KR100398042B1 - Apparatus for depositing a single-crystal silicon and method of cleaning a quiartz tube in the apparatus - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single crystal silicon deposition apparatus and a method for cleaning a quartz tube of the apparatus, the apparatus for depositing single crystal silicon by a tube type ultra high vacuum chemical vapor deposition (UHV-CVD) method. Quartz tube cleaning can be configured by in-situ HCL cleaning method, so that tube type UHV-CVD single crystal silicon deposition apparatus can maximize process productivity and equipment management. It relates to a quartz tube cleaning rice method of the device.

Description

Apparatus for depositing a single-crystal silicon and method of cleaning a quiartz tube in the apparatus}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single crystal silicon deposition apparatus and a method for cleaning a quartz tube of the apparatus, the apparatus for depositing single crystal silicon by a tube type ultra high vacuum chemical vapor deposition (UHV-CVD) method. Quartz tube cleaning can be configured by in-situ HCL cleaning method, so that tube type UHV-CVD single crystal silicon deposition apparatus can maximize process productivity and equipment management. A method for cleaning a quartz tube of this apparatus.

In general, the single crystal silicon deposition process has become one of the key processes that are highly applicable to not only memory semiconductors but also non-memory semiconductors. Epi-wafer development and selective epitaxial growth of silicon (SEG) are typical processes. Conventional techniques for single crystal silicon deposition are divided into low chemical vapor deposition (LPCVD) and ultra high vacuum chemical vapor deposition (UHV-CVD). The LPCVD method is easy to process and has good productivity for epi-wafer fabrication. However, the LPCVD method has a high thermal budget of 800 ° C. or higher. The UHV-CVD method is relatively low temperature, but the process is difficult, and the process margin for SEG is not so large that a single wafer type UHV-CVD single crystal silicon deposition apparatus is activated.

The core of the single crystal silicon deposition process is good quality, productivity, and low thermal budget.In terms of quality and thermal budget, the single wafer type UHV-CVD single crystal silicon deposition device is superior but productive. Considering the side, the tube type UHV-CVD single crystal silicon deposition apparatus will be most advantageous.

However, the tube-type UHV-CVD single crystal silicon deposition apparatus has a big problem associated with the quartz tube cleaning method. Existing devices have attempted to solve the thin film coated on the quartz tube by the ex-situ wet-cleaning method.

The conventional tube type UHV-CVD single crystal silicon deposition apparatus has the following problems.

First, there is no special in-situ cleaning method when silicon is coated on the quartz tube, so that wet-cleaning is performed by ex-situ. This takes a lot of unnecessary time and manpower.

Second, if a slight change in the process of resetting the cleaned tube, the process conditions are much different, which is disadvantageous in terms of process stability.

Third, extra time is needed for process monitors.

As such, in order to put the existing tube type UHV-CVD apparatus into practical use, it is necessary to solve the process margin and cleaning problems.

Accordingly, the present invention is directed to in-situ HCl cleaning in an ex-situ wet-cleaning method of a tube type UHV-CVD single crystal silicon deposition apparatus. It is an object of the present invention to provide a tube type UHV-CVD single crystal silicon deposition apparatus which can be performed by an HCL cleaning method and a quartz tube cleaning method of the apparatus.

Tube type UHV-CVD single crystal silicon deposition apparatus according to the present invention for achieving this object is a quartz tube capable of simultaneously depositing single crystal silicon on a plurality of wafers, an elevator system for loading the wafer into the quartz tube, Installed in the elevating system, loaded into the quartz tube by the elevating system after a single crystal silicon deposition process, cleaned the quartz tube by an in-situ HCl cleaning method, and out of the quartz tube by an elevating system An unloaded tube cleaner, a reactor chamber for heating the quartz tube by a high frequency heater, a turbo-molecular pump installed at a position perpendicular to the reactor chamber, installed behind the turbo-molecular pump, and connected to the reactor chamber. A roughing pump, a gas inlet fixed to the quartz tube, Characterized in that configured to include a door installed between the reactor chamber and the wafer loading chamber group.

In addition, the tube type UHV-CVD single crystal silicon deposition apparatus according to the present invention comprises a quartz tube capable of simultaneously depositing single crystal silicon on a plurality of wafers, an elevating system for loading the wafer into the quartz tube, and a high frequency heater. A reactor lamp for heating the quartz tube, a halogen lamp installed next to the high frequency heater, a halogen lamp for cleaning the quartz tube by an in-situ HCl cleaning method after a single crystal silicon deposition process, and a turbo- installed at a position perpendicular to the reactor chamber. And a roughing pump installed behind the turbo-molecular pump, connected to the reactor chamber, a gas inlet fixed to the quartz tube, and a door provided between the reactor chamber and the wafer loading chamber. It features.

In addition, the quartz tube cleaning method of the tube type UHV-CVD single crystal silicon deposition apparatus according to the present invention discharges a plurality of wafers on which single crystal silicon is deposited from the quartz tube of the reactor chamber, and then cleans the quartz tube in-situ. To do this, loading a tube cleaner into the quartz tube; Maintaining the surface temperature of the quartz tube at a high temperature by the tube cleaner; Flowing HCl and H ₂ into the quartz tube; Exhausting the cleaning product gas in the quartz tube; And unloading the tube cleaner from the quartz tube.

In addition, the quartz tube cleaning method of the tube type UHV-CVD single crystal silicon deposition apparatus according to the present invention discharges a plurality of wafers on which single crystal silicon is deposited from the quartz tube of the reactor chamber, and then cleans the quartz tube in-situ. To maintain the surface temperature of the quartz tube at a high temperature by means of a halogen lamp installed around the quartz tube of the reactor chamber; Flowing HCl and H ₂ into the quartz tube; And discharging the cleaning product gas in the quartz tube.

1 is a front schematic view of a vertical tube type UHV-CVD single crystal silicon deposition apparatus according to a first embodiment of the present invention;

FIG. 2A is a schematic side view of the FIG. 1 device showing a wafer loading state. FIG.

2B is a schematic side view of the device of FIG. 1 showing a tube cleaner loading state;

3 is a front schematic view of a vertical tube type UHV-CVD single crystal silicon deposition apparatus according to a second embodiment of the present invention;

<Explanation of symbols for the main parts of the drawings>

1: gas inlet 2: door

3: elevator system 4: turbo-molecular pump

5: roughing pump 6: reactor chamber

7: high frequency burner 8: quartz tube

10: wafer 11: tube cleaner

13: wafer loading chamber 110: halogen lamp

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a front schematic view of a vertical tube type UHV-CVD single crystal silicon deposition apparatus according to a first embodiment of the present invention, FIG. 2A is a side schematic view of the apparatus of FIG. 1 showing a wafer loading state, 2B is a side schematic view of the apparatus of FIG. 1 showing the tube cleaner loading state.

The UHV-CVD single crystal silicon deposition apparatus basically includes a quartz tube 8 capable of simultaneously depositing single crystal silicon on 25 to 100 wafers 10. The wafer 10 is moved from bottom to top by an elevating system 3 and mounted in the quartz tube 8. Before depositing single crystal silicon, the base pressure is lowered below 10 ^-8 Torr to enable in-situ vacuum cleaning. The pump is installed with a large turbo-molecular pump 4 in a position perpendicular to the upper reactor chamber 6 followed by a roughing pump 5. do. Meanwhile, the roughing pump 5 is connected to the lower wafer loading chamber 13 to perform pressure control. The gas inlet 1 is fixed to the quartz tube 8. A door 2 is installed between the upper reactor chamber 6 and the lower wafer loading chamber 13, and after wafer loading, the door 2 is completely closed to control the vacuum state. The upper reactor chamber 6 is configured to heat the quartz tube 8 by way of a high frequency heater (RF heater) 7. It is advantageous to maintain uniform temperature at 600 ~ 800 ℃ of single crystal silicon process temperature and has the advantage of relatively easy installation.

In this basic structure, a tube cleaner 11 is installed in the elevator system 3 to clean the quartz tube 8 by an in-situ HCl cleaning method. . The tube cleaner 11 is composed of a halogen lamp assembly. The tube cleaner 11, which is a halogen lamp assembly, is enclosed in quartz outside. When the tube cleaner 11 is loaded into the quartz tube 8, the distance between the tube cleaner 11 and the quartz tube 8 is maintained at 5 to 10 cm, and the lower portion of the tube cleaner 11 and the door ( 2) is based on being joined to withstand less than 10 ^-3 Torr. A tube cleaner 11 self-connecting flexible tube out-put the cleaning product gas from the upper reactor chamber 6 to the roughing pump 5.

The concept of loading the wafer 10 and tube cleaner 11 into the upper reactor chamber 6 with an elevating system 3 is shown in FIGS. 2A and 2B.

FIG. 2A shows the wafer 10 loaded by the elevating system 3, FIG. 2B out-puts the wafer 10 after the monocrystalline silicon deposition process is completed on the wafer, and the tube cleaner It is shown that 11 is loaded into the quartz tube 8.

3 is a front schematic view of a vertical tube type UHV-CVD single crystal silicon deposition apparatus according to a second embodiment of the present invention.

Since the basic structure of the deposition apparatus according to the second embodiment is the same as that described in the first embodiment, a detailed description thereof will be omitted, and an in-situ HCl cleaning method without installing the tube cleaner 11 will be described. A halogen lamp 110 is installed next to the high frequency heater 7 so as to clean the quartz tube 8 by means of.

The quartz tube cleaning method in the vertical tube type UHV-CVD single crystal silicon deposition apparatus of the first embodiment of the present invention described above is as follows.

25-100 wafers are loaded into the quartz tube 8 of the reactor chamber by the elevator system 3 to perform a single crystal silicon deposition process, and then the wafers 10 are out-put. ), And the tube cleaner 11 installed in the elevator system 3 is loaded into the quartz tube 8. After the tube cleaner 11 is loaded, the base pressure is maintained at 10 ⁻⁴ to 10 ⁻³ Torr. The tube cleaner 11 is composed of a halogen lamp assembly, the outside of which is sealed with quartz.

During the single crystal silicon deposition process, the quartz tube 8 is coated with silicon. In order to clean the quartz tube 8 in-situ, the quartz is cleaned by the halogen lamp assembly of the tube cleaner 11. the surface temperature of the tube 8 is maintained around 1100 ~ 1300 ℃, and in this state through the gas inlet (1) gives flowing HCl to approximately 1 ~ 20slm, 5 ~ 50slm the H ₂ into the quartz tube 8. In the in-situ tube cleaning process, the pressure is in the range of 5 to 250 Torr, and based on 150% or more of the silicon process target to completely clean the silicon coated on the quartz tube 8. The in-situ tube cleaning process is based on the cleaning process being performed only by the operation of the roughing pump (5), not through the turbo-molecular pump (4). The cleaning product gas is discharged out of the reactor chamber 6 through a roughing pump 5 connected to the cleaner 11 self-connecting flexible tube.

The tube cleaner 11 is then unloaded by the elevating system 3 and ready for the next single crystal silicon deposition process.

The quartz tube cleaning method in the vertical tube type UHV-CVD single crystal silicon deposition deposition of the second embodiment of the present invention described above is as follows.

25-100 wafers are loaded into the quartz tube 8 of the reactor chamber by the elevator system 3 to perform a single crystal silicon deposition process, and then the wafers 10 are out-put. )do.

During the single crystal silicon deposition process, the quartz tube 8 is coated with silicon. In order to clean the quartz tube 8 in-situ, a halogen lamp is installed next to the high frequency heater 7. The lamp 110 maintains the surface temperature of the quartz tube 8 at about 1100 to 1300 ° C. In this state, HCl is 1-20 slm and H ₂ is introduced into the quartz tube 8 through the gas inlet 1. Spill about 5 ~ 50 slm. In the in-situ tube cleaning process, the pressure is in the range of 5 to 250 Torr, and based on 150% or more of the silicon process target to completely clean the silicon coated on the quartz tube 8. The in-situ tube cleaning process is based on the cleaning process being performed only by the operation of the roughing pump (5), not through the turbo-molecular pump (4). The cleaning product gas inside the reactor chamber 6 is out-putted through a roughing pump 5 connected to a flexible tube connected to the second (2).

The tube cleaner 11 is then unloaded by the elevating system 3 and ready for the next single crystal silicon deposition process.

As mentioned above, the technical principle of the present invention is explained in two ways.

First, in-situ tube cleaning is performed by using a tube cleaner in order to increase the practical possibility of the tube type UHV-CVD single crystal silicon deposition apparatus. After the single crystal silicon deposition process is finished, the portion where silicon is coated is the inner wall of the quartz tube. A tube cleaner composed of a halogen lamp assembly can heat the quartz tube inner wall to 1100 ° C. or higher. In a situation where the inside of the quartz tube is heated to 1100 ° C. or more, HCl gas flows into the gas inlet, and the silicon film may be etched in 5000 kPa or more within about 1 minute.

Second, in-situ tube cleaning is performed by using a halogen lamp installed around a quartz tube separately from a high frequency heater in order to increase the practical possibility of the tube type UHV-CVD single crystal silicon thin film deposition apparatus. After the single crystal silicon deposition process is finished, the portion where silicon is coated is the inner wall of the quartz tube. The halogen lamp can heat the quartz tube inner wall to 1100 ° C. or higher. In a situation where the inside of the quartz tube is heated to 1100 ° C. or more, HCl gas flows into the gas inlet, and the silicon film may be etched in 5000 kPa or more within about 1 minute.

As described above, the present invention can achieve the following effects by performing in-situ quartz tube cleaning in the development of the tube type UHV-CVD single crystal silicon deposition apparatus.

First, it is drastically shortened by manpower and time compared to conventional ex-situ cleaning.

Second, since the quartz tube is not touched, there is no change in process conditions before and after cleaning, so it is stable in the process.

Third, separate process monitor time can be reduced after quartz tube cleaning, thereby increasing process productivity.

Fourth, by increasing the possibility of using a productive tube-type UHV-CVD single crystal silicon deposition device, it is possible to advance the application of epi-wafer or SEG process and improve the economics of semiconductor device development.

Claims (27)

A quartz tube capable of simultaneously depositing single crystal silicon on multiple wafers, An elevation system for loading the wafer into the quartz tube; Installed in the elevating system, loaded into the quartz tube by the elevating system after a single crystal silicon deposition process, cleaned the quartz tube by an in-situ HCl cleaning method, and out of the quartz tube by an elevating system Unloaded tube cleaners, A reactor chamber for heating the quartz tube by a high frequency heater; A turbo-molecular pump installed at a position perpendicular to the reactor chamber, A roughing pump installed behind the turbo-molecular pump and connected to the reactor chamber; A gas inlet fixed to the quartz tube, Single crystal silicon deposition equipment comprising a door installed between the reactor chamber and the wafer loading chamber. The method of claim 1, Wherein said tube cleaner is comprised of a halogen lamp assembly. The method of claim 2, The halogen lamp assembly is a single crystal silicon deposition apparatus, characterized in that the outer periphery is sealed with quartz. The method of claim 1, When the tube cleaner is loaded into the quartz tube, the interval between the tube cleaner and the quartz tube is maintained 5 ~ 10cm, characterized in that the device. The method of claim 1, The tube cleaner is a single crystal silicon deposition apparatus, characterized in that for maintaining the surface temperature of the quartz tube at 1100 ~ 1300 ℃ during the in-situ HCl cleaning. The method of claim 1, The in-situ HCl cleaning is performed by flowing HCl through 1 to 20 slm and H ₂ through 5 to 50 slm into the quartz tube through the gas inlet. The method of claim 1, The in-situ HCl cleaning is a single crystal silicon deposition apparatus, characterized in that at a pressure in the range of 5 ~ 250 Torr. The method of claim 1, And after the in-situ HCl cleaning, exhaust the cleaning product gas inside the reactor chamber through the roughing pump. A quartz tube capable of simultaneously depositing single crystal silicon on multiple wafers, An elevation system for loading the wafer into the quartz tube; A reactor chamber for heating the quartz tube by a high frequency heater; A halogen lamp installed next to the high frequency heater and cleaning the quartz tube by an in-situ HCl cleaning method after a single crystal silicon deposition process; A turbo-molecular pump installed at a position perpendicular to the reactor chamber, A roughing pump installed behind the turbo-molecular pump and connected to the reactor chamber; A gas inlet fixed to the quartz tube, Single crystal silicon deposition equipment comprising a door installed between the reactor chamber and the wafer loading chamber. The method of claim 9, The halogen lamp is a single crystal silicon deposition apparatus, characterized in that for maintaining the surface temperature of the quartz tube at 1100 ~ 1300 ℃ during the in-situ HCl cleaning. The method of claim 9, The in-situ HCl cleaning is performed by flowing HCl through 1 to 20 slm and H ₂ through 5 to 50 slm into the quartz tube through the gas inlet. The method of claim 9, The in-situ HCl cleaning is a single crystal silicon deposition apparatus, characterized in that at a pressure in the range of 5 ~ 250 Torr. The method of claim 9, And after the in-situ HCl cleaning, exhaust the cleaning product gas inside the reactor chamber through the roughing pump. Ejecting a plurality of wafers with single crystal silicon deposited from the quartz tube of the reactor chamber, and then loading a tube cleaner into the quartz tube to clean the quartz tube in-situ; Maintaining the surface temperature of the quartz tube at 1100 to 1300 ° C. by the tube cleaner and maintaining the internal pressure of the quartz tube at 5 to 250 Torr; Flowing HCl and H ₂ into the quartz tube, the HCl flowing in an amount of about 1 to 20 slm, and the H ₂ flowing in an amount of about 5 to 50 slm; Evacuating a cleaning product gas in the quartz tube; And And unloading said tube cleaner from said quartz tube. delete The method of claim 14, And the tube cleaner is loaded and unloaded by an elevating system. The method of claim 14, Maintaining the basic pressure at 10 ⁻⁴ to 10 ⁻³ Torr after the tube cleaner is loaded. delete delete The method of claim 14, The in-situ tube cleaning method of the quartz tube cleaning method of a single crystal silicon deposition apparatus, characterized in that performed at least 150% of the silicon deposition process target. The method of claim 14, And the cleaning product gas is discharged through the roughing pump. After discharging a plurality of wafers in which single crystal silicon is deposited from the quartz tube of the reactor chamber, and then cleaning the quartz tube in-situ, the surface temperature of the quartz tube by a halogen lamp installed around the quartz tube of the reactor chamber Maintaining at 1100 to 1300 ° C., maintaining the internal pressure of the quartz tube at 5 to 250 Torr; Flowing HCl and H ₂ into the quartz tube, the HCl flowing in an amount of about 1 to 20 slm, and the H ₂ flowing in an amount of about 5 to 50 slm; And And discharging the cleaning product gas in the quartz tube. delete delete delete The method of claim 22, The in-situ tube cleaning method of the quartz tube cleaning method of a single crystal silicon deposition apparatus, characterized in that performed at least 150% of the silicon deposition process target. The method of claim 22, And the cleaning product gas is discharged through a roughing pump.