KR100379564B1 - Liquid crystal display and method for fabricating the same - Google Patents
Liquid crystal display and method for fabricating the same Download PDFInfo
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- KR100379564B1 KR100379564B1 KR1019940019429A KR19940019429A KR100379564B1 KR 100379564 B1 KR100379564 B1 KR 100379564B1 KR 1019940019429 A KR1019940019429 A KR 1019940019429A KR 19940019429 A KR19940019429 A KR 19940019429A KR 100379564 B1 KR100379564 B1 KR 100379564B1
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 52
- 239000011159 matrix material Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 230000031700 light absorption Effects 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000011946 reduction process Methods 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001782 photodegradation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
Description
본 발명은 액정표시 소자에 관한 것으로, 특히 블랙 매트리스의 상,하면에 광흡수층을 형성하는 방법으로 액정표시 소자(Thin Film Transistor-Liquid Crystal Diplay : TFT-LCD)의 화면표시 특성을 향상시키는데 적당하도록한 액정표시 소자의 구조 및 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device. In particular, a method of forming a light absorption layer on upper and lower surfaces of a black mattress is suitable for improving screen display characteristics of a thin film transistor (TFT-LCD). It relates to a structure and a manufacturing method of a liquid crystal display device.
일반적으로 TFT-LCD는 TFT와 화소전극이 배열되어 있는 하판(Bottom Plate)과, 색상을 나타내기위한 칼라필터(Color Filter) 및 공통전극으로 구성된 상판 (Top Plate), 그리고 상기의 상판과 하판의 두 유리기판 사이에 채워져 있는 액정으로 구성되어 있으며, 두 유리기판의 양쪽면에 부착되어 가시광선(자연광)을 선편광시켜주는 각각의 편광판으로 이루어진 디스플레이 소자(Display Device)이다.In general, a TFT-LCD has a bottom plate in which TFTs and pixel electrodes are arranged, a top plate composed of a color filter and a common electrode for displaying colors, and a top plate and a bottom plate. It is composed of a liquid crystal filled between two glass substrates, and is attached to both sides of the two glass substrates (Display Device) consisting of each polarizing plate to linearly polarize visible light (natural light).
이하, 첨부된 도면을 참고하여 종래의 액정표지 소자의 구조 및 제조방법에 대하여 설명하면 다음과 같다.Hereinafter, a structure and a manufacturing method of a conventional liquid crystal display device will be described with reference to the accompanying drawings.
종래의 액정표시 소자의 구조단면도인 제 1 도에서와 같이, TFT-LCD의 하부면은 투명절연의 하판(l6)상에 Aℓ, Ta, Cr 등의 금속을 스퍼터링(supttering) 방법에 의해 증착한후 패터닝하여 복수개의 게이트라인(2)을 형성하고, 상기의 게이트라인(2)상에 절연층으로서 질화막 또는 산화막을 이용하여 게이트 절연막(3)을 형성하고, 상기의 게이트 절연막(3)상에 반도체층(4), 오믹콘택층(5)을 형성하고 이어, 상기의 게이트라인(2)과 수직교차되도록 복수개의 데이타라인(7)을 형성한다.As shown in FIG. 1, which is a structural cross-sectional view of a conventional liquid crystal display device, the bottom surface of the TFT-LCD is formed by sputtering a metal such as A, Ta, Cr, etc. on the lower plate l6 of transparent insulation. After patterning, a plurality of gate lines 2 are formed, a gate insulating film 3 is formed on the gate line 2 using a nitride film or an oxide film as an insulating layer, and on the gate insulating film 3 above. The semiconductor layer 4 and the ohmic contact layer 5 are formed, and then a plurality of data lines 7 are formed to vertically intersect the gate line 2.
그리고 상기의 게이트라인(2)과 데이타라인(7)이 수직교차하여 형성된 화소영역에 투명 화소전극(16)을 형성하고 전면에 보호용 절연막(8)을 증작하여 완성한다.The transparent pixel electrode 16 is formed in the pixel region formed by vertically crossing the gate line 2 and the data line 7, and the protective insulating film 8 is formed on the entire surface.
그리고, TFT-LCD의 상부면은 투명절연의 상판(la)상에 TFT의 광열화 및 색순도 저하 방지를 위한 블랙 매트릭스(Black Matrix)(9)층을 형성하고 R(Red), G(Green), B(Blue)의 칼라필터층(10)을 형성한다.In addition, the upper surface of the TFT-LCD forms a black matrix (9) layer on the top of the transparent insulation la to prevent photodegradation and color purity degradation of the TFT, and R (Red) and G (Green). , B (Blue) color filter layer 10 is formed.
그리고 전면에 칼라필터층(10)의 보호와 표면평활화를 위한 보호막(11)을 형성한후 전면에 ITO를 증착하여 공통전극(12)을 형성한다.After forming the protective film 11 for protecting the color filter layer 10 and smoothing the surface, the ITO is deposited on the entire surface to form the common electrode 12.
상기와 같이, TFT 어레이가 완성된 하판(1b)과 칼라필터층이 완성된 상판(1a)상에 액정을 일정방향으로 배향하기 위한 배향막(도면에 도시하지 않음)을 형성하고 상판,하판의 합착공정 및 액정주입을 실시하고 모듈공정을 거쳐 TFT-LCD 패널을 완성한다.As described above, an alignment film (not illustrated) is formed on the lower plate 1b on which the TFT array is completed and the upper plate 1a on which the color filter layer is completed, and the upper and lower plates are bonded together. And performing liquid crystal injection and completing the TFT-LCD panel through the module process.
그러나 상기와 같은 종래의 액정표시 소자에 있어서는 액정표시 소자에 광원을 제공하기 위한 백램프(backlamp)의 백라이트(backlight)가 액정표시 소자의 셀을 통과할때 셀내부로 유입된 빛이 블랙 매트릭스에 의해 반사되어 박막 트랜지스터(TFT)에 영힝을 주게되고, 주변광원이 블랙 매트릭스에 의해 셀표면에서 반사되어 액정표시 소자(TFT-LCD)의 화면표시 특성을 저하시키는 문제점이 있었다.However, in the conventional liquid crystal display device as described above, when the backlight of the backlamp for providing a light source to the liquid crystal display device passes through the cell of the liquid crystal display device, the light introduced into the cell is transmitted to the black matrix. By reflecting the light to give a thin film transistor (TFT), the ambient light source is reflected from the cell surface by the black matrix to reduce the screen display characteristics of the liquid crystal display (TFT-LCD).
본 발명은 상기와 같은 종래의 액정표시 소자의 문제점을 해결하기 위하여 안출한 것으로써, 블랙 매트릭스의 상,하면에 광흡수층을 형성하는 방법으로 화면표시 특성을 향상시킨 액정표시 소자의 구조 및 제조방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the problems of the conventional liquid crystal display device as described above, the structure and manufacturing method of the liquid crystal display device improved screen display characteristics by forming a light absorption layer on the upper and lower surfaces of the black matrix The purpose is to provide.
상기의 목적을 달성하기 위한 본 발명의 액정표시 소자는 상,하유리기판이 합착되어 상,하기판 사이에 액정이 주입된 액정표시 소자에 있어서, 하유리기판에 형성된 박막 트랜지스터에 대향되는 상유리기판상에 일정넓이로 형성되는 제 1 광흡수층과, 상기의 제 1 광흡수층상에 형성되는 블랙 매트릭스와, 상기의 블랙 매트릭스층상에 블랙 매트릭스층을 감싸는 형태로 형성되는 제 2 광흡수층을 포함하여 이루어지는 것을 특징으로 한다.The liquid crystal display device of the present invention for achieving the above object is a liquid crystal display device in which the upper and lower glass substrates are bonded to the liquid crystal is injected between the upper and lower substrates, the upper glass substrate is opposed to the thin film transistor formed on the lower glass substrate And a first light absorbing layer formed to have a predetermined width, a black matrix formed on the first light absorbing layer, and a second light absorbing layer formed to surround the black matrix layer on the black matrix layer. It is done.
또한 본 발명에 의한 액정표시소자 제조방법은 투명 절연기판상에 ITO를 증착하고 화소영역을 제외한 부분에만 남도록 식각하는 공정과, 상기의 ITO를 환원공정으로 흑화(黑化)하여 제 1 광흡수층을 형성하는 공정과, 상기의 제 1 광흡수층상에 블랙 매트릭스층을 형성하는 공정과, 전면에 ITO를 증착하고 상기의 제 1 광흡수층상에만 남도록 식각하여 환원공정으로 ITO를 흑화하여 제 2 광흡수층을 형성하는 공정을 포함하여 이루어짐을 특징으로 한다.In addition, in the method of manufacturing a liquid crystal display device according to the present invention, a process of depositing ITO on a transparent insulating substrate and etching it so as to remain only in a portion except the pixel region, and blackening the ITO by a reduction process to form a first light absorbing layer. Forming a black matrix layer on the first light absorbing layer; depositing ITO on the entire surface and etching the same to remain only on the first light absorbing layer; Characterized in that it comprises a step of forming a.
이하. 첨부된 도면을 참고하여 본 발명의 액정표시 소자의 구조 및 제조방법을 상세히 설명하면 다음과 같다.Below. Hereinafter, a structure and a manufacturing method of the liquid crystal display of the present invention will be described in detail with reference to the accompanying drawings.
제 2 도 (a) 내지 (g)는 본 발명의 액정표시 소자의 공정단면도이고, 제 3 도는 본 발명의 액정표시 소자의 구조단면도이다.2 (a) to 2 (g) are process cross-sectional views of the liquid crystal display device of the present invention, and FIG. 3 is a structural cross-sectional view of the liquid crystal display device of the present invention.
먼저, 제 2 도 (a)에서와 같이, 투명 절연기판(21)상에 ITO(Indium Tin Oxide)를 증착하고 화소영역을 제외한 부분(하유리기판의 박막 트랜지스터에 대향되는 부분)에만 남도록 식각하여 ITO층(22)을 형성하고, 제 2 도 (b)에서와 같이 상기의 ITO를 O2, CO, CO2플라즈마 공정 또는 수용액을 이용한 ITO 환원공정으로 ITO를 흑화(黑化)하여 제 1 광흡수층(23)을 형성한다.First, as shown in FIG. 2 (a), ITO (Indium Tin Oxide) is deposited on the transparent insulating substrate 21 and etched so as to remain only in a portion except the pixel region (a portion opposite to the thin film transistor of the lower glass substrate). A layer 22 is formed, and the first light absorbing layer is blackened by ITO in an O 2 , CO, CO 2 plasma process, or an ITO reduction process using an aqueous solution, as shown in FIG. 2 (b). (23) is formed.
이어, 제 2 도(c)에서와 같이, 제 1 광흡수층(23)상에 TFT의 광열화 및 색순도저하를 위한 블랙 매트릭스(Black Matrix)(24)를 형성하고 제 2 도 (d)에서와 같이, 전면에 ITO를 증착하고 상기의 블랙 매트릭스(24)가 형성된 제 1 광흡수층(23)상에만 남도록 식각한다.Subsequently, as shown in FIG. 2 (c), a black matrix 24 is formed on the first light absorbing layer 23 to reduce photodegradation and color purity of the TFTs. Similarly, ITO is deposited on the entire surface and etched so as to remain only on the first light absorption layer 23 on which the black matrix 24 is formed.
그리고 제 2 도 (e)에서와 같이, 상기의 블랙 매트릭스(24)를 감싸는 형태로 형성된 ITO층(25)을 O2, DO, CO2플라즈마 공정 또는 수용액을 이용한 ITO 환원공정으로 상기의 ITO층(25)을 흑화하여 제 2 광흡수층(26)을 형성한다.And as shown in Figure 2 (e), the ITO layer 25 formed in the form surrounding the black matrix 24, the ITO layer by the O 2 , DO, CO 2 plasma process or ITO reduction process using an aqueous solution (25) is blackened and the 2nd light absorption layer 26 is formed.
이어, 제 2 도 (f)에서와 같이, 블랙 매트릭스(24)를 제외한 화소영역에 R(Red), G(Green), B(Blue)의 칼라필터층(27)을 형성한다.Subsequently, as shown in FIG. 2 (f), color filter layers 27 of R (Red), G (Green), and B (Blue) are formed in the pixel region except for the black matrix 24.
그리고 제 2 도(g)에서와 같이, 전면에 색보호층(28), 공통전극(29)을 차례대로 형성한다.As shown in FIG. 2 (g), the color protective layer 28 and the common electrode 29 are sequentially formed on the entire surface.
이어, 본 발명의 액정표시 소자의 구조단면도인 제 3 도에서와 같이, TFT 어레이와 화소전극이 형성된 투명절연의 하판과, 제 1 광흡수층(23), 블랙 매트릭스(24), 제 2 광흡수층(26)과 칼라필터층(27)이 형성된 투명 절연의 상판(21)상에 액정을 일정 방향으로 배향하기 위한 배향막(도면에 도시하지 않음)을 형성하고, 상판과 하판의 합착공정 및 액정주입을 실시하고 모듈공정을 거쳐 TFT- LCD 패널을 완성한다.Subsequently, as shown in FIG. 3, which is a structural cross-sectional view of the liquid crystal display device of the present invention, the lower plate of transparent insulation on which the TFT array and the pixel electrode are formed, the first light absorption layer 23, the black matrix 24, and the second light absorption layer (26) and an alignment film (not shown) for orienting the liquid crystal in a predetermined direction on a transparent insulating upper plate 21 having the color filter layer 27 formed thereon, and the bonding process of the upper plate and the lower plate and liquid crystal injection. After completing the module process, the TFT-LCD panel is completed.
상기와 같은 본 발명의 액정표시 소자의 구조 및 제조방법으로 형성된 본 발명의 액정표시 소자는 TFT-LCD 패널로 입사되는 주변광원을 블랙 매트릭스가 반사하여 화면 표시 성능을 저하시켰던 종래의 액정표시 소자와는 달리 흑화된 ITO로 형성된 제 1흡수층에 의해 페널외부의 주변광원이 반사되지 않고, 흡수되어 화면표시 특성을 향상시킨다.The liquid crystal display device of the present invention formed by the structure and manufacturing method of the liquid crystal display device of the present invention as described above and the conventional liquid crystal display device that the black matrix reflects the ambient light source incident on the TFT-LCD panel to reduce the screen display performance; In contrast, the ambient light source outside the panel is not reflected by the first absorption layer formed of blackened ITO and is absorbed to improve the display characteristics.
또한, 흑화된 ITO로 형성된 제 2 흡수층에 의해 백라이트에 의한 셀내부 반사문제를 해결하여 TFT 어레이의 특성이 저하되는 것을 막는다.In addition, the second absorbing layer formed of blackened ITO solves the problem of internal reflection of the cell by the backlight, thereby preventing the TFT array from deteriorating.
그리고 제 1 흡수층, 블랙 매트릭스, 제 2 흡수층의 다층구조로 형성되어 광차단 효과도 향상된다.In addition, since the first absorbing layer, the black matrix, and the second absorbing layer are formed in a multilayer structure, the light blocking effect is also improved.
제 1 도는 종래의 액정표시 소자의 구조단면도1 is a structural cross-sectional view of a conventional liquid crystal display device
제 2 도 (a) 내지 (g)는 본 발명의 액정표시 소자의 공정단면도2 (a) to (g) are process cross-sectional views of the liquid crystal display of the present invention
제 3 도는 본 발명의 액정표시 소자의 구조단면도3 is a structural cross-sectional view of the liquid crystal display device of the present invention.
*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
21 : 투명 절연기판 22, 25 : ITO층21: transparent insulating substrate 22, 25: ITO layer
23 : 제 1 광흡수층 24 : 블랙 매트릭스23: first light absorption layer 24: black matrix
26 : 제 2 광흡수층 27 : 칼라필터층26 second light absorption layer 27 color filter layer
28 : 색보호층 29 : 공통전극28: color protective layer 29: common electrode
Claims (5)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019940019429A KR100379564B1 (en) | 1994-08-06 | 1994-08-06 | Liquid crystal display and method for fabricating the same |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900001613A (en) * | 1988-07-27 | 1990-02-27 | 에스.르 바그레즈 | Automotive glass plates |
| KR920008982A (en) * | 1990-10-31 | 1992-05-28 | 이헌조 | Fabrication method and structure of thin film EL display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900001613A (en) * | 1988-07-27 | 1990-02-27 | 에스.르 바그레즈 | Automotive glass plates |
| KR920008982A (en) * | 1990-10-31 | 1992-05-28 | 이헌조 | Fabrication method and structure of thin film EL display device |
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