KR100479858B1 - Liquid Epoxy Resin Composition for Encapsulating Semiconductor Device - Google Patents

Liquid Epoxy Resin Composition for Encapsulating Semiconductor Device Download PDF

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KR100479858B1
KR100479858B1 KR10-2001-0087499A KR20010087499A KR100479858B1 KR 100479858 B1 KR100479858 B1 KR 100479858B1 KR 20010087499 A KR20010087499 A KR 20010087499A KR 100479858 B1 KR100479858 B1 KR 100479858B1
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epoxy resin
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liquid epoxy
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김진모
장두원
심정섭
김종성
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제일모직주식회사
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22Di-epoxy compounds
    • C08G59/24Di-epoxy compounds carbocyclic
    • C08G59/245Di-epoxy compounds carbocyclic aromatic
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    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
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    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/686Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/02Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group

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Abstract

본 발명은 반도체 소자 밀봉용 액상 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 에폭시수지로서 나프탈렌계 및 다관능에폭시 수지를 혼합하여 사용하며, 경화제로서 알킬화 테트라프탈릭산무수물 및 메틸테트라프탈산무수물을 혼합하여 사용하고, 무기 충진제를 70∼80중량% 포함하여, 경화 후 굴곡강도, 내열특성 및 내습성이 우수한 반도체 소자 밀봉용 액상 에폭시 수지 조성물에 관한 것이다.The present invention relates to a liquid epoxy resin composition for sealing semiconductor devices, and more particularly, a mixture of naphthalene-based and polyfunctional epoxy resins as an epoxy resin, and an alkylated tetraphthalic anhydride and a methyl tetraphthalic anhydride as a curing agent. The present invention relates to a liquid epoxy resin composition for sealing a semiconductor device, including 70 to 80% by weight of an inorganic filler, and excellent in bending strength, heat resistance, and moisture resistance after curing.

Description

반도체 소자 밀봉용 액상 에폭시 수지 조성물 {Liquid Epoxy Resin Composition for Encapsulating Semiconductor Device}Liquid Epoxy Resin Composition for Encapsulating Semiconductor Device

본 발명은 반도체 소자 밀봉용 액상 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 용매를 사용하지 않고, 특정 에폭시 수지, 경화제 및 촉매를 사용하여, 특히 볼그리드 어레이 패키지에 있어서 중요한 작업특성인 평활성과 열충격 신뢰성을 개선시킨 액상 에폭시 수지 조성물에 관한 것이다.The present invention relates to a liquid epoxy resin composition for sealing semiconductor devices, and more particularly, using a specific epoxy resin, a curing agent, and a catalyst, without using a solvent, in particular, smoothness and thermal shock, which are important work characteristics in a ball grid array package. It relates to a liquid epoxy resin composition with improved reliability.

전자 및 전기기기의 소형화, 경량화 그리고 고기능화에 따라 반도체의 실장방법도 핀 삽입형에서 표면실장형이 주류를 이루고 있다. 또한 단위 면적당 처리용량이 커짐에 따라 열방출 효과가 우수한 신규 패키지에 대한 요구는 날로 증가되고 있는 실정이다.With the miniaturization, light weight, and high functionality of electronic and electrical equipment, semiconductor mounting methods are mainly mainstream from pin insertion to surface mounting. In addition, as the processing capacity per unit area increases, the demand for a new package having excellent heat dissipation effect is increasing day by day.

일반적으로 액상봉지재는 반도체칩, 전도성 와이어, 리드프레임 또는 인쇄회로기판 등을 외부의 환경으로부터 보호하기 위해 사용되는 재료로써 에폭시 몰딩 컴파운드와 함께 사용되고 있다. 에폭시 몰딩 컴파운드를 이용한 봉지공정은 일정한 금형에 트랜스퍼 몰딩방식으로 봉지함으로써 초기 투자비용이 많이 소요되고, 몰딩시 와이어의 손상과 금형오염에 따른 패키지의 오염이 발생하는 문제점이 있다. 이러한 단점을 해결하기 위하여 최근 액상 봉지재를 사용하여 주입법에 의해 봉지하는 방법이 볼그리드 어레이 패키지 및 핀그리드 어레이 패키지 등에 적용되고 있다.(대한민국 특허공개 1999-0043137호)In general, the liquid encapsulant is used with an epoxy molding compound as a material used to protect semiconductor chips, conductive wires, lead frames or printed circuit boards from the external environment. The encapsulation process using the epoxy molding compound requires a large initial investment by encapsulating the mold in a transfer molding method, and there is a problem in that the package is damaged due to wire damage and mold contamination during molding. In order to solve these disadvantages, a method of encapsulating by using a liquid encapsulation material has recently been applied to a ball grid array package and a pin grid array package. (Korean Patent Publication No. 1999-0043137)

특히 볼그리드 어레이 패키지는 열방출 특성이 우수한 패키지로 현재 수요가 증가되고 있는 실정이며, 이때 봉지재로 작업성이 우수한 액상 에폭시 수지 조성물을 사용하고 있다. 종래의 액상 에폭시 수지 조성물로서는, 액상 에폭시 수지에 페놀계 경화제와 반응촉매, 신뢰성 향상을 위하여 실리카 등의 무기물 충진제 그리고 점도조절을 위해 용매를 사용한 조성물이 주류를 이루고 있었다.In particular, the ball grid array package is a situation that the current demand is increasing as a package having excellent heat dissipation characteristics, at this time using a liquid epoxy resin composition excellent in workability as an encapsulant. Conventional liquid epoxy resin compositions are mainly composed of phenolic curing agents, reaction catalysts, inorganic fillers such as silica for improving reliability, and solvents for viscosity control in liquid epoxy resins.

그러나, 이와 같이 점도조절을 위하여 액상 봉지재에 용매를 첨가할 경우 경화후 봉지재의 강도가 떨어질 뿐만 아니라, 반도체 조립시 용매 휘발을 위한 공정이 필요하여 생산성 저하라는 문제점이 발생하여 이에 대한 개선이 요구되고 있다. 최근 저점도 에폭시 수지와 산무수물을 사용하여 무용제 액상 봉지재 개발(일본 특허공개 2000-273149호, 미국특허 제6,117,953호, 일본 특허공개 平11-269250호 등)이 활발히 이루어지고 있는 실정이나, 산무수물의 적용시 수분흡수율이 증가되고 저분자량의 에폭시 수지를 사용함으로 내열성이 저하되며 이로 인하여 열충격 신뢰도 불량이 발생하여 이에 대한 개선이 요구되고 있는 실정이다.However, when the solvent is added to the liquid encapsulant for viscosity control as described above, the strength of the encapsulant is lowered after curing, and a process for volatilization of the solvent is required during semiconductor assembly, resulting in a problem of lowering productivity, requiring improvement. It is becoming. Recently, the development of a solvent-free liquid encapsulant using low viscosity epoxy resin and acid anhydride (Japanese Patent Publication No. 2000-273149, US Patent No. 6,117,953, Japanese Patent Publication No. Hei 11-269250, etc.) has been actively conducted. When the anhydride is applied, the water absorption rate is increased and the heat resistance is lowered by using a low molecular weight epoxy resin, which causes a poor thermal shock reliability, which is required to improve the situation.

본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 용매를 사용하지 않아 공정성이 우수하며, 내습성과 열충격 신뢰성이 개선된 반도체 밀봉용 액상 봉지재를 제공하는 것을 목적으로 한다.The present invention is to solve the problems of the prior art as described above, it is an object of the present invention to provide a liquid sealing material for semiconductor sealing excellent in processability, improved moisture resistance and thermal shock reliability without using a solvent.

본 발명자들은 상기 목적을 달성하기 위하여 예의 검토를 거듭한 결과, 용매를 사용하지 않고, 에폭시수지로서 나프탈렌계 및 다관능 에폭시 수지를 혼합하여 사용하며, 경화제로서 알킬화 테트라프탈산 무수물 및 메틸테트라프탈산 무수물을 혼합하여 사용하는 경우, 무기물 충진제의 함량이 80중량% 정도인 경우에도 점도가 30,000cps 이하인 액상 에폭시 수지 조성물을 얻을 수 있음을 알게 되어 본 발명을 완성하였다.MEANS TO SOLVE THE PROBLEM As a result of earnestly examining in order to achieve the said objective, the present inventors mixed naphthalene type and a polyfunctional epoxy resin as an epoxy resin, without using a solvent, and used alkylated tetraphthalic anhydride and methyl tetraphthalic anhydride as a hardening | curing agent. When the mixture is used, it was found that even when the content of the inorganic filler is about 80% by weight, a liquid epoxy resin composition having a viscosity of 30,000 cps or less can be obtained to complete the present invention.

즉, 본 발명은 에폭시 수지로서 하기 화학식 1로 표시되는 나프탈렌계 에폭시 수지 및 하기 화학식 2로 표시되는 다관능 에폭시 수지; 경화제로서 하기 화학식 3으로 표시되는 알킬화 테트라하이드로프탈산 무수물 및 하기 화학식 4로 표시되는 메틸테트라하이드로프탈산 무수물; 경화촉매; 및 무기 충진제를 필수성분으로 하고, 용매를 포함하지 않는 반도체 봉지용 액상 에폭시 수지 조성물에 관한 것이다.That is, the present invention is an epoxy resin, naphthalene-based epoxy resin represented by the following formula (1) and polyfunctional epoxy resin represented by the following formula (2); Alkylated tetrahydrophthalic anhydride represented by following formula (3) and methyltetrahydrophthalic anhydride represented by following formula (4) as a hardening | curing agent; Curing catalyst; And it is related with the liquid epoxy resin composition for semiconductor sealing which has an inorganic filler as an essential component, and does not contain a solvent.

[화학식 1][Formula 1]

[화학식 2][Formula 2]

[화학식 3][Formula 3]

상기 식에서 R1, R2 및 R3는 탄소수 4∼8의 알킬 혹은 알케닐기이다.In the above formula, R 1 , R 2 and R 3 are alkyl or alkenyl groups having 4 to 8 carbon atoms.

[화학식 4][Formula 4]

이하에서 본 발명을 보다 상세하게 설명한다.Hereinafter, the present invention will be described in more detail.

본 발명에서는 에폭시 수지로 하기 화학식 1로 표시되는 나프탈렌계 에폭시 수지 및 하기 화학식 2로 표시되는 다관능 에폭시 수지를 혼합하여 사용한다.In the present invention, a naphthalene epoxy resin represented by the following Chemical Formula 1 and a polyfunctional epoxy resin represented by the following Chemical Formula 2 are used as an epoxy resin.

상기 나프탈렌계 에폭시 수지와 다관능 에폭시 수지는 에폭시 당량이 각각 130∼160, 150∼165인 고순도의 것을 사용한다. 전체 조성물 중 상기 나프탈렌계 에폭시 수지와 다관능 에폭시 수지의 함량은 5∼20중량%의 범위가 되도록 한다. 이때 나프탈렌계 에폭시 수지와 다관능 에폭시 수지의 혼합 중량비는 4:6∼9:1의 범위가 되어야 한다. 에폭시 수지의 조성 중 다관능 에폭시 수지의 비율이 60중량%를 초과하는 경우 수지 조성물의 점도는 낮출 수 있으나, 내습특성이 저하되어 신뢰도가 저하되는 단점이 있으며, 10중량% 미만으로 사용되는 경우 조성물의 점도가 높아서 디스펜싱 공정에서의 작업성이 저하되는 문제점이 발생한다.As the naphthalene epoxy resin and the polyfunctional epoxy resin, those having high purity having an epoxy equivalent of 130 to 160 and 150 to 165, respectively, are used. The content of the naphthalene epoxy resin and the polyfunctional epoxy resin in the total composition is in the range of 5 to 20% by weight. At this time, the mixing weight ratio of the naphthalene epoxy resin and the polyfunctional epoxy resin should be in the range of 4: 6 to 9: 1. If the ratio of the polyfunctional epoxy resin in the composition of the epoxy resin exceeds 60% by weight, the viscosity of the resin composition may be lowered, but the moisture resistance is lowered, the reliability is lowered, the composition is used when less than 10% by weight Due to the high viscosity of the workability problem occurs in the dispensing process.

본 발명에서는 경화제로 하기 화학식 3으로 표시되는 알킬화 테트라하이드로프탈산 무수물과 하기 화학식 4로 표시되는 메틸테트라하이드로프탈산 무수물을 혼합하여 사용한다.In the present invention, an alkylated tetrahydrophthalic anhydride represented by the following formula (3) and methyltetrahydrophthalic anhydride represented by the following formula (4) are used as a curing agent.

상기 식에서 R1, R2 및 R3는 탄소수 4∼8의 알킬 혹은 알케닐기이다.In the above formula, R 1 , R 2 and R 3 are alkyl or alkenyl groups having 4 to 8 carbon atoms.

상기 알킬화 테트라하이드로프탈산 무수물 및 메틸테드라하이드로프탈산 무수물은 당량이 각각 210∼250, 150∼170인 고순도의 산무수물을 사용한다. 전체 조성물 중 상기 경화제의 함량은 5∼15중량%의 범위가 되도록 한다. 이때 알킬화 테트라하이드로프탈산 무수물과 메틸테드라하이드로프탈산 무수물의 혼합 중량비는 5:5∼9:1의 범위가 되어야 한다. 알킬화 테트라하이드로프탈산 무수물의 비율이 50중량% 미만으로 사용되는 경우 봉지재의 수분흡수율이 높아 신뢰성을 저하시키게 되며, 90중량%를 초과하여 사용되는 경우 점도가 높아지는 문제점이 발생한다.The alkylated tetrahydrophthalic anhydride and the methyltetrahydrophthalic anhydride use high purity acid anhydrides having an equivalent weight of 210 to 250 and 150 to 170, respectively. The content of the curing agent in the total composition is in the range of 5 to 15% by weight. In this case, the mixing weight ratio of the alkylated tetrahydrophthalic anhydride and methyltetrahydrophthalic anhydride should be in the range of 5: 5 to 9: 1. When the ratio of alkylated tetrahydrophthalic anhydride is used in less than 50% by weight, the water absorption rate of the encapsulant is high, which lowers the reliability, and when used in excess of 90% by weight, the viscosity increases.

본 발명에서 경화촉매로는 일반적으로 사용되는 촉매를 사용할 수 있다. 촉매 종류별로 같은 양을 사용할 경우 활성에 따라 겔화시간에 차이는 발생하나 사용량의 증감을 통하여 겔화시간을 조절할 수 있어 촉매의 종류에 대하여서는 국한되지 않는다. 바람직하게는 하기 화학식 5로 표시되는 이미다졸계 화합물을 사용한다.In the present invention, a catalyst generally used may be used as a curing catalyst. When the same amount is used for each type of catalyst, the gelation time is different depending on the activity, but the gelation time can be controlled by increasing or decreasing the amount of the catalyst. Preferably an imidazole compound represented by the following formula (5) is used.

상기 식에서 R1, R2 및 R3는 각각 수소원자, 메틸기, 에틸기, 페닐기, 시아노에틸기 또는 벤질기이다.In the above formula, R 1 , R 2 and R 3 are each a hydrogen atom, a methyl group, an ethyl group, a phenyl group, a cyanoethyl group or a benzyl group.

전체 조성물 중 상기 반응촉매의 함량은 0.1∼0.5중량%의 범위가 되도록 한다. The content of the reaction catalyst in the total composition is in the range of 0.1 to 0.5% by weight.

본 발명에서 무기충진제로는 그 평균입자크기가 0.1∼10.0㎛인 용융 또는 합성실리카를 사용한다. 전체 조성물 중 상기 충진제의 함량은 70∼80중량%의 범위가 되도록 한다. 70중량% 미만으로 무기충진제를 사용할 경우에는 충분한 충분한 강도와 저열팽창화를 실현할 수 없으며 또한 수분의 침투가 용이해져 신뢰성이 저하된다. 또한 80중량%를 초과하여 사용되는 경우 유동특성의 저하로 인한 성형성이 나빠질 우려가 있다.In the present invention, as the inorganic filler, molten or synthetic silica having an average particle size of 0.1 to 10.0 μm is used. The content of the filler in the total composition is in the range of 70 to 80% by weight. When the inorganic filler is used at less than 70% by weight, sufficient strength and low thermal expansion cannot be realized, and the penetration of moisture becomes easy and the reliability is lowered. In addition, when used in excess of 80% by weight there is a fear that the moldability due to the deterioration of the flow characteristics deteriorate.

본 발명의 액상 에폭시 수지 조성물에는 본 발명의 목적을 해하지 않는 범위 내에서 브로모 에폭시 등의 난연제, 삼산화안티몬, 수산화알루미나, 오산화안티몬 등의 난연조제, 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제, 카본블랙, 유·무기염료 등의 착색제, 에폭시 실란, 아미노 실란, 알킬 실란 등의 커플링제, 소포제 등이 필요에 따라 첨가될 수 있다.In the liquid epoxy resin composition of the present invention, flame retardants such as bromo epoxy, flame retardant aids such as antimony trioxide, alumina hydroxide and antimony pentoxide, higher fatty acids, higher fatty acid metal salts, ester waxes, and the like within the scope of not impairing the object of the present invention. Release agents, carbon blacks, coloring agents such as organic and inorganic dyes, coupling agents such as epoxy silanes, amino silanes, alkyl silanes, antifoaming agents and the like may be added as necessary.

본 발명의 액상 에폭시 수지 조성물은, 예를 들면 에폭시 수지, 경화제, 경화촉매, 무기 충진제 등을 동시에 또는 원료별로 순차적으로 필요에 따라 가열처리를 하면서 교반, 혼합, 분산시켜 제조될 수 있다. 이들 혼합물의 혼합, 교반, 분산 등의 장치는 특별히 한정되지 않으며, 교반, 가열장치를 구비한 혼합분쇄기, 3축 롤밀, 볼밀, 유성형 혼합기 등을 사용할 수 있다.The liquid epoxy resin composition of the present invention may be prepared by, for example, stirring, mixing, and dispersing an epoxy resin, a curing agent, a curing catalyst, an inorganic filler, or the like simultaneously or sequentially by heating each raw material as necessary. The apparatus for mixing, stirring, and dispersing these mixtures is not particularly limited, and a mixing grinder equipped with stirring and a heating device, a three-axis roll mill, a ball mill, a planetary mixer, and the like can be used.

본 발명에서의 액상 에폭시 수지 조성물의 점도는 25℃에서 45,000cps 이하, 바람직하게는 35,000cps 이하로 조절되는 것이 바람직하다. 상기 조성물의 점도가 45,000cps를 초과하는 경우 디스펜싱 공정에서의 작업성이 불량해지는 문제점이 있다. The viscosity of the liquid epoxy resin composition in the present invention is preferably adjusted to 45,000 cps or less, preferably 35,000 cps or less at 25 ° C. If the viscosity of the composition exceeds 45,000cps there is a problem that the workability in the dispensing process is poor.

본 발명의 액상 에폭시 수지 조성물을 사용하여 반도체 봉지재를 성형하는 경우 통상의 디스펜싱 공정을 사용할 수 있으며, 후경화는 120℃에서 0.5시간 이상 경화 후 170℃에서 0.5시간 이상 경화하는 것이 바람직하다. 170℃에서 0.5시간 이하 경화시에는 충분한 경화물 특성을 얻을 수 없으며, 120℃에서 0.5시간 미만 경화할 경우 경화 후에 공극이 발생되는 경우가 있다.When the semiconductor encapsulant is molded using the liquid epoxy resin composition of the present invention, a conventional dispensing process may be used, and the post-curing is preferably cured at 170 ° C. for 0.5 hours or more after curing at 120 ° C. for 0.5 hours or more. When cured at 170 ° C. for 0.5 hours or less, sufficient cured product properties cannot be obtained, and when cured at 120 ° C. for less than 0.5 hours, voids may occur after curing.

이하에서 실시예를 통하여 본 발명을 보다 상세하게 설명하고자 하나, 하기의 실시예는 설명의 목적을 위한 것으로 본 발명을 제한하고자 하는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the following Examples are for the purpose of explanation and are not intended to limit the present invention.

실시예Example  And 비교예Comparative example

표 1에 나타난 배합비대로 원료를 유성형 교반기에 투입한 후 교반, 혼합하여 에폭시 수지 조성물을 제조하였다. 제조된 에폭시 수지 조성물을 사용하여 시편을 제조하고 물성을 측정하여 그 결과를 표 1에 나타내었다.The raw materials were added to the planetary stirrer at the mixing ratio shown in Table 1, followed by stirring and mixing to prepare an epoxy resin composition. Specimens were prepared using the prepared epoxy resin composition and the physical properties thereof were shown in Table 1 below.

注) 1) DIC社 : HP-4032D1) DIC Corporation: HP-4032D

2) TriQuest社 : THPE-GE2) TriQuest: THPE-GE

3) Yuka shell社 : YL-9803) Yuka shell company: YL-980

4) Yuka shell社 : YH-3064) Yuka shell company: YH-306

5) DIC社 : B-5705) DIC: B-570

6) Shinetsu社 : KS-6036) Shinetsu Company: KS-603

[물성평가방법][Property evaluation method]

1) 점도1) viscosity

Cone & Plate 형 Brookfield 점도계를 사용하여 25℃ 에서 측정Measurement at 25 ° C using Cone & Plate Brookfield Viscometer

2) 유리전이온도(Tg), 열팽창계수2) Glass transition temperature (Tg), thermal expansion coefficient

TMA(Thermomechanical Analyser)로 평가 (승온속도 10℃/min)Evaluation by TMA (Thermomechanical Analyser)

3) 굴곡강도3) flexural strength

UTM(Universal Test Machine)을 이용하여 ASTM D190에 의거 평가Evaluation according to ASTM D190 using UTM (Universal Test Machine)

4) 흡수율4) Absorption rate

PCT(Pressure Cooker Tester, 121℃, 2기압)에서 24시간 흡습시킨 후 무게변화를 측정Weight change after 24 hours of absorption at PCT (Pressure Cooker Tester, 121 ℃, 2 atmospheres)

5) 열충격 시험(Temperature Cycle Test)5) Temperature Cycle Test

JEDEC, JESD22-A104 시험조건 C (-65℃/+150℃)으로 평가한 후 C-SAM 을 활용하여 박리평가JEDEC, JESD22-A104 Test Condition C (-65 ℃ / + 150 ℃), then peeled off using C-SAM

5) 신뢰성 평가(Precon Test)5) Precon Test

JEDEC, JESD22-A113 시험방법으로 Level 3에서 평가한 후 C-SAM 을 활용하여 박리평가Penetration evaluation using C-SAM after evaluating at Level 3 by JEDEC, JESD22-A113 test method

표 1의 물성 및 신뢰성 평가결과에서 볼 수 있듯이 나프탈렌 에폭시 수지의 경우 경화물의 유리전이 온도에 영향을 주며, 사용량의 증가에 따라 패키지의 내열특성이 향상되었다. 또한 알킬화 테트라하이드로프탈산 무수물의 함량 및 무기물 충진제의 사용량이 증가할수록 내습특성이 향상되어 패키지의 신뢰성을 향상 시키나, 많은 양을 사용할 경우 봉지재의 점도가 증가되어 작업성이 현저히 떨어졌으며, 너무 적은 양을 사용할 경우 봉지재의 점도가 낮아져 디스펜싱 공정시 봉지재의 양을 일정량으로 조절하기가 어려워 생산성이 저하되었다.As can be seen from the physical property and reliability evaluation results of Table 1, in the case of naphthalene epoxy resin, the glass transition temperature of the cured product was affected, and the heat resistance characteristics of the package were improved as the amount used increased. In addition, as the content of alkylated tetrahydrophthalic anhydride and the amount of the inorganic filler are increased, the moisture resistance is improved to improve the reliability of the package.However, when a large amount is used, the viscosity of the encapsulant is increased and the workability is significantly decreased. When used, the viscosity of the encapsulant is lowered, so that it is difficult to control the amount of the encapsulant to a certain amount during the dispensing process, thereby decreasing productivity.

결론적으로 에폭시 수지중 나프탈렌계 수지의 혼합비가 40중량% 이상이며, 경화제중 알킬화수지의 혼합비가 50중량% 이상이고, 액상 봉지재의 점도가 25,000∼40,000cps이며, 또한 무기물 충진량이 70~80중량% 사이인 경우 볼그리드 어레이 패키지에서의 안정된 작업성과 우수한 신뢰도 특성을 확보할 수 있었다.In conclusion, the mixing ratio of the naphthalene resin in the epoxy resin is 40% by weight or more, the mixing ratio of the alkylation resin in the curing agent is 50% by weight or more, the viscosity of the liquid encapsulant is 25,000-40,000cps, and the amount of the inorganic material is 70-80% by weight. In the case of the case, stable workability and excellent reliability characteristics of the ball grid array package were obtained.

본 발명에 의해 용매를 사용하지 않기 때문에 공정성이 우수할 뿐아니라, 내습성이 우수하며, 높은 내열특성으로 인하여 볼그리드어레이 패키지에 적용한 결과 매우 우수한 프리콘 신뢰도 특성과 열충격 신뢰도 특성을 나타내는 반도체 봉지용 액상 에폭시 수지 조성물을 제공할 수 있다.In the present invention, since the solvent is not used, not only the processability is excellent, but also the moisture resistance is excellent, and the high heat resistance property results in the application of the ball grid array package for semiconductor encapsulation, which shows very good precon reliability characteristics and thermal shock reliability characteristics. A liquid epoxy resin composition can be provided.

Claims (4)

에폭시 수지로서 하기 화학식 1로 표시되는 나프탈렌계 에폭시 수지 및 하기 화학식 2로 표시되는 다관능 에폭시 수지;As an epoxy resin, the naphthalene type epoxy resin represented by following formula (1) and the polyfunctional epoxy resin represented by following formula (2); 경화제로서 하기 화학식 3으로 표시되는 알킬화 테트라하이드로프탈산 무수물 및 하기 화학식 4로 표시되는 메틸테트라하이드로프탈산 무수물을 혼합 중량비로 5:5∼9:1 함유하고;An alkylated tetrahydrophthalic anhydride represented by the following general formula (3) and methyltetrahydrophthalic anhydride represented by the following general formula (4) as a curing agent: 5: 5 to 9: 1 in a mixed weight ratio; 경화촉매; 및Curing catalyst; And 무기 충진제를 필수성분으로 하고, 용매를 포함하지 않는 반도체 봉지용 액상 에폭시 수지 조성물.Liquid epoxy resin composition for semiconductor sealing which has an inorganic filler as an essential component, and does not contain a solvent. [화학식 1][Formula 1] [화학식 2][Formula 2] [화학식 3][Formula 3] 상기 식에서 R1, R2 및 R3는 탄소수 4∼8의 알킬 혹은 알케닐기이다.In the above formula, R 1 , R 2 and R 3 are alkyl or alkenyl groups having 4 to 8 carbon atoms. [화학식 4][Formula 4] 제 1항에 있어서, 상기 경화촉매가 하기 화학식 5로 표시되는 이미다졸계 화합물인 것을 특징으로 하는 반도체 봉지용 액상 에폭시 수지 조성물.The liquid epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the curing catalyst is an imidazole compound represented by the following formula (5). [화학식 5][Formula 5] 상기 식에서 R1, R2 및 R3는 각각 수소원자, 메틸기, 에틸기, 페닐기, 시아노에틸기 또는 벤질기이다.In the above formula, R 1 , R 2 and R 3 are each a hydrogen atom, a methyl group, an ethyl group, a phenyl group, a cyanoethyl group or a benzyl group. 제 1항에 있어서, 전체 조성물 중 상기 에폭시 수지의 함량이 5∼20중량%이고, 상기 경화제의 함량이 5∼15중량%이며, 상기 경화촉매의 함량이 0.1∼0.5중량%이고, 상기 무기 충진제의 함량이 70∼80중량%이며, 상기 에폭시 수지에서 나프탈렌계 에폭시 수지와 다관능 에폭시 수지의 혼합 중량비가 4:6∼9:1인 것을 특징으로 하는 반도체 소자 봉지용 액상 에폭시 수지 조성물.According to claim 1, wherein the content of the epoxy resin in the total composition is 5 to 20% by weight, the content of the curing agent is 5 to 15% by weight, the content of the curing catalyst is 0.1 to 0.5% by weight, the inorganic filler The content of is 70 to 80% by weight, the liquid epoxy resin composition for semiconductor element encapsulation, characterized in that the mixing weight ratio of naphthalene-based epoxy resin and polyfunctional epoxy resin in the epoxy resin is 4: 6 to 9: 1. 제 1항 내지 3항 중 어느 하나의 항에 의한 액상 에폭시 수지 조성물을 이용하여 봉지된 볼그리드 어레이형 반도체.A ball grid array semiconductor encapsulated using the liquid epoxy resin composition according to any one of claims 1 to 3.
KR10-2001-0087499A 2001-12-28 2001-12-28 Liquid Epoxy Resin Composition for Encapsulating Semiconductor Device KR100479858B1 (en)

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