KR100390448B1 - Inductor omitted - Google Patents

Abstract

PURPOSE: A method for manufacturing an inductor is provided to improve the selectivity of magnetic field formation by manufacturing the inductor within a silicon substrate. CONSTITUTION: A trench is formed by eliminating portions of a silicon substrate(1). A first insulating film, a first metal layer(5), and a second insulating film are formed in turn and the unnecessary portions of the second insulating film, first metal layer, first insulating film are eliminated selectively except for a contact hole region. A contact hole is formed by eliminating selectively a second oxidizing film(6) of the contact hole region. A second metal layer is formed on a front including the contact hole and the unnecessary metal layer is selectively eliminated. A third insulating film is deposited on the front including the second metal layer.

Description

Inductor manufacturing method {omitted}

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to inductors, and more particularly, to an inductor manufacturing method suitable for forming induction electromotive force and induction current by manufacturing an inductor in a silicon substrate.

In general, an inductor can generate a magnetic field and is used to obtain an induced current.

The present invention is to manufacture an inductor in a silicon substrate, and to adjust the amount of induction current according to the number of coils (square) coil.

The inductor manufacturing method of the present invention for this purpose will be described with reference to the accompanying drawings.

1 (a) is a front view of a coil having a rectangular behavior according to the inductor manufacturing method of the present invention, Figure 1 (b) is a perspective view of a coil having a square shape according to the inductor manufacturing method of the present invention.

2 (a) to (d) are process cross-sectional views showing the inductor manufacturing method of the present invention.

First, in the method of manufacturing an inductor of the present invention, as shown in FIG. 2 (a), the first photosensitive film 2 is coated on the silicon substrate 1 to manufacture the inductor through photolithography and etching processes. The silicon substrate 1 in the region is selectively removed to form the trench 3.

Next, as shown in FIG. 2B, the first photosensitive film 2 is removed, and the first oxide film 4 and the first metal layer 5 are formed on the entire surface of the silicon substrate 1 on which the trench 3 is formed. Form in turn.

At this time, the first metal layer 5 is formed using a sputtering method.

Subsequently, a second oxide film 6 is deposited on the first metal layer 5, and a second photosensitive film 7 is coated on the second oxide film 6 to perform the photolithography and etching process. 5) The unnecessary second oxide film 6, the first metal layer 5, and the first oxide film 4 are selectively removed except the region to be contacted with light.

After the third oxide film 8 is deposited and buried in a region where the first oxide film 4, the first metal layer 5, and the second oxide film 6 are selectively removed, the second oxide film 6 is buried. A third photosensitive film (not shown) is applied to the entire surface of the third oxide film 8 that is included.

Subsequently, the contact hole is connected to the first metal layer 5 by selectively removing the second oxide layer 6 in the region to be contacted with the first metal layer 5 through photolithography and etching. Form.

Subsequently, as shown in FIG. 2 (c), a second metal layer 9 is formed on the entire surface including the contact hole, and a fourth photosensitive film 10 is coated on the second metal layer 9, thereby performing photolithography and etching. The second metal layer 9 is selectively removed to form a rectangular metal coil through the process.

Subsequently, as shown in FIG. 2D, the fourth photosensitive film 10 is removed, the fourth oxide film 11 is deposited on the entire surface including the second metal layer 9, and the fourth oxide film 11 is removed. The fourth oxide film 11 is selectively removed to form a first via hole by applying a fifth photoresist film (not shown) on the substrate to be connected to the second metal layer 9 through photolithography and etching processes. .

Subsequently, a third metal layer 12 is formed on the entire surface including the first via hole, and patterned for a rectangular metal coil, and then a fifth oxide layer 13 is deposited on the entire surface including the third metal layer 12. .

After applying the above-described process sequence, that is, oxide film deposition, metal deposition, a photoresist film for forming via holes, and repeatedly removing the oxide film using the photosensitive film as a mask to form a via hole, a desired square The number of types of metal coils can be adjusted and manufactured.

Here, the upper and lower via hole portions of the metal layers may not be sequentially stacked on the same portion.

3 is a cross-sectional view of a structure according to an inductor manufacturing method of the present invention. When a current flows through nodes 3 and 4, as shown in FIG. This causes induced current to flow between node 1 and node 2 as shown in FIG.

At this time, the induced current is adjusted in size according to the number of times of the coil of the rectangular shape.

As described above, the inductor manufacturing method of the present invention can form a magnetic field in a required portion by manufacturing an inductor in a silicon substrate, and has an effect of obtaining a desired induction current by controlling the number of coils having a square shape.

1 (a) is a front view of a metal coil according to the inductor manufacturing method of the present invention

(b) is a perspective view of a metal coil according to an inductor manufacturing method of the present invention

2 (a) to 2 (d) are process cross-sectional views showing the inductor manufacturing method of the present invention.

3 is a cross-sectional view of the inductor according to the present invention.

* Description of the symbols for the main parts of the drawings *

1: silicon substrate 2: first photosensitive film

3: trench 4: first oxide film

5: first metal layer 6: second oxide film

7: second photosensitive film 8: third oxide film

9: 2nd metal layer 10: 4th photosensitive film

11: fourth oxide film 12: third metal layer

13: 5th oxide film

Claims (2)

A first process of removing a portion of the silicon substrate to form a trench, A second process of forming a first insulating film, a first metal layer, and a second insulating film on the entire surface of the substrate in order, and then selectively removing unnecessary second insulating film, first metal layer, and first insulating film except for a region to be contacted; A third process of forming a contact hole by selectively removing the second oxide film of the region to be contacted, A fourth process of selectively removing an unnecessary second metal layer after forming a second metal layer on the entire surface including the contact hole; And a fourth process of depositing a third insulating film on the entire surface including the second metal layer and repeatedly performing the second, third, and fourth processes a plurality of times. The method of claim 1, The upper and lower via hole portions of the metal layers are not stacked on the same portion continuously.