KR100481649B1 - LCD and its manufacturing method - Google Patents

Abstract

According to the present invention, a liquid crystal display device (LCD) and a method of manufacturing the same are provided such that an upper substrate provided with a black matrix and a color filter layer and a lower substrate provided with a pixel electrode and an opposite electrode are assembled with a liquid crystal interposed therebetween. In the method, a transparent conductive film, an arbitrary film, and a polarizing plate are sequentially formed on the back surface of the upper substrate and the lower substrate, respectively, so that a defect occurs due to a high temperature process required for manufacturing a color filter panel or a thin film transistor panel (eg, transparent conductive material). Electrostatic defects (eg, opening of metal lines) that occur before the upper / lower substrate assembly process, without film staining, contamination of the thin film manufacturing equipment, scratches of the transparent conductive film, or damage to the conductive film by the etching liquid used during the thin film patterning process. , Shorts between metal lines, changes in TFT characteristics, etc.) and electrostatic defects generated after the upper and lower substrate assembly processes (eg, Distortion of display characteristics) can be reduced simultaneously.

Description

LCD and its manufacturing method

The present invention relates to a liquid crystal display device (hereinafter referred to as LCD) and a manufacturing method thereof, and more particularly, to an LCD of an in-plane switching (IPS) mode and a method of manufacturing the same, which can prevent static failure. .

Electronic display devices are increasing in importance as a means of transmitting visual information and at the same time expanding the scale of industry in the realization of an information society. The diversification of information represented by the word multimedia makes the necessity of an electronic display device even more clear. At the same time, the demand for an electronic display device is also large screen, high-definition, excellent visibility and economical strength, especially low voltage / low power consumption is required as a requirement in portable information equipment.

As one of such electronic display devices, LCD, which has expanded its application market with thin / light weight and low power consumption, is not only rapidly expanding its demand by color display but also recently adopting equipment for mass production technology of large color liquid crystal. It is getting serious.

Among the LCDs having the above characteristics, in the IPS mode LCD designed to apply an electric field parallel to the substrate, a thin film transistor (hereinafter referred to as TFT) and a pixel electrode are formed so as to be connected to a plurality of data lines and gate lines, respectively. And a lower substrate (TFT substrate) having a counter electrode to which a separate voltage is applied, and a black matrix and a color filter (hereinafter referred to as C / F) are formed at a point spaced apart from the pixel electrode. The substrates (C / F substrates) are arranged to face each other, and have a structure in which a liquid crystal is injected into a space of several micrometers therebetween.

Electrostatic defects that may occur in the IPS mode LCD having the above structure can be largely classified into two types.

One of them is when the insulation of the metal line, the crossover portion of the metal line, or the TFT portion of the TFT is destroyed by static electricity, so that defects such as opening of the metal line, short between the metal lines, and changes in TFT characteristics are caused. to be. Such a defect is a defect that can easily occur not only in the IPS mode but also in the normal twisted nematic (TN) mode.

The other is a defect that may occur during actual operation after the TFT substrate as the lower substrate and the C / F substrate as the upper substrate are assembled, and when the static electricity flows from the outside, the liquid crystal molecules are affected by an unwanted potential. This is a case where a defect that returns to normal display characteristics is caused again after a predetermined time after this long distortion. This failure is a defect that can easily occur in an IPS mode LCD in which the counter electrode is not formed on the C / F panel.

As a conventional technique for preventing the electrostatic defects presented in the former, by designing an electrostatic protection circuit on a TFT substrate and using it to distribute the static electricity throughout the TFT substrate, or by using a contact connection technology for each of the metal layers laminated By electrically connecting them, a method of preventing the occurrence of static electricity has been proposed to form an equipotential.

In addition, as a conventional technique for preventing the electrostatic defects presented in the latter, a method has been proposed to spread the static electricity evenly throughout the panel when the static electricity flows by using a conductive polarizing plate.

However, the above-mentioned techniques cannot prevent the latter electrostatic defect only by the method presented in the former, and likewise, the latter method does not prevent the electrostatic defect mainly generated before the upper / lower substrate assembly process.

Accordingly, an object of the present invention is to form a conductive film having excellent transmittance characteristics on the back side of the upper substrate and the lower substrate during LCD manufacturing, and to form an optional film having heat resistance, abrasion resistance, and chemical resistance thereon, By providing a substrate assembly process, an LCD and a method of manufacturing the same are provided to reduce the occurrence of electrostatic defects in high-definition and large-area LCD.

In the first embodiment of the present invention, an upper substrate provided with a black matrix and a C / F layer, and a lower substrate provided with a pixel electrode and an opposite electrode are assembled in an LCD in which liquid crystal is interposed therebetween. An LCD having a structure in which a transparent conductive film, an optional film, and a polarizing plate are sequentially formed on the back surface of the upper substrate and the lower substrate is provided.

The LCD having the above structure includes a process of forming a transparent conductive film on the back surface of the upper substrate, a process of forming an arbitrary film on the transparent conductive film on the upper substrate, and a black matrix and C / F on the front surface of the upper substrate. Forming a layer sequentially, forming a transparent conductive film on the back surface of the lower substrate, forming a random film on the transparent conductive film on the lower substrate, and facing the pixel electrode on the front surface of the lower substrate. Forming an electrode, assembling the upper and lower substrates such that the front surface of the upper substrate and the front surface of the lower substrate face each other, and injecting liquid crystal between the upper and lower substrates; It is manufactured through the process of adhering a polarizing plate on each said arbitrary film | membrane.

In the second embodiment of the present invention, an upper substrate provided with a black matrix and a C / F layer, and a lower substrate provided with a pixel electrode and an opposite electrode are assembled in an LCD in which liquid crystal is interposed therebetween. The LCD has a structure in which a transparent conductive film, an optional film, and a polarizing plate are sequentially formed on the back surface of the upper substrate, and a polarizing plate is formed on the back surface of the lower substrate.

The LCD having the above structure includes a process of forming a transparent conductive film on a white surface of an upper substrate, a process of forming an arbitrary film on a transparent conductive film on the upper substrate, and a black matrix and a color filter layer on a front surface of the upper substrate. Forming the pixel electrode and the counter electrode on the front surface of the lower substrate; and assembling the upper and lower substrates so that the front surface of the upper substrate and the front surface of the lower substrate face each other. And a process of injecting a liquid crystal between the upper and lower substrates, and attaching a polarizing plate to the back surface of the arbitrary film and the lower substrate, respectively.

In the third embodiment of the present invention, an upper substrate provided with a black matrix and a C / F layer, and a lower substrate provided with a pixel electrode and an opposing electrode are assembled in an LCD configured to sandwich the liquid crystal therebetween. The LCD has a structure in which a transparent conductive film, an optional film, and a polarizing plate are sequentially formed on the back surface of the lower substrate, and a polarizing plate is formed on the back surface of the upper substrate.

The LCD having the above structure comprises the steps of sequentially forming a black matrix and a color filter layer on the front surface of the upper substrate, forming a transparent conductive film on the back surface of the lower substrate, and optionally forming a transparent conductive film on the lower substrate. Forming a film, forming a pixel electrode and an opposite electrode on a front surface of the lower substrate, and assembling the upper and lower substrates such that the front surface of the upper substrate and the front surface of the lower substrate face each other. And a process of injecting a liquid crystal between the upper and lower substrates, and attaching a polarizing plate to the back surface of the arbitrary film and the upper substrate, respectively.

As a result of manufacturing the LCD to have the above structure, in the first embodiment, defects (eg, opening of metal lines, short between metal lines, changes in TFT characteristics, etc.) caused by static electricity before the upper and lower substrate assembly processes are performed. After the upper / lower substrate assembly process, defects caused by external static electricity inflow (for example, distortion of display characteristics) can be removed at the same time. In the second embodiment, external static electricity after the upper / lower substrate assembly process is eliminated. The defects caused by the inflow can be removed, and in the third embodiment, the defects caused by the static electricity can be removed before the upper / lower substrate assembly process.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

FIG. 1 is a cross-sectional view showing the structure of an IPS mode LCD according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view showing the structure of an IPS mode LCD according to a second embodiment of the present invention. 3 is a cross-sectional view showing the structure of an IPS mode LCD according to a third embodiment of the present invention. Referring to the cross-sectional view of the LCD structure and the manufacturing method according to each embodiment in detail as follows.

First, the case of the first embodiment shown in FIG. 1 will be described.

Referring to FIG. 1, it can be seen that the LCD presented in the first embodiment of the present invention has a structure as follows. That is, the upper substrate 200 having the black matrix (not shown) and the color filter layer (not shown), and the lower substrate 100 having the pixel electrode 110 and the counter electrode 108 form the liquid crystal 300. It is assembled to be sandwiched between the transparent substrates 202, 102, arbitrary film 204, 104 on the back surface (surface to which the polarizing plate is attached) of the upper substrate 200 and the lower substrate 100, respectively. And polarizing plates 206 and 106 are sequentially stacked.

In this case, the transparent conductive films 202 and 102 may be formed to have a structure deposited on the back surface of the upper and lower substrates 200 and 100 in a thin film form, whereas the upper and lower substrates may be formed. It may be formed to have a conductive film pattern on the back surface of (200), (100), the former case is common.

When the transparent conductive film pattern is to be formed on the back surface of the substrate as in the latter case, the transparent conductive film pattern should be formed based on the following conditions. That is, when the transparent conductive film 202 is patterned on the back surface of the upper substrate 200, the transparent conductive film pattern is selectively formed only on the upper substrate 200 at a position corresponding to the color filter layer. On the other hand, in the case of patterning the transparent conductive film 102 on the back surface of the lower electrode 100, selectively only on the lower substrate 100 at a position corresponding to the pixel electrode 110 and the counter electrode 108 It should be manufactured to have a structure in which a transparent conductive film pattern is formed.

The transparent conductive films 202 and 102 are mainly formed of ITO having excellent light transmissive properties, wherein the transparent conductive film 102 on the lower substrate 100 is open of metal lines or metals that may be generated during the process. It is formed to prevent electrostatic defects such as short circuits between lines and changes in characteristics of TFTs. The transparent conductive film 202 on the upper substrate 200 is formed after the upper and lower substrates 200 and 100 are assembled. It is formed to prevent the electrostatic defect that the display characteristics are distorted for a long time by the static electricity introduced from the outside when driving the LCD.

In the present invention, the position at which the transparent conductive films 202 and 102 are formed is not a front side of the substrate 200 or 100 on which the liquid crystal 300 or the alignment film (not shown) is formed. 206 and 106 are formed on the back surfaces of the substrates 200 and 100 to form transparent conductive films 202 and 102 on the front surfaces of the substrates 200 and 100. In this case, since the electric field between the upper and lower substrates 200 and 100 is distorted by the conductive film, the light transmission characteristics of the LCD are remarkably degraded, so that the transparent conductive films 202 and 102 are actually driven by liquid crystals. This is to prevent the influence of the direction 304 of the electric field required at the time. In FIG. 1, reference numeral 302 denotes an equipotential distribution in the case where the transparent conductive films 202, 102, the optional films 204, and 104 are formed on the back surface of the upper / lower substrates 200, 100. Indicates.

The arbitrary films 204 and 104 may be formed of a material having heat resistance, abrasion resistance, and chemical resistance, and typical examples thereof include silicon or a silicon mixture (eg, an oxide film or a nitride film).

Thus, the arbitrary films 204 and 104 having heat resistance, abrasion resistance, and chemical resistance on the transparent conductive films 202 and 102 are formed of the arbitrary films 204 and 104. When not formed on the conductive film, stains of the transparent conductive film by high-temperature processes in manufacturing TFT panels or C / F panels, contamination of the thin film manufacturing equipment, scratches of the transparent conductive film, and etching liquids used during the thin film patterning process This is to prevent such a phenomenon, such as damage to the conductive film due to (etchant).

Therefore, the LCD having the above structure is manufactured through the following fourth step process.

As a first step, a transparent conductive film 202 having a thickness of 5000 kPa or less is formed on a back surface of the upper substrate 200 (for example, a surface on which a polarizer is attached), and silicon or silicon having heat resistance, abrasion resistance, and chemical resistance thereon After forming an arbitrary film 204 of a silicon mixture material (for example, an oxide film or a nitride film) to a predetermined thickness, a black matrix and a color filter layer are sequentially formed on the front surface of the upper substrate 200 (for example, the surface in contact with the liquid crystal). Form.

As a second step, a transparent conductive film 102 having a thickness of 5000 kPa or less is formed on a back surface of the lower substrate 100 (for example, a surface to which a polarizing plate is attached), and silicon or silicon having heat resistance, abrasion resistance, and chemical resistance thereon is formed thereon. After forming an arbitrary film 104 of a silicon mixture material (for example, an oxide film or a nitride film) to a predetermined thickness, the pixel electrode 110 and the counter electrode are formed on the front surface of the lower substrate 100 (for example, the surface in contact with the liquid crystal). Form 108.

In a third step, the upper and lower substrates 200 and 100 are assembled such that the front surface of the upper substrate 200 and the front surface of the lower substrate 100 face each other, and there are several μm therebetween. Inject liquid crystal into the space.

As a fourth step, the process is completed by attaching the polarizing plates 206 and 106 to the arbitrary films 204 and 104, respectively.

As a result of the above process, defects (eg, opening of metal lines, short between metal lines, changes in TFT characteristics, etc.) caused by static electricity before the upper / lower substrates 200 and 100 assembly processes, and upper / lower substrate assembly processes After that, it is possible to simultaneously remove defects (for example, distortion of display characteristics) caused by external static electricity.

Next, as a modification of the first embodiment, look at the second embodiment shown in FIG. The LCD presented in the above embodiment is the same as the first embodiment except that the transparent conductive film 202 and the optional film 204 are formed only on the back surface of the upper substrate 200 as compared with the first embodiment. Explain.

2, it can be seen that the LCD presented in the second embodiment of the present invention has a structure as follows. That is, the upper substrate 200 having the black matrix (not shown) and the color filter layer (not shown), and the lower substrate 100 having the pixel electrode 110 and the counter electrode 108 form the liquid crystal 300. It is assembled in between, and the back surface of the upper substrate 200 has a structure in which a transparent conductive film 202, an arbitrary film 204 and a polarizing plate 206 are sequentially stacked.

In this case, the transparent conductive film 202 may have a thin film structure deposited on the entire surface as mentioned above, while the transparent conductive film pattern is selectively formed only on the upper substrate 200 at a position corresponding to the color filter layer. May have

Therefore, the LCD having the above structure is manufactured through the following fourth step process.

As a first step, a transparent conductive film 202 having a thickness of 5000 mm or less is formed on the back surface of the upper substrate 200, and an arbitrary film 204 of silicon or a silicon mixture material (for example, an oxide film or a nitride film) is formed thereon. After forming a predetermined thickness, a black matrix and a color filter layer are sequentially formed on the front surface of the upper substrate 200.

As a second step, the pixel electrode 110 and the counter electrode 108 are formed on the front surface of the lower substrate 100.

In a third step, the upper and lower substrates 200 and 100 are assembled such that the front surface of the upper substrate 200 and the front surface of the lower substrate 100 face each other, and there are several μm therebetween. Inject liquid crystal into the space.

As a fourth step, the process is completed by attaching the polarizing plates 206 and 106 to the back surface of the arbitrary film 204 and the lower substrate 100, respectively.

As a result of the process, it is possible to simultaneously remove defects (eg, distortion of display characteristics) caused by the inflow of static electricity after the assembly process of the upper and lower substrates 200 and 100.

Next, as another modification of the first embodiment, a third embodiment shown in FIG. 3 will be described. The LCD presented in the above embodiment is the same as the first embodiment except that the transparent conductive film 102 and the optional film 104 are formed only on the back surface of the lower substrate 100 as compared with the first embodiment. Explain.

Referring to FIG. 3, it can be seen that the LCD presented in the third embodiment of the present invention has a structure as follows. That is, the upper substrate 200 having the black matrix (not shown) and the color filter layer (not shown), and the lower substrate 100 having the pixel electrode 110 and the counter electrode 108 form the liquid crystal 300. It is assembled in between, and the back surface of the lower substrate 100 has a structure in which a transparent conductive film 102, an arbitrary film 104 and a polarizing plate 106 are sequentially stacked.

In this case, the transparent conductive film 102 may have a thin film structure deposited on the entire surface as mentioned above, whereas the transparent conductive film 102 may be selectively formed only on the lower substrate 100 at a position corresponding to the pixel electrode 110 and the counter electrode 108. It may have a structure in which a transparent conductive film pattern is formed.

Therefore, the LCD having the above structure is manufactured through the following fourth step process.

As a first step, a black matrix and a color filter layer are sequentially formed on the front surface of the upper substrate 200.

As a second step, a transparent conductive film 102 having a thickness of 5000 mm or less is formed on the back surface of the lower substrate 100, and an arbitrary film 104 of silicon or a silicon mixture material (for example, an oxide film or a nitride film) is formed thereon. After forming a predetermined thickness, the pixel electrode 110 and the counter electrode 108 are formed on the front surface of the lower substrate 100 (for example, the surface in contact with the liquid crystal).

In a third step, the upper and lower substrates 200 and 100 are assembled such that the front surface of the upper substrate 200 and the front surface of the lower substrate 100 face each other, and there are several μm therebetween. Inject liquid crystal into the space.

As a fourth step, the polarizers 106 and 206 are attached to the arbitrary film 104 and the back surface of the upper substrate 200, respectively, thereby completing this process.

As a result of the above process, defects (eg, opening of metal lines, shorts between metal lines, changes in TFT characteristics, etc.) caused by static electricity before the upper / lower substrates 200 and 100 may be removed.

As described above, according to the present invention, when manufacturing an LCD in IPS mode, C is formed by sequentially forming a transparent conductive film and an arbitrary film (for example, silicon or a silicon mixture) on the back surface of the upper and lower substrates in contact with the polarizing plate. Defects caused by high temperature processes required for fabricating / F panels or TFT panels (e.g., staining of transparent conductive films, contamination of thin film manufacturing equipment, scratches of transparent conductive films, damage of conductive films by etching solutions used during thin film patterning processes, etc.) Without, electrostatic defects generated before the upper / lower substrate assembly process (eg, opening of metal lines, short between metal lines, TFT characteristic change, etc.) and electrostatic defects generated after the upper / lower substrate assembly process (eg, display characteristics Distortion can be reduced simultaneously.

1 is a cross-sectional view showing the structure of an IPS mode liquid crystal display device according to a first embodiment of the present invention;

2 is a cross-sectional view showing the structure of an IPS mode liquid crystal display device according to a second embodiment of the present invention;

3 is a cross-sectional view showing the structure of an IPS mode liquid crystal display device according to a third embodiment of the present invention;

Claims (38)

An upper substrate provided with a black matrix and a color filter layer on an upper surface thereof, a pixel electrode and an opposite electrode provided on an upper surface thereof, and a lower substrate coupled to the upper substrate so that the color filter layer and the pixel electrode face each other, and the upper substrate and the In the liquid crystal display device consisting of a liquid crystal layer provided between the lower substrate, A first transparent conductive film, a first passivation film, and a first polarizing plate are sequentially provided on a rear surface of the upper substrate, which faces the upper surface, and a second transparent conductive film, a second protective film, Liquid crystal display device characterized in that the polarizing plate is provided in sequence. The liquid crystal display of claim 1, wherein the first and second transparent conductive films are ITO. The liquid crystal display of claim 1, wherein the first and second passivation layers are made of silicon or a mixture of silicon. The liquid crystal display device according to claim 3, wherein the silicon mixture is formed of an oxide film or a nitride film. The liquid crystal display device of claim 1, wherein the first and second transparent conductive films have a thickness of less than 5000 GPa. The liquid crystal display device according to claim 1, wherein the first transparent conductive film is selectively formed at a position corresponding to the color filter layer. The liquid crystal display device of claim 1, wherein the second transparent conductive film is entirely terminated on the rear surface of the lower substrate or selectively formed at a position corresponding to the pixel electrode and the counter electrode. An upper substrate provided with a black matrix and a color filter layer on an upper surface thereof, a pixel electrode and an opposite electrode provided on an upper surface thereof, and a lower substrate coupled to the upper substrate so that the color filter layer and the pixel electrode face each other; and the upper substrate and the In the liquid crystal display device consisting of a liquid crystal layer provided between the lower substrate, A transparent conductive film, a protective film, and a first polarizing plate are sequentially provided on the rear surface of the upper substrate opposite to the upper surface, and a second polarizing plate is provided on the rear surface of the lower substrate opposite to the upper surface of the lower substrate. . The liquid crystal display device according to claim 8, wherein the transparent conductive film is ITO. The liquid crystal display device according to claim 8, wherein the protective film is made of silicon or a silicon mixture. The liquid crystal display device according to claim 10, wherein the silicon mixture is formed of an oxide film or a nitride film. 10. The liquid crystal display device according to claim 8, wherein the transparent conductive film has a thickness within 5000 mW. The liquid crystal display device of claim 8, wherein the transparent conductive film is entirely deposited on the rear surface of the upper substrate or is selectively formed at a position corresponding to the pixel electrode and the counter electrode. An upper substrate provided with a black matrix and a color filter layer on an upper surface thereof, a pixel electrode and an opposite electrode provided on an upper surface thereof, and a lower substrate coupled to the upper substrate so that the color filter layer and the pixel electrode face each other, and the upper substrate and the In the liquid crystal display device consisting of a liquid crystal layer provided between the lower substrate, A first polarizing plate is provided on the rear surface of the upper substrate opposite the upper surface, and a transparent conductive film, a protective film, and a second polarizing plate are sequentially provided on the rear surface of the lower substrate facing the upper surface of the upper substrate. . The liquid crystal display device according to claim 14, wherein the transparent conductive film is ITO. 15. The liquid crystal display device according to claim 14, wherein the protective film is made of silicon or a silicon mixture. 17. The liquid crystal display device according to claim 16, wherein the silicon mixture is formed of an oxide film or a nitride film. 15. The liquid crystal display device according to claim 14, wherein the transparent conductive film has a thickness within 5000 mW. The liquid crystal display device of claim 14, wherein the transparent conductive film is entirely deposited on the rear surface of the lower substrate or selectively formed at a position corresponding to the pixel electrode and the counter electrode. Forming a first transparent conductive film on the back surface of the upper substrate; Forming a first protective film on the first transparent conductive film; Sequentially forming a black matrix and a color filter layer on an upper surface of the upper substrate facing the rear surface; Forming a second transparent conductive film on the rear surface of the lower substrate; Forming a second protective film on the second transparent conductive film; Forming a pixel electrode and an opposite electrode on an upper surface of the lower substrate facing the rear surface of the lower substrate; Assembling the upper and lower substrates such that the upper surface of the upper substrate and the upper surface of the lower substrate face each other; Injecting liquid crystal between the upper and lower substrates; And attaching a first polarizing plate on the first passivation layer and attaching a second polarizing plate on the second passivation layer. 21. The method of claim 20, wherein the first and second transparent conductive films are formed of ITO. 21. The method of claim 20, wherein the first and second passivation layers are formed of silicon or a silicon mixture. 23. The method of claim 22, wherein an oxide film or a nitride film is used as the silicon mixture. 21. The method of claim 20, wherein the first and second transparent conductive films are formed to a thickness of 5000 kPa or less. 21. The method of claim 20, wherein the photoresist film is formed on the first transparent conductive film after the process of forming the first transparent conductive film on the back surface of the upper substrate, and the back surface of the upper substrate is predetermined by a photolithography process. And forming a photoresist pattern by selectively etching the photoresist so as to partially expose the photoresist, etching the first transparent conductive film using the photoresist pattern as a mask, and removing the photoresist pattern. Liquid crystal display device manufacturing method characterized in that. 21. The method of claim 20, wherein after the process of forming the second transparent conductive film on the bottom surface of the lower substrate, a process of forming a photosensitive film on the second transparent conductive film and the photolithography process, the back surface of the lower substrate is predetermined And forming a photoresist pattern by selectively etching the photoresist so as to partially expose the photoresist, etching the second transparent conductive film using the photoresist pattern as a mask, and removing the photoresist pattern. Liquid crystal display device manufacturing method characterized in that. Forming a transparent conductive film on the back surface of the upper substrate; Forming a protective film on the transparent conductive film formed on the upper substrate; Sequentially forming a black matrix and a color filter layer on an upper surface of the upper substrate facing the rear surface; Forming a pixel electrode and an opposite electrode on an upper surface of the lower substrate; Assembling the upper and lower substrates such that the upper surface of the upper substrate and the upper surface of the lower substrate face each other; Injecting liquid crystal between the upper and lower substrates; And attaching a first polarizing plate to an upper surface of the passivation layer and attaching a second polarizing plate to a rear surface of the lower substrate facing the upper surface of the lower substrate. 28. The method of claim 27, wherein the transparent conductive film is formed of ITO. 28. The method of claim 27, wherein the protective film is formed of silicon or a silicon mixture. 30. The method of claim 29, wherein an oxide film or a nitride film is used as the silicon mixture. 28. The method of claim 27, wherein the transparent conductive film is formed to a thickness of 5000 kPa or less. 28. The method of claim 27, wherein the photosensitive film is formed on the transparent conductive film after the process of forming the transparent conductive film on the rear surface of the upper substrate, and the back surface of the upper substrate is exposed by a photolithography process. And forming a photoresist pattern by selectively etching the photoresist film, etching the transparent conductive film by using the photoresist pattern as a mask, and removing the photoresist pattern. Manufacturing method. Sequentially forming a black matrix and a color filter layer on the upper surface of the upper substrate, Forming a transparent conductive film on the back surface of the lower substrate; Forming a protective film on the transparent conductive film formed on the lower substrate; Forming a pixel electrode and an opposite electrode on an upper surface of the lower substrate facing the rear surface of the lower substrate; Assembling the upper and lower substrates such that the upper surface of the upper substrate and the upper surface of the lower substrate face each other; Injecting liquid crystal between the upper and lower substrates; And attaching a first polarizing plate to a rear surface of the upper substrate facing the upper surface and attaching a second polarizing plate to the passivation layer. The method of claim 33, wherein the transparent conductive film is formed of ITO. The method of claim 33, wherein the protective film is formed of silicon or a mixture of silicon. 36. The method of claim 35, wherein an oxide film or a nitride film is used as the silicon mixture. 34. The method of claim 33, wherein the transparent conductive film is formed to a thickness of 5000 kPa or less. 34. The method of claim 33, wherein the photosensitive film is formed on the transparent conductive film after the process of forming the transparent conductive film on the rear surface of the lower substrate, and the back surface of the lower substrate is exposed by a photolithography process. And forming a photoresist pattern by selectively etching the photoresist film, etching the transparent conductive film by using the photoresist pattern as a mask, and removing the photoresist pattern. Manufacturing method.

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