used.

The coating film using the low dielectric constant microporous polymer according to the present invention has a dielectric constant (k) of 2.0 to 2.3 and has excellent thermal stability while having a thermal decomposition temperature of 400 ° C. or more.

Hereinafter, the present invention will be described in more detail. This embodiment is not intended to limit the scope of the invention, but is presented by way of example only.

Example 1

Under nitrogen stream, 0.1 mole of 1,4-dibromobenzene and Mg are added to 50 ml of anhydrous tetrahydrofuran (THF) and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of methyltrichlorosilane is added to this solution. After reacting for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess methyltrichlorosilane to obtain the compound of formula 2 according to the invention (R ₁ = CH ₃ , X = phenyl). The material is placed in a mixed solution of 100 ml of toluene and 50 ml of water and refluxed for 24 hours while removing water with Dean-Stark Trap. After the reaction, the reaction mixture was cooled, dropped into methanol / water mixed solution, precipitated, and the precipitate was vacuum dried to obtain a microporous polymer according to the present invention. Yield 83%.

Example 2)

Under nitrogen stream, 0.1 mole of 1,4-dibromobenzene and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of ethyltrichlorosilane is added to this solution. After reacting for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess ethyltrichlorosilane to obtain the compound of formula 2 according to the present invention (R ₁ = C ₂ H ₅ , X = phenyl) . The material is placed in a mixed solution of 100 ml of toluene and 50 ml of water and refluxed for 24 hours while removing water with Dean-Stark Trap. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 3

Under nitrogen stream, 0.1 mole of 1,4-dibromobenzene and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of trichlorosilane is added to this solution. After reacting for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess trichlorosilane to give the compound of formula 2 according to the invention (R ₁ = H, X = phenyl). The material is placed in a mixture of 100 ml of toluene and 50 ml of water and refluxed for 24 hours with a Dean-Stark trap to remove water. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 4

Under nitrogen stream, 0.1 mole of 1,4-dibromobenzene and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of phenyltrichlorosilane is added to this solution. After reacting for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess phenyltrichlorosilane to give the compound of formula 2 according to the invention (R ₁ = phenyl, X = phenyl). The material is placed in a mixture of 100 ml of toluene and 50 ml of water and refluxed for 24 hours with a Dean-Stark trap to remove water. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 5

Under a stream of nitrogen, 0.1 mole of 4,4'-dibromobiphenyl and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of methyltrichlorosilane is added to this solution. After reacting for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess methyltrichlorosilane to give the compound of formula 2 according to the invention (R ₁ = CH ₃ , X = biphenyl). The material is placed in a mixture of 100 ml of toluene and 50 ml of water and refluxed for 24 hours with a Dean-Stark trap to remove water. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 6

Under a stream of nitrogen, 0.1 mole of 4,4'-dibromobiphenyl and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of ethyltrichlorosilane is added to this solution. After reacting for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess ethyltrichlorosilane to obtain the compound of formula 2 according to the present invention (R ₁ = C ₂ H ₅ , X = biphenyl ). The material is placed in a mixture of 100 ml of toluene and 50 ml of water and refluxed for 24 hours with a Dean-Stark trap to remove water. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 7

Under a stream of nitrogen, 0.1 mole of 4,4'-dibromobiphenyl and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of trichlorosilane is added to this solution. After reacting for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess trichlorosilane to obtain the compound of formula 2 according to the invention (R ₁ = H, X = biphenyl). The material is placed in a mixture of 100 ml of toluene and 50 ml of water and refluxed for 24 hours with a Dean-Stark trap to remove water. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 8

Under a stream of nitrogen, 0.1 mole of 4,4'-dibromobiphenyl and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of phenyltrichlorosilane is added to this solution. After reacting for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess phenyltrichlorosilane to obtain the compound of formula 2 according to the invention (R ₁ = phenyl, X = biphenyl). The material is placed in a mixture of 100 ml of toluene and 50 ml of water and refluxed for 24 hours with a Dean-Stark trap to remove water. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 9

Under a stream of nitrogen, 0.1 mol of 4,4'-dibromoisopropylidenediphenyl and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of methyltrichlorosilane is added to this solution. After reacting for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess methyltrichlorosilane to obtain the compound of formula 2 according to the present invention (R ₁ = CH ₃ , X = isopropylidenedie Phenyl). The material is placed in a mixture of 100 ml of toluene and 50 ml of water and refluxed for 24 hours with a Dean-Stark trap to remove water. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 10)

Under a stream of nitrogen, 0.1 mol of 4,4'-dibromoisopropylidenediphenyl and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of ethyltrichlorosilane is added to this solution. After the reaction for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess ethyltrichlorosilane to obtain the compound of formula 2 according to the present invention (R ₁ = C ₂ H ₅ , X = isopropyl Lidene diphenyl). The material is placed in a mixture of 100 ml of toluene and 50 ml of water and refluxed for 24 hours with a Dean-Stark trap to remove water. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 11

Under a stream of nitrogen, 0.1 mol of 4,4'-dibromoisopropylidenediphenyl and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of trichlorosilane is added to this solution. After the reaction for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess trichlorosilane to obtain the compound of formula 2 according to the present invention (R ₁ = H, X = isopropylidenediphenyl) . The material is placed in a mixture of 100 ml of toluene and 50 ml of water and refluxed for 24 hours with a Dean-Stark trap to remove water. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 12)

Under a stream of nitrogen, 0.1 mol of 4,4'-dibromoisopropylidenediphenyl and Mg are added to 50 ml of anhydrous ether and stirred slowly. After stirring for 1 hour to form a Grignard compound, 1 mol of phenyltrichlorosilane is added to this solution. After reacting for 2 hours, the reaction mixture is filtered and the filtrate is vacuum distilled to remove the solvent and excess phenyltrichlorosilane to obtain the compound of formula 2 according to the present invention (R ₁ = phenyl, X = isopropylidenediphenyl ). The material is placed in a mixture of 100 ml of toluene and 50 ml of water and refluxed for 24 hours with a Dean-Stark trap to remove water. The following process was carried out in the same manner as in Example 1 to obtain a microporous polymer according to the present invention.

Example 13 Preparation of Anti-Reflection Film

Spin coating a solution in which 50 mg of each of the low dielectric constant microporous polymers prepared in Examples 1 to 12 completely dissolved in about 25 g of cyclohexanone to a thickness of 1000 to 10,000 μs on a wafer, and then 100 to 100 Remove the solvent at 250 ° C. and bake for 1-30 minutes for crosslinking. Thereafter, a photosensitive film is applied to perform a fine pattern forming step.

Example 14 Preparation of Antireflection Film

50 to 100 g of tetrahydrofuran in which 50 mg of each of the low dielectric constant microporous polymers prepared in Examples 1 to 12 were completely dissolved in about 500 g of tetrahydrofuran was spin-coated to a thickness of 1000 to 10,000 Å on a wafer, and then 100 to Remove the solvent at 250 ° C. and bake for 1-30 minutes for crosslinking. Further, after the second bake at about 350 ° C., a photosensitive film is applied to perform a fine pattern forming process.

Example 15)

The solution obtained by dissolving the microporous polymer according to the present invention obtained in Examples 1 to 12 in a 400 wt% cyclohexanone solvent per polymer was filtered through a 0.10 μm filter to obtain a coating solution having a low dielectric constant. After spin-coating this solution on a silicon wafer, it was first baked at 100 ° C. for 30 minutes and then baked at 350 ° C. for 30 minutes to measure the dielectric constant (k). As a result, the k value was obtained as low as 2.0 ~ 2.3.

As described above, the novel low dielectric constant compound having an intramolecular macrocyclic space composed of a silane and an aromatic compound according to the present invention was found to have a significantly lower dielectric constant than that of a conventional low dielectric material. Due to the presence of a rigid benzene group in the thermal stability is also very good there is an advantage that can provide an excellent insulating film in the semiconductor manufacturing process.

Claims (14)

A compound of formula (2) which can be used as a precursor of a low dielectric constant microporous polymer. (Formula 2) In the above formula, R ₁ represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group, X includes an aromatic ring such as phenyl, biphenyl, naphthalene, , , or Z at this time represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group. As shown in Scheme 1 below, the Grignard reagent of formula (I) and the compound of formula (II) are dissolved in an anhydrous solvent and reacted for 1 to 10 hours at room temperature under a nitrogen stream. How to manufacture. (Scheme 1) (Formula 2) In the above formula, R ₁ represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group, X includes an aromatic ring such as phenyl, biphenyl, naphthalene, , , or Z at this time represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group. The method of claim 2, wherein the amount of each reactant is used per mole of the compound of formula (II), 1 mole of the compound of formula (I). Microporous polymer, characterized in that formed by polymerizing the compound of formula (2). (Formula 2) In the above formula, R ₁ represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group, X includes an aromatic ring such as phenyl, biphenyl, naphthalene, , , or Z at this time represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group. A method of preparing a microporous polymer, characterized in that the compound of formula 2 is polymerized in a mixed solvent of toluene / water. (Formula 2) In the above formula, R ₁ represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group, X includes an aromatic ring such as phenyl, biphenyl, naphthalene, , , or Z at this time represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group. A method of preparing a microporous polymer, characterized in that the compound of formula 2 is reacted under an ammonium fluoride catalyst. (Formula 2) In the above formula, R ₁ represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group, X includes an aromatic ring such as phenyl, biphenyl, naphthalene, , , or Z at this time represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group. 7. Process according to claim 5 or 6, characterized in that as reaction solvents nonpolar aromatic compounds such as toluene, benzene and xylene or polar solvents such as acetone, tetrahydrofuran, methanol and ethanol are used. A low dielectric coating film comprising a low dielectric constant microporous polymer obtained by polymerizing a compound represented by the following formula (2). (Formula 2) In the above formula, R ₁ represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group, X includes an aromatic ring such as phenyl, biphenyl, naphthalene, , , or Z at this time represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group. Preparing a solution dissolved using 100 to 2000 wt% of a solvent based on the weight of the microporous polymer polymerized by Chemical Formula 2; Spin coating the solution onto a wafer on which a predetermined process is completed; And Low dielectric film forming method comprising the step of removing the solvent at 100 ~ 250 ℃ and baking for crosslinking. (Formula 2) In the above formula, R ₁ represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group, X includes an aromatic ring such as phenyl, biphenyl, naphthalene, , , or Z at this time represents hydrogen, substituted or unsubstituted alkyl having 1 to 4 carbon atoms, substituted or unsubstituted phenyl group, diphenyl group or p-terphenyl group, naphthalene group or halogen group. 10. The process of claim 9, wherein the solvent is cyclohexanone, cyclopentanone, n-methylpyrrolidine, dimethylacetamide, dimethylformamide, tetrahydrofuran, methyl (3-methoxy) propionate, ethyl (3 -Ethoxy) propionate, bis (2-ethoxyethyl) ether, methyl ethyl ketone, methyl isobutyl ketone, gamma -butyrolactone, characterized in that it is selected from the group. 10. The method of claim 9, wherein the coating thickness is 1,000 to 10,000 kPa. 10. The method of claim 9, further comprising performing a bake followed by a second bake at about 350 [deg.] C. to cure. A semiconductor device comprising a low dielectric coating film containing a microporous polymer formed by polymerizing a compound of formula 2 as an insulating film. A passivation film comprising a microporous polymer formed by polymerizing a compound of formula (2).