KR100379677B1 - Method for loading target in sputtering vacuum chamber - Google Patents

Method for loading target in sputtering vacuum chamber Download PDF

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Publication number
KR100379677B1
KR100379677B1 KR1019960059465A KR19960059465A KR100379677B1 KR 100379677 B1 KR100379677 B1 KR 100379677B1 KR 1019960059465 A KR1019960059465 A KR 1019960059465A KR 19960059465 A KR19960059465 A KR 19960059465A KR 100379677 B1 KR100379677 B1 KR 100379677B1
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target
vacuum chamber
fastener
cooling plate
plate
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KR1019960059465A
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Korean (ko)
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KR19980040298A (en
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송기봉
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주식회사 코오롱
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: A method for loading a target in a sputtering vacuum chamber is provided to be capable of simplifying target replacing work and reducing the replacement time of the target by using a target fastener and a controlling plate. CONSTITUTION: A target(4) is loaded on a fixed cooling plate(5) of a vacuum chamber, wherein the fixed cooling plate includes a nut having the same shape as the target. A controlling plate(7) and a target fastener(3) are sequentially inserted along the lateral portion of the target. At this time, a cavity is formed at the center portion of the controlling plate, wherein the cavity has the same shape as the target. Then, the target is stably fixed on the cooling plate by fixing the target fastener, the controlling plate, and the cooling plate with each other using a bolt(8) attached at the target fastener.

Description

스파터용 진공챔버내 타겟의 장착방법Mounting method of target in vacuum chamber for spatter

본 발명은 진공챔버내에 장착된 타겟 (4) 의 플라스마를 스파터시킴으로서 반도체 회로판 등에 고순도의 박막을 제조함에 있어서, 본딩재료를 사용하지 않고 타겟 (4) 을 진공챔버의 고정냉각판 (5) 에 효율적으로 장착시키는 방법에 관한 것이다.According to the present invention, in producing a high purity thin film by sputtering a plasma of a target 4 mounted in a vacuum chamber, the target 4 is mounted on the fixed cooling plate 5 of the vacuum chamber without using a bonding material. It relates to a method for mounting efficiently.

더욱 구체적으로는, 볼트 및 너트를 갖는 타겟조임쇠 (3) 와 너트를 갖는 조절판 (7) 을 사용하여 볼트로 타겟 (4) 을 진공챔버의 고정냉각판 (5) 에 장착시키는 방법에 관한 것이다.More specifically, it relates to a method of mounting the target 4 to the fixed cooling plate 5 of the vacuum chamber with a bolt using a target fastener 3 having a bolt and a nut and a control plate 7 having a nut.

스파터용 진공챔버 (1) 내에서 반도체 회로판 등에 박막을 형성시키는 방법에 대해 설명하기로 한다.A method of forming a thin film in a semiconductor circuit board or the like in the vacuum chamber 1 for the spatter will be described.

먼저, 플라스마가 스파터 될 수 있는 금속, 반도체 또는 세라믹 등의 재질로 구성된 타겟 (4) 을 진공챔버내에 장착하고, 이들 타겟에 전력을 가하여 타겟내의 전자운동을 활성화시킨다. 그 결과 타겟의 표면에서 플라스마가 형성되고 이들 플라스마가 스파터되어 반도체 회로판 등에 박막을 형성한다. 이와 같은 공정에 있어서, 지금까지는 타겟 (4) 을 진공챔버내의 고정냉각판 (5) 에 본딩재료를 사용하여 장착시켰다.First, a target 4 made of a material such as a metal, semiconductor, or ceramic, into which a plasma can be sputtered, is mounted in a vacuum chamber, and electric power is applied to these targets to activate electron movement in the target. As a result, plasma is formed on the surface of the target and these plasmas are sputtered to form a thin film on a semiconductor circuit board or the like. In such a process, the target 4 was attached to the stationary cooling plate 5 in a vacuum chamber so far using a bonding material.

즉 타겟 (4) 의 뒷면에 본딩재료를 도포한 후, 진공챔버내의 고정냉각판 (5) 에 장착시켰다.That is, after apply | coating a bonding material to the back surface of the target 4, it mounted on the fixed cooling plate 5 in a vacuum chamber.

이와 같은 종래 방법은 타겟의 교환시 고정냉각판 (5) 에 부착된 본딩재료들을 제거해야하고, 타겟의 뒷면에 본딩재료를 도포해야 하는 번거러움이 발생하여 타겟의 교환작업에 많은 시간이 소요될 뿐만 아니라 본딩재료도 소비되어 경제적으로도 불리하였다.Such a conventional method requires the removal of the bonding materials attached to the fixed cooling plate 5 when the target is replaced, and the cumbersome work of applying the bonding material to the rear surface of the target. Bonding materials were also consumed and economically disadvantageous.

본 발명은 이와 같은 종래 기술의 문제점을 해결하기위해서 볼트와 너트를 갖는 타겟조임쇠 (3) 와 너트를 갖는 조절판 (7) 을 사용하여 타겟 (4) 을 진공챔버의 고정냉각판 (5) 에 볼트로 장착시키므로 타겟 교환작업을 단순화하고 교환시간을 단축할 수 있었다. 아울러 본딩재료를 사용할 필요가 없이 강제적으로도 유리하다.In order to solve this problem of the prior art, the target 4 is bolted to the fixed cooling plate 5 of the vacuum chamber by using a target fastener 3 having a bolt and a nut and a throttle 7 having a nut. By installing it, the target exchange operation can be simplified and the replacement time can be shortened. In addition, there is no need to use a bonding material, it is also advantageous forcibly.

본 발명은 진공챔버내에 장착된 타겟 (4) 의 플라스마를 스파터시킴으로서반도체 회로판 등의 표면에 박막을 제조함에 있어서, 볼트 및 너트를 갖는 타겟조임쇠 (3) 와 너트를 갖는 조절판 (7) 을 사용하여 타겟 (4) 을 진공챔버내에 장착시키는 방법에 관한 것이다.The present invention uses a target fastener 3 having a bolt and a nut and a throttle plate 7 having a nut in manufacturing a thin film on a surface of a semiconductor circuit board by spattering a plasma of a target 4 mounted in a vacuum chamber. To mount the target 4 into the vacuum chamber.

본 발명을 도면에 의해 보다 상세하게 설명한다.The present invention will be described in more detail with reference to the drawings.

제 1 도는 타겟이 장착된 스파터용 진공챔버의 모식도이고, 제 2 도 및 제 3 도는 제 1 도에서 보인 타겟 고정 부재들의 실시예를 나타내는 분해사시도이다.1 is a schematic view of a vacuum chamber for a spatter on which a target is mounted, and FIGS. 2 and 3 are exploded perspective views showing an embodiment of the target fixing members shown in FIG.

타겟 (4) 의 재질로서는 금속, 반도체 및 세라믹 등과 같이 전원공급시 플라스마를 형성하고, 형성된 플라스마가 스파터될 수 있는 재질을 사용한다.As the material of the target 4, a material such as a metal, a semiconductor, a ceramic, or the like that forms a plasma upon power supply and the formed plasma can be sputtered is used.

타겟 (4) 는 진공챔버내의 고정냉각판 (5) 상에 볼트 (8) 및 너트를 갖는 타겟조임쇠 (3) 와 너트를 갖는 조절판 (7) 에 의해 장착된다.The target 4 is mounted by a target fastener 3 having a bolt 8 and a nut and a throttle 7 having a nut on the stationary cooling plate 5 in the vacuum chamber.

타겟조임쇠 (3) 및 조절판 (7) 은 타겟의 형상에 따라 사각형, 원형 또는 타원형 등의 다양한 형태를 갖는다. 제 2 도 및 제 3 도에서와 같이 타겟조임쇠 (3) 및 조절판 (7) 의 가운데 부분은 타겟 (4) 이 통과할 수 있도록 중공부로 구성되어 있다. 조절판 (7) 은 타겟의 높이에 따라서 다양한 두께를 갖고 타겟조임쇠 (3) 는 타겟의 외주면 일부를 파지할 수 있도록 조절판 (7) 보다 중공부의 몸체부분의 폭이 넓다.The target fastener 3 and the throttle 7 have various shapes such as square, round or elliptical, depending on the shape of the target. As in FIGS. 2 and 3, the center portion of the target fastener 3 and the throttle 7 is composed of a hollow portion through which the target 4 can pass. The throttle 7 has various thicknesses according to the height of the target, and the target fastener 3 has a wider body portion than the throttle 7 so that the target fastener 3 can grip a part of the outer circumferential surface of the target.

고정냉각판 (5) 상에 타겟 (4) 을 장착시키는 방법을 구체적으로 설명한다.The method to mount the target 4 on the fixed cooling plate 5 is demonstrated concretely.

고정냉각판 (5) 상에 타겟 (4) 을 올려놓고, 여기에 타겟 (4) 의 높이에 적합한 두께를 갖고, 너트를 갖고 중앙부분이 중공부인 조절판 (7) 을 설치한다. 조절판 (7) 의 중앙부분이 중공부이므로 설치 후에는 조절판이 타겟 (4) 의 외면을감싸는 상태가 된다. 설치된 조절판 (7) 상단에 볼트 및 너트를 갖고 중앙부분이 중공부이고, 중공부외 몸체부분의 폭이 넓은 타겟조임쇠 (3) 을 설치하고 타겟조임쇠 (3) 에 부착된 볼트 (8) 를 조아 타겟 (4) 을 장착시킨다. 이때 타겟조임쇠 (3) 의 중공부의 몸체부분은 타겟 (4) 의 외주면을 파지한다. 볼트 (8) 는 타겟 조임쇠 (3) 의 너트, 조절판 (7) 의 너트 및 고정냉각판 (5) 의 너트를 순차적으로 통과하여 이들을 일체로 고정시킨다. 또한 타겟 조임쇠의 중공부의 몸체부분에 의해 타겟도 이들과 일체가 되므로 타겟 (4)은 고정냉각판 (5) 에 장착된다.The target 4 is placed on the stationary cooling plate 5, and a control plate 7 having a thickness suitable for the height of the target 4 and having a nut and a central portion thereof is provided. Since the center part of the adjustment plate 7 is a hollow part, after installation, the adjustment plate will be in the state which wraps around the outer surface of the target 4. A target fastener (3) having a bolt and a nut on the top of the installed adjustment plate (7) and a central part of the hollow part, and a wide body portion of the body part other than the hollow part is installed, and the target bolt is attached to the target fastener (3) by tightening the target. (4) Fit. At this time, the body portion of the hollow portion of the target fastener 3 grips the outer peripheral surface of the target 4. The bolt 8 sequentially passes through the nut of the target fastener 3, the nut of the adjusting plate 7 and the nut of the fixed cooling plate 5 to fix them integrally. In addition, since the target is also integrated with them by the body portion of the hollow portion of the target fastener, the target 4 is mounted to the fixed cooling plate 5.

타겟조임쇠 (3) 의 재질로서는 도전성 및 고융점을 갖는 재료를 사용하며 특히 서스 (SUS) 가 바람직하다.As the material of the target fastener 3, a material having conductivity and high melting point is used, and sus (SUS) is particularly preferable.

또한 고순도 박막을 제조하기위해서 타겟 (4) 중 오염된 부분을 차폐마스크 (2) 로 덮어 씌우는 것이 바람직하다. 즉 타겟에 전원을 공급하면 타겟내 전자활동이 활발하게 되어 플라스마가 형성되고, 형성된 플라스마는 스파터되어 반도체 회로판 등에 박막을 형성시킨다. 이때 차폐마스크 (2) 로 덮어 씌운 타겟 (4) 의 오염부분에서는 전자운동이 제한되어 플라스마가 형성 및 스파터되지 않는다. 그 결과 불순물이 없는 균일한 조성의 박막을 제조할 수 있다. 차폐마스크 (2) 의 재질로서는 도전성 재료를 사용하며 특히 서스 (SUS) 가 바람직하다.It is also preferable to cover the contaminated portion of the target 4 with the shielding mask 2 to produce a high purity thin film. That is, when power is supplied to the target, electronic activity in the target becomes active, and plasma is formed, and the formed plasma is sputtered to form a thin film on a semiconductor circuit board or the like. At this time, in the contaminated portion of the target 4 covered with the shielding mask 2, the electron motion is limited so that plasma is not formed and sputtered. As a result, a thin film of uniform composition free of impurities can be produced. As the material of the shielding mask 2, a conductive material is used, and sus (SUS) is particularly preferable.

이하 본 발명을 실시예 및 비교실시예를 통하여 설명한다.Hereinafter, the present invention will be described through Examples and Comparative Examples.

그러나 본 발명이 실시예 및 비교실시예에 한정되는 것은 아니다.However, the present invention is not limited to the examples and the comparative examples.

실시예 1Example 1

반도체 회로판이 내장된 진공챔버의 고정냉각판 (5) 에 직경이 10 mm 이고순도가 99.9% 인 원형의 구리타겟 (4) 을 올려놓고, 여기에 너트를 갖고 중앙부분이 중공부인 조절판 (7) 을 설치하여 조절판 (7) 이 타겟 (4) 의 외면을 감싸도록 한다.A circular copper target 4 having a diameter of 10 mm and a purity of 99.9% is placed on a fixed cooling plate 5 of a vacuum chamber in which a semiconductor circuit board is incorporated, and a throttle plate 7 having a nut and a hollow portion at the center thereof. So that the throttle plate 7 surrounds the outer surface of the target 4.

설치된 조절판 (7) 상단에 볼트 (8) 및 너트를 갖고 중앙부분이 중공부인 타겟조임쇠 (3) 를 설치하고 볼트 (8) 을 조아 구리타겟 (4) 을 고정냉각판 (5)상에 장착시킨다. 이때 타겟조임쇠 (3) 의 재질은 시스 (SUS) 이고 내경은 95 mm 이다. 타겟조임쇠 (3) 부분에 재질이 서스 (SUS) 이고 내경이 90 mm인 차폐마스크 (2) 를 설치한 후 진공챔버내에 500 W 의 전력을 투입하여 반도체 회로판상에 박막을 제조한다. 제조된 박막의 조성을 원자흡광분광계로 분석한 결과 구리성분이 100% 였다.Install a target fastener (3) having a bolt (8) and a nut on the top of the installed control plate (7) and a hollow portion at the center, and tighten the bolt (8) to mount the copper target (4) on the fixed cooling plate (5). . At this time, the material of the target fastener 3 is sheath (SUS) and the inner diameter is 95 mm. In the target fastener 3, a shielding mask 2 having a material (SUS) and an internal diameter of 90 mm is installed, and 500 W of electric power is supplied into the vacuum chamber to manufacture a thin film on a semiconductor circuit board. The composition of the prepared thin film was analyzed by atomic absorption spectrometer and found to be 100% copper.

이상과 같이 박막을 제조한 후 타겟조임쇠 (3) 에 부착된 볼트 (8) 를 풀어서 사용한 타겟 (4) 을 고정냉각판 (5) 으로부터 분리한다.After the thin film is produced as described above, the bolt 4 attached to the target fastener 3 is released to separate the used target 4 from the fixed cooling plate 5.

비교실시예 1Comparative Example 1

직경이 100 mm 이고 순도가 99.9% 인 원형의 구리타겟 (4) 뒷면에 본딩재료를 도포한 후 이를 반도체 회로판이 내장된 진공챔버의 고정냉각판 (5) 에 밀착하여 고정시킨 후 진공챔버내에 500 W 의 전력을 투입하여 반도체 회로판상에 박막을 제조한다. 제조된 박막의 조성을 원자흡광분광계로 분석한 결과 구리성분이 92% 이고 기타 불순물이 8% 였다.Bonding material was applied to the back of the circular copper target (100) having a diameter of 100 mm and purity of 99.9%, and then fixed to the fixed cooling plate (5) of the vacuum chamber in which the semiconductor circuit board was embedded. A thin film is manufactured on a semiconductor circuit board by applying power of W. The composition of the prepared thin film was analyzed by Atomic Absorption Spectrometer, and the copper component was 92% and other impurities were 8%.

이상과 같이 박막을 제조한 후 외압을 가하여 타겟을 고정냉각판 (5) 으로부터 분리하고, 잔여 본딩재료를 제거한다.After the thin film is manufactured as described above, the target is separated from the fixed cooling plate 5 by applying an external pressure, and the remaining bonding material is removed.

비교실시예 2Comparative Example 2

타겟조임쇠 (3) 및 차폐마스크 (2) 의 재질을 납으로 변경한 것을 제외하고는 실시예 1 과 동일하게 실시하여 반도체 회로판상에 박막을 제조한다. 제조된 박막의 조성을 원자흡광분광계로 분석한 결과 구리성분이 92% 이고 납 성분이 8% 였다.A thin film was manufactured on a semiconductor circuit board in the same manner as in Example 1 except that the materials of the target fastener 3 and the shielding mask 2 were changed to lead. The composition of the prepared thin film was analyzed by atomic absorption spectrometer. The copper content was 92% and the lead content was 8%.

실시예 1 은 볼트를 이용한 본 발명의 장착방법으로 진공챔버의 고정냉각판 (5) 에 타겟 (4) 을 장착시킨 결과 타겟의 교환작업이 용이하였고, 본딩재료를 사용하지 않아도 되었다. 또한 차폐마스크 (2) 를 설치하고, 타겟조임쇠 (3) 및 차폐마스크 (2) 의 재질로 서스 (SUS) 를 사용한 결과 고순도의 박막을 제조할 수 있었다.In Example 1, the target 4 was mounted on the fixed cooling plate 5 of the vacuum chamber by the mounting method of the present invention using bolts, and the replacement of the targets was easy, and no bonding material was required. Moreover, when the shielding mask 2 was installed and sus SUS was used as the material of the target fastener 3 and the shielding mask 2, the thin film of high purity was able to be manufactured.

한편, 비교실시예 1 에서는 종래와 같이 본딩재료를 사용하여 진공챔버의 고정냉각판 (5) 에 타겟 (4) 을 장착시킨 결과 타겟의 교환시 본딩재료를 제거해야하는 번거러움이 발생되고 타겟 교환시간도 길어졌다. 또한 차폐마스크를 설치하지 않아 제조된 박막의 순도도 저하되었다.On the other hand, in Comparative Example 1, as a result of mounting the target 4 to the fixed cooling plate 5 of the vacuum chamber using the bonding material as in the prior art, the trouble of removing the bonding material during the replacement of the target is generated and the target exchange time is also increased. Lengthened In addition, since the shielding mask is not provided, the purity of the manufactured thin film is also reduced.

한편, 비교실시예 2 에서는 볼트를 이용한 본 발명의 장착방법으로 진공챔버의 고정냉각판 (5) 에 타겟 (4) 을 장착시킨 결과 타겟의 교환작업은 용이하였으나, 타겟조임쇠 (3) 및 차폐마스크 (2) 재질로 납을 사용하여 제조된 박막의 순도는 저하되었다.On the other hand, in Comparative Example 2, as a result of mounting the target 4 to the fixed cooling plate 5 of the vacuum chamber by the mounting method of the present invention using bolts, the target fastening work 3 and the shielding mask were easy. (2) The purity of the thin film manufactured using lead as a material was lowered.

제 1 도는 타겟이 장착된 스파터용 진공챔버의 개략도이다.1 is a schematic diagram of a vacuum chamber for a spatter mounted with a target.

제 2 도 및 제 3 도는 제 1 도에서 보인 타겟고정 부재들의 실시예를 나타내는 분해사시도이다.2 and 3 are exploded perspective views showing an embodiment of the target fixing member shown in FIG.

제 1 도∼제 3 도에 있어서, 1 은 진공챔버의 벽, 2 는 차폐마스크, 3 은 타겟조임쇠, 4 는 타겟, 5 는 고정냉각판, 6 은 절연체, 7 은 조절판, 8 은 볼트이다.1 to 3, 1 is a wall of a vacuum chamber, 2 is a shielding mask, 3 is a target fastener, 4 is a target, 5 is a fixed cooling plate, 6 is an insulator, 7 is a control plate, and 8 is a bolt.

Claims (5)

진공챔버내에 장착된 타겟(4) 의 플라스마를 스파터 시킴으로서 특정대상물의 표면에 박막을 제조함에 있어서, 타겟(4)과 동일 형상으로 너트가 형성되어 있는 진공챔버의 고정 냉각판(5) 상에 타겟(4)을 올려놓고, 타겟(4)과 동일한 형상인 사각형, 원형 또는 타원형이며 중앙부가 타겟(4)과 동일한 형상으로 중공(中空)이며 몸체에 너트가 형성되어 있는 조절판(7)과 타겟 조임쇠(3)를 차례로 그 중공부가 타겟(4)을 통과하도록 끼워넣은 다음, 타겟 조임쇠(3)에 부착된 볼트(8)를 타겟 조임쇠의 너트, 조절판의 너트 및 고정 냉각판의 너트 내로 차례로 통과시켜 타겟(4)을 감싸고 있는 타겟 조임쇠(3) 및 조절판(7)을 고정 냉각판(5)과 일체로 고정시킴으로서 타겟 (4) 을 진공챔버의 고정냉각판 (5) 에 장착시킴을 특징으로 하는 스파터용 진공챔버내 타겟의 장착방법.In manufacturing a thin film on the surface of a specific object by spattering the plasma of the target 4 mounted in the vacuum chamber, on the fixed cooling plate 5 of the vacuum chamber in which the nut is formed in the same shape as the target 4. The target plate 4 is placed, and the control plate 7 and the target having the same shape as the target 4 are rectangular, round or oval, the center part is the same shape as the target 4, and is hollow and the nut is formed in the body. Insert the fastener 3 in turn so that the hollow part passes through the target 4, and then pass the bolt 8 attached to the target fastener 3 into the nut of the target fastener, the nut of the throttle plate and the nut of the fixed cooling plate in order. By mounting the target 4 to the fixed cooling plate 5 of the vacuum chamber by fixing the target fastener 3 and the adjusting plate 7 surrounding the target 4 integrally with the fixed cooling plate 5. The target in the vacuum chamber for the spatter Law. 1항에 있어서, 타겟 (4) 은 플라스마가 스파터 될 수 있는 재질로 구성됨을 특징으로 하는 스파터용 진공챔버내 타겟의 장착방법.A method according to claim 1, characterized in that the target (4) consists of a material from which the plasma can be sputtered. 1항에 있어서, 타겟 (4) 의 재질이 금속, 반도체 또는 세라믹인 것을 특징으로 하는 스파터용 진공챔버내 타겟의 장착방법.A method of mounting a target in a vacuum chamber for a spatter according to claim 1, characterized in that the material of the target (4) is metal, semiconductor or ceramic. 1항에 있어서, 타겟조임쇠 (3) 는 도전성 및 고융점을 갖는 재질로 구성됨을특징으로 하는 스파터용 진공챔버내 타겟의 장착방법.The method of mounting a target in a vacuum chamber according to claim 1, characterized in that the target fastener (3) is made of a material having conductivity and high melting point. 1항에 있어서, 타겟조임쇠 (3) 의 중공부외 몸체부분의 폭이 조절관 (7) 의 중공부의 몸체부분보다 넓은 것을 특징으로 하는 스파터용 진공챔버내 타겟의 장착방법.A method according to claim 1, characterized in that the width of the body portion outside the hollow portion of the target fastener (3) is wider than the body portion of the hollow portion of the control tube (7).
KR1019960059465A 1996-11-29 1996-11-29 Method for loading target in sputtering vacuum chamber KR100379677B1 (en)

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