KR100396423B1 - 기판 온도 측정장치 및 방법 - Google Patents

기판 온도 측정장치 및 방법 Download PDF

Info

Publication number
KR100396423B1
KR100396423B1 KR20007010328A KR20007010328A KR100396423B1 KR 100396423 B1 KR100396423 B1 KR 100396423B1 KR 20007010328 A KR20007010328 A KR 20007010328A KR 20007010328 A KR20007010328 A KR 20007010328A KR 100396423 B1 KR100396423 B1 KR 100396423B1
Authority
KR
South Korea
Prior art keywords
probe
temperature
substrate
emissivity
probes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR20007010328A
Other languages
English (en)
Korean (ko)
Other versions
KR20010042000A (ko
Inventor
브루스 더블유. 페유스
개리 이. 미너
마크 얌
아론 헌터
피터 크노트
자슨 머선
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20010042000A publication Critical patent/KR20010042000A/ko
Application granted granted Critical
Publication of KR100396423B1 publication Critical patent/KR100396423B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/06Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G01J5/064Ambient temperature sensor; Housing temperature sensor; Constructional details thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0815Light concentrators, collectors or condensers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0818Waveguides
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0818Waveguides
    • G01J5/0821Optical fibres
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0846Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0887Integrating cavities mimicking black bodies, wherein the heat propagation between the black body and the measuring element does not occur within a solid; Use of bodies placed inside the fluid stream for measurement of the temperature of gases; Use of the reemission from a surface, e.g. reflective surface; Emissivity enhancement by multiple reflections
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/52Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
    • G01J5/53Reference sources, e.g. standard lamps; Black bodies
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/80Calibration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)
KR20007010328A 1998-03-18 1999-02-23 기판 온도 측정장치 및 방법 Expired - Fee Related KR100396423B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9/044,217 1998-03-18
US09/044,217 US6179466B1 (en) 1994-12-19 1998-03-18 Method and apparatus for measuring substrate temperatures
US09/044,217 1998-03-18
PCT/US1999/003978 WO1999047901A1 (en) 1998-03-18 1999-02-23 Method and apparatus for measuring substrate temperatures

Publications (2)

Publication Number Publication Date
KR20010042000A KR20010042000A (ko) 2001-05-25
KR100396423B1 true KR100396423B1 (ko) 2003-09-02

Family

ID=21931132

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20007010328A Expired - Fee Related KR100396423B1 (ko) 1998-03-18 1999-02-23 기판 온도 측정장치 및 방법

Country Status (7)

Country Link
US (1) US6179466B1 (enExample)
EP (1) EP1064527B1 (enExample)
JP (1) JP4511724B2 (enExample)
KR (1) KR100396423B1 (enExample)
DE (1) DE69916256T2 (enExample)
TW (1) TW455676B (enExample)
WO (1) WO1999047901A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009154388A3 (ko) * 2008-06-17 2010-03-11 에이피시스템 주식회사 포토마스크 베이킹 장치

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6374150B2 (en) * 1998-07-30 2002-04-16 Applied Materials, Inc. Method and apparatus for monitoring and/or end point detecting a process
JP2000266603A (ja) * 1999-03-19 2000-09-29 Tokyo Electron Ltd 放射温度測定方法及び放射温度測定装置
US6349270B1 (en) * 1999-05-27 2002-02-19 Emcore Corporation Method and apparatus for measuring the temperature of objects on a fast moving holder
US6403931B1 (en) * 1999-10-07 2002-06-11 Ventana Medical Systems, Inc. Slide heater calibrator and temperature converter apparatus and method
US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
DE10119047B4 (de) * 2000-04-21 2010-12-09 Tokyo Electron Ltd. Thermische Bearbeitungsvorrichtung und thermisches Bearbeitungsverfahren
US6398406B1 (en) * 2000-06-01 2002-06-04 Sandia Corporation Temperature determination using pyrometry
US6816803B1 (en) * 2000-06-02 2004-11-09 Exactus, Inc. Method of optical pyrometry that is independent of emissivity and radiation transmission losses
US6647350B1 (en) 2000-06-02 2003-11-11 Exactus, Inc. Radiometric temperature measurement system
US6375350B1 (en) * 2000-08-08 2002-04-23 Quantum Logic Corp Range pyrometer
JP4698807B2 (ja) * 2000-09-26 2011-06-08 東京エレクトロン株式会社 半導体基板熱処理装置
US6448558B1 (en) * 2001-01-31 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Active infrared signature detection device
JP2006170616A (ja) * 2001-03-06 2006-06-29 Tokyo Electron Ltd 温度計測方法及び装置、半導体熱処理装置
US7080940B2 (en) * 2001-04-20 2006-07-25 Luxtron Corporation In situ optical surface temperature measuring techniques and devices
US6572265B1 (en) * 2001-04-20 2003-06-03 Luxtron Corporation In situ optical surface temperature measuring techniques and devices
JPWO2003038384A1 (ja) * 2001-10-30 2005-02-24 松下電器産業株式会社 温度測定方法、熱処理方法および半導体装置の製造方法
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
US6768084B2 (en) 2002-09-30 2004-07-27 Axcelis Technologies, Inc. Advanced rapid thermal processing (RTP) using a linearly-moving heating assembly with an axisymmetric and radially-tunable thermal radiation profile
US20040114666A1 (en) * 2002-12-17 2004-06-17 Hardwicke Canan Uslu Temperature sensing structure, method of making the structure, gas turbine engine and method of controlling temperature
US6976782B1 (en) 2003-11-24 2005-12-20 Lam Research Corporation Methods and apparatus for in situ substrate temperature monitoring
US8658945B2 (en) * 2004-02-27 2014-02-25 Applied Materials, Inc. Backside rapid thermal processing of patterned wafers
AU2005264615A1 (en) * 2004-07-23 2006-01-26 Icf Inc. Silicon wafer substrate locking stage and silicon wafer substrate temperature measuring method
US7112763B2 (en) * 2004-10-26 2006-09-26 Applied Materials, Inc. Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers
US7767927B2 (en) 2005-05-16 2010-08-03 Ultratech, Inc. Methods and apparatus for remote temperature measurement of a specular surface
CN101288035B (zh) * 2005-09-14 2013-06-19 马特森技术有限公司 可重复热处理的方法和设备
US7691204B2 (en) * 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
US8372203B2 (en) * 2005-09-30 2013-02-12 Applied Materials, Inc. Apparatus temperature control and pattern compensation
US20070215049A1 (en) * 2006-03-14 2007-09-20 Applied Materials, Inc. Transfer of wafers with edge grip
WO2008131513A1 (en) * 2007-05-01 2008-11-06 Mattson Technology Canada, Inc. Irradiance pulse heat-treating methods and apparatus
US8047706B2 (en) * 2007-12-07 2011-11-01 Asm America, Inc. Calibration of temperature control system for semiconductor processing chamber
US8283607B2 (en) * 2008-04-09 2012-10-09 Applied Materials, Inc. Apparatus including heating source reflective filter for pyrometry
US8548311B2 (en) 2008-04-09 2013-10-01 Applied Materials, Inc. Apparatus and method for improved control of heating and cooling of substrates
US8367983B2 (en) * 2008-04-09 2013-02-05 Applied Materials, Inc. Apparatus including heating source reflective filter for pyrometry
US7985945B2 (en) * 2008-05-09 2011-07-26 Applied Materials, Inc. Method for reducing stray light in a rapid thermal processing chamber by polarization
US20090298300A1 (en) * 2008-05-09 2009-12-03 Applied Materials, Inc. Apparatus and Methods for Hyperbaric Rapid Thermal Processing
US8452166B2 (en) * 2008-07-01 2013-05-28 Applied Materials, Inc. Apparatus and method for measuring radiation energy during thermal processing
US8254767B2 (en) 2008-08-29 2012-08-28 Applied Materials, Inc. Method and apparatus for extended temperature pyrometry
US8147137B2 (en) * 2008-11-19 2012-04-03 Applied Materials, Inc. Pyrometry for substrate processing
US20100193154A1 (en) * 2009-01-28 2010-08-05 Applied Materials, Inc. Rapid cooling of a substrate by motion
WO2012048419A1 (en) 2010-10-15 2012-04-19 Mattson Technology Canada, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
JP5578028B2 (ja) 2010-10-29 2014-08-27 セイコーエプソン株式会社 温度測定装置および温度測定方法
JP5578029B2 (ja) * 2010-10-29 2014-08-27 セイコーエプソン株式会社 温度測定装置および温度測定方法
DE102012005428B4 (de) * 2012-03-16 2014-10-16 Centrotherm Photovoltaics Ag Vorrichtung zum Bestimmen der Temperatur eines Substrats
US10359318B2 (en) * 2012-12-20 2019-07-23 Raytheon Company Radio frequency stimulated blackbody with vacuum and cryogenic capability
CN105333962B (zh) * 2014-06-18 2018-06-22 中微半导体设备(上海)有限公司 一种修正双波段测温误差的温度测量方法及系统
CN106794605B (zh) * 2014-10-03 2019-08-27 惠普发展公司有限责任合伙企业 控制表面的加热
CN108028213B (zh) 2015-12-30 2021-12-21 玛特森技术公司 用于毫秒退火系统的预热方法
US10184183B2 (en) * 2016-06-21 2019-01-22 Applied Materials, Inc. Substrate temperature monitoring
US11594445B2 (en) 2018-03-13 2023-02-28 Applied Materials, Inc. Support ring with plasma spray coating
US10760976B2 (en) * 2018-04-12 2020-09-01 Mattson Technology, Inc. Thermal imaging of heat sources in thermal processing systems
KR102619972B1 (ko) * 2018-06-26 2024-01-03 어플라이드 머티어리얼스, 인코포레이티드 온도를 측정하기 위한 방법 및 장치
CN111779766A (zh) * 2020-06-30 2020-10-16 上海华虹宏力半导体制造有限公司 Rtp机台滚珠上顶环润滑方法
KR20220108374A (ko) * 2021-01-27 2022-08-03 주성엔지니어링(주) 기판처리장치용 가스공급장치
US20220341793A1 (en) * 2021-04-23 2022-10-27 Photon Control Inc. Flexible Temperature Probe
KR102372483B1 (ko) 2021-11-10 2022-03-08 전병규 에어 충진이 가능한 휴대용 안전모
KR20250095663A (ko) 2022-10-25 2025-06-26 어플라이드 머티어리얼스, 인코포레이티드 램프들의 방사선 출력을 모니터링하기 위한 방법들, 시스템들, 및 장치
US20250003806A1 (en) * 2023-06-27 2025-01-02 Applied Materials, Inc. Chamber kits, systems, and methods for calibrating temperature sensors for semiconductor manufacturing

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234230B2 (enExample) * 1971-12-27 1977-09-02
JPS5940250B2 (ja) * 1977-12-20 1984-09-28 新日本製鐵株式会社 温度と放射率の同時測定方法
BE880666A (fr) * 1979-12-17 1980-04-16 Centre Rech Metallurgique Dispositif et procede pour mesurer l'emissivite d'un produit
US4611930A (en) * 1983-12-16 1986-09-16 Exxon Research And Engineering Co. Pyrometer measurements in the presence of intense ambient radiation
US4659234A (en) * 1984-06-18 1987-04-21 Aluminum Company Of America Emissivity error correcting method for radiation thermometer
US4708474A (en) * 1985-11-14 1987-11-24 United Technologies Corporation Reflection corrected radiosity optical pyrometer
US4881823A (en) * 1988-03-29 1989-11-21 Purdue Research Foundation Radiation thermometry
US5188458A (en) * 1988-04-27 1993-02-23 A G Processing Technologies, Inc. Pyrometer apparatus and method
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
KR960013995B1 (ko) * 1988-07-15 1996-10-11 도오교오 에레구토론 가부시끼가이샤 반도체 웨이퍼 기판의 표면온도 측정 방법 및 열처리 장치
US4956538A (en) * 1988-09-09 1990-09-11 Texas Instruments, Incorporated Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors
US5029117A (en) * 1989-04-24 1991-07-02 Tektronix, Inc. Method and apparatus for active pyrometry
US5011295A (en) * 1989-10-17 1991-04-30 Houston Advanced Research Center Method and apparatus to simultaneously measure emissivities and thermodynamic temperatures of remote objects
US5156461A (en) 1991-05-17 1992-10-20 Texas Instruments Incorporated Multi-point pyrometry with real-time surface emissivity compensation
JPH0526732A (ja) * 1991-07-18 1993-02-02 Kobe Steel Ltd 光学的炉内温度測定方法
US5226732A (en) * 1992-04-17 1993-07-13 International Business Machines Corporation Emissivity independent temperature measurement systems
EP0612862A1 (en) 1993-02-24 1994-08-31 Applied Materials, Inc. Measuring wafer temperatures
US5660472A (en) 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US5755511A (en) 1994-12-19 1998-05-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009154388A3 (ko) * 2008-06-17 2010-03-11 에이피시스템 주식회사 포토마스크 베이킹 장치

Also Published As

Publication number Publication date
DE69916256D1 (de) 2004-05-13
EP1064527B1 (en) 2004-04-07
KR20010042000A (ko) 2001-05-25
US6179466B1 (en) 2001-01-30
TW455676B (en) 2001-09-21
JP4511724B2 (ja) 2010-07-28
EP1064527A1 (en) 2001-01-03
WO1999047901A1 (en) 1999-09-23
DE69916256T2 (de) 2005-04-14
JP2002506988A (ja) 2002-03-05

Similar Documents

Publication Publication Date Title
KR100396423B1 (ko) 기판 온도 측정장치 및 방법
KR100330139B1 (ko) 기판온도 측정을 위한 방법 및 장치
KR100342796B1 (ko) 기판온도 측정방법 및 장치
US7957926B2 (en) System and process for calibrating pyrometers in thermal processing chambers
US6200634B1 (en) Thermal processing system with supplemental resistive heater and shielded optical pyrometry
US6839507B2 (en) Black reflector plate
KR101047088B1 (ko) 장치 온도 제어 및 패턴 보상 장치 및 방법
US5874711A (en) Apparatus and method for determining the temperature of a radiating surface
US7041931B2 (en) Stepped reflector plate

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20120727

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20130729

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20140730

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20150630

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160821

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160821