KR100386892B1 - Multi stack semiconductor device with radiation function - Google Patents

Abstract

PURPOSE: A multi stack semiconductor device is provided to improve memory capacity by inserting a package to a slot and to improve radiation by forming a radiation fin in a housing. CONSTITUTION: A housing(11) can stack a package(1) which comprises many stories of metal thin plates(5) with insulative adhesive. Slots are formed in the housing for inserting the packages. A radiation fin(6) is formed at outside of the metal thin plate and the pitch of the metal thin plate is equal to the pitch of an outer lead(2).

Description

Multi-Stack Semiconductor Device with Heat Dissipation

The present invention relates to a multi-stack semiconductor device having a heat dissipation function, and more particularly, by stacking a package in multiple stages inside a housing by a metal thin plate, the memory capacity can be expanded as desired, and on one side of the housing. The present invention relates to a multi-stack semiconductor device having a heat dissipation fin structure to improve heat dissipation.

A semiconductor generally includes a dicing process for cutting a wafer into single chips, a die attach process for bonding the separated chips onto a lead frame using an adhesive material, and an inner lead of the pad and the lead frame of the chip. Wire bonding process using conductive metal wire, Molding process to cover and shape around the chip in order to protect the lead frame completed wire bonding from various damage factors, Lead plating on the external lead and the semiconductor substrate It is manufactured through a lead molding process for molding into a designated lead shape that can be mounted.

In modern times, the demand for a large-capacity semiconductor device is increasing. To realize a large capacity, there is no choice but to interconnect the packages, and to realize this in a narrow space, the packages are loaded in a stacked form and used in a multi-package state.

Representative multi-packaging method is a method of manufacturing a mirror package by loading the two packages of the lead down-set (down-set) in the reverse phase through the lead via the upper and lower substrates. This multipackaging method can increase the memory capacity, but it requires two kinds of leadframes, and the process of manufacturing a multichip semiconductor device is not only complicated, but also the equipment for mounting the package on the upper and lower sides of the package must be provided in reverse. do. It also has the disadvantage of occupying a lot of space (height) and heavy weight. After all, there is a problem that it is difficult to use as a commercialization because it is not suitable for the current trend that requires a small, lightweight product.

In order to solve the above problems in expanding the memory capacity of a semiconductor device, a multichip semiconductor package has been proposed in which a multichip is mounted in one package to increase memory capacity. This method can be miniaturized / thinned by stacking multiple chips in one package, and it can be effectively used for large systems and small systems requiring fast processing speed by increasing information transfer processing speed between die and die or die and system. That has the advantage. However, the heat dissipation is not easy in such a multi-chip module package, and there is a problem in heat dissipation when mounting the multi-chip.

Another way to expand the memory capacity of a semiconductor device is to stack multiple SIMM types or packages. However, the SIMM type has a disadvantage of occupying a large amount of space (height), and the method of stacking a plurality of packages does not consider the heat dissipation problem of the chip, which limits the memory capacity of the semiconductor device.

SUMMARY OF THE INVENTION An object of the present invention is to overcome the above-mentioned problems in the prior art, and to provide a semiconductor device capable of solving the heat dissipation problem by improving the heat dissipation effect and expanding the memory capacity without restriction.

That is, the present invention has a housing that can be laminated in multiple stages, which is formed by joining the metal thin plate in multiple stages by an insulating adhesive, and in the housing there is a slot into which the package can be inserted so that the package outer lead is a slot. It is inserted into and bonded to the package mounting portion, the outer side of the metal thin plate is formed of a heat radiation fin structure, the metal thin plate is composed of multiple layers so that the pitch of the metal thin plate and the outer lead pitch of the package is the same, and a separate auxiliary plate The present invention provides a multi-stacked semiconductor device having a heat dissipation function, wherein housings mounted on both sides of a metal thin plate are mounted on a substrate.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The present invention is characterized by improving the heat dissipation effect by forming a separate housing 11 to solve the heat dissipation problem to accommodate the entire package but one side of the housing 11 to the heat dissipation fin (6) structure.

FIG. 1A is a schematic perspective view of the multi-stack semiconductor device of the present invention, and FIG. 1B is a side view of the housing 11 of the multi-stack semiconductor device of the present invention. As shown in FIG. 1, the housing 11 of the present invention insulates the metal thin plate 5 by the number of outer leads 2 of the desired package 1 so that the package 1 can be inserted to a desired capacity. It is comprised by adhesive bonding in multiple stages. In the present invention, the material of the metal thin plate 5 is not particularly limited, but aluminum is most preferred. In addition, although the adhesive used for bonding between the metal thin plates 5 is a thing with heat conductivity, the polyimide which can endure high temperature is preferable. In the present invention, the metal thin plate 5 constituting the housing 11 includes the outer lead pitch A described in FIG. 3 (a) and the thickness of the adhesive layer described in FIG. 3 (b). The thin plates 5 should be configured so that the pitch B is the same (ie A = B). One side of the housing 11 is formed with a slot 8 for mounting the package 1 and a structure on the heat dissipation fin 6 capable of dissipating heat is formed outside.

A process of manufacturing a multi-stack semiconductor device having a heat dissipation function according to the present invention is as follows. In the case of manufacturing the semiconductor device according to the present invention, the housing 11 should be manufactured first. The housing 11 has the same number of metal thin plates 5 as the number of outer leads 2 of the package 1, and the pitch B of the metal thin plates 5 and the pitch A of the outer leads are the same. It is manufactured by bonding using a thermally conductive insulating adhesive. When fabricating a semiconductor device using the completed housing 11, first, a solder dip or solder cream is applied to the package outer lead mounting portion 7 of the housing 11 to perform soldering. . Subsequently, after the package 1 is inserted into the slot 8, it is checked whether the outer lead 2 is correctly seated on the metal thin plate 5. In order to arrange the package 1 inside the housing 11, a separate auxiliary plate must be attached to the left and right sides so that the length of the housing 11 can be maintained by the length of the package 1. When the outer lead 2 is correctly seated on the metal thin plate 5, the outer lead 2 of the package is attached to the metal thin plate 5 by passing through an IR furnace. Subsequently, the portion 3 to be bonded to the substrate of the completed housing 11 is bonded to the substrate to manufacture a semiconductor device. At this time, the method of adhering the housing 11 to the substrate may use a general method of adhering to the printed circuit board or a method using solder balls, which is in contact with the lower end of the housing 11, that is, in contact with the printed circuit board (PCB). Bonding is completed by applying solder cream to the part or by melting and attaching a solder ball, mounting it on a printed circuit board, and passing it through a heating part.

The multi-stack semiconductor device having a heat dissipation function of the present invention can expand the memory capacity by inserting a package into a slot as much as a desired memory capacity, and a heat dissipation fin structure capable of dissipating heat to a housing is provided, thereby improving heat dissipation. Have

1A is a schematic perspective view of a multi-stack semiconductor device of the present invention,

(b) is a side view of a housing of a multi-stack semiconductor device of the present invention,

2 is a perspective view of a metal thin plate of the multi-stack semiconductor device of the present invention,

Figure 3 (a) is an explanatory diagram defining the external lead pitch in the present invention,

(b) is explanatory drawing which defined the metal thin plate in this invention.

Explanation of symbols on the main parts of the drawings

1: Package 2: External Lead

3: part bonded to the substrate 4: adhesive

5: thin metal plate 6: heat dissipation fin

7: package mounting portion 8: slot

11: housing

A: External lead pitch

B: metal thin plate pitch

Claims (3)

The package is formed by joining the metal thin plate in multiple stages by an insulating adhesive, and has a housing for stacking the package in multiple stages. The housing has a slot into which the package can be inserted. It is bonded to the mounting portion, the outer side of the metal thin plate is formed of a heat dissipation fin structure, the metal thin plate is composed of multiple layers so that the pitch of the metal thin plate and the outer lead pitch of the package is the same, the separate auxiliary plate left and right A multi-stacked semiconductor device having a heat dissipation function, wherein housings mounted on both sides are mounted on a substrate. The method of claim 1, Multi-stacked semiconductor device having a heat dissipation function, characterized in that the housing is composed of an aluminum plate. The method of claim 1, And said insulating adhesive is polyimide.