JPH08104895A - Rinsing liquid and rinsing method - Google Patents

Rinsing liquid and rinsing method

Info

Publication number
JPH08104895A
JPH08104895A JP24136794A JP24136794A JPH08104895A JP H08104895 A JPH08104895 A JP H08104895A JP 24136794 A JP24136794 A JP 24136794A JP 24136794 A JP24136794 A JP 24136794A JP H08104895 A JPH08104895 A JP H08104895A
Authority
JP
Japan
Prior art keywords
radiation
sensitive composition
substrate
diacetone alcohol
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24136794A
Other languages
Japanese (ja)
Other versions
JP3902798B2 (en
Inventor
Mineo Nishi
峰雄 西
Masashi Teramoto
正史 寺本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to JP24136794A priority Critical patent/JP3902798B2/en
Publication of JPH08104895A publication Critical patent/JPH08104895A/en
Application granted granted Critical
Publication of JP3902798B2 publication Critical patent/JP3902798B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE: To provide a rinsing liquid containing diacetone alcohol, having high dissolving power to a radiation-sensitive composition and high compatibility with water, effective e.g. for the cleaning of a substrate or a radiation-sensitive composition and useful for photolithography, etc. CONSTITUTION: This rinsing liquid for washing and removing a radiation- sensitive composition attached to a substrate such as a semiconductor substrate or for photolithography using a radiation-sensitive composition, etc., is produced by using diacetone alcohol as an essential component in an amount of >=50wt.% (preferably >=70wt.%) based on the total liquid and compounding the diacetone alcohol with one or more kinds of organic solvents having high solubility to water such as propylene glycol monomethyl ether acetate, methoxypropanol, dipropylene glycol dimethyl ether, acetone, butyl acetate, ethyl lactate and γ-butyrolactone.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、一般に放射線に感応す
る感放射線性組成物を用いるフォトリソグラフィー工程
に於て使用されるリンス液及びリンス方法に関するもの
である。詳しくは感放射線性組成物を基板に塗布する工
程において用いるリンス液及びリンス方法に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates generally to a rinse solution and a rinse method used in a photolithography process using a radiation-sensitive composition sensitive to radiation. Specifically, it relates to a rinse liquid and a rinse method used in the step of applying the radiation-sensitive composition to the substrate.

【0002】[0002]

【従来の技術】集積回路等に代表される微細加工技術は
近年益々その加工精度を向上させており、ダイナミック
ランダムアクセスメモリー(DRAM)を例にとれば、
現在では、サブミクロンの加工技術が大量生産レベルの
技術として確立されている。このサブミクロンの加工に
はg線(436nm),i線(365nm)、KrFエ
キシマレーザー光(248nm)等の短波長の放射線を
用いたフォトリソグラフィー技術が利用されている。こ
れらに使用される感放射線性組成物も改良をかさね高性
能な感放射線性組成物が種々提案されている(特開昭5
9−45439号、特開昭62−136637号、特開
昭62−153950号、特開平4−136860号、
特開平4−136941号等)。又、従来は基板に該感
放射線性組成物を単層に塗布し、露光及び現像を行って
いたが、近年ではフォトリソグラフィー精度を向上させ
る目的で、下記の如き多層膜を用いて露光及び現像する
方法が導入されている。
2. Description of the Related Art In recent years, microfabrication technology typified by integrated circuits has been increasingly improved in machining accuracy. Taking dynamic random access memory (DRAM) as an example,
At present, submicron processing technology has been established as mass production level technology. Photolithography technology using short-wave radiation such as g-line (436 nm), i-line (365 nm), and KrF excimer laser light (248 nm) is used for this submicron processing. The radiation-sensitive compositions used in these have also been improved, and various high-performance radiation-sensitive compositions have been proposed (Japanese Patent Laid-Open No. Sho 5).
9-45439, JP-A-62-136637, JP-A-62-153950, JP-A-4-136860,
JP-A-4-136941). In the past, a single layer of the radiation-sensitive composition was coated on a substrate and then exposed and developed, but in recent years, for the purpose of improving photolithographic accuracy, exposure and development using a multilayer film as described below are performed. Has been introduced.

【0003】感放射線性組成物塗布膜の上面及び/又
は下面に反射防止膜を形成させたのち露光及び現像を行
う方法(特開昭62−62521号、特開平3−222
409号、特開平5−188598号等)。 感放射線性組成物塗布膜の上面に光退色性組成物塗布
膜を形成させたのち露光及び現像を行う方法(特開昭6
0−238829号、特開平6−175371号等)。 感放射線性組成物塗布膜の上面に、微細加工工程雰囲
気ガス中の微量成分の影響を緩和するための保護膜を形
成させたのち露光及び現像を行う方法(特開平6−11
0210号、特開平6−118630号等)。
A method of exposing and developing after forming an antireflection film on the upper surface and / or the lower surface of the radiation-sensitive composition coating film (JP-A-62-62521, JP-A-3-222).
409, JP-A-5-188598). A method in which a photobleaching composition coating film is formed on the upper surface of a radiation-sensitive composition coating film, and then exposure and development are performed (JP-A No. 6-63138).
0-238829, JP-A-6-175371, etc.). A method of exposing and developing after forming a protective film on the upper surface of the coating film of the radiation-sensitive composition for mitigating the influence of trace components in the atmosphere gas in the microfabrication process (JP-A-6-11).
0210, JP-A-6-118630, etc.).

【0004】一方、感放射線性組成物等はシリコンウェ
ハー等の基板にスピンコート法等によって塗布される
が、この際、基板裏面に感放射線性組成物等が回り込む
と、次工程に用いる露光機等を汚染するので、通常、感
放射線性組成物のスピンコート時にウェハー裏面等にリ
ンス液を噴射、洗浄しているのが通例である。このリン
ス液としては、酢酸ブチル、エチルセロソルブアセテー
ト等の感放射線性組成物に用いる溶媒が一般的に用いら
れている。
On the other hand, the radiation-sensitive composition or the like is applied to a substrate such as a silicon wafer by a spin coat method or the like. At this time, when the radiation-sensitive composition or the like wraps around the back surface of the substrate, an exposure device used in the next step. Therefore, it is customary to spray and rinse the back surface of the wafer with a rinsing liquid during spin coating of the radiation-sensitive composition. As the rinse liquid, a solvent such as butyl acetate or ethyl cellosolve acetate used in the radiation-sensitive composition is generally used.

【0005】かかるスピンコート法では、基板上に過剰
に滴下されるため未利用にて廃棄される感放射線性組成
物及びリンス液等は、スピンカップ内からドレン配管を
経由し廃液タンクに集められるのが一般的な装置の構造
である。即ち、スピンカップ内やドレン配管内等は、感
放射線性組成物、リンス液、更には上記〜に用いる
膜組成物等が混合された状態にさらされることとなる。
しかしながら、近年の感放射線性組成物の高性能化等に
伴い、感放射線性組成物に用いる感光剤の各種有機溶媒
に対する溶解性が低下してきていること、及び/又は上
記〜に用いる膜組成物は水性溶媒を用いている例が
多いこと、等の理由によって、従来のリンス液をもちい
た場合にはスピンカップ内、ドレン配管内等に感光剤等
が析出、付着し、長時間の運転ではこれらが堆積し、ド
レン配管等を閉塞させ、長時間の安定運転ができない等
の問題が発生していた。
In such a spin coating method, the radiation-sensitive composition and the rinse liquid which are unused and discarded because they are excessively dropped on the substrate are collected in the waste liquid tank from the spin cup through the drain pipe. Is a general device structure. That is, the inside of the spin cup, the inside of the drain pipe, and the like are exposed to a state in which the radiation-sensitive composition, the rinse liquid, and the film composition used in the above 1 to 3 are mixed.
However, the solubility of the photosensitizer used in the radiation-sensitive composition in various organic solvents has been reduced with the recent advance in the performance of the radiation-sensitive composition, and / or the film composition used in any one of the above. For many reasons, such as using an aqueous solvent, when using a conventional rinse solution, the photosensitizer and the like deposit and adhere in the spin cup, drain pipe, etc. These were accumulated and blocked drain pipes and the like, and there was a problem that stable operation could not be performed for a long time.

【0006】又、エチルセロソルブアセテートは感放射
線性組成物溶媒及びリンス液として広く使用されている
が、近年安全性に疑念が持たれ、エチルセロソルブアセ
テートに代わる、より安全性の高い溶媒が要求されてい
る。感放射線性組成物用の安全溶媒として乳酸エチル、
2−ヘプタノン等が提案されているが、例えば乳酸エチ
ルはエチルセロソルブアセテートに比較し、単価が約3
倍と高価であり、より安価で安全な溶媒が求められてい
る。
[0006] Ethyl cellosolve acetate is widely used as a solvent and rinse solution for radiation-sensitive compositions, but in recent years, safety has been doubted, and a more safe solvent replacing ethyl cellosolve acetate is required. ing. Ethyl lactate as a safe solvent for radiation-sensitive compositions,
Although 2-heptanone and the like have been proposed, for example, ethyl lactate has a unit price of about 3 as compared with ethyl cellosolve acetate.
There is a need for a solvent that is twice as expensive and cheaper and safer.

【0007】[0007]

【発明が解決しようとする課題】本発明は、感放射線性
組成物を基板に塗布する方法において感放射線性組成物
の基板裏面への回り込み等を防止するために使用するリ
ンス液を提供するものである。更に、本発明は、感放射
線性組成物を基板に塗布する装置において感放射線性組
成物が該装置内の配管等へ析出固着するのを防止するた
めに使用するリンス液を提供するものである。本発明
は、前記の背景に鑑みなされたものであり、ドレン配管
内等に感光剤等の析出、付着がなく、安価で安全な新規
なリンス液を提供するものである。
DISCLOSURE OF THE INVENTION The present invention provides a rinse liquid used for preventing the radiation-sensitive composition from wrapping around to the back surface of the substrate in the method of applying the radiation-sensitive composition to the substrate. Is. Furthermore, the present invention provides a rinse solution used in an apparatus for applying a radiation-sensitive composition to a substrate to prevent the radiation-sensitive composition from depositing and sticking to a pipe or the like in the apparatus. . The present invention has been made in view of the above background, and provides a novel inexpensive and safe rinse liquid without deposition or adhesion of a photosensitizer in a drain pipe or the like.

【0008】[0008]

【課題を解決するための手段】このような問題点を解決
するために本発明者等は種々検討を重ねた結果、リンス
液としてジアセトンアルコールを含有するリンス液を用
いれば目的を達成することができることを見出し本発明
を完成した。即ち、本発明の要旨は、ジアセトンアルコ
ールを含有することを特徴とする感放射線性組成物の洗
浄除去用のリンス液及び、該リンス液を用いる基板及び
/又は装置のリンス方法、に存する。
Means for Solving the Problems As a result of various studies conducted by the present inventors in order to solve such problems, the use of a rinse solution containing diacetone alcohol as the rinse solution achieves the object. The present invention has been completed by finding that the above can be achieved. That is, the gist of the present invention resides in a rinse liquid for cleaning and removing a radiation-sensitive composition characterized by containing diacetone alcohol, and a method of rinsing a substrate and / or an apparatus using the rinse liquid.

【0009】以下、本発明を更に詳細に説明する。本発
明のリンス液は、ジアセトンアルコールを含有すること
を必須としている。本発明のリンス液は、ジアセトンア
ルコールを含有するものであれば、その性能を損わない
範囲で他の有機溶媒を含んでいてもよい。かかる有機溶
媒としては、プロピレングリコールモノメチルエーテル
アセテート、メトキシプロパノール、ジプロピレングリ
コールジメチルエーテル、アセトン、酢酸ブチル、乳酸
エチル、γ−ブチロラクトン等が挙げられ、これらの2
種類以上の溶媒とジアセトンアルコールとの混合物でも
良い。
The present invention will be described in more detail below. The rinse liquid of the present invention essentially contains diacetone alcohol. The rinse liquid of the present invention may contain other organic solvent as long as it contains diacetone alcohol, as long as its performance is not impaired. Examples of such an organic solvent include propylene glycol monomethyl ether acetate, methoxypropanol, dipropylene glycol dimethyl ether, acetone, butyl acetate, ethyl lactate, γ-butyrolactone, and the like.
A mixture of more than one kind of solvent and diacetone alcohol may be used.

【0010】この場合にはジアセトンアルコールを全体
の50重量%以上、好ましくは70重量%以上使用する
のが良い。又、本発明のリンス液にジアセトンアルコー
ルと共に含有される溶媒としては水への溶解度の高い溶
媒が好ましく、メトキシプロパノール、アセトン、乳酸
エチル、γ−ブチロラクトン等が好ましい。本発明のリ
ンス液は特に好ましくはジアセトンアルコール単独のも
のである。
In this case, diacetone alcohol should be used in an amount of 50% by weight or more, preferably 70% by weight or more. Further, the solvent contained in the rinse liquid of the present invention together with diacetone alcohol is preferably a solvent having a high solubility in water, and methoxypropanol, acetone, ethyl lactate, γ-butyrolactone and the like are preferable. The rinse liquid of the present invention is particularly preferably diacetone alcohol alone.

【0011】本発明のリンス液は、基板に付着した感放
射線性組成物の洗浄除去用に、又は、感放射線性組成物
塗布装置に付着した感放射線性組成物の洗浄除去用に使
用される。即ち、本発明のリンス液は、従来のリンス液
と同様に、スピンコート時に半導体基板等の基板裏面、
基板エッジ部等に噴射し、或いは、スピンカップ内、ド
レン配管、感放射線性組成物配管等に通液し洗浄溶媒と
して使用される。
The rinse liquid of the present invention is used for cleaning and removing the radiation-sensitive composition attached to the substrate or for cleaning and removing the radiation-sensitive composition attached to the radiation-sensitive composition coating apparatus. . That is, the rinse liquid of the present invention, like the conventional rinse liquid, the substrate back surface of the semiconductor substrate during spin coating,
It is sprayed onto the edge portion of the substrate or the like, or is passed through a spin cup, a drain pipe, a radiation-sensitive composition pipe or the like to be used as a cleaning solvent.

【0012】本発明のリンス液が適用できる(洗浄除去
される)感放射線性組成物としては、従来公知の種々の
感放射線性組成物が適用できる。感放射線性組成物は、
生成する画像と露光部分との関係によりネガ型とポジ型
の二種の感放射線性組成物に分類することができるが、
本発明は基本的に双方の感放射線性組成物に共通に適用
できる。感放射線性組成物としては、例えば、(i)ポ
リ桂皮酸ビニル系、及びポリイソプレン環化ゴム系の光
架橋型の感放射線性組成物(有機合成化学協会誌、第4
2巻、第11号p.979等)、(ii) 1,2−キノン
ジアジド化合物とアルカリ可溶性樹脂を有機溶媒に溶解
してなるもの(有機合成化学協会誌、第42巻、第11
号、p.979、特開昭62−136637号、特開昭
62−153950号等)及び、(iii)光照射により発
生する酸又は塩基の作用により重合又は解重合すること
により感放射線性の性能を発現する、所謂化学増幅型感
放射線性組成物(特開昭59−45439号、特開平4
−136860号、特開平4−136941号等)等が
挙げられる。
As the radiation-sensitive composition to which the rinse liquid of the present invention can be applied (washed and removed), various conventionally known radiation-sensitive compositions can be applied. The radiation-sensitive composition is
Depending on the relationship between the image generated and the exposed portion, it can be classified into two types of radiation-sensitive compositions of negative type and positive type.
The present invention is basically applicable to both radiation-sensitive compositions in common. As the radiation-sensitive composition, for example, (i) a vinyl cinnamate-based and polyisoprene cyclized rubber-based photocrosslinking radiation-sensitive composition (Journal of Synthetic Organic Chemistry, No. 4)
Volume 2, Issue 11 p. 979, etc.), (ii) 1,2-quinonediazide compound and an alkali-soluble resin dissolved in an organic solvent (Organic Synthetic Chemistry, Vol. 42, No. 11).
No., p. 979, JP-A-62-136637, JP-A-62-153950, etc.) and (iii) radiation-sensitive performance is exhibited by polymerization or depolymerization by the action of an acid or a base generated by light irradiation. A so-called chemically amplified radiation-sensitive composition (JP-A-59-45439, JP-A-4).
-136860, JP-A-4-136941, etc.) and the like.

【0013】(i)の感放射線性組成物に用いる樹脂と
してはポリビニルアルコールと桂皮酸クロリドより製造
されるポリ桂皮酸ビニル系樹脂、1,4−シスポリイソ
プレンを主成分とする環化ゴム系樹脂が挙げられる。
(i)の感放射線性組成物は、必要に応じて4,4’−
ジアジドカルコン、2,6−ジ−(4’−アジドベンジ
リデン)シクロヘキサノン等の光架橋剤を含有すること
も可能である。
The resin used in the radiation-sensitive composition (i) is a polyvinyl cinnamate resin produced from polyvinyl alcohol and cinnamic acid chloride, and a cyclized rubber resin containing 1,4-cis polyisoprene as a main component. Resins may be mentioned.
The radiation-sensitive composition (i) contains 4,4′-, if necessary.
It is also possible to contain a photocrosslinking agent such as diazidochalcone or 2,6-di- (4′-azidobenzylidene) cyclohexanone.

【0014】(ii)の感放射線性組成物における1,2
−キノンジアジド化合物としては、2,3,4−トリヒ
ドロキシベンゾフェノン、2,3,4,4’−テトラヒ
ドロキシベンゾフェノン等のポリヒドロキシベンゾフェ
ノン類、没食子酸エチル等のポリヒドロキシ安息香酸エ
ステル類、フェノール類とカルボニル化合物類より製造
されるビスフェノールAのようなポリフェノール類、又
はノボラック樹脂等の、フェノール性の水酸基を有する
化合物の1,2−ベンゾキノンジアジド−4−スルホン
酸エステル誘導体、1,2−ナフトキノンジアジド−4
−スルホン酸エステル誘導体、又は1,2−ナフトキノ
ンジアジド−5−スルホン酸エステル誘導体等が挙げら
れる。又、(ii)の感放射線性組成物に含まれるアルカ
リ可溶性樹脂としては、フェノール誘導体とアルデヒド
誘導体を重縮合させたノボラック樹脂類、又は、アクリ
ル酸誘導体、桂皮酸誘導体、スチレン誘導体、マレイン
酸誘導体等をモノマーとしこれらを重合させたポリマー
類が挙げられる。(iii)の感放射線性組成物としては、
例えばポリ(p−tert−ブトキシカルボニルオキ
シ)スチレン等の酸に対して不安定な基を有する樹脂
と、トリフェニルスルフォニウム・ヘキサフルオロアー
セナート等の光照射により酸を発生する化合物の組合わ
せにより光照射部が現像液に可溶化又は不溶化する感放
射線性組成物が挙げられる。
1, 2 in the radiation-sensitive composition of (ii)
Examples of the quinonediazide compound include polyhydroxybenzophenones such as 2,3,4-trihydroxybenzophenone and 2,3,4,4′-tetrahydroxybenzophenone, polyhydroxybenzoates such as ethyl gallate, and phenols. Polyphenols such as bisphenol A produced from carbonyl compounds, or 1,2-benzoquinonediazide-4-sulfonic acid ester derivatives of compounds having a phenolic hydroxyl group such as novolac resin, 1,2-naphthoquinonediazide- Four
-Sulfonic acid ester derivatives, 1,2-naphthoquinonediazide-5-sulfonic acid ester derivatives and the like can be mentioned. The alkali-soluble resin contained in the radiation-sensitive composition (ii) is a novolac resin obtained by polycondensing a phenol derivative and an aldehyde derivative, or an acrylic acid derivative, a cinnamic acid derivative, a styrene derivative, a maleic acid derivative. Polymers obtained by polymerizing these as monomers are mentioned. The radiation-sensitive composition of (iii),
For example, a combination of a resin having an acid labile group such as poly (p-tert-butoxycarbonyloxy) styrene and a compound such as triphenylsulfonium hexafluoroarsenate which generates an acid upon irradiation with light is used. A radiation-sensitive composition in which a light irradiation part is solubilized or insolubilized in a developing solution can be used.

【0015】又、(iii)の感放射線性組成物の別の例と
しては、フェノール誘導体とアルデヒド誘導体を重縮合
させたノボラック樹脂類とアルコキシメチル化メラミ
ン、アルコキシメチル化尿素等の架橋剤とハロゲン化メ
チルトリアジン類等の光照射により酸を発生する化合物
の組み合わせにより光照射部が現像液に不溶化する感放
射線性組成物が挙げられる。
Another example of the radiation-sensitive composition (iii) is a novolak resin obtained by polycondensing a phenol derivative and an aldehyde derivative, a cross-linking agent such as alkoxymethylated melamine and alkoxymethylated urea, and a halogen. A radiation-sensitive composition in which a light-irradiated part is insoluble in a developing solution due to a combination of compounds such as methylated triazines which generate an acid upon light irradiation.

【0016】(i)〜(iii)の感放射線性組成物に用い
る有機溶媒としては例えば、トルエン、キシレン等の芳
香族炭化水素類、酢酸エチル、酢酸ブチル等の酢酸エス
テル類、エチルセロソルブ、ジエチレングリコールジメ
チルエーテル等のポリエチレングリコール類のモノ又は
ジアルキルエーテル類、プロピレングリコールモノメチ
ルエーテル、ジプロピレングリコールジメチルエーテル
等のポリプロピレングリコール類のモノ又はジアルキル
エーテル類、エチルセロソルブアセテート、プロピレン
グリコールメチルエーテルアセテート等のアルキルセロ
ソルブアセテート類、炭酸エチレン、γ−ブチロラクト
ン等のエステル類、メチルエチルケトン、2−ヘプタノ
ン、シクロペンタノン等のケトン類、乳酸エチル、3−
メトキシプロピオン酸メチル、ピルビン酸エチル等のヒ
ドロキシ又はアルコキシ又はオキシアルキルカルボン酸
アルキル類等が挙げられる。これらの溶媒は樹脂、感光
剤等の溶解性、感放射線性組成物の安定性等を考慮し適
宜選択される。
Examples of the organic solvent used in the radiation-sensitive composition of (i) to (iii) include aromatic hydrocarbons such as toluene and xylene, acetic acid esters such as ethyl acetate and butyl acetate, ethyl cellosolve and diethylene glycol. Mono- or di-alkyl ethers of polyethylene glycols such as dimethyl ether, propylene glycol monomethyl ether, mono- or di-alkyl ethers of polypropylene glycols such as dipropylene glycol dimethyl ether, ethyl cellosolve acetate, alkyl cellosolve acetates such as propylene glycol methyl ether acetate, Esters such as ethylene carbonate and γ-butyrolactone, ketones such as methyl ethyl ketone, 2-heptanone and cyclopentanone, ethyl lactate, 3-
Examples thereof include hydroxy or alkoxy such as methyl methoxypropionate and ethyl pyruvate, or alkyls such as oxyalkylcarboxylic acid. These solvents are appropriately selected in consideration of the solubility of the resin and the photosensitizer, the stability of the radiation sensitive composition, and the like.

【0017】又、これらの感放射線性組成物は必要に応
じ、塗布性改良のための界面活性剤、感度向上のための
増感剤等を含有することもできる。尚、本発明のリンス
液は感放射線性組成物のみならず、多層膜を形成する感
放射線性組成物以外の組成物にも適用される。かかる他
の多層に塗布される組成物としては、下記のものが挙げ
られる。
If desired, these radiation-sensitive compositions may also contain a surfactant for improving coating properties, a sensitizer for improving sensitivity, and the like. The rinse liquid of the present invention is applied not only to the radiation-sensitive composition but also to compositions other than the radiation-sensitive composition forming the multilayer film. Examples of the composition applied to the other multilayers include the following.

【0018】フッ素系化合物等の低屈折率化合物を用
いた反射防止塗布組成物(特開昭62−62521号、
特開平3−222409号、特開平5−188598号
等) 光退色性化合物を用いたコントラスト増強性塗布組成
物(特開昭60−238829号、特開平6−1753
71号等) 水溶性ポリマーを用いた保護塗布組成物(特開平6−
110210号、特開平6−118630号等)
An antireflection coating composition using a low refractive index compound such as a fluorine-based compound (JP-A-62-62521,
JP-A-3-222409, JP-A-5-188598, etc.) Contrast enhancing coating composition using a photobleaching compound (JP-A-60-238829, JP-A-6-1753)
No. 71, etc.) Protective coating composition using a water-soluble polymer (JP-A-6-
110210, JP-A-6-118630, etc.)

【0019】本発明のリンス液は感放射線性組成物或は
反射防止膜、光退色性組成物膜、保護膜等の形成する塗
布組成物に対する溶解能力が高い溶媒であり、且つ、水
との相互溶解性が良いため、感放射線性組成物以外の上
記の如き塗布組成物の溶媒が水性溶媒の場合でも、感放
射線性組成物及び上記の如き塗布膜を溶解した場合に2
層分離することが少なく、又、固形成分が析出すること
も少なく、このため配管閉塞等の問題を惹起せず、安定
した塗布機の運転ができる。
The rinsing solution of the present invention is a solvent having a high dissolving ability for a radiation-sensitive composition or a coating composition for forming an antireflection film, a photobleaching composition film, a protective film, etc. Since the mutual solubility is good, even when the solvent of the above-mentioned coating composition other than the radiation-sensitive composition is an aqueous solvent, when the radiation-sensitive composition and the above-mentioned coating film are dissolved, 2
The layers are rarely separated, and the solid components are hardly deposited, so that problems such as pipe clogging are not caused and stable operation of the coating machine can be performed.

【0020】[0020]

【実施例】次に具体例を挙げて本発明を更に詳しく説明
するが、本発明はその要旨を越えないかぎりは実施例に
よりなんら制限を受けるものではない。尚、本例の感放
射線性組成物を取り扱う場合は特に説明がない場合は、
すべて500nm以下の光を遮光した蛍光灯を用いた
(所謂イェロールーム)クラス100のクリーンルーム
内にて行った。
EXAMPLES The present invention will be described in more detail with reference to specific examples, but the present invention is not limited to the examples unless it exceeds the gist of the invention. When handling the radiation-sensitive composition of this example, unless otherwise specified,
All were performed in a class 100 clean room using a fluorescent lamp that shielded light of 500 nm or less (so-called yellow room).

【0021】実施例1及び比較例1 表−1に示す各種溶媒及び各種感放射線性組成物等を
4:1(容量)にて混合し不溶解性成分の発生の有無を
確認した。結果を表−1に示す。混合後24時間以内に
不溶解性成分の発生があった場合を×、不溶解性成分の
発生がなかった場合を○とした。△は双方が完全に均一
にならず、液−液分離したものを表す。
Example 1 and Comparative Example 1 Various solvents and various radiation-sensitive compositions shown in Table 1 were mixed in a volume ratio of 4: 1 (volume), and the presence or absence of insoluble components was confirmed. The results are shown in Table 1. The case where the insoluble component was generated within 24 hours after mixing was evaluated as x, and the case where the insoluble component was not generated was evaluated as o. Δ indicates that both are not completely uniform and liquid-liquid separation is performed.

【0022】ジアセトンアルコールは、いずれの感放射
線性組成物及び反射防止膜用組成物に対しても、良好な
溶解性を示した。2−ヘプタノンは、感放射線性組成物
(有機溶媒系)に対して良好な溶解性を示したが、反射
防止膜用組成物(水溶媒系)に対する溶解性が劣るもの
であった。
Diacetone alcohol exhibited good solubility in any of the radiation-sensitive composition and the antireflection film composition. 2-heptanone showed good solubility in the radiation-sensitive composition (organic solvent system), but poor solubility in the antireflective coating composition (water solvent system).

【0023】実施例2及び比較例2 大日本スクリーン社製スピンコーターDSW636を用
い、感放射線性組成物として三菱化学社製MCPRi5
000を、バックリンス液としてジアセトンアルコー
ル、又は、酢酸ブチルを用い、シリコンウェハーに感放
射線性組成物を塗布した。処理は、ウェハー1枚当た
り、感放射線性組成物を3ml、バックリンス液を20
ml用い、1時間当たり、約50枚の処理スピードにて
行なった。ジアセトンアルコールを使用した場合は1週
間以上問題なく運転できたが、酢酸ブチルを使用した場
合は3日間にてドレン配管が閉塞し、運転ができなくな
った。
Example 2 and Comparative Example 2 A spin coater DSW636 manufactured by Dainippon Screen Co., Ltd. was used as a radiation-sensitive composition, and MCPRi5 manufactured by Mitsubishi Chemical Corporation.
000 was used as a back rinse solution using diacetone alcohol or butyl acetate to apply the radiation-sensitive composition to a silicon wafer. The treatment was performed with 3 ml of the radiation-sensitive composition and 20 ml of the back rinse liquid per wafer.
It was carried out at a processing speed of about 50 sheets per hour by using ml. When diacetone alcohol was used, the operation could be performed for one week or more without any problem, but when butyl acetate was used, the drain pipe was clogged in 3 days and the operation could not be performed.

【0024】[0024]

【表1】 [Table 1]

【0025】*1 キノンジアジド−ノボラック樹脂系
g線用ポジ型感放射線性組成物 *2 キノンジアジド−ノボラック樹脂系 i線用ポジ
型感放射線性組成物 *3 ポリビニールフェノールのt−ブチルオキシカル
ボニル化物20g、ビスフェノールAのt−ブチルオキ
シカルボニル化物10g、トリフェニルスルホニウムト
リフレート1.5g、ジエチレングリコールジメチルエ
ーテル65gよりなるエキシマレーザー用ポジ型感放射
線性組成物
* 1 Quinonediazide-novolak resin type positive radiation sensitive composition for g-line * 2 Quinonediazide-novolak resin type positive radiation-sensitive composition for i-ray * 3 Polyvinylphenol t-butyloxycarbonyl compound 20 g Positive radiation-sensitive composition for excimer laser, comprising 10 g of t-butyloxycarbonyl compound of bisphenol A, 1.5 g of triphenylsulfonium triflate, and 65 g of diethylene glycol dimethyl ether.

【0026】*4 クレゾールノボラック樹脂34g、
ヘキサメトキシメチルメラミン樹脂12g、2−(4’
−メトキシスチリル)−4,6−ビス(トリクロロメチ
ル)−s−トリアジン0.2g、プロピレングリコール
メチルエーテルアセテート50gよりなるi線用ネガ型
感放射線性組成物 *5 フッ素系化合物含有反射防止膜用組成物(水溶
媒)
* 4 34 g of cresol novolac resin,
Hexamethoxymethylmelamine resin 12g, 2- (4 '
-Methoxystyryl) -4,6-bis (trichloromethyl) -s-triazine 0.2 g and propylene glycol methyl ether acetate 50 g for i-line negative radiation-sensitive composition * 5 For fluorine compound-containing antireflection film Composition (water solvent)

【0027】*6 AZアクアタール:MCPRi66
00=1:1の混合物に対し、リンス液2倍容量混合 *7 ジアセトンアルコール *8 酢酸ブチル *9 キシレン *10 2−ヘプタノン
* 6 AZ Aquatar: MCPRi66
Mix 2 times the volume of the rinse solution with the mixture of 00 = 1: 1 * 7 Diacetone alcohol * 8 Butyl acetate * 9 Xylene * 10 2-Heptanone

【0028】[0028]

【発明の効果】本発明のリンス液は、感放射線性組成物
に対する溶解能力が高く、かつ水との相互溶解性が良
く、スピンコーター等にて配管閉塞を起こさず安定運転
ができ、産業上利するところが大である。
Industrial Applicability The rinsing solution of the present invention has a high ability to dissolve a radiation-sensitive composition and a good mutual solubility with water, and can be stably operated without causing pipe clogging with a spin coater or the like, which is industrially applicable. It has a great advantage.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 ジアセトンアルコールを含有することを
特徴とする感放射線性組成物の洗浄除去用のリンス液。
1. A rinse liquid for cleaning and removing a radiation-sensitive composition, which comprises diacetone alcohol.
【請求項2】 基板に付着した感放射線性組成物の洗浄
除去用に使用する請求項1に記載のリンス液。
2. The rinse liquid according to claim 1, which is used for cleaning and removing the radiation-sensitive composition attached to the substrate.
【請求項3】 感放射線性組成物塗布装置に付着した感
放射線性組成物の洗浄除去用に使用する請求項1に記載
のリンス液。
3. The rinse liquid according to claim 1, which is used for cleaning and removing the radiation-sensitive composition attached to the radiation-sensitive composition coating device.
【請求項4】 感放射線性組成物が付着した基板を請求
項1に記載のリンス液で処理することを特徴とする基板
のリンス方法。
4. A method of rinsing a substrate, which comprises treating the substrate having the radiation-sensitive composition adhered thereto with the rinse liquid according to claim 1.
【請求項5】 感放射線性組成物が付着した感放射線性
組成物塗布装置を請求項1に記載のリンス液で処理する
ことを特徴とする塗布装置のリンス方法。
5. A rinsing method for a coating apparatus, which comprises treating the radiation-sensitive composition coating apparatus to which the radiation-sensitive composition is adhered with the rinsing liquid according to claim 1.
JP24136794A 1994-10-05 1994-10-05 Rinse solution and rinse method Expired - Fee Related JP3902798B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24136794A JP3902798B2 (en) 1994-10-05 1994-10-05 Rinse solution and rinse method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24136794A JP3902798B2 (en) 1994-10-05 1994-10-05 Rinse solution and rinse method

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Family

ID=17073242

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Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100363272B1 (en) * 2000-07-13 2002-12-05 주식회사 동진쎄미켐 Thinner composition for removing tft-lcd photoresist
US6589719B1 (en) 2001-12-14 2003-07-08 Samsung Electronics Co., Ltd. Photoresist stripper compositions
US6682876B2 (en) 2001-12-14 2004-01-27 Samsung Electronics Co., Ltd. Thinner composition and method of stripping a photoresist using the same
US6815151B2 (en) 1997-09-05 2004-11-09 Tokyo Ohika Kogyo Co., Ltd. Rinsing solution for lithography and method for processing substrate with the use of the same
WO2004112115A1 (en) * 2003-06-10 2004-12-23 Daikin Industries, Ltd. Remover liquid and removing method for antireflective film and buried material containing silicon

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815151B2 (en) 1997-09-05 2004-11-09 Tokyo Ohika Kogyo Co., Ltd. Rinsing solution for lithography and method for processing substrate with the use of the same
KR100363272B1 (en) * 2000-07-13 2002-12-05 주식회사 동진쎄미켐 Thinner composition for removing tft-lcd photoresist
US6589719B1 (en) 2001-12-14 2003-07-08 Samsung Electronics Co., Ltd. Photoresist stripper compositions
US6682876B2 (en) 2001-12-14 2004-01-27 Samsung Electronics Co., Ltd. Thinner composition and method of stripping a photoresist using the same
WO2004112115A1 (en) * 2003-06-10 2004-12-23 Daikin Industries, Ltd. Remover liquid and removing method for antireflective film and buried material containing silicon

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