TW201537660A - Apparatus for processing substrate - Google Patents

Abstract

Provided is an apparatus for processing a substrate. The apparatus for processing a substrate, in which a process is performed on the substrate, includes a lower chamber having an opened upper portion and a passage, through which the substrate is accessible, in one side thereof, an outer reaction tube configured to close the opened upper portion of the lower chamber, thereby providing a process space in which the process is performed, a substrate holder in which at least substrate is vertically stacked, the substrate holder being switched between a stacking position at which the substrate is stacked in the substrate holder and a process position at which the process is performed on the substrates, and a gas supply unit disposed in the outer reaction tube to supply a reaction gas into the reaction region, thereby generating a reaction gas flow having phase differences different from each other in a vertical direction.

Description

Equipment for processing substrates

The present invention relates to an apparatus for processing a substrate, and more particularly to an apparatus for processing a substrate in which a plurality of heaters are disposed at different heights from each other to heat a process space at different temperatures from each other according to the height.

A typical selective epitaxy process involves a deposition reaction and an etching reaction. The deposition and etching reactions are performed simultaneously on the polycrystalline layer and the epitaxial layer at relatively different reaction rates. During the deposition process, an epitaxial layer is formed on the surface of the single crystal, and an existing polycrystalline layer and/or amorphous layer is deposited on at least one of the second layers. However, the deposited polycrystalline layer can be etched at a rate greater than the rate of the epitaxial layer. Thus, as the concentration of etchant gas changes, a net selective process can result in deposition of epitaxial materials and limited or non-finite deposition of polycrystalline materials. For example, in a selective epitaxial process, an epitaxial layer formed of a germanium-containing material can be formed on the surface of a single crystal germanium without allowing the deposited material to remain on the spacer.

In the selective epitaxial process, a heater using a common heating wire is used as a heating source for heating the process space. However, due to the heater using the heating wire The heat temperature is used for a long time when it changes in the process space, so the production amount may be lowered.

[Prior Art Literature] [Patent Literature]

(Patent Document 1) International Publication No. 2008/073926 (June 19, 2008)

(Patent Document 2) Korean Patent Publication No. 10-2009-0035430 (April 9, 2009).

The present invention provides an apparatus for processing a substrate in which a process space is heated at different temperatures according to height.

The present invention also provides an apparatus for processing a substrate in which the temperature of the process space changes rapidly.

The present invention also provides an apparatus for processing a substrate capable of increasing the throughput of substrate processing.

Another object of the present invention will become apparent from the following detailed description and the drawings.

According to an exemplary embodiment, an apparatus for processing a substrate for performing a process on a substrate includes: a lower chamber having an open upper portion and a passage in one side thereof, The channel is adjacent to the substrate; an external reaction tube disposed to close the open upper portion of the lower chamber to provide a process space in which the process is performed; a substrate holder, at least The board is vertically stacked therein, the substrate holder is switched between a stacking position and a process position, in which the substrate is stacked in the substrate holder, in the process position, The substrate performs the process; an internal reaction tube disposed in the external reaction tube, the internal reaction tube being disposed around the substrate holder disposed at the process position to be divided relative to the substrate a reaction zone; a gas supply unit disposed in the external reaction tube to supply a reaction gas into the reaction zone; and a plurality of heaters disposed to surround the external reaction tube at different heights from each other, The process space is further heated.

The heaters may have different heating temperatures from each other.

Each of the heaters may include: an annular heater tube having an internal space filled with a halogen gas, wherein a portion of a circumference of the heater tube is open; a heating wire, Disposed in the interior space of the heater tube to emit light; a pair of terminal portions coupled to each of the two open ends of the heater tube to seal the interior space, the pair A terminal portion is electrically connected to the heating wire; and a power source electrically connected to the terminal portion to supply a current into the heating wire.

The currents supplied from the power source to the plurality of heaters may have different strengths from each other.

The apparatus may further include an insulating frame disposed to surround the outer reaction tube, the insulating frame having a plurality of insertion grooves recessed from an inner circumferential surface thereof, wherein the heater tube may be inserted into The insertion is in each of the grooves.

The insulating frame may be formed of a heat insulating material.

The apparatus may further include a cover having a plurality of through holes in one surface thereof, through which the terminal portions are exposed, the cover being disposed to surround the insulating frame, wherein the through holes are The zigzag shape is vertically disposed within the process space.

1‧‧‧Semiconductor manufacturing equipment

2‧‧‧Processing equipment

3‧‧‧Device front-end module

4‧‧‧Interface wall

50‧‧‧Frame

60‧‧‧Loading

70‧‧‧Frame Robot

72‧‧‧Oxide

74‧‧‧Extended surface

76‧‧‧ Epilayer

102‧‧‧Transfer chamber

104‧‧‧Substrate handler

106‧‧‧Load lock chamber

108a, 108b‧‧‧Clean chamber

110‧‧‧buffer chamber

112a, 112b, 112c‧‧‧Extension cavity room

312a‧‧‧External reaction tube

312b‧‧‧lower chamber

314‧‧‧Internal reaction tube

316‧‧‧ Thermal resistance baffle

318‧‧‧Rotary axis

318a‧‧‧ bellows

319‧‧‧ channel

319a‧‧‧ Lift motor

319b‧‧‧Rotary motor

319c‧‧ ‧ motor cover

319d‧‧‧ bracket

319e‧‧‧lower guide

324‧‧‧ Cover

324a‧‧‧through hole

325‧‧‧Insulation frame

325a‧‧‧ Groove

326‧‧‧heater

326a‧‧‧heater tube

326b‧‧‧heat wire

326c‧‧‧Terminal part

326d‧‧‧ wire

327‧‧‧Support frame

328‧‧‧Sheet holder

328a‧‧‧Assisted exhaust 埠

328b‧‧‧Auxiliary exhaust line

328c‧‧‧First auxiliary valve

328d‧‧‧Second auxiliary valve

332‧‧‧First exhaust line

332a‧‧‧Supply tube

332b‧‧‧Supply nozzle

332c‧‧‧Supply hole

332d‧‧‧injection plate

332e‧‧ ‧ injection hole

334‧‧‧Exhaust nozzle

334a‧‧‧Exhaust pipe

334b‧‧‧Exhaust nozzle

334c‧‧‧ venting holes

337‧‧‧Upper lifting rod

338‧‧‧ Lifting motor

342‧‧‧First exhaust line

343‧‧‧Connecting line

343a‧‧‧Connecting valve

344‧‧‧Exhaust gas

348‧‧‧ turbo pump

352‧‧‧Second exhaust line

362‧‧‧Auxiliary gas supply埠

372‧‧‧Supply pipeline

374‧‧‧through hole

376‧‧‧through hole

382, 384‧‧‧ thermocouple

419‧‧‧ Lifting rod

442‧‧‧Support flange

S‧‧‧Substrate

S10~S80‧‧‧ operation

The exemplary embodiments may be understood in more detail by the following description in conjunction with the accompanying drawings in which: FIG. 1 is a schematic diagram of a semiconductor manufacturing apparatus according to an exemplary embodiment.

2(a), (b), and (c) are views of a substrate processed in accordance with an exemplary embodiment.

FIG. 3 is a flow chart of a method for forming an epitaxial layer, in accordance with an exemplary embodiment.

4 is a schematic view of the epitaxial device of FIG. 1.

Figure 5 is a cross-sectional view of the lower chamber and substrate holder of Figure 1.

Fig. 6 is a schematic cross-sectional view of the external reaction tube, the internal reaction tube, the supply nozzle, and the exhaust nozzle of Fig. 1.

Figure 7 is a cross-sectional view illustrating the arrangement of the supply nozzles of Figure 1 and the arrangement of the thermocouples.

Figure 8 is a cross-sectional view illustrating the arrangement of the exhaust nozzle of Figure 1 and the arrangement of the thermocouple.

Figure 9 is a view of a plurality of supply lines connected to the supply nozzles of Figure 1, respectively.

Figure 10 is a view illustrating the flow of a reaction gas into the internal reaction tube of Figure 1.

Figure 11 is a view of a state in which the substrate holder of Figure 1 is switched into a process position.

Fig. 12 is a schematic perspective view illustrating a modified example of the supply nozzle of Fig. 6.

Figure 13 is a perspective view of the supply nozzle of Figure 12 .

Figure 14 is a cross-sectional view of the supply nozzle of Figure 12 .

Figure 15 is a view illustrating the flow of a reaction gas through the supply nozzle and the exhaust nozzle of Figure 12 .

Fig. 16 is a schematic perspective view illustrating a modified example of the supply nozzle of Fig. 13.

17 is a cross-sectional view of the supply nozzle of FIG. 16.

Figure 18 is a front elevational view showing the arrangement of the cover, the insulating frame and the heater of Figure 11;

Fig. 19 is a side view showing the arrangement of the heater tube, the terminal portion, and the wires of Fig. 11.

Figure 20 is a cross-sectional view taken along line A-A' of Figure 19.

21(a) is a plan view of the heater of FIG. 20, and FIG. 21(b) is a cross-sectional view of the heater of FIG. 20.

Hereinafter, an exemplary embodiment will be described in more detail with reference to FIGS. 1 through 17. However, the invention may be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and Communicate to those skilled in the art. In the figures, the dimensions of layers and regions are exaggerated for clarity of the description.

Although the epitaxial process is described below as an example, the present invention is applicable to various semiconductor fabrication processes including epitaxial processes. FIG. 1 is a schematic diagram of a semiconductor manufacturing apparatus 1 according to an exemplary embodiment. The semiconductor manufacturing equipment 1 includes a process equipment 2, an equipment front end module (EFEM) 3, and an interface wall 4. The EFEM 3 is mounted on the front side of the process equipment 2 to transfer the wafer W between the container (not shown) in which the substrate S is housed and the process equipment 2.

The EFEM 3 includes a plurality of loading cassettes 60 and a frame 50. The frame 50 is placed between the loading magazine 60 and the process equipment 2. The container for accommodating the substrate S is placed on the loading cassette 60 by a transfer unit (not shown) such as an overhead transfer, an overhead conveyor or an automatic guided vehicle.

A container for sealing (for example, a front open unified pod (FOUP)) can be used as the container. A frame robot 70 for transferring the substrate S between the container placed on the loading cassette 60 and the process device 2 is disposed within the frame 50. A door opener (not shown) for automatically opening/closing the door of the container may be disposed within the frame 50. Moreover, a fan screening program unit (FFU) for supplying clean air into the frame 50 such that clean air flows downward within the frame 50 may be disposed in the frame 50.

A predetermined process is performed on the substrate S within the process device 2. The process device 2 includes a transfer chamber 102, a load lock chamber 106, and cleaning Chambers 108a and 108b, buffer chamber 110, and epitaxial chambers (or epitaxial devices) 112a, 112b, and 112c. The transfer chamber 102 can generally have a polygonal shape when viewed from above. Moreover, the load lock chamber 106, the cleaning chambers 108a and 108b, the buffer chamber 110, and the extension chambers 112a, 112b, and 112c are respectively disposed on the side surfaces of the transfer chamber 102.

The load lock chamber 106 can be disposed on a side surface of the transfer chamber 102 adjacent to the EFEM 3. Each of the substrates S may be temporarily held in the load lock chamber 106 and then loaded into the process apparatus 2 such that a predetermined process is performed on the substrate S. After the process is completed, the substrate S can be unloaded from the process device 2 and then temporarily held in the load lock chamber 106. The transfer chamber 102, the cleaning chambers 108a and 108b, the buffer chamber 110, and the epitaxial chambers 112a, 112b, and 112c are maintained in a vacuum state, and the load lock chamber is switched between a vacuum state and an atmospheric state. The load lock chamber 106 prevents introduction of external contaminants into the transfer chamber 102, the cleaning chambers 108a and 108b, the buffer chamber 110, and the epitaxial chambers 112a, 112b, and 112c. Moreover, although the substrate S is transferred, the substrate S may not be exposed to the air to prevent the growth of oxide on the substrate S.

Gate valves (not shown) are disposed between the load lock chamber 106 and the transfer chamber 102 and between the load lock chamber 106 and the EFEM 3. When the substrate S is transferred between the EFEM 3 and the load lock chamber 106, the gate valve disposed between the load lock chamber 106 and the transfer chamber 102 is closed. When the substrate S is transferred between the load lock chamber 106 and the transfer chamber 102, the gate valve disposed between the load lock chamber 106 and the EFEM 3 is closed.

The transfer chamber 102 includes a substrate handler 104. The substrate handler 104 transfers the substrate S between the load lock chamber 106, the cleaning chambers 108a and 108b, the buffer chamber 110, and the epitaxial chambers 112a, 112b, and 112c. Upon transfer of the substrate S, the transfer chamber 102 is sealed to remain in a vacuum state. The maintenance of the vacuum state can be used to prevent the substrate S from being exposed to contaminants (e.g., O ₂ , particulate materials, and the like).

Epitaxial chambers 112a, 112b, and 112c may be provided to form an epitaxial layer on the substrate S. In the current embodiment, three epitaxial chambers 112a, 112b, and 112c are provided. Since the epitaxial process requires a relatively long time when compared to a cleaning process, manufacturing throughput can be increased by a plurality of epitaxial chambers. Unlike the current embodiment, four or more epitaxial chambers or two or fewer epitaxial chambers may be provided.

The cleaning chambers 108a and 108b can clean the substrate S before performing the epitaxial process on the substrate S in the epitaxial chambers 112a, 112b, and 112c. In order to successfully perform the epitaxial process, the amount of oxide present on the crystalline substrate must be minimized. If the surface oxygen content of the substrate is too high, the oxygen atoms can interrupt the crystalline arrangement of the material to be deposited on the substrate. Therefore, this can have an adverse effect on the epitaxial process. For example, when performing germanium epitaxial deposition, excess oxygen on the crystalline substrate can allow the germanium atoms to displace oxygen atom clusters from their epitaxial positions in atomic units. This local atomic shifting element can cause errors in subsequent atomic arrangements when the layer is grown thicker. This phenomenon can be a so-called stacking faults or hillock defects. When the substrate is exposed to air while the substrate is being transferred, oxidation of the surface of the substrate may occur, for example. Therefore, it is possible to clean the chambers 108a and 108b. A cleaning process for removing native oxide (or surface oxide) formed on the substrate S is performed.

The cleaning process may be a dry etching process using hydrogen (H*) and NF ₃ gas having a free radical state. For example, upon etching yttrium oxide formed on the surface of the substrate, the substrate is disposed within the chamber, and then a vacuum atmosphere is created within the chamber to create an intermediate product that reacts with yttria within the chamber.

For example, the hydrogen radicals (H *), and for example, a fluoride gas (e.g., nitrogen fluoride (NF _3)), etc. The reaction gas is supplied into the chamber, as in the following reaction formula (1) expressed by The reaction gas is reduced to produce an intermediate such as NHxFy (wherein x and y are certain integers).

H*+NF ₃ =>NHxFy...(1)

Since the intermediate product has high reactivity with cerium oxide (SiO ₂ ), when the intermediate product reaches the surface of the ruthenium substrate, the intermediate product selectively reacts with ruthenium oxide to produce a reaction product ((NH _{4 ) 2} SiF ₆ ), as expressed in the following reaction formula (2).

NHxFy+SiO ₂ =>(NH ₄ ) ₂ SiF ₆ +H2O...(2)

Thereafter, when the tantalum substrate is heated to a temperature of about 100 ° C or higher, the reaction product is pyrolyzed as in the following reaction formula (3) to form a pyrolysis gas, and then the pyrolysis gas is evaporated. Therefore, yttrium oxide can be removed from the surface of the substrate. As shown in the following reaction formula (3), the pyrolysis gas contains a fluorine-containing gas such as HF gas or SiF ₄ gas.

(NH ₄ ) ₂ SiF ₆ =>NH ₃ +HF+SiF ₄ (3)

As described above, the cleaning process can include a reaction process for producing a reaction product and a heating process for pyrolysis reaction products. The reaction process and the heating process can be performed simultaneously in the cleaning chambers 108a and 108b. Alternatively, the reaction process can be performed in one of the cleaning chambers 108a and 108b, and the heating process can be performed in the other of the cleaning chambers 108a and 108b.

The buffer chamber 110 provides a space in which the substrate S on which the cleaning process has been completed is loaded, and a space in which the substrate S on which the epitaxial process has been performed is loaded. Upon completion of the cleaning process, the substrate S is transferred into the buffer chamber 110, and the substrate S is loaded into the buffer chamber 110 before the substrate S is transferred into the epitaxial chambers 112a, 112b, and 112c. The epitaxial chambers 112a, 112b, and 112c can be batch type chambers in which a single process is performed on a plurality of substrates. When the epitaxial process is completed in the epitaxial chambers 112a, 112b, and 112c, the substrate S on which the epitaxial process is performed is continuously loaded into the buffer chamber 110. Moreover, the substrate S on which the cleaning process has been completed is continuously loaded into the epitaxial chambers 112a, 112b, and 112c. Here, the substrate S can be vertically loaded into the buffer chamber 110.

2(a), (b), and (c) are views of a substrate processed in accordance with an exemplary embodiment. As described above, the cleaning process is performed on the substrates S in the cleaning chambers 108a and 108b before the epitaxial process is performed on the substrate S. Therefore, the oxide 72 formed on the surface of the substrate 70 can be removed by the cleaning process. The oxide 72 can be removed by the cleaning process within the cleaning chambers 108a and 108b. Moreover, the epitaxial surface 74 formed on the surface of the substrate 70 can be exposed by the cleaning process to assist in the growth of the epitaxial layer.

Thereafter, an epitaxial process is performed on the substrate 70 in the epitaxial chambers 112a, 112b, and 112c. The epitaxial process can be performed by chemical vapor deposition. The epitaxial process can be performed to form an epitaxial layer 76 on the epitaxial surface 74. It can be exposed by a reaction gas containing a helium gas (for example, SiCl ₄ , SiHCl ₃ , SiH ₂ Cl ₂ , SiH ₃ Cl, Si ₂ H ₆ or SiH ₄ ) and a carrier gas (for example, N ₂ and/or H ₂ ). An epitaxial surface 74 is formed on the substrate 70. Moreover, when the epitaxial layer 76 is required to contain a dopant, the helium-containing gas may comprise a dopant-containing gas (eg, AsH ₃ , PH _{3 ,} and/or B ₂ H ₆ ).

FIG. 3 is a flow chart of a method for forming an epitaxial layer, in accordance with an exemplary embodiment. In operation S10, a process for forming an epitaxial layer is started. In operation S20, the substrate S is transferred into the cleaning chambers 108a and 108b, and then an epitaxial process is performed on the substrate S. Here, the substrate handler 104 transfers the substrate S into the cleaning chambers 108a and 108b. The transfer of the substrate S is performed by the transfer chamber 102 in which the vacuum state is maintained. In operation S30, a cleaning process is performed on the substrate S. As described above, the cleaning process includes a reaction process for producing a reaction product and a heating process for pyrolysis reaction products. The reaction process and the heating process can be performed simultaneously in the cleaning chambers 108a and 108b. Alternatively, the reaction process can be performed in one of the cleaning chambers 108a and 108b, and the heating process can be performed in the other of the cleaning chambers 108a and 108b.

In operation S40, the substrate S on which the cleaning process has been completed is transferred into the buffer chamber 110 and stacked in the buffer chamber 110. Subsequently, the substrate S is reserved in the buffer chamber 110 to perform an epitaxial process. In operation S50, the substrate S is transferred into the epitaxial chambers 112a, 112b, and 112c. a transfer chamber through which a vacuum state is maintained The chamber 102 performs the transfer of the substrate S. In operation S60, an epitaxial layer may be formed on the substrate S. Thereafter, in operation S70, the substrate S is again transferred into the buffer chamber 110 and stacked in the buffer chamber 110. Subsequently, in operation S80, the process for forming the epitaxial layer ends.

4 is a schematic view of the epitaxial device of FIG. 1, and FIG. 5 is a cross-sectional view of the lower chamber and substrate holder of FIG. 1. The epitaxial device (or epitaxial chamber) includes a lower chamber 312b having an open upper portion. The lower chamber 312b is connected to the transfer chamber 102. The lower chamber 312b can have a passage 319 that is coupled to the transfer chamber 102 and can load the substrate S from the transfer chamber 102 to the lower chamber 312b through the passage 319. A gate valve (not shown) can be placed outside of the passage 319. Channel 319 can be opened or closed by a gate valve.

The epitaxial device includes a substrate holder 328 on which a plurality of substrates S are stacked. Here, the substrate S is vertically stacked on the substrate holder 328. For example, 15 substrates S can be stacked on the substrate holder 328. The substrate S may be stacked in the substrate holder 328 as the substrate holder 328 moves into the stacked space (or "stacked position") defined in the lower chamber 312b. Substrate holder 328 can be liftable as described below. Therefore, when the substrate S is stacked on the slot, the substrate holder 328 can be raised such that the substrate S is stacked on the next slot of the substrate holder 328. When all of the substrates S are stacked on the substrate holder 328, the substrate holder 328 can be moved into the external reaction tube 312a (or "process position"), and then the epitaxial process can be performed in the external reaction tube 312a.

The thermal resistance spacer 316 is disposed under the substrate holder 328 to be solid with the substrate The holder 328 rises or falls together. When the substrate holder 328 is switched into the process position, as illustrated in FIG. 11, the thermal resistance barrier 316 closes the open lower portion of the inner reaction tube 314. The thermal resistance spacer 316 may be formed of ceramic or quartz or a material in which the metal is coated with ceramic. The thermal resistance barrier 316 can block heat transfer from the reaction zone to the stacking space during the process. A portion of the reaction gas supplied to the reaction zone may be moved into the stacking space through the open lower portion of the internal reaction tube 314. Here, if the stacking space has a temperature greater than a predetermined temperature, the portion of the reactive gas may be deposited on the inner wall of the stacking space. Therefore, it is necessary to prevent the stack space from being heated by the heat resistance partition 316. Therefore, this prevents the reaction gas from being deposited on the inner wall of the stacking space.

The lower chamber 312b includes an exhaust port 344, an auxiliary exhaust port 328a, and an auxiliary gas supply port 362. The exhaust port 344 can have a "∟" shape. Exhaust nozzle 334, which will be described below, may be coupled to first exhaust line 342 through exhaust port 344. Moreover, the auxiliary exhaust port 328a is connected to the auxiliary exhaust line 328b, and the gas in the stacking space of the lower chamber 312b can be exhausted through the auxiliary exhaust port 328a.

The auxiliary gas supply port 362 is connected to an auxiliary gas supply line (not shown) to supply the gas supplied through the auxiliary gas supply line into the stacking space. For example, the inert gas may be supplied to the stacking space through the auxiliary gas supply port 362. The inert gas may be supplied into the stacking space to prevent the reaction gas supplied into the process space from moving into the stacking space.

More specifically, the inert gas may be continuously supplied into the stacking space and then discharged through the auxiliary exhaust port 328a to prevent the reverse supply to the process space. The gas should be moved into the stacking space. Here, the pressure in the stacking space may be slightly higher than the pressure in the process space. When the pressure in the stacking space is slightly higher than the pressure in the process space, the reaction gas in the process space may not move into the stacking space.

Fig. 6 is a schematic cross-sectional view of the external reaction tube, the internal reaction tube, the supply nozzle, and the exhaust nozzle of Fig. 1. The outer reaction tube 312a can close the open upper portion of the lower chamber 312b to provide a process space in which the epitaxial process is performed. The support flange 442 is disposed between the lower chamber 312b and the outer reaction tube 312a, and the outer reaction tube 312 is disposed on the support flange 442. The stacking space of the lower chamber 312b and the process space of the outer reaction tube 312a may be in communication with each other through an opening defined at the center of the support flange 442. As described above, when all of the substrates are stacked on the substrate holder 328, the substrate holder 328 can be moved into the process space of the outer reaction tube 312a.

The internal reaction tube 314 is disposed in the external reaction tube 312a to provide a reaction zone with respect to the substrate S. The inside of the outer reaction tube 312a can be divided into a reaction zone and a non-reaction zone by the internal reaction tube 314. The reaction zone can be defined in the internal reaction tube 314 and the non-reaction zone can be defined outside of the internal reaction tube 314. When the substrate holder 328 is switched into the process position, the substrate holder 328 can be disposed in the reaction zone. Here, the capacity of the reaction zone may be less than the capacity of the process space. Therefore, the use of the reaction gas can be minimized when the reaction gas is supplied into the reaction zone. In addition, the reaction gas may be concentrated on the substrate S stacked in the substrate holder 328. The inner reaction tube 314 can have a closed upper portion and an open lower portion. Therefore, the substrate holder 328 can be moved into the reaction zone through the lower portion of the internal reaction tube 314.

As illustrated in Figure 4, the heaters 326 have a ring shape to not be in each other. The same height surrounds the outer reaction tube 312a. The heater 326 can heat the process space in the outer reaction tube 312a. Therefore, the process space (or reaction zone) can reach a temperature at which the epitaxial process can be performed. The cover 324 is coupled to the upper lift bar 337 by a support frame 327. When the upper lifting rod 337 is rotated by the lifting motor 338, the support frame 327 can also be raised and lowered.

The epitaxial device further includes a gas supply unit. The gas supply unit includes a supply nozzle unit 332 and an exhaust nozzle unit 334. The supply nozzle unit 332 includes a plurality of supply tubes 332a and a plurality of supply nozzles 332b. The supply nozzles 332b are connected to the supply tubes 332a, respectively. Each of the supply nozzles 332b has a circular tube shape. A supply hole 332c may be defined in the front end of the supply nozzle 332b. Therefore, the reaction gas can be discharged through the supply hole 332c. The supply hole 332c has a circular cross section. As illustrated in FIG. 6, the supply nozzles 332b may be disposed such that the supply holes 332c have different heights from each other.

The supply pipe 332a and the supply nozzle 332b are disposed in the outer reaction tube 312a. The supply tube 332a extends vertically and the supply nozzle 332b is disposed substantially perpendicular to the supply tube 332a. The supply hole 332c is disposed inside the internal reaction tube 314. Therefore, the reaction gas discharged through the supply hole 332c can be concentrated into the reaction zone in the internal reaction tube 314. The internal reaction tube 314 has a plurality of through holes 374. The supply holes 332c of the supply nozzle 332b may be disposed inside the internal reaction tube 314 through the through holes 374, respectively.

Figure 7 is a cross-sectional view illustrating the arrangement of the supply nozzles of Figure 1 and the arrangement of the thermocouples. Referring to Fig. 7, the supply nozzle 332b has a plurality of supply holes 332c each having a circular cross section. The supply holes 332c of the supply nozzles 332b are disposed on the inner wall of the inner reaction tube 314 in the circumferential direction and have different heights from each other. Holding on the substrate When the switch 328 is switched into the process position, each of the supply nozzles 332b injects a reaction gas onto the substrate S placed on the substrate holder 328. Here, the height of the supply holes 332c may substantially correspond to the height of the substrate S, respectively. Referring to Figure 6, supply nozzles 332b can be coupled to a source of reactive gas (not shown) through supply lines 372 provided in support flanges 442, respectively.

Each of the reactive gas sources is available for deposition of a gas (a helium gas (eg, SiCl ₄ , SiHCl ₃ , SiH ₂ Cl ₂ , SiH ₃ Cl, Si ₂ H ₆ or SiH ₄ ) and a carrier gas (eg, N ₂ and/or H ₂ )) or a gas used for etching. Selective epitaxial processes involve deposition reactions and etching reactions. Although not shown in the current embodiment, when the epitaxial layer 76 is required to have a dopant, a dopant-containing gas (for example, AsH ₃ , PH _{3 ,} and/or B ₂ H ₆ ) may be supplied. Moreover, in the case of a cleaning or etching process, hydrogen chloride (HCl) can be supplied.

Referring to Figure 6, the exhaust nozzle unit 334 includes a plurality of exhaust pipes 334a and a plurality of exhaust nozzles 334b. The exhaust nozzles 334b are connected to the exhaust pipe 334a, respectively. A venting opening 334c may be defined in the front end of each of the exhaust nozzles 334b to pump non-reactive gases and reaction byproducts. The vent hole 334c has a slot-shaped cross section. As illustrated in FIG. 6, the exhaust nozzles 334b may be disposed such that the exhaust holes 334c have different heights from each other.

The exhaust pipe 334a and the exhaust nozzle 334b are disposed inside the external reaction tube 312a. Exhaust pipe 334a extends vertically and exhaust nozzle 334b is disposed substantially perpendicular to exhaust pipe 334a. The vent hole 334c may be disposed inside the internal reaction tube 314. Therefore, the reaction from the internal reaction tube 314 can be efficiently passed through the vent hole 334c. The zone draws non-reactive gas and reaction by-products. The internal reaction tube 314 has a plurality of through holes 376. The exhaust holes 334c of the exhaust nozzle 334b may be disposed inside the internal reaction tube 314 through the through holes 376, respectively.

Figure 8 is a cross-sectional view illustrating the arrangement of the exhaust nozzle of Figure 1 and the arrangement of the thermocouple. Referring to Fig. 8, the exhaust nozzle 334b has a plurality of exhaust holes 334c each having a slot-shaped cross section. The exhaust holes 334c of the exhaust nozzle 334b are disposed on the inner wall of the inner reaction tube 314 in the circumferential direction and have different heights from each other. When the substrate holder 328 is switched into the process position, each of the supply nozzles 332b injects a reaction gas onto the substrate S placed on the substrate holder 328. Here, it is possible to generate a non-reactive gas and reaction by-products in the internal reaction tube 314. The exhaust nozzle 334b can suck the non-reactive gas and reaction by-products to discharge the sucked non-reactive gas and reaction by-products to the outside. Here, the height of the exhaust holes 334c may substantially correspond to the height of the substrate S, respectively. As illustrated in FIG. 4, the exhaust nozzle 334b can be coupled to the first exhaust line 342 by an exhaust manifold 344 disposed on the lower chamber 312b. Therefore, the non-reactive gas and the reaction by-products can be discharged through the first exhaust line 342. The on-off valve 346 can be disposed on the first exhaust line 342 to open or close the first exhaust line 342. A turbo pump 348 may be disposed on the first exhaust line 342 to forcibly discharge non-reactive gas and reaction by-products through the first exhaust line 342. The first exhaust line 342 is connected to the second exhaust line 352. The non-reactive gas and reaction by-products flowing along the first exhaust line 342 may be exhausted through the second exhaust line 352.

The auxiliary exhaust port 328a is disposed on the lower chamber 312b, and the auxiliary exhaust line 328b is coupled to the auxiliary exhaust port 328a. Auxiliary exhaust line 328b is connected to the Two exhaust lines 352. First and second auxiliary valves 328c and 328d are disposed on the auxiliary exhaust line 328b to open or close the auxiliary exhaust line 328b. The auxiliary exhaust line 328b is connected to the first exhaust line 342 through a connection line 343, and the connection valve 343a is disposed on the connection line 343 to open or close the connection line 343.

Referring to Figures 7 and 8, thermocouples 382 and 384 are disposed between external reaction tube 312a and internal reaction tube 314. Thermocouples 382 and 384 are placed vertically to measure temperature based on height. Therefore, the staff can grasp the temperature in the process space according to the height to check the effect that has an influence on the process according to the temperature distribution.

Figure 9 is a view of a supply line connected to the supply nozzle of Figure 1, respectively. Referring to Figure 9, supply nozzles 332b can be separately coupled to a source of reactive gas (not shown) via separate supply lines 372. Therefore, the reaction gas can be uniformly supplied into the reaction zone of the internal reaction tube 314 through the plurality of supply nozzles 332b. If one supply line 372 is connected to the plurality of supply nozzles 332b, different amounts of reactive gases may be supplied according to the supply nozzles 332b. Therefore, the process rate can vary depending on the location on the substrate holder 328.

Figure 10 is a view illustrating the flow of a reaction gas into the internal reaction tube of Figure 1. As described above, the supply holes 332c of the supply nozzle 332b are disposed on the inner wall of the inner reaction tube 314 in the circumferential direction and have different heights from each other. Moreover, the exhaust holes 334c of the exhaust nozzle 334b are disposed on the inner wall of the inner reaction tube 314 in the circumferential direction and have different heights from each other. Here, the centers of the supply holes 332c and the exhaust holes 334c are symmetrical to each other at the same height. That is, the supply hole 332c of the supply nozzle 332b and the exhaust hole 334c of the exhaust nozzle 334b may be stacked on the substrate The centers of the substrates S on the holder 328 are disposed opposite to each other. Therefore, the reaction gas injected from the supply nozzle 332b can flow toward the exhaust nozzle 334b disposed opposite to the supply nozzle 332b (in the direction of the arrow). Therefore, a sufficient time for the reaction gas and the surface of the substrate S to react with each other can be ensured. Here, the non-reactive gas and reaction by-products generated during the process can be sucked and discharged through the exhaust nozzle 334b.

Moreover, as illustrated in FIG. 10, the flow of the reaction gas may vary depending on the height of the substrate S stacked on the substrate holder 328. Therefore, the reaction gas flow can have a phase difference depending on the height of the substrate S. That is, since the supply hole 332c of the supply nozzle 332b and the exhaust hole 334c of the exhaust nozzle 334b have a phase difference in position according to the height of the substrate S, the reaction gas may have a phase difference according to the height. Referring to Fig. 10, an arrow 1 indicates a flow of a reaction gas flowing from the supply nozzle 332b toward the exhaust nozzle 334b disposed at the uppermost position, and an arrow 2 indicates a flow from the supply nozzle 332b toward the exhaust nozzle 334b disposed at the lowermost position. Reaction gas flow. There may be a phase difference between the arrows 1 and 2 having a predetermined angle. Therefore, the reaction gas injected from the supply hole can be diffused by the reaction gas injected from the supply holes defined at different heights. That is to say, interference can occur between the reactant gas streams having a phase difference. Therefore, the reaction gas can move toward the exhaust nozzle 334b in a state in which the reaction gas is diffused by the disturbance.

Moreover, the supply hole 332c of the supply nozzle 332b has a circular shape, and the exhaust hole 334c of the exhaust nozzle 334b has a slot shape. Therefore, the reaction gas injected from the supply hole 332c of the supply nozzle 332b can be diffused with a predetermined width along the outline of the vent hole 334c. Therefore, the contact surface between the reaction gas and the surface of the substrate S The product can be increased. Moreover, a sufficient reaction of the reaction gas can be induced to limit the generation of the non-reactive gas. The reaction gas may generate a laminar flow from the supply hole 332c to the exhaust hole 334c on the substrate S.

As illustrated in Figure 4, the substrate holder 328 is coupled to the rotating shaft 318, and the rotating shaft 318 passes through the lower chamber 312b and is then coupled to the lift motor 319a and the rotary motor 319b. The rotary motor 319b is disposed on the motor housing 319c. The rotary motor 319b drives the rotary shaft 318 to perform the epitaxial process to rotate the substrate holder 328 (and the substrate S) together with the rotary shaft 318. This is done because the reaction gas flows from the supply hole 332c to the exhaust hole 334c to advance the deposition on the substrate S from the supply hole 332c toward the exhaust hole 334c, thereby gradually reducing the concentration of the reaction gas. Therefore, in order to prevent the above phenomenon from occurring, the substrate S can be rotated, so that uniform deposition is performed on the surface of the substrate S.

The motor housing 319c is fixed to the bracket 319d. The bracket 319c is coupled to the upper portion of the lower guide 319e connected to the lower portion of the lower chamber 312b, and is lifted and lowered along the lift rod 419. The bracket 319c is helically coupled to the lower rod 419, and the lower rod 419 is rotated by the lift motor 319a. That is, when the elevation motor 319a rotates, the lower lever 419 rotates. Therefore, the bracket 319c and the motor housing 319c can be lifted and lowered together with each other. Therefore, the rotating shaft 318 and the substrate holder 328 can be lifted and lowered together. The substrate holder 328 can be switched between the stacking position and the process position by the lift motor 319a. The bellows 318a connects the lower chamber 312b to the motor housing 319c to maintain the airtight state of the interior of the lower chamber 312b. Figure 11 is a view of a state in which the substrate holder of Figure 1 is switched into a process position.

Referring to FIG. 11, a thermal resistance spacer 316 is disposed below a lower portion of the substrate holder 328. Moreover, the substrate holder 328 can be raised and lowered together as the rotating shaft 318 moves up and down. The thermal resistance barrier 316 can close the open lower portion of the inner reaction tube 314 to prevent heat within the inner reaction tube 314 from being transferred into the stacking space within the lower chamber 312b.

Fig. 12 is a schematic perspective view illustrating a modified example of the supply nozzle of Fig. 6. Figure 13 is a perspective view of the supply nozzle of Figure 12, and Figure 14 is a cross-sectional view of the supply nozzle of Figure 12.

Referring to Figs. 12 to 14, the supply nozzle 332b has an internal space which gradually increases in cross section in the discharge direction of the reaction gas. The reaction gas supplied through the supply pipe 332a is diffused along the internal space of the supply nozzle 332b. The supply nozzle 332b has a supply hole 332c defined in its front end. The supply hole 332c has a slot-shaped cross section. The cross section of the supply hole 332c substantially corresponds to the cross section of the vent hole 334c.

Figure 15 is a view illustrating the flow of a reaction gas through the supply nozzle and the exhaust nozzle of Figure 12 . Referring to Fig. 15, the reaction gas injected from the supply nozzle 332b flows toward the exhaust nozzle 334b disposed opposite to the supply nozzle 332b. Here, since the reaction gas is discharged through the supply hole 332c in a state where it is diffused along the internal space of the supply nozzle 332b and then sucked through the exhaust hole 334c of the exhaust nozzle 334b, the reaction gas may be generated from The laminar flow of the supply hole 332c to the exhaust hole 334c has a predetermined width (substantially corresponding to the cross section of the supply hole 332c and the cross section of the exhaust hole 334c).

Although not described above, the exhaust nozzle 334b of FIGS. 6 and 12 may have the same structure as the supply nozzle 332b of FIGS. 12 to 14. That is, exhaust The nozzle 334b has an internal space that gradually decreases in cross section in the suction direction of the reaction gas. The non-reactive gas and reaction by-products sucked through the exhaust holes 332c may be concentrated along the inner space of the exhaust nozzle 334b to move to the exhaust pipe 332a.

16 is a schematic perspective view illustrating a modified example of the supply nozzle of FIG. 13, and FIG. 17 is a cross-sectional view of the supply nozzle of FIG. Referring to Figures 16 and 17, the supply nozzle 332b includes an injection plate 332d. The injection plate 332d can be placed on the supply hole 332c. The injection plate 332d has a plurality of injection holes 332e. The reaction gas diffused along the internal space of the supply nozzle 332b can be injected through the injection hole 332e.

Figure 18 is a front elevational view showing the arrangement of the cover, the insulating frame and the heater of Figure 11, and Figure 19 is a side view showing the arrangement of the heater tube, the terminal portion and the wires of Figure 11, and Figure 20 is a view along the line of Figure 19. A cross-sectional view taken of line A-A', and (a) of FIG. 21 is a plan view of the heater of FIG. 20, and (b) of FIG. 21 is a cross-sectional view of the heater of FIG. The insulating frame 325, the heater 326, and the cover 324 will be described with reference to FIGS. 18 to 21 (a) and (b).

The insulating frame 325 secures the heater 326 to its preset position and prevents the heaters 326 from rubbing against each other. Moreover, the insulating frame 325 is disposed to surround the outer reaction tube 312a and has a circular insertion groove 325a recessed from the inner circumferential surface thereof in the radial direction. The plurality of insertion grooves 325a are vertically spaced apart from each other in the process space. A heater tube 326a, which will be described later, is inserted into each of the insertion grooves 325a. The insulating frame 325 may be formed of a heat insulating material (for example, a ceramic material) having a low thermal conductivity. Since the heat insulating material is disposed between the heaters 326 to prevent heat from being transferred between the heaters 326, it can be more effectively adjusted according to the height in the process space. Heating temperature.

The plurality of heaters 326 are disposed to surround the outer reaction tube 312a at different heights from each other. Moreover, a plurality of heaters 326 heat the process space such that the process space within the outer reaction tube 312a reaches a temperature at which the epitaxial process can be performed. The heater 326 can heat different temperatures from each other. Therefore, the heating temperature may vary depending on the height in the process space. The heating temperature can be gradually increased toward the lower side of the process space to produce smooth convection in the process space, thereby performing the epitaxial process quickly.

The heater 326 includes a heater tube 326a, a heating wire 326b, a pair of terminal portions 326c, and a wire 326d.

The heater tube 326a has an internal space in which a halogen gas (fluorine gas, chlorine gas, bromine gas, iodine gas or helium gas) is filled. Moreover, the heater 326 has an annular shape ("C"-shaped annular shape) having a circumference in which a part is open. The heater tube 326a is inserted into the insertion groove 325a of the insulating frame 325.

The heating wire 326b is inserted into the inner space of the heater tube 326a to emit light by receiving an electric current. The heating wire 326b is electrically connected such that a wire 326d connected to a power source (not shown) applies a current through the terminal portion 326c. The heating wire 326b may be formed of a tungsten material having high strength and high thermal resistance.

Terminal portion 326c is coupled to each of the two ends of heater tube 326a to seal the open interior space of heater tube 326a. The terminal portion 326c is electrically connected to the heating wire 326a to supply current into the heating wire 326a. The wire 326d is electrically connected to the terminal portion 326b to supply a current into the terminal portion 326b. That is, the current supplied from the power source (not shown) to the wire 326d flows through the terminal portion 326c. Move into the heating wire 326b. Here, the heating wire 326b can emit light to heat the process space in the outer reaction tube 312a.

A power source (not shown) is electrically connected to the wire 326d to supply current into the wire 326d. Although one power source (not shown) is connected to the plurality of heaters 326, a plurality of power sources (not shown) may be respectively connected to the plurality of heaters 326 to supply currents having different intensities from each other into the heater 326. This means that the heater 326 described above can be varied in heating temperature.

The cover 324 can block the introduction of dust from the outside or minimize heat loss. Therefore, the cover 324 can be disposed to surround the insulating frame 325. A plurality of through holes may be defined in the cover 324 such that the terminal portion 326c or the wire 326d of the heater 326 is exposed to the outside. The through holes 324a may be vertically arranged in a zigzag shape in the process space. Therefore, heat loss to the outside can be minimized.

According to an exemplary embodiment, the temperature change rate in the process space may be from about 80 ° C / min to about 200 ° C / min when the process space is heated by using a heater. When compared to a typical heater having a rate of temperature change of from about 10 ° C/min to about 20 ° C/min, it will be seen that the heater according to an exemplary embodiment has a temperature change rate eight times greater than that of a typical heater. The rate of temperature change.

According to the exemplary embodiment, the heating temperature in the process space may vary depending on the height. Specifically, the process space can change rapidly over temperature. In addition, the substrate processing throughput can be increased.

Although the invention has been described in detail with reference to exemplary embodiments, the invention may be embodied in many different forms. Therefore, the technical concept of the scope of the attached patent application and The scope is not limited to the preferred embodiment.

312a‧‧‧External reaction tube

312b‧‧‧lower chamber

314‧‧‧Internal reaction tube

316‧‧‧ Thermal resistance baffle

318‧‧‧Rotary axis

318a‧‧‧ bellows

319‧‧‧ channel

319a‧‧‧ Lift motor

319b‧‧‧Rotary motor

319e‧‧‧lower guide

324‧‧‧ Cover

325‧‧‧Insulation frame

326‧‧‧heater

327‧‧‧Support frame

328‧‧‧Sheet holder

328a‧‧‧Assisted exhaust 埠

328b‧‧‧Auxiliary exhaust line

328c‧‧‧First auxiliary valve

328d‧‧‧Second auxiliary valve

332‧‧‧First exhaust line

334‧‧‧Exhaust nozzle

337‧‧‧Upper lifting rod

338‧‧‧ Lifting motor

342‧‧‧First exhaust line

343‧‧‧Connecting line

343a‧‧‧Connecting valve

348‧‧‧ turbo pump

352‧‧‧Second exhaust line

362‧‧‧Auxiliary gas supply埠

419‧‧‧ Lifting rod

442‧‧‧Support flange

S‧‧‧Substrate

Claims (7)

An apparatus for processing a substrate in which a process is performed on a substrate, wherein the apparatus includes: a lower chamber having an open upper portion and a passage in one side thereof through which the passage is Adjacent to the substrate; an outer reaction tube disposed to close the open upper portion of the lower chamber to provide a process space in which the process is performed; a substrate holder, at least a substrate vertically stacked therein The substrate holder is switched between a stacking position in which the substrate is stacked in the substrate holder, and a process position in which the process is performed on the substrate; An internal reaction tube disposed in the external reaction tube, the internal reaction tube being disposed around the substrate holder disposed at the process position to divide a reaction zone relative to the substrate; a gas supply unit, It is disposed in the external reaction tube to supply a reaction gas into the reaction zone; and a plurality of heaters disposed to surround the different heights from each other Outside the reaction tube, and then heating the process volume. The apparatus of claim 1, wherein the heaters have different heating temperatures from each other. The apparatus of claim 1, wherein each of the heaters comprises: an annular heater tube having an internal space filled with a halogen gas, wherein the heater a portion of the circumference of the tube is open; a heating wire disposed in the interior space of the heater tube for emission Light; a pair of terminal portions coupled to each of the two open ends of the heater tube to seal the interior space, the pair of terminal portions being electrically connected to the heating wire; and a power source, the electricity Connected to the terminal portion to supply current into the heating wire. The apparatus of claim 3, wherein the currents supplied from the power source to the plurality of heaters have different intensities from each other. The apparatus of claim 4, further comprising an insulating frame disposed to surround the outer reaction tube, the insulating frame having a plurality of insertion grooves recessed from an inner circumferential surface thereof, Wherein the heater tubes are inserted into each of the insertion grooves. The apparatus of claim 5, wherein the insulating frame is formed of a heat insulating material. The apparatus of claim 5, further comprising a cover having a plurality of through holes in one surface thereof, the terminal portions being exposed through the through holes, the cover being disposed Surrounding the insulating frame, wherein the through holes are vertically disposed in the process space in a zigzag shape.