KR100363272B1 - Thinner composition for removing tft-lcd photoresist - Google Patents
Thinner composition for removing tft-lcd photoresist Download PDFInfo
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- KR100363272B1 KR100363272B1 KR1020000040278A KR20000040278A KR100363272B1 KR 100363272 B1 KR100363272 B1 KR 100363272B1 KR 1020000040278 A KR1020000040278 A KR 1020000040278A KR 20000040278 A KR20000040278 A KR 20000040278A KR 100363272 B1 KR100363272 B1 KR 100363272B1
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- 239000000203 mixture Substances 0.000 title claims abstract description 35
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 31
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 13
- -1 alkyl amide Chemical class 0.000 claims abstract description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 3
- 239000001257 hydrogen Substances 0.000 claims abstract description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 16
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 14
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 claims description 5
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 3
- 150000004702 methyl esters Chemical class 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 23
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000010408 film Substances 0.000 abstract description 11
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- 230000002776 aggregation Effects 0.000 abstract description 5
- 238000004220 aggregation Methods 0.000 abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004528 spin coating Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 239000002904 solvent Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 5
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 5
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229940113088 dimethylacetamide Drugs 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropyl acetate Chemical compound CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- GQKDBQTXMIUPSY-UHFFFAOYSA-N 1-methoxypropan-2-ol;1-methoxypropan-2-yl acetate Chemical compound COCC(C)O.COCC(C)OC(C)=O GQKDBQTXMIUPSY-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- BHIWKHZACMWKOJ-UHFFFAOYSA-N isobutyric acid methyl ester Natural products COC(=O)C(C)C BHIWKHZACMWKOJ-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- AKWHOGIYEOZALP-UHFFFAOYSA-N methyl 2-methoxy-2-methylpropanoate Chemical compound COC(=O)C(C)(C)OC AKWHOGIYEOZALP-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
본 발명은 박막 트랜지스터 액정표시소자 제조공정에 사용되는 포토레지스트 제거용 씬너(thinner) 조성물에 관한 것으로서,The present invention relates to a thinner composition for removing a photoresist used in a thin film transistor liquid crystal display device manufacturing process,
a) 하기 일반식 1의 알킬 아마이드 1 내지 25 중량%; 및a) from 1 to 25% by weight of an alkyl amide of formula 1: And
b) 하기 일반식 2의 유기 용제 75 내지 99 중량%를 포함하는 씬너 조성물을 제공한다.b) from 75 to 99% by weight of an organic solvent of the general formula (2).
[일반식 1][Formula 1]
상기 일반식 1에서, R1, R2, 및 R3는 수소이거나 적어도 하나 이상의 알킬기이며, 상기 알킬기는 탄소수가 1 내지 2인 직쇄 알킬기이고,In Formula 1, R 1 , R 2 , and R 3 are each hydrogen or at least one alkyl group, and the alkyl group is a straight chain alkyl group having 1 to 2 carbon atoms,
[일반식 2][Formula 2]
상기 일반식 2에서, R4, R5, 및 R6는 탄소수가 1 내지 3인 직쇄 알킬기이다.In the general formula 2, R 4 , R 5 , and R 6 are straight chain alkyl groups having 1 to 3 carbon atoms.
본 발명의 씬너 조성물은 유리 기판 위에 ITO(indium-tin oxide)막을 형성하고, 상기 ITO막 위에 포토레지스트를 회전 도포한 다음에, 이를 제거하기 위해 사용될 경우, 종래에 기판의 가장자리 에지 부분에 형성되던 포토레지스트의 뭉침 현상을 완벽하게 제거함으로써, TFT-LCD 제조시 생산 수율을 향상시킬 수 있다.The thinner composition of the present invention can be used for forming an indium-tin oxide (ITO) film on a glass substrate, spin-coating the photoresist on the ITO film, By completely eliminating the aggregation of the photoresist, it is possible to improve the production yield in manufacturing TFT-LCD.
Description
[산업상 이용분야][Industrial Applications]
본 발명은 박막 트랜지스터 액정표시소자(이하 TFT-LCD라 함) 제조공정에 사용되는 포토레지스트(Photoresist, 이하 PR이라 함) 제거용 씬너(thinner) 조성물에 관한 것으로서, 더욱 상세하게는 포토리소그래피 공정에서 마스크로서 사용되는포토레지스트중 가장자리 에지 부분의 포토레지스트 제거용 씬너 조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thinner composition for removing a photoresist (hereinafter, referred to as PR) used in a process for manufacturing a thin film transistor liquid crystal display device (hereinafter referred to as a TFT-LCD) And a thinner composition for removing photoresist at an edge portion of a photoresist used as a mask.
[종래 기술]BACKGROUND ART [0002]
TFT-LCD 제조공정 중 TFT-어레이(array) 공정은 포토리소그래피 공정을 사용하는 실리콘(Silicon) 반도체 제조공정과 유사하다. 포토리소그래피 공정은 기판에 감광막을 도포하고, 포토마스크의 패턴을 전사 및 현상하고, 전사된 패턴에 따라 적절하게 깎아내는 식각 공정을 통하여 전자 회로를 구성하는 공정이다.The TFT-array process during the TFT-LCD manufacturing process is similar to the silicon semiconductor manufacturing process using the photolithography process. The photolithography process is a process of forming an electronic circuit by applying a photoresist film to a substrate, transferring and developing the pattern of the photomask, and etching the photoresist film appropriately according to the transferred pattern.
포토리소그래피 공정을 통해 궁극적으로 TFT-LCD를 제작하기 위해서 기판 상에 TFT-어레이를 형성시킨다. 이런 공정 중에 회로 배선 사이의 간격 때문에 불순물, 예를 들면 외부 입자(particle) 등이 도입되는 것을 막아야 한다. 기판 상에 존재하는 입자는 에칭이나 이온주입 등과 같은 후속공정에서 여러 가지 불량을 발생시킬 수 있으며, 이에 따라 전체 공정의 수율 저하를 초래하게 된다. 이러한 입자 유입의 주요 발생처가 감광액으로 도포된 기판 주변에 사용되지 않는 감광액이다.A TFT-array is formed on the substrate to ultimately manufacture the TFT-LCD through the photolithography process. It is necessary to prevent the introduction of impurities, such as external particles, due to the spacing between the circuit wires during this process. Particles existing on the substrate may cause various defects in subsequent processes such as etching and ion implantation, resulting in a reduction in yield of the whole process. A major source of such particle influx is a photoresist that is not used around the substrate coated with the photoresist.
이 물질은 베이크 공정을 거친 후 기판의 이송 도중 박리되어 장치 내의 입자의 원인이 되기도 하고 노광시 디포커스(defocus)의 원인이 된다. 이런 불필요한 감광물질이 장비 오염의 원인이 되어 TFT-LCD 제조공정의 수율을 저하시키므로 이를 제거하기 위하여 에지 부분에 유기 용제 성분으로 구성된 씬너 조성물을 분사하여 이를 제거하고 있다.This material is peeled off during transfer of the substrate after the baking process, which causes particles in the device and causes defocusing during exposure. This unnecessary photosensitive material causes contamination of the equipment, thereby lowering the yield of the TFT-LCD manufacturing process. Therefore, a thinner composition composed of an organic solvent component is sprayed on the edge portion to remove the thinner composition.
원심력이 작용하는 실리콘 웨이퍼의 에지 부위 린스(rinse)와 달리 TFT-LCD의 유리 기판이 사각이므로 회전 EBR(edge bead removing, 에지 부위의 PR 제거) 작업이 불가능하며, 유리 기판은 고정되어 있고 분사구가 유리 기판의 4면을 따라 직선운동을 하기 때문에 TFT-LCD에서는 용해속도가 저하되면 에지 부위에 생긴 감광막을 제거한 후에라도 감광막의 끝단 부분에 감광막이 다시 몰리는 현상이 발생된다. 이는 실리콘 웨이퍼에서 고속으로 회전시키면, 용해속도가 느린 씬너라도 PR 끝부분이 뭉치는 것이 훨씬 줄어드는 회전 EBR 작업과는 다르다. 즉, LCD 유리 기판은 고정되어 있고, 씬너 분사구만 움직이므로 직접 기판 자체가 회전운동을 하는 실리콘 웨이퍼와는 EBR 속도가 다르다. 용해속도 자체가 저하되면, 다시 한번 그 면을 따라 씬너를 분사해야 하므로 시간과 씬너 소모량이 크다.Unlike edge rinse of a silicon wafer on which a centrifugal force is applied, since the glass substrate of the TFT-LCD is rectangular, it is impossible to perform the edge bead removal (PR removal of the edge), the glass substrate is fixed, When the dissolution rate is lowered in the TFT-LCD, the photoresist film is remixed to the end portion of the photoresist film even after removing the photoresist film formed on the edge portion because of the linear movement along the four sides of the glass substrate. This is different from rotating EBR operations where spinning at high speeds on silicon wafers reduces the shear rate of the PR ends even with slower dissolution rates. That is, since the LCD glass substrate is fixed and only the thinner nozzle is moved, the EBR speed is different from that of the silicon wafer in which the substrate itself rotates. When the dissolution rate itself decreases, the thinner must be sprayed along the surface once again, resulting in a large amount of time and consuming the thinner.
종래의 씬너 조성물들을 살펴보면 다음과 같다.The conventional thinner compositions are as follows.
일본 공개 특허공보 소63-69563호에는 씬너를 기판의 주도부, 연도부, 배면부의 불필요한 감광막에 접촉시켜 제거하는 방법이 개시되어 있으며, 세정 제거용 유기 용제 예를 들면 셀로솔브, 셀로솔브 아세테이트, 프로필렌글리콜 에테르, 프로필렌글리콜 에테르 아세테이트 등의 에테르 및 에테르 아세테이트류, 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 사이클로헥사논 등의 케톤류, 메틸 락테이트, 에틸 락테이트, 메틸 아세테이트, 에틸 아세테이트, 부틸 아세테이트 등의 에스테르류를 씬너로 사용한다. 또한, 일본 공개 특허공보 평4-49938호에는 프로필렌글리콜 메틸에테르아세테이트의 씬너로서의 사용이 개시되어 있으며, 일본 공개 특허공보 평4-42523호에는 알킬알콕시 프로피오네이트의 씬너로서의 사용 방법 등이 개시되어 있다.Japanese Unexamined Patent Application, First Publication No. 63-69563 discloses a method for removing thinner by contacting an unnecessary photoresist film on the main portion, the flame portion, and the back portion of the substrate. Organic solvents for cleaning and removing are exemplified by cellosolve, cellosolve acetate, Ether and ether acetates such as propylene glycol ether and propylene glycol ether acetate, ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate And the like as a thinner. Japanese Patent Application Laid-Open No. 4-49938 discloses the use of propylene glycol methyl ether acetate as a thinner, and JP-A-4-42523 discloses a method of using alkylalkoxypropionate as a thinner and the like have.
즉, 이들 용제들을 위와 같이 단독으로 사용하거나, 물성 개선 및 안전성의 이유로 단일 용제들을 혼합하여 사용하기도 하였다. 이러한 용제류는 기판은 고정된 채 직선 EBR을 하는 TFT-LCD 제조공정과는 달리 초기 용해속도가 높지 않더라도 회전하면서 EBR작업을 실행하는 반도체 소자류 제작과정에서 회전속도를 높여 충분히 사용되어 왔다.That is, these solvents may be used alone as above, or single solvents may be mixed for reasons of property improvement and safety. Unlike a TFT-LCD manufacturing process in which a substrate is fixed and a straight line EBR is formed, the spinning speed has been sufficiently used in the process of manufacturing semiconductor devices that perform EBR operations while rotating even when the initial melting speed is not high.
기존에는 유리 기판 EBR시 이렇게 다시 뭉쳐진 PR은 기판의 가장자리 부분만 노광 및 현상을 한번 더 진행하거나, 씬너 분사를 한번 더 진행해야 한다는 문제점이 있었다.Conventionally, there is a problem that the PR, which is re-agglomerated at the time of the EBR of the glass substrate, needs to perform exposure and development only once at the edge portion of the substrate, or to perform thinner injection once more.
본 발명은 상기한 바와 같은 문제점을 해결하기 위하여 안출된 것으로서, 본 발명은 반도체 집적회로 공정에 주로 사용되어온 상기 종래 씬너 조성물의 단점을 보완하여 TFT-LCD의 대형 기판에서도 효율적으로 사용 가능한 씬너 조성물을 제공하는 것을 그 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a thinner composition which can be efficiently used even on a large substrate of a TFT-LCD by complementing the disadvantages of the conventional thinner composition, The purpose is to provide.
도 1은 실시예 1에 의해 제조된 포토레지스트 끝부분의 프로파일(profile) 상태를 나타내는 광학 현미경 사진이다.BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an optical microscope photograph showing the profile state of a photoresist edge portion produced by Example 1. FIG.
도 2는 비교예 2에 의해 제조된 포토레지스트 끝부분의 프로파일 상태를 나타내는 광학 현미경 사진이다.FIG. 2 is an optical microscope photograph showing the profile state of the photoresist end portion produced by Comparative Example 2. FIG.
도 3는 비교예 4에 의해 제조된 포토레지스트 끝부분의 프로파일 상태를 나타내는 광학 현미경 사진이다.3 is an optical microscope photograph showing the profile state of the photoresist end portion manufactured by Comparative Example 4;
도 4는 비교예 5에 의해 제조된 포토레지스트 끝부분의 프로파일 상태를 나타내는 광학 현미경 사진이다.4 is an optical microscope photograph showing the profile state of the photoresist end portion manufactured by Comparative Example 5. Fig.
[과제를 해결하기 위한 수단][MEANS FOR SOLVING THE PROBLEMS]
본 발명은 상기 목적을 달성하기 위하여,In order to achieve the above object,
박막 트랜지스터 액정표시소자용 포토레지스트를 제거하기 위한 씬너 조성물에 있어서,A thinner composition for removing a photoresist for a thin film transistor liquid crystal display element,
a) 하기 일반식 1의 알킬 아마이드 1 내지 25중량%; 및a) from 1 to 25% by weight of an alkyl amide of formula 1: And
b) 하기 일반식 2의 유기 용제 75 내지 99 중량%를 포함하는 씬너 조성물을제공한다.b) from 75 to 99% by weight of an organic solvent of the general formula (2).
[일반식 1][Formula 1]
상기 일반식 1에서, R1, R2, 및 R3는 수소이거나 적어도 하나 이상의 알킬기이며, 상기 알킬기는 탄소수가 1 내지 2인 직쇄 알킬기이고,In Formula 1, R 1 , R 2 , and R 3 are each hydrogen or at least one alkyl group, and the alkyl group is a straight chain alkyl group having 1 to 2 carbon atoms,
[일반식 2][Formula 2]
상기 일반식 2에서, R4, R5, 및 R6는 탄소수가 1 내지 3인 직쇄 알킬기이다.In the general formula 2, R 4 , R 5 , and R 6 are straight chain alkyl groups having 1 to 3 carbon atoms.
상기 씬너 조성물에 있어서, a)의 알킬 아마이드는 N-메틸 아세트 아마이드, 디메틸 포름 아마이드, 및 디메틸 아세트 아마이드로 이루어진 군으로부터 1 종 이상 선택되는 것이 바람직하다.In the above thinner composition, the alkylamide of a) is preferably at least one selected from the group consisting of N-methylacetamide, dimethylformamide, and dimethylacetamide.
즉, 상기 아마이드 계열을 혼합하여서, 초기 용해속도를 높여 TFT-LCD 제조 공정상에 발생되는 문제점을 보완하여, 이 후에 생성되는 PR의 뭉침 현상을 방지하며, 상기 아마이드 계열을 사용한 경우 발생될 수 있는 낮은 휘발도의 문제를 보상하기 위하여 상기 일반식 2와 같은 유기 용제를 혼합시킨다.That is, by mixing the amide series, it is possible to improve the initial dissolution rate to compensate the problems occurring in the TFT-LCD manufacturing process, to prevent the agglomeration of the PR produced after the amide series, To compensate for the problem of low volatility, an organic solvent such as that of Formula 2 is mixed.
또한, 상기 씬너 조성물에 있어서, b)의 유기 용제는 프로필렌 글리콜 모노메틸 에테르 아세테이트, β-메톡시 이소부티르산 메틸 에스테르, 및 메틸 3-메톡시 프로피오네이트로 이루어진 군으로부터 1 종 이상 선택되는 것이 바람직하다.In the thinner composition, the organic solvent of b) is preferably at least one selected from the group consisting of propylene glycol monomethyl ether acetate,? -Methoxyisobutyrate methyl ester, and methyl 3-methoxypropionate Do.
이하, 본 발명을 더욱 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명의 씬너 조성물은 바람직하게는 상기 일반식 1의 알킬 아마이드 1 내지 25 중량%와 상기 일반식 2의 유기 용제 75 내지 99 중랑%를 혼합한다.The thinner composition of the present invention preferably comprises 1 to 25% by weight of the alkyl amide of the general formula 1 and 75 to 99% by weight of the organic solvent of the general formula 2.
본 발명의 씬너 조성물은 가장 바람직하게는 상기 일반식 1의 알킬 아마이드 5 내지 20 중량%와 상기 일반식 2의 유기 용제 80 내지 95 중랑%를 혼합한다. 여기서, 알킬 아마이드의 함량이 5 중량% 이하이면 휘발도가 증가되나 용해력이 감소되고, 20 중량% 이상이면 용해력이 증가되나 휘발도가 낮아지는 문제점이 발생하며, 유기 용제의 함량이 80 중량% 이하이면 용해력이 증가되나 휘발도가 감소되고, 95 중량% 이상이면 휘발도가 증가되나 용해력이 저하되는 문제점이 발생한다.The thinner composition of the present invention most preferably comprises 5 to 20% by weight of the alkyl amide of the general formula 1 and 80 to 95% by weight of the organic solvent of the general formula 2. If the content of the alkyl amide is less than 5 wt%, the volatility increases but the solubility decreases. If the alkyl amide content is more than 20 wt%, the solubility increases but the volatility decreases. When the content of the organic solvent is less than 80 wt% The solubility is increased but the volatility is decreased. When the amount is more than 95% by weight, the volatility is increased but the solubility is lowered.
본 발명의 씬너 조성물은 상기 일반식 1의 알킬 아마이드와 일반식 2의 유기 용제 모두 반도체 등급의 극히 순수한 것이 선택되어 사용될 수 있다.The thinner composition of the present invention may be selected from extremely pure semiconductor grades of both the alkyl amide of the general formula (1) and the organic solvent of the general formula (2).
상기 씬너 조성물 중 알킬 아마이드는 낮은 휘발도의 특징을 감안하여 알킬기의 탄소수가 1 내지 2인 것이 사용 가능하며, 이러한 것으로는 N-메틸 아세트 아마이드, 디메틸 포름 아마이드, 디메틸 아세트 아마이드 등이 있다. 이중 디메틸 아세트 아마이드의 용해속도가 가장 빠르다.In view of the low volatility characteristics, the alkyl amide among the thinner compositions can be used in which the alkyl group has 1 to 2 carbon atoms, and examples thereof include N-methylacetamide, dimethylformamide and dimethylacetamide. Dissolution rate of dimethylacetamide is the fastest.
상기 조성물 중 또 한 성분인 상기 일반식 2의 유기 용제는 프로필렌 글리콜 모노메틸 에테르 아세테이트, β-메톡시 이소부티르산 메틸 에스테르, 및 메틸 3-메톡시 프로피오네이트를 포함한다. 이중 β-메톡시 이소부티르산 메틸 에스테르는 냄새가 자극적이어서 작업환경에 유해하다. 따라서, 그외 프로필렌 글리콜 모노메틸 에테르 아세테이트 및 메틸 3-메톡시 프로피오네이트 정도가 바람직하다.The organic solvent of the general formula 2 as another component of the composition includes propylene glycol monomethyl ether acetate,? -Methoxyisobutyric acid methyl ester, and methyl 3-methoxypropionate. Methoxy isobutyric acid methyl ester is harmful to the working environment because of the odor is irritating. Therefore, propylene glycol monomethyl ether acetate and methyl 3-methoxypropionate are preferable.
본 발명의 적용 방법은 상기 2가지 조성을 일정 성분비로 적절히 조합한 후In the application method of the present invention, the above two compositions are appropriately combined with a certain component ratio
감광성 수지를 도포하고 기판의 에지 부분에 분사하여 불필요한 PR을 제거한다.A photosensitive resin is applied and ejected onto the edge portion of the substrate to remove unnecessary PR.
이하의 실시예 및 비교예를 통하여 본 발명을 더욱 상세하게 설명한다. 단, 하기 실시예는 본 발명을 예시하기 위한 것으로서 본 발명이 하기 실시예에 의하여 한정되는 것은 아니다.The present invention will be described in more detail with reference to the following examples and comparative examples. However, the following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.
실험예 1Experimental Example 1
[단일 용매에 대한 EBR 실험][EBR test for single solvent]
제거 대상인 TFT-LCD용 PR에 대한 용해도를 알아보기 위해 여러가지 단일용매들에 대한 EBR을 진행하였다. 이때 생긴 PR 뭉침의 두께를 하기 표 1에 나타내었다. 여기서, TFT-LCD 포토레지스트로 주식회사 동진쎄미켐 제품(상품명: DTFR-3650A)을 사용하였으며, 하기 실시예 및 비교예에서는 하기 표 1의 단일 용매를 휘발도 기준으로 A, B, 및 C 군으로 나누었다.In order to investigate the solubility of the PR for the TFT-LCD to be removed, various single solvents were subjected to EBR. The thickness of the PR clumps formed at this time is shown in Table 1 below. In the following Examples and Comparative Examples, the single solvent of the following Table 1 was divided into A, B, and C groups on the basis of volatility, respectively, as a TFT-LCD photoresist (trade name: DTFR-3650A) .
하기 표 1에 나타난 바와 같이 휘발도가 높은 용매가 대체적으로 EBR후 PR뭉침 현상이 심한 것을 확인할 수 있었다.As shown in the following Table 1, it was confirmed that the solvent having a high volatility was largely PR clustering after EBR.
[표 1][Table 1]
A군 DMAc: 디메틸 아세트아마이드(dimethyl acetamide)Group A DMAc: Dimethyl acetamide < RTI ID = 0.0 >
DMF : 디메틸 포름아마이드(dimethyl formamide)DMF: dimethyl formamide < RTI ID = 0.0 >
B군 MMP: 메틸 3-메톡시 프로피오네이트(methyl 3-methoxy propionate)Group B MMP: methyl 3-methoxy propionate
MBM: β-메톡시 이소부티르산 메틸 에스터(β-methoxy isobutyric acid methyl ester)MBM:? -Methoxy isobutyric acid methyl ester
C군 PGMEA: 프로필렌 글리콜 모노메틸 에테르 아세테이트(propylene glycol monomethyl ether acetate)Group C PGMEA: Propylene glycol monomethyl ether acetate (propylene glycol monomethyl ether acetate)
PGME: 프로필렌 글리콜 모노메틸 에테르(propylene glycol monomethyl ether)PGME: propylene glycol monomethyl ether
MIBK: 메틸 이소부틸 케톤(methyl isobutyl ketone)MIBK: Methyl isobutyl ketone
nBA: n-부틸 아세테이트(n-butyl acetate)nBA: n-butyl acetate < RTI ID = 0.0 >
n-PAc: n-프로필 아세테이트(n-propyl acetate)n-PAc: n-propyl acetate
IPAc: 이소프로필 아세테이트(isopropyl acetate)IPAc: isopropyl acetate
상기 표 1에 나타내지는 않았지만 단독으로 사용한 경우 PR이 심하게 뭉침 현상을 나타내는 유기 용제류는 이들을 혼합했을 경우에도 동일하게 PR을 뭉치게 하였다.Although not shown in Table 1, the organic solvents exhibiting a severe aggregation of PR when used alone were aggregated in the same manner even when they were mixed.
그러나, 증발속도가 낮은 것이 우수한 제거 효과를 얻는 것은 아니다. 상기 씬너 조성물에 있어서 중요한 것은 순간적인 신속한 용해력과 함께 에지 부분의 PR을 제거한 후 바로 휘발되는 높은 휘발도의 성질을 갖추어야 한다.However, a low evaporation rate does not provide an excellent removal effect. What is important for the thinner composition is to have a property of high volatility which is instantly evaporated immediately after removing the PR of the edge portion together with a rapid dissolving power.
즉, DMAc의 경우 TFT-LCD용 PR을 뭉침 현상 없이 에지 비드(Edge bead)를 제거하지만, 이것 자체만으로는 휘발도가 낮아 씬너 조성물로서는 부적합하다. 따라서 휘발도를 높이기 위해 고휘발도 용제류와의 혼합이 필수적이다.That is, in the case of DMAc, the edge bead is removed without causing aggregation of the PR for the TFT-LCD, but it is in itself unsuitable as a thinner composition because of its low volatility. Therefore, mixing with high volatility solvents is essential to increase the volatility.
본 발명은, 상기 2가지 조성을 일정 성분비로 적절히 조합하여 사용할 경우 TFT-LCD공정에서도 무리가 없으며, 신속한 세정력과 함께 휘발도 측면에서도 문제가 없는 에지 비드 리무버(Edge bead remover)로서 우수한 성능을 발휘할 수 있는 씬너 조성물의 발견에 기초하고 있다.The present invention can provide excellent performance as an edge bead remover which has no problem in the TFT-LCD process when used properly in combination of the above-mentioned two compositions in a certain component ratio and has no problem in terms of volatility as well as quick cleaning power ≪ / RTI >
실시예 1 내지 6, 및 비교예 1 내지 7Examples 1 to 6 and Comparative Examples 1 to 7
씬너 조성물을 하기의 표 2와 같은 조성으로 하여 본 발명에 따른 실시예 1 내지 6 및 비교예 1 내지 7의 씬너 조성물의 성능을 평가하였다.The performance of the thinner compositions of Examples 1 to 6 and Comparative Examples 1 to 7 according to the present invention was evaluated with the composition of the thinner as shown in Table 2 below.
본 발명의 실시예 및 비교예에서 사용된 유리 기판은 가로 세로 크기가 680 mm × 880 mm인 유리 기판을 사용하였다. 이들 기판을 먼저 스트리퍼(stripper)나 테트라메틸 암모늄 하이드록사이드(Tetramethyl ammonium hydroxide: TMAH) 수용액으로 기판에 남아있는 유기 이물질을 제거한 다음 초순수로 세척한 후 건조시켰다. 이어서 기판의 상부면에 감광막을 1.6 ㎛로 피복한 후 EBR을 진행하였다.The glass substrates used in Examples and Comparative Examples of the present invention were glass substrates having a size of 680 mm x 880 mm. These substrates were firstly rinsed with ultrapure water and then dried using a stripper or an aqueous solution of tetramethyl ammonium hydroxide (TMAH) to remove organic impurities. Subsequently, the upper surface of the substrate was coated with a photoresist film of 1.6 mu m, followed by EBR.
실험에 사용된 PR은 상용적으로 사용할 수 있는 각종 TFT-LCD용 포토레지스트중 주식회사 동진쎄미켐 제품(상품명 DTFR-3650A)에 대하여 본 발명의 씬너 조성물과 종래의 씬너 조성물을 사용하여 EBR한 후의 PR뭉침의 두께 및 휘발정도를 측정하여 그 측정 결과를 하기 표 2에 나타내었다.The PR used in the experiment was PR synthesized after EBR using the thinner composition of the present invention and a conventional thinner composition with respect to Dongjin Semichem Co., Ltd. (trade name DTFR-3650A) among commercially available various TFT-LCD photoresists And the degree of volatilization was measured. The results of the measurement are shown in Table 2 below.
두께 측정장비로는 롱 스캔 프로파일(Long Scan Profiler, Tencor Instrument사 제품 모델 Tencor P-11)을 사용하였으며, 이는 단차를 이용하여 스타일러스(stylus)로 스캔하며 두께차이를 인식하는 장비이다. 또한, 휘발정도는 웨이퍼(wafer) 끝단에 잔류하는 씬너를 사진으로 나타내어 시각적인 것으로 측정을 대신하였다. 이에 사용된 장비는 라이카(Leica)사의 모델명 FTM-200이다.Long scan profiles (Tencor P-11, manufactured by Tencor Instrument) were used as the thickness measurement equipment, which was scanned with a stylus to recognize thickness difference. In addition, the degree of volatilization represents the thinner remaining on the wafer edge as a photograph, and is replaced with a visual measurement. The equipment used is Leica FTM-200.
하기 표 2의 평가 부분은 유첨 도면과 같이 PR 끝부분의 프로파일(profile) 상태와 휘발도에 기준하였다.The evaluation part in the following Table 2 is based on the profile state and volatility of the PR tip as shown in the drawing.
에지 부위의 PR 프로파일이 깨끗해야 하며, 웨이퍼 가장자리에 씬너가 남아있지 않아야 우수한 씬너이다.The PR profile at the edge must be clean and there should be no thinner on the edge of the wafer.
[표 2] 포토레지스트에 대한 씬너 조성물의 EBR 결과Table 2 EBR results of the thinner composition on photoresist
○: 휘발력 우수○: Excellent volatility
△: 휘발력 보통?: Volatility Usually
×: 휘발력 불량×: bad volatility
상기 표 2와 유첨 도면에서 보는 바와 같이, 도 1은 휘발력이 우수하고 테일(tail)이 형성되지 않고, PR과 베어 그라스(bare glass)와의 경계가 뚜렷한 포토레지스트 끝부분의 프로파일 상태를 나타내고, 도 2는 중간 정도의 휘발력을 갖으며, 테일이 형성되지 않은 포토레지스트 끝부분의 프로파일 상태를 나타내고, 도 3은 휘발력은 우수하나 테일이 형성된 포토레지스트 끝부분의 프로파일 상태를 나타내며, 도 4는 휘발력이 떨어지고 테일이 형성된 포토레지스트 끝부분의 프로파일 상태를 나타낸다.As shown in Table 2 and FIG. 1, FIG. 1 shows a profile state of a photoresist edge portion having excellent volatility and no sharp tail and having a clear boundary between PR and bare glass, FIG. 2 shows the profile state of the end portion of the photoresist having an intermediate volatilization force but not the tail. FIG. 3 shows the profile state of the end portion of the photoresist having a strong volatilization but tail, Shows the profile state of the photoresist edge portion where the volatilization force is lowered and the tail is formed.
따라서, 본 발명의 실시예에 따른 씬너 조성물이 비교예에 따른 씬너 조성물에 비하여 PR 끝부분의 프로파일이 깨끗하고 웨이퍼 가장자리에 씬너가 남아있지 않은 우수한 휘발정도를 갖는다는 것을 알 수 있다.Thus, it can be seen that the thinner composition according to the embodiment of the present invention has a superior degree of volatilization, as compared to the thinner composition according to the comparative example, in which the profile of the PR tip is clean and no thinner remains at the edge of the wafer.
본 발명에 의한 씬너 조성물은 유리 기판 위에 ITO(indium-tin oxide)막을 형성하고, 상기 ITO막 위에 포토레지스트를 회전 도포한 다음에, 이를 제거하기 위해 사용될 경우, 종래에 기판의 가장자리 에지 부분에 형성되던 포토레지스트의 뭉침 현상을 제거하는데 있어서 기존의 씬너 조성물들과는 차별화된 2성분계 씬너 조성물을 사용하여 PR의 뭉치는 현상을 깨끗이 제거함으로써 기판의 크기가 대형화됨으로써 발생되는 문제를 종래 공정에 대하여 변화를 주지 않고 극복하여 생산수율을 향상시킬 수 있는 효과가 있다.The thinner composition according to the present invention can be formed by forming an indium-tin oxide (ITO) film on a glass substrate, spin-coating the photoresist on the ITO film, In order to eliminate the agglomeration of the photoresist, a two-component thinner composition different from conventional thinner compositions is used to cleanly remove the bundle of PR, thereby changing the problem caused by the enlargement of the substrate to a conventional process And the production yield can be improved.
또한, 본 발명에 의한 씬너 조성물은 TFT-LCD의 EBR뿐만 아니라 반도체 소자류의 EBR에서도 충분하게 사용할 수 있다는 장점을 갖는다.In addition, the thinner composition according to the present invention has an advantage that it can be used not only in EBR of TFT-LCD but also in EBR of semiconductor devices.
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| JPH07271054A (en) * | 1994-04-01 | 1995-10-20 | Toray Ind Inc | Rinsing solution for photosensitive polyimide |
| JPH08104895A (en) * | 1994-10-05 | 1996-04-23 | Mitsubishi Chem Corp | Rinsing liquid and rinsing method |
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| JPH11133629A (en) * | 1997-10-30 | 1999-05-21 | Tokuyama Corp | Photoresist cleaning remover |
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| US4770713A (en) * | 1986-12-10 | 1988-09-13 | Advanced Chemical Technologies, Inc. | Stripping compositions containing an alkylamide and an alkanolamine and use thereof |
| JPH06184595A (en) * | 1992-12-18 | 1994-07-05 | Nitto Chem Ind Co Ltd | Detergent for resist removing step |
| JPH06212193A (en) * | 1992-12-21 | 1994-08-02 | Nitto Chem Ind Co Ltd | Detergent for removing resist stripper |
| JPH07271054A (en) * | 1994-04-01 | 1995-10-20 | Toray Ind Inc | Rinsing solution for photosensitive polyimide |
| JPH08104895A (en) * | 1994-10-05 | 1996-04-23 | Mitsubishi Chem Corp | Rinsing liquid and rinsing method |
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